CN1598983A - T-shaped beam parallel plate micromechanical variable capacitor and manufacturing process thereof - Google Patents
T-shaped beam parallel plate micromechanical variable capacitor and manufacturing process thereof Download PDFInfo
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- CN1598983A CN1598983A CN 200410041934 CN200410041934A CN1598983A CN 1598983 A CN1598983 A CN 1598983A CN 200410041934 CN200410041934 CN 200410041934 CN 200410041934 A CN200410041934 A CN 200410041934A CN 1598983 A CN1598983 A CN 1598983A
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Abstract
T-shaped girder clinograph micro-machinery variable capacitance and its production technique make use of the structure of the T-shaped girder and clinograph to realize the micro-machinery variable capacitance, which makes use of the change of the voltage between the two clinographs to realize the change of the capacitance. Its layered structure from the upper to the lower is as follows: upper plank aluminium (1), dielectric layer (2), lower plank aluminium (3), insulating layer (4), electric shielding layer (5) and silicon substrate (6). The T-shaped girder (7) is corresponding to the upper plank aluminium (1). The concrete preduction method is as follows: preparing the substrate, preparing the oxidizing layer, adulterating the p+ polysilicon film on the field oxygen, preparing the insulating medium of SiO2 film, making the lower plate electrode of the capacitance of the first layer interconnecting metallic aluminium, preparing the PSG sacrificial layer, preparing the upper plate electrode, releasing the sacrificial layer and depositing the passive film. The variable capacitance is featured by simple structure and high reliability and its preparation technique is compatible to the main stream of CMOS.
Description
Technical field
The present invention utilizes tee girder and parallel-plate structure to realize a micro-mechanical variable capacitor, belongs to the technical field that microelectronic component is made.
Background technology
Because in person-to-person communication and the miniaturization of military communication neighborhood system volume, high reliability and the demand that reduces cost, also carried out research to MEMS (micromechanics) device in RF application.Many modern radio systems need to have wide amplitude modulation, low noise high-quality voltage-controlled oscillator (VCO) in the frequency range of several gigahertzs, its adjustable range must be not less than the frequency range due to the flow-route and temperature variation, and adjustability is provided by a variable capacitance usually.Because the variable capacitance that is integrated on the chip is difficult to realize high quality factor that variable capacitance is realized with outer member usually.Low noise just means the circuit that must have high quality factor, the inductance and the variable capacitance that also just need high quality factor, integrated VCO relies on variable capacitance diode usually and realizes frequency adjustment, yet in low noise applications, the quality factor of integrating varactor is not enough big, therefore, usually must select another kind of variable capacitance.
For a long time because the structure particularity of tee girder parallel-plate MEMS variable capacitance, the research and development of such device only are confined to scientific research field.The large-scale production that tee girder parallel-plate MEMS variable capacitor structure is applied to integrated circuit exists and a series of obstacles such as incompatible, the repeatable poor reliability of main flow technology, production cost height.
Summary of the invention
Technical problem: the purpose of this invention is to provide a kind of tee girder parallel-plate micro-mechanical variable capacitor and manufacturing process thereof of using integrated circuit technology to realize.The performance of this variable capacitance is relatively good, and all has preferably in all many-sides such as material, technology, reliability, repeatability and production costs and to improve, for radio frequency and microwave circuit provide a kind of reasonable variable capacitance.
Technical scheme: tee girder parallel-plate MEMS variable capacitance is different from the transfiguration pattern of traditional variable capacitance diode, this structure utilizes the form of change in voltage between the parallel-plate to realize changes in capacitance, its layer structure order from top to bottom is: go up step aluminium, dielectric layer, bottom crown aluminium, insulating barrier, conductive shielding layer, silicon substrate; The tee girder that is provided with in the outside of last step aluminium symmetry.Tee girder is made of tee girder linking arm and tee girder anchor district, has the groove of " U " shape in the centre of tee girder linking arm, and tee girder anchor district is positioned at the groove of this " U " shape, and the bottom in tee girder anchor district is provided with an anchor block.
