CN1576386A - Shutter disk and blade for physical vapor deposition chamber - Google Patents
Shutter disk and blade for physical vapor deposition chamber Download PDFInfo
- Publication number
- CN1576386A CN1576386A CN 200410070866 CN200410070866A CN1576386A CN 1576386 A CN1576386 A CN 1576386A CN 200410070866 CN200410070866 CN 200410070866 CN 200410070866 A CN200410070866 A CN 200410070866A CN 1576386 A CN1576386 A CN 1576386A
- Authority
- CN
- China
- Prior art keywords
- chamber
- dish
- main body
- central boss
- disc main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005240 physical vapour deposition Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 230000007246 mechanism Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008093 supporting effect Effects 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 claims 1
- 238000012216 screening Methods 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000000429 assembly Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention generally provides a method and apparatus for use in a physical vapor deposition chamber. In one embodiment, invention provides a shutter disk mechanism that eliminates the need for axially orientating a shutter disk to a robot blade that transfers the shutter disk to a substrate support.
Description
Technical field
Embodiments of the invention relate generally to physical vapor deposition chamber.
Background technology
Many semiconductor technologies are all carried out in vacuum environment usually.For example, physical vapor deposition (PVD) is generally carried out in sealing chamber, and described sealing chamber has the pedestal that is used for support arrangement substrate thereon.Pedestal generally includes substrate support, and described substrate support has the electrode that is arranged in wherein during handling substrate is remained on the substrate support statically.Generally be supported on the substrate, be typically secured to the top of chamber by the target that material constituted that will be deposited on the substrate.Supply is from the formed plasma body of the gas of for example argon gas between substrate and target.Target is made that by biasing the ion in the plasma body quickens towards target.The ionic bombardment target makes material be removed from target.The material of removing is attracted to substrate, and deposits the layer of material film on substrate.
Usually, in the PVD chamber, carry out two and regulate operation to guarantee processing performance.First regulates process quilt is called pre-burning (burn-in) target.The target pre-burning is generally removed oxide compound and other impurity from the surface of target, and has been exposed to atmosphere usually in the chamber or execution after for some time of having stopped using.During pre-sinter process, will assist (uitility) wafer or cover dish to be arranged on the substrate support, be deposited in the supporting to prevent target material.Pre-sinter process generally comprises at indoor formation plasma body and uses this plasma body to remove the bill of material surface layer from target.
Second regulates process quilt is called coating (pasting).Apply general on the material that is deposited on during the conventional P VD technology on the chamber component, applying one deck coverture.For example, the PVD of titanium nitride uses and produce one deck titanium nitride usually on the PVD chamber surface.This titanium nitride layer is frangible usually, and may peel off during subsequent technique.Apply and generally on titanium nitride layer, apply one deck titanium.This titanium layer prevents that mainly following titanium nitride from peeling off or come off.Usually, come coating chamber, for example use after per 25 substrates of traditional titanium nitride PVD art breading with predetermined space.As the target pre-burning, cover dish and be disposed on the substrate support, be deposited on the substrate support at target material during the coating processes preventing.
In addition, apply in succession in the PVD technology of titanium and titanium nitride in the original place, target need clean before each titanium deposition, may take nitride on the target to from depositing to titanium nitride on the last substrate to remove.Usually, the cleaning of target is similar to pre-sinter process, continues several seconds, and comprises utilizing and cover dish protection substrate support.
After each pre-burning, coating and cleaning are finished, will cover to spiral and forward a vacant position to by being arranged in the indoor mechanical manipulator of PVD, cover dish in described position and can not disturb indoor depositing operation.In order to cover the position centering of dish, used a transmitter being coupled on the axle of mechanical manipulator, to detect the position of rotation of this mechanical manipulator.
