CN1842232A - Organic electroluminescence display panel and method for manufacturing the same - Google Patents
Organic electroluminescence display panel and method for manufacturing the same Download PDFInfo
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Abstract
The invention relates to an organic electroluminescence display panel, which mainly comprises a base plate, an active component array, a transparent electrode layer, a dark slide layer, an organic function layer and an up electrode layer. The base plate has a plurality of element areas, each element area is divided into unit area and lighting area; the active component array is positioned on the unit area; the transparent electrode layer is positioned on the base plate and connected with the active component array. The dark slide layer is positioned on the base plate, which at least covers the active component array and exposes the transparent electrode layer. The organic function layer is positioned on that transparent electrode layer; the up electrode layer is positioned on the organic function layer.
Description
Technical field
The present invention relates to a kind of two-d display panel, and particularly relate to a kind of organic EL display panel (organic electroluminescent display is called for short OELD) and manufacture method thereof.
Background technology
The development rapidly of multimedia society is indebted to the tremendous progress of semiconductor element or display unit mostly.With regard to display, have that high image quality, space availability ratio are good, the flat-panel screens (Flat Panel Display) of low consumpting power, advantageous characteristic such as radiationless becomes the main flow in market gradually.
At present flat-panel screens on the market comprise LCD (Liquid Crystal Display, LCD), display of organic electroluminescence and plasma display (Plasma Display Panel, PDP) or the like.Wherein, because advantages such as display of organic electroluminescence has or not angle limitations, low manufacturing cost, high answer speed (being about more than hundred times of liquid crystal), power saving, DC driven, operating temperature range is big, in light weight and volume is little, and ten minutes meets the characteristic requirement of multimedia era display, therefore have great development potentiality, and be expected to become the main flow of flat-panel screens of future generation.
With regard to type of drive, display of organic electroluminescence can be divided into active and the passive type display of organic electroluminescence.Because the life-span and the luminous efficiency of passive device can decrease sharply with the increase of size and resolution, therefore compare the active driving of the many employings of current display of organic electroluminescence with known many low order display of organic electroluminescence that drive with passive mode.
Produce a kind of active-matrix formula organic EL display panel (active matrixorganic electroluminescent display panel) at present, it mainly is to form organic function layer on substrate, wherein for example be formed with thin film transistor (TFT) array (thin film transistor array, TFT array) on the substrate.And, on organic function layer, form cathode layer.So, just, it is luminous to drive this active-matrix formula organic EL display panel by thin film transistor (TFT) array.
In addition, organic EL display panel also can be divided into two kinds of bottom-emission type and top emission types.Bottom-emission type organic EL display panel mainly is to form transparent anode layer, organic material layer and metallic cathode layer successively on substrate, though wherein the light that organic function layer sent is towards all possible direction, the light towards the top can be reflected by the metallic cathode layer and penetrate down.Therefore, most light can send from the bottom of organic EL display panel by behind the transparent anode layer.
Fig. 1 is the profile of known a kind of bottom-emission type organic EL display panel.As shown in Figure 1, known organic EL display panel 100 comprises substrate 110, a plurality of active element 120, dielectric layer 130, transparent electrode layer 140, organic function layer 150 and cathode layer 160.Wherein, active element 120 is arranged on the substrate 110, and dielectric layer 130 also is arranged on the substrate 110, and covers active element 120.In addition, transparent electrode layer 140 is coupled to active element 120 by the opening 130a of dielectric layer 130, and organic function layer 150 is arranged on the transparent electrode layer 140, and cathode layer 160 is arranged on the organic function layer 150.Generally speaking, active element 120 is thin-film transistor normally, wherein Bu Fen thin-film transistor is in order to provide the function of switch, and the thin-film transistor of remainder is in order to provide the function of driving, and thin-film transistor can be amorphous silicon membrane transistor (amorphous silicon TFTs, be called for short a-Si TFTs) or low-temperature polysilicon film transistor (low temperature poly-silicon TFTs is called for short LTPSTFTs) etc.
Yet still there are some shortcomings in known organic EL display panel 100.For example, when the silicon layer of thin-film transistor during, will produce light leakage current by irradiate light that organic function layer produced.This light leakage current not only influences the electrical performance of thin-film transistor itself, and also can cause problems such as flicker or cross-talk when display shows the picture frame image.In addition, the mutual light leak between the adjacent image point also may cause colour mixture, and influence shows contrast (contrast), causes display quality to descend.