The form that tee girder parallel-plate MEMS variable capacitor structure of the present invention is used parallel plate capacitor realizes top-down tee girder parallel-plate MEMS variable capacitor structure, this structure is easy to realize different electric capacity number and position by using different etching domains, no matter how what and position shape of electric capacity number all can be determined by a lithography step.The concrete grammar of realizing this structure is (is example with CMOS):
A, substrate preparation: with general CMOS prepared substrate,
The preparation of b, oxide layer: the preparation of cmos circuit midfield oxygen, thickness is 0.2-3.0um,
C, above the oxygen on the scene deposit doping p+ polysilicon membrane promptly " polysilicon gate " make screen, the spin coating photoresist develops, and is etched into the pattern of regulation, thickness is 0.3-0.8um, resistance is 10-100 Ω/sq;
D, dielectric SiO
2The preparation of film: promptly prepare the layer insulation medium that is used in the circuit between the multilayer wiring two-layer between thickness be 0.2-3.0um, be deposited on the metal lead wire that plays circuit interconnection effect above the dielectric film and all etch away, guarantee SiO at last
2The thickness of film is 0.5-8um;
The metal aluminium lamination of the ground floor interconnection of e, deposit is as the bottom crown of capacitor, and thickness is 0.2-2.0um, and the spin coating photoresist develops, and is etched into the pattern of regulation, (carving same photolithography plate of ground floor aluminum metal interconnection line in the circuit)
The preparation of f, PSG (phosphorosilicate glass) sacrifice layer: deposit PSG, thickness are 0.2-3.5um, and the spin coating photoresist develops, and anchor district etching is come out, and the anchor district will be made in SiO
2Go up influence to guarantee mechanical strength and to avoid being subjected to sacrifice layer to discharge;
G, the preparation of going up step aluminium: the last layer of aluminum of deposit, thickness is 0.2-1.5um, fills up the anchor district, the spin coating photoresist develops, and is etched into the pattern of regulation.Be provided with many apertures in the middle of (carving same photolithography plate of second layer aluminum metal interconnection line in the circuit), so that the release of sacrifice layer;
The release of h, sacrifice layer; Use phosphorosilicate glass etching process corrosion sacrifice layer;
I, deposit passivating film: adopt the deposit of CMOS standard technology.
Based on the Promethean invention of this structure and numerous advantageous characteristic that should invention, distinguish whether to be the standard of this structure as follows:
(a) utilize the form of parallel-plate to realize changes in capacitance, be respectively step-dielectric layer (or air layer or air and medium mixed layer)-bottom crown-insulating barrier-conductive shielding layer-silicon substrate from top to bottom.
(b) tie-beam partly is novel tee girder structure.
(c) manufacturing process and silicon CMOS process compatible are made simple and can be in enormous quantities.
The structure that satisfies above three conditions is the structure of this tee girder parallel-plate MEMS variable capacitance.
When up and down adding certain voltage between the step, last step is owing to the effect of electrostatic attraction moves downward certain distance, thereby makes capacitance change.Make a general survey of the technical process of this tee girder parallel-plate of whole realization MEMS variable capacitor structure, wherein without any special material is not introduced any complicated special technology yet, and CMOS, the BiCMOS technology with main flow is compatible mutually fully.Therefore, the tee girder parallel-plate MEMS variable capacitor structure of using among the present invention can improve the performance that traditional variable capacitance diode uses in integrated circuit, and then can promote the development of IC industry.
Beneficial effect: the tee girder parallel-plate MEMS variable capacitor structure among the present invention, based on the implementation method of main stream of CMOS, BiCMOS technology, repeatable reliability all is greatly improved, and production cost significantly reduces.Simultaneously, tee girder parallel-plate MEMS variable capacitor structure can be realized variable capacitance more easily than previous methods, and realize the number of all types electric capacity and position only need to determine a lithography step, really realized the control easily and effectively of electric capacity number and position under the unified agent structure.
Therefore, realize that with the MEMS technology tunable capacitor has outstanding advantage.Be easy to realize high reliability, high duplication, the low production cost of device, well satisfy the basic demand of integrated circuit device.So the structure of MEMS tunable capacitor has using value and vast market potentiality preferably.
Tee girder parallel-plate MEMS variable capacitance has following major advantage: one, this is relatively simple for structure, and reliability is easy to realize than higher; Two, manufacture craft of this device and main stream of CMOS process compatible, in integrated circuit, need not add special process and can realize this structure, be convenient to make together with circuit, thereby entire circuit is greatly reduced, only need in the end in addition together simple postprocessing working procedures, thereby make the manufacturing of this device not influence the performance of circuit; Three, this structural volume is small, has only the hundreds of micron, electrical length is smaller, thereby is fit to the radio frequency of high frequency and the simulation process of microwave signal, is particularly suitable for constituting the carrier wave of radio frequency and microwave signal and the generation circuit and the multiband filter circuit of local oscillation signal.
Description of drawings
Fig. 1 is the mechanical structure schematic diagram of tee girder parallel-plate MEMS variable capacitance.
Fig. 2 is the partial structurtes generalized section of tee girder parallel-plate MEMS variable capacitance thickness direction.
Fig. 3 is the equivalent circuit structure schematic diagram of tee girder parallel-plate MEMS variable capacitance.
The structural representation of the tee girder part of the tee girder parallel-plate MEMS variable capacitance that the CMOS technology that is based on Fig. 4 realizes.
