CN1604200A - 具有RuAl/NiAlB双晶种层的薄膜介质 - Google Patents
具有RuAl/NiAlB双晶种层的薄膜介质 Download PDFInfo
- Publication number
- CN1604200A CN1604200A CNA2004100824667A CN200410082466A CN1604200A CN 1604200 A CN1604200 A CN 1604200A CN A2004100824667 A CNA2004100824667 A CN A2004100824667A CN 200410082466 A CN200410082466 A CN 200410082466A CN 1604200 A CN1604200 A CN 1604200A
- Authority
- CN
- China
- Prior art keywords
- layer
- nialb
- rual
- crystal seed
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 230000009977 dual effect Effects 0.000 title abstract 3
- 230000005291 magnetic effect Effects 0.000 claims abstract description 39
- 239000010408 film Substances 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims description 39
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims description 6
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims description 5
- 239000010952 cobalt-chrome Substances 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910000531 Co alloy Inorganic materials 0.000 abstract description 2
- 229910000943 NiAl Inorganic materials 0.000 description 9
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 9
- 239000011651 chromium Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910015372 FeAl Inorganic materials 0.000 description 4
- 238000012797 qualification Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910017141 AlTa Inorganic materials 0.000 description 2
- 229910017150 AlTi Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- YTPMCWYIRHLEGM-BQYQJAHWSA-N 1-[(e)-2-propylsulfonylethenyl]sulfonylpropane Chemical compound CCCS(=O)(=O)\C=C\S(=O)(=O)CCC YTPMCWYIRHLEGM-BQYQJAHWSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- -1 Ni3P Chemical compound 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
本发明披露了一种包括RuAl/NiAlB双晶种层的用于磁性薄膜记录介质的薄膜结构。RuAl/NiAlB结构的应用使得晶粒大小降低，Mrt取向比(OR)增加，SNR提高，和在较高振幅下有较低的PW50。RuAl和NiAlB晶种层的每层都具有B2结晶结构。可以利用RuAl/NiAlB双晶种层来获得(200)择优面心取向的底层，及获得(11－20)择优面心取向的钴合金磁性膜。
Description
技术领域
本发明涉及磁性薄膜介质(magnetic thin film media)及其制造方法，更具体地涉及在底层(underlayer)之前具有晶种层(seed layer)结构的磁性薄膜盘片(disk)。
背景技术
图1显示了一种典型的现有技术的磁盘驱动(disk drive)系统10。在操作中，磁传动装置(transducer)20在盘片16上方飞转(fly)时由悬置(suspension)13支撑。磁传感器通常称为“磁头(head)”或“滑动件(slider)”是由执行写入磁转换(写入头23)和读出磁转换(读出头12)任务的元件组成。往来于读出头12和写入头23的电信号沿着附着于或嵌入悬置13中的导电路径(导线)14传送。磁性转换器20处于从盘16中心到读出和写入圆周轨线(track)(未标出)的径向距离不同的点上。盘片16连接到轴18，该轴由轴马达24驱动使得盘片16转动。盘片16包括其上沉积多种薄膜21的衬底26(substrate)。薄膜21包括铁磁材料，其中写入头23记录将信息编码的磁转换。
