CN1637568B - 面内切换型液晶显示器件及其制造方法 - Google Patents

面内切换型液晶显示器件及其制造方法 Download PDF

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CN1637568B
CN1637568B CN200410011529XA CN200410011529A CN1637568B CN 1637568 B CN1637568 B CN 1637568B CN 200410011529X A CN200410011529X A CN 200410011529XA CN 200410011529 A CN200410011529 A CN 200410011529A CN 1637568 B CN1637568 B CN 1637568B
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崔秀石
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Abstract

面内切换型液晶显示器件及其制造方法。面内切换型液晶显示器件包括：位于第一基板上的第一铁电液晶层；位于第二基板上的第二铁电液晶层，第一基本和第二基板彼此接合在一起，其间留有间隔；以及位于第一铁电液晶层和第二铁电液晶层之间的间隔中的向列液晶层，第一铁电液晶层和第二铁电液晶层包括光聚合单体。

Description

面内切换型液晶显示器件及其制造方法
技术领域
本发明涉及一种显示器件，更具体的，涉及一种使用铁电液晶材料的面内切换型液晶显示器件及其制造方法。
背景技术
通常，液晶显示(LCD)器件对施加到液晶单元的电场进行控制。受控的电场调节入射到液晶单元的光，从而显示图像。液晶显示器件可以采用垂直电场方法和水平电场方法驱动液晶单元。
在垂直电场方法中，在上基板和下基板上分别形成像素电极和公共电极。由此，像素电极和公共电极彼此垂直相对，并且通过在像素电极和公共电极之间施加电压差，来产生垂直穿过液晶单元的电场。例如，扭曲向列(TN)型LCD器件通常使用垂直电场方法。扭曲向列型LCD器件具有较宽的孔径比。但是，由于液晶分子具有不同的折射率，所以显示的图像随着观察者视角的变化而变化。因此，存在难以实现宽视角的缺点。
此外，面内切换(IPS)型LCD器件通常使用水平电场方法。在水平电场方法中，在形成在同一个基板上的电极之间产生电场来驱动液晶单元。
图1是根据现有技术的面内切换型液晶显示器件的示意剖面图。在图1中，液晶显示器件包括上玻璃基板12和下玻璃基板18，在两者之间形成具有液晶分子14的液晶层。分别在上基板12的上表面和下表面上形成偏振膜11和配向层13。另外，分别在下基板18的上表面和下表面上形成配向膜17和偏振膜19。特别是，偏振膜11和18的轴彼此交叉。
此外，在下基板18上的配向膜17上形成公共电极15和像素电极16。具体地，通过施加在公共电极15和像素电极16之间的电压差，沿水平方向产生电场20。结果，液晶分子14被电场20旋转，从而调节透过液晶层的光的偏振分量。例如，如果透过液晶层的光的偏振分量改变90度，则光穿过上偏振膜11。另一方面，如果光的偏振分量不改变，则光不能穿过上偏振膜11。
由于液晶分子14的折射率变化不大，所以根据现有技术的IPS型液晶显示器件具有较宽的视角。但是，对液晶分子14施加电场是由下基板18上的不透明的公共电极15和像素电极16来实现的。具体地，由于不在公共电极15和像素电极16上进行光开关，所以施加到液晶分子14的电场是弯曲的。因此，现有技术的IPS型液晶显示器件存在孔径比低的缺点。
发明内容
因此，本发明意在提供一种基本消除由于现有技术的局限和缺点引起的一个或多个问题的面内切换型的液晶显示器件及其制造方法。