Summary of the invention
Therefore, purpose of the present invention just provides a kind of organic EL display panel and manufacture method thereof, and it is that the light that active element and organic function layer are sent is isolated, to avoid the light leakage phenomena between active element generation light leakage current and the adjacent image point.
Based on above-mentioned or other purpose, the present invention proposes a kind of organic EL display panel, and it mainly comprises substrate, active device array, transparent electrode layer, light shield layer, organic function layer and upper electrode layer.Wherein, substrate has a plurality of pixel regions, and wherein each pixel region is divided into element region and luminous zone, and active device array is arranged in the element region of substrate, and transparent electrode layer is arranged on the substrate, and is coupled to active device array.In addition, light shield layer is arranged on the substrate, and light shield layer covers active device array at least, and exposes the transparent electrode layer in the luminous zone.In addition, organic function layer is arranged on the transparent electrode layer that light shield layer exposes, and upper electrode layer is arranged on the organic function layer.
Described according to preferred embodiment of the present invention, above-mentioned organic EL display panel for example also comprises dielectric layer, and it is arranged on the substrate, and covers active device array.Wherein, dielectric layer has a plurality of openings, and to expose the active device array of part, transparent electrode layer then is coupled to active device array by these openings.
Described according to preferred embodiment of the present invention, above-mentioned dielectric layer for example also exposes the luminous zone of substrate, and it is provided with the transparent electrode layer of part.
Described according to one of the present invention preferred embodiment, above-mentioned active device array for example comprises a plurality of amorphous silicon film transistors (a-Si TFTs) or a plurality of low-temperature polysilicon film transistor (LTPSTFTs).
Described according to preferred embodiment of the present invention, the material of above-mentioned transparent electrode layer for example comprise indium tin oxide (indium-tin oxide, ITO) or indium-zinc oxide (indium-zinc oxide, IZO).
Described according to preferred embodiment of the present invention, the material of above-mentioned light shield layer for example is photosensitive resin (photosensitive resin).
Described according to preferred embodiment of the present invention, above-mentioned organic function layer comprises electric hole implanted layer (the hole injecting layer that stacks gradually, HIL), electric hole transport layer (hole transportinglayer, HTL), luminescent layer (emitting layer, EL), electron transfer layer (electrontransporting layer, ETL) and electron injecting layer (electron injecting layer, EIL).
The present invention also proposes a kind of manufacture method of organic EL display panel.At first, provide active elements array substrates, it has a plurality of pixel regions, and wherein each pixel region is divided into element region and luminous zone, and is provided with active device array in the element region.In addition, active elements array substrates is provided with transparent electrode layer, is coupled to active device array.Then, form light shield layer on active elements array substrates, this light shield layer covers active device array at least, and exposes the transparent electrode layer in the luminous zone.Then, on the transparent electrode layer that light shield layer exposed, form organic function layer.Afterwards, on organic function layer, form upper electrode layer.
Described according to preferred embodiment of the present invention, the step of above-mentioned formation light shield layer for example is included in and forms light-shielding material layers on the substrate, and this light-shielding material layers of patterning, to expose the transparent electrode layer in the luminous zone.In addition, the material of light shield layer for example is a photosensitive resin, and the method for patterning light-shielding material layers comprises and carries out little shadow operation.
Described according to preferred embodiment of the present invention, before forming transparent electrode layer, for example also be included on the active array base plate and form the dielectric layer with a plurality of openings, exposing the active device array of part, and transparent electrode layer is coupled to active device array by these openings.In addition, dielectric layer for example also exposes the luminous zone of active elements array substrates, and it is provided with the transparent electrode layer of part.
Described according to one of the present invention preferred embodiment, the step of above-mentioned formation organic function layer for example comprises and forms electric hole implanted layer, electric hole transport layer, luminescent layer, electron transfer layer and electron injecting layer successively.
In the present invention's organic EL display panel,, therefore can avoid the problem of light leakage current, and can reduce the light leakage phenomena between the adjacent image point because active element is subjected to the protection of light shield layer.Therefore, the present invention's organic EL display panel can have higher reliability and good display quality.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the profile of known a kind of bottom-emission type organic EL display panel.
