CN1577902A - Omnidirectional reflector and luminous apparatus produced thereby - Google Patents
Omnidirectional reflector and luminous apparatus produced thereby Download PDFInfo
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- CN1577902A CN1577902A CN 200310116926 CN200310116926A CN1577902A CN 1577902 A CN1577902 A CN 1577902A CN 200310116926 CN200310116926 CN 200310116926 CN 200310116926 A CN200310116926 A CN 200310116926A CN 1577902 A CN1577902 A CN 1577902A
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Abstract
The present invention discloses one kind of omnibearing reflector and the light emitter with the omnibearing reflector. The light emitter includes one primary light emitting unit to generate the primary light in the first wavelength range, one wavelength converting member connected to the light emitting unit to convert partial primary light into the secondary light with the second wavelength range, and at least one omnibearing reflector connected to the wavelength converting member to accept the secondary light and the un-converted residual primary light. The reflector is made ofomnibearing one-dimensional photon crystal and has the transparency of transmitting the secondary light through the reflector and the reflectivity of reflecting the residual primary light back to the wavelength converting member.
Description
Technical field
The present invention relates to the omnidirectional reflection and the light-emitting device by its manufacturing of a kind of omnirange 1-D photon crystal (Omnidirectional One-DimensionalPhotonic Crystal).
Background technology
Under communication and Information technology flourish, at the Related product of communication and message area also with it because of arising at the historic moment, and tend to universalness in recent years.Therefore, large-scale and miniscope as: LCD Panel and individual mobile product or the like also form a vast consumption market in response to the progress of science and technology.Because light-emitting diode (Light Emitting Diode; LED) have the little advantage of volume, and be widely used in consumption markets such as miniscope backlight module and communication.But at present because the not enough problem of brightness still fails to be widely used in markets such as large-scale backlight liquid crystal display module and flat illumination.Therefore, light-emitting diode being applied in fields such as the backlight module of giant display and flat illumination, is that research led technology field has a great problem to be overcome.
The stakeholder who knows this technical field all knows, at the white-light emitting mechanism of light-emitting diode, is with blue light or ultraviolet light (Ultraviolet; UV) after the suitable phosphor (Phosphor) of light-emitting diode chip for backlight unit collocation interacts, its luminescent spectrum (Spectrum) convergence white light is formed.
United States Patent (USP) the 5th, 813 has disclosed a light-emitting device No. 753, and it has a UV/blue light-emitting diode, a smooth penetrator, a phosphor and a visible light and penetrates (Long Wave Pass; Hereinafter to be referred as LWP) filter.Light-emitting diode is set at one to have in the groove of a reflective side walls.The light penetrator is surrounded light-emitting diode and is filled up groove.Phosphor is dispersed in the light penetrator with granular form.Visible light penetrates the front side that filter is formed on the light penetrator.
As shown in Figure 1, United States Patent (USP) the 6th, a kind of existing light-emitting device 10 that discloses in 155, No. 699 has: a body 11, that is installed in that defines a groove 12 is arranged on the light-emitting diode 13 in this groove 12, the dome-shaped encapsulated layer 14 of this light-emitting diode 13 of encapsulation, distributed bragg reflector mirror (the Distributed Bragg Reflector of this encapsulated layer 14 of encirclement; Hereinafter to be referred as DBR) minute surface 15, surrounds the wavelength converting member (Wavelength Converting Member) 16 of this DBR minute surface 15, and the lens 17 of this wavelength converting member 16 of encapsulation.
DBR minute surface 15 is the known multilayered dielectric structure in present technique field, and this multilayered dielectric structure has the variation of one-period property on dielectric constant, and demonstrates the characteristic of a frequencies of light band gap (Photonic Bandgap).This optical band gap prevents that the light of a particular frequency range from transmitting in this dielectric structure, and allows the light total reflection of this frequency range.
Wavelength converting member 16 is made by phosphor material (Phosphorescent Materials) usually, is the known wavelength Conversion medium in present technique field.This medium is used for absorbing and changes the once light (for example: an invisible light, a ultraviolet light or a blue light) with a shorter wavelength scope, becomes a secondary light (for example: visible light or white light) with a longer wavelength scope.
