CN1587939A - Multilayer structure bonded seal protective capacity pressure sensor and producing method - Google Patents
Multilayer structure bonded seal protective capacity pressure sensor and producing method Download PDFInfo
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- CN1587939A CN1587939A CN 200410078387 CN200410078387A CN1587939A CN 1587939 A CN1587939 A CN 1587939A CN 200410078387 CN200410078387 CN 200410078387 CN 200410078387 A CN200410078387 A CN 200410078387A CN 1587939 A CN1587939 A CN 1587939A
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Abstract
Multi-structure linkage enclosed protecting capacitance pressure sensor and its manufacturing method relate to a pressure sensor, supplying sensor with good hermetical characteristic, stable performance, excellent bearing capacity, high linearity and sensibility, and technical method with good versatility and low manufacturing cost, having prime silicon slice, glass substrate, enclosed glass, silicon film electron and capacitance cavity electron. Wash, dry, oxidize the prime silicon slice, erode capacitance cavity, then spread to form P+layer or PN node of film, creating metal electron; isolation glass is made on metal electron, prime silicon slice and glass slice is linked; dual-plane polishing glass slice used for enclosing glass is linked with protecting silicon slice; enclosing glass is isolation wall has static electricity linkage with enclosing glass. Use linkage structure of two pieces of silicon and two pieces of glass, and multi-structure static electricity linkage technique enclosing capacitance cavity, to produce capacitance cavity type micro pressure sensor, avoiding effectively the problem of capacitance cavity enclosing linkage.
Description
Technical field
The present invention relates to a kind of pressure transducer, especially a kind of multilayer structure bonded seal protective capacity pressure sensor.
Background technology
Because silicon materials have good mechanical property,, the means of making sensor of silicon materials have just been arranged along with the maturation of semiconductor technology.What at first, study, make is silicon piezoresistance type pressure sensor.Silicon piezoresistance type pressure sensor has that size is little, structure and characteristics such as manufacture craft is simple, sensing sensitivity height, and weak point is the poor anti jamming capability of sensor, and temperature effect is big.The capacitance pressure transducer, of making by silicon and glass bonding except have with silicon piezoresistance type pressure sensor that size is little, the characteristics such as structure, manufacture craft are simple, sensing sensitivity height; have also that structural stability is good, intensity is high, antijamming capability is strong, measurement stability is good, temperature effect is little; desirable zero-pressure characteristic and overload protection are arranged, and overload reaches 20000% characteristics such as can not damage.The capacitance cavity sealing of silex glass capacitance pressure transducer, is a problem, and reason is to make the sealing adhesives simultaneously glass, silicon and metal all be had very difficulty or even impossible of good adhesive property.In order to address this problem, people select for use various material to seal the groove of extraction electrode, but effect is all undesirable.
Notification number is provided with silicon chip, glass substrate, sealing silicon chip and output stage for the patent of CN1156681C provides a kind of pressure transducer and manufacture craft thereof of electrostatic bonding capacitor cavity; The lower surface of last silicon chip is established capacitor cavity; The last polished surface of glass substrate is provided with capacitance cavity electrode and membrance electrode, following polished surface is provided with contact electrode, establish the perforation aperture up and down between the polished surface, connect aperture and be communicated with capacitance cavity electrode and contact electrode respectively, the upper surface and the contact electrode of sealing silicon chip link together by electrostatic bonding; Establish output stage respectively on sealing silicon chip and membrance electrode, the sensor output stage on the membrance electrode passes the open ports of silicon chip.
Summary of the invention
The present invention aims to provide that a kind of electric capacity annular seal space sealing characteristics is good, structure and operating characteristic stablize, bear that overvoltage capabilities is strong, the linearity and capacitive pressure transducer highly sensitive, that power consumption is low, size is little.
Another object of the present invention is to provide a kind of method of avoiding on the Glass fitting of pressure transducer perforation processing, performance index are better, technological process is produced easily in batch, processing technology has versatility, cost of manufacture is lower manufacturing multilayer structure bonded seal protective capacity pressure sensor.
For this reason; the said multilayer structure bonded seal protective capacity pressure sensor of the present invention adopts the structural design scheme of 2 silicon and 2 sheet glass bondings; to there be the cavity of electrode open, and do not have electrode in the electric capacity seal chamber, thereby solve the bonding difficult problem of electric capacity annular seal space sealing effectively.
