CN1591717A - Laminated electronic component and mfg method thereof - Google Patents
Laminated electronic component and mfg method thereof Download PDFInfo
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- CN1591717A CN1591717A CNA2004100576826A CN200410057682A CN1591717A CN 1591717 A CN1591717 A CN 1591717A CN A2004100576826 A CNA2004100576826 A CN A2004100576826A CN 200410057682 A CN200410057682 A CN 200410057682A CN 1591717 A CN1591717 A CN 1591717A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets
Abstract
A laminated electronic component comprises an outer electrode on the end plane of the electronic component body which is formed by alternately laminating a plurality of dielectric medium layers and inner electrode layers, one part of the dielectric medium layers in the dielectric medium layers have thickness greater than the thickness of other dielectric medium layers.
Description
Technical field
The present invention relates to laminate type electronic component and method for making thereof, particularly as multi-layer ceramic capacitor dielectric layer and interior electrode layer by the laminate type electronic component of thin layer, multiple stratification and method for making thereof.
Background technology
In recent years, as a kind of multi-layer ceramic capacitor of laminate type electronic component,, realized thin layer, the multiple stratification (for example the spy opens flat 11-251173) of dielectric layer and interior electrode layer for small-sized, high capacity.
But, laminate type electronic component in the past since the thin layerization of dielectric layer and interior electrode layer and interior electrode layer with respect to the extension of the area ratio/occupancy ratio of dielectric layer, calmodulin binding domain CaM between the dielectric layer diminishes gradually, produces the problem of the mechanical strength reduction of electronic unit main body thus.In addition, the thickness difference of dielectric layer thickness and interior electrode layer diminishes, in lamination procedure, because dielectric raw cook (green sheet) is difficult to absorb the step portion of internal electrode pattern, therefore behind the lamination or after burning till, can be created in the problem that the interlayer of electronic unit main body separates easily.
Summary of the invention
The objective of the invention is to, dielectric layer and interior electrode layer thin layer multiple stratification also can be improved the mechanical strength of electronic unit main body and suppress laminate type electronic component and the method for making thereof that interlayer produces separation even provide.
Laminate type electronic component of the present invention is at a plurality of dielectric layers of interaction cascading and interior electrode layer and have the laminate type electronic component of outer electrode on the end face of the electronic unit main body that forms, it is characterized in that a part of dielectric layer in the described dielectric layer is the dielectric layer bigger than other dielectric layer thickness.
Like this, even, also can improve the mechanical strength of electronic unit main body, and can suppress the separation of interlayer with dielectric layer and interior electrode layer thin layer multiple stratification.
In this laminate type electronic component, described thicker dielectric layer and described other the layer constituent ratio (number of plies of thick dielectric layer/other the number of plies of dielectric layer) of dielectric layer are preferably 1/5～1/20.
In addition, in the described laminate type electronic component, described thicker dielectric layer and described other dielectric layer are preferably homogeneous material.In addition, in that described other dielectric layer thickness is made as t1, when described thicker dielectric layer thickness is made as t2, preferably satisfy the relation of t2/t1 〉=1.2.
By like this material of thick dielectric layer and other dielectric layer being made as homogeneity, in addition thickness ratio is as above set, just can make other dielectric layer integrated, and then can improve intensity with thicker dielectric layer.
It is the situation of thin layer that the present invention is suitable for described other dielectric layer, and specifically, the dielectric layer thickness that is suitable for other is particularly suitable for the situation of 1～2 μ m below 3 μ m.In addition, below the preferred 2 μ m of the thickness of described interior electrode layer, preferred especially 0.1～1.8 μ m.
In addition, in the laminate type electronic component of the present invention, be made as φ 1 will constituting described other the average crystallite particle diameter of crystal grain of pottery of dielectric layer, when the average crystallite particle diameter of crystal grain that constitutes the pottery of described thicker dielectric layer is made as φ 2, preferably satisfy the relation of φ 2/ φ 1 〉=1.1, described interior electrode layer is preferably metal forming, and metal forming is preferably electroplating film.
In the described laminate type electronic component, because the particle diameter of the crystal grain of formation dielectric layer is big more, then dielectric dielectric constant is just high more, therefore be made as described scope by constituting dielectric average crystallite particle diameter, just can suppress the reduction of the electrostatic capacitance brought by thickening a part of dielectric layer thickness.