DBR minute surface 15 have one transmit major part once light through the penetrability (Transmittance Characteristic) of DBR minute surface 15 to wavelength converting member 16, an and reflectivity (Reflectance Characteristic) that prevents to enter encapsulated layer 14 by the secondary light that wavelength converting member 16 is produced.In use, this light-emitting diode 13 is launched an once light that passes encapsulated layer 14 and DBR minute surface 15, and this once light continue and converted to a secondary light by the phosphor material in the wavelength converting member 16.The secondary light of a part is left light-emitting device 10 via lens 17, simultaneously remaining secondary light irradiation DBR minute surface 15, and follow-uply be reflected back toward wavelength converting member 16, enter encapsulated layer 14, improve the luminous efficiency of this light-emitting device 10 thus so that prevent this secondary light by this DBR minute surface 15.
Because, this once light be converted into the amount of secondary light, be to decide according to the concentration of phosphor material in wavelength converting member 16 and quantum efficiency (Quantum Efficiency), this once a significant amount of light can't be converted, and can pass wavelength converting member 16 and this lens 17 and enter in the air, cause the luminous efficiency of light-emitting device 10 and the quality of secondary light to descend, for example: colour temperature (Color Temperature) and purity (Purity), and if once can damage environment when light is a ultraviolet light.Therefore, need improve once the efficient that light converts secondary light to, so that improve the efficient of light-emitting device 10.
DBR minute surface 15 that the front is mentioned and LWP filter are the dielectric structures with high low-refraction (Refractive Index) layer that is right.As everyone knows, existing DBR minute surface and LWP filter, for reflection or penetrate for the incident light of the angle on a large scale of the normal on a surface of dielectric structure, the effect that it presented can't satisfy the demand of the light-emitting device of tool extensive angle scattering.
United States Patent (USP) the 6th, 130 has disclosed one by the made omnidirectional reflection of an omnirange 1-D photon crystal No. 780.This omnirange 1-D photon crystal has an omnirange optical band gap, makes when an incident light frequency (or wavelength) falls into this optical band gap, but the light of any incidence angle of total reflection and polarization (Polarization).Disclosed herein omnidirectional reflection is made of the dielectric material that plural number is right high low-index layer.The difference of refractive index between this two dielectric material, enough height just can form the omnirange optical band gap.
From the above, how the light of the wide-angle that light-emitting diode or other light emitting source are launched makes full use of, the effect of borrowing and improving light source and phosphor body, so that be applied in effectively on the backlight module or flat illumination equipment of display, be the continuous direction of making great efforts of dealer of current research light-emitting diode and design backlight module.
Summary of the invention
Main purpose of the present invention is to provide a kind of omnidirectional reflection of omnirange 1-D photon crystal.
Another object of the present invention is to provide a kind of light-emitting device, to overcome the disappearance that the existing light-emitting device in front is mentioned with omnidirectional reflection of omnirange 1-D photon crystal.
The omnidirectional reflection of omnirange 1-D photon crystal comprises among the present invention:
One dielectric, tool cyclic variation and have at least one dielectric unit on dielectric constant, this dielectric unit has one first dielectric layer, one second dielectric layer and one the 3rd dielectric layer at least, these dielectric layers are different mutually on refractive index, to such an extent as to omnidirectional reflection has a reflectivity and a penetrability, this reflectivity total reflection substantially one has the once light of one first wave-length coverage, and this penetrability transmission one has the secondary light of second wave-length coverage beyond first wave-length coverage.
The light-emitting device that has the omnidirectional reflection of omnirange 1-D photon crystal among the present invention comprises:
One luminescence unit can produce the once light with one first wave-length coverage;
One wavelength converting member, be connected in luminescence unit be used for conversion portion once light become a secondary light with one second wave-length coverage; And
First omnidirectional reflection of one omnirange photonic crystal is connected in described wavelength converting member and is used to receive this secondary light, and the remaining once light of not changed by wavelength converting member.