Fig. 2 is the profile of a kind of organic EL display panel of the present invention's preferred embodiment.
Fig. 3 A～3F is followed successively by the manufacturing process profile that has the organic EL display panel of amorphous silicon film transistor in the present invention's the preferred embodiment.
Fig. 4 A～4H is followed successively by the manufacturing process profile that has the organic EL display panel of low-temperature polysilicon film transistor in the present invention's the preferred embodiment.
The main element description of symbols
100: organic EL display panel
110: substrate
120: a plurality of active elements
130: dielectric layer
130a: opening
140: transparent electrode layer
150: organic function layer
160: cathode layer
200: organic EL display panel
210: substrate
212: pixel region
212a: element region
212b: luminous zone
220: active device array
222: active element
240: transparent electrode layer
242: transparency electrode
250: organic function layer
260: upper electrode layer
262: top electrode
270: light shield layer
280: amorphous silicon film transistor
282: grid
284: gate insulator
286: channel layer
288: source/drain
290: dielectric layer
290a: opening
310: polycrystalline SiTFT
312: grid
314: the island polysilicon layer
314a: channel region
314b: source/drain regions
316: gate insulator
320: core dielectric
320a: opening
330: the source/drain metal contact
340: dielectric layer
340a: opening
Embodiment
Fig. 2 is the profile of a kind of organic EL display panel of the present invention's preferred embodiment.As shown in Figure 2, display of organic electroluminescence 200 mainly comprises substrate 210, active device array 220, transparent electrode layer 240, light shield layer 270, organic function layer 250 and upper electrode layer 260.Substrate 210 has a plurality of pixel regions 212, and each pixel region 212 is divided into element region 212a and luminous zone 212b, and wherein element region 212a is provided with active device array 220, and it comprises a plurality of active elements 222.
Refer again to Fig. 2, transparent electrode layer 240 comprises a plurality of transparency electrodes 242, and it is arranged on the substrate 210, and is coupled to corresponding active device array 220.In addition, light shield layer 270 is arranged on the substrate 210, and this light shield layer 270 covers active element 222 at least, and exposes the partially transparent electrode 242 in the 212b of luminous zone.In addition, organic function layer 250 is arranged on 270 exposed portions transparency electrodes 242 of light shield layer, and upper electrode layer 260 for example comprises a plurality of top electrodes 262, and it is arranged on the organic function layer 250.
Based on above-mentioned,,, therefore can avoid photo leakage current significantly, and can reduce the mixed light problem between the adjacent image point district with protection active element 222 because light shield layer 270 can block the light that is sent from organic function layer 250.
In the present embodiment, difference based on the material of channel layer (not marking among the figure), active element 222 for example can be divided into amorphous silicon film transistor or low-temperature polysilicon film transistor, some of thin-film transistors are in order to as switch element, and the thin-film transistor of remainder is in order to as driving element.Certainly, the employed transistor types of the present invention's organic EL display panel also is not limited to this.Hereinafter will the structure and the manufacture method thereof of this organic EL display panel 200 be elaborated.
Fig. 3 A～3F is followed successively by the manufacturing process profile that has the organic EL display panel of amorphous silicon film transistor in the present invention's the preferred embodiment.Though have the pixel structure of a plurality of arrayed on the organic EL display panel, so in order to make explanation more clear and simple, Fig. 3 A～3F has only represented the manufacture process of single pixel structure.
At first, as shown in Figure 3A, form grid 282 earlier on substrate 210, wherein dividing on the substrate 210 has element region 212a and luminous zone 212b.Afterwards, form gate insulator (gate-insulating layer) 284 on grid 282 and substrate 210, and form channel layer 286 on the gate insulator above the grid 282 284, wherein the material of channel layer 286 is amorphous silicons.Then, form source/drain 288 in the both sides of channel layer 286, and this grid 282, channel layer 286 and source/drain 288 constitute amorphous silicon film transistor 280 in the element region 212a of substrate 210.
Afterwards, shown in Fig. 3 B, form dielectric layer 290 on amorphous silicon film transistor 280, the material of this dielectric layer 290 for example is silicon nitride (silicon nitride).Then, in dielectric layer 290, form opening 290a by a light shield operation.In a preferred embodiment, the part dielectric layer 290 that is positioned at the luminous zone 212b of substrate 210 also can be removed by this light shield operation simultaneously with gate insulator 284.
