CN1632920A - Method for accurately controlling ion implantation concentration and pressure compensating factor synchronous control method - Google Patents
Method for accurately controlling ion implantation concentration and pressure compensating factor synchronous control method Download PDFInfo
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- CN1632920A CN1632920A CN 200310123504 CN200310123504A CN1632920A CN 1632920 A CN1632920 A CN 1632920A CN 200310123504 CN200310123504 CN 200310123504 CN 200310123504 A CN200310123504 A CN 200310123504A CN 1632920 A CN1632920 A CN 1632920A
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- residual gas
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Abstract
It is an accurate control ion injecting concentration method, which comprises the following steps: first to analyze the remain gas in the ion injection body; then to measure the remaining gas sub-pressure with three remaining gas with pressure of P1, P2 and P3, wherein the K constants are separately K1, K2 and K3; then to measure the ion beam current Im with its real injection Ir as Im=Irxe#+[-(K1P1+K2P2+K3P3)].
Description
Technical field
The present invention relates to a kind of method of accurate control ion implantation concentration and the method for Synchronization Control pressure compensation factor, and particularly relate to a kind of by residual gas analyser (residual gas analyzer, RGA) with Synchronization Control pressure compensation factor (pressure compensate factor, PCOMP), and then accurately control the method that ion flows into the concentration in the wafer.
Background technology
Ion implantation technique is a kind of technology of generally using in manufacture of semiconductor, and it is to be used for making wafer or wafer specific region impurity.Yet along with dwindling and the lifting of assembly integration of size of components, the impurity concentration of injecting in the wafer specific region must accurate control.Wherein, the vacuum degree in the ion implantor is exactly one of factor that influences the ion implantation concentration accuracy.Generally speaking, vacuum degree in the ion implantor can increase and variation with the time that board uses, this is because after going through the long-term production fabrication steps, high vacuum processing procedure chamber in the board, the refrigerating water pump adsorption capacity can be worse and worse, and tend to the residual gas that has, and these residue gas cognition make the vacuum degree variation, and can produce charge-exchange reaction (charge exchange reaction) with the ion beam of part, and make state of charge and the previous parameter value of the setting difference to some extent of actual ions bundle.More detailed explanation is, if residual gas and ion beam produce charge-exchange reaction, and make part ion be neutralized into neutral atom, the ion that is neutralized will can not measured by the current measuring device in the ion implantor (for example Faraday cup), therefore, measured current value can be also lower than the amount of the ion beam of reality.Opposite, if residual gas and charge-exchange reaction that ion beam produces are the electron detachments (electron stripping) that makes ion beam, the measured current value of the interior current measuring device of ion implantor can be also higher than the amount of the ion beam of reality.
In order to address the above problem, prior art has the notion that proposes a kind of pressure compensation factor, and it is by the setting pressure compensating factor, injects the inaccurate problem of implantation concentration that board vacuum degree variation is caused with counterion.In the prior art, the method of decision pressure compensation factor is to utilize the wafer that is coated with photoresist layer to carry out the ion implantation step of a series of different pressures compensating factors earlier, and measure the sheet resistor value of this wafer, and obtain the straight line that concerns of its pressure compensation factor of wafer that is coated with photoresist layer and sheet resistor value.In addition, utilize blank wafer to make the ion implantation step of a series of different pressures compensating factors, and measure its sheet resistor value, with the straight line that concerns between the pressure compensation factor of obtaining blank wafer and the sheet resistor.And above-mentioned two crosspoints that concern straight line promptly are the pressure compensation factors that suggestion is set.
Yet, because of being based on, the method for above-mentioned decision pressure compensation factor determined under the good and quite clean condition of the vacuum degree of ion implantor, when therefore if the vacuum degree variation of board or other factors change, the pressure compensation factor that this kind mode is determined still may be inaccurate, and the concentration that makes ion inject can't be controlled accurately.
