CN1822722A - Semiconductor sensor - Google Patents
Semiconductor sensor Download PDFInfo
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- CN1822722A CN1822722A CN 200610006986 CN200610006986A CN1822722A CN 1822722 A CN1822722 A CN 1822722A CN 200610006986 CN200610006986 CN 200610006986 CN 200610006986 A CN200610006986 A CN 200610006986A CN 1822722 A CN1822722 A CN 1822722A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Landscapes
- Pressure Sensors (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Obtaining Desirable Characteristics In Audible-Bandwidth Transducers (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
A semiconductor sensor for improving manufacturing productivity. Opposing electrodes, or a diaphragm electrode and a fixed electrode, form an electrostatic capacity sensing semiconductor microphone on a microphone chip. A through electrode is formed on the microphone chip by a conductor extending between the upper and lower surfaces of the semiconductor substrate. The through electrode directly and electrically connects a MEMS configuration formed by the diaphragm electrode to the wiring of a printed wiring board without using wire bonding.
Description
Technical field
The present invention relates to have the semiconductor transducer of the barrier film (diaphragm) that is formed on the semiconductor substrate, especially relate to the improvement of the electric connection structure that improves semiconductor transducer productivity ratio.
Background technology
In recent years, on semiconductor substrate, form machine components (movable part) and electronic component MEMS (micro-electromechanical system: technological progress Micro Electro Mechanical System), developed tiny semiconductor transducer with the barrier film that is formed on the semiconductor substrate.The practical example of diaphragm type semiconductor transducer is sound transducer, pressure sensor, acceleration transducer etc.
One example of diaphragm type sound transducer is that disclosed electrostatic capacitance detects the N-type semiconductor N loudspeaker in the clear 60-500841 communique of special table.The semiconductor loudspeaker of electrostatic capacitance sensing type has: according to the septum electrode of sound press vibration; Be fixed on the fixed electrode on the semiconductor substrate.Septum electrode is relative with fixed electrode to be disposed.Because of the vibration of septum electrode, two interelectrode variable in distance.The variation of two interelectrode distances makes the electrostatic capacitance change of the capacitor that is formed by two electrodes.Electrostatic capacitance detects the N-type semiconductor N loudspeaker according to the change in voltage of following electrostatic capacitance change, output detection signal.
Shown to disclose in the 2004-537182 communique encapsulation of protecting the semiconductor substrate (sensor chip) that has formed the diaphragm type semiconductor transducer the spy.In this encapsulation, sensor chip is bonded on the tellite with the IC chip of the control that has formed this transducer with integrated circuit, and the surface of tellite is covered by lid.Sensor chip is for the ease of exposing barrier film, MEMS structures such as its barrier film usually with the semiconductor substrate face that is bonded in tellite one side opposition side on form.Therefore, originally the IC chip in encapsulation or the distribution of tellite and sensor chip by wire-bonded.
In order to carry out wire-bonded, need on tellite and both surfaces of sensor chip, form to engage and use electrode pad.Electrode pad increases the erection space of tellite and sensor chip, causes the maximization of the package module of semiconductor transducer.
In terminal conjunction method, have because of producing the bad possibility of manufacturing to engaging the ultrasonic vibration that produces when lead-in wire with electrode pad connects.The common semiconductor device that does not have the MEMS structure and since its almost whole be that the strong body (bulk) that does not have gap or thin thread part, thinner wall section substantially constitutes, so anti-ultrasonic wave is than higher.Relative therewith, have the semiconductor transducer of movable part such as barrier film, multiform becomes gap or thin thread part, thinner wall section, and it is bad easily to produce the manufacturing that causes because of ultrasonic vibration.Especially in the loudspeaker that detects sound,,, more be subject to the influence of ultrasonic vibration so compare with other diaphragm type semiconductor transducers such as pressure sensor or acceleration transducers owing to can not make the rigidity of barrier film too high for improving its sensitivity.
Terminal conjunction method increases production cost.Generally, use metal or aluminium as the bonding electrodes pad.In the semiconductor device that does not have the MEMS structure, as its material low aluminium of materials used cost often.And in the semiconductor transducer with MEMS structure, need remove the sacrifice layer that when the formation of its movable part, causes by hydrofluoric acid, because the aluminium use high to the dissolubility of hydrofluoric acid is limited,, cause production cost to increase so have to use the more metal of high price.
Summary of the invention
The semiconductor transducer that the object of the present invention is to provide a kind of productivity ratio to improve.
An aspect of of the present present invention provides a kind of semiconductor transducer, wherein possesses: have the 1st, reach and above-mentioned the 1st the 2nd opposite semiconductor substrate; Be located at the barrier film on above-mentioned the 1st of above-mentioned semiconductor substrate; With the through electrode that connects above-mentioned semiconductor substrate.
Another aspect of the present invention provides a kind of semiconductor transducer package module, wherein possesses: tellite; Be installed on the above-mentioned tellite, assist with above-mentioned tellite and move the lid of distinguishing the inner space; Be configured in the above-mentioned inner space, and be bonded in semiconductor transducer on the above-mentioned tellite.Above-mentioned semiconductor transducer comprises: semiconductor substrate, its have the 1st, with above-mentioned the 1st opposite the 2nd, and be communicated with above-mentioned the 1st and above-mentioned the 2nd the 1st hole on the 1st position and on the 2nd position, be communicated with above-mentioned the 1st and above-mentioned the 2nd the 2nd hole (electrode hole); Fixed electrode, it is arranged on above-mentioned the 1st position on above-mentioned the 1st of above-mentioned semiconductor substrate; Septum electrode, its on above-mentioned the 1st above-mentioned the 1st position of above-mentioned semiconductor substrate, reserve the air gap and with said fixing electrode opposite and variable bit; And through electrode, it is embedded in above-mentioned the 2nd hole, and is communicated with above-mentioned the 1st and above-mentioned the 2nd of above-mentioned semiconductor substrate.
