CN108231840A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
- Publication number
- CN108231840A CN108231840A CN201711481256.9A CN201711481256A CN108231840A CN 108231840 A CN108231840 A CN 108231840A CN 201711481256 A CN201711481256 A CN 201711481256A CN 108231840 A CN108231840 A CN 108231840A
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- layer
- display panel
- anode
- light shield
- flatness
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The present invention provides a kind of display panel, including：Substrate；Thin film transistor (TFT) is set on the substrate；Flatness layer is set on the thin film transistor (TFT)；Anode is set on the flatness layer and is connect through the flatness layer with the thin film transistor (TFT)；Pixel confining layer is set on the flatness layer；Light shield layer is set in the pixel confining layer, and the pixel in the light shield layer and the pixel confining layer with the exposure anode limits hole；OLED functional layers are set on the anode exposed；Cathode is set on the light shield layer and the OLED functional layers.The present invention also provides a kind of production methods of display panel.The present invention in pixel confining layer by forming light shield layer, so as to mask out the problem of pixel limits the light that is leaked out by side of OLED functional layers in hole, can eliminate the pixel light leakage of the prior art in this way, and then the display effect of raising display panel.
Description
Technical field
The invention belongs to display technology field, in particular, being related to a kind of display panel and preparation method thereof.
Background technology
In recent years, Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display panel becomes
Very popular emerging planar display surface panel products both at home and abroad, this is because OLED display panel has self-luminous, wide viewing angle, short
Reaction time, high-luminous-efficiency, wide colour gamut, thin thickness, the display panel that can make large scale and deflection and processing procedure are simple etc.
Characteristic, and it also has the potentiality of low cost.
For the OLED display panel of large scale high-res, emission structure at top can meet aperture opening ratio requirement, but no matter
Using which kind of manufacture craft, all there are problems that pixel (i.e. OLED functional layers) light leakage, it is aobvious so as to there is OLED display panel
Show flaw.
Invention content
In order to solve above-mentioned problem of the prior art, the purpose of the present invention is to provide a kind of elimination OLED functional layer light leakages
Display panel and preparation method thereof.
According to an aspect of the present invention, a kind of display panel is provided, including：Substrate；Thin film transistor (TFT) is set to institute
It states on substrate；Flatness layer is set on the thin film transistor (TFT)；Anode is set on the flatness layer and through described flat
Layer with the thin film transistor (TFT) to connect；Pixel confining layer is set on the flatness layer；Light shield layer is set to the pixel
The pixel in confining layers, in the light shield layer and the pixel confining layer with the exposure anode limits hole；OLED functional layers,
It is set on the anode exposed；Cathode is set on the light shield layer and the OLED functional layers.
Further, the thin film transistor (TFT) includes：Active layer is set on the substrate；First insulating layer, is set to
On the active layer；Grid is set on first insulating layer；Second insulating layer is set to the grid, the active layer
On the substrate；Source electrode and drain electrode, be set in the second insulating layer and extend through the second insulating layer with institute
Active layer connection is stated, the flatness layer is set in the source electrode, the drain electrode and the second insulating layer, and the anode runs through
The flatness layer with it is described drain electrode connect.
Further, from the anode to the cathode, sequence includes the OLED functional layers：Layer occurs for hole, hole passes
Defeated layer, organic luminous layer, electron transfer layer, electron injecting layer.
Further, the display panel further includes cover board, and the cover board is set to the cathode on the light shield layer
On.
Further, the light shield layer is made of black resin material.
According to another aspect of the present invention, a kind of production method of display panel is additionally provided, including：The shape on substrate
Into thin film transistor (TFT)；Flatness layer is formed on the thin film transistor (TFT)；On the flatness layer formed through the flatness layer with
The anode being connect with the thin film transistor (TFT)；Pixel confining layer is formed on the flatness layer and the anode；In the pixel
Light shield layer is formed in confining layers；The pixel that the exposure anode is formed in the light shield layer and the pixel confining layer limits
Hole；OLED functional layers are formed on the anode exposed；Cathode is formed on the light shield layer and the OLED functional layers.
Further, the method that thin film transistor (TFT) is formed on substrate includes：Active layer is formed on the substrate；Institute
It states and the first insulating layer is formed on active layer；Grid is formed on first insulating layer；In the grid, the active layer and institute
It states and second insulating layer is formed on substrate；It is formed in the second insulating layer and extends through the second insulating layer to have with described
The source electrode and drain electrode of active layer connection；Wherein, the flatness layer is set to the source electrode, the drain electrode and the second insulating layer
On, the anode runs through the flatness layer to be connected with the drain electrode.
