CN1642359A - Micro-nano chip type microphone and its making method - Google Patents
Micro-nano chip type microphone and its making method Download PDFInfo
- Publication number
- CN1642359A CN1642359A CN 200410000167 CN200410000167A CN1642359A CN 1642359 A CN1642359 A CN 1642359A CN 200410000167 CN200410000167 CN 200410000167 CN 200410000167 A CN200410000167 A CN 200410000167A CN 1642359 A CN1642359 A CN 1642359A
- Authority
- CN
- China
- Prior art keywords
- microphone
- wafer
- electrode layer
- microtype
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a microtype single-wafer microphone, containing a base and a microphone wafer; the microphone wafer has a substrate connected with the base and a sound energy inducing part; as a sound energy acts on the inducing part, a vibrating film of the inducing part will correspondingly deform to make a capacitor composed of two spaced electrode layers of the inducing part, and the air flow caused by the deformation of the vibrating film flows freely from the air gap between the two electrode layers through many gaps spacing the two electrode layers into a space enclosed by the base, making it have a preset frequency response.
Description
Technical field
The present invention relates to a kind of microphone and manufacture method thereof, particularly relate to a kind of microphone and manufacture method thereof of microtype single-wafer.
Background technology
Because the development trend of electronic product is to develop toward frivolous, the small and exquisite direction of volume always, the development of microphone is no exception certainly, and the manufacturing of the microphone wafer in microwafer formula microphone development, can can improve synchronously along with the progress of manufacture of semiconductor or micro-electromechanical technology, and can accurately control the volume size of finished product, therefore become main development object.
General microwafer formula microphone, be with a microphone wafer and an effect electric crystal electrically connect, and mutual encapsulation forms in a pedestal, pedestal is electrically connected on the circuit board of an electric product then, and the normal start of microwafer formula microphone is used; Above-mentioned microphone wafer can be divided into two kinds, and the one, the back for preparing a vibrating diaphragm chip and a back board wafer respectively, bonding again (bonding) all-in-one-piece twin-wafer type microphone wafer; Another then is the monocrystalline chip microphone wafer that directly forms each detail structure from a base material, after being specified in one by one now.
As shown in Figure 1, applied twin-wafer type microphone wafer 2 in the existing microwafer formula microphone 1 comprises a vibrating diaphragm chip 21 and that can receive an acoustic energy and can be electrically connected at back board wafer 22 on the pedestal 300.
This vibrating diaphragm chip 21 is to use micro-electromechanical technology to be prepared from, and has a cross section and slightly is vibrating diaphragm that a V-shape electrode layer 211, forms by electrode layer 211 212, downwards by these vibrating diaphragm 212 downward spacing blocks 213 that form.
This back board wafer 22 equally also is to use micro-electromechanical technology to be prepared from, has a back plate electrode layer 222 that is formed with most perforation 221, reach one from these back plate electrode layer 222 downward back of the body air chamber layers 223 that forms, this back of the body air chamber layer 223 defines a back of the body air chamber 24 that communicates with this plurality of through holes 221.
This back board wafer 22 with the spacing block 213 of this back plate electrode layer 222 and this vibrating diaphragm chip 21 bonding after, this back board wafer 22 is integrally formed this twin-wafer type microphone wafer 2 with this vibrating diaphragm chip 21, simultaneously, this vibrating diaphragm 212, spacing block 213, with this backboard 222 define jointly one with these the perforation 221 oscillation spaces that communicate 23; This electrode layer 211, vibrating diaphragm 212, with the back plate electrode layer 222 common electric capacity that forms, and when this electrode layer 211 is subjected to this Burning in Effect of Sound Energy, this vibrating diaphragm 212 can produce corresponding deformation, and make this electric capacity produce change accordingly, this effect electric crystal 200 can be transformed into an electronic signal with this capacitance variations and transmit, simultaneously, the air-flow that is produced during vibrating diaphragm 212 deformation can mat these bore a hole and 22 1 freely flow at this oscillation space 23 and 24 of back of the body air chambers, and have good frequency response when microwafer formula microphone 1 is used.
As shown in Figure 2, existing microwafer formula microphone 1 ' interior applied monocrystalline chip microphone wafer 3, its essential structure is roughly similar to above-mentioned twin lamella microphone wafer 2, does not exist together only to be that monocrystalline chip microphone wafer 3 is to use micro-electromechanical technology to prepare from a silicon substrate one.