This omnidirectional reflection is one to have periodically variable dielectric structure on dielectric constant, and has at least one dielectric unit, this dielectric unit has one first dielectric layer and one second dielectric layer at least, the refractive index of these dielectric layers is different mutually, transmit the penetrability of secondary light so that this omnidirectional reflection has one, and a total reflection substantially is with the reflectivity of the long translation building block of optical echo of residue of any incidence angle and polarization through omnidirectional reflection.
Description of drawings
Fig. 1 is the schematic diagram of existing a kind of light-emitting device;
Fig. 2 is the side-looking generalized section of light-emitting device first preferred embodiment of the present invention;
Fig. 3 is the local enlarged diagram of light-emitting device shown in Fig. 2, the figure shows the thin bilge construction of the omnidirectional reflection of two omnirange 1-D photon crystals;
Fig. 4 is the structure chart of a light belt, the figure shows the light belt structure of omnirange 1-D photon crystal;
Fig. 5 is the spectrogram of an average reflectance and penetrance, and wherein, horizontal coordinate is represented wavelength, and vertical coordinate is represented average reflectance and penetrance;
Fig. 6 is the spectrogram of an average reflectance and penetrance;
Fig. 7 is the side-looking partial cutaway schematic of light-emitting device second preferred embodiment of the present invention;
Fig. 8 is the side-looking partial cutaway schematic of light-emitting device the 3rd preferred embodiment of the present invention;
Fig. 9 is another side-looking partial cutaway schematic of light-emitting device shown in Fig. 8, the figure shows the arrangement mode that plural luminescence component is two one-dimension array;
Figure 10 is the side-looking partial cutaway schematic of light-emitting device the 4th preferred embodiment of the present invention;
Figure 11 is the side-looking partial cutaway schematic of light-emitting device the 5th preferred embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing the specific embodiment among the present invention is described in further detail.
The white-light emitting mechanism of light-emitting diode is after interacting with the suitable phosphor body of the light-emitting diode chip for backlight unit collocation of blue light or ultraviolet light, its luminescent spectrum convergence white light to be formed.Formed for example with blue light-emitting diode and the collocation of gold-tinted phosphor body, or with ultraviolet light-emitting diodes collocation RGB (RGB) phosphor body.
Yet the formed white light of method as mentioned above has shortcomings such as the control of the higher and light source colourity of colour temperature (ColorTemperature) is difficult for usually.Colour temperature is higher to be because blue light accounts for the major part of luminescent spectrum, for reducing blue light strength or promoting gold-tinted intensity partly, must improve the chance of blue light and phosphor body effect.Light source colourity then depends on the functioning efficiency of exciting light and phosphor body.When exciting light is ultraviolet light, because ultraviolet light is minimum to contribution on the light source colourity, therefore, wish to get the uniform high-brightness white-light of colour temperature and colourity, then need improve the activity ratio of ultraviolet light and phosphor body, be passed to outside the phosphor body to reduce ultraviolet light.
As shown in Figures 2 and 3, the present invention has first preferred embodiment of light-emitting device of the omnidirectional reflection of omnirange 1-D photon crystal, comprise: a luminescence unit 51, a wavelength converting member 4, one first substrate 31, one second substrate 32, first omnidirectional reflection 6 of an omnirange 1-D photon crystal, second omnidirectional reflection 8 of an omnirange 1-D photon crystal, and a metallic mirror 71.
First and second substrate 31,32 is separately positioned on the upper surface 41 and the lower surface 42 of wavelength converting member 4.In this first preferred embodiment, wavelength converting member 4 noted earlier is to utilize rotary coating (Spin Coating) to be formed on a upper surface of second substrate 32.
By these made omnidirectional reflectors 6,8 of two omnirange 1-D photon crystals, be respectively formed at a upper surface of first substrate 31 and a lower surface of second substrate 32, be used to the remaining once light that receives secondary light and do not changed by wavelength converting member 4.These omnidirectional reflections 6,8 are respectively one to have periodically variable dielectric structure on dielectric constant, and have 14 dielectric unit 61,81 respectively.These dielectric unit 61,81 have one first dielectric layer 611,811, one second dielectric layer 612,812 and one the 3rd dielectric layer 613,813 respectively.The refractive index of these dielectric layers 611,612,613,811,812,813 is different mutually, transmit the penetrability of secondary light so that these omnidirectional reflections 6,8 have one through these omnidirectional reflections 6,8, and a total reflection substantially with the residue of any incidence angle and polarization once light return the reflectivity of this wavelength converting member 4.
