CN1635177A - Apparatus for inner surface modification by plasma source ion implantation - Google Patents
Apparatus for inner surface modification by plasma source ion implantation Download PDFInfo
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- CN1635177A CN1635177A CN 200310113092 CN200310113092A CN1635177A CN 1635177 A CN1635177 A CN 1635177A CN 200310113092 CN200310113092 CN 200310113092 CN 200310113092 A CN200310113092 A CN 200310113092A CN 1635177 A CN1635177 A CN 1635177A
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Abstract
The invention relates to a device for inner surface modification by injecting plasma ion source, wherein: setting a tubular work-piece into a processing chamber, laying a columnar electrode and a tubular electrode allowing plasma diffusion in the tubular work-piece from inside to out side coaxially_ contacting the two electrodes with the radio frequency power supply, connecting a negative high tension supply between the tubular electrode and the tubular work-piece, also including a driving device capable of making relative rotation between tubular work-piece and tubular electrode; the tubular electrode is made up of electrode wires on the outer surface of tubular support, the electrode wires are in circumferential uniform distribution or screw-type distribution; the columnar electrode is a hollow tube with magnetic-irons in it; the tubular electrode is an interconnected hollow metal tube. the magnetic-irons are ring, and axially uniformly distributed with homopolarity opposition. The invention intensifies the sputtering of plasma to center electrode material by setting magnetic-irons in the tubular electrode, and improves the processing efficiency of tubular work-piece inner surface.
Description
Technical field
The present invention relates to utilize the plasma source ion implantation technique, the device of the ion implantation modifying inner surface of particularly a kind of plasma source.
Background technology
At present, it is a kind of new material surface ion implantation technique that plasma source injects (PSII), as rolling up (1987) 4591-4596 page or leaf by J.R.Conrad at document J.Appl.Phys. (Applied Physics periodical) the 62nd, J.L.Radtke, R.A.Dodd, " Plasma sourceion-implantation technique for surface modification of materials " literary composition that Frank J.Worzala and Ngoc C.Tran are write is introduced a kind of like this plasma source ion implantation technique.But at this moment the internal surface that directly injects tubular workpiece with the PSII technology still can not be used for handling the internal surface of fineness ratio less than 0.6 pipe fitting.For addressing this problem, (publication number is the applicant: proposed a kind of based on the method for PSII technology to modifying inner surface of tubular workpiece 1382829) in disclosed Chinese invention patent application on December 4th, 2003, thereafter, (application number is the applicant: 030105058.1) made further improvement at the method for a kind of modifying inner surface of tubular workpiece of on March 4th, 2003 application and device thereof, in this method, tubular workpiece is placed Processing Room, and with a columnar electrode and a hollow edged electrode from the inside to the outside coaxial arrangement in tubular workpiece, this two electrode and radio-frequency power supply are connected, thereby in Processing Room, produce an equally distributed vertically stable state radio-frequency plasma, between tubular workpiece and hollow edged electrode, apply negative high voltage again, positive ion is quickened to be injected into inner surface of tubular workpiece; Simultaneously, make between hollow edged electrode and the tubular workpiece to relatively rotate, thereby relatively equably acceleration of ions is injected into inner surface of tubular workpiece.
Summary of the invention
The objective of the invention is to: for the homogeneity that further improves inner surface of tubular workpiece processing reaches the effect of corrosion-resisting wear-proof, and improve the efficient that internal surface is processed, thereby the device of the ion implantation modifying inner surface of a kind of plasma source is provided.
The object of the present invention is achieved like this: the device of the ion implantation modifying inner surface of plasma source provided by the invention, tubular workpiece is placed a Processing Room, and the hollow edged electrode that a columnar electrode and can be allowed plasma diffusion from the inside to the outside coaxial arrangement in this tubular workpiece, this two electrode and radio-frequency power supply are connected, between hollow edged electrode and tubular workpiece, be connected a negative high voltage power source, also comprise a drive unit that tubular workpiece and hollow edged electrode are produced relative rotation; Described hollow edged electrode is made of the wire electrode that is distributed on the cylindric strut member outside surface, and this wire electrode is circumferential uniform distribution, or formula distributes in the shape of a spiral; Also be provided with the device that is used to produce magnetic field in the described Processing Room.
