CN1624820B - Improved polymer PTC thermosensitive resistor and manufacturing method thereof - Google Patents
Improved polymer PTC thermosensitive resistor and manufacturing method thereof Download PDFInfo
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- CN1624820B CN1624820B CN 200410093329 CN200410093329A CN1624820B CN 1624820 B CN1624820 B CN 1624820B CN 200410093329 CN200410093329 CN 200410093329 CN 200410093329 A CN200410093329 A CN 200410093329A CN 1624820 B CN1624820 B CN 1624820B
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- high molecular
- ptc thermistor
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- metal electrode
- conductive filler
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Abstract
The invention relates to a improved macromolecule PTC thermistor and its manufacturing method. The manufacturing method is that the high polymer, conductive filler, inorganic non-conductive filler, and various auxiliary agents are melted and mixed to form core material by milling device banbury mixer and blender mill; the metal electrode sheet is compounded to the two sides of the core material by press; the composite sheet material is irradiated by the GAMA-ray or electron, its dosage is from 5Mad to 100Mad; then the sheet material is incised into chip with certain size, dipped into the coating liquid, solidify or cooled. After this the high polymer PTC thermistor is made. The invention PTC is made the surface of the material isolate from the air by the coating isolation layer. Thus withhigh of high voltage resistant.
Description
Affiliated technical field
A kind of modified model high molecular PTC thermistor of the present invention and manufacture method thereof relate to electronic devices and components and the manufacture method thereof that conducting high polymers thing composite material is a primary raw material.
Background technology
The crystallization of filled conductive particle or hypocrystalline polymer composite can show positive temperature coefficient PTC (positive temperature coefficient) phenomenon.That is to say that in certain temperature range, the resistivity of himself can increase with the rising of temperature.These crystallizations or semi-crystalline polymer comprise polyethylene, polypropylene, Kynoar, polytrifluorochloroethylene, and their copolymer.Conducting particles comprises carbon black, graphite, carbon fiber, metal dust, and wherein said metal dust comprises as silver powder, copper powder, aluminium powder, nickel powder, stainless steel powder etc.When lower temperature, this class conductor presents lower resistivity, is elevated to it more than high molecular polymer fusing point and work as temperature, during just so-called " shutoff " temperature, and the hurried rising of resistivity.This class electric conductor with ptc characteristics has been made thermistor, is applied to the overcurrent protection setting of circuit.In the normal state; electric current in the circuit is less relatively; the thermistor actuator temperature is lower; and when the big electric current that is caused by fault passes through this from the renaturation fuse; its temperature can be elevated to " shutoff " temperature suddenly; cause its resistance value to become very big, so just make circuit be in a kind of approximate " open circuit " state, thereby protected other elements in the circuit.And after fault was got rid of, the temperature of thermistor descended, and its resistance value can return to the low resistance state again.
High molecular PTC thermistor has been widely applied in the various fields such as communication, computer, automobile, Industry Control, household electrical appliance as the substitute of disposable fuse.Is that requirement can be born higher voltage for communication with the problem that high molecular PTC thermistor faced.And high molecular PTC material proof voltage rank deficient appears at present, and be prone to the phenomenon of sparking or burning, bring potential hidden danger to communication.
Summary of the invention
Purpose of the present invention is exactly modified model high molecular PTC thermistor and the manufacturing process thereof that a kind of high withstand voltage grade is provided for the defective that overcomes above-mentioned technology existence.
The object of the invention can be achieved through the following technical solutions: a kind of manufacture method of modified model high molecular PTC thermistor, by the following technical solutions:
This modified model high molecular PTC thermistor, its surface applies insulating coating except that being covered with the metal electrode part.
Described insulating coating is a curable organic macromolecular material in high temperature or room temperature, as silica gel; Also can be hot-melt polymer, as EVA PUR, polyethylene hot-melt adhesive, polypropylene hot glue and polyurethane hot melt; Also can be the higher paraffin of fusing point, as Tissuemat E.
A kind of manufacture method of modified model high molecular PTC thermistor, it is characterized in that will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides; Again with this composite sheet gamma-rays (Co
60) or electron irradiation crosslinked, dosage is 5～100Mrad, then sheet material is cut into the small pieces of certain size, it is dipped in the coating liquid again, solidifies or cooling, can make high molecular PTC thermistor.