本发明的一个目的是提供一种能够实现宽视角而不降低孔径比的面内切换型的液晶显示器件及其制造方法。
本发明的其它特征和优点将在下面的说明书中阐明，部分地将在该说明书中变得显而易见，或者通过实施本发明来领会。通过在书面说明书及其权利要求书以及附图所具体指出的结构，将实现和获得本发明的目的和其它优点。
为了实现这些和其它优点并根据本发明的目的，如本文所示例和广义描述的，面内切换型液晶显示器件包括：位于第一基板上的第一铁电液晶层；位于第二基板上的第二铁电液晶层，第一基板和第二基板彼此接合在一起，并在其间留有间隔；以及位于第一铁电液晶层和第二铁电液晶层之间的间隔中的向列液晶层，第一铁电液晶层和第二铁电液晶层包括光聚合单体(photo-polymerizational monomer)，并且该面内切换型液晶显示器件还包括：位于所述第一基板上的第一电极；以及位于所述第二基板上的第二电极，所述第一电极和第二电极产生垂直穿过所述第一铁电液晶层和所述第二铁电液晶层以及所述向列液晶层的电场。
在另一方面，制造面内切换型液晶显示器件的方法包括：在第一基板上形成第一铁电液晶层；在第二基板上形成第二铁电液晶层，第一铁电液晶层和第二铁电液晶层包括光聚合单体；彼此接合第一基板和第二基板，且其间留有间隔；然后在第一铁电液晶层和第二铁电液晶层之间的间隔中形成向列液晶层，并且，该方法还包括：在所述第一基板上形成第一电极；以及在所述第二基板上形成第二电极，所述第一电极和所述第二电极产生垂直穿过所述第一铁电液晶层和所述第二铁电液晶层以及所述向列液晶层的电场。
应当理解，上述一般说明和下面的详细说明是示例性和解释性的，意在为所要求的发明提供进一步的说明。
附图说明
为了进一步理解本发明而提供了附图，附图说明了本发明的实施例，其被引入说明书，构成了说明书的一部分并且与说明书一起说明本发明的原理。
图1是根据现有技术的面内切换型液晶显示器件的示意剖面图；
图2A到2D是根据本发明的实施例的制造液晶显示器的方法的示意剖面图；以及
图3示出了在根据本发明的实施例的液晶显示器中铁电液晶和向列液晶的运动的示意立体图。
具体实施方式
现在详细说明优选实施例，在附图中示出了优选实施例的示例。
图2A到2D示出了根据本发明的实施例的制造液晶显示器的方法的示意剖面图。在图2A中，在上基板21上形成上电极22和上配向膜23。另外，在下基板31上形成下电极32和下配向膜33。上基板21和下基板31可以由透明玻璃材料形成。上电极22和下电极32可以由透明导电材料(例如氧化铟锡(ITO))形成。
此外，上配向膜23和下配向膜33可以由有机材料(例如聚酰亚胺)形成。可以摩擦上配向膜23和下配向膜33来设置随后在它们之间形成的铁电液晶分子24和34(如图2B所示)的预倾斜角。在下基板31的光入射平面上和上基板21的光出射(light out-coming)平面上形成与透光轴交叉的偏振膜(未示出)。
如图2B所示，在形成铁电液晶分子24和34的手性近晶C*相(chiralsmectic C*phase)期间，将少量光聚合单体25和35加入到铁电液晶分子24和34中。例如，铁电液晶分子24和34与光聚合单体25和35具有如下表1所示的构成比。
表1
  铁电液晶   95wt％～99wt％(重量比)
  光聚合单体   1wt％～5wt％
另外，铁电液晶分子24和34可以包括任何已知的铁电液晶材料，光聚合单体25和35可以包括任何已知的向列光聚合单体。具体地，光聚合单体25和35可以分别与铁电液晶分子24和34均匀地混合，然后，混合物分别均匀地涂在配向膜23和33上。可以在向列系统中形成铁电液晶分子24和34。
此外，铁电液晶分子24和34与光聚合单体25和35的混合物可以暴露于电负性较高的介质中。另选地，可以向铁电液晶分子24和34与光聚合单体25和35的混合物施加电场或磁场。由此，如图2B中的箭头所示，铁电液晶分子24和34可以沿自发偏振方向配向。例如，该混合物可以暴露于作为高极性介质的水(H2O)或氧(O2)的气氛中。
