CN1156681C - Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process - Google Patents
Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process Download PDFInfo
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- CN1156681C CN1156681C CNB02118299XA CN02118299A CN1156681C CN 1156681 C CN1156681 C CN 1156681C CN B02118299X A CNB02118299X A CN B02118299XA CN 02118299 A CN02118299 A CN 02118299A CN 1156681 C CN1156681 C CN 1156681C
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Abstract
The present invention relates to a capacitive miniature pressure sensor and a manufacturing method thereof capacitor cavity, and the capacitive miniature pressure sensor is made of a capacitor cavity with the technology of electrostatic bonding. The present invention is provided with an upper wafer, a glass substrate, a sealing wafer and output electrodes, wherein the lower surface of the upper wafer is provided with a capacitor cavity; the upper polishing surface of the glass substrate is provided with a capacitor cavity electrode and a film electrode; the lower polishing surface is provided with a contact electrode; small penetrating holes arranged between the upper polishing surface and the lower polishing surface are respectively communicated with the capacitor cavity electrode and the contact electrode; the upper surface of the sealing wafer and the contact electrode are connected by electrostatic bonding; the output electrodes are respectively arranged on the sealing wafer and the film electrode; an output electrode of the sensor on the film electrode penetrates through an opening of the upper wafer. Due to good sealing properties of the capacitor cavity, and thus, the present invention has the advantages of stable work properties, low energy consumption, stable structure, strong bearing capability of excess voltage, and high linearity and sensitivity; the method of the present invention effectively avoids the problem of sealing bond.
Description
Technical field
The present invention relates to a kind of pressure transducer, especially a kind of capacitance type minitype pressure transducer and manufacture method thereof that adopts the static bonding process sealed capacitor cavity to make.
Background technology
Because silicon materials have good mechanical property,, the means of making sensor of silicon materials have just been arranged along with the maturation of semiconductor technology.What at first, study, make is silicon piezoresistance type pressure sensor.Silicon piezoresistance type pressure sensor has that size is little, structure and characteristics such as manufacture craft is simple, sensing sensitivity height, and weak point is the poor anti jamming capability of sensor, and temperature effect is big.Size is little except that having for capacitance pressure transducer, of being made by silicon and glass bonding and silicon piezoresistance type pressure sensor, structure and manufacture craft is simple, sensing sensitivity the is high characteristics, also have advantages such as structural stability is good, intensity is high, and antijamming capability is strong, measurement stability good, temperature effect is little.And desirable zero-pressure characteristic and overload protection are arranged, and overload reaches 20000% and can not damage.The capacitance pressure transducer, of silicon and glass bonding adopts the structure of an a slice silicon and a sheet glass bonding usually, because electrode will be drawn from the electric capacity annular seal space, thereby must come extraction electrode at groove of silicon face etching with regard to the heart, seal this problem thereby produced the electric capacity annular seal space.In order to address this problem, people select for use various material to seal the groove of extraction electrode, and effect is all undesirable, and reason is to make the sealing adhesives simultaneously glass, silicon and metal all be had very difficulty of good adhesive property, or even impossible.The CN1011074D patented claim disclose a kind of can mass-producted capacitive pressure transducer, it isolates detecting element and lead-in wire and pressure medium and stress isolation is provided.This sensor is made multilayer sandwich structure.One lateral erosion of a silicon wafer is carved into a series of chambeies and forms the deflection diaphragm, and one surface is as capacitor plate.A glassy layer is in both sides metallization and porose.Glassy layer bonds to and forms several microns capacitance gap on the wafer.This assembly is clipped between 2 extra plays, and is bonding in a vacuum.4 layers of sandwich structure are made single-sensor.Initial component can be made into the response times of definite shape with the decay diaphragm, and reduces spurious signal when high frequency is imported.
Summary of the invention
The object of the present invention is to provide a kind of simple in structure, size is little, good stability, intensity height, have that desirable zero-pressure characteristic, overload protection ability are strong, the linearity and highly sensitive; can be used for-150～250 ℃ of rugged surroundings, the pressure transducer of the electrostatic bonding and sealed capacitor cavity that the technology versatility is good and manufacture craft thereof.
