CN100405575C - Method for forming contact holes on display device, and base plate of display device - Google Patents
Method for forming contact holes on display device, and base plate of display device Download PDFInfo
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- CN100405575C CN100405575C CNB200610093846XA CN200610093846A CN100405575C CN 100405575 C CN100405575 C CN 100405575C CN B200610093846X A CNB200610093846X A CN B200610093846XA CN 200610093846 A CN200610093846 A CN 200610093846A CN 100405575 C CN100405575 C CN 100405575C
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- contact hole
- etching
- insulating barrier
- passivation layer
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Abstract
The present invention provides a method for forming contact holes on a display device, and a base plate of the display device. The method comprises the steps that a first metal layer is formed on the base plate, and an insulating layer is formed to cover on the first metal layer and the base plate; a second metal layer is formed on the insulating layer, and a passivation layer is formed to cover on the insulating layer and the second metal layer. Then, patternized photoresist layer is formed above the passivation layer, and two etching steps are executed with the mask of the patternized photoresist layer and utilizing gases with different etching ratios to form the structure of the contact holes. At least one side wall of the contact hole is provided with an upper and a lower different angles of slope; thereby, an electrode layer formed in following procedure, the first metal layer on which the first contact holes are exposed, and the second metal layer on which the second contact holes are exposed have favorable step coverage property.
Description
Technical field
The present invention relates to a kind of display unit, more particularly relate to a kind ofly in forming the technology of display unit, utilize etching gas,, form contact hole with angle of inclination in twice etched mode with different etching ratios.
Background technology
In general, when semiconductor device was integrated, semiconductor device was optimized in its area, simultaneously, had layering wiring members and insulating barrier.In order to minimize the interference of the signal that transmits via wiring members, insulating barrier forms with dielectric materials.Contact hole is formed at the insulating barrier place, and the distribution of same signal is electrically connected mutually via several contact holes.In the technology based on the formation of etching contact hole, lateral erosion betides in the contact area easily, has also reduced the step coverage rate of contact hole structure simultaneously.Moreover, place the wiring members on the insulating barrier also may be not good follow-up, and cause its superincumbent profile distortion, or be cut off at the contact area place because of the step coverage rate of contact hole.
Shown in Figure 1A, in the manufacture method and configuration process thereof of display unit, will expose in order to the signal pad (pad) that receives from outside desired signal.For obtain having the angle of inclination contact hole (via hole or contact hole) of (taper angle), its step is for forming metal level 102, insulating barrier 104 and passivation layer 106 successively on substrate 100, patterning photoresist layer 110 is then arranged on passivation layer 106, in passivation layer 106 and insulating barrier 104, form at least one contact hole 120 then, shown in Figure 1B.The formation technology of general contact hole 120 is to utilize for example SF of fluoro-gas
6And oxygen (O
2) etching gas (or etching plasma), wherein the effect of oxygen is to work as SF
6When gas etch passivation layer 106 and insulating barrier 104, in order to remove patterning photoresist layer 110.In etching step, to carry out and handle (retreating) patterning photoresist layer 110 step again, the contact hole 120 that is positioned at passivation layer 106 and insulating barrier 104 can be etched, forms to have the contact hole structure at angle of inclination.Yet, use general fluoro-gas: the etching gas that oxygen is formed, with etching step etch passivation layer 106 and insulating barrier 104 formed contact holes 120 successively, owing to be positioned at the metal level 102 of insulating barrier 104 belows, copper layer for example, can and the oxygen plasma precursor reactant produce cupric oxide, make follow-uply to place electrode layer (not illustrating) contact on the contact hole 120 not good.
Summary of the invention
The objective of the invention is to, form in the process of display unit, utilize the etching gas of different etching ratios, form contact hole, make that the sidewall correspondence of contact hole is two-layer up and down and have a differing tilt angles with twice etching step.
Another object of the present invention is to, form in the process of display unit, use the etching gas of special etch ratio, and remove passivation layer and insulating barrier to form contact hole with etching step, and make the passivation layer of contiguous contact hole approach 90 and spend that making by this has good spreadability between the electrode layer of subsequent deposition and the contact hole with the angle of inclination of insulating barrier.