Fig. 5 is the regulating characteristics figure of tee girder parallel-plate MEMS variable capacitance.
Have among the above figure: go up step aluminium 1, dielectric layer 2, bottom crown aluminium 3, insulating barrier 4, conductive shielding layer 5, silicon substrate 6, tee girder 7, tee girder linking arm 7.1, tee girder anchor district 7.2, the groove 7.3 of " U " shape, anchor block 7.21.
Embodiment
Tee girder parallel-plate MEMS variable capacitor structure of the present invention, we have proposed the implementation method based on CMOS technology, this structure utilizes the form of change in voltage between the parallel-plate to realize changes in capacitance, its layer structure order from top to bottom is: go up step aluminium 1, dielectric layer 2, bottom crown aluminium 3, insulating barrier 4, conductive shielding layer 5, silicon substrate 6; Be provided with tee girder 7 in the outside of last step aluminium 1 symmetry.Tee girder 7 is made of tee girder linking arm 7.1 and tee girder anchor district 7.2, has the groove 7.3 of " U " shape in the centre of tee girder linking arm 7.1, and tee girder anchor district 7.2 is positioned at the groove 7.3 of this " U " shape.The bottom in ellbeam anchor district 7.2 is provided with an anchor block 7.2.1.
We have designed the concrete technology based on the tee girder parallel-plate MEMS variable capacitance of CMOS technology, and will use this technology manufacturing to have the tee girder parallel-plate MEMS variable capacitance of better characteristic.
As Fig. 2.Concrete processing step and parameter are as follows:
1, substrate preparation and circuit is fabricated to typical C MOS technology;
2, the preparation of oxide layer, (preparation of cmos circuit midfield oxygen), thickness is 0.2-3.0um, representative value is 0.7um;
3, deposit doping p+ polysilicon membrane (polysilicon gate) above the oxygen on the scene is made screen in this capacitor.The spin coating photoresist develops, and is etched into the pattern of regulation.(carving same photolithography plate of polysilicon gate in the circuit) thickness is 0.3-0.8um, and representative value is 0.5um; Resistance is 10-100 Ω/sq, and representative value is 30 Ω/sq;
4, dielectric SiO
2Thickness was 0.2-3.0um between the preparation of film (being used for the layer insulation medium between the multilayer wiring in the circuit) was two-layer, and representative value is 1um; Be deposited on the metal lead wire that plays circuit interconnection effect above the dielectric film and all etch away (by the circuit technology decision), guarantee SiO at last
2The thickness of film is 0.5-8um, and representative value is 4um;
5, the metal aluminium lamination of the ground floor of deposit interconnection is as the bottom crown of capacitor, and thickness is 0.2-2.0um, and representative value is 0.6um; The spin coating photoresist develops, and is etched into the pattern of regulation.(carving same photolithography plate of ground floor aluminum metal interconnection line in the circuit);
6, the preparation of PSG sacrifice layer.Deposit PSG, thickness are 0.2-3.5um, and representative value is 1.5um, and the spin coating photoresist develops, and anchor district etching is come out.The anchor district will be made in SiO
2Go up influence to guarantee mechanical strength and to avoid being subjected to sacrifice layer to discharge;
7, go up the preparation of step aluminium.The last layer of aluminum of deposit.Thickness is 0.2-1.5um, and typical thickness is 0.6um.Fill up the anchor district, the spin coating photoresist develops, and is etched into the pattern of regulation.(carving same photolithography plate of second layer aluminum metal interconnection line in the circuit).The centre is provided with many apertures, so that the release of sacrifice layer;
8, the release of sacrifice layer; Use phosphorosilicate glass etching process corrosion sacrifice layer;
9, deposit passivating film: adopt the deposit of CMOS standard technology.
The present invention proposes a kind of parallel-plate MEMS tunable capacitor of new T-shape girder construction, has the characteristics of high Q value and wide tuning range.By micromechanics, movably, the VVC voltage variable capacitance that metal plate is formed provides the raising of variable capacitance performance in the enough sheet.Be easy to realize high reliability, high duplication, the low production cost of device, well satisfy the basic demand of integrated circuit device.Therefore, tee girder parallel-plate MEMS variable capacitance has using value and vast market potentiality preferably.
This variable capacitor structure is fairly simple, reliability is than higher, manufacture craft of this device and main stream of CMOS process compatible, in integrated circuit, need not add special process and can realize this structure, be convenient to make together with circuit, thereby entire circuit is greatly reduced, only need in the end in addition together simple postprocessing working procedures, thereby make the manufacturing of this device not influence the performance of circuit, volume is small, have only the hundreds of micron, electrical length is smaller, thereby is fit to the radio frequency of high frequency and the simulation process of microwave signal.