常规的盘片16由带高度抛光的NiP无电涂层(electroless coating)的AlMg衬底26组成。一般用玻璃作为衬底26。盘片16上的薄膜21通常包括沉积在衬底26上的铬或铬合金底层。薄膜中的铁磁层以钴、镍和铁的各种合金为基础。例如，一般使用的合金是CoPtCr。其它的元素如钽和硼也经常用在磁性合金中。保护外层(protective overcoat layer)用来提高耐磨性和抗蚀性。上述的三种薄膜盘片仍具有应用前景。不同的晶种层、多重(multiple)底层和层压磁性膜都在现有技术进行了说明。
特别是，已经建议晶种层与非金属衬底材料如玻璃一同使用。通常晶种层是较薄的层，其是在衬底上沉积的最初的薄膜，接下来是底层。所提出的用作晶种层的材料包括铬、钛、钽、Ni3P、MgO、碳、钨、AlN、FeAl、RuAl和NiAl。在Bian等申请的美国专利5,789,056中描述了CrTi晶种层的应用。所提及的底层是Cr、CrV和CrTi。
在Chen等人的美国专利6,010,795中描述了具有表面氧化的晶种层(如NiP)、含Cr的次底层(sub-underlayer)、NiAl或FeAl底层和在NiAl或FeAl底层上的含Cr中间层的磁性记录介质。所述的底层具有(200)结晶学取向(crystallographic orientation)。
Lee等人的美国专利5,800,931公开了MgO晶种层。使用了B2结构的底层，优选NiAl或FeAl底层，及任选的介于底层和磁性层之间的Cr或Cr合金中间层。
在公开的Bian等的美国申请20010024742中描述了直接沉积在预晶种层(pre-seed layer)上的RuAl晶种层，和RuAl之后任选的NiAl层。该双层结构能通过减少形成晶种层所要求的Ru的量而降低成本。Ru是一种昂贵的元素，因此减少所需要的Ru的量能降低成本。在双层结构中RuAl晶种层确定了晶粒大小和取向，随后沉积的NiAl遵循已建立的晶格(pattern)。
需要持续提高磁记录性能以进一步增加磁介质的面记录密度(arealrecording density)。
发明内容
本发明的发明人披露了一种包括RuAl/NiAlB双晶种层的磁性薄膜记录介质。使用RuAl/NiAlB结构使得晶粒大小降低，Mrt取向比(OR)增加，SNR提高和在较高振幅(amplitude)下有较低的PW50。RuAl和NiAlB晶种层每层都具有B2结晶学结构。可以利用RuAl/NiAlB双晶种层来获得具有择优面心取向(preferred in-plane orientation)(200)的底层，及获得(11-20)择优面心取向的钴合金磁性层。
附图说明
图1是显示现有技术在盘片驱动中磁头和相关组件的关系的代表性说明图。
图2是本发明用于磁性薄膜盘片优选实施方式的层结构的说明图。
具体实施方式
参照图2来说明在磁性薄膜盘片16的优选实施方式中的薄膜层，该盘片包括本发明的双晶种层。本发明的双晶种层优选与预晶种层一起使用。预晶种层用溅射直接沉积在可以是玻璃或任何其它合适的材料或表面的衬底表面26上。优选预晶种层31是CrTi合金的，更优选是CrTi50的无定形层或纳米晶(nanocrystalline)层。无定形或纳米晶的AlTa、CrTa或AlTi也被认为是用作预晶种层31的优选材料。CrTi、AlTa、CrTa或AlTi预晶种层的使用改进了晶粒大小、晶粒分布、面心结晶学取向、矫顽性(coercivity)和SNR。
本发明的双层晶种层包括RuAl的结晶层32A，接下来是NiAlB的结晶层32B。RuAl层在无定形预晶种层上生长为B2结晶学结构。NiAlB随之外延生长(epitaxially)成B2结晶学结构。硼加入到NiAl中减小了NiAlB的晶粒大小，该晶粒大小减少的晶粒能保留在之后的结晶层中。优选的组成包括2至5原子百分比(at.％)的硼，镍和铝的量几乎相等，但镍和铝的量相差几个原子百分比也可以接受。更优选的组成是NiAl48B2。RuAl比NiAlB更贵些，因此双层的优点之一是可以使RuAl层非常薄，节省高成本的RuAl。
在NiAlB层32B之后是一层或多层的底层33。底层通常是铬合金。优选的底层是CrTi，更优选的底层是CrTi20。当使用CrTi时，铬基底层33也可以很薄。
已知可以通过首先分别沉积具有(112)或(200)择优取向的底层，以生长(10-10)或(11-20)择优面心取向的钴合金磁性薄膜。已单独使用B2结晶学结构的RuAl晶种层，以获得(200)择优面心取向的底层和(11-20)择优面心取向的钴合金磁性层。当在RuAl之后使用时，加入NiAlB不改变取向。然而，使用NiAlB而无RuAl，会趋于生成目标取向比大于1的介质所不希望的(10-10)取向。优选具体实施的盘片结构采用圆周纹理(circumferentially texture)的衬底和取向比大于1。
图2显示底层33之后的磁性层体(magnetic layer stack)34。最后一层是保护外层35。磁性层体34包括任意多种类的单层或多层，其中至少一层必须是铁磁层。通常所用的铁磁合金的例子是CoPtCr、CoPtCrTa和CoPtCrB。层压的磁性层和反铁磁耦合(antiferromagnetically coupled)磁性层可以和本发明的晶种双层一起使用。可以使用开始层(onsetlayer)。优选实施方式使用CoCr/隔离层(spacer)/CoPtCrB的磁性层体34，更优选实施方式使用CoCr10/Ru/CoPt12Cr18B8的磁性层体34。
所选的实验盘片的磁性性能的实验数据列于表1中。其它层使用上面给出的优选的NiAl48B2合金和最优选的材料和组成。盘片3采用RuAl而没有其它晶种层来说明加入NiAlB层的优点。
表1
| 盘片 | RuAl的厚度(nm) | NiAlB的厚度(nm) | Mrt OR | DC SNR(dB) | SNR@310KBPI(Db) | PW50(nm) | LFTAA(mv) |
| 1 | 5.7 | 8.6 | 1.43 | 33.9 | 29.3 | 101.5 | 1.193 |
