CN1619371A - Substrate laminating apparatus and method - Google Patents

Substrate laminating apparatus and method Download PDF

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Publication number
CN1619371A
CN1619371A CNA200510000510XA CN200510000510A CN1619371A CN 1619371 A CN1619371 A CN 1619371A CN A200510000510X A CNA200510000510X A CN A200510000510XA CN 200510000510 A CN200510000510 A CN 200510000510A CN 1619371 A CN1619371 A CN 1619371A
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China
Prior art keywords
chamber
base plate
valve
vacuum
pump
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CNA200510000510XA
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Chinese (zh)
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CN100367088C (en
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石山英一
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Shibaura Mechatronics Corp
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Shibaura Engineering Works Co Ltd
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Publication of CN1619371A publication Critical patent/CN1619371A/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133308Support structures for LCD panels, e.g. frames or bezels
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)

Abstract

The present invention relates to an improved substrate laminating apparatus and method, which are good for manufacturing liquid crystal display panel. For the vacuum pumping performing of a chamber (2), the opening of a valve (8a) communicating with a vacuum pump (82) is controlled to change the intake resistance of a pipe (81) from high to low, and to suppress an exhaust air stream occurring when vacuum pumping is started. Furthermore, in the process (vacuum venting) for recovering the atmosphere pressure in the chamber (2), a recovery valve (9a) is controlled to change from high to low, the inflow resistance of a gas introduced into the chamber (2), so that the amount of the gas introduced into the chamber (2) at the beginning of the vacuum venting is reduced. Therefore, since the air stream in the chamber (2) can be moderated during the vacuum pumping and the vacuum venting, the stirring up of dust in the chamber (2) and the attachment of the dust to the substrates can be avoided, and high-quality laminated substrates can be provided at a high manufacturing yield.

Description

Base plate bonding device and base plate bonding method
Technical field
The present invention relates to be suitable for making the good base plate bonding device of employings such as LCD panel and the improvement of base plate bonding method.
Background technology
The LCD panel that adopts in the displays such as PC and TV receiver or various monitors, the generally bonding method manufacturing of a pair of glass substrate that will be oppositely arranged by cementing agent round its display surface coating.
LCD panel is to enclose liquid crystal in the display surface between two bonding substrates to form, and enclosing liquid crystal at display surface has the pouring-in and liquid crystal of liquid crystal to splash into two kinds of formulas.The inclosure mode of the sort of liquid crystal no matter all is to scatter on any real estate and even a plurality of septs are set, and makes the substrate interbody spacer (cell gap) of having enclosed liquid crystal keep carrying out after certain bonding.
Fig. 1 is that expression is made the sectional drawing of LCD panel with existing base plate bonding device cut-away section with the liquid crystal drop following formula.
As shown in Figure 1, a pair of up and down rectangle glass 1a and 1b, be in by in the chamber 2 that chamber 2a, 2b form up and down, upper substrate 1a with maintenance means such as chuck remain on sucker 3a below, and the liquid crystal 4 and being coated with of on display surface, dripping with the cementing agent of its encirclement infrabasal plate 1b with sealant 5, equally with maintenance means such as chuck remain on down sucker 3b above.Wherein symbol 5a represents to be dispersed in the sept on the display surface.
Last sucker 3a structure, be connected on the supporting axis 6a that remains on travel mechanism 6, when utilizing travel mechanism 6 to move adjustment X-Y-θ direction, move along the above-below direction vertical (arrow Z) with X-Y-θ direction, upper substrate 1a is moved to and the identical back pressurization of relative infrabasal plate 1b position, two substrate 1a, 1b are coincided together.
Following sucker 3b is fixed in the lower chambers 2b, is provided with the video camera 71,72 of determining that upper and lower base plate 1a, 1b position are used in the lower chambers 2b.
Video camera 71,72, shooting forms the mark (arrangement mark) that allocation is really used on two substrate 1a, 1b, its image is supplied with not shown controller, utilize so-called pattern recognition method in the controller to detect the position of mark, and rely on the drive controlling of travel mechanism 6 according to the position that detects mark, the relative position between two substrate 1a, 1b is up and down coincide.
Wherein driving mechanism omits and does not illustrate, and the structure of the 2a of upper chamber can move up and down, and when the 2a of upper chamber decline is connected with lower chambers 2b, forms the airtight space of closing.And the structure of chamber 2 will be evacuated in the chamber 2 by means of this vacuum pump exhaust for by being connected with not shown vacuum pump to the pipeline 21 of inner opening.Symbol 2c represents to be fixed on the elastomeric element of the 2a of upper chamber end portion, is used to guarantee the impermeability when airtight, and the conveying used of the mobile lower chambers 2b of symbol 22 expressions.
When the base plate bonding device of note structure was made LCD panel in the employing, upper and lower base plate 1a, 1b bonding (operation) in the following order carried out.
Initial top of at first upper substrate 1a being loaded and moving into the following sucker 3b of lower chambers 2b, absorption remain on sucker 3a below.To be coated with the infrabasal plate 1b that sealant 5 surrounds the liquid crystal 4 of display surface then, immigration and absorption remain on the following sucker 3b of lower chambers 2b.
Then, fall the 2a of upper chamber formation and close the space, utilize the action exhaust of the vacuum pump that is connected with pipeline 21, through passing process to vacuumizing in the chamber 2 based on family curve shown in Figure 2.Under the vacuum atmosphere in chamber 2, make upper substrate 1a and infrabasal plate 1b carry out the position and coincide then, last sucker 3a falls upper substrate 1a is pressed on the infrabasal plate 1b, and 5 couples of two substrate 1a, 1b carry out bonding with sealant.
After destroying vacuum in the chamber 2 at last and returning to atmospheric pressure, make upper substrate 1a go up desorb from last sucker 3a, and move through the rising of the 2a of upper chamber, bonded two substrate 1a, the 1b on the sucker 3b shift out down.
As mentioned above, two substrate 1a, 1b are in again under the atmospheric pressure after bonding in vacuum atmosphere, so display surface between two substrate 1a, the 1b under the vacuum state, be that to bear big external and internal pressure poor between the atmospheric pressure in structure cell space and the substrate outside, thereby two substrate 1a, 1b are pressed on the sept 5a, formation has micron gap of unit precision (cell gap).