Each first dielectric layer 611,811, second dielectric layer 612,812 and the 3rd dielectric layer 613,813 have one first refractive index, one second refractive index and a third reflect rate.These second dielectric layers 612 of this first omnidirectional reflection 6 are arranged at respectively between the first and the 3rd dielectric layer 611,613.Second dielectric layer 812 of second omnidirectional reflection 8 is arranged at respectively between the first and the 3rd dielectric layer 811,813.And second refractive index is lower than first and the third reflect rate, and the third reflect rate is lower than first refractive index.Be applicable to that dielectric layer 611,612,613,811,812,813 of the present invention is selected from following three dielectric materials that constitute in the group: titanium dioxide (TiO
2), silicon dioxide (SiO
2), tantalum pentoxide (Ta
2O
5), aluminium oxide (Al
2O
3), magnesium oxide (MgO), zirconia (ZrO
2), magnesium fluoride (MgF
2), barium fluoride (BaF
2) and calcirm-fluoride (CaF
2).In this first preferred embodiment, these first dielectric layers 611,811, second dielectric layer 612,812 and the 3rd dielectric layer 613,813 are respectively titanium dioxide, silicon dioxide and tantalum pentoxide.
Wherein, being applicable to the method for making these dielectric layers 611,612,613,811,812,813 of the present invention, is one to be selected from electron beam evaporation plating (E-Beam Evaporation), radio frequency sputter (R.F.Sputtering), sol-gel process (Sol-Gel) or chemical vapour deposition technique (Chemical VaporDeposition; CVD) film deposition techniques.In this first preferred embodiment, above-mentioned titanium dioxide, silicon dioxide and tantalum pentoxide are to utilize the radio frequency sputtering method to form.In addition, in first preferred embodiment, the omnidirectional reflection 6 that is positioned at first substrate, 31 upper surfaces is to utilize the radio frequency sputtering method to be deposited on the upper surface of first substrate 31, also can be to be formed directly on the upper surface 41 of wavelength converting member 4.
As shown in Figure 4, expressed light belt structure by the made omnirange 1-D photon crystal of first, second and third dielectric layer 611,811,612,812,613,813.When the interstitial void (Lattice Spacing) of this photonic crystal when a is 110.0nm, photonic crystal have a frequency between 0.298 (a/c) to the omnirange optical band gap between 0.295 (a/c) (wave-length coverage is 369nm to 373nm), its frequency be equivalent to by Fig. 4 mid point 201 to the point 202.Wave number among Fig. 4 (Wave Number; Ky) and the definition of ripple polarization TE and TM, see United States Patent (USP) the 6th, 130, No. 780 specification.
As shown in Figure 5, show the formed omnidirectional reflection of above-mentioned omnirange 1-D photon crystal for from air with the average penetration rate (Transmittance) of the incident light of all incidence angles and polarization and the spectrum of reflectivity (Reflectance).Wherein, can see at wavelength between 366nm and 378nm that average reflectance is all greater than 99%, this result is consistent with the analysis of optical band gap among Fig. 4.
As shown in Figure 6, an omnirange 1-D photon crystal (TiO is shown
2/ SiO
2/ Ta
2O
5Three-some) made omnidirectional reflection 6,8 is and one by TiO
2/ SiO
2(pair) the average penetration rate of made omnidirectional reflection and the comparison diagram of reflectance spectrum.Be with two kinds of 1-D photon crystals herein, to from wavelength converting member 4 with the ultraviolet light of 0 to 90 degree incident, average and penetrate and the comparison of reflection characteristic.Wherein, can find out TiO
2/ SiO
2/ Ta
2O
5Average reflectance all greater than 99%, and TiO
2/ SiO
2/ Ta
2O
5Waveform than TiO
2/ SiO
2Waveform narrow, it is illustrated in and does not reduce under reflection of light rate TiO
2/ SiO
2/ Ta
2O
5More can pass secondary light (visible light) effectively.Therefore, no matter luminescence unit 51 is to penetrate with which kind of angle or polarization direction, all can be confined to fully in the wavelength converting member 4 repeatedly and the scattering of multi-direction ground, and can't be passed out wavelength converting member 4.
