CN100358094C - Static bonding process with suspending movable sensitive structure - Google Patents
Static bonding process with suspending movable sensitive structure Download PDFInfo
- Publication number
- CN100358094C CN100358094C CNB2004100743439A CN200410074343A CN100358094C CN 100358094 C CN100358094 C CN 100358094C CN B2004100743439 A CNB2004100743439 A CN B2004100743439A CN 200410074343 A CN200410074343 A CN 200410074343A CN 100358094 C CN100358094 C CN 100358094C
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- China
- Prior art keywords
- glass
- silicon chip
- metal electrode
- sensitive structure
- suspending
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000003068 static effect Effects 0.000 title claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000004377 microelectronic Methods 0.000 claims description 8
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 7
- 239000005297 pyrex Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000006378 damage Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000002153 concerted effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
The present invention provides an electrostatic bond process with a suspending movable sensitive structure, which relates to the technical field of semiconductor electrostatic bond. An insulation layer is deposited on corresponding glass of a movable structure in the prior art, which solves the problem of adhesion between the movable structure and a glass substrate, but can not eliminate the damage action of electrostatic force on the movable structure. Glass with a metal electrode is arranged on a thermostatic platform and the side with the metal electrode faces up. A cleaned silicon chip is arranged on the glass; the suspending movable sensitive structure on the silicon chip is aligned up and down with the metal electrode on the glass; the silicon chip and the metal electrode on the glass are connected to the same positive pole and the electric potential of the silicon chip and the metal electrode on the glass is the equal; the under surface of the glass is connected to a negative pole; under a static environment, except the suspending movable sensitive structure portion, the rest of the silicon chip is bonded together with the glass. The present invention shields the action of electrostatic attraction force on the movable structure, solves the problem of the damage of electrostatic force to the suspending movable microstructure portion with no need of bonding, and increases the rate of finished products.
Description
Technical field
The present invention relates to semiconductor electrostatic bonding techniques field, particularly with the electrostatic bonding manufacture method of suspending movable sensitive structure.Be widely used in having the electrostatic bonding of the silicon micro mechanical device of suspending movable micro-structural.
Background technology
Since the 1980s, along with the tremendous development of semiconductor process techniques, the means of microelectronic mechanical devices have appearred making of silicon materials.People organically combine micromechanics and microelectronic element, constitute the system with specific function, have started this subject of microelectromechanical systems (being called for short MEMS).Wherein the method for silicon-glass electrostatic bonding is adopted in the encapsulation of silicon microelectronic mechanical devices usually.The electrostatic bonding technology can be bonded together glass and silicon under lower temperature, and need not any binding agent, and bonded interface has good air-tightness and long-term stability.But in the process of electrostatic bonding, electrostatic force also usually acts on does not need the movable sensitive structure of bonding part, and causes the excessive deformation of sensitive structure, causes the inefficacy even the destruction of device.Make a concerted effort to cause that at the first phase in 1997 " instrumental technique and transducer "-electrostatic bond silicon microstructure distorts proposes at corresponding deposit on glass one layer insulating of movable structure in the research of a literary composition, reduce " adhesion " problem of movable structure and glass substrate, yet can't eliminate the destruction of electrostatic force movable structure.
Summary of the invention
The objective of the invention is provides a kind of silicon-glass bonding quality that both can guarantee in order thoroughly to solve the shortcoming in the above-mentioned static bonding process that has a suspending movable sensitive structure, again the static bonding process method that can not damage the suspending movable micro mechanism.Can be widely used in the encapsulation of the various devices that have a suspending movable sensitive structure.
Technical solution of the present invention is: adopt silicon-glass electrostatic bonding technology on glass substrate, realization has the encapsulation of the silicon micro mechanical device of suspending movable sensitive structure.
Have the static bonding process of suspending movable sensitive structure, it is characterized in that, form by following steps:
The conventional wet-oxygen oxidation technology of 1 usefulness is carried out two-sided oxidation to the twin polishing silicon chip, forms the earth silicon mask protective layer, will erode away suspending movable sensitive structure with the Silicon Crystal Anisotropic Etching agent through the silicon chip of oxidation processes;
2 remove the above-mentioned silicon dioxide layer that erodes away the silicon chip of structure, clean up with the conventional cleaning of microelectronics;
3 at employing sputter coating fabrication techniques metal electrode on glass;
4 place the above-mentioned glass of making that has metal electrode on the Thermostatic platform face, and the one side that metal electrode is arranged is last; Place above-mentioned cleaned silicon chip on glass again; Suspending movable sensitive structure on the silicon chip is aimed at up and down with metal electrode on glass; Silicon chip and metal electrode on glass connect same positive pole, both current potentials equate, the lower surface of glass connects negative pole, heat in super stationary ring border with the microelectronics common process, making alive utilizes silicon-glass electrostatic bonding technology that remainder and the glass except that the suspending movable sensitive structure part on the silicon chip is bonded together.
In the above-mentioned first step, anisotropic etchant can adopt ethylenediamine, and catechol and water system (EPW system) also can adopt potassium hydroxide (KOH), reach the purpose that erodes away suspending movable sensitive structure.
In above-mentioned the 3rd step, glass is preferably selected pyrex (Pyrex) #7740 glass for use, because the thermal coefficient of expansion of Pyrex#7740 glass is the most close with silicon.
Critical process of the present invention is that suspending movable micro-structural part has equipotential with following corresponding metal electrode on glass, shielded the effect of electrostatic attraction widely to movable structure, solved in the electrostatic bonding effectively, electrostatic force suspending movable micro-structural this difficult problem of destruction partly to not needing bonding, improved the rate of finished products of the electrostatic bonding that has movable sensitive structure greatly, advantage of the present invention that Here it is.