The said multilayer structure bonded seal protective capacity pressure sensor of the present invention is provided with
Main silicon chip, the lower surface of main silicon chip is a silicon diaphragm, establishes the pressure experience diaphragm on the silicon diaphragm, is provided with capacitor cavity at the lower surface of main silicon chip, establishes the insulation blocking wall at pressure experience diaphragm periphery, establishes open ports on the main silicon chip of pressure experience diaphragm one side;
Glass substrate, the upper surface of glass substrate are polished surface, and with the lower surface bonding of main silicon chip;
Seal glass is used for sealed capacitor cavity, and the surface bond of the insulation blocking wall on the lower surface of seal glass and the main silicon chip forms seal chamber;
The protection silicon chip, the upper surface of protection silicon chip and the lower surface bonding of seal glass;
The silicon diaphragm electrode is located on the silicon diaphragm of main silicon chip open ports, and is connected to form an extraction electrode of electric capacity by extension line;
The capacitance cavity electrode is located on the upper surface of glass substrate, and upper surface is a polished surface, and is connected to form another extraction electrode of electric capacity by extension line.
Silicon diaphragm can be square or circular, is by P
+The silicon diaphragm that etching or PN junction chemical etching or SOI (silicon on insulator) silicon wafer to manufacture forms.
Preferably establish insulation course on the capacitance cavity electrode, contact with the capacitance cavity electrode when being used to prevent the silicon diaphragm distortion.
Preferably establish groove between the open ports on capacitor cavity and the main silicon chip, be used for the capacitance cavity electrode and extend through this groove,, and be used to pass through actuating medium by the open ports extraction electrode from capacitor cavity.
The silicon diaphragm electrode can be made on the silicon diaphragm of open ports below by splash-proofing sputtering metal.
Said its step of multilayer structure bonded seal protective capacity pressure sensor manufacture method of the present invention is as follows:
1, main silicon chip is cleaned, dries after, oxidation in oxidation furnace, etching capacitance cavity, deoxidation layer;
2, main silicon slice placed spreads at diffusion furnace behind the good capacitance cavity of etching, forms the P of diaphragm
+Layer or PN junction;
3, to do the metal electrode of producing on glass of electrode;
4, on metal electrode, make one deck insulating glass;
5, after the main silicon chip that will carry out capacitor cavity cleans, dries, stand-by;
6, will carry out the flushing of glass (as glass substrate) sheet, the oven dry of electrode, glass lined egative film top electrode will be aimed at capacitance cavity on the main silicon chip, main silicon chip will be connected with the glass sheet bonding;
7, the main silicon chip upper surface of bonding is made the insulation blocking wall of silicon diaphragm;
8, open the electrode open ports, expose electrode on glass;
9, metal is produced on the P that links to each other with the pressure experience film
+On the film;
10, will as the protection silicon chip silicon chip clean, dry after, oxidation in oxidation furnace;
11, will be as the glass sheet flushing of the twin polishing of seal glass, dry back and protection wafer bonding;
12, electrostatic bonding is carried out on the surface of seal glass lower surface behind the bonding and insulation blocking wall in a vacuum, finished the sealing of vacuum capacitance cavity.