This monocrystalline chip microphone wafer 3 has one and can be formed at back of the body air chamber layer 31, on this silicon substrate 30 with the silicon substrate 30, that pedestal 300 is connected and be formed at back plate electrode layer 32, on this back of the body air chamber layer 31 and be formed at spacing block 33, on this back plate electrode layer 32 and be formed at a vibrating diaphragm 34 on this spacing block 33 and an electrode layer 35 that is formed on this vibrating diaphragm 34.
This back of the body air chamber layer 31 defines a back of the body air chamber 311; This back plate electrode layer 32 has most perforation 321; This back plate electrode layer 32, spacing block 33, vibrating diaphragm 34 common oscillation spaces 36 that form, but and 311 mats of this oscillation space 36 and back of the body air chamber these bore a hole and 321 be connected; This electrode layer 35, vibrating diaphragm 34 are with the back plate electrode layer 32 common electric capacity that forms.
When Burning in Effect of Sound Energy during in this electrode layer 35, this vibrating diaphragm 34 can produce corresponding deformation, and make this electric capacity produce change accordingly, this effect electric crystal 200 can be transformed into an electronic signal with this capacitance variations and transmit, simultaneously, the air-flow that is produced during vibrating diaphragm 34 deformation can mat these perforation 321 freely flow at this oscillation space 36 and 311 of back of the body air chambers, and have the frequency response of getting well when making microwafer formula microphone 1 ' use.
No matter above-mentioned is twin-wafer type microphone wafer 2 or monocrystalline chip microphone wafer 3, all is to use micro-electromechanical technology, for example designs light shield, goes up photoresistance, exposure, development, deposition, etching---or the like processing procedure is prepared finishes; And be familiar with micro-electromechanical technology or manufacture of semiconductor technology personage all knows, when the body etching (BulkEtching) of carrying out micro-electromechanical technology, not only must cost carry out for a long time, simultaneously, also long because of the processing procedure time, uncontrollable during this time factor also can increase simultaneously, and makes as the wayward as expection of etched result desirable.
No matter above-mentioned be twin-wafer type microphone wafer 2 or monocrystalline chip microphone wafer 3, it forms back of the body air chamber 24, and when forming electrode layer 211, all must belong to the etched etching process of body, general etch depth is all between 300 to 500 microns, therefore, not only must expend for a long time and carry out, simultaneously, the moulding result after the etching also may not use up as perfect as the initial design, and the quality result who makes microwafer formula microphone is not as expection.
Therefore how to improve body etch process with microphone wafer, or improve the structure of microphone wafer itself, to reduce or need not carry out time-consuming body etch process at all, to save the processing procedure time cost, and try to achieve more perfect microphone quality of finished, be the target that the microphone dealer studies improvement.
Summary of the invention
Therefore, purpose of the present invention promptly is used for microwafer formula microphone providing a kind of, and need not expends the microphone wafer of carrying out the body etch process for a long time, and makes the method for this kind microphone.
According to a kind of microtype single-wafer microphone of the present invention, comprise a pedestal, and a microphone wafer; This pedestal has a housing that defines an accommodation space, can be electrically connected on the circuit board; This microphone wafer is packaged in this accommodation space and electrically connects with this housing, has a base material that is connected with this housing, an and induction part that upwards forms from this base material, this induction part comprises one and first electrode layer that is connected of base material, one and this first electrode layer the second electrode lay, most spacing block that is laid between this first and second electrode layer separately spaced apartly, and a vibrating diaphragm that is connected with this second electrode lay, this first and second electrode layer is common to constitute an electric capacity; When a Burning in Effect of Sound Energy during in this induction part, this vibrating diaphragm is understood corresponding generation deformation and is made this electric capacity to change, simultaneously, the air-flow that this vibrating diaphragm deformation causes is that the space between this first and second electrode layer flows in this accommodation space via these spacing blocks backlash freedom to each other.
In addition, the manufacture method of a kind of microtype single-wafer microphone of the present invention comprises the following step:
(a) on a silicon substrate, form one first electrode layer.
(b) on this first electrode layer, upwards form most separately and contour spacing block, and one with the contour sacrifice layer of these spacing blocks, this sacrifice layer is arranged in these spacing blocks and encloses the regional extent that the structure boundary goes out.
(c) on these spacing blocks and this sacrifice layer, upwards form a vibrating diaphragm.