Another aspect of the present invention provides a kind of manufacture method of semiconductor transducer, and wherein this semiconductor transducer possesses: have the 1st, reach and above-mentioned the 1st the 2nd opposite semiconductor substrate; Be located at the barrier film on above-mentioned the 1st of above-mentioned semiconductor substrate; With the 1st and above-mentioned the 2nd through electrode connecting above-mentioned semiconductor substrate.This manufacture method comprises: etching work procedure, it forms the 1st hole and the 2nd hole simultaneously, the 1st hole is on the 1st position of the above-mentioned barrier film of formation of above-mentioned semiconductor substrate, between above-mentioned the 1st and above-mentioned the 2nd, extend, extend between above-mentioned the 1st and above-mentioned the 2nd on the 2nd position of the above-mentioned through electrode of formation of above-mentioned semiconductor substrate in the 2nd hole; With electric conductor is imbedded in above-mentioned the 2nd hole, to form the operation of above-mentioned through electrode.
Another aspect of the present invention provides a kind of manufacture method of semiconductor transducer, and wherein this semiconductor transducer possesses: have the 1st, reach and above-mentioned the 1st the 2nd opposite semiconductor substrate; Be located at the barrier film on above-mentioned the 1st of above-mentioned semiconductor substrate; With the 1st and above-mentioned the 2nd through electrode connecting above-mentioned semiconductor substrate.This manufacture method has: etching work procedure, it forms the 1st hole and the 2nd hole simultaneously, the 1st hole is on the 1st position of the above-mentioned barrier film of formation of above-mentioned semiconductor substrate, opening is arranged, arranged the end at above-mentioned the 2nd face at above-mentioned the 1st face, there is opening in the 2nd hole, at above-mentioned the 2nd face is arranged the end at above-mentioned the 1st face on the 2nd position of the above-mentioned through electrode of formation of above-mentioned semiconductor substrate; With from above-mentioned the 1st the above-mentioned opening of electric conductor being imbedded above-mentioned the 2nd hole of above-mentioned semiconductor substrate, to form the operation of above-mentioned through electrode.
Alternate manner of the present invention and advantage can be understood by the accompanying drawing of the example of representing principle of the present invention and following record.
Description of drawings
Fig. 1 is the stereogram of package module of the semiconductor transducer of the present invention's the 1st execution mode.
Fig. 2 is the profile of the package module of Fig. 1.
Fig. 3 A, B, C are respectively vertical view, upward view and the profiles of the microphone chip that package module comprised of Fig. 1.
Fig. 4 is the part amplification profile of Fig. 3 C.
Fig. 5 A, B, C are respectively vertical view, upward view and the profiles of the semiconductor transducer of the present invention's the 2nd execution mode.
Fig. 6 is the profile of semiconductor transducer package module of having taken in the semiconductor transducer of Fig. 5.
Fig. 7 A, B, C are respectively vertical view, upward view and the profiles of the semiconductor transducer of the present invention's the 3rd execution mode.
Fig. 8 is the profile of semiconductor transducer package module of having taken in the semiconductor transducer of Fig. 7.
Fig. 9 is the vertical view of semiconductor transducer array.
Figure 10 is an encapsulation profile of having taken in the semiconductor sensor chip that the manufacture method with the 4th execution mode of the present invention produces.
Figure 11 A, B are respectively the vertical view and the upward views of the semiconductor transducer of Figure 10.
Figure 12 is the profile of the semiconductor sensor chip of Figure 10.
Figure 13 is the amplification profile of through electrode of the semiconductor sensor chip of Figure 10.
Figure 14 A～K is the profile that is used to illustrate the semiconductor transducer manufacture method of the present invention's the 4th execution mode.
Figure 15 A～L is the profile that is used to illustrate the semiconductor transducer manufacture method of the present invention's the 5th execution mode.
Embodiment
The present invention of corresponding purpose and favourable part can understand the explanation of at present desirable execution mode shown below by the reference accompanying drawing.
Below, with reference to Fig. 1～Fig. 4, describe the semiconductor transducer of the present invention's the 1st execution mode in detail.The semiconductor transducer of the 1st execution mode is used in electrostatic capacitance and detects the N-type semiconductor N loudspeaker.As shown in Figure 1, 2, the semiconductor loudspeaker is the package module 10 of microphone chip 15 and IC chip 16 packedization.Microphone chip 15 works as semiconductor transducer.
In the outside of package module 10, expose tellite 11 and the lid 12 that is installed on the tellite 11.On the one side of lid 12, be formed with sound hole 14.
As shown in Figure 2, tellite 11 and lid 12 are distinguished the inner space of package module 10.In this inner space, take in the microphone chip 15 and the IC chip 16 that have semiconductor substrate respectively.Two chips, 15,16 usefulness bonding agents 17 be bonded in tellite 11 above.Microphone chip 15 has the MEMS structure that works as the sound sensor portion of electrostatic capacitance detection type.Microphone chip 15 is electrically connected with IC chip 16 by the lead-in wire that forms on tellite 11.IC chip 16 has the integrated circuit that is used to control the sound detecting means.
Fig. 3 B is the upward view of semiconductor substrate 18.Fig. 3 C is the profile of loudspeaker 15.Semiconductor substrate 18 has the 1st through hole 22 on the position that forms septum electrode 19.Be formed with a plurality of solder ball 23 across the interval on the periphery below semiconductor substrate 18.