In manufacturing process, can make the two-sided resist coating of main silicon chip of sensor, preceding baking, single face exposure, development, back baking with being used to, in hydrogen fluoride solution, carve required figure behind the deoxidation layer, remove photoresist.Again with the method for dry method or wet etching, by the protection of oxide layer, on the silicon chip of existing oxide layer figure etch silicon to the capacitance cavity desired depth, the deoxidation layer.Splash-proofing sputtering metal after will doing the gluing on glass of electrode, photoetching, development, baking is made metal electrode with the method for peeling off.After the making of having finished metal electrode, need on electrode, make one deck insulating glass, the purpose of insulation course is that the capacitance cavity electrode can not contact with silicon diaphragm when silicon diaphragm is run into the vacuum chamber bottom.After can using toluene, acetone, anhydrous alcohol ultrasonic respectively the glass lined egative film of carrying out electrode, with deionized water rinsing, oven dry.Subsequently, in super stationary ring border, glass lined egative film top electrode aimed at the capacitance cavity on the main silicon chip, and make and contact, utilize heating then, add static bonding process main silicon chip and glass sheet are bonded together.The upper surface of the main silicon chip of bonding is carried out photoetching to form the figure of deep etching, lose deeply then, form the insulation blocking wall of silicon diaphragm at last.Available dry etching is opened the open ports of electrode, and electrode on glass is exposed so that the welding electrode extension line.Available magnetron sputtering technique is made in metal the P that links to each other with the pressure experience film
+On the film.Be used for protecting the sealing silicon chip of silicon chip carry out standard cleaning, drying, after the oxidation furnace oxidation, single face resist coating, preceding baking, single face exposure, develop, the back baking, carve figure.The glass sheet that is used for the twin polishing of seal glass can use respectively toluene, acetone, anhydrous alcohol ultrasonic, use deionized water rinsing, dry back and protection wafer bonding.With the device behind the bonding, carry out deep etch.To carry out electrostatic bonding in a vacuum with the surface of dark etch chamber insulation blocking wall on every side behind the device wash clean of bonding again, this procedure has been finished the sealing of vacuum capacitance cavity.
The present invention adopts the structure of two silicon and two sheet glass bondings, because the method that adopts sandwich construction static bonding process sealed capacitor cavity to make the capacitance type minitype pressure transducer has been avoided bonding this difficult problem of capacitance cavity sealing effectively.The way that utilization separates electric capacity seal chamber and electrode chamber can satisfy the sealing of electric capacity seal chamber, the sealing problem in the time of can avoiding the capacitance cavity electrode to draw again (the lower chamber blow-by of capacitance cavity and main silicon chip is used to pass through actuating medium).The sandwich construction static bonding process separates the capacitance cavity and the electric capacity annular seal space of capacitance pressure transducer,, and the capacitance cavity electrode is drawn by the groove that is made on the main silicon chip lower surface (bonding face).
Compare with existing capacitive pressure transducer; outstanding effect of the present invention is embodied in and adopts multilayer structure bonded technical scheme sealed capacitor cavity; solved the sealing difficult problem of the capacitance cavity that perplexs this area for a long time effectively; in addition because this capacitance type minitype pressure transducer has good capacitance cavity sealing characteristics; thereby have very stable operating characteristic, low, the Stability Analysis of Structures of power consumption, bear that overvoltage capabilities is strong, the linearity and highly sensitive, measurement stability good, good performance index such as desirable zero-pressure characteristic, overload protection are arranged.
Simultaneously, the silicon materials processing technology of the pressure transducer of the electrostatic bonding and sealed capacitor cavity that the present invention introduced has versatility, is easy to large-scale production, and cost of manufacture is low, simple in structure, size is little.If adopting the large scale structure then to can be used for high vacuum measures.
Description of drawings
Fig. 1 is the STRUCTURE DECOMPOSITION synoptic diagram of multilayer structure bonded seal protective capacity pressure sensor.
Fig. 2 is the installation diagram of multilayer structure bonded seal protective capacity pressure sensor.
Fig. 3 is the A-A face view of Fig. 2.
Fig. 4 is the C-C face view of Fig. 2.
Fig. 5 is the B-B face view of Fig. 2.
Fig. 6 (a)～(t) is the process for making synoptic diagram of multilayer structure bonded seal protective capacity pressure sensor.
Embodiment
Following examples will the present invention is further illustrated in conjunction with the accompanying drawings.