Summary of the invention
Therefore purpose of the present invention just provides a kind of method of accurate control ion implantation concentration, the problem that causes ion implantation concentration accurately to control with the vacuum degree variation that solves because of ion implantor.
A further object of the present invention just provides a kind of method of Synchronization Control pressure compensation factor, with solve the pressure compensation factor of obtaining with known method still may have inaccurate, and the problem that causes ion implantation concentration still can't accurately control.
The present invention proposes a kind of method of accurate control ion implantation concentration, at first analyze the residual gas in the ion implantor, measure the dividing potential drop of these residual gass in ion implantor afterwards, wherein if there are three kinds of residual gass to remain in the ion implantor, then the dividing potential drop of first residual gas is P1, the dividing potential drop of second residual gas is P2, the dividing potential drop of the 3rd residual gas is P3, and the constant of first residual gas is K1, the constant of second residual gas is K2, the constant of the 3rd residual gas is K3, wherein K1, K2, K3 represents first, second, the 3rd residual gas and ion beam produce the ability of charge-exchange reaction.Afterwards, measure the current value I m of ion beam, so the actual injection rate Ir of ion beam is:
Im＝Ir×e
-(K1P1+K2P2+K3P3)。
In preferred embodiment, the method that obtains K1, K2, K3 comprises at first produce ion beam in the ion implantor of vacuum state, inject first residual gas afterwards slowly in ion implantor, up to pressure raising 2 to 3 progression (order) of ion implantor.Then, the pressure of record in the ion implantor (P1 '), and measure the current value (Im ') of ion beam, and set the amount of the ion beam that Ir ' produced down for vacuum state, so by Im '=Ir ' * e
-(K1P1 ')Can obtain the K1 value.And repeat above step, promptly can obtain K2 and K3 value.
The present invention more proposes a kind of method of Synchronization Control pressure compensation factor, and it is to be applicable to ion implantation process, and the method is installed residual gas analyser in ion implantor.Utilize kind and the dividing potential drop of this residual gas analyser then, pass through the kind and the dividing potential drop of the residual gas that analyzed afterwards, with the pressure compensation factor of synchronous adjustment ion implantor to analyze the residual gas in the ion implantor.
In the present invention, all list in because of the dividing potential drop of various residual gass in the ion implantor and with the ability that ion beam produces charge-exchange reaction and to consider, therefore can control the concentration that ion injects accurately.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 is the flow chart according to the method for the accurate control ion implantation concentration of preferred embodiment of the present invention.
Fig. 2 is the flow chart according to the method for the constant K that obtains each residual gas of preferred embodiment of the present invention.
Accompanying drawing indicates explanation
S100, S102, S104, S106, S200, S202, S204, S206: step
Embodiment
Shown in Figure 1, this figure is the flow chart according to the method for the accurate control ion implantation concentration of preferred embodiment of the present invention.
At first, carry out step (S100), utilize residual gas analyser to analyze the interior residual gas of ion implantor.At this moment, can obtain the kind that remains in the residual gas in the ion implantor, and the gas that these residual gass are fed during with the previous ion implantation process that carries out is relevant, for example argon gas, carbon dioxide, oxygen, nitrogen, steam or hydrogen or the like.
Afterwards, carry out step (S102), measure the partial pressure value of above-mentioned residual gas in ion implantor.Particularly, the method for the dividing potential drop of measurement residual gas for example utilizes above-mentioned residual gas analyser to carry out simultaneously.In preferred embodiment, if the residual gas that above-mentioned steps analyzed has three kinds (first residual gas, second residual gas and the 3rd residual gass), then can synchro measure (in-situ) be that the dividing potential drop of P1, second residual gas is that the dividing potential drop of P2, the 3rd residual gas is P3 to the dividing potential drop of first residual gas.At this moment, according to the residual gas kind that above-mentioned steps analyzed, can find out the constant K (for example constant k2 of the constant K 1 of first residual gas, second residual gas and the constant K 3 of the 3rd residual gas) of each residual gas, wherein constant K represents that this kind residual gas and ion beam produce charge-exchange and send out the ability of answering, so the constant K of each residual gas system is relevant with the kind and the character of residual gas itself.What is particularly worth mentioning is that there is direct relation in this constant K system with pressure compensation factor.
