CN1590584A - New type diamondlike film sedimentation technology - Google Patents
New type diamondlike film sedimentation technology Download PDFInfo
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- CN1590584A CN1590584A CN 03155986 CN03155986A CN1590584A CN 1590584 A CN1590584 A CN 1590584A CN 03155986 CN03155986 CN 03155986 CN 03155986 A CN03155986 A CN 03155986A CN 1590584 A CN1590584 A CN 1590584A
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Abstract
A process for depositing the quasi-diamond film includes such steps as proportionally mixing CH4 (or CO2, or CO) with H2 and Ar, introducting the mixture to the ion source in vacuum chamber, and depositing film on substrate for 15 min.
Description
Technical field
The present invention relates to a kind of novel diamond like carbon film depositing operation, is low temperature big area depositing diamond-like film in various substrates, belongs to the technical field of thin film deposition.
Background technology
(Diamond-like Carbon films is the amorphous carbon-film that contains diamond lattic structure (SP3 key) DLC) to diamond like carbon film, has many performances similar to diamond thin and uses very extensive.For example can be used as anti-scuff coating, tweeter vibrating diaphragm and optical protection layer, especially require the very high occasion of depositing temperature bed die face smooth finish, also, have only diamond like carbon film (DLC) to adapt to just like the protective membrane of computer disk, CD etc. at some.
Existing DLC deposition method respectively has shortcoming.For example:
1. the complex structure of ion beam depositing method (IBD) needs magnetic and filter, and sedimentation velocity is low.
2. ion beam assisted depositing method (IBED) needs dual ion sources, and its sedimentation velocity is also low, can't realize large-area deposition.
3. magnetron sputtering method (MS), its sedimentation rate is low, and film quality difference and space are more.
4. vacuum cathode arc deposited method (VCAD), a large amount of splash magnetic of its graphite target particle, sedimentary film quality is poor, the temperature height.
5. radio frequency glow discharge plasma activated chemical vapour deposition (RF-PCVD), depositional area is little, power supply complexity and poor controllability.
Summary of the invention
The objective of the invention is to provide a kind of novel diamond like carbon film depositing operation, it can overcome above-mentioned polytechnic shortcoming, it can large-area film deposition and effect preferable.
1. novel diamond like carbon film depositing operation is CH
4And H
2And Ar with 3: 1: 1 ratio by under meter
2. control and send into respectively and be mixed into air chamber (1) is sent into the ion source (4) that is contained in vacuum chamber (3) in by air outlet (2) behind uniform mixing, the vacuum tightness of vacuum chamber (3) is 0.03Pa, its negative electrode (5) and battery E
1Connect, substrate (7) is 200mm with the distance of ion source (4), and ionogenic is discharging current 100mA, projected current 20mA, and vacuum chamber during deposition (3) is pumped into 0.08～0.1Pa vacuum, deposit film (8) is arranged in the substrate (7) after at this moment depositing 15 minutes.The pole shoe (12) of ion source (4) joins with permanent magnet (11), and pole shoe (12) has an inlet mouth (13), and the negative electrode of graphite (5) meets battery E
1Negative pole, its anodal anode (6) with graphite joins battery E
1Negative pole meet another E again
2Join and ground connection with extraction pole (17) again behind the battery, simultaneously battery E
1Negative pole be connected with anticathode (16) again.
The advantage of novel diamond like carbon film depositing operation is that substrate can be metallic substance and non-metallic material or glass, except using CH
4In addition, can also use CO
2Or CO gas, it can realize the big area deposition, the rete lubricious hydrophobic is good, contacting the infiltration angle can reach more than 80 degree with water, quality of forming film is good and hardness is high, contains the SP3 key and reaches as high as 80%, and processing range is wide and controllability is strong, need not filter by magnetic, be specially adapted to the low and highly polished occasion of depositing temperature.
Description of drawings
Fig. 1. diamond like carbon film depositing operation schematic diagram
Fig. 2. the ion source synoptic diagram
By Fig. 1, CH
4And H
2And Ar sends into respectively with 3: 1: 1 ratio and is mixed into air chamber (1), sends into the ion source (4) that is contained in the vacuum chamber (3) by air outlet (2) behind uniform mixing, its negative electrode (5) and battery E
1Connect, the anode of battery (6) connects ion source (4).The required diamond like carbon film (8) of deposition is gone up in substrate (7), vacuumizes before vacuum chamber begins to deposit to be 0.03Pa, and vacuum chamber during deposition (3) is 0.08～0.1Pa, and residual gas is extracted out by air outlet (9) and gone.
By Fig. 2, ion source (4) adopts common penning source, and its power is 500W, just uses its negative electrode (5) and anode (6) instead pure graphite and makes.Pole shoe in Fig. 2 (12) joins with permanent magnet (11), and pole shoe (12) has an inlet mouth (13), and the negative electrode of graphite (5) meets battery E
1(0～1500V) negative pole, its anodal anode (6) with graphite joins battery E
1Negative pole meet another E again
2Battery (0～1500V), join and ground connection with extraction pole (17) again, simultaneously battery E
1Negative pole be connected with anticathode (16) again.