In addition, among the present invention,, then can form homogeneous, reduce uneven thickness, and can increase effective area, can also make interior electrode layer as thin as a wafer in addition if form interior electrode layer with electroplating film.
The feature of the method for making of laminate type electronic component of the present invention is, have operation that preparation contains the dielectric raw cook of dielectric medium powder and the thickness dielectric raw cook thicker than this dielectric raw cook at least, described dielectric raw cook and the described operation that forms internal electrode pattern on than the thick dielectric raw cook respectively, will form this internal electrode pattern described dielectric raw cook and described than the thick dielectric raw cook stacked and form the lamination formed body operation, cut this lamination formed body and the operation that forms electronic unit main body formed body and burn till.
According to this kind method for making, even with dielectric raw cook or internal electrode pattern thin layerization, owing to be inserted with the bigger dielectric raw cook of thickness, therefore can improve the imbedibility of the internal electrode pattern on the dielectric raw cook, can eliminate the ladder that causes by internal electrode pattern thus, even at lamination and after burning till, also can easily prevent leafing.
In addition, in the method for making of the present invention, described layer constituent ratio than thick dielectric raw cook and described dielectric raw cook (than the number of plies of the number of plies/dielectric raw cook of thick dielectric raw cook) is preferably 1/5～1/20, describedly be preferably homogeneous material than thick dielectric raw cook and described dielectric raw cook, when the thickness with described dielectric raw cook is made as tG1, when described thickness than the thick dielectric raw cook is made as tG2, preferably satisfy the relation of tG2/tG1 〉=1.2, average grain diameter at the dielectric medium powder that will constitute described dielectric raw cook is made as φ G1, when the average grain diameter that constitutes the dielectric medium powder of described thicker dielectric raw cook is made as φ G2, preferably satisfy the relation of φ G2/ φ G1 〉=1.1, internal electrode pattern is preferably metal forming, and metal forming is preferably electroplating film.
By as described, it is aforesaid size ratio (φ 2/ φ 1 〉=1.1) that the dielectric raw cook reaches than dielectric medium powder contained respectively in the thick dielectric raw cook, even then the dielectric raw cook of a part is thickeied, also can suppress percent of firing shrinkage, thus the internal stress before and after can reducing to burn till.
The present invention even with dielectric layer and interior electrode layer thin layer multiple stratification, also can improve the mechanical strength of electronic unit main body, and can suppress the separation of interlayer as mentioned above.
Description of drawings
Fig. 1 is the summary section as the multi-layer ceramic capacitor of the typical example of laminate type electronic component of the present invention.
Fig. 2 is the process chart that is used to make laminate type electronic component of the present invention.
The vertical view of the cutting part when Fig. 3 is expression cutting lamination formed body.
Embodiment
An execution mode for laminate type electronic component of the present invention is elaborated.Fig. 1 is the summary section as the multi-layer ceramic capacitor of the typical example of laminate type electronic component of the present invention.This laminate type electronic component is formed with outer electrode 3 on two end faces 2 of electronic unit main body 1.Electronic unit main body 1 is with dielectric layer 10 and interior electrode layer 7 interaction cascadings and constitute.Interior electrode layer 7 is connected alternately with outer electrode 3 on the identical end face 2 of electronic unit main body 1.
In addition, among the present invention, significantly, a part of dielectric layers in the middle of the dielectric layer 10 are the dielectric layer 8 thicker than other dielectric layer 5.In addition, described other the thickness of dielectric layer 5 is made as t1, the t2/t1 when described thickness than dielectric layer 8 is made as t2 is than more preferably more than 1.2.
In addition, according to improving described other dielectric layer 5 and described agglutinating property than dielectric layer 8, the reason that mechanical strength is improved, than dielectric layer 8 preferably and other dielectric layer 5 be homogeneous material.Here, so-called " homogeneous material " is meant the material that principal component is made of identical element.