This device is used for detecting and is arranged in spare bits and puts the problem of the position of covering dish and be that transmitter does not possess determines to cover the ability of dish to the relative position of mechanical manipulator.For example, covering the part that dislocation between dish and the mechanical manipulator may cause covering dish stays on the path of ceramic substrate supporting.When ceramic supporting was lifted to handle the position, the part of substrate may contact covered dish, and this may cause the damage of substrate or substrate to misplace on ceramic supporting.And, contact with ceramic supporting if cover dish, the cracked or damage of ceramic supporting possibility, and be forced to displacement.In addition, correctly do not aim on mechanical manipulator if cover dish, this dish may cause producing undesirable deposition thus with respect to the ceramic supporting dislocation during pre-burning and coating processes on the part of ceramic supporting.Deposition material on the ceramic supporting may cause that generation, the wafer of particulate scratch the deterioration with handling property.
Therefore, need a kind of improved PVD treatment chamber that covers the dish sensor-based system that has.
Summary of the invention
The present invention generally provides the method and apparatus that uses in physical vapor deposition chamber.In one aspect of the invention, provide a kind of disc mechanism that covers, this covers disc mechanism has eliminated and will cover the dish axial location to this being covered the needs that coil the robot blade be sent to substrate support.
In one embodiment, the dish that covers that is used for covering at physical vapor deposition chamber substrate support comprises: by outward flange, extend to described outer peripheral upper surface and with the disc main body that lower surface defined of described upper surface positioned opposite.The described lower surface of described disc main body comprises central boss and flange.Has the groove that coaxially forms with described disc main body in the described central boss.Flange is pressed close to described outer edge extension from described lower surface and is lower than described central boss.
In another embodiment, physical vapor deposition chamber comprises the chamber main body, is furnished with disc main body in the main body of chamber.Be coupled to housing seal the sidewall of described chamber main body.Disc main body has central shaft, and by outward flange, extend to described outer peripheral upper surface and defined with the lower surface of described upper surface positioned opposite.The described lower surface of disc main body comprises from the central boss of described lower surface extension with from described lower surface presses close to the flange that described outward flange extends, and wherein said flange extension is lower than described central boss.Aligning parts is arranged between central boss and the robot blade, and described robot blade is suitable for moving described disc main body between described housing and chamber main body.Aligning parts is configured to mesh described disc main body along described central shaft.
In one embodiment, a kind of being used for located the method for covering dish in having the physical vapor deposition chamber of substrate support, generally comprise: will cover dish from the substrate support vertical partition; At described substrate support with describedly cover mechanically moving hand-held board between the dish; With the aligning parts that utilization is arranged along the described central shaft that covers dish, mesh described dish and the described robot blade of covering.
Description of drawings
By with reference to illustrated embodiments of the invention in the accompanying drawings, can obtain more specific description of the present invention to top brief overview.Yet, should be noted that accompanying drawing just illustrates exemplary embodiments of the present invention, therefore not will be understood that accompanying drawing has limited scope of the present invention, because the present invention can have other equivalent embodiment.
Fig. 1 has described a semiconductor process chamber, and it has an embodiment of the sensor module that is suitable for detecting the position of covering disc mechanism;
Fig. 2 A-B is the sectional view and the orthographic plan of a part of the treatment chamber of Fig. 1;
Fig. 3 has described the sectional view of the sensor module got along the section line 3-3 of Fig. 2 A;
Fig. 4 has described to have the part sectioned view of another treatment system of another embodiment that covers disc mechanism;
Fig. 5 has described the supporting plate that covers disc mechanism of Fig. 4 and has covered the sectional view of dish;
Fig. 6 has described to be arranged in the dish that covers of Fig. 5 on the substrate support.
For the ease of understanding, indicate components identical shared among a plurality of figure with identical label in passable place.
Embodiment
The present invention usually provides the semiconductor processing system with sensor module, and described sensor module is suitable for the vacant position of test example as the auxiliary wafer that covers dish.This vacant position be defined as substrate support (with substrate placed on it) can vertical shifting and can not contact cover dish or with the position of the mobile relevant mechanism of covering dish.Though be that explanation is of the present invention in physical vapor deposition chamber, but this openly is an example, therefore the present invention can be applied in other semiconductor process chambers, as long as in these semiconductor process chambers, be useful confirming to be arranged in the auxiliary wafer on the substrate support or the vacant position of other devices between substrate process operations.