| 2 | 8.6 | 5.7 | 1.39 | 34.1 | 29.3 | 101.3 | 1.186 |
| 3 | 17.2 | 0 | 1.27 | 33.7 | 29.1 | 101.9 | 1.162 |
具有本发明的RuAl/NiAlB双晶种层的盘片比RuAl盘片具有显著较高的Mrt OR。其SNR增加，在较高振幅下PW50较低。
双晶种层的总厚度只需要足够确立良好的结晶学取向。厚度的上限将取决于随厚度而增加的晶粒大小的变化趋势。NiAlB层的厚度可以比RuAl厚。表2显示了NiAlB层厚度恒定为8.6nm，所用的四个不同厚度的RuAl的Mrt取向比(OR)。随着RuAl厚度减少Mrt OR稍有增加。
表2
| RuAl的厚度(nm) | 1.7 | 2.3 | 4.8 | 8.3 |
| Mrt OR | 1.45 | 1.46 | 1.43 | 1.40 |
正如本领域技术人员所知的，上面给出的原子百分比组成没有考虑不可避免地存在于薄膜内的少量杂质。针对具体实施方式对本发明进行了描述，但对本领域的技术人员来说，包含RuAl/NiAlB的双层结构的其它用途和应用是明显的。
Claims (20)
1.一种磁性薄膜层结构，包含：
RuAl层；
外延沉积在RuAl层上的NiAlB层；和
NiAlB层之后沉积的铁磁层。
2.权利要求1所述的磁性薄膜层结构，其中所述NiAlB具有大约2至5原子百分比的硼，余下的一般为镍和铝。
3.权利要求2所述的磁性薄膜层结构，其中所述NiAlB具有大约50原子百分比的镍，48原子百分比的铝和2原子百分比的硼。
4.权利要求1所述的磁性薄膜层结构，还包含衬底和在RuAl层之前沉积在衬底上的预晶种层CrTi。
5.权利要求1所述的磁性薄膜层结构，其中所述衬底是圆周纹理的玻璃。
6.权利要求1所述的磁性薄膜层结构，还包含沉积在NiAlB层上的CrTi底层。
7.权利要求1所述的磁性薄膜层结构，还包含含有被隔离层分开的CoCr层和CoPtCrB层的磁性层体。
8.权利要求7所述的磁性薄膜层结构，其中所述隔离层是钌。
9.一种磁性薄膜盘片，其包含：
无定形或纳米晶的预晶种层；
沉积在预晶种层上的具有B2结晶学结构的RuAl晶种层；
沉积在RuAl层上的具有B2结晶学结构的NiAlB晶种层；和
在NiAlB层上方的至少一铁磁层。
10.权利要求9所述的磁性薄膜盘片，其中所述NiAlB具有大约2至5原子百分比的硼，余下的一般为镍和铝。
11.权利要求10所述的磁性薄膜盘片，其中所述NiAlB具有大约2原子百分比的硼。
12.权利要求9所述的磁性薄膜盘片，还包含衬底，并且其中预晶种层是沉积在衬底上的CrTi。
13.权利要求9所述的磁性薄膜盘片，还包含在铁磁层之前沉积在NiAlB层上的CrTi底层。
14.权利要求9所述的磁性薄膜盘片，其中所述铁磁层是CoPtCrB，并且在其之前是隔离层和形成磁性层体的CoCr层。
15.一种磁盘驱动，包含：
包括读出头和写入头的磁传感器；
在磁盘上方支撑磁传感器的悬置；和
包括RuAl/NiAlB双晶种层的磁盘。
16.权利要求15所述的磁盘驱动，其中所述NiAlB具有大约2至5原子百分比的硼，余下的一般为镍和铝。
17.权利要求16所述的磁盘驱动，其中所述NiAlB具有大约50原子百分比的镍，48原子百分比的铝和2原子百分比的硼。
18.权利要求15所述的磁盘驱动，其中所述磁盘还包含圆周纹理的衬底，并且磁盘的Mrt取向比大于1。
19.权利要求15所述的磁盘驱动，其中所述磁盘还包含沉积在NiAlB层上的CrTi底层。
20.权利要求15所述的磁盘驱动，其中所述磁盘还包含包括被隔离层分开的CoCr层和CoPtCrB层的磁性层体。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/676,735 US6863993B1 (en) | 2003-09-30 | 2003-09-30 | Thin film media with a dual seed layer of RuAI/NiAIB |
| US10/676,735 | 2003-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1604200A true CN1604200A (zh) | 2005-04-06 |
| CN1322494C CN1322494C (zh) | 2007-06-20 |
Family
ID=34218172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100824667A Expired - Fee Related CN1322494C (zh) | 2003-09-30 | 2004-09-22 | 具有RuAl/NiAlB双晶种层的薄膜介质 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6863993B1 (zh) |
| JP (1) | JP2005108419A (zh) |
| CN (1) | CN1322494C (zh) |
| SG (1) | SG110172A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108182958A (zh) * | 2012-10-11 | 2018-06-19 | 海德威科技公司 | 用于多层磁性材料的改良式晶种层 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7651794B2 (en) * | 2005-04-28 | 2010-01-26 | Hitachi Global Storage Technologies Netherlands B.V. | Adhesion layer for thin film magnetic recording medium |