According to above-mentioned purpose, the invention provides a kind of formation method of display unit, comprise substrate is provided; Form the first metal layer on this substrate; Forming insulating barrier is covered on the first metal layer and the substrate; Form second metal level on insulating barrier; And the formation passivation layer is covered on the insulating barrier and second metal level.Then, form patterning photoresist layer above passivation layer, then with patterning photoresist layer as mask, carry out etching step for the first time, utilize SF
6/ O
2As etching gas, above the first metal layer successively the etch passivation layer and partly insulating barrier to form first contact hole; Simultaneously, above second metal level, remove passivation layer partly to form second contact hole.Next, carrying out etching step for the second time, is to utilize SF equally
6/ O
2As etching gas, but with respect to employed etching in the first time etching step than higher, therefore carrying out the second time during etching step, remove and be positioned at the residual passivation layer of the first contact hole upper surface, to expose the first metal layer, and remove and be positioned at the residual passivation layer of the second contact hole upper surface, to expose second metal level, therefore, by the formed contact hole of etching gas of twice different etching ratio, can obtain that sidewall in the contact hole is two-layer up and down to have different angles of inclination respectively.At last, remove patterning photoresist layer, and electrode layer is formed in passivation layer top, first contact hole and second contact hole, and because first contact hole is different with the bilevel angle of inclination of second contact hole, so electrode layer and the first metal layer that exposes first contact hole, and expose second metal level of second contact hole, have the excellent step spreadability.
Description of drawings
Figure 1A is according in the prior art, utilizes the etching gas of low etching ratio to carry out etching step, forms the schematic diagram of the contact hole with angle of inclination (taper angle);
Figure 1B is according in the prior art, carries out etching step one time with the etching gas that hangs down the etching ratio, and causes the schematic diagram of metallic copper over etching;
Fig. 2 A is disclosed technology according to the present invention, forms the first metal layer on substrate, and insulating barrier is covered in the step schematic diagram on the first metal layer and the substrate;
Fig. 2 B is disclosed technology according to the present invention, in the structure shown in Fig. 2 A, forms the step schematic diagram of second metal level on insulating barrier;
Fig. 2 C is disclosed technology according to the present invention, in the structure shown in Fig. 2 B, covers passivation layer in insulating barrier and second metal level top and form and have the step schematic diagram of patterning photoresist layer on passivation layer;
Fig. 2 D is disclosed technology according to the present invention, in the structure shown in Fig. 2 C, carries out etching step formation first contact hole above the first metal layer for the first time, and the step schematic diagram that forms second contact hole in second metal level top;
Fig. 2 E is disclosed technology according to the present invention, in the structure shown in Fig. 2 D, carry out etching step for the second time, remove the partly side of passivation layer, and expose the upper surface of the first metal layer and second metal level, to form first contact hole and second contact hole;
Fig. 2 F is disclosed technology according to the present invention, in the structure shown in Fig. 2 E, to divest the mode of photoresist (stripping photoresist), to remove the patterning photoresist layer that is positioned at the passivation layer top;
Fig. 2 G is disclosed technology according to the present invention, in the structure shown in Fig. 2 E, to divest the mode of photoresist (stripping photoresist), to remove the patterning photoresist layer that is positioned at the passivation layer top, make passivation layer have the schematic diagram of differing tilt angles up and down;
Fig. 3 A is disclosed another preferred embodiment according to the present invention, forms the first metal layer on substrate, and insulating barrier is covered in the step schematic diagram on the first metal layer and the substrate;
Fig. 3 B is disclosed another preferred embodiment according to the present invention, in the structure shown in Fig. 3 A, forms the step schematic diagram of second metal level on insulating barrier;
Fig. 3 C is disclosed another preferred embodiment according to the present invention, in the structure shown in Fig. 3 B, cover passivation layer in insulating barrier and second metal level top, and formation has the step schematic diagram of patterning photoresist layer on passivation layer;
Fig. 3 D is disclosed another preferred embodiment according to the present invention, in structure shown in Fig. 3 C, carry out etching step, and with patterning photoresist layer as mask, remove passivation layer and insulating barrier successively, forming first contact hole and second contact hole, and expose the step schematic diagram of the first metal layer and second metal level respectively; And
Fig. 3 E is disclosed another preferred embodiment according to the present invention, removes patterning photoresist layer, and covers electrode layer is in passivation layer top, first contact hole and second contact hole.The simple symbol explanation
10 substrates
12A the first metal layer 12B second metal level
14 insulating barriers, 16 passivation layers
18 patterning photoresist layer 18A halftoning (half-tone) photoresists
The 20A first contact hole 20B second contact hole
22 electrode layers
100 substrates, 102 metals
104 insulating barriers, 106 passivation layers
110 patterning photoresist layers, 120 contact hole
Embodiment
Some embodiments of the present invention can be described in detail as follows.Yet except describing in detail, the present invention can also be widely implements at other embodiment, and scope of the present invention do not limited, its with after claim be as the criterion.