(d) on this vibrating diaphragm, form a second electrode lay.
(e) remove this sacrifice layer, make the common formation of this first and second electrode layer one electric capacity, finish a microphone wafer.
(f) this microphone wafer is packaged in the pedestal that can enter for an acoustic energy.
Description of drawings
The present invention is described in detail below in conjunction with drawings and Examples:
Fig. 1 is a cutaway view, illustrates that existing one uses the microwafer formula Mike wind structure of twin-wafer type microphone wafer.
Fig. 2 is a cutaway view, illustrates that existing one uses the microwafer formula Mike wind structure of monocrystalline chip microphone wafer.
Fig. 3 is a cutaway view of first preferred embodiment of microtype single-wafer microphone of the present invention.
Fig. 4 is a vertical view of this first preferred embodiment.
Fig. 5 is a cutaway view of second preferred embodiment of microtype single-wafer microphone of the present invention.
Fig. 6 is the flow chart of one first preferred embodiment of the manufacture method of microtype single-wafer microphone of the present invention.
Fig. 7 is the cutaway view of first preferred embodiment of the manufacture method of this microtype single-wafer microphone, illustrates with micro electro mechanical system (MEMS) technology manufacturing microtype single-wafer microphone as shown in Figure 3, implements the corresponding aspect after the step of Fig. 6.
Fig. 8 is the cutaway view of first preferred embodiment of the manufacture method of this microtype single-wafer microphone, illustrates with micro electro mechanical system (MEMS) technology manufacturing microtype single-wafer microphone as shown in Figure 3, implements the corresponding aspect after the step of Fig. 6.
Fig. 9 is the cutaway view of first preferred embodiment of the manufacture method of this microtype single-wafer microphone, illustrates with micro electro mechanical system (MEMS) technology manufacturing microtype single-wafer microphone as shown in Figure 3, implements the corresponding aspect after the step of Fig. 6.
Figure 10 is the vertical view of Fig. 9, the corresponding aspect after the step of aid illustration enforcement Fig. 6.
Figure 11 is the cutaway view of first preferred embodiment of the manufacture method of this microtype single-wafer microphone, illustrates with micro electro mechanical system (MEMS) technology manufacturing microtype single-wafer microphone as shown in Figure 3, implements the corresponding aspect after the step of Fig. 6.
Figure 12 is the vertical view of Figure 10, the corresponding aspect after the step of aid illustration enforcement Fig. 6.
Figure 13 is the cutaway view of first preferred embodiment of the manufacture method of this microtype single-wafer microphone, illustrates with micro electro mechanical system (MEMS) technology manufacturing microtype single-wafer microphone as shown in Figure 3, implements the corresponding aspect after the step of Fig. 6.
Figure 14 is the cutaway view of first preferred embodiment of the manufacture method of this microtype single-wafer microphone, illustrates with micro electro mechanical system (MEMS) technology manufacturing microtype single-wafer microphone as shown in Figure 3, implements the corresponding aspect after the step of Fig. 6.
Figure 15 is the vertical view of Figure 14, the corresponding aspect after the step of aid illustration enforcement Fig. 6.
Embodiment
For convenience of description, at following embodiment, similar elements is to represent with same numeral.
Be that a kind of microtype single-wafer microphone of the present invention and manufacture method thereof mainly are to use micro electro mechanical system (MEMS) technology to make, and cooperate silicon, or siliceous compound, for example silicon nitride (Si what this will illustrate earlier
3N
4), silicon dioxide (SiO
2) be material, for example BCB (benzocyclobutene), SIN, polyimide (polyimidePI) or industry are practised the resistance materials such as SU-8 that claim and also can the demand of looking be applied for other; Simultaneously, when forming each detail structure, all must optionally carry out as film growth, little shadow cover curtain, etching moulding---or the like the semiconductor wafer molding manufacture procedure; Because micro electro mechanical system (MEMS) technology is the development and application many decades, and the semiconductor wafer molding manufacture procedure is thought the known technology of industry especially, simultaneously, of the present inventionly focus on using the technology that these industries are known, make the microphone wafer of a novel structure, but not the details that is every processing procedure improves, so do not add these processing procedures of explaining one by one at this; But in order to be illustrated more clearly in manufacture method of the present invention, below still be illustrated with the manufacture process of a reality, but the skill personage who knows micro electro mechanical system (MEMS) technology is when knowing that a kind of microtype single-wafer microphone of the present invention and manufacture method thereof are not exceeded in the following instructions.
