CN1615505A - 具有多个发光图像元素并防止非选择图像元素的充电/放电的无源寻址矩阵显示器 - Google Patents
具有多个发光图像元素并防止非选择图像元素的充电/放电的无源寻址矩阵显示器 Download PDFInfo
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Abstract
本发明涉及具有多个发光图像元素的一种无源寻址矩阵显示器。提供驱动电路,其具有用于选择像素元素的行的装置和用于驱动行中的像素的装置。去耦装置连接到每个图像元素,用于防止所述图像元素在其处于非选择状态而另一同时被驱动的图像元素处于选择状态时充电/放电。
Description
本发明涉及无源寻址矩阵显示器,具有:在矩阵中布置的多个发光图像元素;在矩阵的行中布置的多个地址总线,被提供选择信号,所述选择信号具有低信号电平和高的非选择信号电平;以及与地址总线垂直的多个数据总线,每个所述发光图像元素在第一和第二显示电极之间包括发光层。
上述无源寻址矩阵结构的一个问题在于,不想要的电流可以在非选择的反向偏置的图像元素上流动,从而使非选择的像素被充电和放电而不使用。这在数据总线期间在切换过渡中产生高峰值电流和额外的功耗。
这一现象在聚合物-LED和有机-LED显示器中特别关键,其中LED层具有相当大的电容。这是因为LED层很薄(只有10-500nm量级)造成的。特别是在大型显示器的情况下,电容会妨碍无源矩阵操作,因为偏移电流与用于在LED中发光的电流相比过大。
本发明的目的是克服上述问题并且降低电容性功耗。
这一目的和其他目的是用开头一段中所述类型的显示器来实现的,其特征在于,每个发光图像元素与一个去耦装置相组合,所述去耦装置被连接在第一和第二显示电极之中相应一个电极与地址总线和数据总线之中相应一个总线之间,并且与图像元素串联,用于防止所述图像元素在其处于非选择状态而另一图像元素处于选择状态时充电/放电。
通过采用本发明的去耦装置,能避免非选择图像元素的任何不想要的充电/放电。
在具体情况下,避免在像素二极管反向上的放电电流。
对于去耦功能,可以采用一个可电气控制(例如利用行信号来控制)的有源开关,类似于机电开关,但是优选采用不需要控制信号的无源去耦装置。
无源去耦装置的优点在于,可以采用适当布置在相应总线和一个显示电极之间的(肖特基Schottky)二极管。肖特基二极管可以实施为包括金属层和半导体聚合物层的层组合。用于肖特基二极管的半导体聚合物层可以有益地具有与图像元素的发光层相同的成分。二极管可以布置在LED像素的阳极一侧或阴极一侧上。
本发明可以应用于公共阳极和公共阴极寻址、电压驱动和电流驱动寻址,并能有益地采用缩微显示技术来应用,其中显示器是直接制作在(单一)Si芯片上的。
无论何种情况,都避免明亮列具有较短像素的问题。
在常规的无源寻址中,不需要与像素串联的去耦开关功能。事实上,这样做是不自然的。因此,迄今为止还未知具有串联二极管的无源寻址发射矩阵显示器。
与像素元素串联的开关的组合在有源寻址矩阵显示器中是公知的;实际上这是基本的。在有源寻址中,像素按行脉冲被接通,并且在至少一帧时间内保持有效,直至下一个行脉冲。这样,像素亮度就始终等于平均显示亮度。也就是说,要为每个像素增加某些(TFT)电子器件来实现以下功能:
1.数据切换,用于在像素中插入数据内容
2.对至少下一行脉冲存储内容的存储器,而在LCD中可以使用单元电容
3.用于将像素单元连接到电源的像素开关;这一开关可以和输入数据开关组合在一起。
USP5,479,280公开了一种每个像素具有两个开关装置和放电装置的有源矩阵寻址液晶显示器。第二开关是冗余的,并且没有第一优先权功能,只是为了增加处理流量。然而,按照这种结构,注入电容交扰,用于补偿第一开关的初始交扰,同时利用串联二极管防止泄漏。而且,行转换也会造成这种交扰,而在本发明的情形下,去耦二极管装置(晶体管)主要功能是在列激活期间的隔离。
USP4,651,149公开了另一种有源寻址液晶显示器。在这种显示结构中,增加了一个额外开关(图3中的31),其主要功能是在汲取低DC电流以防止功率耗散的同时执行像素电压的适当复位。另外,开关31与像素并联(第3列第14行),而本发明建议与像素串联的开关转换动作。
有源和无源寻址之间的另一个差别是,对于无源寻址,在一帧时间内在许多短的明亮闪光(bright flash)期间生成光;每一秒要执行许多次以避免闪烁效果。另外,本发明中使用的开关功能是为了防止未选择像素从技术上反向偏置状态被充电到基本上零偏置状态(只要不达到材料门限电压,可以选择地达到低的正向偏置状态)。这种状态不同于USP5,479,280中所述的状态,其中需要一个开关来防止选定的像素被放电。