The sealant 5 of wherein bonding two substrate 1a, 1b, bonding after the heating or the ultraviolet ray (UV) irradiation and solidify.
As mentioned above, in the existing base plate bonding device of usefulness such as LCD panel manufacturing, in the chamber 2 in space is closed in formation, absorption remain on the infrabasal plate 1b position of upper substrate 1a and below on the sucker 3a identical after, bonding by means of the sealant 5 and the infrabasal plate 1b that use as cementing agent.
This moment, chamber 2 interior bleedings by means of vacuum pump vacuumized, and bonding operation carries out in vacuum atmosphere.
With vacuum pump when vacuumizing in the chamber 2, as shown in Figure 2, action began originally, and the air in the chamber 2 improve vacuum tightness rapidly because of inevitable the discharge smoothly, but, slow down gradually near the raising of purpose vacuum tightness L final vacuum degree along with the air that carries out in the chamber 2 of exhaust is thin gradually.
LCD panel, dust and dust are adhered to remarkable infringement display characteristic on display surface, so assemblies such as base plate bonding should be carried out in the clean room of dedusting certainly.
Though it is high more good more to make on-the-spot cleanliness, but it in fact is impossible making dust contained in the air and dust be entirely 0, and because the base plate bonding device comprises mechanically movable part, so partly producing new dust etc. from this mechanism is inevitably, thereby often this dust and the dust that are trapped in the chamber can not be removed.
And when the adhesive base plate, start vacuum pump when vacuumizing in the chamber 2, the action of exhaust rapidly during vacuum pump action beginning can be upset the air-flow in the chamber 2, thereby has the dust and the dust that are trapped in the lower chambers 2b to fly upward, attached to the anxiety on the substrate 1b display surface.
And, dust and dust adhering on bonding metacoxal plate, also often make the electrology characteristic deterioration of substrate.When the vacuum breaking in the chamber 2 after bonding, restore air pressure and can make also with air-flow that dusts and dust fly upward in the chamber 2, on electrode surface, the electrically conducting between infringement and the IC that is connected etc.
And to more and more meticulousr current of the requirement of display frame, even minimum dust and dust are arranged in the chamber, also can fly upward, on display surface and electrode part because of the air-flow that vacuumizes or produce when destroying vacuum, reduce the yield rate of making, thereby wish to be improved.
Summary of the invention
Therefore, it is a kind of when upper and lower base plate is bonding in vacuum chamber that the object of the invention is to provide, and can greatly avoid dust and dust to fly upward, and obtains the base plate bonding device and the base plate bonding method of good bonding substrate.
And other purposes of the present invention are to prevent to fall because of air in the chamber being vacuumized the upper substrate that causes.
In order to solve the note problem, a first aspect of the present invention, it is characterized in that in airtight chamber in the base plate bonding device to two base plate bondings, possess with said chamber be connected, the pump to vacuumizing in the chamber, and control valve on pump therewith and the pipe arrangement that said chamber is connected, the control device that the suction impedance of said pipe arrangement is changed.Therefore,, control valve on pump therewith and the pipe arrangement that said chamber is connected, the suction impedance of pipe arrangement is changed, sharply vacuumize, suppress dust and dust and fly upward so can relax by control device according to a first aspect of the present invention.
A second aspect of the present invention, it is characterized in that in airtight chamber in the base plate bonding device to two base plate bondings, possess with said chamber be connected, the pump to vacuumizing in the chamber, and after with said two base plate bondings, control and the recovery valve that the recovery mouth of said chamber inner opening links to each other, the inflow impedance that makes the inflow chamber indoor gas is from the big extremely control device of little variation.
Therefore, according to a second aspect of the present invention, make behind the base plate bonding and recover when the atmospheric operation in the chamber, recover to use valve by control, the inflow impedance that makes the inflow chamber indoor gas is from big extremely little variation, allow slowly return to atmospheric pressure in the chamber, so can alleviate flying upward of dust and dust in the chamber.
A third aspect of the present invention is characterized in that in airtight chamber the base plate bonding method of two base plate bondings is made up of following operation:
A pair of substrate is oppositely arranged on first operation in the said chamber to separate mode,
After this first operation, make the pump that is connected with said chamber with predetermined suction impedance action, to second operation that begins to vacuumize in the said chamber,
Begin extracting vacuum through after the schedule time or when the pressure in the said chamber reaches predetermined pressure through this second operation, valve on control and said pump and the pipe arrangement that said chamber is connected, make the suction impedance of said pipe arrangement advance the 3rd operation that reduces more
After this 3rd operation, the 4th operation of said two base plate bondings that in said chamber, will be oppositely arranged,
After this 4th operation, the recovery valve that links to each other with the recovery mouth of said chamber inner opening of control makes gas flow in the said chamber with the inflow impedance of being scheduled to, and allows said chamber internal gas pressure to the 5th operation of atmospheric pressure transition, and
After this 5th operation, the 6th operation that bonding said two substrates are taken out in the chamber.
Therefore, according to a third aspect of the present invention, be evacuated to through after the schedule time since second operation, valve on control and pump and the pipe arrangement that chamber is connected, make the suction impedance of pipe arrangement become littler, to force down initial extraction flow, so same with first invention, can suppress interior dust of chamber and dust and fly upward, alleviate adhering on the substrate display surface.
According to a fourth aspect of the present invention, it is characterized in that in airtight chamber in the base plate bonding device to two base plate bondings possessing with said chamber the pump that is connected, the air in the chamber is vacuumized, and the control device that the intake capacity of this pump is changed.
Therefore, according to a fourth aspect of the present invention, because the control device of the intake capacity variation that makes the pump that air in the chamber is vacuumized is arranged, this control device is owing to can make the intake capacity of pump change, so it is same with first aspect, can relax in the chamber and sharply vacuumize, suppress flying upward of dust and dust.