In addition, the average crystallite particle diameter of crystal grain of pottery that constitutes other dielectric layer 5 is made as φ 1, φ 2/ φ 1 when the average crystallite particle diameter of crystal grain that constitutes the pottery of thicker dielectric layer 8 is made as φ 2 is than preferably more than 1.1, more preferably more than 1.15.Specifically, average crystallite particle diameter φ 1 is better about 0.1～1 μ m, and average crystallite particle diameter φ 2 is better about 0.2～1.2 μ m.On the other hand, under the situation that will not be plugged in the electronic unit main body 1, then can't realize the raising of the mechanical strength of electronic unit 1 than other dielectric layer 5 thicker dielectric layers 8.
Here, among the present invention, so-called " thin layer multiple stratification " is meant, the thickness of other dielectric layer 5 is below 3 μ m, and the thickness of interior electrode layer 7 is below 2 μ m, and dielectric layer and interior electrode layer are stacked more than 100 layers respectively.The present invention be suitable for this kind by thin layer, multiple stratification laminate type electronic component.Especially preferably the thickness of other dielectric layer 5 is 1～2 μ m, and the thickness of interior electrode layer 7 is 0.1～1.8 μ m.
In addition, among the present invention, be preferably 1/5～1/20 than the layer constituent ratio of dielectric layer 8 and other dielectric layer 5 (than the number of plies of the number of plies/other dielectric layers 5 of dielectric layer 8).
The interior electrode layer 7 that constitutes electronic unit main body 1 of the present invention is preferably metal forming, in addition, is preferably formed by electroplating film.In addition, this electroplating film is a principal component with the base metal material preferably, any a kind or their alloy in the middle of special more preferably Ni, the Cu.
Below a method for making that is suitable for the multi-layer ceramic capacitor of example as laminate type electronic component of the present invention is described.Fig. 2 (a)～(d) is the process chart that is used to make this multi-layer ceramic capacitor.
(a) at first, at BaTiO
3, after having modulated ceramic slurry this ceramic slurry is coated on the bearing film (carrier film) 51 Deng adding mixed sintering auxiliary agent, adhesive, solvent etc. in the dielectric medium powder, forms dielectric raw cook 53a.In addition, among the present invention, importantly, prepare the dielectric raw cook 53b thicker than dielectric raw cook 53a.According to the reason of carrying out easily burning till, should be preferably homogeneous material than thick dielectric raw cook 53b and dielectric raw cook 53a with the one of dielectric raw cook 53a.In addition, the thickness of dielectric raw cook 53a is made as tG1, the tG2/tG1 ratio in the time of will being made as tG2 than the thickness of thick dielectric raw cook 53b is preferably in more than 1.2.
In addition, the average grain diameter that constitutes the dielectric medium powder of dielectric raw cook 53a is made as φ G1, the φ G2/ φ G1 ratio the when average grain diameter that constitutes the dielectric medium powder of thicker dielectric raw cook 53b is made as φ G2 is more preferably more than 1.1.
And among the present invention, the thickness of dielectric raw cook 53a is preferably in below the 12 μ m, particularly according to the reason of small-sized, the high capacity of laminate type electronic component, and the scope of preferred 1.5～5 μ m.
(b) then, at dielectric raw cook 53a and on, form internal electrode pattern 54a, 54b respectively than thick dielectric raw cook 53b.At this moment, the effective area of internal electrode pattern 54a, 54b is preferred more than 60%, and is preferred especially more than 65%.In addition, in order to eliminate by being formed at dielectric raw cook 53a and, also can around this internal electrode pattern 54a, 54b, being coated with organic resin etc. than the internal electrode pattern 54a on the thick dielectric raw cook 53b, ladder that 54b causes.And the coating thickness of this organic resin preferably forms according to the mode suitable with the thickness of internal electrode pattern 54a, 54b.
(c) then, the dielectric raw cook 53a that has formed this internal electrode pattern 54a, 54b is reached than thick dielectric raw cook 53b with the stacked multilayer of specific formation, then, in these top and bottom, dielectric raw cook 53a by stacked multilayered unstretched formation internal electrode pattern also carries out heating and pressurizing, is made into lamination formed body 57.
The dielectric raw cook 53a of this lamination formed body 57 and than the layer constituent ratio of thick dielectric raw cook 53b (than the number of plies of the number of plies/dielectric raw cook 53a of thick dielectric raw cook 53b) more preferably 1/5～1/20.
