CN1588503A - Electroluminescent display device and its producing method - Google Patents
Electroluminescent display device and its producing method Download PDFInfo
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- CN1588503A CN1588503A CN 200410077054 CN200410077054A CN1588503A CN 1588503 A CN1588503 A CN 1588503A CN 200410077054 CN200410077054 CN 200410077054 CN 200410077054 A CN200410077054 A CN 200410077054A CN 1588503 A CN1588503 A CN 1588503A
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Abstract
The invention discloses an electric light displaying device including a film transistor, a nontransparent electrode, a nontransparent layer, a media layer and a transparent electrode. The film transistor is arranged on the base board, and it is covered by a middle insulating layer. The nontransparent electrode and the nontransparent layers are arranged above the middle insulating layer in order; the nontransparent electrode is connected to the nontransparent transistor. The nontransparent layer has an aperture and exposes part of nontransparent electrode. The media layer is arranged on the aperture part. The transparent electrode is arranged above the nontransparent. The invention also discloses the preparing method for the device.
Description
Technical field
The present invention relates to a kind of flat display apparatus, particularly relate to a kind of top light emitting (top emissiontype) electroluminescent display (electro-luminescence device) and manufacture method thereof.
Background technology
Electro photo-luminescent apparatus, for example (organic light emitting diode OLED), is a kind of emissive type device that uses organic material to Organic Light Emitting Diode.Typically, Organic Light Emitting Diode comprises: an anode, a negative electrode and be arranged at anode and negative electrode between the electroluminescence medium layer (electro-luminescence medium layer, EML).When applying a current potential and be worse than between negative electrode and the anode, the electroluminescence medium layer can be injected and recombination (recombine) from negative electrode and anode respectively in electronics and electric cave, and releases energy with luminous form.
Fig. 1 shows traditional bottom-emission electroluminescent display diagrammatic cross-section.Please refer to Fig. 1, a cushion 102 is formed on the substrate 100, and a thin film transistor (TFT) 111 is arranged on the cushion 102, and it comprises a channel layer 104, gate dielectric 106, gate electrode 107, reaches source/drain electrodes 109.Channel layer 104, for example a polysilicon layer is formed on the cushion 102, and it has source electrode 105.Channel layer 104 tops are covered by an insulation course 106, and silicon nitride layer for example is with as this gate dielectric.Gate electrode 107 is arranged at the position above the gate dielectric above the channel layer 104 106, and it is by an interlayer dielectric (interlayer dielectric, ILD) 108 covering of layer.Gate electrode 107 both sides are provided with source/drain electrodes 109, and it is via the contact hole (contact hole) in interlayer dielectric layer and the below insulation course 106 and be electrically connected with source electrode 105.One first sheath (passivation layer), 110 cover film transistors 111 and interlayer dielectric layer 108, it has an interlayer hole to expose wherein source electrode 109.One transparency electrode 112, for example (indium tin oxide ITO), is formed on first sheath 110 of a part and is electrically connected with the source/drain electrodes of exposing 109 via interlayer hole indium tin oxide.Second sheath 114 is arranged on first sheath 110 of thin film transistor (TFT) 111 tops.One electroluminescence medium layer 116 is covered in second sheath 114 and transparency electrode 112 tops, and a non-transparent electrode 118, for example a metal material is formed at electroluminescence medium layer 116 tops.
In the electroluminescent display of Fig. 1, transparency electrode 112 is as an anode, and non-transparent electrode 118 is as a negative electrode.Therefore, light is launched downwards through transparency electrode 112 from electroluminescence medium layer 116.This is called the bottom-emission electroluminescent display.Yet the light-emitting area of bottom-emission electroluminescent display is subject to thin film transistor (TFT).When the thin film transistor (TFT) quantity of display device increased, the aperture opening ratio of electroluminescent display (aperture ratio) can dwindle.In order to keep panel luminance, power consumption meeting thereby increase makes the lost of life of electroluminescent display.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of electroluminescent display and manufacture method thereof, it makes light-emitting area (or aperture opening ratio) not be subject to thin film transistor (TFT) by the mode of upwards launching light.