Shown in Fig. 1～5, multilayer structure bonded seal protective capacity pressure sensor comprises main silicon chip 18, the glass substrate 19 that is provided with capacitance cavity electrode 16 with pressure experience film 10, the seal glass 1 that is used for sealed capacitor cavity and protection silicon chip 4.Square silicon diaphragm or circular silicon diaphragm 11 utilize P by P type doped silicon semiconductor material
+Lithographic technique or PN junction chemical etching technology form diaphragm or SOI (silicon on insulator) silicon wafer to manufacture.Specifically can be described below, one deck be arranged by P at main silicon chip 18 lower surfaces
+The diaphragm 11 that lithographic technique or PN junction chemical etching technology or SOI (silicon on insulator) silicon wafer to manufacture forms, just on this one deck, it is the part of silicon diaphragm 11 to pressure experience diaphragm 10.Pressure experience diaphragm 10 on the main silicon chip 18 is surrounded by an insulation blocking wall 9.On main silicon chip 18, also be provided with the open ports 20 of silicon diaphragm electrode 7 and the open ports 21 of capacitance cavity electrode 16.Separated by insulation blocking wall 9 between pressure experience diaphragm 10 and the open ports 20,21.Capacitance cavity 14 is made by photoetching, corrosion at the lower surface of main silicon chip 18.The upper surface of glass substrate 19 is a polished surface 15, and capacitance cavity electrode 16 is arranged on the polished surface 15, and capacitance cavity electrode 16 is drawn from the groove 27 that is made on main silicon chip 18 lower surfaces (bonding face) 13 when main silicon chip 18 and glass substrate 19 bondings, does not contact with main silicon chip 18.Capacitance cavity electrode 16 is drawn by capacitance cavity electrode outlet line 8 through open ports 21 from bonding wire point 17.Behind the lower surface 13 of main silicon chip 18 and glass substrate upper surface 15 bondings,, be joined together to form silicon diaphragm electrode 7 with silicon diaphragm 11 by sputtering at metal sputtering in the open ports 20 on silicon diaphragm 11.The extension line of silicon diaphragm electrode 7 and capacitance cavity electrode outlet line 8 form two extraction electrodes of electric capacity.Behind upper surface 6 electrostatic bondings of the lower surface area 2 of seal glass 1 and protection silicon chip 4, again with the remainder 3 of the lower surface of seal glass 1 and the surface electrostatic bonding of the insulation blocking wall 9 of main silicon chip 18, to form electric capacity seal chamber 23.Actuating medium enters capacitance cavity (and main silicon chip lower chamber) 14 by groove 12,26,27, acts on the pressure experience film 10.
Referring to Fig. 2～5, can find out the capacitance cavity electrode 16 of sensor and silicon diaphragm electrode 7 be made on the glass substrate 19 respectively and main silicon chip 18 on, run into capacitance cavity electrode 16 when the insulation course 25 of sputter on capacitance cavity electrode 16 is used to prevent silicon diaphragm 11 distortion.Capacitance cavity electrode 16 extends through groove 27 from capacitance cavity 14 and draws the extension line 8 of capacitance cavity electrode by open ports 21, and groove 26,27 is used to pass through actuating medium.Silicon diaphragm electrode 7 is made in the P of open ports 20 belows by splash-proofing sputtering metal
+On the diaphragm.Again with the lower surface (sealing bonding surface) 3 and the upper surface bonding of carrying out the insulation blocking wall 9 that forms after the deep etch of seal glass 1, form electric capacity seal chamber 23 behind upper surface 6 electrostatic bondings of the lower surface area 2 of seal glass 1 and protection silicon chip 4.The structural design of sensor will consider that the working pressure range of sensor and the maximum pressure that can bear will be made corresponding change according to the physical dimension of this condition pressure sensor under certain operational temperature conditions.The size of pressure experience film 10 is decided according to the sensor stressing conditions.Obviously, insulation blocking wall and framework are enough thick, and be enough firm.The advantage of this structural design is that sensor can bear the temperature variation in manufacturing, installation, measuring process, particularly relatively can utilize this sensor to measure under the rugged environment, by electronic instrument capacitance variations or change in voltage are monitored, configuration transmitting device and electronic instrument can carry out telemeasurement.(its area is that a * b), the vacuum chamber on capacitance cavity electrode 16 and the silicon diaphragm (electric capacity seal chamber) 23 constitutes with seal glass 1, and its electric capacity is by silicon diaphragm 11 referring to the capacitor of Fig. 1
Wherein, dxdy is little cell area of silicon diaphragm; D is the distance between silicon diaphragm and glass substrate; ε
0Be specific inductive capacity; ε
gSpecific inductive capacity for electrode dielectric layer; d
MinThickness for the insulation course 25 above the capacitance cavity electrode 16.