Then, shown in Fig. 3 C, on dielectric layer 290, form transparency electrode 242, and transparency electrode 242 is coupled to the source/drain 288 of amorphous silicon film transistor 280 by opening 290a.In a preferred embodiment, dielectric layer 290 and gate insulator 284 expose the luminous zone 212b of substrate 210, and therefore the transparency electrode 242 of part can be formed directly on the 212b of the luminous zone of substrate 210.The method that forms transparency electrode for example comprises chemical vapour deposition (CVD) (chemical vapour deposition, be called for short CVD), or physical vapour deposition (PVD) (physical vapour deposition, be called for short PVD), it for example is to form transparency electrode 242 with hot evaporation (thermal evaporation), electron beam plated film (electron beam coating) or sputter (sputtering).In the present invention, transparency electrode 242 for example is made by transparent conductive material, wherein this transparent conductive material for example be indium tin oxide (indium-tin oxide, ITO) or indium-zinc oxide (indium-zinc oxide, IZO).
Afterwards, shown in Fig. 3 D, on substrate 210, form light shield layer 270, the material that wherein constitutes light shield layer 270 for example is a photosensitive resin, carry out little shadow operation (photolithography process) then,, and expose the interior transparency electrode 242 of luminous zone 212b with this light shield layer 270 of patterning.
Then, shown in Fig. 3 E, form organic function layer 250 on the transparency electrode 242 that light shield layer 270 is exposed, its formation method for example comprises vacuum vapour deposition (vacuumevaporation), hot vapour deposition method (thermal evaporation), method of spin coating (spincoating) or other deposition process.According to selected material, affiliated those skilled in the art can select suitable method.In the present invention, transparency electrode 242 is as anode, and organic function layer 250 then is the multiple-level stack structure on the transparency electrode 242, and it comprises electric hole implanted layer, electric hole transport layer, luminescent layer, electron transfer layer and electron injecting layer from down to up successively.Certainly, in another embodiment of the present invention, organic function layer 250 also can be single layer structure (ambipolar, light-emitting layer), double-decker (comprising electric hole transport layer and electric transmission luminescent layer) or three-decker (comprising electric hole transport layer, luminescent layer and electron transfer layer).Therefore, the present invention does not limit the number of plies of piling up of organic function layer 250, and generally speaking, this piles up the design that the number of plies depends on actual components.
Afterwards, shown in Fig. 3 F, on organic function layer 250, form top electrode 262.In this embodiment, top electrode 262 is as cathode layer, and for example is made by metal material.According to above-mentioned manufacture process, just can form organic EL display panel 200 as shown in Figure 2.
Fig. 4 A～4H is followed successively by the manufacturing process profile that has the organic EL display panel of low-temperature polysilicon film transistor in the present invention's the preferred embodiment.Though have the pixel structure of a plurality of arrayed on the organic EL display panel, so in order to make explanation more clear and simple, Fig. 4 A～4H has only represented the manufacture process of single pixel structure.
At first, shown in Fig. 4 A, on the element region 212a of substrate 210, form low-temperature polysilicon film transistor 310, wherein, grid 312 is arranged on the substrate 210, and an island polysilicon layer 314 is between grid 312 and substrate 210, and gate insulator 316 is between grid 312 and island polysilicon layer 314.In addition, island polysilicon layer 314 comprises channel region 314a and impure source/drain region 314b, and wherein channel region 314a is positioned at grid 312 belows, and impure source/drain region 314b then is positioned at the both sides of channel region 314a.Polycrystalline silicon material has higher electron mobility (electron mobility), and when making low-temperature polysilicon film transistor 310, also can in peripheral circuit, make CMOS (Complementary Metal Oxide Semiconductor) (complementarymetal-oxide-semiconductor is called for short CMOS) transistor simultaneously.Yet, should be the person of ordinary skill in the field about this low-temperature polysilicon film transistor 310 or the transistorized detailed manufacture process of CMOS (Complementary Metal Oxide Semiconductor) and know, its detailed manufacture process will no longer repeat to give unnecessary details.