In addition, as Fig. 2 (c) and shown in Figure 3, internal electrode pattern 54a, 54b are by being arranged in dielectric raw cook 53a regularly and constituting than lip-deep a plurality of internal electrodes of thick dielectric raw cook 53b.In addition, internal electrode pattern 54a is stacked with only about half of relative the staggering of length of the length direction of internal electrode with internal electrode pattern 54b.And, among Fig. 3, though for convenience, to describe according to the mode that internal electrode pattern 54b is wideer than internal electrode pattern 54a, their width is preferably identical.
(d) then, this lamination formed body 57 is cut into clathrate along Fig. 2 (c) and cutting part C shown in Figure 3, once make a plurality of electronic unit main body formed bodies 59.Cutting part C be pass between each internal electrode that constitutes internal electrode pattern 54a and the face vertical with dielectric raw cook 53a, 53b or pass between each internal electrode that constitutes internal electrode pattern 54b and with dielectric raw cook 53a, face that 53b is vertical.
250～300 ℃ down or carried out under 500～800 ℃ in the low oxygen atmosphere of oxygen partial pressure 0.1～1Pa after the unsticking mixture handles in atmosphere with the electronic unit main body formed body 59 of gained, in non-oxidizing atmosphere, burnt till under 1250～1350 ℃ 2～3 hours, be made into electronic unit main body 1.In addition, in order to obtain required dielectric property, be 0.1～10 at oxygen partial pressure
-4Low oxygen branch about pa is depressed, and carries out 5～15 hours heat treatment under 900～1100 ℃.
At last, coating outer electrode pastel toasts on the end face 11 of the electronic unit main body 1 of gained, forms outer electrode 3.Then, on this outer electrode 3, form Ni plated film and Sn plated film, make multi-layer ceramic capacitor.And, as the internal electrode pattern 54 that uses among the present invention, not only can use the print film of metal pastel, but also can use in the middle of the plated film, sputtered film, vapor-deposited film any one.
[industrial utilize possibility]
The present invention is suitable for the multi-layer ceramic capacitor as miniaturized high capacity.
[embodiment]
Though below will enumerate embodiment and comparative example further describes,, the present invention is not limited to following embodiment.
Following a kind of multi-layer ceramic capacitor of having made as laminate type electronic component.At first, prepare with BaTiO
3For principal component and reach the dielectric medium powder of the crystallization footpath shown in the table 1 than the average grain diameter of (average crystallite size ratio), modulate each respectively by the ceramic slurry that dielectric medium powder and organic binder bond, solvent constitute, made the different 2 kinds of raw cooks (the dielectric raw cook reaches than the thick dielectric raw cook) of thickness.The thickness of dielectric raw cook is made as 3.5 μ m, adjusts than the mode that (t2/t1) reaches the ratio shown in the table 1 according to the dielectric layer thickness after burning till than the thickness of thick dielectric raw cook.Formation is made as 0.5 μ m than the average grain diameter φ G2 of the dielectric medium powder of thick dielectric raw cook, and the average grain diameter φ G1 that constitutes the dielectric medium powder of dielectric raw cook adjusts according to the mode that the average crystallite size ratio (φ 2/ φ 1) of the dielectric layer after burning till reaches the ratio shown in the table 1.
Then,, use the corrosion resistant plate system base plate of having implemented mirror finish,, after exposure, cleaning, formed mask pattern at its surface coated photonasty resist resin for internal electrode pattern.
Thereafter, carry out electroplating processes under the state that this corrosion resistant plate system base plate is immersed in the Ni plating bath, what formed 4mm * 1mm, average thickness and be 0.5 μ m is the metal film of principal component with Ni.
Thereafter, at 80 ℃, 80kg/cm
2Condition under, described internal electrode pattern thermo-compressed is transferred to this described dielectric raw cook and than on the thick dielectric raw cook, make the dielectric raw cook that formed internal electrode pattern and than the thick dielectric raw cook.Internal electrode is set at 65% with respect to the effective area of each dielectric layer.