在以下的描述中将提出本发明的目的和优点,并且其中一部分根据此说明将是显而易见的,或可以通过对本发明的实践而知晓。采用权利要求书中具体指出的元件及其组合将实现和获得本发明的这些目的和优点。
以下要参照附图描述本发明的一些实施例。
图1是用于常规的无源寻址矩阵显示器的电路部分;
图2是按照本发明的无源寻址矩阵显示器的一个实施例的电路部分;
图3是通过按照本发明的矩阵显示器的横向像素-二极管布局(基本部件)的截面图;
图4是图3中基本部件的(平面)图;
图5是通过按照本发明的矩阵显示器的垂直像素-二极管布局(基本部件)的截面图;
图6是图5中基本部件的(平面)图;
图7是表示用于寻址LED显示单元的脉冲的示意图;和
图8示意地表示按照本发明的矩阵显示器的一个实施例,其使用机电开关形式的有源去耦装置。
图1表示一个无源寻址矩阵(PolyLED)显示器的一列。用Vlow=0选择行1,而利用Vhigh未选择其它行。为了导通像素1,列电压Vc必须从零上升到LED操作电压Vp。在这一过渡期间,C2...Cn上的反向电压从Vhigh降到Vhigh-Vp。为了防止这些像素被导通,这一电压应不超过2V的门限电压,即典型的有机材料值。存储在列电容中的总电荷包括C1×Vp(=像素1中的电荷)加上存储在未被激活、主要被反向偏置的其它2..n个像素中的电荷(C2+...+Cn)×Vp。在发光时间结束时,列电压被降低回到零,并且放掉所有电荷。对于开关频率f(=n×帧速率),这造成的功率耗散是
Pc=f×n×Cp×Vp×Vp。
尽管通过像素1能够消除电荷以生成光,或暂时存储电荷以便在后续充电期间使用,但是未选择像素2..n仍被充电和放电而不使用。这在列切换过程中产生高峰值电流和额外的功耗。在显示器中出现如在像素n中用虚线短路所示的所谓的短路时会产生另一个问题。在该像素被选定时,列电流从列线流到低行n电压,并且不发光,这导致黑像素。更麻烦的是在选中其他行之一的情况下:高行n电压被强加在列线上,无论外部列节点上的数据输入信号Vc如何,选定的像素始终被导通。在此图中,Rc代表列电阻。
问题在于不想要的电流会在未选中的反向偏置像素上流动,这在像素短路的情况下导致大电荷存储和行-行电流。本发明解决上述问题的办法是:增加与每个像素相串联的去耦装置,例如二极管或开关,以避免任何不想要的充电/放电。在一种特殊情况下,避免像素二极管反向中的放电电流。仅有选定行像素的开关必须被接通。在上述驱动方案中,简单的二极管就能提供这一功能,因为它在反向偏置下会自动进入非导通状态。为了尽量减少存储的电荷,这一额外二极管应具有比像素电容小的电容,并且具有低的导通电压。
图2的示意图表示用二极管实现去耦功能的一个实施例。这些二极管是按照其作为选择开关起作用的方式被布置的。二极管电容Cd现在将等效像素电容从Cp降低到Ce=(Cp×Cd)/(Cp+Cd)。所需的电压从Vp增大到Vp+Vd。这造成总的电容功耗是
P=f×n×Ce×(Vp+Vd)×(Vp+Vd)
对于良好的单一Si/肖特基类型二极管,Cd和Vd分别小于Cp和Vp,这使功耗降低到
P=f×n×Cd×Vp×Vp
因而能按因子Cd/Cp降低功耗。与常规的有源矩阵寻址系统相比,还有进一步的优点:
-没有像素保持电容造成的孔径损失
-没有很低的像素电流,其电流效率cd/A的值很低
-没有严格的晶体管匹配要求。
图3和4表示横向像素-二极管布局结构。在衬底30(例如Si的基底)的表面上布置有:
-金属列电极(阳极)31;
-第一显示电极32(在此情况下与列电极31部分重叠);
-二极管元件33;
-将二极管元件33连接到LED层叠(stack)36(该层叠36可以包括聚合物或有机发光材料层)的一个(ITO)电极35(阳极)上的第二显示电极34;
-透明行电极(阴极)37;
所有这些如图3的截面图所示。
在图4中表示所得到的横向像素-二极管布局结构的一个平面图。
图5和6表示一种垂直像素-二极管布局结构。
在衬底50(例如Si)的表面上布置有:
-金属列电极(阳极)51;
-LED层叠56(它可以包括聚合物或有机发光材料层);
-(ITO)电极55(LED层叠56的阳极);
-金属行电极57(LED层叠56的阴极);
-行电极57的顶上的第一显示电极52;
-夹在第一显示电极52和第二显示电极54之间的二极管元件53;
所有这些表示在图5的截面图中。