Shown in Fig. 3,4, one first preferred embodiment of a kind of microtype single-wafer microphone 4 of the present invention comprises a pedestal 5, an effect electric crystal 6, and a microphone wafer 7.
As shown in Figure 3, this pedestal 5 has a housing 51, this housing 51 comprises a diapire 52, one by the upwardly extending periphery wall 53 of outer peripheral edges of this diapire 52, one loam cake 54 that can penetrate for the acoustic energy in an external world, and most electrode contacts 55 that are laid on this diapire 52, this diapire 52 defines an accommodation space 56 jointly with periphery wall 53, for encapsulation this effect electric crystal 6 and this microphone wafer 7, this loam cake 54 can be connected with an apical margin of this periphery wall 53 and seal this accommodation space 56, this acoustic energy is only entered by this loam cake 54 and act on the microphone wafer 7 that is packaged in this accommodation space 56, this each electrode contact 55 is electrically connected at surface mount technology (SMT) on the circuit board 400 of electric equipment products, for this microphone wafer 7 that electrically conducts, field effect electric crystal 6 and this circuit board 400.
This effect electric crystal 6 is existing electronic components, can be placed in the accommodation space 56 and and be connected with diapire 52, and simultaneously with the partial electrode contact 55 of microphone wafer 7, pedestal 5 electrically connect mutually, and can be with the electrical change of microphone wafer 7, for example capacitance variations, change in voltage etc. are transformed into electronic signal and outwards transmission; And the mode that a general effect electric crystal 6 forms has two, one, has been prepared into single electronic element in advance, capable again electrically connect in successive process; Another then is when carrying out the processing procedure of microphone wafer 7 with micro-electromechanical technology, is built in the microphone wafer 7 in synchronously; In present embodiment and diagram, this effect electric crystal 6 is with synchronous built-in being formed in this microphone wafer 7, because these integrate the skill of various electronic component in single wafer, is the field category that belongs to another circuit design, and non-emphasis of the present invention place is so no longer describe in detail at this.
This microphone wafer 7 is packaged in the accommodation space 56 of this pedestal 5, and partial electrode contact 55 and this effect electric crystal 6 with this pedestal 5 electrically connects simultaneously, have a base material 71 that is connected with this diapire 52, and an induction part 72 that upwards forms from this base material 71.This base material 71 is silicon wafers of being cut apart by Silicon Wafer.
Cooperate as shown in Figure 4 simultaneously, this induction part 72 comprises the second electrode lay 723 that first electrode layer 721 that upwards forms from this base material 71, most spacing block that more upwards forms from this first electrode layer 721 722, upwards form from these spacing blocks 722, and a lip-deep vibrating diaphragm 724 that is formed at relative this first electrode layer 721 of this second electrode lay 723; This first and second electrode layer 721,723 is respectively with a conductor material, and for example metal constitutes, and can apply a predetermined bias to polarize the common electric capacity that constitutes; These spacing blocks 722 are an annular distribution spaced apartly, each spacing block 722 has a predetermined cross sectional shape (only be Ju shape with the cross section in the diagram but vary in size and be the example explanation) respectively, but flow the vibration oscillation space 725 that flows and make these spacing blocks 722 jointly the space boundary between this first electrode layer 721, the vibrating diaphragm 724 be gone out an air feed, matched in clearance between adjacent two spacing blocks 722 forms a predetermined aspect simultaneously, and these gaps that form predetermined aspect of this oscillation space 725 and these accommodation space 56 mats are connected.
When acoustic energy passes this loam cake 54 and acts on this induction part 72, this vibrating diaphragm 724 is understood corresponding generation deformation and is made this electric capacity to change, this effect electric crystal 6 converts this capacitance variations to electronic signal synchronously and outwards transmits, simultaneously, the air-flow that these vibrating diaphragm 724 deformation cause, can in this oscillation space 725 and this accommodation space 56, flow freely via this plural number gap, and make this chip-type microphone 4 have predetermined frequency response.
As shown in Figure 5, a kind of microtype single-wafer microphone 4 of the present invention ' one second preferred embodiment, be similar to above-mentioned this first preferred embodiment, its do not exist together only be this microphone wafer 7 ' induction part 72 ', below only with regard to its explanation in detail that do not exist together.