What deserves to be mentioned is, because in first preferred embodiment of the present invention, second omnidirectional reflection 8 mainly is that total reflection is in the long translation building block 4 of an optical echo of the shady face direction emission of light-emitting device, therefore, as shown in Figure 6, each dielectric unit 81 only also can be by TiO
2And SiO
2Constitute, just can reach the once requirement of light of total reflection.
As shown in Figure 2, metallic reflector 71 is formed on a lower surface of second omnidirectional reflection 8.
In traditional light-emitting device, a metallic reflector be can be formed with, light and the long translation building block of secondary light echo are used for reflecting once in the bottom of luminescence unit.But when once light was invisible light (for example UV light), this metallic reflector will sponge the once light of part, and reduced the luminous efficiency of this light-emitting device.
In first preferred embodiment, this is once only by by in the made long translation building block 4 of second omnidirectional reflection, 8 total reflection echoes of omnirange 1-D photon crystal.In addition, secondary light (white light) again can be by metal level 71 reflected back wavelength translation building blocks 4, and pass out first omnidirectional reflection 6 by wavelength converting member 4, improve the luminous efficiency of light-emitting device of the present invention thus.
As shown in Figure 7, the present invention has second preferred embodiment of light-emitting device of the omnidirectional reflection of omnirange 1-D photon crystal, identical with first preferred embodiment haply, its difference is, first omnidirectional reflection 6 is a semi-spherical shape, being used to increases the penetrance that secondary light was transmitted first omnidirectional reflection 6, and promotes the luminous efficiency of the light-emitting device of second preferred embodiment further.
As Fig. 8 and shown in Figure 9, the present invention has the 3rd preferred embodiment of light-emitting device of the omnidirectional reflection of omnirange 1-D photon crystal, identical with first preferred embodiment haply, its difference is, this light-emitting device includes two metallic reflectors 72, and wavelength converting member 4 has more two and is the side 43 that be arranged in parallel on the contrary.In addition, the Rankine-Hugoniot relations of luminescence unit 51 also is different from first preferred embodiment.
The two sides 43 of this wavelength converting member 4 are connected with upper and lower surperficial 41,42 respectively.
This luminescence unit 51 has plural luminescence component 512, and the arrangement mode that these luminescence components 512 are two one-dimension array respectively is embedded on the side 43 of wavelength converting member 4.
These metallic reflectors 72 are respectively formed at side 43, and cover luminescence component 512.
As shown in figure 10, the present invention has the 4th preferred embodiment of light-emitting device of the omnidirectional reflection of omnirange 1-D photon crystal, identical with first preferred embodiment haply, its difference is, luminescence unit 51, second omnidirectional reflection 8, metallic reflector 71 and second substrate 32 the position is set.
This luminescence unit 51 has a luminescence component 513.This assembly 513 is embedded in the wavelength converting member 4, and has a lower surface 501.In the 4th preferred embodiment, luminescence component 513 is made of the luminescent crystal that brilliant (Epitaxy) base material and of heap of stone is formed on the brilliant base material of heap of stone.Be applicable to that brilliant base material of heap of stone of the present invention is one to be selected from the of heap of stone brilliant base material of sapphire (Sapphire), zinc selenide (ZnSe), zinc oxide (ZnO) or gallium nitride (GaN).In the 4th preferred embodiment, brilliant base material of heap of stone uses sapphire.
The lower surface 42 of second omnidirectional reflection, 8 embedded these wavelength converting members 4, and have a upper surface 801 and a lower surface 802 in contrast to upper surface 801.The upper surface 801 of this second omnidirectional reflection 8 is formed on the lower surface 501 (i.e. the lower surface of brilliant base material of heap of stone) of luminescence component 513.
This metallic reflector 71 is formed on the lower surface 42 of wavelength converting member 4, and covers the lower surface 802 of second omnidirectional reflection 8.