Whole fixed electrode 20 protected films 24 can not cover movably.Between fixed electrode 20 and septum electrode 19, form gap (air gap).The periphery of septum electrode 19 is fixed on the semiconductor substrate 18.Septum electrode 19, its central part relative fixed electrode 20 is removable.The central portion of septum electrode 19 separates fully with structure on every side.On fixed electrode 20, be formed with a plurality of holes 25 that are used to remove from the air of air gap.
The electrode pad 21 (a plurality of) that is connected with septum electrode 19 and fixed electrode 20 is electrically connected with a plurality of through electrodes 26 respectively.Each through electrode 26 comprises imbeds the electric conductor (for example copper) of leading top and following the 2nd through hole (electrode hole) that is communicated with semiconductor substrate 18.Each through electrode 26 has the end that is exposed to below the semiconductor substrate 18.
As shown in Figure 4, around through electrode 26, be formed with shielding (barrier) layer 27 that constitutes by titanium nitride (TiN) and the diaphragm 28 that constitutes by silica.By screen 27 and diaphragm 28, isolate through electrode 26 and semiconductor substrate 18.As required, the wiring layer 29 that formation is made of electric conductors such as copper below semiconductor substrate 18.Wiring layer 29 is used in when connecting through electrode 26 and being configured in locational solder ball 23 from the position deviation of through electrode 26.Through electrode 26 is electrically connected on the distribution of printing distributing board 11 (with reference to Fig. 2) by solder ball 23.
According to the semiconductor transducer of the 1st execution mode, can obtain following advantage.
The top MEMS structure that through electrode 26 will be formed on semiconductor substrate 18 is directly connected on the distribution of tellite 11.Do not need to be used to connect the wire-bonded of MEMS structure and tellite 11.Therefore, the impropriety that generation that the manufacturing that does not exist erection space to increase, cause because of ultrasonic wave is bad and production cost increase can obtain the semiconductor transducer that productivity ratio improves.
With reference to Fig. 5～Fig. 6, the semiconductor transducer of the present invention's the 2nd execution mode is described.For similarly constituting, give same-sign and omit its explanation with the 1st execution mode.
As shown in Figure 6, the package module 33 of the 2nd execution mode comprises: the integrated chip 30 that both functions of the microphone chip 15 of Fig. 2 and IC chip 16 are had integratedly.Integrated chip 30 as the sound detection unit, be that semiconductor transducer works.The use of integrated chip 30 makes the miniaturization of package module 33 and the reduction of production cost become possibility.
Shown in Fig. 5 A, integrated chip 30 comprises the top loudspeaker control integrated circuit 32 that is formed on semiconductor substrate 31.Integrated circuit 32 is connected on septum electrode 19 and the fixed electrode 20 by hard wire.Integrated circuit 32 also is connected on a plurality of electrode pads 21 by distribution.
Shown in Fig. 5 C, semiconductor substrate 31 has and is formed on the corresponding locational through electrode 26 of electrode pad 21 that is connected to integrated circuit 32 with distribution.Each through electrode 26 extends from the face that faces down of semiconductor substrate 31.Each through electrode 26 is connected with the following solder ball 23 that is arranged on semiconductor substrate 31.
As shown in Figure 6, the following of integrated chip 30 bonds to tellite 11 with bonding agent 17.Integrated circuit 32 by through electrode 26 and solder ball 23, is electrically connected on the distribution of tellite 11.
According to the 2nd execution mode, can obtain the advantage identical with the 1st execution mode.
With reference to Fig. 7～Fig. 8, the semiconductor transducer of the present invention's the 3rd execution mode is described.
As the sound detection unit, be that the integrated chip 40 that semiconductor transducer works comprises: be formed on the septum electrode 19 above the semiconductor substrate 41; With the following loudspeaker control integrated circuit 42 that is formed on semiconductor substrate 41.By through electrode 26, the electrical connection between MEMS structure (19,20) that forms on the opposing face of semiconductor substrate 41 and integrated circuit 42 is easy.
Shown in Fig. 7 A, on semiconductor substrate 41, be formed with: septum electrode 19 and fixed electrode 20 and be connected to electrode pad 21 on these by distribution.Shown in Fig. 7 B, below semiconductor substrate 41, be formed with integrated circuit 42.Shown in Fig. 7 C, semiconductor substrate 41 has the through electrode 26 that forms on the electrode pad 21 pairing positions that are connected to integrated circuit 42 by distribution.Each through electrode 26 extends from the face that faces down of semiconductor substrate 41.Each through electrode 26 is connected to integrated circuit 42 by the following wiring layer 29 that is formed on semiconductor substrate 41 by distribution.
As shown in Figure 8, bond on the tellite 11 below integrated chip 40 with bonding agent 17.Be formed on the following integrated circuit 42 of semiconductor substrate 31, be electrically connected to by solder ball 23 on the distribution of tellite 11.By mounting cover 12 on tellite 11, thereby can obtain package module 43.
According to the 3rd execution mode, can obtain identical with the 1st execution mode preferential.
The the 1st to the 3rd execution mode also can change as follows.
Fig. 9 shows semiconductor array of loudspeakers 50.By a plurality of semiconductor loudspeakers of arrangement on single semiconductor substrate, thereby can make sound detection have directive property, can reduce noise simultaneously.In semiconductor array of loudspeakers 50, can use electric connection structure by above-mentioned execution mode explanation.
Because the part that semiconductor loudspeaker quantity is many, the number of electrodes of electrical connection is also many, becomes obvious so result from the bad of wire-bonded.In not needing the semiconductor array of loudspeakers of wire-bonded, can eliminate above-mentioned discomfort.
Below, with reference to Figure 10～Figure 14, the manufacture method of the semiconductor transducer of the present invention's the 4th execution mode is described.