Another object of the present invention is to provide a kind of electroluminescent display and manufacture method thereof, it avoids the light side leakage by one around the non transparent layer of luminous zone, and then prevents electroluminescent display generation colour cast (color wash out).
According to above-mentioned purpose, the invention provides a kind of electroluminescent display, it comprises: a substrate with one first district and one second district, a thin film transistor (TFT), an intermediate insulating layer, a non-transparent electrode, a non transparent layer, an electroluminescence medium layer, an and transparency electrode.Thin film transistor (TFT) is arranged at the top, first district of substrate, and intermediate insulating layer is arranged at the top, second district and the cover film transistor of substrate.Non-transparent electrode is arranged at the intermediate insulating layer top and is electrically connected with thin film transistor (TFT), and non transparent layer is arranged at the non-transparent electrode top, and it has an opening and is positioned at top, second district and exposes a part of non-transparent electrode.The electroluminescence medium layer is arranged at open bottom.Transparency electrode is arranged at the surface of non transparent layer top and compliance covering opening and electroluminescence medium layer.
According to above-mentioned purpose, the invention provides a kind of manufacture method of electroluminescent display again.At first, provide a substrate, it has one first district and one second district, forms a thin film transistor (TFT) in the top, first district of substrate, then forms an intermediate insulating layer in the top, second district of substrate, and the cover film transistor.Afterwards, form a non-transparent electrode above intermediate insulating layer, and be electrically connected with thin film transistor (TFT), then form a non transparent layer in the non-transparent electrode top, it has the non-transparent electrode that an opening is positioned at above second district and exposes a part.Subsequently, form an electroluminescence medium layer, form a transparency electrode in the non transparent layer top again, and compliance covers the surface of opening and electroluminescence medium layer in open bottom.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate institute's accompanying drawing to elaborate.
Description of drawings
Fig. 1 shows traditional bottom-emission electroluminescent display diagrammatic cross-section.
Fig. 2 A to 2F shows the manufacture method diagrammatic cross-section according to the top light emitting electroluminescent display of the embodiment of the invention.
The simple symbol explanation
Existing
100～substrate; 102～cushion; 104～channel layer; 105～source electrode; 106～gate dielectric; 107～gate electrode; 108～interlayer dielectric layer; 109～source/drain electrodes; 110～the first sheaths; 111～thin film transistor (TFT); 112～transparency electrode; 114～the second sheaths; 116～electroluminescence medium layer; 118～non-transparent electrode.
The present invention
10～the first districts; 20～the second districts; 200～substrate; 202～cushion; 204～channel layer; 206～gate dielectric; 207～gate electrode; 209～ion injects; 210～interlayer dielectric layer; 211～source electrode; 212～intermediate insulating layer; 213～source/drain electrodes; 214～non-transparent electrode; 215～thin film transistor (TFT); 216～transparency conducting layer; 217,219,221～opening; 218 insulation courses; 220～non transparent layer; 222～electroluminescence medium layer; 224～transparency electrode; 226～electric exciting light-emitting diode.
Embodiment
Fig. 2 F shows the diagrammatic cross-section according to the electroluminescent display of the top light emitting of the embodiment of the invention.Electroluminescent display comprises: a substrate 200 with one first district 10 and one second district 20, a thin film transistor (TFT) 215, an intermediate insulating layer 212, a non-transparent electrode 214, a non transparent layer 220, an electroluminescence medium layer 222, an and transparency electrode 224.Herein, first district of substrate 200 can be a transistor area, and second district 20 can be a luminous zone.Moreover, be coated with a cushion 202 on it.Thin film transistor (TFT) 215 is arranged on the cushion 202 of 10 tops, first district of substrate 200, its by the channel layer 204 with source electrode 211, gate dielectric 206, gate electrode 207, and source/drain electrodes 213 constituted.One interlayer dielectric (ILD) layer 210 is arranged on the gate dielectric 206 and cover gate electrode 207.