Fig. 2 A to Fig. 2 F is each step schematic diagram of disclosed display unit formation method and structure thereof according to the present invention.
At first, please refer to Fig. 2 A, the first metal layer 12A is formed on the substrate 10, this substrate 10 can be transparency carrier (transparent substrate).Then, insulating barrier 14 is covered in the first metal layer 12A and substrate 10 tops.Then,, form the second metal level 12B and be positioned at insulating barrier 14 tops, and passivation layer (passivation layer) 16 is covered in insulating barrier 14 and second metal level 12B top with reference to Fig. 2 B.Wherein, the first metal layer 12A and the second metal level 12B are single-layer metal, and its material can be copper (Cu) or copper alloy (Cu alloy); Or double-level-metal, its upper strata metal is copper or copper alloy, lower metal then can be molybdenum (Mo), titanium (Ti), tantalum (Ta), nickel (Ni) or copper, or the metal nitride of above-mentioned these metals, metal oxide or alloy etc.
Shown in Fig. 2 C, patterning photoresist layer 18 is formed on passivation layer 16 tops, wherein, patterning photoresist layer 18 comprises halftoning (half-tone) photoresist 18A.
Then, carry out etching step for the first time, as mask (mask), utilize the etching ratio to be about 1: 2 to 1: 10 fluoro-gas: oxygen is as etching gas, and in addition, fluoro-gas is except SF with patterning photoresist layer 18
6Also comprise CF outward
4Or CHF
3, be to utilize SF in the present embodiment
6/ O
2As etching gas (or etching plasma).Then, above the first metal layer 12A, etch passivation layer 16 and insulating barrier 14 partly successively, to form the first contact hole 20A, the thickness that wherein is not removed and residues in the insulating barrier 14 in the first contact hole 20A bottom is about 50 dust to 500 dusts; Simultaneously, above the second metal level 12B, etching removes passivation layer 16 partly, and wherein, the thickness that is not removed and residues in the passivation layer 16 in the second contact hole 20B bottom is about 50 dust to 500 dusts, shown in Fig. 2 D.
Then with reference to figure 2E and Fig. 2 F, at first with reference to figure 2E, equally with patterning photoresist layer 18 as mask, and utilize SF
6/ O
2As etching gas, but with respect to the etching step first time, employed SF
6/ O
2Gas ratio is higher, and its ratio is about 2: 1 to 10: 1, or does not contain the pure SF of any impurity
6Gas that is to say the SF that uses more amount
6And more a spot of oxygen, as the etching gas of the etching step second time.Because insulating barrier 14 is different with the etching selectivity of passivation layer 16, so remove the insulating barrier 14 that remains in the first metal layer 12A top, and etching is positioned at the passivation layer 16 of second metal level 12B top, simultaneously also can the etching first contact hole 20A and the side of the interior passivation layer 16 of the second contact hole 20B, make in win the contact hole 20A and the second contact hole 20B, has different inclination angle up and down corresponding to passivation layer 16, wherein inclination angle α 1 is greater than the angle [alpha] 2 that has a down dip, α 1 is approximately greater than 70 degree and approximately less than 100 degree, and α 2 is approximately greater than 30 degree and approximately less than 70 degree.In addition in Fig. 2 F, be because insulating barrier 14 is different with the etching selectivity between the passivation layer 16 equally, and cause when carrying out etching step, on insulating barrier 14, has different inclination angle, similarly, inclination angle α 1 is greater than the angle [alpha] 2 that has a down dip, and α 1 is approximately greater than 70 degree and approximately less than 100 degree, and α 2 is approximately greater than 30 degree and approximately less than 70 degree.