Fig. 1 has described semiconductor process chamber 100, and it comprises an embodiment of the sensor module 110 of the vacant position that is suitable for detecting auxiliary wafer or covers dish 114.Usually, sensor module 110 be used to guarantee to cover dish 114 can be during handling in the position of contact substrate support 104 or substrate 112 placed on it.An example of the treatment chamber 100 that can benefit from the present invention is IMPVECTRA
TMThe PVD treatment chamber, this treatment chamber can acquire from Material Used (Applied Materials) company of the Santa Clara that is positioned at the California.
This exemplary treatment chamber 100 comprises chamber main body 102 and cap assemblies 106, and both define the processing volume 160 of easily finding time.Main body 102 common stainless steel plate manufacturings in chamber by monolithic aluminium or welding.Chamber main body 102 generally comprises sidewall 152 and bottom 154.Sidewall generally comprises a plurality of holes, and these holes comprise turnover port, pump suction port and cover dish port one 56 (turnover and pump are not shown inhale port).Sealable turnover port provides the entrance and exit of substrate 112 to treatment chamber 100.Pump is inhaled port and is coupled to the pump desorption system (also not shown) of finding time and controlling the pressure in the processing volume 160.Cover dish port one 56 and be configured to when covering dish 114 when being in vacant position, at least a portion that allows to cover dish 114 is passed through this port.Housing 116 generally covers and covers dish port one 56, to keep the vacuum integrity in the processing volume 160.
The cap assemblies 106 general supportings of main body 102 are suspended on the circular cowling 162 at this place, circular cowling 162 supporting shade rings 158.Shade ring 158 is configured to pass through shade ring 158 centers and exposed portions with what deposition was limited to substrate 112 usually.
At the lower position place, substrate support 104 is positioned under the cover 162, to allow allowing substrate 112 to take out from chamber 100 by the port in the sidewall 152 when throwing off ring 158 and cover 162.The lifter pin (not shown) moves through substrate support 104 selectively, so that substrate 112 is separated from substrate support 104, thereby be convenient to by the wafer transfer mechanism that is arranged in treatment chamber 100 outsides substrate 112 be tightened, this wafer transfer mechanism for example is a single mount plate mechanical manipulator (not shown).Corrugated tube 186 is usually placed between substrate support 104 and the bottom, chamber 154 and flexible sealing, the vacuum integrity of holding chamber volume 160 thus is provided betwixt.
The angle direction of driving mechanism 126 general control supporting plates 118.Normally, supporting plate 118 in vacant position shown in Figure 1 and will cover that dish 114 is placed to and the second position of substrate support 104 essentially concentrics between move.At second position place, covering dish 114 can (by using lifter pin) be sent to substrate support 104 during target pre-burning and chamber coating processes.Usually, supporting plate 118 turns back to vacant position during target pre-burning and chamber coating processes.
In the time of in being in vacant position, a part of covering dish 114 is arranged in the housing 116.Housing 116 is usually by forming with the 102 identical materials manufacturings of chamber main body.Housing 116 is sealingly secured to chamber main body 102, and in one embodiment, the joint between housing 116 and main body 102 welds continuously to guarantee vacuum-packed seam.
Housing passes first window 134 that housing 116 is arranged hermetically 116 general comprising at least.First window 134 is oriented to allow sensor module 110 to detect the existence of covering dish 114 and/or supporting plate 118 in the housing 116.In the embodiment that Fig. 1 describes, housing 116 is included in second window 136 of bottom 140 formation of housing 116 in addition, and described second window 136 is relative with first window 134 that forms in the top 138 of housing 116.Window 134,136 forms by substantially transparent or to the expedite material manufacturing of the feeler mechanism of sensor module 110, and is for example quartzy.
Fig. 2 A-B has described the vertical view and the sectional view of housing 116, illustrates sensor module with respect to an embodiment of the position of covering dish 114, supporting plate 118 and substrate support 104.Encourage the reader simultaneously with reference to figure 2A and 2B.
In the embodiment that Fig. 2 A-B is described, sensor module comprises first sensor 202, second transmitter 204 and the 3rd transmitter 206.The top 134 that transmitter 202,204 and 206 is coupled to housing 116 respectively by support 208,210 and 212.Transmitter 202,204 and 206 usually provides the signal that cover dish 114 and/or the existence of supporting plate 118 of indication below them.