Afterwards, shown in Fig. 4 B, on substrate 210, form core dielectric 320, in core dielectric 320 and gate insulator 316, form opening 320a then to expose the source/drain regions 314b of part to cover island polysilicon layer 314 and grid 312.
Then, shown in Fig. 4 C, on core dielectric 320, form source/drain metal contact 330, and source/drain metal contact 330 is coupled to source/drain regions 314b by opening 320a.
Then, shown in Fig. 4 D, on substrate 210, form another dielectric layer 340, to cover source/drain metal contact 330 and core dielectric 320.Afterwards, carry out the light shield operation, in dielectric layer 340, to form opening 340a, the source/drain metal contact 330 of this opening 340a expose portion.The material that constitutes gate insulator 316, core dielectric 320 and dielectric layer 340 for example is a silicon nitride.In a preferred embodiment, the part of grid pole insulating barrier 316, core dielectric 320 and the dielectric layer 340 that are positioned at the luminous zone 212b of substrate 210 also can be removed simultaneously by this light shield operation.
Then, shown in Fig. 4 E, on dielectric layer 340, form transparency electrode 242, and transparency electrode 242 is coupled to source/drain metal contact 330 by opening 340a.In a preferred embodiment, gate insulator 316, core dielectric 320 and dielectric layer 340 expose the luminous zone 212b of substrate 210, and therefore the transparency electrode 242 of part can be formed directly on the 212b of the luminous zone of substrate 210.In the present invention, the material of transparency electrode 242 for example is a transparent conductive material, and it for example comprises indium tin oxide or indium-zinc oxide.
Afterwards, shown in Fig. 4 F～4H, on substrate 210, form light shield layer 270, organic function layer 250 and top electrode 262 successively.According to above-mentioned manufacture process, just can form organic EL display panel shown in Figure 2 200, wherein manufacture process no longer repeats to give unnecessary details at this shown in Fig. 3 A to 3F in detail.
In sum, the present invention's organic EL display panel and manufacture method thereof have the following advantages at least:
(1) on active element, forms light shield layer,, therefore can avoid photo leakage current significantly, and then improve reliability and display quality in order to block the light that sends from organic function layer.
(2) the partially transparent electrode can directly be arranged on the luminous zone of substrate, and therefore formed organic function layer can be lower than active element, to promote shaded effect.
(3) light shield layer can effectively reduce the light leak between the adjacent image point, and then improves the demonstration contrast.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the invention; when can doing a little change and improvement, so the present invention's protection range is as the criterion when looking the claim person of defining.
Claims (14)
1. organic EL display panel is characterized in that comprising:
Substrate has a plurality of pixel regions, and wherein each pixel region is divided element region and luminous zone;
Active device array is arranged in the said elements district of aforesaid substrate;
Transparent electrode layer is arranged on the aforesaid substrate, and is coupled to above-mentioned active device array;
Light shield layer is arranged on the aforesaid substrate, and wherein this light shield layer covers above-mentioned active device array at least, and exposes the above-mentioned transparent electrode layer in the above-mentioned luminous zone;
Organic function layer is arranged on the above-mentioned transparent electrode layer that above-mentioned light shield layer exposes; And
Upper electrode layer is arranged on the above-mentioned organic function layer.
2. organic EL display panel according to claim 1, it is characterized in that also comprising dielectric layer, it is arranged on the aforesaid substrate, to cover above-mentioned active device array, wherein this dielectric layer has a plurality of openings, to expose the above-mentioned active device array of part, and above-mentioned transparent electrode layer is coupled to above-mentioned active device array by above-mentioned opening.
3. organic EL display panel according to claim 2 is characterized in that above-mentioned dielectric layer also exposes the above-mentioned luminous zone of aforesaid substrate, and it is provided with the above-mentioned transparent electrode layer of part.
4. organic EL display panel according to claim 1 is characterized in that above-mentioned active device array comprises a kind of in a plurality of amorphous silicon film transistors and a plurality of low-temperature polysilicon film transistor.
5. organic EL display panel according to claim 1, the material that it is characterized in that above-mentioned transparent electrode layer comprise a kind of in indium tin oxide and the indium-zinc oxide.
6. organic EL display panel according to claim 1, the material that it is characterized in that above-mentioned light shield layer is a photosensitive resin.