Because d is the degree of depth that forms by etch techniques, i.e. d-d
MinBe the distance of glass substrate insulation course top to silicon diaphragm.Because silicon diaphragm 11 is to utilize P
+Lithographic technique or PN junction are put chemical lithographic technique or the formation of SOI (silicon on insulator) silicon wafer to manufacture, so the thickness h of silicon diaphragm depends on P
+Layer or the thickness of PN junction or the thickness of SOI (silicon on insulator) silicon chip, this thickness can accurately be controlled.Vacuum-sealed cavity (being the electric capacity seal chamber) 23 be positioned at silicon diaphragm 11 directly over, be insulated the capacitance cavity electrodes 16 that layer 25 covers, i.e. dxdy in the formula is in working chamber (being capacitance cavity) 14 and be made in above the glass electrode (being the capacitance cavity electrode) 16.Therefore, silicon diaphragm 11 is subjected to working chamber (capacitance cavity) 14 medium to do the time spent, and capacitance just changes.
Fig. 6 (a)～(t) provides the processing technology and the installation process synoptic diagram of the pressure transducer of electrostatic bonding and sealed capacitor cavity, and Fig. 6 (l), (n) have provided the relative position of capacitance cavity electrode bonding wire point 17 and silicon diaphragm electrode 7.Be insulation course 31 above the capacitance cavity electrode 16 among Fig. 6 (i), the part bonding wire point 17 of capacitance cavity electrode 16 passes under the insulation blocking wall 9 among Fig. 6 (l), but does not contact with silicon diaphragm 11.Because silicon diaphragm electrode 7 is to sputter on the extension of pressure experience film 10, so 7 at silicon diaphragm electrode is connected with pressure experience film 10, this electrode utilizes sputter that metal is made in P
+On the film.Seal glass lower surface 2 earlier with protection silicon chip 4 bondings, and then, form vacuum-sealed cavity (electric capacity seal chamber) 23 with other bonding surface part 3 and upper surface bonding of seal glass lower surface 2 with main silicon chip 18 of pressure experience film.
Protection silicon chip 4 among main silicon chip 18 in Fig. 6 (a) and Fig. 6 (p) is selected for use is the P type of twin polishing or N-type semiconductor doped silicon wafer, and the seal glass 1 among the glass substrate 19 among Fig. 6 (h) and Fig. 6 (o) is the glass of twin polishing.
The technological process of multilayer structure bonded seal protective capacity pressure sensor is as follows:
1, at first with main silicon chip 18 at No. 1 (NH
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCI: H
2O
2: H
2O=1: 2: 5) boils in the washing lotion and carry out after conventional criteria cleans, dries, main silicon chip 18 is placed on 1000 ℃ or to be higher than the thickness that is oxidizing to oxide layer 28 in 1000 ℃ the oxidation furnace be 0.5～0.6 μ m.Two-sided then resist coating, preceding baking, double-sided exposure, development, back baking, in hydrogen fluoride solution, carve the figure as shown in Fig. 6 (b) behind the deoxidation layer after, remove photoresist.
2, when concentration be that 25% or 10% TMAH solution or KOH solution are when being heated to temperature less than 90 ℃, the main silicon chip 18 that will carve figure on oxide layer is put into solution etching 3～5min, then, deoxidation layer in hydrogen fluoride solution, capacitance cavity 14 and window lose the figure of electric capacity seal chamber 23 deeply shown in Fig. 6 (c) after the etching.
3, behind the good capacitance cavity 14 of etching, will put into the diffusion furnace solid-state source diffusion after main silicon chip 18 standard cleaning, under 1125 ℃ of conditions of temperature, diffusion time 3～6h so that form the P of silicon diaphragm
+Layer is as the P among Fig. 6 (d)
+Shown in the diaphragm 11, its thickness h is relevant with diffusion time.
4, gluing 30 on seal glass 19, shown in Fig. 6 (e), photoetching development, baking back figure are shown in Fig. 6 (f).Then on the glass figure splash-proofing sputtering metal shown in Fig. 6 (g).Make metal electrode (being the capacitance cavity electrode) 16 with the method for peeling off, shown in Fig. 6 (g).