The present invention is by increasing a metal electrode with the corresponding up and down place of suspending movable sensitive structure part on the glass bonding face, guarantee movable sensitive structure and electrode equipotential during bonding, can be widely used in the various suspending movable sensitive structures that have (as cantilever beam, in the electrostatic bonding of microelectronic mechanical devices ultrathin film, mass etc.).
Embodiment
Most preferred embodiment of the present invention comprises the following steps:
1 with the thermal oxidation of twin polishing silicon chip wet oxygen, under 1100 ℃, carries out wet-oxygen oxidation, and the silicon dioxide layer of two-sided oxidation growth 1.2 μ m with above-mentioned silicon chip through oxidation processes, goes out suspending movable sensitive structure with the KOH wet etching, flying height 3 μ m;
2 remove the above-mentioned silicon dioxide layer that erodes away the silicon chip of structure, clean up with the conventional cleaning of microelectronics;
3 at Pyrex#7740 employing sputter coating on glass fabrication techniques metal electrode, thickness of glass 1mm;
4 place the above-mentioned Pyrex#7740 glass of making that has metal electrode on the Thermostatic platform face, and the one side that metal electrode is arranged is last; Place above-mentioned cleaned silicon chip on glass again; Suspending movable sensitive structure on the silicon chip is aimed at up and down with metal electrode on glass; Silicon chip and metal electrode on glass connect same positive pole, both current potentials equate, the lower surface of glass connects negative pole, in super stationary ring border, heat, 370 ℃ of temperature, making alive 900V utilize silicon-glass electrostatic bonding technology that remainder and the glass except that the suspending movable sensitive structure part on the silicon chip is bonded together.
Claims (3)
1, have the static bonding process of suspending movable sensitive structure, it is characterized in that, form by following steps:
1) with conventional wet-oxygen oxidation technology the twin polishing silicon chip is carried out two-sided oxidation, form the earth silicon mask protective layer, will erode away suspending movable sensitive structure with the Silicon Crystal Anisotropic Etching agent through the silicon chip of oxidation processes;
2) remove the above-mentioned silicon dioxide layer that erodes away the silicon chip of suspending movable sensitive structure, clean up with the conventional cleaning of microelectronics;
3) at employing sputter coating fabrication techniques metal electrode on glass;
4) the above-mentioned glass of making that has metal electrode is placed on the Thermostatic platform face, the one side that metal electrode is arranged is last; Place above-mentioned cleaned silicon chip on glass again; Suspending movable sensitive structure on the silicon chip is aimed at up and down with metal electrode on glass; Silicon chip and metal electrode on glass connect same positive pole, both current potentials equate that the lower surface of glass connects negative pole, heats in super stationary ring border, making alive utilizes silicon-glass electrostatic bonding technology that remainder and the glass except that the suspending movable sensitive structure part on the silicon chip is bonded together.
2, anisotropic etchant adopts ethylenediamine, catechol and water system or uses potassium hydroxide the static bonding process that has suspending movable sensitive structure according to claim 1, above-mentioned steps 1).
3, to select pyrex for use be Pyrex#7740 glass to glass the static bonding process that has suspending movable sensitive structure according to claim 1, above-mentioned steps 3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100743439A CN100358094C (en) | 2004-09-10 | 2004-09-10 | Static bonding process with suspending movable sensitive structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100743439A CN100358094C (en) | 2004-09-10 | 2004-09-10 | Static bonding process with suspending movable sensitive structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588618A CN1588618A (en) | 2005-03-02 |
| CN100358094C true CN100358094C (en) | 2007-12-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100743439A Expired - Fee Related CN100358094C (en) | 2004-09-10 | 2004-09-10 | Static bonding process with suspending movable sensitive structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN100358094C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100372088C (en) * | 2006-02-27 | 2008-02-27 | 哈尔滨工业大学 | Automatic bonding method of MEMS high temp pressure sensor |
| US20120146452A1 (en) * | 2010-12-10 | 2012-06-14 | Miradia, Inc. | Microelectromechanical system device and semi-manufacture and manufacturing method thereof |
| CN109037049B (en) * | 2018-07-30 | 2020-09-15 | 中国电子科技集团公司第四十九研究所 | Method for completely removing metal layer between wafer-level SOI material and glass electrostatic bonding surface |
| CN113161247B (en) * | 2021-04-30 | 2022-01-28 | 中国建筑材料科学研究总院有限公司 | Electrostatic bonding method and apparatus and photocathode prepared using the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08279444A (en) * | 1995-04-07 | 1996-10-22 | Nec Corp | Microstructure and manufacturing method thereof |
| CN1277142A (en) * | 2000-07-21 | 2000-12-20 | 中国科学院上海冶金研究所 | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate |
| CN1379228A (en) * | 2002-05-13 | 2002-11-13 | 厦门大学 | Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process |
| CN1431699A (en) * | 2003-02-28 | 2003-07-23 | 北京大学 | Integrating method for silicon integrated MEMS parts |
-
2004
- 2004-09-10 CN CNB2004100743439A patent/CN100358094C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08279444A (en) * | 1995-04-07 | 1996-10-22 | Nec Corp | Microstructure and manufacturing method thereof |
| CN1277142A (en) * | 2000-07-21 | 2000-12-20 | 中国科学院上海冶金研究所 | Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate |
| CN1379228A (en) * | 2002-05-13 | 2002-11-13 | 厦门大学 | Pressure sensor with electrostatic bonding and sealed capacitor cavity and its preparing process |
| CN1431699A (en) * | 2003-02-28 | 2003-07-23 | 北京大学 | Integrating method for silicon integrated MEMS parts |
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| Publication number | Publication date |
|---|---|
| CN1588618A (en) | 2005-03-02 |
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