First and second transmitters 202,204 are usually located at by on the defined straight line 224 between the center 214 of substrate support 104 and the reference point 216.Reference point 216 generally is positioned at when covering dish 114 center that (as shown in the figure) covers dish 114 when being in vacant position.In one embodiment, center and reference point 214,216 are also equidistant with the central shaft 218 of axle 120.When line 224 during along the shortest distance of covering between dish 114 (when correct location on supporting plate 118 time) and the substrate support 104, transmitter 202,204 allows transmitter to provide along the position of line 224 to cover the reliable indication that dish 114 breaks away from substrate support 104 fully.
First sensor 202 generally detects the position of covering dish 114 when being in vacant position.Second transmitter is general to be detected to cover as perspective and coils 222 when dish dislocation location but still covering can be detected by first sensor 202 time on supporting plate 118 shown in the dish 222.For example, cover dish 222 and may be positioned to depart from the center on supporting plate 118, it will coil 222 placements and obtain in the housing 116 too many.Though covering the off-centered position of dish 222 will still can make the substrate support vertical shifting and can not contact and cover dish 222, but when in order to apply or target pre-burning and when rotating to the second position, covering dish 222 will misplace with substrate support 104, and this will allow material to deposit to unfriendly on the substrate support 104.Therefore, second transmitter 204 covers dish 114 dislocation to controller 190 indications, and controller 190 is constantly stopping production sequence to keep in repair to operator's signalling or appropriate.
The 3rd transmitter 206 generally is oriented to observe the part or the projection 220 of supporting plate 118, to indicate supporting plate 118 in vacant position.The projection 220 of supporting plate 118 can cover by crested dish 114, perhaps stretches out to cover outside the dish 114 to allow detecting supporting plate 118 when dish 114 also is in vacant position.Perhaps, the 3rd transmitter 206 can be oriented to observe substrate by second window 134 or other windows arranged in the housing 116.
Fig. 3 has described the sectional view along section line 3-3 of an embodiment of transmitter 202,204 among Fig. 2 A.Transmitter 202,204 generally comprises a projector 302 and a receptor 304.Projector 302 generates for example signal of light beam 306, and it passes window 134,136 and impacts on the receptor 304.When covering dish 114 obstructions or blocking light beam 306, transmitter 202,204 change states cover existing of dish 114 with indication.The example that can be used for detecting the transmitter 202,204 that covers dish 114 can obtain from the BannerEngineering Corporation company that is positioned at Minnesotan Minneapolis city.Perhaps can use the transmitter of the other types that comprise reflective sensor (that is, reverberator and receptor being configured to the equipment of single cell).The 3rd transmitter 206 is disposed the existence that detects supporting plate 118 similarly.
Fig. 4 has described to have the part sectioned view of the exemplary process system 400 of another embodiment that covers disc mechanism 408 that is used for protecting selectively substrate support 404.General and the above-mentioned treatment system of treatment system 400 100 is similar, and comprise the chamber main body 402 that is coupled to housing 416, be moved to as shown in figure when breaking away from substrate support 404 when covering dish 414, described housing 416 provides the storage location of covering dish 414 (among Fig. 4 shown in the perspective).
Cover disc mechanism 408 and usually be arranged near substrate support 404, and comprise that supporting covers the supporting plate 418 of dish 414.Supporting plate 418 can rotate around axle 420 between the first vacant position and the second position, the described first vacant position makes that covering dish 414 is arranged in (as shown in Figure 4) in the housing 416 at least in part, and the dish 414 that will cover that the described second position is convenient to as mentioned above (and as shown in Figure 6) is sent to substrate support 404.
Supporting plate 418 is usually formed by the rigid material of using in the vacuum-treat environment that is adapted at physical vapor deposition chamber for example.In one embodiment, supporting plate 418 is formed by the titanium manufacturing.In another embodiment, similar basically or identical materials manufacturing forms supporting plate 418 by thermal expansivity with covering dish 414, to minimize moving between them.