Further, the method that OLED functional layers are formed on the exposed anode includes：In the exposed anode
On sequentially form lamination hole occur layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer.
Further, the production method further includes：Cover board is formed on the cathode on the light shield layer.
Further, the light shield layer is formed in the pixel confining layer using black resin material.
Beneficial effects of the present invention：The present invention in pixel confining layer by forming light shield layer, so as to mask out picture
Element limits the light that is leaked out by side of OLED functional layers in hole, the problem of can eliminating the pixel light leakage of the prior art in this way,
And then improve the display effect of display panel.
Description of the drawings
What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention
It will become clearer, in attached drawing：
Fig. 1 is the structure diagram of display panel according to an embodiment of the invention；
Fig. 2A to Fig. 2 K is the processing procedure figure of display panel according to an embodiment of the invention.
Specific embodiment
Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real
The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, provide these implementations
Example is in order to explain the principle of the present invention and its practical application, so as to make others skilled in the art it will be appreciated that the present invention
Various embodiments and be suitable for the various modifications of specific intended application.
In the accompanying drawings, for the sake of clarity, the thickness of layer and region is exaggerated.Identical label is in the whole instruction and attached
Identical component is represented in figure.
It will be appreciated that when layer, film, region or substrate when element be referred to as " " another element " on " when, should
Element can be directly on another element or there may also be intermediary elements.Selectively, when element is referred to as " directly
It is connected on " another element " on " when, there is no intermediary elements.
Fig. 1 is the structure diagram of display panel according to an embodiment of the invention.In fig. 1 it is shown that two anodes,
But a thin film transistor (TFT) of an anode connection is illustrated only, it should be understood that, each sun in display panel
Pole is required for connecting at least one thin film transistor (TFT).
With reference to Fig. 1, display panel according to an embodiment of the invention includes：Substrate 100, active layer 210, the first insulating layer
220th, grid 230, second insulating layer 240, source electrode 250, drain electrode 260, flatness layer 300, anode 400, pixel confining layer 500, screening
Photosphere 600, OLED functional layers 700, cathode 800 and cover board 900.
Specifically, substrate 100 can be for example flexible base board, but the present invention is not restricted to this.
Active layer 210 is set on substrate 100.Active layer 210 can be such as the material as non-crystalline silicon, low temperature polycrystalline silicon, IGZO
Material is formed, but the present invention is not restricted to this.First insulating layer 220 is set on active layer 210.Grid 230 is set to first
On insulating layer 220.Second insulating layer 240 is set on grid 230, active layer 210 and substrate 100.Source electrode 250 and drain electrode 260
Be set in second insulating layer 240, and source electrode 250 and drain electrode 260 extend through second insulating layer 240 with active layer 210
Connection.
Here, by active layer 210, the first insulating layer 220, grid 230, second insulating layer 240, source electrode 250, drain electrode 260
Thin film transistor (TFT) according to an embodiment of the invention is constituted, and the thin film transistor (TFT) of this spline structure is only one kind of the present invention
Embodiment, the structure of thin film transistor (TFT) of the invention are not restricted to this.
Flatness layer 300 is set in second insulating layer 240, source electrode 250 and drain electrode 260.Anode 400 is set to flatness layer
On 300 and run through flatness layer 300 to be connect with drain electrode 260.In the present embodiment, anode 400 has high reflectance.
Pixel confining layer 500 is set on anode 400 and flatness layer 300.Light shield layer 600 is set to pixel confining layer 500
On.The pixel in pixel confining layer 500 and light shield layer 600 with exposure anode 400 limits hole 510.
OLED functional layers 700 are set on exposed anode 400.As one embodiment of the present invention, OLED functions
Layer 700 sequentially includes from bottom to up：Layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer occur for hole；
But the structure of the OLED functional layers 700 of the present invention is not restricted to this.
Cathode 800 is set in pixel confining layer 500, light shield layer 600 and OLED functional layers 700.In the present embodiment, it is cloudy
Pole 800 has high transparency, but the present invention is not restricted to this.
Fig. 2A to Fig. 2 K is the processing procedure figure of display panel according to an embodiment of the invention.
The production method of display panel according to an embodiment of the invention includes step 1 to step 11.