当暴露于高极性的介质中时，由于转变温度，铁电液晶分子24和34从各向同性相变为近晶A相、手性近晶C*相和手性向列N*相。另外，铁电液晶分子24和34的自发偏振朝向介质。相反，当暴露于低极性的介质(例如氮(N2)或空气)中时，铁电液晶分子24和34的自发偏振朝向介质的相反方向。因此，进行温度处理，以使相从近晶A相或手性向列N*相转变为手性近晶C*相。
此外，当在转变温度下对铁电液晶分子24和34施加电场或磁场时，铁电液晶分子24和34从各向同性相变为近晶A相、手性近晶C*相和手性向列N*相。铁电液晶分子24和34的自发偏振平行于电场或磁场排列。
结果，通过将混合物暴露在具有电极性的介质中或通过对混合物施加电场或磁场，在上基板21上形成的铁电液晶分子24具有朝向上基板21的相反方向的自发偏振方向，在下基板31上形成的铁电液晶分子34具有朝向下基板31的自发偏振方向。
如图2C所示，通过对混合物进行紫外线(未示出)照射来引起光聚合单体25和35的光聚合。具体地，光聚合单体25和35可以具有通过光聚合产生的桥键(bridge bond)以形成光聚合体网。结果，铁电液晶分子24和34具有保持一致的自发偏振方向，并且它们的初始配向稳定。
具体地，在基板21和31上形成聚合体稳定的FLC(PSFLC)配向膜，从而能够稳定配向状态。此外，由于加入了少量光聚合单体25和35，所以铁电液晶分子24和34的桥键的范围允许铁电液晶分子24和34旋转。
如图2D所示，在上下基板21和31的外围用密封剂(未示出)以预定的单元间隙将上下基板21和31彼此面对地接合。此外，在上下基板21和31之间的单元间隙中形成向列型液晶材料30。具体地，含有铁电液晶分子24和34的铁电液晶层不与向列型液晶材料30混合。因此，在向列型液晶材料30与铁电液晶材料层之间的接触面上形成相分离。向列型液晶材料30可以是正型或负型液晶材料。
图3是示出了在根据本发明的实施例的液晶显示器中铁电液晶和向列液晶的运动的示意立体图。如图3所示，当对上下电极22和32施加电压差时(如图2D所示)，面内驱动向列型液晶材料30，从而调节从中穿过的光。
另外，面内驱动沿虚圆锥体旋转的铁电液晶分子34，并引起与其相邻的向列型液晶材料30的面内驱动。具体地，当将电场施加到铁电液晶分子34上时，铁电液晶分子34具有永久的偏振，即，自发偏振。因此，电场与自发偏振的相互作用类似于磁体的相互作用，使铁电液晶分子34快速旋转。
结果，通过使用垂直电场方法施加电场，液晶显示器件孔径比的减小最小化，并通过向列型液晶材料30的面内驱动来实现宽视角。此外，铁电液晶分子34使向列型液晶材料30快速旋转。因此，改善了向列型液晶材料30的响应速度。
如上所述，根据本发明的实施例的面内切换型液晶显示器件及其制造方法在上下基板的每一个中的配向膜上形成铁电液晶层，并在铁电液晶层之间形成向列液晶层。液晶显示器件采用垂直电场方法向铁电液晶层和向列液晶层施加电场。结果，根据本发明的实施例的面内切换型液晶显示器件及其制造方法通过铁电液晶层的感应，来面内驱动向列液晶层的液晶分子。由此，增加了孔径比并实现了宽视角。
此外，根据本发明的实施例的面内切换型液晶显示器件及其制造方法包括在铁电液晶层中引起光聚合。由此，铁电液晶层具有保持一致的自发偏振方向，并且它们的初始配向稳定。
显然，本领域的技术人员可以不脱离本发明的精神或范围对本发明的面内切换型液晶显示器件及其制造方法进行各种修改和变型。因此，如果本发明的这些修改和变型落入了所附权利要求书及其等同物的范围，则本发明就覆盖它们。
本发明要求2003年12月29日在韩国提交的韩国专利申请No.P2003-99336的优先权，通过引用合并在本文中。