In one embodiment, supporting plate 418 has main body 442, and main body 442 comprises hub 428, supporting boss 490 and flange groove 492.Hub 428 is coupled to axle 420, so that the rotation of supporting plate 418.The main body 442 of supporting plate 418 is configured to allow supporting plate 418 to turn to vacant position and can not contact the lifter pin 406 that extends from substrate support 404 from the second position.
The main body 442 of supporting plate 418 can comprise the projection 482 that extends outside the periphery that covers dish 414 in addition.When the layout of supporting plate 418 made in supporting plate 418 is withdrawn housings 416, projection 482 can be positioned to change the output state of sensor module 410.Sensor module 410 can be configured to similar to the sensor module 110 shown in Figure 1A.Sensor module 410 can also be configured to the sensor assembly 110, supporting plate 118 and to cover dish 114 similar, with supporting plate 418 with cover dish 414 and interrelate.
With reference to the supporting plate 418 and the sectional view that covers dish 414 of figure 5, the supporting boss 490 of supporting plate 418 is arranged on the upper surface 484 of supporting plate 418 in addition.Supporting boss 490 is suitable for supporting the central boss 520 of extending from the lower surface 504 that covers dish 414.Supporting boss 490 has the particulate that makes supporting plate 418 and cover between the dish 414 and produces minimized smooth finish, and this smooth finish is better than about 32RMS in one embodiment.
Supporting boss 490 joins with aligning parts 500, and aligning parts 500 is configured to and lower surface 504 engagements of covering dish 414.Aligning parts 500 keeps covering dish 414 with respect to supporting plate 418 with pre-determined direction.Aligning parts 500 general centerings equal the radial distance between the center of axle 420 and substrate support 404 to the radial distance from the medullary ray of axle 420.Aligning parts 500 is configured to prevent to cover dish 414 and comes off from supporting plate 418 during transmitting.When aligning parts 500 in the axial direction when covering dish 414 centrally aligned, advantageously eliminated simultaneously between dish 414 and supporting plate 418, to be rotated directed needs at the aligned by thermal distortion holding tray 414 and supporting plate 418, will not coil ability in 414 predetermined positions (for example coaxial) that are placed on the substrate support 404 and can not change supporting plate 418.
In one embodiment, aligning parts 500 is at supporting boss 490 and covers the post 530 that extends between the lower surface 504 of dish 414.Alignment post 530 can be the integral part of the main body 442 of supporting plate 418, perhaps can comprise an independently element.Can also recognize alignment post 530 or can be to cover a dish part of 414 and can join with the hole that forms in the supporting plate 418.
In the embodiment that Fig. 5 described, alignment post 530 has to be coupled to cover coils 414 first end 510.Alignment post 530 can be coupled to supporting plate 418 by several different methods, comprise be threaded, riveted joint, soldering, welding, press-fit be connected (staking) and other ways with filleting.Second terminal 512 and first end 510 of alignment post 530 is relatively arranged, and is configured to be engaged in the blind hole 502 that forms in the lower surface 504 that covers dish 414.
Second end 512 of alignment post 530 can chamfering, rounding or band tapering, so that aim at and mesh with the blind hole 502 of covering dish 414.In one embodiment, blind hole 502 can optionally comprise tubaeform sidewall 596, enters into blind hole 502 with further enhancing post 530.
Form interval region 498 in the upper surface 484 of supporting plate 418, it is laterally separated supporting boss 490 and flange groove 492.Interval region 498 generally is in the height lower than supporting boss 490 with respect to the lower surfaces 516 of supporting plate 418, and is in the height higher than flange groove 492 with respect to lower surface 516.When covering dish 414 when being bearing on the supporting boss 490, the rest part that the lower height of interval region 498 allows to cover dish 414 and supporting plate 418 keeps the relation separated.
Covering dish 414 generally is the main body that is essentially dish type 508 that defines between lower surface 504 and upper surface 506.Main body 508 can be formed by the material manufacturing that is adapted at the indoor use of PVD, for example stainless steel or titanium, and other materials.In one embodiment, main body 508 is formed by the material manufacturing that has similar or identical basically thermal expansivity with respect to the material that constitutes supporting plate 418.Alternatively, hole 480 can form the main body 442 of passing supporting plate 418, with rotational inertia, weight and the thermal inertia that minimizes supporting plate 418.