Specifically, step 1：With reference to Fig. 2A, make form active layer 210 on the substrate 100.Active layer 210 can for example by
The materials such as non-crystalline silicon, low temperature polycrystalline silicon, IGZO are formed, but the present invention is not restricted to this.
Step 2：With reference to Fig. 2 B, made on active layer 210 and form the first insulating layer 220.
Step 3：With reference to Fig. 2 C, made on the first insulating layer 220 and form grid 230.
Step 4：With reference to Fig. 2 D, made on grid 230, active layer 210 and substrate 100 and form second insulating layer 240.
Step 5：With reference to Fig. 2 E, made in second insulating layer 240 and form source electrode 250 and drain electrode 260, wherein source electrode 250
Second insulating layer 240 is extended through with drain electrode 260 to be connect with active layer 210.
Here, the production method that thin film transistor (TFT) according to an embodiment of the invention is constituted by step 1 to step 5,
And the method for making thin film transistor (TFT) so is only one embodiment of the present invention, the making of thin film transistor (TFT) of the invention
Method is not restricted to this.
Step 6：With reference to Fig. 2 F, made in second insulating layer 240, source electrode 250 and drain electrode 260 and form flatness layer 300.
Step 7：With reference to Fig. 2 G, make and formed through sun of the flatness layer 300 to be connect with drain electrode 260 on flatness layer 300
Pole 400.In the present embodiment, anode 400 has high reflectance.
Step 8：With reference to Fig. 2 H, the pixel confining layer 500 for forming lamination is made on anode 400 and flatness layer 300 and is hidden
Photosphere 600.
Step 9：With reference to Fig. 2 I, the pixel for forming exposure anode 400 is made in pixel confining layer 500 and light shield layer 600
Limit hole 510.
Step 10：With reference to Fig. 2 J, made on exposed anode 400 and form OLED functional layers 700.One as the present invention
Kind embodiment makes the method for forming OLED functional layers 700 and includes：It is sequentially made on exposed anode 400 and forms lamination
Hole occur layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer；But the making OLED work(of the present invention
The method of ergosphere 700 is not restricted to this.
Step 11：With reference to Fig. 2 K, make and formed in pixel confining layer 500, light shield layer 600 and OLED functional layers 700
Cathode 800.In the present embodiment, cathode 800 has high transparency, but the present invention is not restricted to this.
In conclusion according to an embodiment of the invention, by forming light shield layer in pixel confining layer, so as to cover
Fall pixel and limit the light that is leaked out by side of OLED functional layers in hole, the pixel light leakage that can eliminate the prior art in this way is asked
Topic, and then improve the display effect of display panel.
Although the present invention has shown and described with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case where not departing from the spirit and scope of the present invention limited by claim and its equivalent, can carry out herein form and
Various change in details.
Claims (10)
1. a kind of display panel, which is characterized in that including：
Substrate；
Thin film transistor (TFT) is set on the substrate；
Flatness layer is set on the thin film transistor (TFT)；
Anode is set on the flatness layer and is connect through the flatness layer with the thin film transistor (TFT)；
Pixel confining layer is set on the flatness layer；
Light shield layer is set in the pixel confining layer, has the exposure sun in the light shield layer and the pixel confining layer
The pixel of pole limits hole；
OLED functional layers are set on the anode exposed；
Cathode is set on the light shield layer and the OLED functional layers.
2. display panel according to claim 1, which is characterized in that the thin film transistor (TFT) includes：
Active layer is set on the substrate；
First insulating layer is set on the active layer；
Grid is set on first insulating layer；
Second insulating layer is set on the grid, the active layer and the substrate；
Source electrode and drain electrode is set in the second insulating layer and extends through the second insulating layer to connect with the active layer
It connects, the flatness layer is set in the source electrode, the drain electrode and the second insulating layer, and the anode runs through the flatness layer
To be connected with the drain electrode.
3. display panel according to claim 1 or 2, which is characterized in that the OLED functional layers are from the anode to institute
Cathode sequence is stated to include：Layer, hole transmission layer, organic luminous layer, electron transfer layer, electron injecting layer occur for hole.
4. display panel according to claim 1, which is characterized in that the display panel further includes cover board, the cover board
It is set on the cathode on the light shield layer.
5. display panel according to claim 1, which is characterized in that the light shield layer is made of black resin material.