The present invention is provided with one and has the last silicon chip of experiencing film, silicon chip (to call the sealed silicon sheet in the following text) and a pair of output stage that an electroded glass substrate, is used for sealed capacitor cavity.The lower surface of last silicon chip is the pressure experience diaphragm.Pressure experience diaphragm periphery is established the protection wall, is establishing open ports on the silicon chip on pressure experience diaphragm one side.The lower surface of last silicon chip is established capacitor cavity.The upper and lower surface of glass substrate is polished surface, last polished surface is provided with capacitance cavity electrode and membrance electrode, following polished surface is provided with contact electrode, establish the perforation aperture up and down between the polished surface, connecting aperture is communicated with capacitance cavity electrode and contact electrode respectively, conducting film is established on the surface that connects aperture, establishes insulation course between capacitance cavity electrode and the pressure experience diaphragm.The upper surface and the contact electrode of sealing silicon chip link together by electrostatic bonding.Establish the sensor output stage respectively on sealing silicon chip and membrance electrode, the sensor output stage on the membrance electrode passes the open ports of silicon chip.
The manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity is as follows:
1, going up silicon chip cleans, dries oxidation in oxidation furnace, and etching capacitance cavity.
2, remove the lower surface oxide layer of the last silicon chip of carrying out capacitor cavity.
3,, form the P of diaphragm with the last silicon chip solid-state source diffusion of the good capacitance cavity of etching
+Layer or PN junction.
4, will seal silicon chip and clean, dry, spread, and make the surface generate diffusion layer with Ohmic contact.
5, the glass lined egative film of twin polishing is got through the hole, make capacitance cavity electrode, membrance electrode and via metalization and contact electrode again.
6, on the capacitance cavity electrode, make a layer insulating.
7, with the capacitance cavity on the silicon chip on the capacitance cavity electrode alignment of glass lined egative film, the lower surface that utilizes the static bonding process that adds static will go up silicon chip is connected with the upper surface bonding of glass lined egative film.
8, the lower surface with the glass lined egative film is connected with the upper surface electrostatic bonding of sealing silicon chip.
9, on sealing silicon chip and membrance electrode, make the output stage of sensor respectively.
The cleaning of last silicon chip can select for use silicon electricity cleaning fluid to carry out standard cleaning, and the temperature of its oxidation furnace can be not less than 800 ℃, and thickness of oxide layer should be controlled at 0.5～2 μ m.The etching of capacitance cavity adopts photoetching process, and the last silicon chip after the etching can be put into the diffusion furnace solid-state source diffusion, and the diaphragm thickness of formation is relevant with diffusion time, and general thickness is 1～8 μ m, and be 3～6h diffusion time, and the diffusion furnace temperature should be selected 1100～1250 ℃ for use.The sealing silicon chip is done two-sided dense diffusion, makes the surface have ohmic contact characteristic.Through-hole aperture on the glass substrate can be 100～800 μ m, and the metallization of through hole is finished in utilizing sputter coating fabrication techniques capacitance cavity electrode and membrance electrode process together.Play insulating effect between capacitance cavity electrode top or the purpose experiencing the lower surface plating of film or be coated with one deck glass dielectric layer are capacitance cavity electrode and diaphragm, when diaphragm was run into capacitor cavity vacuum chamber bottom, the capacitance cavity electrode can not contact with diaphragm.When adopting static bonding process, can in super stationary ring border, utilize heating (temperature is 350～600 ℃), add static that (voltage is 600～1200V) it to be bonded together.
The pressure transducer of electrostatic bonding and sealed capacitor cavity is a kind of capacitance type minitype pressure transducer, it has good capacitance cavity sealing characteristics, thereby has very stable operating characteristic, and low, Stability Analysis of Structures consumes energy, it is strong to bear overvoltage capabilities, the linearity and highly sensitive.Its performance index reach:
(1) temperature range of measurement environment is-150～250 ℃;
(2) pressure limit: 10-4～103psi;
(3) overvoltage protection: 200～200000% or 500psi of full scale;
(4) can bear pressure effect up to 500psi in several hours, be to measure under 300 ℃ of environment in temperature;
(5) accuracy: the accuracy of maintenance ± 1.5% in 5～10 years;
(6) sluggishness: the sluggishness that in 5～10 years, keeps full scale 1%;
(7) power supply: 3～30V, 5～15mw.