Embodiment
The negative electrode (5) and the anode (6) of penning ion source (4) are made of pure graphite, and mixed gas is controlled its proportioning by under meter according to the above ratio, if also can adopt common gas meter to thin film layer is less demanding.Alkanes gas will use the high gas of purity, can also use other alkanes gas except methane, only needs the ratio of corresponding adjustment gas.
In Fig. 1, its processing parameter is discharging current 100mA, sparking voltage 500V, and extraction voltage 200V, substrate (7) is 200mm to the distance of ion source (4), and depositing time is 15 minutes, and its residual gas is discharged by air outlet (9).
Substrate (7) can be metal or non-metallic material and glass etc., if thin film layer allows to contain hydrogen, can select CH for use
4If, do not contain hydrogen, can use CO instead
2Or CO.
Claims (2)
1. a novel diamond like carbon film depositing operation is characterized in that CH
4And H
2And Ar with 3: 1: 1 ratio by under meter control and send into respectively and be mixed into air chamber (1), behind uniform mixing, send into the ion source (4) that is contained in vacuum chamber (3) in by air outlet (2), the vacuum tightness of vacuum chamber (3) is 0.03Pa, its negative electrode (5) and battery E
1Connect, substrate (7) is 200mm with the distance of ion source (4), and ionogenic discharging current is 100mA, projected current 20mA, and vacuum chamber during deposition (3) is pumped into 0.08～0.1Pa vacuum, deposit film (8) is arranged in the substrate (7) after at this moment depositing 15 minutes.
2. novel diamond like carbon film depositing operation according to claim 1 is characterized in that the pole shoe (12) of ion source (4) and permanent magnet (11) join, and pole shoe (12) has an inlet mouth (13), and the negative electrode of graphite (5) meets battery E
1Negative pole, its anodal anode (6) with graphite joins battery E
1Negative pole meet another E again
2Join and ground connection with extraction pole (17) again behind the battery, simultaneously battery E
1Negative pole be connected with anticathode (16) again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031559867A CN100453693C (en) | 2003-08-29 | 2003-08-29 | New type diamondlike film sedimentation technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031559867A CN100453693C (en) | 2003-08-29 | 2003-08-29 | New type diamondlike film sedimentation technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1590584A true CN1590584A (en) | 2005-03-09 |
| CN100453693C CN100453693C (en) | 2009-01-21 |
Family
ID=34598269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031559867A Expired - Fee Related CN100453693C (en) | 2003-08-29 | 2003-08-29 | New type diamondlike film sedimentation technology |
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| Country | Link |
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| CN (1) | CN100453693C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330063A (en) * | 2011-06-13 | 2012-01-25 | 星弧涂层科技(苏州工业园区)有限公司 | Method for preparing DLC (Diamond-Like Carbon) coating with high visible light transmissivity |
| CN106098517A (en) * | 2016-07-29 | 2016-11-09 | 中国原子能科学研究院 | Miniature Penning ion source under a kind of highfield |
| CN106684387A (en) * | 2016-12-20 | 2017-05-17 | 深圳先进技术研究院 | Lithium ion battery negative electrode comprising diamond-like thin film layer, preparation method for negative electrode, and lithium ion battery |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1020158C (en) * | 1987-12-22 | 1993-03-24 | 昆明物理研究所 | Method for coating diamond-like carbon film on infrared lens of germanium and silicon |
| JP3187120B2 (en) * | 1992-03-23 | 2001-07-11 | 日本特殊陶業株式会社 | Diamond synthesis method |
| JPH11140646A (en) * | 1997-11-04 | 1999-05-25 | Sony Corp | Cd plasma cvd device for dlc film formation and formation of dlc film |
| US6572935B1 (en) * | 1999-03-13 | 2003-06-03 | The Regents Of The University Of California | Optically transparent, scratch-resistant, diamond-like carbon coatings |
| CN1138020C (en) * | 1999-09-29 | 2004-02-11 | 永源科技股份有限公司 | Evaporation coating process with cathode arc for depositing diamond-like carbon film |
-
2003
- 2003-08-29 CN CNB031559867A patent/CN100453693C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102330063A (en) * | 2011-06-13 | 2012-01-25 | 星弧涂层科技(苏州工业园区)有限公司 | Method for preparing DLC (Diamond-Like Carbon) coating with high visible light transmissivity |
| CN106098517A (en) * | 2016-07-29 | 2016-11-09 | 中国原子能科学研究院 | Miniature Penning ion source under a kind of highfield |
| CN106684387A (en) * | 2016-12-20 | 2017-05-17 | 深圳先进技术研究院 | Lithium ion battery negative electrode comprising diamond-like thin film layer, preparation method for negative electrode, and lithium ion battery |
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| Publication number | Publication date |
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| CN100453693C (en) | 2009-01-21 |
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Addressee: Zhao Yue Document name: Deemed as a notice of withdrawal (Trial) |
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Owner name: SHENZHEN WANG BO TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ZHAO YUE Effective date: 20090605 |
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Effective date of registration: 20090605 Address after: Baoan District Shiyan street Shenzhen city Guangdong Province House Community AI Qun Lu with rich industrial zone 2 Patentee after: Shenzhen Wangbo Technology Co., Ltd. Address before: Baoan District Shiyan Town, Shenzhen city of Guangdong province with rich industrial area 2 Building 2 floor sunwoda - onebar Technology Co. Ltd. Patentee before: Zhao Yue |
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