SG110172A1 - Thin film media with a dual seed layer of rual/nialb - Google Patents

Thin film media with a dual seed layer of rual/nialb

Info

Publication number
SG110172A1
SG110172A1 SG200405521A SG200405521A SG110172A1 SG 110172 A1 SG110172 A1 SG 110172A1 SG 200405521 A SG200405521 A SG 200405521A SG 200405521 A SG200405521 A SG 200405521A SG 110172 A1 SG110172 A1 SG 110172A1
Authority
SG
Singapore
Prior art keywords
nialb
rual
thin film
seed layer
film media
Prior art date
Application number
SG200405521A
Other languages
English (en)
Inventor
Frances Doerner Mary
Tang Kai
Xiao Qi-Fan
Original Assignee
Hitachi Global Storage Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Global Storage Tech filed Critical Hitachi Global Storage Tech
Publication of SG110172A1 publication Critical patent/SG110172A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/672—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having different compositions in a plurality of magnetic layers, e.g. layer compositions having differing elemental components or differing proportions of elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
SG200405521A 2003-09-30 2004-09-29 Thin film media with a dual seed layer of rual/nialb SG110172A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/676,735 US6863993B1 (en) 2003-09-30 2003-09-30 Thin film media with a dual seed layer of RuAI/NiAIB

Publications (1)

Publication Number Publication Date
SG110172A1 true SG110172A1 (en) 2005-04-28

Family

ID=34218172

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200405521A SG110172A1 (en) 2003-09-30 2004-09-29 Thin film media with a dual seed layer of rual/nialb

Country Status (4)

Country Link
US (1) US6863993B1 (zh)
JP (1) JP2005108419A (zh)
CN (1) CN1322494C (zh)
SG (1) SG110172A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7651794B2 (en) * 2005-04-28 2010-01-26 Hitachi Global Storage Technologies Netherlands B.V. Adhesion layer for thin film magnetic recording medium
US20070019328A1 (en) * 2005-07-25 2007-01-25 Mohammad Mirzamaani Laminated magnetic recording media with two sublayers in the lower magnetic layer
US20080131735A1 (en) * 2006-12-05 2008-06-05 Heraeus Incorporated Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording
US8941950B2 (en) 2012-05-23 2015-01-27 WD Media, LLC Underlayers for heat assisted magnetic recording (HAMR) media
US9490054B2 (en) * 2012-10-11 2016-11-08 Headway Technologies, Inc. Seed layer for multilayer magnetic materials
US9177585B1 (en) 2013-10-23 2015-11-03 WD Media, LLC Magnetic media capable of improving magnetic properties and thermal management for heat-assisted magnetic recording
US11398247B1 (en) 2021-06-21 2022-07-26 Western Digital Technologies, Inc. Magnetic recording media with oxidized pre-seed layer
US11810605B2 (en) 2021-09-29 2023-11-07 Western Digital Technologies, Inc. Magnetic recording media with tungsten pre-seed layer
US11990163B2 (en) * 2022-06-30 2024-05-21 Western Digital Technologies, Inc. Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5800931A (en) * 1994-09-29 1998-09-01 Carnegie Mellon University Magnetic recording medium with a MgO sputter deposited seed layer
US5789056A (en) * 1997-01-30 1998-08-04 International Business Machines Corporation Thin film magnetic disk with chromium-titanium seed layer
JP2989169B2 (ja) * 1997-08-08 1999-12-13 日立金属株式会社 Ｎｉ−Ａｌ系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体
US6143388A (en) * 1997-11-24 2000-11-07 International Business Machines Corporation Thin film disk with onset layer
US6753101B1 (en) * 1999-06-08 2004-06-22 Fujitsu Limited Magnetic recording medium, magnetic storage apparatus, recording method and method of producing magnetic recording medium
US6586116B1 (en) * 2000-02-09 2003-07-01 Hitachi Global Storage Technologies Netherlands, B.V. Nonmetallic thin film magnetic recording disk with pre-seed layer
US6740397B1 (en) * 2000-05-24 2004-05-25 Seagate Technology Llc Subseedlayers for magnetic recording media
JP3577486B2 (ja) * 2002-04-25 2004-10-13 Ｈｏｙａ株式会社 磁気記録媒体及びその製造方法

Also Published As

Publication number Publication date
US20050069730A1 (en) 2005-03-31
CN1604200A (zh) 2005-04-06
JP2005108419A (ja) 2005-04-21
US6863993B1 (en) 2005-03-08
CN1322494C (zh) 2007-06-20

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