Then, with transfer printing this internal electrode pattern the dielectric raw cook and than thick dielectric raw cook stacked totally 200 with the constituent ratio shown in the table 1, utilize 100 ℃ of temperature, pressure 80kgf/cm
2Condition under stacked compacting made the lamination formed body.
, this lamination formed body cut into clathrate, obtained electronic unit main body formed body thereafter.At the end face of this electronic unit main body formed body, an end of internal electrode pattern exposes alternately.In addition, do not formed along the electrode pattern of the overlapping and stacked interior electrode layer of thickness direction with having offset.
Then, with this electronic unit main body formed body in atmosphere with 300 ℃ or be to have carried out with 500 ℃ in the low oxygen atmosphere of 0.1～1Pa after the unsticking mixture handles at oxygen partial pressure, be 10 at oxygen partial pressure
-7Burning till 2 hours with 1300 ℃ in the non-oxidizing atmosphere of Pa, then, is that the low oxygen branch of 0.01Pa is depressed the processing that reoxidizes of implementing 10 hours with 1000 ℃ at oxygen partial pressure, has obtained the electronic unit main body.
At last, to the electronic unit main body that as above obtains, expose interior electrode layer and formed be coated with the Cu pastel that contains glass powder on each end face of extension after, in nitrogen atmosphere, toast with 900 ℃., form Ni coating and Sn coating, form the outer electrode that is electrically connected with interior electrode layer, make multi-layer ceramic capacitor thereafter.
The overall dimension of the multi-layer ceramic capacitor of gained is: wide 1.25mm, long 2.0mm, thick 1.25mm, be clipped in the middle of the dielectric layer of internal electrode interlayer, dielectric layer thickness t1 as the sintered body of described dielectric raw cook is 2.5 μ m, is the value shown in the table 1 as the dielectric layer thickness t2 of described sintered body than the thick dielectric raw cook and the ratio of thickness t 1.
After burning till,, 100 samples have been carried out the evaluation of electrostatic capacitance and leafing respectively for the multi-layer ceramic capacitor of gained.Leafing is that the sample after pair cross-section grinds is estimated.Mechanical strength is to have carried out the three-point bending strength experiment to each 20.Measurement result separately is illustrated in the table 1.
On the other hand, as a comparative example, made by thickness, used the method identical to estimate with the present invention at holostrome laminate type electronic component of constituting of the dielectric layer of homogeneous (thickness 2.5 μ m) all.
Table 1
| Sample No | Than plugging of dielectric layer | ??t2/t1 *2 | Crystallization directly than | Layer constituent ratio | Electrostatic capacitance | Leafing | Mechanical strength |
| Have, do not have | ?φ2/φ1 | Than dielectric layer/dielectric layer *3 | ?μF | Individual/100 | ??kgf | ||
| ??? *1 | Do not have | ????- | ????- | ?????- | ???4.9 | ????5/100 | ????9.5 |
| ????2 | Have | ????1.1 | ????1 | ????0.1 | ???4.87 | ????2/100 | ????10 |
| ????3 | Have | ????1.2 | ????1 | ????0.1 | ???4.83 | ????0/100 | ????10.4 |
| ????4 | Have | ????2 | ????1 | ????0.1 | ???4.8 | ????0/100 | ????10.6 |
| ????5 | Have | ????5 | ????1 | ????0.1 | ???4.7 | ????0/100 | ????11 |
| ????6 | Have | ????1.2 | ????1.1 | ????0.1 | ???4.85 | ????0/100 | ????10.5 |
| ????7 | Have | ????1.2 | ????1.15 | ????0.1 | ???4.86 | ????0/100 | ????10.7 |
| ????8 | Have | ????1.2 | ????1.15 | ????0.2 | ???4.82 | ????0/100 | ????11.5 |
*Mark is represented extraneous sample of the present invention.
*2: than thick dielectric layer thickness/dielectric layer thickness
*3: than the number of plies of the number of plies/dielectric layer of dielectric layer
Can know from the result of table 1 and to see having in sample No.2～8 of the thicker dielectric layer of thickness, electrostatic capacitance is more than 4.7 μ F, and leafing is below 2/100, and mechanical strength is more than 10kgf.Particularly, make dielectric layer thickness t1 with than the ratio t2/t1 of the thickness t 2 of dielectric layer in sample N0.3～8 more than 1.2, electrostatic capacitance and does not have leafing more than 4.7 μ F, mechanical strength is up to 10.4kgf.On the other hand, have among the sample No.1 of holostrome that does not plug than dielectric layer by the electronic unit main body of the dielectric layer formation of same thickness (2.5 μ m), though electrostatic capacitance is up to 4.9 μ F, the generation number of leafing reaches 10/100, and mechanical strength also is low to moderate 9.5kgf.