5, after the making of having finished metal electrode (being the capacitance cavity electrode) 16, need be at capacitance cavity electrode 16 last layer insulating glasses 31, see Fig. 6 (h), the purpose of insulation course is that capacitance cavity electrode 16 can not contact with silicon diaphragm 11 when silicon diaphragm is run into the vacuum chamber bottom.Insulating glass film 31 can be finished by PECVD (plasma chemistry deposition) or sputter coating, and the shape of insulating glass film 31 is finished by technology of anti-carving or lift-off technology.This procedure shown in Fig. 6 (h) also will carry out thermal cycle to the connector of glass substrate 19, capacitance cavity electrode 16, insulating glass layer to be handled, earlier connector is heated to suitable temperature, continue about 40min, make capacitance cavity electrode 16 reach top insulating glass layer on every side and deform.Then, temperature is reduced by 100～150 ℃, continue for some time,, produce suitable temperature coefficient so that glass and insulation course are lax.
6, the main silicon chip 18 that will carry out capacitor cavity is placed on (NH No. 1
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCI: H
2O
2: H
2O=1: 2: 5) carry out in the washing lotion standard cleaning, dry after, stand-by.The glass lined egative film 19 of carrying out electrode is used toluene, acetone, the ultrasonic 3～5min of anhydrous alcohol respectively, use deionized water rinsing, oven dry then.Subsequently, the capacitance cavity of in super stationary ring border, the capacitance cavity electrode on the glass lined egative film 19 16 being aimed on the main silicon chip 18 14, and the lower surface (bonding face) 13 of main silicon chip 18 and the upper surface (polished surface) 15 of glass lined egative film 19 are contacted, utilize heating (heating-up temperature is 350～600 ℃) then, add static that (to be 600～1200V) bonding technology be bonded together the lower surface 13 of main silicon chip 18 upper surface 15 with glass lined egative film 19 to voltage, shown in Fig. 6 (i), behind the about h of cooling cooling at last, remove voltage.
7, again the upper surface of main silicon chip 18 is carried out photoetching, development; deoxidation layer in hydrofluoric acid solution; the figure of deep etching is wanted in the back formation of removing photoresist; then will the device shown in Fig. 6 (j) put into concentration and be 25% or 10% be heated to temperature be 90 ℃ TMAH solution carry out deep etching (5～7h), form pressure experience film 10 and insulation blocking wall 9 at last.Fig. 6 (k) is the device after the deep erosion.
8, the situation of capacitance cavity electrode bonding wire point 17 when tunicle 24 covers behind Fig. 6 (k) expression deep etching, shown in Fig. 6 (l) is to lose operation deeply by ICP to open open ports 21 situation afterwards, and at this moment capacitance cavity electrode bonding wire point 17 will place below the open ports 21.
9, open ports 20 is the places that make the silicon diaphragm electrode among Fig. 6 (m), and the silicon diaphragm electrode 7 of the pressure transducer of electrostatic bonding and sealed capacitor cavity is by behind the mask, is made in the lower surface of open ports 20 with magnetron sputtering technique, shown in Fig. 6 (n).
10, shown in Fig. 6 (p), will protect silicon chip 4 at No. 1 (NH
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCI: H
2O
2: H
2O=1: 2: 5) boil in the washing lotion carry out standard cleaning, dry after, silicon chip 4 is placed on 1000 ℃ or to be higher than the thickness that is oxidizing to protection silicon chip layer 29 in 1000 ℃ the oxidation furnace be 0.5～0.6 μ m, shown in Fig. 6 (p).Single face resist coating, preceding baking, single face exposure, development, back baking carve figure behind the deoxidation layer in hydrogen fluoride solution then, shown in Fig. 6 (q), remove photoresist.
11, the seal glass sheet 1 of twin polishing among Fig. 6 (o) is used toluene, acetone, the ultrasonic 3～5min of anhydrous alcohol respectively,, dry back and protection silicon chip 4 bondings, shown in Fig. 6 (r) then with behind the deionized water rinsing.
12, the device shown in Fig. 6 (r) of bonding being put into concentration is that 25% or 10% TMAH solution is heated to temperature when being 90 ℃, corrodes, and the device after the corrosion is shown in Fig. 6 (s).