在图6中表示所得到的垂直像素-二极管布局结构的平面图。
图7表示驱动方案的一个示例。在本示例中,信息被一次一行(line-at-a-time)写入,并且用脉宽调制来控制亮度。
提供给四个所示的行电极的电压被表示为11a-d。如图所示按时间分段划分的,每次一个地将行设置在零电压电位上。这些信号不需要调制,因为它们仅仅用于在特定时刻“释放”特定的行电极。
提供给所示四个列电极之一的电压用12表示。如图所示按时间分段划分的,为电极馈送不同宽度的电压脉冲12a-d。第一脉冲12a会与给上一行电极馈送零电压的信号11a吻合,导致LED 13a被激活。第二脉冲12b同样将引起LED 12b的激活,并且依此类推。由于LED的亮度主要取决于电流,所以建议用电流驱动替代电压驱动。为了代替固定电流/脉冲宽度调制,也可以用固定宽度/电流调制(“幅度”调制)来控制亮度。为了获得更多的灰度,可以采用脉冲宽度调制和脉冲高度调制的组合。行、列的切换电压可以在10V的量级。图8的示意图表示其中机电开关S1,S2...Sn用作去耦装置的一个实施例。
应该注意到,本领域的技术人员能够实现对上述最佳实施例的许多修改。例如,对于LED层叠或二极管,可以采用其它合适的材料。只要能实现预定的功能,二极管还能按不同的方式布置在电极之间。另外,根据两组电极之间电流的流动,本发明在理论上还能在任何类型的其中希望实现像素的改善寻址的显示器上实现。
总之,本发明涉及具有多个发光图像元素的无源寻址矩阵显示器。提供驱动电路,具有用于选择像素元素行的装置和用于驱动行中的像素的装置。去耦装置被连接到每个图像元素,用于防止所述图像元素在其处在未选择状态而另一同时被驱动的图像元素处在选择状态时的充电/放电。
Claims (8)
1.一种无源寻址矩阵显示器,具有:在矩阵中布置的多个发光图像元素;在矩阵的行中布置的多个地址总线,被提供选择信号,所述选择信号具有低信号电平和高的非选择信号电平;以及与地址总线垂直的多个数据总线,每个所述发光图像元素在第一和第二显示电极之间包括发光层,其特征在于,每个发光图像元素与去耦装置相组合,所述去耦装置被连接在第一和第二显示电极之中相应一个电极与地址总线和数据总线之中相应一个总线之间,并且与图像元素串联,用于防止所述图像元素在其处于非选择状态而另一图像元素处于选择状态时充电/放电。
2.按照权利要求1的矩阵显示器,其中所述去耦装置包括二极管。
3.按照权利要求2的矩阵显示器,其中所述二极管包括肖特基二极管。
4.按照权利要求2或3的矩阵显示器,其中每个二极管和其与之组合的图像元素形成横向结构。
5.按照权利要求2或3的矩阵显示器,其中每个二极管和其与之组合的图像元素形成垂直结构。
6.按照权利要求3的矩阵显示器,其中肖特基二极管包括由金属层和半导体聚合物材料层构成的层叠。
7.按照权利要求6的矩阵显示器,其中图像元素包括半导体聚合物材料的发光层,所述半导体聚合物材料具有与肖特基二极管的半导体聚合物材料大致相同的成分。
8.按照权利要求1的矩阵显示器,其中所述去耦装置包括机电开关。
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EP02075148.3 | 2002-01-15 | ||
EP02075148 | 2002-01-15 | ||
EP02078879.0 | 2002-09-19 | ||
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US (1) | US20050093848A1 (zh) |
EP (1) | EP1472676A1 (zh) |
JP (1) | JP2005515503A (zh) |
KR (1) | KR20040086273A (zh) |
CN (1) | CN1615505A (zh) |
AU (1) | AU2003201064A1 (zh) |
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US7012585B2 (en) | 2004-02-06 | 2006-03-14 | Eastman Kodak Company | OLED apparatus having improved fault tolerance |
KR100804639B1 (ko) * | 2005-11-28 | 2008-02-21 | 삼성전자주식회사 | 디스플레이 장치 구동 방법 |