This induction part 72 ' more comprise one with electret, the electret layer 727 that forms of silica, silicon nitride, Teflon or the like for example, this electret layer 727 can be formed on this first electrode layer 721 or this second electrode lay 723, in this example, be to be formed at this first electrode layer 721 and to go up be the example explanation on a surface of this vibrating diaphragm 724 relatively with electret layer 727; After the polarization, this first and second electrode layer 721,723 can constitute electric capacity jointly by this electret layer 727, and can the predetermined effect of as above routine described performance.
Moreover one the 3rd preferred embodiment of a kind of microtype single-wafer microphone of the present invention is similar to above-mentioned this first and second preferred embodiment, and it does not exist together and only is how to make the common mode that constitutes an electric capacity of first and second electrode layer of this induction part; In the present embodiment, this induction part more comprises a floating electrode unit (floating electrode) that electric charge can be provided, the floating electrode unit makes this first and second electrode layer band predetermined charge and constitutes an electric capacity by this, and can be as the predetermined effect of performance as above-mentioned two examples.
As shown in Figure 6, one first preferred embodiment of the manufacture method 8 of microtype single-wafer microphone of the present invention is the described microtype single-wafer microphone 4 of first preferred embodiment that can make the invention described above microtype single-wafer microphone.
At first carry out step 81, use manufacture of semiconductor and in a silicon be on the base material 71 of material and form an effect electric crystal 6, as shown in Figure 7, to form the process of an effect electric crystal known by industry owing to use manufacture of semiconductor on silicon substrate, and non-emphasis of the present invention place, so no longer describe in detail.
Then carry out step 82, select a conductive conductor material for use, for example metal in modes such as evaporation, sputters, deposits skim, and forms first electrode layer 721, as shown in Figure 8 on this base material 71.
Shown in Fig. 9,10, carry out step 83 again, manufacture of semiconductor such as application examples such as photoresistance coating, film growth, little shadow cover curtain, on this first electrode layer 721, form most separately and contour spacing block 722, an and sacrifice layer 728 contour with these spacing blocks 722, the light shield that this each spacing block 722 can be used predetermined aspect forms, make the cross sectional shape of each spacing block 722, and two gap of being constituted of adjacent spacing block 722, all have predetermined aspect, this sacrifice layer 728 also is arranged in the regional extent that the structure boundary goes out that these spacing blocks 722 enclose.
These spacing block 722 selected materials can be silicon, siliceous oxide, siliceous nitride, photoresistance, or the like, these sacrifice layer 728 selected materials then can be polysilicon, siliceous oxide, aluminium, siliceous nitride, photoresistance etc., but being familiar with the manufacture of semiconductor personage all knows, selecting for use of these materials must cooperate follow-up etch process and variation to some extent, because emphasis of the present invention is not to be that etch process improves with the relevant cooperation of material, so in this detailed description.
Then carry out step 84, select for example silicon, siliceous oxide, siliceous nitride, photoresistance for use, mat these spacing blocks 722 and this sacrifice layer 728 more upwards form vibrating diaphragm 724 from these spacing blocks 722 with this sacrifice layer 728, shown in Figure 11,12.
As shown in figure 13, carry out step 85, select a conductive conductor material for use, for example metal in modes such as evaporation, sputters, deposits skim on this vibrating diaphragm 724, and forms the second electrode lay 723.
Shown in Figure 14,15, carry out step 86, etching removes this sacrifice layer 728, and makes this first and second electrode layer 721,723 constitute an electric capacity to apply a bias voltage mode, finishes the preparation of microphone wafer 7.
Carry out step 87 at last, this microphone wafer 7 is packaged in the pedestal 5 that can enter for an acoustic energy, and make this pedestal 5, an effect electric crystal 6, microphone wafer 7 form predetermined electrically connect, finish the manufacturing of microtype single-wafer microphone 4, as shown in Figure 3.
One second preferred embodiment of the manufacture method of microtype single-wafer microphone of the present invention is can make as shown in Figure 5, the described microtype single-wafer microphone 4 of second preferred embodiment of microtype single-wafer microphone of the present invention '; Modern only describe with regard to parts different in present embodiment and above-mentioned this first preferred embodiment.