In addition, according to a fifth aspect of the present invention, it is characterized in that in airtight chamber the base plate bonding method of two base plate bondings is made up of following operation:
A pair of substrate is oppositely arranged on first operation in the said chamber to separate mode,
After this first operation, make the pump that is connected with said chamber, begin second operation that said chamber is vacuumized with predetermined intake capacity action,
Begin to vacuumize through after the schedule time or when said cavity indoor pressure reaches predetermined pressure through this second operation, control said pump or pump discharge valve or with pump and pipe arrangement that said chamber is connected on valve, make the intake capacity of said pump advance the 3rd operation that increases more
After this 3rd operation, the 4th operation of said two base plate bondings that in said chamber, will be oppositely arranged,
After this 4th operation, the recovery valve that links to each other with the recovery mouth of said chamber inner opening of control makes gas flow in the said chamber with the inflow impedance of being scheduled to, and allows said chamber internal gas pressure to the 5th operation of atmospheric pressure transition, and
After this 5th operation, the 6th operation that bonding said two substrates are taken out in the chamber.
Therefore, according to a fifth aspect of the present invention, begin extracting vacuum to the process schedule time from second operation, because the intake capacity of pump increases under control, so it is same with the 3rd invention, can initial extraction flow compacting is little, suppress interior dust of chamber and dust and fly upward, thereby alleviate adhering on the substrate display surface.
Description of drawings
Fig. 1 adopts in the liquid crystal display board manufacturing apparatus of existing base plate bonding device the part section to want the front elevation of portion.
Fig. 2 arrives performance diagram with the interior vacuum tightness of chamber that device shown in Figure 1 obtains.
Fig. 3 adopts the cut-away section of liquid crystal display board manufacturing apparatus of first kind of embodiment of the base plate bonding device that the present invention relates to want portion's front elevation.
Fig. 4 arrives performance diagram with the interior vacuum tightness of chamber that device shown in Figure 3 obtains.
Fig. 5 flows into performance diagram with the interior gas of chamber that device shown in Figure 3 obtains.
Fig. 6 is the process chart of the base plate bonding operation of presentation graphs 3 shown devices.
Fig. 7 is in the device shown in Figure 3, extremely takes out of the process chart of operating between the substrate in chamber behind base plate bonding.
Fig. 8 adopts the cut-away section of liquid crystal display board manufacturing apparatus of second kind of embodiment of the base plate bonding device that the present invention relates to want portion's front elevation.
Fig. 9 adopts the cut-away section of liquid crystal display board manufacturing apparatus of the third embodiment of the base plate bonding device that the present invention relates to want portion's front elevation.
Figure 10 is in presentation graphs 9 shown devices, the process chart of base plate bonding operation in the chamber.
Figure 11 is the synoptic diagram of the controller architecture that had of base plate bonding device that expression the present invention the 4th and the 5th kind of embodiment relate to.
Figure 12 is the process chart of pressure control operation in the base plate bonding device that relates to of expression the present invention the 4th kind of embodiment.
Figure 13 is that the interior vacuum tightness of base plate bonding device middle chamber that the 5th kind of embodiment of expression the present invention relates to arrives performance diagram.
Has embodiment
Following with reference to Fig. 3 to Figure 13, the base plate bonding device that just the present invention relates to and the embodiment of base plate bonding method elaborate.Among these figure, the structure identical with existing structure illustrated in figures 1 and 2 given prosign, and it describes omission in detail.
Fig. 3 is that the cut-away section that first kind of embodiment in the base plate bonding device of the present invention that the formula LCD panel of dripping adopts made in expression is wanted portion's sectional drawing; Fig. 4 is in presentation graphs 3 shown devices, and the vacuum tightness that changes in the chamber during with the controller by-pass valve control arrives the degree performance diagram.
As shown in Figure 3, a pair of up and down rectangle is peeled off substrate 1a, 1b, in chamber 2 respectively by negative-pressure adsorption or Electrostatic Absorption remain on sucker 3a below and above the following sucker 3b.
Last sucker 3a connection remains in the travel mechanism 6, install can be when X-Y-θ direction moves adjustment, along about (Z axle) direction move, so two substrate 1a, 1b up and down, closing in the space of being connected to form by 2a of upper chamber and lower chambers 2b, after the position was overlapped, it was bonding to utilize sealant 5 to carry out.Wherein descending sucker 3b also can connect remains in the travel mechanism 6.
Bonding two substrate 1a, 1b up and down in vacuum atmosphere, upper substrate 1a rise through the vacuum breaking in last sucker 3a desorb, chamber 2 and the 2a of upper chamber and are moved out of after moving.Bonded two substrate 1a, 1b in chamber 2 or after shifting out on the conveying, heat or ultraviolet ray (UV) irradiation the sealant 5 of bonding two substrate 1a, 1b.
In this first kind of embodiment, as exhaust in chamber 2 with destroy the means that vacuum is used, by the exhaust gear 8 that is connected with chamber 2 with constitute for mechanism of qi structure 9, and can drive controlling exhaust gear 8 and to mechanism of qi structure 9 as the controller 10 of control device.
Exhaust gear 8, pipe arrangement 81 by the lower chambers 2b inner opening connection of on conveying 22, moving, the vacuum pump 82 of pipe arrangement connection constitutes therewith, in the time of controller 10 control vacuum pump 82, can also control valve 8a that is provided with on the pipe arrangement 81 and the drain tap 8b that on the gas outlet of vacuum pump 82, is provided with.
And, give mechanism of qi structure 9 by flowing into pipeline 91 and flowing into the pressure source that pipeline 91 is connected therewith and constitute, flow into pipeline 91 and link to each other, form the structure that a kind of admission controller 10 controls are located at the recovery usefulness valve 9a that flows on the pipeline 91 with recovery mouth 23 on the roof that is located at the 2a of upper chamber.Wherein pressure source 92 is made of head tank, has the effect that sharply changes dewfall when preventing vacuum breaking because of pressure simultaneously concurrently, for example wherein accommodates the gas that contains inert gases such as nitrogen.
And in being provided with the 2a of upper chamber that recovers mouth 23, the air strainer 11 that covers this opening portion is installed.The structure of air strainer 11 is with the certain intervals place of recovering mouth 23 a plate member 11a who is oppositely arranged to be arranged, from recovery mouthful 23 this plate member of the gas percussion that is blown into 11a, in the net inflow enclosure space of the gas of impact by laterally encirclement.