The described device that is used for producing magnetic field is for to place ringshaped magnet at the columnar electrode of hollow, and homopolarity is relatively evenly arranged vertically between magnet and the magnet; Adopt the auxiliary mode of magnetic control to strengthen isoionic sputter to improve the efficient of inner surface of tubular workpiece processing.
The described device that is used to produce magnetic field is that the outer wall at tubular workpiece twines a coil, connects a direct current power supply again at the two ends of coil and makes; Make it to produce along the axial magnetic field of tubular workpiece at tubular workpiece outer most surrounding outer wall winding around, thereby can increase tubular workpiece gas inside ionization level and increase plasma density, also can weaken simultaneously wire electrode shade influence from the teeth outwards, increase the homogeneity and the efficient of modifying inner surface of tubular workpiece.
Because adopted the wire electrode of circumferential uniform distribution or spiral distribution, set drive unit can make tubular workpiece and hollow edged electrode relatively rotate, thereby can make inner surface of tubular workpiece processing evenly.
As a kind of improvement of said apparatus, described hollow edged electrode is the metal tube of the hollow of connection, simultaneously as water-cooling channel.
As another improvement of said apparatus, Processing Room is made of tubular workpiece itself, and columnar electrode and by hollow edged electrode and the coaxial setting of tubular workpiece that wire electrode constitutes like this, can make this device save Processing Room, thereby simplify this device.
As the further improvement of said apparatus, drive unit is adopted no oily motor, drive unit can be placed in the Processing Room, drive unit can also be connected with hollow edged electrode or tubular workpiece certainly.
The invention has the advantages that: the device of the ion implantation modifying inner surface of plasma source of the present invention, adopt the auxiliary mode of magnetic control to strengthen isoionic sputter, simultaneously water-cooling channel is set in hollow edged electrode and adds water cooling, improve the efficient of inner surface of tubular workpiece processing; Hollow edged electrode also by making by the wire electrode of circumferential uniform distribution or spiral distribution, with a drive unit hollow edged electrode and tubular workpiece are relatively rotated, eliminated the wire electrode shade of the inner surface of tubular workpiece that is modified, and coil produces axial magnetic field raising tubular workpiece gas inside ionization level, make that the inner surface of tubular workpiece of modification is more even, to improve inner surface of tubular workpiece corrosion-resisting wear-proof performance.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail:
Fig. 1 is the structural representation of the device of the ion implantation modifying inner surface of plasma source of the present invention
Fig. 2 is the partial schematic diagram of columnar electrode among Fig. 1
Fig. 3 be Fig. 2 columnar electrode side-view
Fig. 4 is another structural representation of the device of the ion implantation modifying inner surface of plasma source of the present invention
The accompanying drawing sign
1, plasma body 2, the negative high voltage pulse power 3,
4, tubular workpiece 5, radio-frequency power supply 6, stopping condenser
7, fine setting needle-valve 8, columnar electrode 9, hollow edged electrode
10, Processing Room 11, vacuum extractor 12, motor
14, argon bottle 15, nitrogengas cylinder 21, magnet
22, coil
Embodiment
The device of the ion implantation modifying inner surface of plasma source of the present invention as shown in Figure 1, comprises that mainly one has the Processing Room 10 of vacuum extractor 11, and Processing Room 10 connects working gas source argon bottle 14 and nitrogengas cylinder 15 by fine setting needle-valve 7; In Processing Room 10, columnar electrode 8, hollow edged electrode 9 and tubular workpiece 4 be coaxial arrangement from inside to outside, columnar electrode 8 places the center of tubular workpiece 4, at columnar electrode 8 and 4 of tubular workpieces a hollow edged electrode 9 that is made of circumferential equally distributed wire electrode is set; Hollow edged electrode 9 is connected with a radio-frequency power supply 5 with columnar electrode 8, wherein, columnar electrode 8 is connected with the power utmost point of radio-frequency power supply 5 by a stopping condenser 6, and hollow edged electrode 9 is connected with ground 3, thereby, radio frequency discharge between hollow edged electrode 9 and the columnar electrode 8 produces an equally distributed vertically plasma body 1; In addition, the negative pole of negative high voltage power source 2 is connected with tubular workpiece 4, the plus earth of negative high voltage 2, thereby positive ion is quickened to be injected into the internal surface of tubular workpiece 4, when between tubular workpiece 4 and hollow edged electrode 9, applying negative high voltage, drive hollow edged electrode 9 or tubular workpiece 4 with motor 12, make between hollow edged electrode 9 and the tubular workpiece 4 to relatively rotate.Be that tubular workpiece 4 is static shown in Fig. 1, motor 12 drives hollow edged electrode 9 and rotates; But also can be that hollow edged electrode 9 does not rotate, rotate and drive tubular workpiece 4 by motor 12.