As shown in figure 11, the present invention has the 5th preferred embodiment of light-emitting device of the omnidirectional reflection of omnirange 1-D photon crystal, and is identical with the 4th preferred embodiment haply.Its difference is that metallic reflector 71 is formed on the lower surface of second substrate 32, and covers second substrate 32.
What deserves to be mentioned is in addition, in preferred embodiment of the present invention, be the characteristic of utilizing the omnirange optical band gap of these omnidirectional reflections 6,8, make its optical band gap be positioned at the wave-length coverage that incident light source is the 370nm ultraviolet light, and cooperate the three primary colors phosphor powder to form the luminous mechanism of white light.And application of the present invention is not confined in the restrictive condition of these preferred embodiments, also can be at the luminous mechanism of different colours and cooperate the application of color science (Chromatics), design the omnidirectional reflection of the omnirange 1-D photon crystal of optical band gap with a predetermined wavelength range, make selected phosphor powder can cooperate the incident light source of this predetermined wavelength range, to form the luminous mechanism of other color.
Relatively these preferred embodiments can obtain following result:
(1), the top omnidirectional reflection of mentioning 6,8, can effectively intercept the ultraviolet light that wavelength is 370nm, and avoid this high-octane ultraviolet light directly to be delivered to the external world, reduce injury to human body caused.
(2), according to above-mentioned result (one), omnirange among the present invention reflection 6,8 can make once light (ultraviolet light) and fully effect of wavelength converting member 4 (phosphor body), so as to improving the luminosity and the stabilized light source colourity of white light.
(3), in first and second preferred embodiment because once the light of light distributes, come, therefore the distance between the adjustable wide luminescence component 511,512 by these omnidirectional reflection 8 scatterings.And after transferring the spacing of wide these luminescence components 511,512, not but still can keep the uniformity of light-emitting device light-emitting area, also therefore do not solved the overheated problem of light-emitting device.
(4), in these preferred embodiments, because once light is confined in the wavelength converting member 4 (phosphor body) fully by these omnidirectional reflections 6,8.So, even the bed thickness of wavelength converting member 4 as thin as a wafer or the density of phosphor body is not high, still can make once light and its fully act on.Improve light-emitting device luminosity of the present invention and the advantage of dwindling the light-emitting device volume so have.
In sum, the present invention has the light-emitting device of omnidirectional reflection, have reduction to injury that human body caused, the luminosity that improves white light, light source chroma stability, solve characteristics such as the overheated problem of light-emitting device and bulking value be lightening, so can reach purpose of the present invention really.
Claims (32)
1. omnidirectional reflection is characterized in that it comprises:
One dielectric, tool cyclic variation and have at least one dielectric unit on dielectric constant, this dielectric unit has one first dielectric layer, one second dielectric layer and one the 3rd dielectric layer at least, these dielectric layers are different mutually on refractive index, to such an extent as to omnidirectional reflection has a reflectivity and a penetrability, this reflectivity total reflection substantially one has the once light of one first wave-length coverage, and this penetrability transmission one has the secondary light of second wave-length coverage beyond first wave-length coverage.
2. according to the omnidirectional reflection described in the claim 1, it is characterized in that: described first, second and third dielectric layer has one first refractive index, one second refractive index and a third reflect rate respectively, this second dielectric layer is arranged between the first and the 3rd dielectric layer, and second refractive index is lower than first and the third reflect rate, and the third reflect rate is lower than first refractive index.
3. according to the omnidirectional reflection described in the claim 1, it is characterized in that: described first, second and third dielectric layer is formed by being selected from following three dielectric materials layers that constitute in the group at least: titanium dioxide, silicon dioxide, tantalum pentoxide, aluminium oxide, magnesium oxide, zirconia, magnesium fluoride, barium fluoride and calcirm-fluoride.
4. according to the omnidirectional reflection described in the claim 1, it is characterized in that: described first, second and third dielectric layer is made by titanium dioxide, silicon dioxide and tantalum pentoxide respectively.
5. light-emitting device of being made by omnidirectional reflection is characterized in that it comprises:
One luminescence unit can produce the once light with one first wave-length coverage;
One wavelength converting member, be connected in luminescence unit be used for conversion portion once light become a secondary light with one second wave-length coverage; And
First omnidirectional reflection of one omnirange photonic crystal is connected in described wavelength converting member and is used to receive this secondary light, and the remaining once light of not changed by wavelength converting member.