Secondly, the pressure sensor structure of electrostatic bonding and sealed capacitor cavity is simple, size is little, and sensor is installed the back size and is about 400 μ m * 400 μ m.Structural stability is good, the intensity height; Measurement stability is good, the performance index excellence; Desirable zero-pressure characteristic, overload protection and high sensitivity are arranged, and overload reaches 20000% and can not damage.Can be used for rugged surroundings, temperature conditions reaches-150～250 ℃.The silicon materials processing technology of the pressure transducer of electrostatic bonding and sealed capacitor cavity has versatility simultaneously, is easy to large-scale production.
The method of utilizing the static bonding process sealed capacitor cavity to make the capacitance type minitype pressure transducer has been avoided bonding this difficult problem of sealing effectively.Utilize glass punching, hole metallization and electrostatic bonding and sealed capacitor cavity technology, the capacitance cavity electrode of capacitance pressure transducer, is sealed in the vacuum chamber, the capacitance cavity electrode is then drawn by the sealing silicon chip that is sealed in the glass below.
Description of drawings
Fig. 1 is the structural representation of the pressure transducer of electrostatic bonding and sealed capacitor cavity.
Fig. 2 is the installation diagram of the pressure transducer of electrostatic bonding and sealed capacitor cavity.
Fig. 3 is the A-A cut-open view of Fig. 2.
Fig. 4 is the B-B cut-open view of Fig. 2.
Fig. 5 is the C-C cut-open view of Fig. 2.
Fig. 6 is the manufacture craft and the installation procedure synoptic diagram of the pressure transducer of electrostatic bonding and sealed capacitor cavity.
Embodiment
As shown in Figure 1, it is to have the last silicon chip 12, two of experiencing film that the pressure transducer of electrostatic bonding and sealed capacitor cavity is provided with one, and the glass substrate 14, three of electrode is arranged, and is used for the silicon chip (claim sealing silicon chip) 13 of sealed capacitor cavity.One deck is arranged by P at last silicon chip 12 lower surfaces
+The diaphragm 15 that lithographic technique or PN junction chemical etching technology form, silicon diaphragm can be square or circular, and just on this one deck, it is the part of diaphragm 15 to pressure experience diaphragm 16.Sensation diaphragm 16 on the last silicon chip 12 is surrounded by a divider wall 20.On last silicon chip 12, also be provided with an open ports 18.Separated by divider wall 20 between pressure experience diaphragm 16 and the open ports 18.Capacitor cavity 22 is made by photoetching, corrosion at the lower surface of last silicon chip 12.Glass substrate 14 has two polished surfaces 28,30, and capacitance cavity electrode 26 and membrance electrode 24 are arranged on the last polished surface 28; On the following polished surface 30 contact electrode 11 is arranged.There is one to run through the aperture 19 that upthrow face 28 and following polished surface 30 also are communicated with capacitance cavity electrode 26 and contact electrode 11 respectively on the glass substrate 14, the surface of aperture 19 is coated with conducting film, the conducting film of electrode and hole surface is formed by metal coating, and coating process will guarantee that existing good adhesive property has good electrical conductivity again.Contact electrode 11 is communicated with by metallization aperture 19 with capacitance cavity electrode 26.When upper surface 28 bondings of the lower surface 23 of last silicon chip 12 and glass substrate 14, membrance electrode 24 links together with diaphragm 15, and membrance electrode 24 places the below of open ports 18.The upper surface 10 of contact electrode 11 and sealing silicon chip 13 links together by electrostatic bonding.On sealing silicon chip 13 and membrance electrode 24, establish the sensor output stage respectively.