Therefore, air strainer 11 can not only be removed and flow into the dust and the dust of being sneaked in the gas in the chamber 2, and can also make through recovering mouthful 23 gas supplied more extensive space in the chamber 2 and be blown into, suppress former state and directly be blown into a kind of louver(-vre) structure that gas flow direction is changed.
Last note constitutes down, though through to vacuumize in the chamber 2, the position of two substrates 1a, 1b coincide, then bonding and destroy the operation of vacuum in the chamber 2 after, take out bonding two substrate 1a, 1b, but vacuum makes it to the atmospheric pressure operation of recovery down in the chamber 2 to vacuumizing and destroy in the chamber 2, all is to carry out by 10 pairs of exhaust gears 8 of controller with to the drive controlling of mechanism of qi structure 9.
That is to say, when vacuumizing with controller 10 controls, recovery to mechanism of qi structure 9 is under the closed condition with valve 9a, open the drain tap 8a of exhaust gear 8, start vacuum pump 82, simultaneously during before the vacuum tightness that achieves the goal at inner control valve 8a, the suction impedance of pipe arrangement 81 is changed from big to small, for example the branch two-stage changes from large to small.
That is to say that like that, controller 10 is opened the back in the time to the elapsed time t at by-pass valve control 8a, for example valve 8a is opened 1/2 shown in the arrival family curve of vacuum tightness in Fig. 4 middle chamber, behind the elapsed time t again control begin its standard-sized sheet.
Wherein not only like this with the time as controlled variable, also can be with pressure (vacuum arrival degree) as controlled variable.Under this occasion, the pressure detector 24 that detects chamber 2 internal pressures of setting, with pressure value of detecting of this pressure detector 24 input controller 10, when this pressure value of detecting reach with Fig. 4 in during the suitable vacuum tightness of time t with valve 8a standard-sized sheet.
Its result, the vacuum tightness in the chamber 2 before valve 8a begins to be operated to elapsed time t during in, can utilize to reduce valve 8a and suppress gas flow by pipe arrangement 81 exhausts.Therefore, before valve 8a begins to be operated to elapsed time t during in, can utilize bigger suction impedances in the pipe arrangement 81 to suppress the air capacity of vacuum pump 82, make vacuum tightnesss in the chamber 2 test the curve shown in the A and like that slowly pass along Fig. 4.
That is to say, according to present embodiment, different with sharply the rise passing that forms of vacuum tightness in the sort of known arrangement middle chamber shown in the dot-and-dash line B among Fig. 4, pass owing to become slowly, so exhaust stream is mobile not strong in vacuum middle chamber 2, thereby can avoid chamber 2 interior dusts and dust to fly upward.
Though controller 10 is with valve 8a standard-sized sheet during elapsed time t, but the existing quite progress of chamber 2 interior vacuum tightnesss this moment, even so carry out the standard-sized sheet operation this moment, make that suction impedance Control in the pipe arrangement 81 is little can not to form the forced-ventilated air-flow yet, can prevent that not only chamber 2 interior dusts and dust from flying upward, and can also reach target vacuum degree L.
After reaching target vacuum degree L in the chamber 2, controller 10 cuts out valve 8a and stops vacuum pump 82 actions.Wherein pipe arrangement 81, as shown in Figure 3, link to each other with opening on the lower chambers 2b base plate, form the structure of bleeding downwards, thus the air in the chamber 2 can aspirate downwards, like this can be more effective during the inhibition exhaust dust and dust fly upward.
To substrate 1a, 1b carry out bonding after, controller 10 makes to mechanism of qi structure action, can control in the chamber 2 and return to atmospheric pressure atmosphere state from vacuum state.
So controller 10 control recovers to open with valve 9a, in chamber 2, supply with the gas of air such as containing nitrogen etc. from pressure source 92.
At this moment, controller 10 controls recover the opening degree with valve 9a, and the opening degree in the time of for example will beginning is set at 1/4, all opens through behind the schedule time T again.Can make so from large to small from the inflow impedance of pressure source 92 inflow gas in chamber 2.
Wherein not only can be like this with the time as controlled variable, also can be with pressure as controlled variable.Under this occasion, the pressure detector 24 that detects chamber 2 internal pressures of setting with pressure value of detecting of this pressure detector 24 input controller 10, makes when this pressure value of detecting reaches predetermined pressure and recovers usefulness valve 9a standard-sized sheet.
Its result tests shown in the C curve as Fig. 5, and after recovery was opened with valve 9a, before elapsed time T, the gas flows that the unit interval flows in the chamber 2 were passed because of recovery turns down with low-level p with valve 9a.This low-level gas down flows into and will last till before the time T, owing to recovered suitable air pressure in the chamber 2, even controller 10 controls recover the standard-sized sheet with valve 9a behind the elapsed time T, the gas flow that flows into pipeline 91 of flowing through can not increase yet, and reaching atmospheric pressure in the chamber 2 does not have the equilibrium point of pressure reduction to pass towards inside and outside before.
So, controller 10 controls recover to use valve 9a, and the inflow impedance that flows in the chamber 2 is changed from big to small.Thereby compare with the sort of situation shown in dot-and-dash line D among Fig. 5, promptly with do not make the situation that any adjustment control makes it down to flow in the chamber 2 from the gas of pressure source and compare, because gas flow can not reach high-level P in the unit interval, flow into the air-flow in the chamber 2 in the time of can be with vacuum breaking, suppress to such an extent that do not make that dust and dust fly upward in the chamber 2.
Following with reference to Fig. 6 and process flow diagram shown in Figure 7, illustrate with the base plate bonding device adhesive base plate 1a of first kind of embodiment of the invention described above, the operation of 1b.
Fig. 6 is the bonding process of expression substrate 1a, 1b, at first in step 41, a pair of substrate 1a, 1b up and down be oppositely arranged on formed in the chamber 2 that closes the space.
And then in step 42, controller 10 makes exhaust gear 8 actions, and valve 8a is adjusted in control, and the suction impedance of pipe arrangement 81 is increased, and drives vacuum pump 82 and begins to vacuumize.
