CN1635616A - 一种制作具有延伸闸极晶体管的方法 - Google Patents
一种制作具有延伸闸极晶体管的方法 Download PDFInfo
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- CN1635616A CN1635616A CN 200310122918 CN200310122918A CN1635616A CN 1635616 A CN1635616 A CN 1635616A CN 200310122918 CN200310122918 CN 200310122918 CN 200310122918 A CN200310122918 A CN 200310122918A CN 1635616 A CN1635616 A CN 1635616A
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- Prior art keywords
- gate
- semiconductor substrate
- insulating barrier
- crystal silicon
- compound crystal
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
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Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2003101229185A CN100376020C (zh) | 2003-12-29 | 2003-12-29 | 一种制作具有延伸闸极晶体管的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2003101229185A CN100376020C (zh) | 2003-12-29 | 2003-12-29 | 一种制作具有延伸闸极晶体管的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1635616A true CN1635616A (zh) | 2005-07-06 |
CN100376020C CN100376020C (zh) | 2008-03-19 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2003101229185A Expired - Fee Related CN100376020C (zh) | 2003-12-29 | 2003-12-29 | 一种制作具有延伸闸极晶体管的方法 |
Country Status (1)
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CN (1) | CN100376020C (zh) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2150746B (en) * | 1983-12-02 | 1988-02-24 | Habib Serag El Din El Sayed | Mos transistor with surface accumulation region |
US4922327A (en) * | 1987-12-24 | 1990-05-01 | University Of Toronto Innovations Foundation | Semiconductor LDMOS device with upper and lower passages |
JP2519608B2 (ja) * | 1990-04-16 | 1996-07-31 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US5517046A (en) * | 1993-11-19 | 1996-05-14 | Micrel, Incorporated | High voltage lateral DMOS device with enhanced drift region |
SE513283C2 (sv) * | 1996-07-26 | 2000-08-14 | Ericsson Telefon Ab L M | MOS-transistorstruktur med utsträckt driftregion |
US6326290B1 (en) * | 2000-03-21 | 2001-12-04 | Taiwan Semiconductor Manufacturing Company | Low resistance self aligned extended gate structure utilizing A T or Y shaped gate structure for high performance deep submicron FET |
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2003
- 2003-12-29 CN CNB2003101229185A patent/CN100376020C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN100376020C (zh) | 2008-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111205 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111205 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080319 Termination date: 20181229 |