6. a kind of production method of display panel, which is characterized in that including：
Thin film transistor (TFT) is formed on substrate；
Flatness layer is formed on the thin film transistor (TFT)；
It is formed on the flatness layer through anode of the flatness layer to be connect with the thin film transistor (TFT)；
Pixel confining layer is formed on the flatness layer and the anode；
Light shield layer is formed in the pixel confining layer；
The pixel that the exposure anode is formed in the light shield layer and the pixel confining layer limits hole；
OLED functional layers are formed on the anode exposed；
Cathode is formed on the light shield layer and the OLED functional layers.
7. the production method of display panel according to claim 6, which is characterized in that thin film transistor (TFT) is formed on substrate
Method include：
Active layer is formed on the substrate；
The first insulating layer is formed on the active layer；
Grid is formed on first insulating layer；
Second insulating layer is formed on the grid, the active layer and the substrate；
The source electrode for extending through the second insulating layer to be connect with the active layer and leakage are formed in the second insulating layer
Pole；Wherein, the flatness layer is set in the source electrode, the drain electrode and the second insulating layer, and the anode is through described
Flatness layer with it is described drain electrode connect.
8. the production method of the display panel described according to claim 6 or 7, which is characterized in that on the exposed anode
The method for forming OLED functional layers includes：Layer, hole transport occur for the hole that lamination is sequentially formed on the exposed anode
Layer, organic luminous layer, electron transfer layer, electron injecting layer.
9. the production method of display panel according to claim 6, which is characterized in that the production method further includes：
Cover board is formed on the cathode on the light shield layer.
10. the production method of display panel according to claim 6, which is characterized in that using black resin material in institute
It states and the light shield layer is formed in pixel confining layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711481256.9A CN108231840A (en) | 2017-12-29 | 2017-12-29 | Display panel and preparation method thereof |
| PCT/CN2018/074095 WO2019127801A1 (en) | 2017-12-29 | 2018-01-25 | Display panel and manufacturing method therefor |
| US15/945,381 US20190206963A1 (en) | 2017-12-29 | 2018-04-04 | Display panel and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711481256.9A CN108231840A (en) | 2017-12-29 | 2017-12-29 | Display panel and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108231840A true CN108231840A (en) | 2018-06-29 |
Family
ID=62646273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711481256.9A Pending CN108231840A (en) | 2017-12-29 | 2017-12-29 | Display panel and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108231840A (en) |
| WO (1) | WO2019127801A1 (en) |
Cited By (12)
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| CN109037277A (en) * | 2018-07-17 | 2018-12-18 | 深圳市华星光电技术有限公司 | A kind of preparation method and OLED display panel, display device of OLED display panel |
| CN109273497A (en) * | 2018-09-21 | 2019-01-25 | 京东方科技集团股份有限公司 | A kind of oled display substrate and display device |
| CN109585518A (en) * | 2018-12-17 | 2019-04-05 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN109616497A (en) * | 2018-11-30 | 2019-04-12 | 武汉华星光电技术有限公司 | OLED display panel |
| CN109671868A (en) * | 2019-02-25 | 2019-04-23 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display panel |
| WO2020024427A1 (en) * | 2018-08-03 | 2020-02-06 | 武汉华星光电半导体显示技术有限公司 | Oled display panel and method for manufacturing same |
| CN111081745A (en) * | 2019-12-16 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111106157A (en) * | 2020-01-07 | 2020-05-05 | 武汉华星光电半导体显示技术有限公司 | Display device |
| CN111293151A (en) * | 2020-02-20 | 2020-06-16 | 深圳市华星光电半导体显示技术有限公司 | Pixel BANK preparation method, pixel BANK structure, pixel structure and display panel |
| CN111900185A (en) * | 2020-06-17 | 2020-11-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN112599572A (en) * | 2020-12-09 | 2021-04-02 | 深圳市华星光电半导体显示技术有限公司 | OLED device and manufacturing method thereof |
| CN112951847A (en) * | 2021-01-28 | 2021-06-11 | 武汉华星光电技术有限公司 | Display panel and display device |
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| WO2021139010A1 (en) * | 2020-01-07 | 2021-07-15 | 武汉华星光电半导体显示技术有限公司 | Display device |
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| WO2021164120A1 (en) * | 2020-02-20 | 2021-08-26 | 深圳市华星光电半导体显示技术有限公司 | Pixel bank preparation method, pixel bank structure, pixel structure and display panel |
| US11404680B2 (en) | 2020-02-20 | 2022-08-02 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel bank manufacturing method, pixel bank structure, pixel structure, and display panel |
| CN111900185B (en) * | 2020-06-17 | 2021-06-25 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN111900185A (en) * | 2020-06-17 | 2020-11-06 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
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