6. according to the light-emitting device described in the claim 5, it is characterized in that: described first omnidirectional reflection has at least one dielectric unit, this dielectric unit has one first dielectric layer and one second dielectric layer at least, the refractive index of these dielectric layers is different mutually, so that having one, first omnidirectional reflection transmits the penetrability of secondary light through first omnidirectional reflection, and the reflectivity of a long translation building block of optical echo of a total reflection substantially residue.
7. according to the light-emitting device described in the claim 5, it is characterized in that: described first omnidirectional reflection has at least one dielectric unit, this dielectric unit has one first dielectric layer, one second dielectric layer and one the 3rd dielectric layer at least, the refractive index of these dielectric layers is different mutually, so that having one, first omnidirectional reflection transmits secondary light through the reflexive mirror that penetrates of first omnirange, and the reflectivity of a long translation building block of optical echo of a total reflection substantially residue.
8. according to the light-emitting device described in the claim 7, it is characterized in that: described first, second and third dielectric layer has one first refractive index, one second refractive index and a third reflect rate respectively, second dielectric layer is arranged between the first and the 3rd dielectric layer, and second refractive index is lower than first and the third reflect rate, and the third reflect rate is lower than first refractive index.
9. the light-emitting device described in according to Claim 8, it is characterized in that: described luminescence unit has at least one luminescence component, and this luminescence component is selected from light-emitting diode, Organic Light Emitting Diode or macromolecule Organic Light Emitting Diode.
10. according to the light-emitting device described in the claim 9, it is characterized in that: described luminescence component is the light-emitting diode of 350nm to the once light of 470nm for launching wave-length coverage.
11. the light-emitting device according to described in the claim 10 is characterized in that: described wavelength converting member is a phosphor body, and the once light that light-emitting diode is launched can be transformed into the secondary light to the 700nm wave-length coverage by 400nm by this phosphor body.
12. according to the light-emitting device described in the claim 11, it is characterized in that: described wavelength converting member has a upper surface and a lower surface in contrast to upper surface, described first omnidirectional reflection is arranged on the upper surface of this wavelength converting member, and described luminescence component is embedded in the described wavelength converting member and a lower surface at wavelength converting member.
13. according to the light-emitting device described in the claim 12, it is characterized in that: described light-emitting device more comprises second omnidirectional reflection, one first substrate and one second substrate of an omnirange photonic crystal, this first and second substrate is separately positioned on the upper surface and the lower surface of wavelength converting member, luminescence component be embedded in the wavelength converting member and the position at lower surface, first and second omnidirectional reflection is respectively formed on first and second substrate.
14. the light-emitting device according to described in the claim 13 is characterized in that: described second omnidirectional reflection has at least one dielectric unit, and this dielectric unit has at least two refractive indexes different dielectric layer mutually.
15. the light-emitting device according to described in the claim 13 is characterized in that: described light-emitting device more comprises a metallic reflector, and this metallic reflector is formed on described second omnidirectional reflection.
16. according to the light-emitting device described in the claim 11, it is characterized in that: described light-emitting device more comprises second omnidirectional reflection, one first substrate and one second substrate of an omnirange photonic crystal, this wavelength converting member has a upper surface, a lower surface and a plural side in contrast to upper surface, this first and second substrate is separately positioned on the upper surface and the lower surface of wavelength converting member, first and second omnidirectional reflection is respectively formed on first and second substrate, and luminescence component is embedded on the side wherein of wavelength converting member.
17. the light-emitting device according to described in the claim 16 is characterized in that: described luminescence unit has plural luminescence component, and these luminescence components are embedded on wherein at least one side of wavelength converting member.
18. the light-emitting device according to described in the claim 17 is characterized in that: described second omnidirectional reflection has at least one dielectric unit, and this dielectric unit has at least two refractive indexes different dielectric layer mutually.
19. the light-emitting device according to described in the claim 18 is characterized in that: described light-emitting device more comprises at least one metallic mirror, and this metallic mirror is formed on described side, and covers these luminescence components.