The lower surface 504 that covers dish 418 comprises central boss 520 and the collar flange 522 that extends downwards.Central boss 520 is configured to join with the aligning parts 500 of supporting plate 418, and in the embodiment that Fig. 5 described, is included in the central boss 520 along the blind hole 502 of the centerline axis of covering dish 418 to formation.Usually, central boss 520 has the surface smoothness similar with the supporting boss 490 of supporting plate 418 (promptly the same smooth with about 32RMS at least), to minimize the particulate generation between them.
Covering dish 414 can comprise central boss 520 and flange 522 separated grooves 524.Groove 524 allows all to keep not contacting supporting plate 418 when covering the major part of covering dish 414 when dish 414 is placed on the supporting plate 418.
With reference now to Fig. 5 and Fig. 6,, flange 522 is oriented to press close to cover the periphery 514 of dish 414 and extend towards ledge surface 526 downwards.Ledge surface 526 is positioned on the plane of the plane parallel that is defined with central boss 520, and perpendicular to the medullary ray of disc main body 508.Flange 522 extends to height above central boss 520 and groove 524 from lower surface 504.The height of selecting flange 522 is with when covering dish 414 and be loaded on the supporting plate 418, keeping and flange groove 492 provides the interval between disc main body 508 and the substrate support 404 (referring to Fig. 6) when separating.
Therefore, embodiments of the invention provide a kind of disc mechanism that covers that advantageously helps the protection substrate support during regulating processing.In one embodiment, covering disc mechanism provides and has covered the dish location information related.In another embodiment, cover disc mechanism and comprise aligning parts, this aligning parts has advantageously been eliminated will cover the needs that disc spins navigates to supporting plate.
Though above-mentioned explanation concentrates on the preferred embodiments of the present invention, can design of the present invention other and can not depart from base region of the present invention, and scope of the present invention is determined by appended claims with further embodiment.
Claims (32)
1. dish that covers that is used for covering substrate support at physical vapor deposition chamber, the described dish that covers comprises:
By outward flange, extend to described outer peripheral upper surface and with the disc main body that lower surface defined of described upper surface positioned opposite, wherein said lower surface also comprises:
Central boss from described lower surface extension;
The groove that in described central boss, coaxially forms with described disc main body; With
Press close to the flange that described outer edge is extended from described lower surface, described flange extension is lower than described central boss.
2. the dish that covers as claimed in claim 1, wherein said central boss is perpendicular to the central shaft of described disc main body.
3. the dish that covers as claimed in claim 2, wherein said central boss has the surface smoothness that is better than about 32RMS.
4. the dish that covers as claimed in claim 1, wherein said disc main body is formed by stainless steel or titanium manufacturing.
5. the dish that covers as claimed in claim 1, wherein said groove also comprises outside tubaeform sidewall.
6. dish that covers that is used for covering substrate support at physical vapor deposition chamber, the described dish that covers comprises:
Disc main body, described disc main body has central shaft, and by outward flange, extend to described outer peripheral upper surface and defined with the lower surface of described upper surface positioned opposite, wherein said lower surface also comprises:
Central boss from described lower surface extension;
In described central boss, form along the central shaft of described disc main body, have a blind hole of outside tubaeform sidewall;
Press close to the flange that described outer edge is extended from described lower surface, described flange extension is lower than described central boss until the ledge surface parallel with described central boss; With
The annular recesses that between central boss described in the described lower surface and described flange, forms.
7. physical vapor deposition chamber comprises:
Have the chamber main body of sidewall and bottom, described sidewall and bottom portion defining go out processing volume;
Substrate support;
Be coupled to the housing of described chamber main body hermetically;
Disc main body, described disc main body has central shaft, and by outward flange, extend to described outer peripheral upper surface and defined with the lower surface of described upper surface positioned opposite;
Mechanical manipulator with supporting plate, described supporting plate are suitable for moving described disc main body between described housing and described chamber main body; With
Be arranged in the aligning parts between described disc main body and the described supporting plate, wherein said aligning parts is along described central shaft and the engagement of described disc main body.