Then, according to Fig. 2 E, Fig. 2 G discloses after twice etching step finished, utilization divests the mode of (stripping), remove the patterning photoresist layer 18 that is positioned at passivation layer 16 tops, afterwards, electrode layer (expression) in the drawings can be covered passivation layer 16 tops and be covered in the first contact hole 20A and the second contact hole 20B in.Yet Fig. 2 F is another preferred embodiment, and the implementation step after it is identical with the disclosed step of Fig. 2 G, does not therefore repeat them here.
According to the above, the advantage that forms contact hole by twice etching step is, avoids the over etching of the first metal layer 12A and the second metal level 12B.In addition, can improve electrode layer 22 and be exposed to the first metal layer 12A of the first contact hole 20A by twice etching step, and be exposed to the contact resistance (contact resistance) of the second metal level 12B of the second contact hole 20B, its resistance value is by 1.86*10
8The ohmmic drop is low to moderate 5.05*10
3Ohm.Moreover, by twice formed contact hole of etching step, and with copper as the contact resistance that is produced between metal and the electrode layer, in conventional art, utilize titanium/aluminium/titanium (Ti/Al/Ti) close as the contact resistance value that is produced between metal and the electrode layer, wherein, the material of electrode layer is transparent conductive oxide layers (transparent conductive oxide), for example indium tin oxide (ITO).
In addition, the formation method of disclosed display unit and structure also provide another preferred embodiment according to the present invention, the schematic diagram that each step shown in Fig. 3 A to Fig. 3 E forms, wherein, the structure of Fig. 3 A to Fig. 3 C and generation type thereof are identical with Fig. 2 A to Fig. 2 C, therefore, in the present embodiment, repeated description no longer.
Then, please refer to Fig. 3 D, utilize the etching ratio to be about 2: 1 to 10: 1 SF
6/ O
2For etching gas or with pure SF free from foreign meter
6Etching gas as mask, carries out etching step with patterning photoresist layer 18, and above the first metal layer 12A, etch passivation layer 16 and insulating barrier 14 successively forming the first contact hole 20A, and expose the upper surface of the first metal layer 12A; Similarly, above the second metal level 12B, remove passivation layer 16 forming the second contact hole 20B, and expose the upper surface of the second metal level 12B.At this, the employed gas etch of present embodiment is high etching ratio than with respect in the prior art, and therefore, the purpose of present embodiment is by improving fluoro-gas SF
6With oxygen (O
2) the etching ratio of gas, with etching step etch passivation layer successively 16 and insulating barrier 14, make passivation layer 16 and insulating barrier 14 high etching than under, can be to metal (the first metal layer 12A or the second metal level 12B), for example take place, have the angle of inclination and be about contact hole (first contact hole 20A or the second contact hole 20B) profiles of 70 degree to 100 degree and form for copper has the situation of over etching.
Then, identical with reference to figure 3E with previous embodiment, utilize the mode that divests photoresist (strippingphotoresist), remove the patterning photoresist layer 18 that is positioned at passivation layer 16 tops.Then, deposit thickness is about the electrode layer 22 of 700 dust to 2000 dusts again, covers in passivation layer 16 tops and the first contact hole 20A and the second contact hole 20B.Because the profile of the first contact hole 20A and the second contact hole 20B has very big angle of inclination (taper angle), can be by improving the thickness of electrode layer 22, make the electrode layer 22 in the first contact hole 20A and the second contact hole 20B that good coverage rate be arranged, therefore the same with previous embodiment, can reduce the contact resistance between metallic copper and the electrode layer 22.