Superiority of the present invention is, compared with prior art, PTC of the present invention is through being coated with insulating layer coating, makes the material surface secluding air, thereby made the high molecular PTC thermistor of high withstand voltage grade.
Embodiment
Example 1:
Will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides.80 ℃ of heat treatments are after 16 hours, with gamma-rays (Co in vacuum drying oven
60) irradiation, dosage is 20Mrad, and then become the small pieces of 5.5mm*5.5mm size with the punch press punching out, immerse in the KHK-1 electron level silica gel (Beijing Kehua New Material Science and Technology Co.,Ltd.) and film, promptly can be made into the high molecular PTC thermistor of normal temperature zero power resistance 10 Ω through 180 ℃ of curing after 4 hours.
But the product that makes with the inventive method 300 volts of proof voltages under 10 Ampere currents situations.
Example 2:
Will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides.80 ℃ of heat treatments are after 16 hours, with gamma-rays (Co in vacuum drying oven
60) irradiation, dosage is 20Mrad, and then becomes the small pieces of 5.5mm*5.5mm size with the punch press punching out, with EVA PUR (sky, Hangzhou wound chemical technology Co., Ltd, the TH-402A type) films, be cooled to room temperature, make the high molecular PTC thermistor of normal temperature zero power resistance 9 Ω.
But the product that makes with the inventive method 320 volts of proof voltages under 10 Ampere currents situations.
Claims (1)
1. the manufacture method of a modified model high molecular PTC thermistor, the surface of this modified model high molecular PTC thermistor is covered with the metal electrode part, its manufacture method comprise the steps: with by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides, forms composite sheet; Again with this composite sheet Co
60Gamma-rays or electron irradiation are crosslinked, and dosage is 5～100Mrad, then sheet material are cut into the small pieces of certain size, it are dipped in the coating liquid again, are insulation silica gel or EVA PUR, solidify or cooling formation insulating coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410093329 CN1624820B (en) | 2004-12-21 | 2004-12-21 | Improved polymer PTC thermosensitive resistor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410093329 CN1624820B (en) | 2004-12-21 | 2004-12-21 | Improved polymer PTC thermosensitive resistor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1624820A CN1624820A (en) | 2005-06-08 |
| CN1624820B true CN1624820B (en) | 2010-10-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410093329 Active CN1624820B (en) | 2004-12-21 | 2004-12-21 | Improved polymer PTC thermosensitive resistor and manufacturing method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN1624820B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103971870A (en) * | 2014-02-19 | 2014-08-06 | 贵州凯里经济开发区中昊电子有限公司 | Polymer thermosensitive resistor core material and product preparation method thereof |
| CN109755464B (en) * | 2017-11-08 | 2021-01-12 | 宁德时代新能源科技股份有限公司 | Electrode pole piece, electrochemical device and safety coating |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1485115A1 (en) * | 1987-03-26 | 1989-06-07 | Mo I Elektronnoj Tekhniki | Method of manufacturing of thermocatalytic transducer sensor |
-
2004
- 2004-12-21 CN CN 200410093329 patent/CN1624820B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1485115A1 (en) * | 1987-03-26 | 1989-06-07 | Mo I Elektronnoj Tekhniki | Method of manufacturing of thermocatalytic transducer sensor |
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| CN1624820A (en) | 2005-06-08 |
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Owner name: SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., L Free format text: FORMER NAME: SHANGHAI CHANGYUAN WEIAN ELECTRONIC LINE PROTECTION CO., LTD. |
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Address after: 200029, Siping Road, Shanghai, No. 710, 715-Z Patentee after: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd. Address before: 200029, Siping Road, Shanghai, No. 710, 715-Z Patentee before: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd. |
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Address after: 200083 806, floor 8, No. 125, Liuying Road, Hongkou District, Shanghai Patentee after: Shanghai Wei'an Electronic Co.,Ltd. Address before: 200029, Siping Road, Shanghai, No. 710, 715-Z Patentee before: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd. |
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Address after: Room 806, 8th floor, 125 Liuying Road, Hongkou District, Shanghai 200083 Patentee after: Shanghai Weian Electronics Co.,Ltd. Address before: 806, 8th floor, 125 Liuying Road, Hongkou District, Shanghai 200083 Patentee before: Shanghai Wei'an Electronic Co.,Ltd. |
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