13, the device shown in Fig. 6 (s) is placed on toluene, acetone, the ultrasonic 3～5min of anhydrous alcohol; then with behind the deionized water rinsing; after the drying; the lower surface 3 of seal glass 1 is carried out electrostatic bonding in a vacuum with the surface 13 of dark etch chamber insulation blocking wall 9 on every side; bonding process is with processing step 6, and this procedure has been finished the sealing of vacuum capacitance cavity.
The technology of the pressure transducer of the above electrostatic bonding and sealed capacitor cavity of introducing has many advantages, and Tu Chu advantage is that cost of manufacture is low the most, and performance is good, and technological process is produced easily in batch.Because this capacitance type minitype pressure transducer has good capacitance cavity sealing characteristics, thereby have very stable operating characteristic, the power consumption low, Stability Analysis of Structures, it is strong to bear overvoltage capabilities, the linearity and highly sensitive, generally speaking, it has good performance index, the experiment proved that, its performance index can reach:
(1) temperature range of measurement environment is-150～200 ℃;
(2) pressure limit: 10
-4～10
3Psi;
(3) overvoltage protection: 200～200,000% or 500psi of full scale;
(4) can bear pressure effect up to 500psi in several h, be to measure under 300 ℃ of environment in temperature;
(5) accuracy: the accuracy of maintenance ± 1.5% in 5～10 years;
(6) sluggishness: the sluggishness that in 5～10 years, keeps full scale 1%;
(7) power supply: 3～30V, 5～15mw.
Simultaneously, that the present invention also has is simple in structure, size is little, good stability, intensity height, measurement stability are good, and desirable characteristics such as zero-pressure characteristic, overload protection and high sensitivity are arranged.The silicon materials processing technology of the pressure transducer of the electrostatic bonding and sealed capacitor cavity that the present invention introduced has versatility, is easy to large-scale production.If adopting the large scale structure then to can be used for high vacuum measures.
Claims (6)
1, multilayer structure bonded seal protective capacity pressure sensor is characterized in that being provided with
Main silicon chip, the lower surface of main silicon chip is a silicon diaphragm, establishes the pressure experience diaphragm on the silicon diaphragm, is provided with capacitor cavity at the lower surface of main silicon chip, establishes the insulation blocking wall at pressure experience diaphragm periphery, establishes open ports on the main silicon chip of pressure experience diaphragm one side;
Glass substrate, the upper surface of glass substrate are polished surface, and with the lower surface bonding of main silicon chip;
Seal glass is used for sealed capacitor cavity, and the surface bond of the insulation blocking wall on the lower surface of seal glass and the main silicon chip forms seal chamber;
The protection silicon chip, the upper surface of protection silicon chip and the lower surface bonding of seal glass;
The silicon diaphragm electrode is located on the silicon diaphragm of main silicon chip open ports, and is connected to form an extraction electrode of electric capacity by extension line;
The capacitance cavity electrode is located on the upper surface of glass substrate, and upper surface is a polished surface, and is connected to form another extraction electrode of electric capacity by extension line.
2, multilayer structure bonded seal protective capacity pressure sensor as claimed in claim 1 is characterized in that said silicon diaphragm is square or circular, is P
+Etching or PN junction chemical etching or soi wafer are made the silicon diaphragm that forms.
3, multilayer structure bonded seal protective capacity pressure sensor as claimed in claim 1 is characterized in that establishing insulation course on the capacitance cavity electrode.
4, multilayer structure bonded seal protective capacity pressure sensor as claimed in claim 1 is characterized in that establishing groove between the open ports on capacitor cavity and the main silicon chip.
5, multilayer structure bonded seal protective capacity pressure sensor as claimed in claim 1 is characterized in that the silicon diaphragm electrode is made on the silicon diaphragm of open ports below by splash-proofing sputtering metal.