Claims (3)
1, a kind of tee girder parallel-plate micro-mechanical variable capacitor, it is characterized in that this structure utilizes the form of change in voltage between the parallel-plate to realize changes in capacitance, its layer structure order from top to bottom is: go up step aluminium (1), dielectric layer (2), bottom crown aluminium (3), insulating barrier (4), conductive shielding layer (5), silicon substrate (6); Be provided with tee girder (7) in the outside symmetry of last step aluminium (1).
2, tee girder parallel-plate micro-mechanical variable capacitor according to claim 1, it is characterized in that tee girder (7) is made of tee girder linking arm (7.1) and tee girder anchor district (7.2), have the groove (7.3) of " U " shape in the centre of tee girder linking arm (7.1), tee girder anchor district (7.2) is positioned at the groove (7.3) of this " U " shape, and the bottom in tee girder anchor district (7.2) is provided with an anchor block (7.2.1).
3, a kind of manufacture method as right 1 described tee girder parallel-plate micro-mechanical variable capacitor is characterized in that concrete manufacture method is as follows:
A, substrate preparation: with general CMOS prepared substrate,
The preparation of b, oxide layer: the preparation of cmos circuit midfield oxygen, the thickness representative value is 0.2-3.0um,
C, above the oxygen on the scene deposit doping p+ polysilicon membrane promptly " polysilicon gate " make screen, the spin coating photoresist develops, and is etched into the pattern of regulation, the thickness representative value is 0.3-0.8um, resistance is 10-100 Ω/sq;
D, dielectric SiO
2The preparation of film: promptly prepare the layer insulation medium that is used in the circuit between the multilayer wiring two-layer between the thickness representative value be 0.2-3.0um, be deposited on the metal lead wire that plays circuit interconnection effect above the dielectric film and all etch away, guarantee SiO at last
2The thickness of film is 0.5-8um;
The metal aluminium lamination of the ground floor interconnection of e, deposit is as the bottom crown of capacitor, and the thickness representative value is 0.2-2.0um, and the spin coating photoresist develops, and is etched into the pattern of regulation,
The preparation of f, phosphorosilicate glass sacrifice layer: deposit PSG, thickness are 0.2-3.5um, and the spin coating photoresist develops, and anchor district etching is come out, and the anchor district will be made in SiO
2Go up influence to guarantee mechanical strength and to avoid being subjected to sacrifice layer to discharge;
G, the preparation of going up step aluminium: the last layer of aluminum of deposit, typical thickness is 0.2-1.5um, fills up the anchor district, and the spin coating photoresist develops, and is etched into the pattern of regulation, and the centre is provided with many apertures, so that the release of sacrifice layer;
Phosphorosilicate glass etching process corrosion sacrifice layer is used in the release of h, sacrifice layer;
I, deposit passivating film adopt the deposit of CMOS standard technology.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2004100419346A CN100464383C (en) | 2004-09-10 | 2004-09-10 | T-shaped beam parallel plate micromechanical variable capacitor and manufacturing process thereof |
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| CNB2004100419346A CN100464383C (en) | 2004-09-10 | 2004-09-10 | T-shaped beam parallel plate micromechanical variable capacitor and manufacturing process thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999080B (en) * | 2008-04-14 | 2013-03-20 | 飞思卡尔半导体公司 | Spring member for use in a microelectromechanical systems sensor |
| CN103888886A (en) * | 2014-03-14 | 2014-06-25 | 上海先进半导体制造股份有限公司 | Manufacturing method for low-stress in-situ doped polycrystalline silicon films |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0627137A (en) * | 1992-07-08 | 1994-02-04 | Murata Mfg Co Ltd | Acceleration sensor |
| JPH09196682A (en) * | 1996-01-19 | 1997-07-31 | Matsushita Electric Ind Co Ltd | Angular velocity sensor and acceleration sensor |
| US20040031912A1 (en) * | 2001-10-31 | 2004-02-19 | Wong Marvin Glenn | Method of eliminating brownian noise in micromachined varactors |
| CN1453804A (en) * | 2003-05-23 | 2003-11-05 | 东南大学 | Transversely driven micromechanical variable condenser |
| CN2746519Y (en) * | 2004-09-10 | 2005-12-14 | 东南大学 | T-shaped beam and parallel plate micro-mechanical variable capacitor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999080B (en) * | 2008-04-14 | 2013-03-20 | 飞思卡尔半导体公司 | Spring member for use in a microelectromechanical systems sensor |
| CN103888886A (en) * | 2014-03-14 | 2014-06-25 | 上海先进半导体制造股份有限公司 | Manufacturing method for low-stress in-situ doped polycrystalline silicon films |
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