Fig. 2 is the installation diagram of sensor, Fig. 3 is the A-A cut-open view, Fig. 4 is the B-B cut-open view, Fig. 5 is the C-C cut-open view, can find out from Fig. 2～5, the capacitance cavity electrode 26 of sensor and membrance electrode 24 directly are made on the glass substrate 14, run into capacitance cavity electrode 26 when the insulation course 32 of sputter on capacitance cavity electrode 26 is used to prevent diaphragm 16 distortion.In order to guarantee the electrostatic bonding quality, the size of glass dielectric layer 32 is less than size a and the b (referring to Fig. 1) that experiences film 16.Capacitance cavity electrode 26 extends and covering metallization aperture 19 from capacitor cavity 22, and metallization aperture 19 is touched electrode 11 simultaneously and covers.The upper surface 10 of sealing silicon chip 13 all needs to do diffusion with lower surface, so that itself and metal have the characteristic of Ohmic contact.When upper surface 10 bondings of glass substrate 14 lower surfaces 30 and sealing silicon chip 13, contact electrode 11 is being connected with sealing silicon chip 13.The structural design of sensor will be considered under certain operational temperature conditions, the working pressure range of sensor and the maximum pressure that can bear, and according to this condition, the physical dimension of pressure transducer will make corresponding changes.The size of divider wall 20 is decided according to the sensor stressing conditions, and obviously, divider wall is enough thick, and is enough firm.The advantage of this structural design is that sensor can bear the temperature variation in manufacturing, installation, measuring process, particularly relatively can utilize this sensor to measure under the rugged environment, by electronic instrument capacitance variations or change in voltage are monitored, configuration transmitting device and electronic instrument can carry out telemeasurement.Obviously, its capacitor is made of the dielectric glass layer 32 of the vacuum chamber under diaphragm 16, capacitance cavity electrode 26 and the diaphragm 22 (capacitor cavity) with its buffer action, and its electric capacity is C=∫ ∫ ε
0D * dy/[d-d
Min(ε
g-ε
0)/ε
g], wherein dxdy is little cell area of diaphragm, d is the distance between diaphragm and substrate, ε
0Be the specific inductive capacity of vacuum, ε
gSpecific inductive capacity for glass.At the place that diaphragm and substrate are in contact with one another, d=d
MinD-d then
Min(ε
g-ε
0)/ε
g=d
Minε
0/ ε
g, C=∫ ∫ ε is arranged
gDxdy/d
Min, d is the degree of depth that forms by etch techniques, d
MinBe the thickness of the insulation course 32 above the capacitance cavity electrode 26, i.e. d-d
MinBe the distance of insulated substrate layer top to diaphragm.Because silicon diaphragm 15 is to utilize P
+Lithographic technique or PN junction are put chemical lithographic technique formation, so the thickness h of diaphragm depends on P
+The thickness of layer or PN, this thickness can accurately be controlled.Vacuum-sealed cavity (capacitor cavity) 22 be positioned at diaphragm 16 under, be insulated the capacitance cavity electrodes 26 that layer 32 covers, i.e. dxdy in the formula is in vacuum chamber and be made in above the glass substrate 14.Therefore, diaphragm 16 is stressed and does the time spent, and capacitance just changes.
Fig. 3～5 have provided the relative position of capacitance cavity electrode 26 and membrance electrode 24, are insulation courses above the capacitance cavity electrode 26, and 24 of membrance electrodes are connected with film 15.Some is embedded in electrode 24 under the divider wall 20, but does not pass divider wall 20, utilize like this bonding force just electrode 24 with experience film 16 and couple together because experience the part that film 16 is films 15.The contact electrode 11 that capacitance cavity electrode 26 on the glass substrate on the polished surface 28 passes on the following polished surface 30 of cavity 21 and metallize aperture 19 and glass substrate 14 under the divider wall 20 is communicated with, and cavity 21 is communicated with vacuum-sealed cavity capacitor cavity 22.Membrance electrode 24 is sealed under the divider wall 20, thereby keeps the vacuum state of annular seal space 22.
In addition, capacitance cavity electrode 26 is to be connected with sealing silicon chip 13 by contact electrode 11, thereby has thoroughly guaranteed the vacuum tightness of annular seal space 22, and has solved a main Sealing Technology difficult problem.Select the thickness and the thickness of insulating layer d of capacitance cavity electrode 26 meticulously
Min, utilize suitable adhesive method or thermal circulation method that the capacitance cavity electrode 26 and the surface of insulation course 32 are bonded together.