Claims (18)

1.一种面内切换型液晶显示器件，该器件包括：
位于第一基板上的第一铁电液晶层；
位于第二基板上的第二铁电液晶层，所述第一基板和所述第二基板彼此接合在一起，并且其间留有间隔；以及
向列液晶层，其位于所述第一铁电液晶层和第二铁电液晶层之间的间隔中，所述第一铁电液晶层和第二铁电液晶层包含光聚合单体，并且
该器件还包括：
位于所述第一基板上的第一电极；以及
位于所述第二基板上的第二电极，所述第一电极和第二电极产生垂直穿过所述第一铁电液晶层和所述第二铁电液晶层以及所述向列液晶层的电场。
2.根据权利要求1的器件，其中所述第一铁电液晶层和所述第二铁电液晶层的每一个中的光聚合单体为1wt％～5wt％。
3.根据权利要求1的器件，其中所述第一电极和所述第二电极为透明电极。
4.根据权利要求1的器件，其中通过所述第一铁电液晶层和所述第二铁电液晶层基本在面内驱动所述向列液晶层。
5.根据权利要求1的器件，该器件还包括：
位于所述第一电极和所述第一铁电液晶层之间的第一配向膜；以及
位于所述第二电极和所述第二铁电液晶层之间的第二配向膜。
6.根据权利要求1的器件，其中所述第一铁电液晶层和所述第二铁电液晶层的液晶分子交联键合。
7.根据权利要求1的器件，其中所述第一铁电液晶层和第二铁电液晶层包括从各向同性相到手性近晶C*相的相变。
8.根据权利要求7的器件，其中相变包括在各向同性相与手性近晶C*相之间的手性近晶A相。
9.根据权利要求7的器件，其中相变包括在各向同性相与手性近晶C*相之间的手性向列N*相。
10.一种制造面内切换型液晶显示器件的方法，该方法包括：
在第一基板上形成第一铁电液晶层；
在第二基板上形成第二铁电液晶层，所述第一铁电液晶层和第二铁电液晶层包括光聚合单体；
将第一基板和第二基板彼此接合，其间留有间隔；以及
在所述第一铁电液晶层和所述第二铁电液晶层之间的所述间隔中形成向列液晶层，并且
该方法还包括：
在所述第一基板上形成第一电极；以及
在所述第二基板上形成第二电极，所述第一电极和所述第二电极产生垂直穿过所述第一铁电液晶层和所述第二铁电液晶层以及所述向列液晶层的电场。
11.根据权利要求10的方法，其中所述第一铁电液晶层和所述第二铁电液晶层的形成包括：
将光聚合单体与铁电液晶材料混合，光聚合单体为1wt％～5wt％，铁电液晶材料为95wt％～99wt％。
12.根据权利要求11的方法，其中所述第一铁电液晶层和所述第二铁电液晶层的形成包括将混合物暴露在光中，以引起混合物的光聚合。
13.根据权利要求10的方法，其中所述第一铁电液晶层和所述第二铁电液晶层的形成包括配向所述第一铁电液晶层和所述第二铁电液晶层的自发偏振方向。
14.根据权利要求13的方法，其中对所述第一铁电液晶层和所述第二铁电液晶层的自发偏振方向的配向包括将所述第一铁电液晶层和所述第二铁电液晶层暴露在两亲介质和两疏介质中的一种中。
15.根据权利要求13的方法，其中对所述第一铁电液晶层和所述第二铁电液晶层的自发偏振方向的配向包括施加电场或磁场。
16.根据权利要求10的方法，其中所述第一铁电液晶层和所述第二铁电液晶层的形成包括温度处理，以引起第一铁电液晶层和第二铁电液晶层的相变。
17.根据权利要求10的方法，其中所述第一电极和所述第二电极由透明导电材料形成。
18.根据权利要求10的方法，该方法还包括：
位于所述第一电极和所述第一铁电液晶层之间的第一配向膜；以及
位于所述第二电极和所述第二铁电液晶层之间的第二配向膜。
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