Figure 10 has been to use the profile of package module 111 of the semiconductor transducer of the 4th execution mode.Package module 111 comprises: tellite 112 and be installed in lid 113 on this substrate 112.Tellite 112 and lid 113 are distinguished the inner space of package module 111.The IC chip 114 of semiconductor sensor chip 110 and control semiconductor sensor chip 110 is configured in the inner space of package module 111, by bonding agent 115 bond to tellite 112 above.Semiconductor sensor chip 110 is electrically connected with IC chip 114 by being formed on the top distribution of tellite 112.Lid 113 has sound hole 116 on the pairing position of the MEMS of semiconductor sensor chip 110 structure.
Shown in Figure 11 A, semiconductor sensor chip 110 comprises having the top semiconductor substrate 120 that has formed the MEMS structure.The MEMS structure comprises septum electrode 121 and fixed electrode 122.Two electrodes work as the counter electrode of capacitor.Septum electrode 121 and fixed electrode 122 are connected on the aluminum electrode pad 123 that forms on semiconductor substrate 120 by distribution.Shown in Figure 11 B, be formed with a plurality of solder ball 124 on the periphery below semiconductor substrate 120.These solder ball 124 are docked to above it when bonding to above-mentioned tellite 112 (with reference to Figure 10).
As shown in figure 12, semiconductor substrate 120 has the 1st through hole 127 below extending to above semiconductor substrate 120 on the formation position of counter electrode (septum electrode 121, fixed electrode 122).Below on semiconductor substrate 120, reaching, be formed with respectively by silica (SiO
2) insulating protective film 125,126,138,139 that constitutes.The upside of fixed electrode 122 is fixing by insulating protective film 125.Between fixed electrode 122 and septum electrode 121, be formed with gap (air gap).The periphery of septum electrode 121 is fixed, and the central part of septum electrode 121 separates with structure on every side.The central part relative fixed electrode 122 of septum electrode 121 is removable.In fixed electrode 122, be formed with a plurality of air evacuation aperture 122a.By getting rid of the air from the air gap through air evacuation aperture 122a, thereby septum electrode 19 can vibrate reposefully according to sound press.
On the position of the electrode pad 123 that is connected in electrode pad 123, with septum electrode 121 and fixed electrode 122, semiconductor substrate 120 has the 2nd through hole 134 (a plurality of).In the 2nd through hole 134, imbed electric conductor (for example copper etc.).Like this, form the top and following through electrode 128 that is communicated with semiconductor substrate.Below semiconductor substrate 120, be formed with the distribution 129 of the solder ball 124 that is electrically connected each through electrode 128 and correspondence.
As shown in figure 13, the side of through electrode 128 covers with metal screen layer 130 and insulating protective film 131.Metal screen layer 130 is for example formed by titanium (Ti), titanium nitride (TiN), tantalum (Ta) or tantalum nitride (TaN).Insulating protective film 131 is formed by silica.Isolate through electrode 128 and semiconductor substrate 120 by metal screen layer 130 and insulating protective film 131.
Counter electrode (septum electrode 121, fixed electrode 122) in that the upside of semiconductor substrate 120 forms is electrically connected on the following solder ball 124 that is formed on semiconductor substrate 120 by through electrode 128.Owing to do not need to be electrically connected the wire-bonded of the distribution of counter electrode and printed wiring board 112 (with reference to Figure 10), increase, make discomfort bad and that production cost increases so can eliminate erection space, improve the productivity ratio of semiconductor sensor chip 110 because of ultrasonic vibration produces.
When on semiconductor substrate 120, forming the 1st through hole 127 and the 2nd through hole 134 simultaneously, following problem is arranged.That is be the form of hollow is optionally imbedded electric conductor in the 2nd through hole 134 operational difficulty, with the 1st through hole 127.In usual way, exist not only in the 2nd through hole 134, but also in the 1st through hole 127, imbed the anxiety of electric conductor.In order to eliminate this problem, can individually carry out semiconductor substrate 120 is formed the 1st through hole 127 and through hole electrode 138.For example, if form the 2nd through hole 134 with etching, the 2nd through hole 134 imbedded electric conductor after, if form the 1st through hole 127, then can avoid electric conductor to imbed situation in the 1st through hole 127 with etching.But the quantity of etching work procedure increases, and is improper.
In the 4th execution mode, use the spy and open disclosed semi-additive process (semiadditive) in the 2000-124217 communique, carry out semiconductor substrate 120 is formed the 1st through hole 127 and through electrode 128.Semi-additive process is described.Semi-additive process is by following order (A)～(E), optionally forms the technology of electrodeposited coating on the position of the necessity on substrate, generally uses in the back operation of printed base plate or semiconductor device.In the 4th execution mode, the protective layer that uses in following order (B) below semiconductor substrate 120, covers the part of the 1st through hole 127, at the part opening of the 2nd through hole 134.
(A) on substrate surface, form the conductive film (electroplating base film) that works as electroplated electrode.
(B) based on the patterning that uses photoetching technique etc., optionally form electro-cladding to the position that does not need to electroplate.
(C) in electroplate liquid, soak the electroplating processes that reaches the substrate surface of electroplating base film energising.On the substrate surface at this moment, electro-cladding is not set, only on the extending part of basilar memebrane, optionally separates out plated metal.
(D) peel off electro-cladding.
(E) based on being the etching of mask with the electroplated metal layer (electrodeposited coating) of being separated out, removing is not needing the remaining electroplating base film of plated portions (deep etch).
Below, the manufacturing sequence of semiconductor sensor chip 110 of the 4th execution mode of the formation that comprises the through electrode 128 of having used semi-additive process is described.Semiconductor sensor chip 110 after forming a plurality of chips simultaneously on the silicon wafer, cuts off and is single chip.The manufacturing of semiconductor sensor chip 110 is undertaken by the order of following operation 1～operation 12.