Following examples provide the manufacture craft process of the pressure transducer of electrostatic bonding and sealed capacitor cavity.
Fig. 6 (a～1) is the processing technology and the installation procedure synoptic diagram of the pressure transducer of electrostatic bonding and sealed capacitor cavity, sealing silicon chip 13 among last silicon chip 12 among Fig. 6 (a) and Fig. 6 (e) is the P type of twin polishing or N-type semiconductor doped silicon wafer, and the glass substrate 14 among Fig. 6 (d) is the glass of twin polishing; The technological process of the pressure transducer of electrostatic bonding and sealed capacitor cavity is as follows:
1, at first will go up silicon chip 12 successively at No. 1 (NH
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCl: H
2O
2: H
2O=1: 2: 5) boil in the washing lotion carry out standard cleaning, dry after, placing it in the thickness that is oxidizing to oxide layer 25 in 1000～1100 ℃ the oxidation furnace is 0.5～0.6 μ m, as Fig. 6 (a).Two-sided then resist coating, preceding baking, single face exposure, develop, the back baking, behind the figure 27, remove photoresist carving behind the deoxidation layer in the hydrogen fluoride solution shown in Fig. 6 (b).
2, when concentration be that 25% or 10% TMAH solution is heated to temperature when being 80～110 ℃, carve on the oxide layer figure on silicon chip 12 put into solution etching 3～5min, then, deoxidation layer in hydrogen fluoride solution, the figure of capacitance cavity 22 is shown in Fig. 6 (c) after the etching.
3, behind the good capacitance cavity 22 of etching, remove the following oxide layer carry out silicon chip on the capacitor cavity, will go up silicon chip 12 and put into the diffusion furnace solid-state source diffusion, under 1125 ℃ of conditions of temperature, diffusion time 3～6h so that the P of formation diaphragm 15
+Layer or PN junction, shown in Fig. 6 (d), its thickness is 1～8 μ m, it is relevant with diffusion time.
4, will seal silicon chip 13 at No. 1 (NH
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCl: H
2O
2: H
2O=1: 2: 5) boil in the washing lotion carry out standard cleaning, dry after, place it in and two-sidedly in 800～1200 ℃ the diffusion furnace all do dense diffusion, make the surface have the characteristic of Ohmic contact, as the diffusion layer 41 and 40 among Fig. 6 (e).
5, with the glass substrate 14 of twin polishing by the size that designs with laser or ultrasonic or corroding method in the hole 19 of making a call to 100～600 μ m on glass, as Fig. 6 (f).Before to plating capacitance cavity electrode 26 and diaphragm 24 on the glass substrate 14, use toluene, acetone, the ultrasonic 3～5min of anhydrous alcohol respectively, use deionized water rinsing then.Oven dry is back behind usefulness sputter coating fabrication techniques capacitance cavity electrode 26 on glass and membrance electrode 24, and then does contact electrode 11, and the metallization in hole 19 is finished in the sputter coating process.The shape of capacitance cavity electrode 26, membrance electrode 24 and contact electrode 11, size are finished by technology of anti-carving or lift-off technology.
6, after the making of having finished metal electrode, need on capacitance cavity electrode 26, plate or be coated with one deck insulating glass layer 32, see Fig. 6 (g), the purpose of insulation course is that capacitance cavity electrode 26 can not contact with diaphragm when diaphragm is run into the vacuum chamber bottom.Insulating glass layer 32 can be finished by sputter coating or deposition, and the shape of insulating glass layer 32 is finished by technology of anti-carving or lift-off technology.This procedure shown in Fig. 6 (g) also will carry out thermal cycle to the connector of glass substrate, capacitance cavity electrode 26, insulation course 32 to be handled, and earlier connector is heated to suitable temperature, continues about 40min, and capacitance cavity electrode 26 insulation course is on every side deformed.Then, temperature is reduced by 100～150 ℃, continue for some time,, produce suitable temperature coefficient so that glass is lax.
