CN1624820A - Improved polymer PTC thermosensitive resistor and manufacturing method thereof - Google Patents

Improved polymer PTC thermosensitive resistor and manufacturing method thereof Download PDF

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Publication number
CN1624820A
CN1624820A CN 200410093329 CN200410093329A CN1624820A CN 1624820 A CN1624820 A CN 1624820A CN 200410093329 CN200410093329 CN 200410093329 CN 200410093329 A CN200410093329 A CN 200410093329A CN 1624820 A CN1624820 A CN 1624820A
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China
Prior art keywords
high molecular
ptc thermistor
modified model
molecular ptc
manufacture method
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CN 200410093329
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Chinese (zh)
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CN1624820B (en
Inventor
王勇
侯李明
王军
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Shanghai Weian Electronics Co ltd
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WEIAN THERMOELECTRICAL MATERIALS CO Ltd SHANGHAI
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Priority to CN 200410093329 priority Critical patent/CN1624820B/en
Publication of CN1624820A publication Critical patent/CN1624820A/en
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Abstract

The invention relates to a improved macromolecule PTC thermistor and its manufacturing method. The manufacturing method is that the high polymer, conductive filler, inorganic non-conductive filler, and various auxiliary agents are melted and mixed to form core material by milling device banbury mixer and blender mill; the metal electrode sheet is compounded to the two sides of the core material by press; the composite sheet material is irradiated by the GAMA-ray or electron, its dosage is from 5Mad to 100Mad; then the sheet material is incised into chip with certain size, dipped into the coating liquid, solidify or cooled. After this the high polymer PTC thermistor is made. The invention PTC is made the surface of the material isolate from the air by the coating isolation layer. Thus with high of high voltage resistant.

Description

A kind of modified model high molecular PTC thermistor and manufacture method thereof
Affiliated technical field
A kind of modified model high molecular PTC thermistor of the present invention and manufacture method thereof relate to electronic devices and components and the manufacture method thereof that conducting high polymers thing composite material is a primary raw material.
Background technology
The crystallization of filled conductive particle or hypocrystalline polymer composite can show positive temperature coefficient PTC (positive temperature coefficient) phenomenon.That is to say that in certain temperature range, the resistivity of himself can increase with the rising of temperature.These crystallizations or semi-crystalline polymer comprise polyethylene, polypropylene, Kynoar, polytrifluorochloroethylene, and their copolymer.Conducting particles comprises carbon black, graphite, carbon fiber, metal dust, and wherein said metal dust comprises as silver powder, copper powder, aluminium powder, nickel powder, stainless steel powder etc.When lower temperature, this class conductor presents lower resistivity, is elevated to it more than high molecular polymer fusing point and work as temperature, during just so-called " shutoff " temperature, and the hurried rising of resistivity.This class electric conductor with ptc characteristics has been made thermistor, is applied to the overcurrent protection setting of circuit.In the normal state; electric current in the circuit is less relatively; the thermistor actuator temperature is lower; and when the big electric current that is caused by fault passes through this from the renaturation fuse; its temperature can be elevated to " shutoff " temperature suddenly; cause its resistance value to become very big, so just make circuit be in a kind of approximate " open circuit " state, thereby protected other elements in the circuit.And after fault was got rid of, the temperature of thermistor descended, and its resistance value can return to the low resistance state again.
High molecular PTC thermistor has been widely applied in the various fields such as communication, computer, automobile, Industry Control, household electrical appliance as the substitute of disposable fuse.Is that requirement can be born higher voltage for communication with the problem that high molecular PTC thermistor faced.And high molecular PTC material proof voltage rank deficient appears at present, and be prone to the phenomenon of sparking or burning, bring potential hidden danger to communication.
Summary of the invention
Purpose of the present invention is exactly modified model high molecular PTC thermistor and the manufacturing process thereof that a kind of high withstand voltage grade is provided for the defective that overcomes above-mentioned technology existence.
The object of the invention can be achieved through the following technical solutions: a kind of manufacture method of modified model high molecular PTC thermistor, by the following technical solutions:
This modified model high molecular PTC thermistor, its surface applies insulating coating except that being covered with the metal electrode part.
Described insulating coating is a curable organic macromolecular material in high temperature or room temperature, as silica gel; Also can be hot-melt polymer, as EVA PUR, polyethylene hot-melt adhesive, polypropylene hot glue and polyurethane hot melt; Also can be the higher paraffin of fusing point, as Tissuemat E.
A kind of manufacture method of modified model high molecular PTC thermistor, it is characterized in that will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides; Again with this composite sheet gamma-rays (Co 60) or electron irradiation crosslinked, dosage is 5~100Mrad, then sheet material is cut into the small pieces of certain size, it is dipped in the coating liquid again, solidifies or cooling, can make high molecular PTC thermistor.
Superiority of the present invention is, compared with prior art, PTC of the present invention is through being coated with insulating layer coating, makes the material surface secluding air, thereby made the high molecular PTC thermistor of high withstand voltage grade.
Embodiment
Example 1:
Will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides.80 ℃ of heat treatments are after 16 hours, with gamma-rays (Co in vacuum drying oven 60) irradiation, dosage is 20Mrad, and then become the small pieces of 5.5mm*5.5mm size with the punch press punching out, immerse in the KHK-1 electron level silica gel (Beijing Kehua New Material Science and Technology Co.,Ltd.) and film, promptly can be made into the high molecular PTC thermistor of normal temperature zero power resistance 10 Ω through 180 ℃ of curing after 4 hours.
But the product that makes with the inventive method 300 volts of proof voltages under 10 Ampere currents situations.
Example 2:
Will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides.80 ℃ of heat treatments are after 16 hours, with gamma-rays (Co in vacuum drying oven 60) irradiation, dosage is 20Mrad, and then becomes the small pieces of 5.5mm*5.5mm size with the punch press punching out, with EVA PUR (sky, Hangzhou wound chemical technology Co., Ltd, the TH-402A type) films, be cooled to room temperature, make the high molecular PTC thermistor of normal temperature zero power resistance 9 Ω.
But the product that makes with the inventive method 320 volts of proof voltages under 10 Ampere currents situations.

