CN1585121A - Packaging structure with projected zone carrying crystals, crystals carried substrate and crystals carried assembly - Google Patents
Packaging structure with projected zone carrying crystals, crystals carried substrate and crystals carried assembly Download PDFInfo
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- CN1585121A CN1585121A CN 03153763 CN03153763A CN1585121A CN 1585121 A CN1585121 A CN 1585121A CN 03153763 CN03153763 CN 03153763 CN 03153763 A CN03153763 A CN 03153763A CN 1585121 A CN1585121 A CN 1585121A
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- projection
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- projections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
The sealing structure is composed of the wafer, the base plate, several first cams and one second cam. The first can is one of the first welding pad which is divided into elctrical and mechanical connecting crystal, the second cam is the second welding pad of electrical and mechanical connecting crystal. The size of the second cam is greater than the first cam, thus the structure possesses excellent electronic effect and heat elimination effect.
Description
Technical field
The present invention relates in the semiconductor device of a kind of electricity basic electrical component field composite packing structure, cover brilliant substrate and cover brilliant assembly, particularly relate to a kind of composite packing structure with zone projection, cover brilliant substrate and cover brilliant assembly.
Background technology
Chip bonding technology (Flip Chip Interconnect Technology) mainly is to utilize face array (area array) (array is an array, below all be called array) arrangement mode, (bonding pad) is disposed at wafer (die with a plurality of weld pads, wafer is a chip, below all be called wafer) active surface (active surface), and on each weld pad, form projection (bump), and with wafer turn-over (flip) afterwards, electrically (electrically) and mechanicalness (mechanically) are connected to the surperficial pairing contact mat (contact pad) of substrate (substrate) or printed circuit board (PCB) (PCB) respectively to utilize projection on the weld pad of wafer.In addition, the chip bonding technology also can be pre-formed the contact mat of projection in the surface of substrate or printed circuit board (PCB), then utilizes weld pad on the active surface of wafer electrically to reach mechanicalness respectively again and is connected to its pairing projection.It should be noted that, because the chip bonding technology can be applicable to the chip package structure of high pin number (High Pin Count), and have the package area of dwindling and shorten multiple advantages such as signal transmission path, so the chip bonding technology has been widely used in the wafer package field at present, the chip package structure of at present common application chip bonding technology, it comprises and covers geode lattice array (Flip Chip Ball Grid Array, FC/BGA) and cover brilliant pin lattice array (Flip Chip Pin Grid Array, the chip package structure of kenel such as FC/PGA).
Please consult Figure 1 and Figure 2 simultaneously, wherein Fig. 1 is the schematic top plan view that has known a kind of composite packing structure now, and Fig. 2 is the generalized section of I-I section among Fig. 1.This existing composite packing structure 100 comprises substrate (substrate) 110, wafer 130, a plurality of projection 140.As shown in Figure 2, substrate 110 has a substrate surface 112 and a plurality of contact mat (contact pad) 114, and these contact mats 114 are the substrate surfaces 112 that are disposed at substrate 110.In addition, wafer 130 has an active surface (active surface) 132, wherein the active surface 132 of wafer 130 is that general reference wafer 130 has the one side of moving assembly (active device) (not shown) of king, and wafer 130 has more a plurality of weld pads 134, it is disposed at the active surface 132 of wafer 130, in order to export as the signal of wafer 130 into media, wherein the position of these contact mats 114 is the positions that correspond respectively to these weld pads 134.In addition, 140 difference of these projections electrically reach mechanicalness and connect one of these weld pads 134 to one of its pairing these contact mats 114.At last, primer (underfill) the 150th is filled in substrate 110, wafer 130 and 140 spaces that surround jointly of these projections, in order to the part of protecting contact mat 114, weld pad 134 and these projections 140 to be exposed.