DE102006030539B4 (de) * | 2006-06-23 | 2012-07-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Ansteuerung einer Passiv-Matrix-Anordnung organischer Leuchtdioden |
JP5144194B2 (ja) * | 2007-09-25 | 2013-02-13 | パナソニック株式会社 | 点灯装置、および照明器具 |
JP2010160200A (ja) * | 2009-01-06 | 2010-07-22 | Canon Inc | 表示装置及びその駆動方法 |
CN102142230B (zh) * | 2011-03-31 | 2012-11-21 | 广州杰赛科技股份有限公司 | Led扫描屏消隐方法、装置以及led扫描屏 |
CN105654899B (zh) * | 2016-03-17 | 2019-05-17 | 利亚德光电股份有限公司 | 显示电路及其控制方法 |
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GB1438963A (en) * | 1973-02-22 | 1976-06-09 | Secr Defence | Electroluminescent display panels |
JPS6059389A (ja) * | 1983-09-12 | 1985-04-05 | シャープ株式会社 | 液晶表示装置の駆動回路 |
US5479280A (en) * | 1992-12-30 | 1995-12-26 | Goldstar Co., Ltd. | Active matrix for liquid crystal displays having two switching means and discharging means per pixel |
JPH09115673A (ja) * | 1995-10-13 | 1997-05-02 | Sony Corp | 発光素子又は装置、及びその駆動方法 |
US5751263A (en) * | 1996-05-23 | 1998-05-12 | Motorola, Inc. | Drive device and method for scanning a monolithic integrated LED array |
US20030151570A1 (en) * | 2001-10-19 | 2003-08-14 | Lechevalier Robert E. | Ramp control boost current method |
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2003
- 2003-01-10 WO PCT/IB2003/000047 patent/WO2003060865A1/en not_active Application Discontinuation
- 2003-01-10 US US10/501,168 patent/US20050093848A1/en not_active Abandoned
- 2003-01-10 AU AU2003201064A patent/AU2003201064A1/en not_active Abandoned
- 2003-01-10 JP JP2003560887A patent/JP2005515503A/ja active Pending
- 2003-01-10 CN CNA038022117A patent/CN1615505A/zh active Pending
- 2003-01-10 EP EP03729518A patent/EP1472676A1/en not_active Withdrawn
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KR20040086273A (ko) | 2004-10-08 |
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US20050093848A1 (en) | 2005-05-05 |
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