Then controller 10 judges whether to have passed through in schedule time t or the chamber 2 whether reached predetermined pressure (step 43), passed through (YES) when having reached predetermined pressure in schedule time t or the chamber 2 when being judged as, transfer to step 44, controller 10 is adjusted by-pass valve control 8a, the suction impedance setting of pipe arrangement 81 is little, continue with vacuum pump 82 extracting vacuum.Wherein in last note step 43, do not reach (NO) when not reaching predetermined pressure in schedule time t or the chamber 2 when being judged as, return step 42 and continue in the original big extracting vacuum under the impedance that sucks.
So transfer to step 45, controller 10 judges whether the vacuum tightness in the chamber 2 has reached target vacuum degree L, judge that (YES) transferred to step 46 when having reached target vacuum spent, behind identical the carrying out in two substrate 1a, 1b position that is oppositely arranged, carry out bonding with cementing agent.Judge miss the mark vacuum tightness L still when step 45 middle controller 10, when perhaps not reaching predetermined pressure as yet in the chamber 2 (NO), return step 44, continue extracting vacuum under original little suction impedance.
Following with reference to Fig. 7, with regard under the vacuum atmosphere two substrate 1a, 1b are carried out bonding after, vacuum breakings are as follows to shifting out two blocks of specifications between substrate 1a, the 1b in the chamber 2.
At first in step 51, controller 10 controls recover use valve 9a, under the big inflow impedance that reduces in the cross section, set to such an extent that make in the gas inflow chamber 2 of pressure source 92, allow gas flow in the chamber 2 that is evacuated.
Then, in judging whether to have passed through schedule time T or chamber 2, step 52 controller 10 whether reached predetermined pressure, when judged result has reached predetermined pressure for having passed through in schedule time T or the chamber 2 (YES), transfer to step 53 and recover use valve 9a, be adjusted at and make under the littler inflow impedance in the gas inflow chamber 2 by controller 10 control.Wherein, return step 51 and continue gas was flowed into original big the inflow as judged result (NO) when not reaching schedule time T.
Transfer to step 54 then, judge whether return to atmospheric pressure in the chamber 2 by controller 10, judged result (YES) when returning to atmospheric pressure is transferred to step 55, and the 2a of upper chamber is moved up, and takes out bonded two substrate 1a, 1b on the sucker 3b down from the lower chambers 2b that moves.When wherein in being judged to be chamber 2 in the step 54, not returning to atmospheric pressure as yet (NO), return step 53, continue to make gas to flow into.
Wherein according to this first kind of embodiment, owing in chamber 2, be provided with the air strainer 11 that constitutes louver(-vre) with recovery mouthful 23 opposite positions, after coming out, air strainer 11 changes the flow direction diffusion by recovering mouthful 23 gases that are blown into, so can make the air-flow that flows in the chamber 2 further gentle, can further alleviate flying upward of chamber 2 interior dusts and dust.
In sum, according to this first kind of embodiment, when when two substrate 1a, 1b are bonding chamber 2 being vacuumized, because the descending variation of suction impedance of control and vacuum pump 82 connecting pipingss 81, so the generation of forced-ventilated air-flow is suppressed in the chamber 2, can suppress to be trapped in flying upward of chamber 2 interior dusts and dust.
And according to this first kind of embodiment, when vacuum is destroyed in the chambers 2 in the bonding back of two substrate 1a, 1b, adjust control by controller 10 and recover to use valve 9a, make the gas that flows in the chamber 2 flow into the descending variation of impedance, so the generation that chamber 2 interior high currents are gone into air-flow is suppressed, thereby can avoid being trapped in flying upward of chamber 2 interior dusts and dust.
Therefore, can avoid flying upward of chamber 2 interior dusts and dust, on substrate surface and electrode of substrate surface, unfavorable conditions such as substrate display performance or electrology characteristic reduction be taken place.
In first kind of embodiment of last note, though when vacuumizing in the chamber 2 by the valve 8a of control setting on a pipe arrangement 81 that is connected with vacuum pump 82, the suction impedance of vacuum pump 82 is changed, but also can between vacuum pump 82 and chamber 2, be connected several pipe arrangements, make the operation of regularly staggering of valve on each pipe arrangement, the all suction impedances of pipe arrangement are changed, and the dust and the dust that suppress in the chamber 2 fly upward.
Equally, when vacuum breaking in the chamber 2, by connecting two flow ipes that diameter is different between pressure source 92 and the chamber 2, make and be arranged on each pipeline the valve that the recovers usefulness operation of regularly staggering, the inflow impedance that flows in the chamber 2 is changed, and the dust and the dust that also can suppress in the chamber 2 fly upward.
That is to say that Fig. 8 is second kind of embodiment pie graph of expression base plate bonding device of the present invention.With two different pipe arrangement 81A, the 81B of diameter that chamber 2 connects, its structure can make the descending variation of suction impedance of exhaust gear 8; Two different pipe arrangement 91A, the 91B of diameter that connect with chamber 2 are also arranged for mechanism of qi structure 9, its structure can make the descending variation of inflow impedance to mechanism of qi structure 9.
According to second kind of embodiment shown in Figure 8, vacuum pump 82 in the exhaust gear 8 is under the operating state, at first before time t arrives during in, the valve 8aB on the minor diameter pipe arrangement 81B is opened in controller 10 control, and open valve 8aA major diameter pipe arrangement 81A on during t time of arrival.This moment, the valve 8aB of pipe arrangement 81B also can close.
Wherein can be not yet like this with the time as controlled variable, but with pressure as controlled variable.Under this occasion, the pressure detector 24 that detects chamber 2 internal pressures of setting with pressure value of detecting of this pressure detector 24 input controller 10, is opened valve 8aA when this pressure value of detecting reaches vacuum tightness suitable with time t among Fig. 4.
The descending variation of suction impedance of result's vacuum pump 82 in time t scope, thus same with first kind of embodiment, when chamber 2 vacuumized, can avoid the forced-ventilated air-flow to produce, successfully carry out the bonding operation of substrate.
On the other hand, give mechanism of qi structure 9 too, with state that pressure source 92 is connected under, at first before time T arrives during in, controller 10 control is opened minor diameter and is flowed into recovery valve 9aB on the pipe arrangement 91B, and the recovery that flow into major diameter pipe arrangement 91A on during T time of arrival is opened with valve 9aA.Flow into the recovery of pipe arrangement 91B and also can close with valve 9aB this moment.