With regard to existing known chip bonding technology, wafer all are the corresponding contact mats that are electrically connected to substrate via the spherical projection of same size as signal (signal), power supply (power) with the weld pad of ground connection functions such as (ground).It should be noted that because its electric usefulness of projection and the heat dissipation of same size are all fixing,, set about improving from the projection of same size being difficult to if will promote the electrical property efficiency and the heat dissipation of wafer after encapsulation.Therefore, if the designer will significantly promote electric usefulness and the heat dissipation of wafer after encapsulation, certainly will set about improving from alternate manner.
This shows, above-mentioned existing composite packing structure, cover brilliant substrate and cover brilliant assembly and still have many defectives, and demand urgently further being improved.In order to solve existing composite packing structure, cover brilliant substrate and to cover the defective of brilliant assembly, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but does not see always that for a long time suitable design finished by development, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because above-mentioned existing composite packing structure, cover brilliant substrate and cover the existing defective of brilliant assembly, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge thereof, actively studied innovation, in the hope of the composite packing structure of founding a kind of new structure with zone projection, cover brilliant substrate and cover brilliant assembly, can improve general existing composite packing structure, cover brilliant substrate and cover brilliant assembly, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
Main purpose of the present invention is, overcome above-mentioned existing composite packing structure, cover brilliant substrate and cover the defective that brilliant assembly exists, and a kind of new composite packing structure with zone projection is provided, technical problem underlying to be solved be make its can according to wafer electrically on various specific (special) requirements, projection is designed to shape arbitrarily in the horizontal, and can promote electric usefulness and the heat dissipation of wafer after encapsulation, be suitable for practicality more, and have the value on the industry.
Another object of the present invention is to, a kind of brilliant substrate that covers is provided, technical problem to be solved be make its can according to wafer electrically on various specific (special) requirements, projection is designed to shape arbitrarily in the horizontal, and can promote electric usefulness and the heat dissipation of wafer after encapsulation, thereby be suitable for practicality more, and have the value on the industry.
A further object of the present invention is, a kind of brilliant assembly that covers is provided, technical problem to be solved be make its can according to wafer electrically on various specific (special) requirements, projection is designed to shape arbitrarily in the horizontal, and can promote electric usefulness and the heat dissipation of wafer after encapsulation, be suitable for practicality more, and have the value on the industry.
Purpose of the present invention and to solve its technical problem underlying be to adopt following technical scheme to realize.A kind of composite packing structure according to the present invention's proposition with zone projection, it comprises: a substrate, have a first surface, a plurality of first contact mat and at least one second contact mat, wherein the area of this second contact mat is other area greater than those first contact mats; At least one wafer has an active surface, a plurality of first weld pad and at least one second weld pad, and wherein the area of this second weld pad is other area greater than those first weld pads; A plurality of first projections connect one of those first weld pads respectively to one of its pairing those first contact mats; And at least one second projection, connect this second weld pad to this second contact mat, wherein the size of this second projection is other size greater than those first projections.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
Aforesaid composite packing structure with zone projection, the size of wherein said second projection are double other sizes in those first projections.
Aforesaid composite packing structure with zone projection, wherein said those first projections are the peripheries that are positioned at this second projection.
Aforesaid composite packing structure, wherein said first weld pad with zone projection be for signal chip bonding pads, power supply chip bonding pads and ground connection chip bonding pads one of them.
Aforesaid composite packing structure, wherein said second weld pad with zone projection be for power supply chip bonding pads, ground connection chip bonding pads and special signal chip bonding pads one of them.
Aforesaid composite packing structure with zone projection, it more comprises a primer, this primer is filled in the cavity that this substrate, this wafer, those first projections and this second projection are surrounded.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.A kind ofly cover brilliant substrate according to what the present invention proposed, it comprises: a substrate, comprise a first surface, a plurality of first contact mat and at least one second contact mat, and wherein the area of this second contact mat is other area greater than those first contact mats; A plurality of first projections, connecting respectively should be to one of its pairing those first contact mat; And at least one second projection, be connected to this second contact mat, wherein the size of this second projection is other size greater than those first projections.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
Aforesaidly cover brilliant substrate, the size of wherein said second projection is double other size in those first projections.
Aforesaidly cover brilliant substrate, wherein said those first projections are the peripheries that are positioned at this second projection.