8. chamber as claimed in claim 7 also comprises:
At least first sensor, it is adjacent with described housing that described first sensor is arranged to, and be oriented to detect in described disc main body or the described supporting plate existence of a part in described housing of at least one.
9. chamber as claimed in claim 7, wherein said lower surface also comprise from the central boss of described lower surface extension with from described lower surface presses close to the flange that described outward flange extends, and described flange extension is lower than described central boss.
10. chamber as claimed in claim 9, wherein said central boss be perpendicular to the central shaft of described disc main body, and have the surface smoothness that is better than about 32RMS.
11. chamber as claimed in claim 7, wherein said disc main body is formed by stainless steel or titanium manufacturing.
12. chamber as claimed in claim 7, wherein said robot blade is formed by the titanium manufacturing.
13. chamber as claimed in claim 9, wherein said robot blade also comprises:
The protrusion that described central boss is placed on it.
14. chamber as claimed in claim 13, wherein said aligning parts comprises:
Mesh the post of described protrusion and described central boss.
15. chamber as claimed in claim 14, wherein said post is coupled to described protrusion, and cooperates with the blind hole that forms in the described central boss.
16. chamber as claimed in claim 15, wherein said blind hole has tapered sidewalls.
17. chamber as claimed in claim 9, wherein said robot blade also comprises:
Be formed on groove wherein, described groove cooperates with the part of described flange, and described arrangements of grooves becomes to keep the gap between the flange of described robot blade and described disc main body.
18. treatment chamber as claimed in claim 7 also comprises:
First window that in described housing, forms; With
First sensor, described first sensor are oriented to observe in described disc main body or the robot blade at least one by described window.
19. treatment chamber as claimed in claim 18 also comprises:
Second transmitter, described second transmitter is arranged to adjacent with described housing, and is oriented to detect described means for screening in the intravital existence of described shell.
20. treatment chamber as claimed in claim 19 also comprises:
The 3rd transmitter, described the 3rd transmitter are arranged to adjacent with described first and second transmitters, and described the 3rd transmitter is oriented to detect described supporting plate in the intravital existence of described shell.
21. treatment chamber as claimed in claim 7, wherein said housing also comprises:
Be arranged to the projector of described first window; With
Be arranged to the receptor of second window, described second window and described first window relatively are arranged in the described housing, described receptor and described projector, first window and the second window adjusting to a line.
22. a physical vapor deposition chamber comprises:
Have the chamber main body of sidewall and bottom, described sidewall and bottom portion defining go out processing volume;
Cover disc mechanism, the described disc mechanism that covers is arranged in the described processing volume at least in part, and has the robot blade that meshes with aligning parts and cover dish, and described aligning parts is arranged along the described central shaft that covers dish;
Pass the groove that one of described sidewall forms; With
Around described groove, be coupled to the housing of described chamber main body hermetically.
23. chamber as claimed in claim 22 also comprises:
At least first sensor, it is adjacent with described housing that described first sensor is arranged to, and be oriented to detect the described existence of a part in described housing of covering disc mechanism.
24. chamber as claimed in claim 22, wherein said central boss is perpendicular to the central shaft of described disc main body and be parallel to described flange.
Basically similar or identical materials manufacturing forms 25. chamber as claimed in claim 22, wherein said disc main body and described robot blade are by thermal expansivity.
26. chamber as claimed in claim 22, wherein said robot blade also comprises:
The protrusion that described central boss is placed on it.
27. chamber as claimed in claim 26, wherein said aligning parts comprises:
Mesh the post of described protrusion and described central boss.
28. chamber as claimed in claim 27, wherein said post is coupled to described protrusion, and cooperates with the blind hole that forms in the described central boss.
29. chamber as claimed in claim 28, wherein said blind hole has tapered sidewalls.
30. chamber as claimed in claim 22, wherein said robot blade also comprises:
Be formed on groove wherein, described groove cooperates with the part of described flange, and described arrangements of grooves becomes to keep the gap between the flange of described robot blade and described disc main body.
31. one kind is used for the method that dish is covered in the location in physical vapor deposition chamber, described physical vapor deposition chamber has substrate support, and described method comprises:
To cover dish from the substrate support vertical partition;
At described substrate support with describedly cover mechanically moving hand-held board between the dish; With
The aligning parts that utilization is arranged along the described central shaft that covers dish meshes described dish and the described robot blade of covering.