Claims (16)
1. laminate type electronic component, be at a plurality of dielectric layers of interaction cascading and interior electrode layer and have the laminate type electronic component of outer electrode on the end face of the electronic unit main body that forms, it is characterized in that a part of dielectric layer in the described dielectric layer is the dielectric layer bigger than other dielectric layer thickness.
2. laminate type electronic component according to claim 1 is characterized in that, described thicker dielectric layer and described other the layer constituent ratio of dielectric layer are 1/5～1/20 than the number of plies of dielectric layer/other the number of plies of dielectric layer promptly.
3. laminate type electronic component according to claim 1 and 2 is characterized in that, described thicker dielectric layer and described other dielectric layer are homogeneous material.
4. according to any described laminate type electronic component in the claim 1～3, it is characterized in that,, when described thicker dielectric layer thickness is made as t2, satisfy the relation of t2/t1 〉=1.2 in that described other dielectric layer thickness is made as t1.
5. according to any described laminate type electronic component in the claim 1～4, it is characterized in that described other dielectric layer thickness is below 3 μ m.
6. according to any described laminate type electronic component in the claim 1～5, it is characterized in that the thickness of described interior electrode layer is below 2 μ m.
7. according to any described laminate type electronic component in the claim 1～6, it is characterized in that, be made as φ 1 will constituting described other the average crystallite particle diameter of crystal grain of pottery of dielectric layer, when the average crystallite particle diameter of crystal grain that constitutes the pottery of described thicker dielectric layer is made as φ 2, satisfy the relation of φ 2/ φ 1 〉=1.1.
8. according to any described laminate type electronic component in the claim 1～7, it is characterized in that described interior electrode layer is a metal forming.
9. the laminate type electronic component described in according to Claim 8 is characterized in that described metal forming is an electroplating film.
10. the method for making of a laminate type electronic component, it is characterized in that, have operation that preparation contains the dielectric raw cook of dielectric medium powder and the thickness dielectric raw cook thicker than this dielectric raw cook at least, described dielectric raw cook and the described operation that forms internal electrode pattern on than the thick dielectric raw cook respectively, will form this internal electrode pattern described dielectric raw cook and described than the thick dielectric raw cook stacked and form the lamination formed body operation, cut this lamination formed body and the operation that forms electronic unit main body formed body and burn till.
11. the method for making of laminate type electronic component according to claim 10 is characterized in that, described layer constituent ratio than thick dielectric raw cook and described dielectric raw cook, and promptly the number of plies than the number of plies/dielectric raw cook of thick dielectric raw cook is 1/5～1/20.
12. the method for making according to claim 10 or 11 described laminate type electronic components is characterized in that, described is homogeneous material than thick dielectric raw cook and described dielectric raw cook.
13. the method for making according to any described laminate type electronic component in the claim 10～12 is characterized in that, when the thickness with described dielectric raw cook is made as tG1, when described thickness than the thick dielectric raw cook is made as tG2, satisfies the relation of tG2/tG1 〉=1.2.
14. method for making according to any described laminate type electronic component in the claim 10～13, it is characterized in that, average grain diameter at the dielectric medium powder that will constitute described dielectric raw cook is made as φ G1, when the average grain diameter that constitutes the dielectric medium powder of described thicker dielectric raw cook is made as φ G2, satisfy the relation of φ G2/ φ G1 〉=1.1.
15. the method for making according to any described laminate type electronic component in the claim 10～14 is characterized in that, internal electrode pattern is a metal forming.