7. organic EL display panel according to claim 1 is characterized in that above-mentioned organic function layer comprises the electric hole implanted layer that stacks gradually, electric hole transport layer, luminescent layer, electron transfer layer and electron injecting layer.
8. method of making organic EL display panel is characterized in that comprising:
Active elements array substrates is provided, it has a plurality of pixel regions, wherein each pixel region is divided element region and luminous zone, be formed with active device array in the said elements district of this active elements array substrates, and be formed with transparent electrode layer on this active elements array substrates, it is coupled to above-mentioned active device array;
Form light shield layer on above-mentioned active elements array substrates, wherein this light shield layer covers above-mentioned active device array at least, and exposes the above-mentioned transparent electrode layer in the above-mentioned luminous zone;
On the above-mentioned transparent electrode layer that above-mentioned light shield layer exposed, form organic function layer; And
On above-mentioned organic function layer, form upper electrode layer.
9. the method for manufacturing organic EL display panel according to claim 8 is characterized in that the step that forms light shield layer comprises:
On above-mentioned active elements array substrates, form light-shielding material layers; And
The above-mentioned light-shielding material layers of patterning is to expose the above-mentioned transparent electrode layer in the above-mentioned luminous zone.
10. the method for manufacturing organic EL display panel according to claim 9, the material that it is characterized in that above-mentioned light-shielding material layers is a photosensitive resin, and the method for this light-shielding material layers of patterning comprises and carries out little shadow operation.
11. the method for manufacturing organic EL display panel according to claim 8, it is characterized in that before forming above-mentioned transparent electrode layer, also be included in and form dielectric layer on the above-mentioned active elements array substrates with a plurality of openings, to expose the above-mentioned active device array of part, and above-mentioned transparent electrode layer is coupled to above-mentioned active device array by above-mentioned opening.
12. the method for manufacturing organic EL display panel according to claim 11 is characterized in that above-mentioned dielectric layer also exposes the above-mentioned luminous zone of above-mentioned active elements array substrates, it is provided with the above-mentioned transparent electrode layer of part.
13. comprising, the method for manufacturing organic EL display panel according to claim 8, the step that it is characterized in that forming above-mentioned organic function layer form electric hole implanted layer, electric hole transport layer, luminescent layer, electron transfer layer and electron injecting layer successively.
14. the method for manufacturing organic EL display panel according to claim 8 is characterized in that above-mentioned active device array comprises a kind of in a plurality of amorphous silicon film transistors and a plurality of low-temperature polysilicon film transistor.
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| CN 200510059341 CN1842232A (en) | 2005-03-29 | 2005-03-29 | Organic electroluminescence display panel and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104037195A (en) * | 2013-03-08 | 2014-09-10 | 株式会社半导体能源研究所 | Light-emitting device |
| CN108231840A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN109308435A (en) * | 2017-07-27 | 2019-02-05 | 固安翌光科技有限公司 | OLED screen body and optical fingerprint identification device as fingerprint identification device light source |
| US11664392B2 (en) | 2017-12-14 | 2023-05-30 | Boe Technology Group Co., Ltd. | Flexible array substrate, manufacturing method thereof and display device |
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2005
- 2005-03-29 CN CN 200510059341 patent/CN1842232A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037195A (en) * | 2013-03-08 | 2014-09-10 | 株式会社半导体能源研究所 | Light-emitting device |
| CN104037195B (en) * | 2013-03-08 | 2018-05-22 | 株式会社半导体能源研究所 | Light-emitting device |
| CN109308435A (en) * | 2017-07-27 | 2019-02-05 | 固安翌光科技有限公司 | OLED screen body and optical fingerprint identification device as fingerprint identification device light source |
| CN109308435B (en) * | 2017-07-27 | 2023-12-22 | 固安翌光科技有限公司 | OLED screen body used as light source of fingerprint identification device and optical fingerprint identification device |
| US11664392B2 (en) | 2017-12-14 | 2023-05-30 | Boe Technology Group Co., Ltd. | Flexible array substrate, manufacturing method thereof and display device |
| US11830886B2 (en) | 2017-12-14 | 2023-11-28 | Boe Technology Group Co., Ltd. | Flexible array substrate, manufacturing method thereof and display device |
| CN108231840A (en) * | 2017-12-29 | 2018-06-29 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2019127801A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method therefor |
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