Wherein can be not yet like this with the time as controlled variable, and with pressure as controlled variable.Under this occasion,, when reaching predetermined pressure, this pressure value of detecting opens recovery valve 9aA with pressure value of detecting of this pressure detector 24 input controller 10.
The result, the descending variation of inflow impedance of gas in the time T scope because in the inflow chamber 2, so it is same with first kind of embodiment, in making chamber 2 when the atmospheric pressure recovery operation, do not produce high current in the chamber 2 and go under the condition of air-flow, can avoid dust and dust attached on the substrate after bonding.
Wherein the formation of Fig. 8 middle chamber 2 grades is same with formation shown in Figure 3, by being located at the filtrator 11 in the chamber 2, can further weaken the impulsive force that flows into air-flow.
In the formation of second kind of embodiment of last note, identical certainly to being evacuated to the operation (operation) that destroys vacuum behind the base plate bonding in the chamber 2 with operation in Fig. 6 and the first kind of embodiment shown in Figure 7, so omit relevant this part explanation.
In first and second kinds of above-mentioned embodiments, though all be the structure that connects a vacuum pump 82, can make the descending variation of suction impedance of pipe arrangement on the whole by by-pass valve control 8a, 8aA, 8aB, but also can in formation, be set up in parallel several vacuum pumps as exhaust gear 8, make the ascending generally variation of intake capacity of vacuum pump.
Fig. 9 is the base plate bonding formation picture of device of the third embodiment of the present invention, exhaust gear 8 is by two pipe arrangement 81A, 81B of the same diameter that is connected with chamber 2, be formed by connecting with different two vacuum pump 82A, the 82B correspondences of intake capacity (gas flow that can suck in the unit interval, rise/minute) respectively.
And the control mode of controller 10 is, in the time before the time of arrival t, the pipe arrangement 81B that will be connected with the little vacuum pump 82B of intake capacity goes up the valve 8aB that is provided with and opens, behind the elapsed time t valve 8aB is closed, the pipe arrangement 81A that will be connected with the big vacuum pump 82A of intake capacity goes up the valve 8aA that is provided with and opens.Wherein behind the elapsed time t, also valve 8aA and 8aB can be opened simultaneously.
Wherein, can be not yet like this with the time as controlled variable, and with pressure (degree that vacuum arrives) as controlled variable.Under this occasion, the pressure detector 24 detect chamber 2 internal pressures is set, pressure value of detecting of this pressure detector 24 is imported controller 10, when this pressure value of detecting reach with Fig. 4 in valve 8aB is closed during the suitable vacuum tightness of time t, valve 8aA opens.
And can pass through by-pass valve control 8bA and valve 8bB, replace by-pass valve control 8aA and valve 8aB that the intake capacity of pump is changed.
Therefore, exhaust gear 8 is all, and in time t scope, the intake capacity of the pump that is connected with chamber 2 is ascending finally to change, in the process that in to chamber 2, vacuumizes, can suppress flying upward of the generation of forced-ventilated air-flow and chamber 2 interior dusts and dust.
And in this third embodiment, in giving mechanism of qi structure 9 structures, also dispose flow into impedance phase with two pressure source 92A and 92B, the control mode of controller 10 is: from begin to gas to the time of arrival T during in, only will be arranged on a recovery that flows on the pipeline 91B and open, will be located at another recovery that flows on the pipeline 91A behind the elapsed time T again and also open with valve 9aA with valve 9aB.
Wherein can be not yet like this with the time as controlled variable, and with pressure as controlled variable.Under this occasion, the pressure value of the detecting input controller 10 with pressure detector 24 will recover to open simultaneously with valve 9aB with valve 9aA and recovery when this pressure value of detecting reaches predetermined pressure.
Like this, when in the chamber 2 during vacuum breaking, because the descending variation of inflow impedance from the pressure source inflow gas, so same with first and second kinds of embodiments, dusts and dust flies upward, the generation of adhering on the electrode surface of adhesive base plate with unfavorable condition such as electrology characteristic deterioration can both be inhibited in the chamber 2.Wherein symbol 8bA and 8bB represent the discharge valve of vacuum pump 82A and 82B respectively in Fig. 9.
Following with reference to Figure 10, in the third embodiment with regard to last note, from describing to being evacuated to the operation of destroying between the vacuum behind the base plate bonding in the chamber 2.
That is to say, to the operation between the step 86, correspond respectively to shown in Figure 6 from each operation of 41 to 46 from step 81 shown in Figure 10.And be with the difference of operation shown in Figure 6: corresponding with " increasing the suction impedance vacuumizes " operation in the step 42, be " pump that reduces with intake capacity vacuumizes " operation in the step 82; Corresponding with " reducing to suck impedance vacuumizes " operation in the step 44, be the operation of " big pump vacuumizes with intake capacity " in the step 84; Though have these differences, because various purpose and functions of carrying out vacuum pumping all are common, only on flowing, operation there are differences, omit so describe in detail.
And relevant vacuum breaking operation, in the operation of this 3rd embodiment, be common also, so owing to repeat to describe in detail and omit with the operation of first embodiment shown in Figure 7.Therefore, in this third embodiment, when chamber 2 vacuumized, because not producing strong exhaust stream in the chamber 2 flows, so can greatly avoid dust and dust to fly upward, when vacuum is destroyed, can suppress to produce strong inflow air-flow simultaneously too, suppress dust and dust and on the electrode surface of substrate, adhere to, can make the substrate of good bonding.
In second and the third embodiment of last note, though be respectively arranged with two pipe arrangement 81A and 81B on the structure, and two inflow pipe arrangement 91A and 91B, perhaps two vacuum pump 82A and 82B, and two pressure source 92A and 92B, but these numbers also can be set at more than three.
And in the third embodiment, the intake capacity of single vacuum pump is changed, allow the ascending variation of intake capacity of pump.Like this, for example by the ascending variation of switching degree, perhaps carry out to the mode that changes at a high speed by low speed by the rotational speed that makes the vacuum pump CD-ROM drive motor with discharge line 8bA shown in Figure 9 and 8bB.