The formation of (operation 1) MEMS structure
On silicon wafer 132 (semiconductor substrate 120), form the MEMS structure.Before this, form silica (SiO through oxidation processes in the top and bottom of silicon wafer 132
2) insulating protective film 125,126.
The formation of MEMS structure is undertaken by general semiconductor technology.That is,,, shown in Fig. 4 A, form septum electrode 121, fixed electrode 122, electrode pad 123 and be electrically connected these distribution by on semiconductor substrate 120, stacking gradually the structure of various necessity according to the patterning that uses photoetching process etc.In this stage, the air gap between septum electrode 121 and fixed electrode 122, and air evacuation aperture 122a in residual sacrifice layer 133 arranged.Upside at silicon wafer 132 forms insulating protective film 38, so that cover the MEMS structure.
The etching of (operation 2) the 1st through hole and the 2nd through hole
As shown in figure 14, begin to carry out etching, form the 1st through hole 127 and the 2nd through hole 134 above below silicon wafer 132, penetrating into simultaneously from the downside of silicon wafer 132 (semiconductor substrate 120).The 1st through hole 127 forms on the formation position of septum electrode 121.The 2nd through hole 134 forms on the position of electrode pad 123.
The formation of (operation 3) insulating protective film
Below silicon wafer 132, shown in Figure 14 C, film forming silica (SiO
2) insulating protective film 131.Insulating protective film 131 also covers the side of the 1st through hole 127 and the 2nd through hole 134.
The bottom etching (bottom etch) of (operation 4) insulating protective film
Shown in Figure 14 D, implement bottom etching at the downside of silicon wafer 132, remove unwanted insulating protective film 131.Thus, insulating protective film 131 only remains in the side of the 1st through hole 127 and the 2nd through hole 134.
By following operation 5～8, use the formation of the through electrode 128 of semi-additive process.
The base treatment that (operation 5) electroplates
Below silicon wafer 132, be used to carry out copper-plated base treatment.Be specially, shown in Figure 14 E, the formation electroplating base film 136 of metal screen layer 130 (with reference to Figure 13), plating catalyst (Pb) layer and the substrate copper plate formed by titanium nitride (TiN) that superposeed in order below silicon wafer 132 whole.
The formation of (operation 6) electro-cladding
Shown in Figure 14 F, the electro-cladding 137 of formation electrical insulator below silicon wafer 132.Electro-cladding 137 is patterned by photoetching technique, only optionally forms at the position that does not need to electroplate.Be specially electro-cladding 137, formation below the silicon wafer 132 of the part of having removed the distribution 129 (with reference to Figure 12) that forms the part that is electrically connected the 2nd through hole 134 and through electrode 128 and solder ball 124.The part of the 1st through hole 127 is covered by protective layer 137, and the part of the 2nd through hole 134 be can't help protective layer 137 and covered.
(operation 7) electroplating processes
Downside at silicon wafer 132 carries out copper facing.Copper facing by with silicon wafer 132 immersion plating liquid, is that electrifying electrodes is carried out with electroplating base film 136.Copper is not only covered, has exposed on the surface of electroplating base film 136 by electro-cladding 137 and optionally separates out.Like this, shown in Figure 14 G, only on the formation position of the inside of the 2nd through hole 134 and the distribution 129 (with reference to Figure 12) below the silicon wafer 132, optionally form conductor layer 140.
The peeling off of (operation 8) electro-cladding, deep etch
Peel off the electro-cladding 137 that remains in below the silicon wafer 132, remove electroplating base film 136.Peeling off of electro-cladding 137 comprises silicon wafer 132 is immersed in the stripper.Removing of electroplating base film 136 comprises that with copper plate 140 be mask, utilizes for example wet corrosion such as ferric chloride solution.
As mentioned above, in silicon wafer 132, shown in Figure 14 H, form through electrode 128 and the distribution 129 formed by copper.In 4th execution mode, carry out operation 9～operation 12 thereafter.
(operation 9) forms insulating protective film
Shown in Figure 14 I, below silicon wafer 132, form the insulating protective film of forming by the silica that covers through electrode 128 and distribution 129 139 at least.Before insulating protective film 139 forms, the formation position of shielding solder ball 124.
Removing of (operation 10) sacrifice layer
Shown in Figure 14 J, will be formed on the sacrifice layer 133 of the inside of air gap between septum electrode 121 and the fixed electrode 122 and air evacuation aperture 122a, begin to remove from the upside of silicon wafer 132 by etching.Thus, form the space in the inside of MEMS structure.
The formation of (operation 11) solder ball
Shown in Figure 14 K, formation solder ball 124 below silicon wafer 132.As mentioned above, all constitute the structure of each semiconductor sensor chip 110, form on silicon wafer 132.
(operation 12) cutting
Carry out the cutting off of silicon wafer 132 of each semiconductor sensor chip 110.
, at tellite 112 (with reference to Figure 10) go up to form semiconductor sensor chip 110, by being accommodated in the package module 111 (equally with reference to Figure 10), thereby finish semiconductor loudspeaker module thereafter.
According to the 4th execution mode, can obtain following advantage.
(1) in semiconductor sensor chip 110, the counter electrode (septum electrode 121, fixed electrode 122) in that the upside of semiconductor substrate 120 forms is electrically connected on the solder ball 124 that forms below semiconductor substrate 120 by through electrode 128.Therefore, counter electrode is directly electrically connected on the distribution of tellite 112.Owing to do not need wire-bonded, so can eliminate the bad generation of manufacturing that erection space increases, causes because of ultrasonic vibration and the discomfort of production cost increase.