Purpose of the present invention and solve its technical problem underlying and also realize by the following technical solutions.A kind ofly cover brilliant assembly according to what the present invention proposed, it comprises: a wafer, comprise an active surface, a plurality of first weld pad and at least one second weld pad, and wherein the area of this second weld pad is other area greater than those first weld pads; A plurality of first projections are connected to one of those first weld pads respectively; And at least one second projection, be connected to this second weld pad, wherein the size of this second projection is other size greater than those first projections.
The object of the invention to solve the technical problems can also be further achieved by the following technical measures.
Aforesaidly cover brilliant assembly, the size of wherein said second projection is double other size in those first projections.
Aforesaidly cover brilliant assembly, wherein said those first projections are the peripheries that are positioned at this second projection.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of composite packing structure with zone projection, and it has a substrate, at least one wafer, a plurality of first projection (general projection) and at least one second projection (zone projection).At first, substrate has a substrate surface, a plurality of first contact mat and at least one second contact mat, and wherein the area of second contact mat is other area greater than these first contact mats.In addition, wafer has an active surface, a plurality of first weld pad and at least one second weld pad, and wherein the area of second weld pad is other area greater than these first weld pads.In addition, first projection is to connect one of these first weld pads respectively to one of its pairing these first contact mats.And second projection is to connect second weld pad to the second contact mat, and wherein the size of second projection is other size greater than these first projections.
According to preferred embodiment of the present invention, wherein the size of second projection is can be double in other size of these first projections.In addition, these first projections are the peripheries that can be positioned at second projection, wherein first weld pad for example is signal chip bonding pads, power supply chip bonding pads or ground connection chip bonding pads, and second chip bonding pads for example is power supply chip bonding pads, ground connection chip bonding pads or special signal chip bonding pads.Moreover, more a primer is filled in the space that wafer, these first projections, second projection and the substrate are surrounded.
Therefore, composite packing structure with zone projection of the present invention is by changing projection shape in the horizontal, make a plurality of projections of original same group of power supply or ground connection to integrate and become projection, integrate area before so can increase a plurality of projections relatively, thereby can increase a plurality of projections integration conductive area and area of dissipation before, and then can promote electrical property efficiency and the heat dissipation of wafer after encapsulation.
By technique scheme, the composite packing structure with zone projection of the present invention has following advantage at least:
1, the composite packing structure with zone projection of the present invention, can according to wafer electrically on various specific (special) requirements, and projection is designed to shape arbitrarily in the horizontal, so can promote the electric usefulness of wafer after encapsulation, make composite packing structure of the present invention go for the electronic product of particular electrical sexual demand.
2, the composite packing structure with zone projection of the present invention, the size of its zone projection is big (this is for general projection), increase the heat dissipation of wafer after encapsulation so can promote, make composite packing structure of the present invention go for the electronic product of high power consumption.
In sum, the composite packing structure that the present invention is special, cover brilliant substrate and cover brilliant assembly with zone projection, wherein, this composite packing structure, can according to wafer electrically on various specific (special) requirements, projection is designed to shape arbitrarily in the horizontal, and can promotes electric usefulness and the heat dissipation of wafer after encapsulation; This covers brilliant substrate, can according to wafer electrically on various specific (special) requirements, projection is designed to shape arbitrarily in the horizontal, and can promotes electric usefulness and the heat dissipation of wafer after encapsulation; This covers brilliant assembly, can according to wafer electrically on various specific (special) requirements, projection is designed to shape arbitrarily in the horizontal, and can promotes electric usefulness and the heat dissipation of wafer after encapsulation.It has above-mentioned plurality of advantages and practical value, on product structure, really belong to innovation, no matter bigger improvement is all arranged on product structure or function, more existing composite packing structure, cover brilliant substrate and cover the multinomial effect that brilliant assembly has enhancement, and have large improvement technically, and produced handy and practical effect, have the extensive value of industry, thereby being suitable for practicality more, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the schematic top plan view that has known a kind of composite packing structure now.