20. according to the light-emitting device described in the claim 11, it is characterized in that: described light-emitting device more comprises one first substrate, described wavelength converting member has a upper surface and a lower surface in contrast to upper surface, first substrate is formed on the upper surface of wavelength converting member, first omnidirectional reflection is formed on first substrate, and luminescence component is embedded within the lower surface of wavelength converting member.
21. according to the light-emitting device described in the claim 20, it is characterized in that: described light-emitting device more comprises second omnidirectional reflection and a metallic reflector of an omnirange photonic crystal, described luminescence component has a lower surface, this second omnidirectional reflection is embedded within the lower surface of wavelength converting member, and have a upper surface and a lower surface in contrast to upper surface, the upper surface of this second omnidirectional reflection is formed on the lower surface of luminescence component, and this metallic reflector is formed on the lower surface of this wavelength converting member and covers the lower surface of second omnidirectional reflection.
22. the light-emitting device according to described in the claim 21 is characterized in that: described light-emitting device more comprises second substrate that is formed on the metallic reflector.
23. the light-emitting device according to described in the claim 17 is characterized in that: described second omnidirectional reflection has at least one dielectric unit, and this dielectric unit has at least two refractive indexes different dielectric layer mutually.
24. according to the light-emitting device described in the claim 20, it is characterized in that: described light-emitting device more comprises second omnidirectional reflection and one second substrate of an omnirange photonic crystal, this light-emitting component has a lower surface, this second omnidirectional reflection is embedded in the lower surface of this wavelength converting member, and have a upper surface and a lower surface in contrast to upper surface, the upper surface of this second omnidirectional reflection is formed on the lower surface of this luminescence component, and this second substrate is formed on the lower surface of this wavelength converting member and covers this second omnidirectional reflection.
25. the light-emitting device according to described in the claim 24 is characterized in that: described light-emitting device more comprises a metallic mirror that is formed on second substrate, and metallic mirror covers second substrate.
26. the light-emitting device according to described in the claim 25 is characterized in that: described second omnidirectional reflection has at least one dielectric unit, and this dielectric unit has at least two refractive indexes different dielectric layer mutually.
27. the light-emitting device according to described in the claim 7 is characterized in that: described first, second and third dielectric layer is selected from following at least three dielectric materials that constitute in the group: titanium dioxide, silicon dioxide, tantalum pentoxide, aluminium oxide, magnesium oxide, zirconia, magnesium fluoride, barium fluoride and calcirm-fluoride.
28. the light-emitting device according to described in the claim 7 is characterized in that: described first, second and third dielectric layer is made by titanium dioxide, silicon dioxide and tantalum pentoxide respectively.
29. according to the light-emitting device described in the claim 21, it is characterized in that: described luminescence component is made of the luminescent crystal that a brilliant base material and of heap of stone is formed on this brilliant base material of heap of stone, this second omnidirectional reflection is formed on the lower surface of this brilliant base material of heap of stone, and this brilliant base material of heap of stone is one to be selected from the of heap of stone brilliant base material of sapphire, zinc selenide, zinc oxide or gallium nitride.
30. the light-emitting device according to described in the claim 29 is characterized in that: described brilliant base material of heap of stone is a sapphire.
31. according to the light-emitting device described in the claim 24, it is characterized in that: described luminescence component is made of the luminescent crystal that a brilliant base material and of heap of stone is formed on the brilliant base material of heap of stone, this second omnidirectional reflection is formed on the lower surface of this brilliant base material of heap of stone, and this brilliant base material of heap of stone is one to be selected from the of heap of stone brilliant base material of sapphire, zinc selenide, zinc oxide or gallium nitride.
32. the light-emitting device according to described in the claim 31 is characterized in that: described brilliant base material of heap of stone is a sapphire.
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| CNB2003101169269A CN100337337C (en) | 2003-07-18 | 2003-12-01 | Omnidirectional reflector and luminous apparatus produced thereby |
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| CN03145993 | 2003-07-18 | ||
| CN03145993.5 | 2003-07-18 | ||
| CNB2003101169269A CN100337337C (en) | 2003-07-18 | 2003-12-01 | Omnidirectional reflector and luminous apparatus produced thereby |
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