(2) the 1st through holes 127 and the 2nd through hole 134 form with etching method simultaneously.Thus, can cut down the etching work procedure number.
(3) use semi-additive process the 2nd through hole 134 is imbedded electric conductor (copper).Therefore, can in the 1st through hole 127, electric conductor (copper) optionally be embedded to the 2nd through hole 134 under the state of hollow.
With and the 4th execution mode between difference be the center, the manufacture method of the semiconductor transducer of the present invention's the 5th execution mode is described.
In the 5th execution mode, the 1st through hole 127 and the 2nd through hole 134 are formed by the downside and the upside etching simultaneously of semiconductor substrate 120 respectively.The 1st through hole 127 and the 2nd through hole 134 are at semiconductor substrate 120 mutual different face openings.Carry out imbedding of electric conductor by upside, thereby can in the 1st through hole 127, electric conductor only be embedded to the 2nd through hole 134 under the state of hollow from semiconductor substrate 120.
The formation of (operation 1) MEMS structure
Identical with the 4th execution mode, shown in Figure 15 A, on silicon wafer 132 (semiconductor substrate 120), form the MEMS structure.
The etching of (operation 2) the 1st through hole and the 2nd through hole
Form the 1st through hole 127 and the 2nd through hole 134 simultaneously with etching method.At the same time before the etching,, on the formation position of the formation position of the 2nd through hole 134 (through electrode 128) and the 1st through hole 127, form mask respectively with opening at the upside and the downside of silicon wafer 132.In this etching, can use dry corrosion or wet corrosion.Under the situation of dry corrosion, by using (batch) in batches that handle a plurality of wafers simultaneously to handle, shown in Figure 15 B, thus can be to the downside of the 1st through hole 127 from silicon wafer 132, to the upside of the 2nd through hole 134, carry out anisotropic etching respectively from silicon wafer 132.Under the situation of wet corrosion, in the etching solution that silicon wafer 132 is immersed in alkali system, can to the upside of the 2nd through hole 134, carry out anisotropic etching respectively to the downside of the 1st through hole 127 from silicon wafer 132 from silicon wafer 134.Like this, the 1st through hole 127 openings are at the downside of silicon wafer 132, and its upside is closed by the MEMS structure.The 2nd through hole 134 openings are at the upside of silicon wafer 132, and its downside is closed by the insulating protective film 126 of silica.
In the 5th execution mode, be formed on the position different with electrode pad 123 for ease of upside etching the 2nd through hole 134, the 2 through holes 134 (through electrode 128) from silicon wafer 132.
The formation of (operation 3) insulating protective film
Shown in Figure 15 C, form silica (SiO in the side of the 2nd through hole 134
2) insulating protective film 131.Be specially, after the upside of silicon wafer 132 forms silicon oxide insulation diaphragm 131, carry out bottom etching.Thus, only stay insulating protective film 131 in the side of the 2nd through hole 134.
(operation 4) opening above the electrode pad
Shown in Figure 15 D, remove insulating protective film 38 above the electrode pad 123 with etching method, expose electrode pad 123.This processing is carried out for the distribution that forms electrical connection and be formed on different locational electrode pads 123 and through electrode 128 (the 2nd through hole 134) as mentioned above.
(operation 5) electroplated substrates is handled
At the upside of silicon wafer 132, be used to carry out copper-plated base treatment.Be specially, form the metal screen layer of forming by titanium nitride (TiN) etc. at the upside of silicon wafer 132.Plating kind (seed) layer of copper is imbedded the surface of metal screen layer with sputtering method.Shown in Figure 15 E, at the upside formation electroplating base film 136 of silicon wafer 132.Electroplating base film 136 covers the side of the 2nd through hole 134, and does not cover the side of the 1st through hole 127.
(operation 6) electroplating processes
Upside at silicon wafer 132 carries out copper facing.Copper facing by the upside immersion plating liquid with silicon wafer 132, is switched on as electroplated electrode with electroplating base film 136 and to be carried out.Like this, shown in Figure 15 F,, form copper plate 141 at the inside of the 2nd through hole 134 and the upside of silicon wafer 132.
The etching of (operation 7) electrodeposited coating
Do not need part by what etching method was removed copper plate.Like this, copper plate 141 is shown in Figure 15 G, and is in the inside of the 2nd through hole 134, and above the silicon wafer 132, only residual in the part of the distribution 142 that connects through electrode 128 and electrode pad 123.
(operation 8) forms insulating protective film
Shown in Figure 15 H,, form at least by the insulating protective film 143 that covers through electrode 128 and 142 the silica of going between is formed at the upside of silicon wafer 132.
Removing of (operation 9) sacrifice layer
Shown in Figure 15 I, will be formed on air gap between septum electrode 121 and the fixed electrode 122 and the sacrifice layer 133 among the air evacuation aperture 122a, remove by etching from the upside of silicon wafer 132.Thus, form the space in the inside of MEMS structure.
The etching of (operation 10) insulating protective film
Shown in Figure 15 J, remove the insulating protective film 126 that forms silicon wafer 132 downsides in the position of through electrode 128 by etching.
The formation of (operation 11) projection (bump)
Shown in Figure 15 K, on the position of having removed insulating protective film 126 below silicon wafer 132, form projection 144.This projection 144 when going up formation semiconductor sensor chip 110 at tellite 112 (with reference to Figure 10), is electrically connected distribution and through electrode 128 on the tellite 112.
(operation 12) cutting
Cut off semiconductor sensor chip 110 from silicon wafer 132.Like this, the semiconductor sensor chip 110 of manufacturing shown in Figure 15 L.
According to the 5th execution mode, on the basis of the advantage of (1) of the 4th execution mode and (2), the advantage that can further be achieved as follows.