Claims (5)

1. modified model high molecular PTC thermistor, the surface is covered with the metal electrode part, it is characterized in that applying insulating coating in resistor surface.
2. the manufacture method of a kind of modified model high molecular PTC thermistor according to claim 1, will be by high molecular polymer, conductive filler, inorganic non-conducting filler and various auxiliary agent by the mixing facilities banbury with after the mill melting mixing becomes core, by press metal electrode film is compound in the core two sides; Again with this composite sheet gamma-rays (Co 60) or electron irradiation crosslinked, dosage is 5~100Mrad, then sheet material is cut into the small pieces of certain size, it is dipped in the coating liquid again, solidifies or cooling, can make high molecular PTC thermistor.
3. the manufacture method of a kind of modified model high molecular PTC thermistor according to claim 2 is characterized in that described insulating coating is a curable organic macromolecular material in high temperature or room temperature.
4. the manufacture method of a kind of modified model high molecular PTC thermistor according to claim 2 is characterized in that described insulating coating is a hot-melt polymer.
5. the manufacture method of a kind of modified model high molecular PTC thermistor according to claim 2 is characterized in that described insulating coating is the paraffin of fusing point more than room temperature.
CN 200410093329 2004-12-21 2004-12-21 Improved polymer PTC thermosensitive resistor and manufacturing method thereof Active CN1624820B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200410093329 CN1624820B (en) 2004-12-21 2004-12-21 Improved polymer PTC thermosensitive resistor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200410093329 CN1624820B (en) 2004-12-21 2004-12-21 Improved polymer PTC thermosensitive resistor and manufacturing method thereof

Publications (2)

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CN1624820A true CN1624820A (en) 2005-06-08
CN1624820B CN1624820B (en) 2010-10-13

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103971870A (en) * 2014-02-19 2014-08-06 贵州凯里经济开发区中昊电子有限公司 Polymer thermosensitive resistor core material and product preparation method thereof
CN109755464A (en) * 2017-11-08 2019-05-14 宁德时代新能源科技股份有限公司 Electrode pole piece, electrochemical device and safety coating

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1485115A1 (en) * 1987-03-26 1989-06-07 Mo I Elektronnoj Tekhniki Method of manufacturing of thermocatalytic transducer sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103971870A (en) * 2014-02-19 2014-08-06 贵州凯里经济开发区中昊电子有限公司 Polymer thermosensitive resistor core material and product preparation method thereof
CN109755464A (en) * 2017-11-08 2019-05-14 宁德时代新能源科技股份有限公司 Electrode pole piece, electrochemical device and safety coating

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Publication number Publication date
CN1624820B (en) 2010-10-13

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Owner name: SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO., L

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Address after: 200029, Siping Road, Shanghai, No. 710, 715-Z

Patentee after: Shanghai Changyuan Wayon Circuit Protection Co.,Ltd.

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Address after: Room 806, 8th floor, 125 Liuying Road, Hongkou District, Shanghai 200083

Patentee after: Shanghai Weian Electronics Co.,Ltd.

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