One insulation course (sheath) 218 and non transparent layer 220 are arranged at non-transparent electrode 214 tops in regular turn, wherein insulation course 218 has an opening 219 and is positioned at 20 tops, second district of substrate 200 and exposes a part and have transparency conducting layer 216 and form non-transparent electrode 214 on it, and non transparent layer 220 has an opening 221 and is positioned at opening 219 tops.Herein, opening 221 is greater than opening 219, with further increase aperture opening ratio.Electroluminescence medium layer 222 is arranged at opening 221 and 219 bottoms.Transparency electrode 224 is arranged at the surface of non transparent layer 220 tops and compliance covering opening 221 and electroluminescence medium layer 222.
When applying a current potential and be worse than between electrode 214 and 224, electroluminescence medium layer 222 can be injected and recombination and luminous from different electrode 214 and 224 in electronics and electric cave.In the present embodiment, light is by upwards reflection of non-transparent electrode 214.Thus, even thin film transistor (TFT) quantity increases, its light-emitting area (or aperture opening ratio) can't dwindle.Therefore, the brightness of electroluminescent display is maintained or increases.In other words, power consumption can not increase and the life-span of electroluminescent display is prolonged.Moreover according to electroluminescent display of the present invention, the non transparent layer 220 that is arranged at non-transparent electrode 214 tops can stop that light sheds from electroluminescence medium layer 222 both sides, and then prevents electroluminescent display generation color offset phenomenon.That is, can improve the display quality of top light emitting electroluminescent display.
The manufacture method that below cooperates the top light emitting electroluminescent display of Fig. 2 A to 2F explanation embodiment of the invention.At first, please refer to Fig. 2 A, a substrate 200 is provided, for example glass or quartz base plate, it has a plurality of transistor area and luminous zone, in order to form thin film transistor (TFT) and electric exciting light-emitting diode thereon respectively.For simplicity of illustration, only show one first district 10 and one second district 20 herein.For example, first district, 10 expressions, one transistor area, and 20 expressions, one luminous zone, second district.Then, on substrate 200, form a cushion 202.This cushion 202 can be a single layer structure or rhythmo structure.For example, the silicon oxide layer above cushion 202 can be positioned at by a silicon nitride layer and is constituted.Then, on cushion 202, form semi-conductor layer (not illustrating), utilize existing photoetching and etch process to define this semiconductor layer subsequently, above first district 10 of substrate 200, to form a patterned semiconductor layer 204, with channel layer as thin film transistor (TFT).
Next, please refer to Fig. 2 B, form an insulation course 206 above cushion 202, for example silicon nitride layer, and covering channel layer 204 is with the gate dielectric as thin film transistor (TFT).Afterwards, on insulation course 206, form a metal level (not illustrating), utilize existing photoetching and etch process to define this metal level, above first district 10 of substrate 200, to form a patterned metal layer 207, with gate electrode as thin film transistor (TFT).Then, utilize gate electrode 207, the channel layer 204 of below is implemented ion implantation technology 209, to form source electrode 211 therein as mask.
Next, deposition one interlayer dielectric (ILD) layer 210 above the substrate shown in Fig. 2 B.Subsequently, run through the contact hole of interlayer dielectric layer 210 and insulation course 206 and expose source electrode 211 in the formation of gate electrode 207 both sides by etch process, shown in Fig. 2 C.
Next, please refer to Fig. 2 D, on interlayer dielectric layer 210, form a metal level (not illustrating) and insert contact hole and be electrically connected with source electrode 211.Afterwards, define this metal level, forming source/drain electrodes 213, and above first district 10 of substrate 200, finish the making of thin film transistor (TFT) 215 by existing photoetching and etch process.Then, deposition one intermediate insulating layer (interlayer insulator) 212 on first and second district's interlayer dielectric layer 210 above 10 and 20 of substrate 200, and cover film transistor 215 are with as a flatness layer.Then, in intermediate insulating layer 212, form an opening 217 to expose wherein source electrode 213.