Fig. 2 is the generalized section of I-I section among Fig. 1.
Fig. 3 is the schematic top plan view according to the composite packing structure with zone projection of preferred embodiment of the present invention.
Fig. 4 is the generalized section of II-II section among the 3rd figure.
100: composite packing structure 110: substrate
112: substrate surface 114: contact mat
130: wafer (chip) 132: active surface
134: weld pad 140: projection
150: primer 200: composite packing structure
210: substrate 212: substrate surface
214: contact mat 216: regional contact mat
230: wafer (chip) 232: active surface
234: weld pad 236: regional weld pad
240: projection 242: zone projection
250: primer
Embodiment
Below in conjunction with accompanying drawing and preferred embodiment, the composite packing structure that foundation the present invention is proposed, cover brilliant substrate and cover its concrete structure of brilliant assembly, feature and effect thereof with zone projection, describe in detail as after.
See also Fig. 3, shown in Figure 4, wherein Fig. 3 is the schematic top plan view according to the composite packing structure with zone projection of preferred embodiment of the present invention, and Fig. 4 is the generalized section of II-II section among the 3rd figure.The composite packing structure 200 of preferred embodiment of the present invention comprises substrate 210, wafer 230 and a plurality of projection, wherein:
Those a plurality of projections comprise a plurality of first projections and one second projection, and wherein these first projections are to be general projection 240, and second projection is to be at least one zone projection 242.
This substrate 210 as shown in Figure 4, have a substrate surface 212, a plurality of contact mat 214, a plurality of regional contact mat 216, and these contact mats 214 and regional contact mat 216 all is disposed at the substrate surface 212 of substrate 210.
In addition, this wafer 230, has an active surface 232, wherein the active surface 232 of wafer 230 is one sides with driving component (not shown) of general reference wafer 230, and wafer 230 also has a plurality of weld pads 234 and a plurality of regional weld pad 236, and these weld pads 234 and these regional weld pads 236 all are disposed at the active surface 232 of wafer 230.Wherein, the position of these weld pads 234 and these regional weld pads 236 is the positions that correspond respectively to these contact mats 214 and these regional contact mats 216.
In addition, 240 difference of these projections electrically reach mechanicalness and connect one of these weld pads 234 to one of its pairing these contact mats 214, and these zone projections 242 are electrically to reach mechanicalness join domain weld pad 236 respectively to its The corresponding area contact mat 216.
See also shown in Figure 4; primer 250 is to be filled in the space that substrate 210, wafer 230, these projections 240 and these zone projections 242 are surrounded; in order to the part of protecting these projections 240 and these zone projections 242 to be exposed, and provide suitable elastic buffer between substrate 210 and the wafer 230.Therefore, the weld pad 234 of wafer 230 can be respectively via projection 240, and electrically reaching the contact mat 214 that mechanicalness is connected to substrate 210, the regional weld pad 236 of wafer 230 then can be respectively via zone projection 242, and electrically reaches the regional contact mat 216 that mechanicalness is connected to substrate 210.
Please consult shown in Figure 4 equally, these weld pads 234 are transmission mediums of the signal, power supply or the ground connection that can be used as wafer 230, so weld pad 234 is to can be signal chip bonding pads, power supply chip bonding pads or ground connection chip bonding pads, these regional weld pads 236 then can be used as the power supply of wafer 230 or the transmission medium of ground connection, so regional weld pad 236 is to can be power supply chip bonding pads or ground connection chip bonding pads, wherein the area of these regional weld pads 236 can be greater than other area of these weld pads 234.It should be noted that if regional weld pad 236 also can be used as the transmission medium of this special signal, and is special signal chip bonding pads when having special signal must utilize bigger current lead-through area.In addition, because zone projection 242 must provide bigger current lead-through area, so the size of zone projection 242 must be greater than other size of these projections 240, and both sizes even can differ more than the twice.In addition, because the circuit layout of most wafer all accumulates in power supply or ground connection the central authorities of wafer 230, so these projection 240 major parts will be arranged in the periphery of zone projection 242.