Then, carry out step (S104), measure the current value I m of ion beam, wherein, the method for measuring the current value I m of ion beam for example is to utilize ion to inject interior current measuring device to carry out, as Faraday cup (Faraday Cup).
Afterwards, carry out step (S106), bring following mathematical expression into the dividing potential drop of above-mentioned each residual gas and K constant and by the measured current value of Faraday cup:
Im＝Ir×e
-(K1P1+K2P2+K3P3)
Promptly can learn the actual injection rate Ir of ion beam.
What is particularly worth mentioning is that, in above-mentioned steps (S102), obtain the constant K of each residual gas, for example the flow process of the method for the constant K 3 of the constant k2 of the constant K 1 of first residual gas, second residual gas and the 3rd residual gas as shown in Figure 2.
Please refer to Fig. 2, at first carry out step (S200), in the ion implantor of vacuum state, produce ion beam.Wherein, the kind of this ion beam is predetermined ion beam kind of carrying out ion implantation process, and above-mentioned vacuum state for example is the vacuum degree of 5E-7 to 5E-9Torr, preferred 5E-8Torr.
Afterwards, carry out step (S202), inject first residual gas slowly in ion implantor, up to pressure raising 2 to 3 progression (order) of ion implantor.Wherein, injecting the method for first residual gas in ion implantor slowly for example is to utilize air valve (leak valve) to adjust the speed that gas injects, and the pressure after injecting first residual gas for example is 5E-4 to 5E-7Torr, preferred 5E-5Torr.
Then, carry out step (S204), the pressure of record in the ion implantor (P1 '), and measure the current value (Im ') of ion beam, and set the amount that Ir ' be the ion beam that produced under the vacuum state of step (S200).
Afterwards, carry out step (S206), bring above-mentioned obtained parameter into following mathematical expression: Im '=Ir ' * e
-(K1P1 '), can obtain the constant K 1 of first residual gas.Wherein, the method for measuring the current value (Im ') of ion beam is to utilize the current measuring device in the ion implantor to carry out, for example Faraday cup.
And similar to the mode of the constant K 1 that obtains first residual gas for the adquisitiones system of the constant K 3 of the constant k2 of second residual gas and the 3rd residual gas, the gas that unique difference is just injected when step (S202) makes second residual gas and the 3rd residual gas into.And other produces ion beam, record dividing potential drop and measure the steps such as current value of ion beam all the step with above-mentioned is identical.
Therefore, the present invention utilizes the residual residual gas analyser of installing in ion implantor.Utilize kind and the dividing potential drop of this residual gas analyser then, pass through the kind and the dividing potential drop of the residual gas that analyzed afterwards, with the pressure compensation factor of synchronous adjustment or control ion implantor to analyze the residual gas in the ion implantor.In other words, utilize residual gas analyser can analyze the state of the residual gas in the ion implantor at any time, no matter be to carry out ion implantation process at that time, or before or after carrying out ion implantation process equi-time point, therefore the present invention can look actual state needs and the state of analyzing each residual gas in the ion implantor at any time, with the vacuum state in the further understanding ion implantor, to adjust pressure compensation factor at any time.
Because method of the present invention is that the kind of each residual gas in the ion implantor and dividing potential drop or the like condition is all taken into account, and be not that the residual gas in the ion implantor is considered as single kind of gas, that is the present invention uses pure gas pressure and single constant K to consider pressure compensation factor or calculates ion implantation concentration, thus the present invention can so that the concentration that ion injects control accurately.
Exemplify an example, the general vacuum degree of ion implantor when just buying is best, therefore the accuracy of its ion implantation concentration can be up to 99%, but increase along with service time, its vacuum degree can be gradually variation, the ion implantor after using 2 years for example, the accuracy of its ion implantation concentration may have only 85%.But utilize method of the present invention, still can be so that used the accuracy of implantation concentration of the ion implantor in 2 years still to keep when just having bought quite (about about 99%).