Below, describe with regard to the 4th kind of embodiment of the present invention with Fig. 8, Figure 11 and Figure 12.
Controller 10 shown in Figure 8 as shown in figure 11, has storage area 101, rating unit 102 and control section 103.Storage area 101 with curve shown in Figure 4 or corresponding tables form, is stored the relation between the elapsed time that begins to vacuumize from chamber 2 and the chamber 2 internal pressure desired values corresponding with this elapsed time.And, the intake capacity of vacuum pump 82 should be set at, when valve 8aA and/or valve 8aB were in normally open, chamber 2 internal pressures and begin to vacuumize between the elapsed time were in the top position of curve shown in Fig. 4 solid line.
When beginning chamber 2 vacuumized, as shown in figure 12, pressure detector 24 detects pressure (step 111) in the chamber 2 at interval with preset time, and the pressure value of detecting is sent into controller 10.Rating unit 102 in the controller 10 compares (step 112) with the value of detecting of pressure detector 24 and storage area 101 stored with corresponding desired value of elapsed time.Under the pressure value of detecting was in occasion below the pressure target value, valve 8aA and/or valve 8aB opened (step 113, step 114).On the other hand, under the occasion of the pressure value of detecting overpressure desired value, control makes valve 8aA and/or valve 8aB close (step 113, step 115).Then judge the vacuum tightness L (step 116) that whether has reached predetermined in the chamber 2, do not reach as yet under the occasion of predetermined vacuum level L and return step 112, repeat flow process.Reached under the occasion of predetermined vacuum level L, flow process stops.
Controller 10 can make the pressure variation in the chamber 2 coincide with desired value by control so repeatedly.And for giving mechanism of qi structure 9, also shown in Figure 5 the sort of of storage in advance begins to carry out same control to the relation between elapsed time behind the gas and the influx desired value corresponding with this elapsed time, and control recovers the switch with valve 9aA, valve 9aB.
This control can be carried out with the control of last note second embodiment is parallel.That is to say, when going up the control of the 4th kind of embodiment of note, in during before reaching time t, controller 10 is realized step 113 from last note to step 116 by the switch of valve 8aB, realizes going up the step 113 of note to step 116 by the switch of valve 8aA after reaching time t.And can be not with the time with chamber 2 pressure as controlled variable, reach before the predetermined pressure, realize from step 113 to step 116 by the switch of valve 8aA and valve 8aB.
In last note first or the third embodiment, also can be same with second embodiment, can walk abreast and adopt the control of the 4th kind of embodiment.
Below, the 5th kind of embodiment of the present invention is described with Fig. 8, Figure 11, Figure 12 and Figure 13.
Adopt Electrostatic Absorption and vacuum suction to adsorb under the occasion of substrate 1a among Fig. 8, sucker 3a and Electrostatic Absorption and vacuum suction remain on this between substrate 1a on sucker 3a in chamber 2, because of there is short space in bending and the uneven thickness of upper substrate 1a, this space inner sealing has air.Through confirming, the air in this space in the process that is depressurized in chamber 2, causes in some pressure limit conditions such as the confining force of upper substrate 1a and substrate 1a sizes in Electrostatic Absorption and vacuum suction, emits between substrate 1a and last sucker easily.For example test is confirmed, is of a size of 1500mm * 1200mm in the length and width of substrate, and weight is 3 kilograms, and Electrostatic Absorption power is 5 gram/cm 2The negative pressure that vacuum suction produces is 1000Pa, have under the occasion in about 10 microns gaps between upper substrate 1a and the last sucker 3a, pressure in the chamber 2 are in atmospheric pressure (month 100,000 Pa) to the 1000Pa, Electrostatic Absorption and vacuum suction and make upper substrate 1a be applied to pressure on the sucker 3a, be applied to the pressure that distributes between sucker 3a and the upper substrate 1a greater than above-mentioned air, will make substantially within its upward note space that retains.Yet reach moment of 1000Pa from chamber 2 internal pressures, compare with the power that is applied on the substrate because of Electrostatic Absorption and vacuum suction, the power that air is discharged strengthens, and air will significantly be discharged.And then when the pressure in the chamber 2 reach 400Pa constantly before, air almost can all be discharged.
But also confirm that under the occasion that sharply reduces pressure between the 1000Pa to 400Pa, the upper substrate 1a on last sucker 3a will fall by Electrostatic Absorption.This is owing to following effect causes, promptly reduce sharply when pressing when having to go to the toilet in last note pressure limit, the air that is enclosed between sucker 3a and the upper substrate 1a will once be discharged in chamber 2, from discharging flowing rapidly of air between last sucker 3a and the upper substrate 1a, produce the very big graviational interaction that upper substrate 1a is broken away from from last sucker 3a.It is believed that this power can make the upper substrate 1a that is attracted on the sucker 3a fall.Under the occasion that upper substrate 1a falls, before falling the infrabasal plate 1b that remains on down on the sucker 3b is arranged, the above substrate 1a of institute will impact infrabasal plate 1b.Its result often produces adverse consequencess such as substrate 1a, 1b breakage.
Therefore suitable by-pass valve control, make chamber 2 interior rate of pressure changes in 1000Pa to 400Pa scope, the air between sucker 3a and the upper substrate 1a can slowly be discharged for rate of pressure change less than other pressure limits (from atmospheric pressure to 1000Pa, from 400Pa to about 1Pa).Can relax like this to make and discharge flowing of air between sucker 3a and the upper substrate 1a, the upper substrate 1a that prevents to be attracted on the sucker 3a produces with the phenomenon that vacuumizes in the chamber 2 and fall.
Therefore in the 5th kind of embodiment, should in storage area 101, store shown in Figure 13, chamber 2 internal pressures (vacuum tightness L) the little curve or the table of comparisons of pressure change rate in advance in other pressure limits of 1000Pa to 400Pa scope internal ratio.And same with the 4th kind of embodiment of last note, according to the flow path control valve 8aA of Figure 12 and/or the switch of valve 8aB, make pressure in the chamber 2 along curvilinear motion shown in Figure 13.
Like this, can relax, prevent to be attracted to upper substrate 1a on the sucker 3a and follow interior the vacuumizing and fall of chamber 2 from discharging flowing of air between last sucker 3a and the upper substrate 1a.