Please continue to consult shown in Figure 4, because it is existing known shown in Figure 2 as power supply or earthy weld pad 134, its major part is the central authorities that are arranged in the active surface 132 of wafer 134 in the mode of group, so the transverse shapes of regional weld pad 236a, 236c for example is L shaped, existing in order to replace originally as the distribution of power supply or earthy weld pad, and the transverse shapes of regional weld pad 236b for example is a rectangle, equally can be existing originally as the distribution of power supply or earthy weld pad in order to replace.Therefore, the transverse shapes that the transverse shapes of zone projection 242 can corresponding region weld pad 236, and be shapes such as L type or square, or even other shape.In addition, the area of these regional contact mats 216 is also greater than other areas of these contact mats 214, and these contact mats 214 also can corresponding be positioned at the periphery of regional contact mat 216, and the transverse shapes of regional contact mat 216a, 216c for example is L shaped, and the transverse shapes of regional contact mat 216b for example is a rectangle.Based on above-mentioned, the transverse shapes of regional weld pad 236 is the transverse shapes that can be same as its The corresponding area contact mat 216, but both areas then can be different.
Please consult shown in Figure 4 equally, when regional weld pad 236 is during for power supply weld pad or ground connection weld pad, because the area of regional weld pad 236 is bigger, and the area of its The corresponding area projection 242 and regional contact mat 216 is also relatively large, so bigger current lead-through area can be provided, so will help to promote the electrical property efficiency of wafer 230 after encapsulation.In addition,, make the thermal energy conduction area of regional contact mat 216 increase, so will help to promote the heat dissipation of wafer 230 after encapsulation because the area of regional contact mat 216 is bigger.
Yet, being familiar with this operator will be appreciated that, it is power supply weld pad or ground connection weld pad that the regional weld pad of wafer does not limit, for the special signal of the bigger current lead-through area of needs, the regional weld pad of wafer of the present invention also can be used as the weld pad of above-mentioned special signal, to meet the electrical requirement of wafer when designing.Therefore, regional weld pad is to can be power supply weld pad, ground connection weld pad or special signal weld pad.
Based on above-mentioned, the composite packing structure with zone projection of the present invention has a substrate, at least one wafer, a plurality of first projection (general projection) and at least one second projection (zone projection).Wherein second projection is to connect second weld pad to the second contact mat, and the size of second projection is other size greater than these first projections.It should be noted that because the size of second projection is other size greater than these first projections, so this composite packing structure will have preferable electric usefulness and heat dissipation.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the structure that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (12)
1, a kind of composite packing structure with zone projection is characterized in that it comprises:
One substrate has a first surface, a plurality of first contact mat and at least one second contact mat, and wherein the area of this second contact mat is other area greater than those first contact mats;
At least one wafer has an active surface, a plurality of first weld pad and at least one second weld pad, and wherein the area of this second weld pad is other area greater than those first weld pads;
A plurality of first projections connect one of those first weld pads respectively to one of its pairing those first contact mats; And
At least one second projection connects this second weld pad to this second contact mat, and wherein the size of this second projection is other size greater than those first projections.
2, the composite packing structure with zone projection according to claim 1, the size that it is characterized in that wherein said second projection are double other sizes in those first projections.
3, the composite packing structure with zone projection according to claim 1 is characterized in that wherein said those first projections are the peripheries that are positioned at this second projection.
4, the composite packing structure with zone projection according to claim 1, it is characterized in that wherein said first weld pad be for signal chip bonding pads, power supply chip bonding pads and ground connection chip bonding pads one of them.
5, the composite packing structure with zone projection according to claim 1, it is characterized in that wherein said second weld pad be for power supply chip bonding pads, ground connection chip bonding pads and special signal chip bonding pads one of them.
6, the composite packing structure with zone projection according to claim 1 is characterized in that it more comprises a primer, and this primer is filled in the cavity that this substrate, this wafer, those first projections and this second projection are surrounded.