(4) in the 5th execution mode, when etching forms the 1st through hole 127 and the 2nd through hole 134 at the same time, can be to the 1st through hole 127, from the downside of silicon wafer 132,, carry out etching from the upside of silicon wafer 132 to the 2nd through hole 134.Like this, make the 1st through hole 127 and the 2nd through hole 134 at the different face opening of silicon wafer 132.Therefore, though etching simultaneously forms the 1st through hole 127 and the 2nd through hole 134, but upside by the silicon wafer 132 of remaining silent by the 2nd through hole 134 openings and the 1st through hole 127, carry out imbed (plating) of electric conductor (copper), can in the 1st through hole 127, electric conductor only be embedded to the 2nd through hole 134 easily and definitely under the state of hollow.
The the 4th and the 5th execution mode can be implemented in following change.
The details of the processing mode of each operation in the 4th and the 5th execution mode as required, also can suitably change.Or change the order of each operation, also can omit a wherein part.
The manufacture method of the 4th and the 5th execution mode can be applicable to have the manufacturing of such MEMS structure of the 2nd execution mode and transducer control with the integrated chip 30 of integrated circuit.
The present invention for example also can be applicable to, and other electrostatic capacitance such as pressure sensor or acceleration transducer detects the N-type semiconductor N transducer.And, be not limited to the semiconductor transducer of electrostatic capacitance detection type, also applicable to semiconductor transducer with barrier film.
At this, only put down in writing several embodiments of the present invention, and the present invention can other distinctive mode specialize also in the scope that does not break away from its meaning, this point is understandable to one skilled in the art.
Claims (20)
1, a kind of semiconductor transducer (15; 30; 40; 50), wherein possess:
Have the 1st, reach and above-mentioned the 1st the 2nd opposite semiconductor substrate (18);
Be located at the barrier film (19) on above-mentioned the 1st of above-mentioned semiconductor substrate; With
Connect the through electrode (26) of above-mentioned semiconductor substrate.
2, semiconductor transducer according to claim 1, wherein,
Use simultaneously with the tellite with distribution (11), above-mentioned the 2nd side at above-mentioned semiconductor substrate is connected with above-mentioned tellite (11), when above-mentioned semiconductor substrate was connected with above-mentioned tellite, above-mentioned through electrode (26) was connected with the above-mentioned wired electric of above-mentioned tellite.
3, semiconductor transducer according to claim 1, wherein,
Also possess be located at above-mentioned semiconductor substrate above-mentioned the 1st go up and with the fixed electrode (20) of above-mentioned barrier film subtend,
Said fixing electrode and above-mentioned barrier film form capacitor,
Above-mentioned semiconductor transducer is that the electrostatic capacitance of the pairing detection signal of distance between output said fixing electrode and the above-mentioned barrier film detects the N-type semiconductor N transducer.
4, semiconductor transducer according to claim 3, wherein,
Above-mentioned barrier film vibrates according to sound press,
The vibration of above-mentioned barrier film makes the electrostatic capacitance change of above-mentioned capacitor corresponding to above-mentioned distance,
Above-mentioned semiconductor transducer is the sound transducer of output corresponding to the detection signal of above-mentioned electrostatic capacitance change.
5, semiconductor transducer according to claim 1, wherein,
Above-mentioned barrier film is to be arranged at one of them of a plurality of barrier films that barrier film comprised on the above-mentioned semiconductor substrate.
6, semiconductor transducer according to claim 1, wherein,
Also possess above-mentioned the 1st the control integrated circuit (32) of going up and control this semiconductor transducer that is formed on above-mentioned semiconductor substrate.
7, semiconductor transducer according to claim 1, wherein,
Also possess above-mentioned the 2nd the control integrated circuit (42) of going up and control this semiconductor transducer that is formed on above-mentioned semiconductor substrate.
8, semiconductor transducer according to claim 1, wherein,
Above-mentioned semiconductor substrate has connection above-mentioned the 1st and above-mentioned the 2nd the 1st hole (22),
Above-mentioned hole is at the 1st above-mentioned the 1st position opening,
Above-mentioned barrier film is arranged on above-mentioned the 1st above-mentioned the 1st position of above-mentioned semiconductor substrate.
9, semiconductor transducer according to claim 8, wherein,
Above-mentioned semiconductor substrate has connection above-mentioned the 1st and the 2nd above-mentioned the 2nd hole on the 2nd position different with above-mentioned the 1st position,
Above-mentioned through electrode comprises the electric conductor that is filled in above-mentioned the 2nd hole.
10, a kind of package module (10 of semiconductor transducer; 33; 43), wherein possess:
Tellite (11);
Be installed on the above-mentioned tellite, assist with above-mentioned tellite and move the lid (12) of distinguishing the inner space;
Be configured in the above-mentioned inner space, and be bonded in semiconductor transducer (15 on the above-mentioned tellite; 30; 40; 50);
Above-mentioned semiconductor transducer comprises:
Semiconductor substrate (18), it has: the 1st, with above-mentioned the 1st opposite the 2nd, and be communicated with above-mentioned the 1st and above-mentioned the 2nd the 1st hole (22) in the 1st position and be communicated with above-mentioned the 1st and above-mentioned the 2nd the 2nd hole (electrode hole) in the 2nd position;
On above-mentioned the 1st of above-mentioned semiconductor substrate, be arranged on the above-mentioned the 1st locational fixed electrode (20);
On above-mentioned the 1st above-mentioned the 1st position of above-mentioned semiconductor substrate, reserve the air gap and with the movably septum electrode (19) on said fixing electrode opposite; With
Imbed in above-mentioned the 2nd hole, be communicated with above-mentioned the 1st and above-mentioned the 2nd through electrode (26) of above-mentioned semiconductor substrate.