| US20070019328A1 (en) * | 2005-07-25 | 2007-01-25 | Mohammad Mirzamaani | Laminated magnetic recording media with two sublayers in the lower magnetic layer |
| US20080131735A1 (en) * | 2006-12-05 | 2008-06-05 | Heraeus Incorporated | Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording |
| US8941950B2 (en) | 2012-05-23 | 2015-01-27 | WD Media, LLC | Underlayers for heat assisted magnetic recording (HAMR) media |
| US9177585B1 (en) | 2013-10-23 | 2015-11-03 | WD Media, LLC | Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording |
| US11398247B1 (en) | 2021-06-21 | 2022-07-26 | Western Digital Technologies, Inc. | Magnetic recording media with oxidized pre-seed layer |
| US11810605B2 (en) | 2021-09-29 | 2023-11-07 | Western Digital Technologies, Inc. | Magnetic recording media with tungsten pre-seed layer |
| US11990163B2 (en) * | 2022-06-30 | 2024-05-21 | Western Digital Technologies, Inc. | Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5800931A (en) * | 1994-09-29 | 1998-09-01 | Carnegie Mellon University | Magnetic recording medium with a MgO sputter deposited seed layer |
| US5789056A (en) * | 1997-01-30 | 1998-08-04 | International Business Machines Corporation | Thin film magnetic disk with chromium-titanium seed layer |
| JP2989169B2 (ja) * | 1997-08-08 | 1999-12-13 | 日立金属株式会社 | Ｎｉ−Ａｌ系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
| US6143388A (en) * | 1997-11-24 | 2000-11-07 | International Business Machines Corporation | Thin film disk with onset layer |
| US6753101B1 (en) * | 1999-06-08 | 2004-06-22 | Fujitsu Limited | Magnetic recording medium, magnetic storage apparatus, recording method and method of producing magnetic recording medium |
| US6586116B1 (en) * | 2000-02-09 | 2003-07-01 | Hitachi Global Storage Technologies Netherlands, B.V. | Nonmetallic thin film magnetic recording disk with pre-seed layer |
| US6740397B1 (en) * | 2000-05-24 | 2004-05-25 | Seagate Technology Llc | Subseedlayers for magnetic recording media |
| JP3577486B2 (ja) * | 2002-04-25 | 2004-10-13 | Ｈｏｙａ株式会社 | 磁気記録媒体及びその製造方法 |
-
2003
- 2003-09-30 US US10/676,735 patent/US6863993B1/en not_active Expired - Lifetime
-
2004
- 2004-09-22 CN CNB2004100824667A patent/CN1322494C/zh not_active Expired - Fee Related
- 2004-09-29 SG SG200405521A patent/SG110172A1/en unknown
- 2004-09-30 JP JP2004287707A patent/JP2005108419A/ja not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108182958A (zh) * | 2012-10-11 | 2018-06-19 | 海德威科技公司 | 用于多层磁性材料的改良式晶种层 |