Wherein above-mentioned control also can be carried out with the control in first, second, third kind of embodiment of last note is parallel.
The remarkable discharge scope of air between upper substrate 1a and the last sucker 3a, though almost be between the 1000Pa to 400Pa, in case but the conditions such as size that it is believed that Electrostatic Absorption power change, the pressure that air begins significantly to discharge will fluctuate up and down at 1000Pa, and the pressure that air can be discharged will change up and down at 400Pa.Therefore, not necessarily, also can in MIN necessary pressure limit, reduce pressure change rate all in 1000Pa to the 400Pa scope pressure change rate being reduced.
According to conditions such as Electrostatic Absorption power size and substrates, in 1000Pa to 400Pa scope, keep predefined a period of time under the certain pressure, air is emitted between substrate and sucker, obtain to prevent the effect that substrate falls.
Go up in addition in note first embodiment, though about valve 8a with recover to be divided into two-stage and switch explanation, be divided into more than three grades and switch with valve 9a, perhaps will the classification of degree of switching but control and make it can realize same purpose function yet by the line style variation.
And the operation of first valve in the embodiment, also can be used in the operation of each valve in second embodiment.
Can adopt in addition with the exhaust gear in each embodiment 8 with to the mechanism of qi structure 9 suitable structures of selecting combination.
The sort of situation no matter, according to base plate bonding device of the present invention and base plate bonding method, can greatly avoid dust and dust attached to the reduction that causes the substrate electrology characteristic on substrate display surface or the electrode of substrate face, carry out the excellent bonds of substrate, being particularly suitable for LCD panel etc. adopts in making, can improve the yield rate that it is made, in practicality, obtain remarkable result.
In sum,, can carry out the bonding of high-quality substrate, be particularly suitable for the LCD panel manufacturing and adopt works very well according to base plate bonding device of the present invention and base plate bonding method.
And, can prevent from air in the chamber is vacuumized and the upper substrate that causes falls phenomenon according to base plate bonding device of the present invention and base plate bonding method.

Claims (6)

1. a base plate bonding device is characterized in that, in the base plate bonding device with two base plate bondings in airtight chamber, possesses
Be connected on the said container, the pump of vacuum pumping in the container;
The recovery valve that is connected with recovery mouth at said chamber inner opening;
Control changes the said intake capacity that vacuumizes the pump of usefulness, behind above-mentioned two base plate bondings, controls above-mentioned recovery valve simultaneously, makes gas flow into the interior control device of said chamber.
2. according to the described base plate bonding device of claim 1, it is characterized in that said control device is controlled the ascending variation of said intake capacity.
3. according to the described base plate bonding device of claim 1, it is characterized in that said control device is controlled said recovery valve, the inflow impedance of inflow chamber indoor gas is changed from large to small.
4. according to the described base plate bonding device of claim 1, it is characterized in that said chamber is provided with and makes from the said mouthful louver(-vre) structure that the direction that flows into air-flow in chamber changes of recovering.
5. a base plate bonding method is characterized in that, in the base plate bonding method to two base plate bondings in airtight chamber, is made up of following operation:
A pair of substrate is oppositely arranged on first operation in the said chamber to separate mode,
After this first operation, make the pump that is connected with said chamber, begin second operation that said chamber is vacuumized with predetermined intake capacity action,
Begin to be evacuated to through after the schedule time or when said cavity indoor pressure reaches predetermined pressure through this second operation, control said pump or pump discharge valve or with pump and pipe arrangement that said chamber is connected on valve, the 3rd operation that the intake capacity of said pump is increased more
After this 3rd operation, the 4th operation of said two base plate bondings that in said chamber, will be oppositely arranged,
After this 4th operation, the recovery valve that links to each other with the recovery mouth of said chamber inner opening of control makes gas flow in the said chamber with the inflow impedance of being scheduled to, and allows said chamber internal gas pressure to the 5th operation of atmospheric pressure transition, and
After this 5th operation, the 6th operation that bonding said two substrates are taken out in the chamber.
6. according to the described base plate bonding method of claim 5, it is characterized in that, said the 5th operation, the recovery valve by control links to each other with the recovery mouth of said chamber inner opening changes the inflow impedance of inflow chamber indoor gas from large to small.
CNB200510000510XA 2002-02-22 2003-02-21 Substrate laminating apparatus and method Expired - Lifetime CN100367088C (en)

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US7773190B2 (en) 2005-06-30 2010-08-10 Lg. Display Co., Ltd. Liquid crystal display panel and fabricating method thereof
CN114342059A (en) * 2019-09-16 2022-04-12 应用材料公司 Low-temperature electrostatic chuck

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WO2005041156A1 (en) * 2003-10-23 2005-05-06 Shin-Etsu Engineering Co., Ltd. Method for sealing substrates while stacking
JP4661716B2 (en) * 2006-07-24 2011-03-30 株式会社日立プラントテクノロジー Board bonding equipment
CN102173170B (en) * 2011-03-08 2014-07-23 李梦琪 Panel bonding device
JP6692709B2 (en) * 2016-06-24 2020-05-13 デクセリアルズ株式会社 Method for manufacturing joined body, connection method
CN109676842A (en) * 2019-02-15 2019-04-26 宁波志胜科技有限公司 A kind of production process for automobile interior and its process units

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JP3306409B2 (en) * 1991-04-25 2002-07-24 シャープ株式会社 Liquid crystal display device manufacturing equipment
JPH07325279A (en) * 1994-06-01 1995-12-12 Dainippon Screen Mfg Co Ltd Pressure reducing device and method thereof
US5796116A (en) * 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
JP3493786B2 (en) * 1995-01-27 2004-02-03 株式会社日本自動車部品総合研究所 Liquid crystal cell manufacturing method and liquid crystal cell manufacturing apparatus

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US7773190B2 (en) 2005-06-30 2010-08-10 Lg. Display Co., Ltd. Liquid crystal display panel and fabricating method thereof
CN114342059A (en) * 2019-09-16 2022-04-12 应用材料公司 Low-temperature electrostatic chuck

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CN1439919A (en) 2003-09-03
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