11, semiconductor transducer package module according to claim 10, wherein,
Said fixing electrode (20) has a plurality of holes (25) towards above-mentioned septum electrode opening.
12, semiconductor transducer package module according to claim 10, wherein,
Above-mentioned the 2nd side and the above-mentioned tellite (11) of above-mentioned semiconductor substrate are bonding,
When above-mentioned semiconductor substrate and above-mentioned tellite were bonding, above-mentioned through electrode (26) was connected with the above-mentioned wired electric of above-mentioned tellite.
13, semiconductor transducer package module according to claim 10, wherein,
Said fixing electrode and above-mentioned barrier film form capacitor,
Above-mentioned semiconductor transducer output detects the N-type semiconductor N transducer corresponding to the electrostatic capacitance of distance detection signal between said fixing electrode and the above-mentioned barrier film.
14, semiconductor transducer package module according to claim 13, wherein,
Above-mentioned barrier film vibrates according to sound press, and makes the electrostatic capacitance change of above-mentioned capacitor according to the variation of above-mentioned distance,
Above-mentioned semiconductor transducer is the sound transducer of output corresponding to the detection signal of above-mentioned electrostatic capacitance change.
15, semiconductor transducer package module according to claim 10, wherein,
Above-mentioned barrier film is to be located at one of them of a plurality of barrier films that barrier film comprised on the above-mentioned semiconductor substrate.
16, semiconductor transducer package module according to claim 10, wherein,
Above-mentioned semiconductor transducer also has: the control integrated circuit (32) that forms and control this semiconductor transducer on above-mentioned the 1st on the above-mentioned semiconductor substrate.
17, semiconductor transducer package module according to claim 10, wherein,
Above-mentioned semiconductor transducer also has: the control integrated circuit (42) that forms and control this semiconductor transducer on above-mentioned the 2nd on the above-mentioned semiconductor substrate.
18, a kind of manufacture method of semiconductor transducer, wherein said semiconductor transducer possesses:
Have the 1st, reach and above-mentioned the 1st the 2nd opposite semiconductor substrate (120);
Be located at the barrier film (121) on above-mentioned the 1st of above-mentioned semiconductor substrate; With
Connect the 1st and above-mentioned the 2nd through electrode (128) of above-mentioned semiconductor substrate;
Said method possesses:
Form the etching work procedure of the 1st hole (127) and the 2nd hole (134) simultaneously, extend between above-mentioned the 1st and above-mentioned the 2nd on the 1st position of the above-mentioned barrier film of the formation of above-mentioned semiconductor substrate (121) in the 1st hole; Extend between above-mentioned the 1st and above-mentioned the 2nd on the 2nd position of the above-mentioned through electrode of the formation of above-mentioned semiconductor substrate (121) in the 2nd hole; With
Electric conductor is imbedded above-mentioned the 2nd hole, to form the operation of above-mentioned through electrode.
19, method according to claim 18, wherein, the operation that forms above-mentioned through electrode comprises:
The operation of the electroplating base film above-mentioned the 2nd, conductivity (136) of the surface in above-mentioned the 1st hole of formation covering, the surface in above-mentioned the 2nd hole and above-mentioned semiconductor substrate;
Form to cover the above-mentioned surface in above-mentioned the 2nd and above-mentioned the 1st hole (127) of above-mentioned semiconductor substrate, but do not cover the operation of the electro-cladding (137) on the above-mentioned surface in above-mentioned the 2nd hole;
Filled conductive body in above-mentioned the 2nd hole to form the operation of above-mentioned through electrode, is wherein filled above-mentioned electric conductor and is comprised above-mentioned semiconductor substrate immersion plating liquid, simultaneously to above-mentioned electroplating base film energising, the above-mentioned surface in above-mentioned the 2nd hole of electroplating processes;
Said method also possesses:
The operation of removing above-mentioned electro-cladding from above-mentioned the 2nd face of above-mentioned semiconductor substrate; With
The operation of removing above-mentioned electroplating base film from above-mentioned the 2nd face of above-mentioned semiconductor substrate.
20, a kind of manufacture method of semiconductor transducer, wherein above-mentioned semiconductor transducer possesses:
Have the 1st, reach and above-mentioned the 1st the 2nd opposite semiconductor substrate (120);
Be located at the barrier film (121) on above-mentioned the 1st of above-mentioned semiconductor substrate; With
Connect above-mentioned the 1st and above-mentioned the 2nd through electrode (128) of above-mentioned semiconductor substrate;
Said method possesses:
Form the etching work procedure of the 1st hole (127) and the 2nd hole (134) simultaneously, wherein the 1st hole is on the 1st position of the above-mentioned barrier film of the formation of above-mentioned semiconductor substrate (121), opening is arranged, arranged the end at above-mentioned the 2nd face at above-mentioned the 1st face, there is opening in the 2nd hole, at above-mentioned the 2nd face is arranged the end at above-mentioned the 1st face on the 2nd position of the above-mentioned through electrode of the formation of above-mentioned semiconductor substrate (121); With
From above-mentioned semiconductor substrate above-mentioned the 1st imbeds electric conductor in the above-mentioned opening in above-mentioned the 2nd hole, to form the operation of above-mentioned through electrode.
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| JP2005022739 | 2005-01-31 | ||
| JP2005022739A JP2006211468A (en) | 2005-01-31 | 2005-01-31 | Semiconductor sensor |
| JP2005051871 | 2005-02-25 |
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| CN1822722A true CN1822722A (en) | 2006-08-23 |
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| CN 200610006986 Pending CN1822722A (en) | 2005-01-31 | 2006-01-26 | Semiconductor sensor |
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| CN (1) | CN1822722A (en) |
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