6, multilayer structure bonded seal protective capacity pressure sensor manufacture method is characterized in that its step is as follows:
1), main silicon chip cleaned, dries after, oxidation in oxidation furnace, etching capacitance cavity, deoxidation layer;
2), main silicon slice placed spreads the P of formation diaphragm behind the good capacitance cavity of etching at diffusion furnace
+Layer or PN junction;
3), to do the metal electrode of producing on glass of electrode;
4), on metal electrode, make one deck insulating glass;
5), after the main silicon chip that will carry out capacitor cavity cleans, dries, stand-by;
6), will carry out electrode as the flushing of the glass sheet of glass substrate, oven dry, glass lined egative film top electrode is aimed at capacitance cavity on the main silicon chip, main silicon chip is connected with the glass sheet bonding;
7), the main silicon chip upper surface of bonding is made the insulation blocking wall of silicon diaphragm;
8), open the electrode open ports, expose electrode on glass;
9), metal is produced on the P that links to each other with the pressure experience film
+On the film;
10), will as the protection silicon chip silicon chip clean, dry after, oxidation in oxidation furnace;
11), will be as the glass sheet flushing of the twin polishing of seal glass, dry back and protection wafer bonding;
12), electrostatic bonding is carried out on the surface of seal glass lower surface behind the bonding and insulation blocking wall in a vacuum, finished the sealing of vacuum capacitance cavity.
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|---|---|---|---|
| CNB2004100783879A CN1294410C (en) | 2004-09-27 | 2004-09-27 | Multilayer structure bonded seal protective capacity pressure sensor and producing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100783879A CN1294410C (en) | 2004-09-27 | 2004-09-27 | Multilayer structure bonded seal protective capacity pressure sensor and producing method |
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| CN1587939A true CN1587939A (en) | 2005-03-02 |
| CN1294410C CN1294410C (en) | 2007-01-10 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101846562A (en) * | 2009-03-27 | 2010-09-29 | 罗伯特.博世有限公司 | Pressure sensor |
| CN102642808A (en) * | 2012-05-11 | 2012-08-22 | 厦门大学 | Preparation method of glass/silicon/glass three-layer structure material based on electrostatic bonding |
| CN106568548A (en) * | 2016-10-27 | 2017-04-19 | 北京遥测技术研究所 | Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology |
| CN111044206A (en) * | 2019-11-28 | 2020-04-21 | 北京遥测技术研究所 | MEMS capacitive air pressure sensor based on PN junction electrical isolation and anodic bonding technology |
| CN114080146A (en) * | 2021-11-02 | 2022-02-22 | 中国电子科技集团公司第三十八研究所 | Low-temperature pressureless sensor metal shell sealing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FI872049A (en) * | 1987-05-08 | 1988-11-09 | Vaisala Oy | KONDENSATORKONSTRUKTION FOER ANVAENDNING VID TRYCKGIVARE. |
| JPH1183658A (en) * | 1997-09-08 | 1999-03-26 | Omron Corp | Capacitive sensor |
| CN1156681C (en) * | 2002-05-13 | 2004-07-07 | 厦门大学 | Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process |
-
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- 2004-09-27 CN CNB2004100783879A patent/CN1294410C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101846562A (en) * | 2009-03-27 | 2010-09-29 | 罗伯特.博世有限公司 | Pressure sensor |
| CN101846562B (en) * | 2009-03-27 | 2016-05-18 | 罗伯特.博世有限公司 | Pressure sensor |
| CN102642808A (en) * | 2012-05-11 | 2012-08-22 | 厦门大学 | Preparation method of glass/silicon/glass three-layer structure material based on electrostatic bonding |
| CN102642808B (en) * | 2012-05-11 | 2014-07-09 | 厦门大学 | Preparation method of glass/silicon/glass three-layer structure material based on electrostatic bonding |
| CN106568548A (en) * | 2016-10-27 | 2017-04-19 | 北京遥测技术研究所 | Capacitance-type absolute-pressure micro-pressure gas pressure sensor based on SOI-MEMS (Silicon on Insulator-Micro-Electro-Mechanical System) technology |
| CN111044206A (en) * | 2019-11-28 | 2020-04-21 | 北京遥测技术研究所 | MEMS capacitive air pressure sensor based on PN junction electrical isolation and anodic bonding technology |
| CN114080146A (en) * | 2021-11-02 | 2022-02-22 | 中国电子科技集团公司第三十八研究所 | Low-temperature pressureless sensor metal shell sealing method |
| CN114080146B (en) * | 2021-11-02 | 2023-12-05 | 中国电子科技集团公司第三十八研究所 | Low-temperature pressureless sensor metal shell sealing method |
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| CN1294410C (en) | 2007-01-10 |
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