Fig. 2 and shown in Figure 3 be the partial schematic diagram and the side-view of columnar electrode in the device of the ion implantation modifying inner surface of plasma source of the present invention, this example arranges evenly that in the columnar electrode 8 of hollow the magnet homopolarity of 21, two vicinities of ring-shaped magnet is relative; In the hollow edged electrode of hollow, water-cooling channel is set, after in use water is constantly made cooling process from the water-in water inlet of hollow edged electrode to hollow edged electrode, discharges from the water outlet of hollow edged electrode again.The magnetic control supplementary mode that Fig. 4 adopts winding around to produce magnetic field improves tubular workpiece gas inside ionization level, makes it to produce along the axial magnetic field of tubular workpiece at its outer wall winding around 22 of outer most surrounding of tubular workpiece 4.
The present invention adopts the magnetic control supplementary mode to strengthen in sputter, the hollow edged electrode water-cooling channel being set in modification to add water cooling, with the efficient and the homogeneity of further raising modifying inner surface.
Claims (6)
1, the device of the ion implantation modifying inner surface of a kind of plasma source, tubular workpiece is placed a Processing Room, and the hollow edged electrode that a columnar electrode and can be allowed plasma diffusion from the inside to the outside coaxial arrangement in this tubular workpiece, this two electrode and radio-frequency power supply are connected, between hollow edged electrode and tubular workpiece, be connected a negative high voltage power source, it is characterized in that: also comprise a drive unit that tubular workpiece and hollow edged electrode are produced relative rotation; Described hollow edged electrode is made of the wire electrode that is distributed on the cylindric strut member outside surface, and this wire electrode is circumferential uniform distribution, or formula distributes in the shape of a spiral; Also be provided with the device that is used to produce magnetic field in the described Processing Room.
2, press the device of the ion implantation modifying inner surface of the described plasma source of claim 1, it is characterized in that, the described device that is used for producing magnetic field is for to place ringshaped magnet at the columnar electrode of hollow, and homopolarity is relatively evenly arranged vertically between magnet and the magnet.
By the device of claim 1 or the ion implantation modifying inner surface of 2 described plasma sources, it is characterized in that 3, the described device that is used to produce magnetic field is that the outer wall at tubular workpiece twines a coil, connects a direct current power supply again at the two ends of coil and makes.
By the device of the ion implantation modifying inner surface of the described plasma source of claim 1, it is characterized in that 4, described hollow edged electrode is the metal tube of the hollow of connection.
5, by the device of the ion implantation modifying inner surface of the described plasma source of claim 1, it is characterized in that described drive unit is no oily motor, places in the Processing Room.