Next, please refer to Fig. 2 E, above intermediate insulating layer 212, form a non-transparent conductive layer 214 and insert opening 217 and be electrically connected with the source/drain electrodes of exposing 213.Non-transparent conductive layer 214 is as the electrode and the reflection layer of Organic Light Emitting Diode.Non-transparent electrode 214 can be a single or multiple lift metal level.For example, it can be made of any of aluminium, silver, gold, titanium, nickel, chromium, copper, iron, manganese, platinum, zinc and alloy thereof.In the present embodiment, the relative height of non-transparent conductive layer 214 that is positioned at 20 tops, second district of substrate 200 is higher than thin film transistor (TFT) 215, makes the electroluminescence medium layer of follow-up formation can be higher than thin film transistor (TFT) 215 and increase its aperture opening ratio.Then, an alternative transparency conducting layer 216, for example indium tin oxide (ITO) or the indium-zinc oxide (IZO) of on non-transparent electrode 214, depositing.Transparency conducting layer 216 is the part of the electrode 214 of electric exciting light-emitting diode, and the work function of electrode 214 can be mated with the electroluminescence medium layer of follow-up formation.Be noted that,, the work function of electrode 214 can be mated with the electroluminescence medium layer if no transparency conducting layer 216 between the electroluminescence medium layer of follow-up formation and the electrode 214 then must additionally mix to the electroluminescence medium layer.
Then, form on the non-transparent electrode 214 on it and form an insulation course (sheath) 218 having transparency conducting layer 216.Afterwards, form an opening 219 at the insulation course 218 that is arranged in above second district 20 of substrate 200.
At last, please refer to Fig. 2 F, carry out committed step of the present invention, on insulation course 218, form a non transparent layer 220.As previously discussed, this non transparent layer 220 sheds from the electroluminescence medium layer both sides of follow-up formation in order to prevent light, and then avoids the color offset phenomenon that causes because of light leak.In the present embodiment, the material of non transparent layer 220 can be metal level, metal oxide layer, organic material layer (for example photoresist), and any of polymkeric substance.Preferably, the material of non transparent layer 220 is a metal level.For example, it can be made of any of aluminium, silver, gold, titanium, nickel, chromium, copper, iron, manganese, platinum, zinc and alloy thereof.Moreover it can be a single or multiple lift structure, as non-transparent electrode 214.When the material of non transparent layer 220 is a metal level, side leakage light can be trapped among non-transparent electrode 214 and the non transparent layer 220 formed waveguides, and reduces the chance of light leak.Then, form another opening 221 in the non transparent layer 220 above opening 219, it is preferably more than opening 219, in order to avoid cover the light that is sent from the electroluminescence medium layer (EML) of aftermentioned formation.Afterwards, form an electroluminescence medium layer 222 at opening 219 and 221 bottoms, it can be a single or multiple lift structure.In the present embodiment, for example, electroluminescence medium layer 222 is a sandwich construction and comprises: an electric cave transport layer (hole transportlayer, HTL), an electron transfer layer (electron transport layer, ETL) and be arranged at luminescent layer (active or emissive layer) between electric cave transport layer and the electron transfer layer., be simplicity of illustration herein, represent it with a single layer structure.Then, form a transparency electrode 224 in non transparent layer 220 tops, for example indium tin oxide (ITO) or indium-zinc oxide (IZO), and compliance covers the surface of opening 221 and electroluminescence medium layer 222, above second district 20 of substrate 200, to finish the making of electric exciting light-emitting diode 226.Because light is from upwards emission of electroluminescence medium layer 222, so be called the top light emitting electroluminescent display.
In addition, in another embodiment of the present invention, non transparent layer 220 is formed directly in non-transparent electrode 214 tops.That is naked layer 218 exists between non transparent layer 220 and the non-transparent electrode 214.Yet, be noted that non transparent layer 220 is required to be insulating material, for example metal oxide layer, organic material layer (for example photoresist), and any of polymkeric substance.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can do a little change and retouching without departing from the spirit and scope of the present invention, thus protection scope of the present invention should with accompanying Claim the person of being defined be as the criterion.
Claims (16)
1, a kind of electroluminescent display comprises:
One substrate, it has one first district and one second district;
One thin film transistor (TFT) is arranged at above this first district of this substrate;
One intermediate insulating layer is arranged at this top, second district of this substrate and covers this thin film transistor (TFT);
One non-transparent electrode is arranged at this intermediate insulating layer top and is electrically connected with this thin film transistor (TFT);
One non transparent layer is arranged at this non-transparent electrode top, and it has one first opening and is positioned at this top, second district and exposes this a part of non-transparent electrode;
One electroluminescence medium layer is arranged at this first open bottom; And
One transparency electrode is arranged at the surface that this non transparent layer top and compliance cover this first opening and this electroluminescence medium layer.