16. the method for making of laminate type electronic component according to claim 15 is characterized in that, metal forming is an electroplating film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003302923A JP2005072452A (en) | 2003-08-27 | 2003-08-27 | Laminated electronic component and its manufacturing method |
| JP2003302923 | 2003-08-27 |
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| Publication Number | Publication Date |
|---|---|
| CN1591717A true CN1591717A (en) | 2005-03-09 |
| CN100521002C CN100521002C (en) | 2009-07-29 |
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| CNB2004100576826A Expired - Fee Related CN100521002C (en) | 2003-08-27 | 2004-08-23 | Laminated electronic component and mfg method thereof |
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| Country | Link |
|---|---|
| JP (1) | JP2005072452A (en) |
| KR (1) | KR20050022330A (en) |
| CN (1) | CN100521002C (en) |
| TW (1) | TWI387984B (en) |
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| CN102934181A (en) * | 2010-06-11 | 2013-02-13 | 株式会社村田制作所 | Electronic component |
| CN103247441A (en) * | 2012-02-13 | 2013-08-14 | 株式会社村田制作所 | Method of manufacturing multilayer ceramic capacitor and multilayer ceramic capacitor |
| CN105378867A (en) * | 2013-07-10 | 2016-03-02 | 太阳诱电株式会社 | Laminate ceramic capacitor |
| CN106816312A (en) * | 2015-11-27 | 2017-06-09 | 三星电机株式会社 | Multilayer ceramic electronic component and its manufacture method |
| CN110993338A (en) * | 2018-10-02 | 2020-04-10 | 三星电机株式会社 | Multilayer ceramic electronic component |
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| JP4438659B2 (en) * | 2005-03-24 | 2010-03-24 | Ｔｄｋ株式会社 | Manufacturing method of multilayer ceramic electronic component |
| JP4952893B2 (en) * | 2006-05-29 | 2012-06-13 | 学校法人日本大学 | Ceramic electronic component and method for manufacturing the same |
| KR20150053424A (en) | 2013-11-08 | 2015-05-18 | 삼성전기주식회사 | Multi-layered ceramic electronic component and board having the same mounted thereon |
| JP2019062023A (en) | 2017-09-25 | 2019-04-18 | Tdk株式会社 | Electronic component device |
-
2003
- 2003-08-27 JP JP2003302923A patent/JP2005072452A/en active Pending
-
2004
- 2004-08-20 KR KR1020040065913A patent/KR20050022330A/en not_active Application Discontinuation
- 2004-08-23 CN CNB2004100576826A patent/CN100521002C/en not_active Expired - Fee Related
- 2004-08-26 TW TW093125638A patent/TWI387984B/en not_active IP Right Cessation
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| CN102934181A (en) * | 2010-06-11 | 2013-02-13 | 株式会社村田制作所 | Electronic component |
| CN102934181B (en) * | 2010-06-11 | 2015-12-16 | 株式会社村田制作所 | Electronic unit |
| CN103247441A (en) * | 2012-02-13 | 2013-08-14 | 株式会社村田制作所 | Method of manufacturing multilayer ceramic capacitor and multilayer ceramic capacitor |
| CN103247441B (en) * | 2012-02-13 | 2016-09-21 | 株式会社村田制作所 | The manufacture method of laminated ceramic capacitor and laminated ceramic capacitor |
| CN105378867A (en) * | 2013-07-10 | 2016-03-02 | 太阳诱电株式会社 | Laminate ceramic capacitor |
| CN106816312A (en) * | 2015-11-27 | 2017-06-09 | 三星电机株式会社 | Multilayer ceramic electronic component and its manufacture method |
| US10304632B2 (en) | 2015-11-27 | 2019-05-28 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component with improved withstand voltage characteristics and method of manufacturing the same |
| US10943736B2 (en) | 2015-11-27 | 2021-03-09 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing a multilayer ceramic electronic component with improved withstand voltage characteristics |
| CN110993338A (en) * | 2018-10-02 | 2020-04-10 | 三星电机株式会社 | Multilayer ceramic electronic component |
| CN110993338B (en) * | 2018-10-02 | 2023-02-03 | 三星电机株式会社 | Multilayer ceramic electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050022330A (en) | 2005-03-07 |
| TW200518132A (en) | 2005-06-01 |
| CN100521002C (en) | 2009-07-29 |
| JP2005072452A (en) | 2005-03-17 |
| TWI387984B (en) | 2013-03-01 |
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