The above is the preferred embodiments of the present invention only, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the claim.
Claims (8)
1. method that forms the contact hole of display unit comprises:
Substrate is provided;
Form the first metal layer on this substrate;
Forming insulating barrier covers on this first metal layer and this substrate;
Form second metal level on this insulating barrier;
Forming passivation layer is covered on this insulating barrier and this second metal level;
Forming patterning photoresist layer is covered on this passivation layer;
With this patterning photoresist layer as mask, carry out first etching step, remove partly this passivation layer and partly this insulating barrier successively, to form first contact hole in this first metal layer top, and remove this passivation layer of part that is positioned at this second metal level top, form second contact hole in this second metal level top;
With this patterning photoresist layer as mask, carry out second etching step, to remove remaining this insulating barrier of this first contact hole that is positioned at this first metal layer top, to expose the surface of this first metal layer, and remove remaining this passivation layer of this second contact hole that is positioned at this second metal level top, to expose the surface of this second metal level, the sidewall of this first contact hole angle that has a down dip that has inclination angle and be positioned at this inclination angle below wherein, this inclination angle is greater than this angle that has a down dip; And
Remove this patterning photoresist layer.
2. the method for claim 1, wherein this patterning photoresist layer is the halftoning photoresist.
3. the method for claim 1, wherein to utilize the etching ratio be 1: 2 to 1: 10 fluoro-gas to this first etching step: oxygen carries out etching.
4. method as claimed in claim 3, wherein this fluoro-gas comprises SF
6, CF
4Or CHF
3
5. the method for claim 1, wherein to utilize the etching ratio be 2: 1 to 10: 1 fluoro-gas to this second etching step: oxygen carries out etching.
6. method as claimed in claim 5, wherein this fluoro-gas comprises SF
6, CF
4Or CHF
3
7. the method for claim 1, wherein this inclination angle of this first contact hole is that 70 degree are to 100 degree.
8. the method for claim 1, wherein this of this first contact hole angle that has a down dip is that 30 degree are to 70 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610093846XA CN100405575C (en) | 2006-06-20 | 2006-06-20 | Method for forming contact holes on display device, and base plate of display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610093846XA CN100405575C (en) | 2006-06-20 | 2006-06-20 | Method for forming contact holes on display device, and base plate of display device |
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|---|---|
| CN1873946A CN1873946A (en) | 2006-12-06 |
| CN100405575C true CN100405575C (en) | 2008-07-23 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102683266B (en) * | 2011-03-16 | 2015-03-18 | 上海中航光电子有限公司 | Display device contact hole forming method |
| CN103354206B (en) | 2013-06-27 | 2017-03-15 | 北京京东方光电科技有限公司 | Via preparation method, display floater preparation method and display floater |
| CN103489757A (en) * | 2013-10-16 | 2014-01-01 | 信利半导体有限公司 | Etching method for laminated insulating film |
| KR102383745B1 (en) * | 2016-11-11 | 2022-04-08 | 삼성디스플레이 주식회사 | Display device |
| US11929283B2 (en) * | 2018-08-31 | 2024-03-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Barrier structure for semiconductor device |
| CN109599363B (en) * | 2018-11-28 | 2020-09-04 | 南京中电熊猫液晶显示科技有限公司 | Array substrate and manufacturing method thereof |
| CN110416076B (en) * | 2019-06-05 | 2021-11-12 | 福建省福联集成电路有限公司 | Method and device for improving metal line fracture |
| CN111900128B (en) * | 2020-09-30 | 2020-12-25 | 晶芯成(北京)科技有限公司 | Forming method of metal interconnection structure |
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|---|---|---|---|---|
| US5236573A (en) * | 1989-04-28 | 1993-08-17 | U.S. Philips Corporation | Mim devices, their method of fabrication and display devices incorporating such devices |
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| CN1873946A (en) | 2006-12-06 |
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