Present embodiment is in the step 82 of last example, form the back of first electrode layer 721, select an electret again for use, for example silica, silicon nitride, Teflon or the like, in modes such as deposition or rotary coating, on this first electrode layer 721, form this electret layer 727 again; And cooperate the formation of this electret layer 727, remove the back of sacrifice layer 728 in step 86 etching, polarized, this electret layer 727 of mat makes this first and second electrode layer 721,723 constitute an electret formula electric capacity, finish microphone wafer 4 ' preparation; Because other each steps are all similar to this first preferred embodiment, so no longer add to give unnecessary details at this.
Certainly, make the described microtype single-wafer microphone of the 3rd preferred embodiment of the invention described above microtype single-wafer microphone for correspondence, one the 3rd preferred embodiment of the manufacture method of microtype single-wafer microphone of the present invention, be similar to the described manufacture process of this first preferred embodiment, it does not exist together and only is that this example is in the step 81 of last example, when forming this effect electric crystal 6, but must form the floating electrode unit of a store charge synchronously, then, and cooperate this floating electrode unit, remove the back of sacrifice layer 728 in step 86 etching, by this floating electrode unit provide predetermined charge make this first, two electrode layers 721,723 constitute an electric capacity, finish the preparation of microphone wafer; Because other each steps are all similar to this first preferred embodiment, so no longer add to give unnecessary details at this.
As shown in the above description, microtype single-wafer microphone 4,4 of the present invention ' manufacture method, be not applied to the body etch process, therefore can significantly improve to have now and must expend the shortcoming of carrying out the body etch process for a long time, and can significantly save the processing procedure time cost, with the fraction defective of reduction microphone quality of finished, and reach purpose of the present invention really.
Claims (10)
1. a microtype single-wafer microphone comprises a pedestal, a microphone wafer, it is characterized in that:
This pedestal has a housing that defines an accommodation space, can be electrically connected on the circuit board; And
One is packaged in this accommodation space and the microphone wafer that electrically connects with this housing, has a base material that is connected with this housing, an and induction part that upwards forms from this base material, this induction part comprises one and first electrode layer that is connected of base material, one and this first electrode layer the second electrode lay, most spacing block that is laid between this first and second electrode layer separately spaced apartly, and a vibrating diaphragm that is connected with this second electrode lay, this first and second electrode layer is common to constitute an electric capacity; When a Burning in Effect of Sound Energy during in this induction part, this vibrating diaphragm is understood corresponding generation deformation and is made this electric capacity to change, simultaneously, the air-flow that this vibrating diaphragm deformation causes is that the space between this first and second electrode layer flows in this accommodation space via these spacing blocks backlash freedom to each other.
2. microtype single-wafer microphone as claimed in claim 1 is characterized in that:
More comprise one respectively with this microphone wafer and this housing electrically connect the field effect electric crystal, convert this capacitance variations to an electronic signal.
3. microtype single-wafer microphone as claimed in claim 1 is characterized in that:
First and second electrode layer of this induction part forms with a conductive conductor material respectively, and applies a predetermined bias after-polarization and constitute this electric capacity.
4. microtype single-wafer microphone as claimed in claim 1 is characterized in that:
First and second electrode layer of this induction part forms with a conductive conductor material respectively, but and this induction part more comprise the floating electrode unit of a store charge, make this first electrode layer or the second electrode lay band predetermined charge and constitute this electric capacity.
5. microtype single-wafer microphone as claimed in claim 1 is characterized in that:
First and second electrode layer of this induction part forms with a conductive conductor material respectively, and this induction part more comprises one makes this first and second electrode layer divide the electret layer of being with predetermined charge and can constituting this electric capacity jointly, this electret layer is made of the material that is selected from by the following group that constitutes: silica, silicon nitride, Teflon, and these one of the combination.
6. the manufacture method of a microtype single-wafer microphone is characterized in that comprising the following step:
(a) on a silicon substrate, form one first electrode layer;
(b) on this first electrode layer, upwards form most separately and contour spacing block, and one with the contour sacrifice layer of these spacing blocks, this sacrifice layer is arranged in these spacing blocks and encloses the regional extent that the structure boundary goes out;
(c) on these spacing blocks and this sacrifice layer, upwards form a vibrating diaphragm;
(d) on this vibrating diaphragm, form a second electrode lay;
(e) remove this sacrifice layer, make the common formation of this first and second electrode layer one electric capacity, finish a microphone wafer; And
(g) this microphone wafer is packaged in the pedestal that can enter for an acoustic energy.