2, electroluminescent display as claimed in claim 1, the relative height that wherein is positioned at this non-transparent electrode of this top, second district is higher than this thin film transistor (TFT).
3, electroluminescent display as claimed in claim 1 comprises that also an indium oxide layer of tin is arranged between this electroluminescence medium layer and this non-transparent electrode.
4, electroluminescent display as claimed in claim 1, wherein this non-transparent electrode comprises a metal level.
5, electroluminescent display as claimed in claim 1, wherein this non transparent layer comprises an organic material layer, metal oxide layer, and any of polymeric layer.
6, electroluminescent display as claimed in claim 1 comprises that also an insulation course is arranged between this non-transparent electrode and this non transparent layer, and it has one second opening and is positioned at this first opening below and exposes this non-transparent electrode.
7, electroluminescent display as claimed in claim 6, wherein this non transparent layer comprises a metal level, metal oxide layer, organic material layer, and any of polymeric layer.
8, electroluminescent display as claimed in claim 6, wherein this first opening is greater than this second opening.
9, a kind of manufacture method of electroluminescent display comprises the following steps:
One substrate is provided, and it has one first district and one second district;
This top, first district in this substrate forms a thin film transistor (TFT);
This top, second district in this substrate forms an intermediate insulating layer, and covers this thin film transistor (TFT);
Form a non-transparent electrode in this intermediate insulating layer top, and be electrically connected with this thin film transistor (TFT);
Form a non transparent layer in this non-transparent electrode top, it has one first opening and is positioned at this top, second district and exposes this a part of non-transparent electrode;
Form an electroluminescence medium layer in this first open bottom; And
Form a transparency electrode in this non transparent layer top, and compliance covers the surface of this first opening and this electroluminescence medium layer.
10, the manufacture method of electroluminescent display as claimed in claim 9, the relative height that wherein is positioned at this non-transparent electrode of this top, second district is higher than this thin film transistor (TFT).
11, the manufacture method of electroluminescent display as claimed in claim 9 also is included in and forms an indium oxide layer of tin between this electroluminescence medium layer and this non-transparent electrode.
12, the manufacture method of electroluminescent display as claimed in claim 9, wherein this non-transparent electrode comprises a metal level.
13, the manufacture method of electroluminescent display as claimed in claim 9, wherein this non transparent layer comprises an organic material layer, metal oxide layer, and any of polymeric layer.
14, the manufacture method of electroluminescent display as claimed in claim 9 also is included in and forms an insulation course between this non-transparent electrode and this non transparent layer, and it has one second opening and is positioned at this first opening below and exposes this non-transparent electrode.
15, the manufacture method of electroluminescent display as claimed in claim 14, wherein this non transparent layer comprises a metal level, metal oxide layer, organic material layer, and any of polymeric layer.
16, the manufacture method of electroluminescent display as claimed in claim 14, wherein this first opening is greater than this second opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410077054 CN1292394C (en) | 2004-09-10 | 2004-09-10 | Electroluminescent display device and its producing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410077054 CN1292394C (en) | 2004-09-10 | 2004-09-10 | Electroluminescent display device and its producing method |
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| CN1588503A true CN1588503A (en) | 2005-03-02 |
| CN1292394C CN1292394C (en) | 2006-12-27 |
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| CN 200410077054 Active CN1292394C (en) | 2004-09-10 | 2004-09-10 | Electroluminescent display device and its producing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100426552C (en) * | 2006-02-13 | 2008-10-15 | 友达光电股份有限公司 | Organic light-emitting diode and display |
| CN108231840A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
-
2004
- 2004-09-10 CN CN 200410077054 patent/CN1292394C/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100426552C (en) * | 2006-02-13 | 2008-10-15 | 友达光电股份有限公司 | Organic light-emitting diode and display |
| CN108231840A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2019127801A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
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| Publication number | Publication date |
|---|---|
| CN1292394C (en) | 2006-12-27 |
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