| CN108182958B (zh) * | 2012-10-11 | 2021-10-08 | 台湾积体电路制造股份有限公司 | 用于多层磁性材料的改良式晶种层 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG110172A1 (en) | 2005-04-28 |
| US20050069730A1 (en) | 2005-03-31 |
| JP2005108419A (ja) | 2005-04-21 |
| US6863993B1 (en) | 2005-03-08 |
| CN1322494C (zh) | 2007-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6567236B1 (en) | Antiferromagnetically coupled thin films for magnetic recording | |
| JP4169663B2 (ja) | 垂直磁気記録媒体 | |
| US6562489B2 (en) | Magnetic recording medium and magnetic storage apparatus | |
| US5763071A (en) | High areal density magnetic recording medium with dual magnetic layers | |
| US20130045396A1 (en) | Ferromagnetically coupled magnetic recording media | |
| US7871718B2 (en) | Perpendicular magnetic recording medium and magnetic storage apparatus | |
| US20090257147A1 (en) | Perpendicular magnetic recording medium and magnetic recording apparatus | |
| US7824785B2 (en) | Perpendicular magnetic recording medium and magnetic storage apparatus | |
| CN1577507A (zh) | 用于磁记录的磁各向异性可调的层叠磁性薄膜 | |
| US7964297B2 (en) | Adhesion layer for thin film magnetic recording medium | |
| CN1322494C (zh) | 具有RuAl/NiAlB双晶种层的薄膜介质 | |
| US6593009B2 (en) | Magnetic thin film media with a pre-seed layer of CrTi | |
| US7976964B2 (en) | Disk drive with laminated magnetic thin films with sublayers for magnetic recording | |
| US6852430B2 (en) | Magnetic thin film media with a pre-seed layer of CrTi | |
| US6613460B1 (en) | Magnetic recording medium and magnetic storage apparatus | |
| US6475611B1 (en) | Si-containing seedlayer design for multilayer media | |
| US6872478B2 (en) | Magnetic thin film media with a pre-seed layer of CrTiAl | |
| US20060210834A1 (en) | Laminated magnetic thin films with sublayers for magnetic recording | |
| US6858331B1 (en) | Magnetic thin film media with a bi-layer structure of CrTi/Nip | |
| US7419730B2 (en) | Magnetic recording disk with antiferromagnetically coupled master layer including copper | |
| US20060093866A1 (en) | Magnetic thin film media with an underlayer of CrMoZr, CrMoNb or CrMoMn | |
| US6878460B1 (en) | Thin-film magnetic recording media with dual intermediate layer structure for increased coercivity | |
| US20130235490A1 (en) | Perpendicular magnetic recording media with seed layer structure containing ruthenium (Ru) | |
| US6821654B1 (en) | CrMoTa underlayer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070620 Termination date: 20091022 |