7. the manufacture method of microtype single-wafer microphone as claimed in claim 6 is characterized in that:
This step (a) more comprises one preposition step (a1), uses manufacture of semiconductor and form an effect electric crystal on this base material.
8. the manufacture method of microtype single-wafer microphone as claimed in claim 6 is characterized in that:
When this preposition step (a1) application manufacture of semiconductor forms this effect electric crystal on this base material, but form the floating electrode unit of a store charge synchronously, and in this step (e), provide electric charge to make the common formation of this first and second electrode layer one electric capacity with this floating electrode unit.
9. the manufacture method of microtype single-wafer microphone as claimed in claim 6 is characterized in that:
This step (a), (d) select for use a conductive conductor material to form this first and second electrode layer respectively, and apply a bias voltage make that this first and second electrode layer polarization back is common to constitute an electric capacity in this step (e).
10. the manufacture method of microtype single-wafer microphone as claimed in claim 6 is characterized in that:
More comprise a step (g), be to select for use to comprise silica, silicon nitride, Teflon, and/or the electret of these combination forms an electret layer, and this step (g) is in the preceding enforcement of this step (b), this electret layer is formed on this first electrode layer, or, this electret layer is formed on this second electrode lay in the preceding enforcement of this step (e).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410000167 CN1642359A (en) | 2004-01-08 | 2004-01-08 | Micro-nano chip type microphone and its making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410000167 CN1642359A (en) | 2004-01-08 | 2004-01-08 | Micro-nano chip type microphone and its making method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1642359A true CN1642359A (en) | 2005-07-20 |
Family
ID=34866656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410000167 Pending CN1642359A (en) | 2004-01-08 | 2004-01-08 | Micro-nano chip type microphone and its making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1642359A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102455818A (en) * | 2010-10-27 | 2012-05-16 | 联建(中国)科技有限公司 | Touch panel and touch display panel |
| CN101422053B (en) * | 2006-04-27 | 2012-09-26 | 欧姆龙株式会社 | Microphone manufacturing method |
-
2004
- 2004-01-08 CN CN 200410000167 patent/CN1642359A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101422053B (en) * | 2006-04-27 | 2012-09-26 | 欧姆龙株式会社 | Microphone manufacturing method |
| CN102455818A (en) * | 2010-10-27 | 2012-05-16 | 联建(中国)科技有限公司 | Touch panel and touch display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1203726C (en) | Silicon-based sensor system | |
| CN1163105C (en) | Piezoelectric electroacoustic transducer | |
| US9002040B2 (en) | Packages and methods for packaging MEMS microphone devices | |
| CN1170457C (en) | Electrosonic energy transducer | |
| CN1909746A (en) | Condenser microphone | |
| CN1677705A (en) | Electronic component, electronic component module and mfg. method for said electronic component | |
| US20080123876A1 (en) | Electrostatic pressure transducer and manufacturing method therefor | |
| CN1165149C (en) | Piezoelectric electroacoustic transducer and its manufacturing method | |
| CN1868119A (en) | Solidly mounted stacked bulk acoustic resonator | |
| CN1822722A (en) | Semiconductor sensor | |
| CN1545484A (en) | Process for producing microelectromechanical components | |
| CN1815646A (en) | Variable capacitor and method of manufacturing variable capacitor | |
| CN104113810A (en) | MEMS microphone and preparation method thereof and electronic device | |
| JP2010283418A (en) | Stereo microphone apparatus | |
| KR20090059756A (en) | Piezoelectric micro speaker using micro electro mechanical systems and manufacturing method thereof | |
| CN1933681A (en) | Condenser microphone | |
| JP2006012889A (en) | Method for manufacturing semiconductor chip and semiconductor device | |
| CN1237829A (en) | Chip-type resonator comprising | |
| CN101742389A (en) | Integrated circuit structure and forming method thereo | |
| CN110113700A (en) | A kind of MEMS structure | |
| KR102068426B1 (en) | Manufacturing method of ceramic packaging substrate with copper plating perimeter dam | |
| CN104811881B (en) | Piezoelectric speaker and forming method thereof | |
| CN1142626C (en) | Ladder-type filter | |
| CN1642359A (en) | Micro-nano chip type microphone and its making method | |
| CN1551344A (en) | Semiconductor device and stacked semiconductor devcie and their manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20050720 |