6, by the device of claim 1 or the ion implantation modifying inner surface of 5 described plasma sources, it is characterized in that described Processing Room is made of tubular workpiece itself.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101130926A CN100368590C (en) | 2003-12-26 | 2003-12-26 | Apparatus for inner surface modification by plasma source ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101130926A CN100368590C (en) | 2003-12-26 | 2003-12-26 | Apparatus for inner surface modification by plasma source ion implantation |
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| Publication Number | Publication Date |
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| CN1635177A true CN1635177A (en) | 2005-07-06 |
| CN100368590C CN100368590C (en) | 2008-02-13 |
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| CNB2003101130926A Expired - Fee Related CN100368590C (en) | 2003-12-26 | 2003-12-26 | Apparatus for inner surface modification by plasma source ion implantation |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101902871A (en) * | 2010-07-27 | 2010-12-01 | 中国科学院等离子体物理研究所 | Hollow cathode arc chamber |
| CN101525738B (en) * | 2009-04-23 | 2011-05-11 | 哈尔滨工业大学 | Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel |
| CN1845292B (en) * | 2006-04-30 | 2011-07-20 | 哈尔滨工业大学 | Magnetic field assistant self glow plasma ion implantation device |
| CN102517555A (en) * | 2012-01-06 | 2012-06-27 | 李德杰 | Equipment and technology for coating pipe |
| CN103594317A (en) * | 2013-11-27 | 2014-02-19 | 苏州市奥普斯等离子体科技有限公司 | Improved type powder material surface plasma processing device |
| CN103748972A (en) * | 2011-06-30 | 2014-04-23 | 先进能源工业公司 | Projected plasma source |
| CN104108053A (en) * | 2014-06-19 | 2014-10-22 | 华中科技大学 | Plasma and pulse discharge composite polishing method for large-scale complicated metal surface |
| CN110349823A (en) * | 2018-04-02 | 2019-10-18 | 日本电产株式会社 | Plasma processing apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101845616B (en) * | 2010-05-25 | 2012-06-13 | 大连理工大学 | Conductor electric exploding plasma-based low-energy metal ion implantation (PBLEMII) device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05253680A (en) * | 1992-03-12 | 1993-10-05 | Hitachi Ltd | Method and apparatus for modifying tube inside surface |
| CN1137284C (en) * | 2001-04-27 | 2004-02-04 | 中国科学院物理研究所 | Method for modifying inner surface of tubular workpiece |
| CN1180124C (en) * | 2002-09-30 | 2004-12-15 | 哈尔滨工业大学 | Tube type work piece inner surface beam ion implantation installation |
| CN2577436Y (en) * | 2002-09-30 | 2003-10-01 | 哈尔滨工业大学 | Apparatus for injecting ions onto inner surface of tubular workpiece using high-voltage glow-discharge |
| CN2670377Y (en) * | 2003-12-26 | 2005-01-12 | 中国科学院物理研究所 | Surface modifier in double magnetic assistant piping workpiece |
-
2003
- 2003-12-26 CN CNB2003101130926A patent/CN100368590C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1845292B (en) * | 2006-04-30 | 2011-07-20 | 哈尔滨工业大学 | Magnetic field assistant self glow plasma ion implantation device |
| CN101525738B (en) * | 2009-04-23 | 2011-05-11 | 哈尔滨工业大学 | Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel |
| CN101902871A (en) * | 2010-07-27 | 2010-12-01 | 中国科学院等离子体物理研究所 | Hollow cathode arc chamber |
| CN103748972A (en) * | 2011-06-30 | 2014-04-23 | 先进能源工业公司 | Projected plasma source |
| US10225919B2 (en) | 2011-06-30 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | Projected plasma source |
| CN102517555A (en) * | 2012-01-06 | 2012-06-27 | 李德杰 | Equipment and technology for coating pipe |
| CN103594317A (en) * | 2013-11-27 | 2014-02-19 | 苏州市奥普斯等离子体科技有限公司 | Improved type powder material surface plasma processing device |
| CN104108053A (en) * | 2014-06-19 | 2014-10-22 | 华中科技大学 | Plasma and pulse discharge composite polishing method for large-scale complicated metal surface |
| CN110349823A (en) * | 2018-04-02 | 2019-10-18 | 日本电产株式会社 | Plasma processing apparatus |
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| CN100368590C (en) | 2008-02-13 |
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Granted publication date: 20080213 Termination date: 20111226 |