7, a kind ofly cover brilliant substrate, it is characterized in that it comprises:
One substrate comprises a first surface, a plurality of first contact mat and at least one second contact mat, and wherein the area of this second contact mat is other area greater than those first contact mats;
A plurality of first projections, connecting respectively should be to one of its pairing those first contact mat; And
At least one second projection is connected to this second contact mat, and wherein the size of this second projection is other size greater than those first projections.
8, according to claim 7ly cover brilliant substrate, the size that it is characterized in that wherein said second projection is double other size in those first projections.
9, according to claim 7ly cover brilliant substrate, it is characterized in that wherein said those first projections are the peripheries that are positioned at this second projection.
10, a kind ofly cover brilliant assembly, it is characterized in that it comprises:
One wafer comprises an active surface, a plurality of first weld pad and at least one second weld pad, and wherein the area of this second weld pad is other area greater than those first weld pads;
A plurality of first projections are connected to one of those first weld pads respectively; And
At least one second projection is connected to this second weld pad, and wherein the size of this second projection is other size greater than those first projections.
11, according to claim 10ly cover brilliant assembly, the size that it is characterized in that wherein said second projection is double other size in those first projections.
12, according to claim 10ly cover brilliant assembly, it is characterized in that wherein said those first projections are the peripheries that are positioned at this second projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031537634A CN100416806C (en) | 2003-08-20 | 2003-08-20 | Packaging structure with projected zone carrying crystals, crystals carried substrate and crystals carried assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031537634A CN100416806C (en) | 2003-08-20 | 2003-08-20 | Packaging structure with projected zone carrying crystals, crystals carried substrate and crystals carried assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1585121A true CN1585121A (en) | 2005-02-23 |
| CN100416806C CN100416806C (en) | 2008-09-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031537634A Expired - Lifetime CN100416806C (en) | 2003-08-20 | 2003-08-20 | Packaging structure with projected zone carrying crystals, crystals carried substrate and crystals carried assembly |
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| Country | Link |
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| CN (1) | CN100416806C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9941240B2 (en) | 2013-07-03 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor chip scale package and manufacturing method thereof |
| CN110729266A (en) * | 2018-07-16 | 2020-01-24 | 台湾积体电路制造股份有限公司 | Bonding structure of package and manufacturing method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2734381B2 (en) * | 1994-10-06 | 1998-03-30 | 日本電気株式会社 | Semiconductor device mounting structure and method of manufacturing the same |
| US6191487B1 (en) * | 1998-04-23 | 2001-02-20 | Minco Technology Labs, Inc. | Semiconductor and flip chip packages and method having a back-side connection |
| JP2001313309A (en) * | 2000-04-28 | 2001-11-09 | Nippon Avionics Co Ltd | Method for mounting flip chip |
| WO2002017392A2 (en) * | 2000-08-24 | 2002-02-28 | Polymer Flip Chip Corporation | Polymer redistribution of flip chip bond pads |
| CN1221027C (en) * | 2001-05-21 | 2005-09-28 | 矽品精密工业股份有限公司 | Semiconductor package with heat sink structure |
| CN2538067Y (en) * | 2002-04-24 | 2003-02-26 | 威盛电子股份有限公司 | Crystal covered package base |
-
2003
- 2003-08-20 CN CNB031537634A patent/CN100416806C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9941240B2 (en) | 2013-07-03 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor chip scale package and manufacturing method thereof |
| TWI631679B (en) * | 2013-07-03 | 2018-08-01 | 台灣積體電路製造股份有限公司 | Surface mounting semiconductor component, chip scale semiconductor package assembly, and surface mounting method |
| CN110729266A (en) * | 2018-07-16 | 2020-01-24 | 台湾积体电路制造股份有限公司 | Bonding structure of package and manufacturing method thereof |
| CN110729266B (en) * | 2018-07-16 | 2021-06-15 | 台湾积体电路制造股份有限公司 | Bonding structure of package and manufacturing method thereof |
| US11101190B2 (en) | 2018-07-16 | 2021-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package and printed circuit board attachment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100416806C (en) | 2008-09-03 |
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