7, will carry out last silicon chip 12 double spreads of capacitor cavity, lower surface 23 exposes, develops, and removes the Pyrex layer of lower surface then with hydrofluoric acid solution.Subsequently, after two-sided the removing photoresist silicon chip 12 is placed on No. 1 (NH
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCl: H
2O
2: H
2O=1: 2: 5) standard cleaning in the washing lotion, dry after, stand-by.
8, will carry out the glass substrate 14 of electrode, use toluene, acetone, the ultrasonic 3～5min of anhydrous alcohol respectively, use deionized water rinsing, oven dry then.Subsequently, in super stationary ring border, the capacitance cavity electrode on the glass substrate 14 26 aimed at the capacitance cavity 22 on the silicon chip 12, and the lower surface 23 of silicon chip 12 and the upper surface 28 of glass substrate 14 are contacted, utilize heating (heating-up temperature is 350～600 ℃) then, add static that (voltage is 600～1200V) the bonding technology lower surface 23 that will go up silicon chip 12 and the upper surface 28 of glass substrate 14 is bonded together the about 1h of cooling cooling at last.
9, will seal silicon chip 13 and be placed on (NH No. 1
4OH: H
2O
2: H
2O=1: 2: 5), No. 2 (HCl: H
2O
2: H
2O=1: 2: 5) standard cleaning in the washing lotion, dry after, the lower surface 30 of the upper surface 10 of sealing silicon chip 13 and glass substrate 14 is carried out electrostatic bonding in a vacuum, bonding process is with processing step 8, this procedure has also been finished the connection of electrode 26 with silicon chip 13.
10, to last silicon chip 12 upper surfaces carry out photoetching, development, deoxidation layer, the back of removing photoresist form the figure of wanting deep etching in hydrofluoric acid solution, then the device shown in Fig. 6 (i) of electrostatic bonding is put into concentration and is 25% or 10% be heated to temperature be 90 ℃ TMAH solution carry out deep etching (5～7h), form diaphragm 16 and wall 20 at last.Fig. 6 (j) is the device after the deep erosion.
11, membrane electrode 24 is connected with film 16 in the electrostatic bonding process.Capacitance cavity electrode 26 is connected by metallization aperture 19 and electrode 11, is connected with sealing silicon chip 13 surface doping diffusingsurfaces 10 again in the electrostatic bonding process.The following doping surfaces 33 of sealing silicon chip 13 is electrodes of electric capacity.
12, the situation of Fig. 6 (k) expression deep etching rear electrode 24 when tunicle 35 covers, shown in Fig. 6 (1) is to open window 18 situation afterwards by cutting action, at this moment electrode 24 will place below the opening 18.
13, the membrance electrode 24 that has of the pressure transducer of electrostatic bonding and sealed capacitor cavity is drawn by the lower surface 33 of sealing silicon chip 13.
Claims (8)
1, the pressure transducer of electrostatic bonding and sealed capacitor cavity is characterized in that being provided with one and has the last silicon chip of experiencing film, silicon chip and a pair of output stage that an electroded glass substrate, is used for sealed capacitor cavity; The lower surface of last silicon chip is the pressure experience diaphragm, and pressure experience diaphragm periphery is established the protection wall, is establishing open ports on the silicon chip on pressure experience diaphragm one side, and the lower surface of last silicon chip is established capacitor cavity; The upper and lower surface of glass substrate is polished surface, last polished surface is provided with capacitance cavity electrode and membrance electrode, following polished surface is provided with contact electrode, establish the perforation aperture up and down between the polished surface, connecting aperture is communicated with capacitance cavity electrode and contact electrode respectively, conducting film is established on the surface that connects aperture, establishes insulation course between capacitance cavity electrode and the pressure experience diaphragm; The upper surface and the contact electrode of sealing silicon chip link together by electrostatic bonding; Establish the sensor output stage respectively on sealing silicon chip and membrance electrode, the sensor output stage on the membrance electrode passes the open ports of silicon chip.
2, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 1 is characterized in that:
1) going up silicon chip cleans, dries oxidation in oxidation furnace, and etching capacitance cavity;
2) the lower surface oxide layer of the last silicon chip of capacitor cavity is carried out in removal;
3), form the P of diaphragm with the last silicon chip solid-state source diffusion of the good capacitance cavity of etching
+Layer or PN junction;
4) will seal silicon chip and clean, dry, spread, and make the surface generate diffusion layer with Ohmic contact;
5) the glass lined egative film of twin polishing is got through the hole, make capacitance cavity electrode, membrance electrode and via metalization and contact electrode again;
6) on the capacitance cavity electrode, make a layer insulating;
7) with the capacitance cavity on the silicon chip on the capacitance cavity electrode alignment of glass lined egative film, the lower surface that utilizes the static bonding process that adds static will go up silicon chip is connected with the upper surface bonding of glass lined egative film;
8) lower surface with the glass lined egative film is connected with the upper surface electrostatic bonding of sealing silicon chip;
9) sealing the output stage of making sensor on silicon chip and the membrance electrode respectively.
3, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 2 is characterized in that the temperature of oxidation furnace is not less than 800 ℃, and thickness of oxide layer is 0.5～2 μ m.
4, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 2, the etching that it is characterized in that capacitance cavity adopts photoetching process, last silicon chip after the etching is put into the diffusion furnace solid-state source diffusion, thickness is 1～8 μ m, be 3～6h diffusion time, and the diffusion furnace temperature is selected 1100～1250 ℃ for use.
5, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 2 is characterized in that sealing silicon chip and does two-sided dense diffusion, makes the surface have ohmic contact characteristic.
6, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 2, it is characterized in that the through-hole aperture on the glass substrate is 100～800 μ m, the metallization of through hole is finished in utilizing sputter coating fabrication techniques capacitance cavity electrode and membrance electrode process together.
7, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 2 is characterized in that in the capacitance cavity electrode top or experiences the lower surface plating of film or be coated with one deck glass dielectric layer.
8, the manufacture method of the pressure transducer of electrostatic bonding and sealed capacitor cavity as claimed in claim 2, when it is characterized in that adopting static bonding process, heat in super stationary ring border, add static, temperature is 350～600 ℃, voltage is 600～1200V, and it is bonded together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02118299XA CN1156681C (en) | 2002-05-13 | 2002-05-13 | Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB02118299XA CN1156681C (en) | 2002-05-13 | 2002-05-13 | Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process |
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| Publication Number | Publication Date |
|---|---|
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| CN1156681C true CN1156681C (en) | 2004-07-07 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100358094C (en) * | 2004-09-10 | 2007-12-26 | 北京工业大学 | Static bonding process with suspending movable sensitive structure |
| CN1294410C (en) * | 2004-09-27 | 2007-01-10 | 厦门大学 | Multilayer structure bonded seal protective capacity pressure sensor and producing method |
| CN100439890C (en) * | 2005-08-25 | 2008-12-03 | 李韫言 | Capacitor type pressure sensor for single chip single crystal silicon micromechanical processing |
| JP4215076B2 (en) * | 2006-07-10 | 2009-01-28 | ヤマハ株式会社 | Condenser microphone and manufacturing method thereof |
| CN101907636A (en) * | 2010-06-22 | 2010-12-08 | 沈阳仪表科学研究院 | Simultaneous electrostatic sealing-in method of layered structure |
| CN105890827B (en) * | 2016-01-18 | 2019-05-21 | 广东合微集成电路技术有限公司 | A kind of capacitance pressure transducer, and its manufacturing method |
| CN108168580B (en) * | 2017-12-21 | 2020-05-08 | 中国科学院上海微系统与信息技术研究所 | Anti-static structure for silicon-based MEMS capacitive sensor |
| CN109141728A (en) * | 2018-07-18 | 2019-01-04 | 江苏大学 | Fixed capacitive pressure transducer and production method among a kind of pressure sensitive film |
| CN109238518B (en) * | 2018-09-17 | 2021-11-05 | 胡耿 | Micro-polar distance capacitance type force-sensitive sensor and manufacturing method thereof |
| CN111141443A (en) * | 2019-12-26 | 2020-05-12 | 兰州空间技术物理研究所 | Capacitance film vacuum gauge based on MEMS technology |
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