Though the present invention discloses as above with preferred embodiment, so it is not in order to limit the present invention, and in not breaking away from design of the present invention and scope, when can doing a little change and retouching, so protection scope of the present invention is looked the claims person of defining and is as the criterion.
Claims (7)
1. accurate method of control ion implantation concentration comprises:
Analyze the residual gas in the ion implantor;
Measure the dividing potential drop of described residual gas in this ion implantor, three kinds of residual gass are wherein arranged, then the dividing potential drop of first residual gas is that the dividing potential drop of P1, second residual gas is that the dividing potential drop of P2, the 3rd residual gas is P3, and the constant of this first residual gas is that the constant of K1, second residual gas is that the constant of K2, the 3rd residual gas is K3, and wherein K1, K2, K3 represent that first, second, third residual gas and ion beam produce the ability of charge-exchange reaction; And
Measure the current value I m of this ion beam, wherein the actual injection rate Ir of this ion beam is: Im=Ir * e
-(K1P1+K2P2+K3P3)
2. the method for accurate control ion implantation concentration as claimed in claim 1, the method for wherein analyzing the described residual gas in this ion implantor is by utilizing residual gas analyser analysis.
3. the method for accurate control ion implantation concentration as claimed in claim 2 is a synchro measure with the step that this residual gas analyser is measured the described residual gas in this ion implantor wherein.
4. the method for accurate control ion implantation concentration as claimed in claim 2, the method for wherein measuring the dividing potential drop of described residual gas in this ion implantor are by utilizing this residual gas analyser to measure.
5. the method for accurate control ion implantation concentration as claimed in claim 1, the method that wherein obtains K1, K2, K3 comprises:
A) in the ion implantor of vacuum state, produce this ion beam;
B) inject first residual gas slowly in this ion implantor, up to 2 to 3 progression of pressure raising of this ion implantor;
C) write down pressure in this ion implantor (P1 '), and measure the current value (Im ') of this ion beam, and set the amount of the ion beam that Ir ' time produced for this vacuum state, then by Im '=Ir ' * e
-(K1P1 ')Can obtain the K1 value; And
D) repeating step is a) to c), and inject second residual gas and the 3rd residual gas respectively, after the current value of obtaining its dividing potential drop and ion beam, can calculate K2 and K3.
6. the method for accurate control ion implantation concentration as claimed in claim 5, wherein this vacuum state is 5E-7torr to 5E-9torr.
7. the method for a Synchronization Control pressure compensation factor, it is applicable to ion implantation process, comprising:
In ion implantor, install residual gas analyser;
Utilize kind and the dividing potential drop of this residual gas analyser to analyze the residual gas in this ion implantor; And
Kind by analyzing described residual gas and dividing potential drop are with the pressure compensation factor of this ion implantor of Synchronization Control.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200310123504 CN1632920A (en) | 2003-12-24 | 2003-12-24 | Method for accurately controlling ion implantation concentration and pressure compensating factor synchronous control method |
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| CN 200310123504 CN1632920A (en) | 2003-12-24 | 2003-12-24 | Method for accurately controlling ion implantation concentration and pressure compensating factor synchronous control method |
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| CN1632920A true CN1632920A (en) | 2005-06-29 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104599996A (en) * | 2015-01-31 | 2015-05-06 | 上海华虹宏力半导体制造有限公司 | Water vapor method of ion implantation machine |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
-
2003
- 2003-12-24 CN CN 200310123504 patent/CN1632920A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104599996A (en) * | 2015-01-31 | 2015-05-06 | 上海华虹宏力半导体制造有限公司 | Water vapor method of ion implantation machine |
| CN104599996B (en) * | 2015-01-31 | 2017-08-25 | 上海华虹宏力半导体制造有限公司 | The steam monitoring method of ion injection machine table |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
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