32. method as claimed in claim 31 also comprises:
The described dish that covers is arranged on the periphery of described substrate support the relation that wherein said substrate support and described centre portions maintenance of covering dish are separated.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/626,471 | 2003-07-24 | ||
| US10/626,471 US7008517B2 (en) | 2002-02-20 | 2003-07-24 | Shutter disk and blade for physical vapor deposition chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1576386A true CN1576386A (en) | 2005-02-09 |
Family
ID=34590561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410070866 Pending CN1576386A (en) | 2003-07-24 | 2004-07-23 | Shutter disk and blade for physical vapor deposition chamber |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1576386A (en) |
| TW (1) | TWI356100B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945788A (en) * | 2011-08-16 | 2013-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding device and semiconductor processing equipment using same |
| CN103276352A (en) * | 2013-05-02 | 2013-09-04 | 上海华力微电子有限公司 | Baffle inductor |
| CN104752262A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cover plate detection device and detection method, reaction chamber and semiconductor processing equipment |
| CN104746002A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc transfer device, reaction chamber and plasma processing apparatus |
| CN105097606A (en) * | 2014-05-20 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc and reaction chamber |
| CN106571284A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc system, reaction chamber and semiconductor processing device |
| CN108884559A (en) * | 2015-11-24 | 2018-11-23 | 应用材料公司 | Screen for the precoating in VHF-RF PVD chamber |
| CN110904424A (en) * | 2018-09-17 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Bracket mechanism and reaction chamber |
| CN111919287A (en) * | 2018-04-11 | 2020-11-10 | 应用材料公司 | Method and apparatus for optical shutter disk assembly inspection |
| WO2020233346A1 (en) * | 2019-05-22 | 2020-11-26 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing device |
| CN112501581A (en) * | 2020-11-12 | 2021-03-16 | 北京北方华创微电子装备有限公司 | Shielding disc bearing device in semiconductor processing equipment and semiconductor processing equipment |
| CN115074692A (en) * | 2022-06-24 | 2022-09-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN116034180A (en) * | 2020-07-27 | 2023-04-28 | 应用材料公司 | Substrate holder replacement using protective disk during paste process |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG146547A1 (en) | 2007-03-09 | 2008-10-30 | Applied Materials Inc | High temperature anti-droop end effector for substrate transfer |
| US8807075B2 (en) * | 2008-09-22 | 2014-08-19 | Applied Materials, Inc. | Shutter disk having a tuned coefficient of thermal expansion |
| CN105088167B (en) * | 2014-05-20 | 2018-01-09 | 北京北方华创微电子装备有限公司 | Bogey, reaction chamber and semiconductor processing equipment |
-
2004
- 2004-07-22 TW TW93121934A patent/TWI356100B/en not_active IP Right Cessation
- 2004-07-23 CN CN 200410070866 patent/CN1576386A/en active Pending
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945788B (en) * | 2011-08-16 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding device and semiconductor processing equipment using same |
| CN102945788A (en) * | 2011-08-16 | 2013-02-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding device and semiconductor processing equipment using same |
| CN103276352A (en) * | 2013-05-02 | 2013-09-04 | 上海华力微电子有限公司 | Baffle inductor |
| CN104752262B (en) * | 2013-12-31 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Block disc detector, detection method, reaction chamber and semiconductor processing equipment |
| CN104752262A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cover plate detection device and detection method, reaction chamber and semiconductor processing equipment |
| CN104746002A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc transfer device, reaction chamber and plasma processing apparatus |
| CN105097606B (en) * | 2014-05-20 | 2018-05-08 | 北京北方华创微电子装备有限公司 | One kind blocks disk and reaction chamber |
| CN105097606A (en) * | 2014-05-20 | 2015-11-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc and reaction chamber |
| CN106571284A (en) * | 2015-10-09 | 2017-04-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Shielding disc system, reaction chamber and semiconductor processing device |
| CN106571284B (en) * | 2015-10-09 | 2019-01-18 | 北京北方华创微电子装备有限公司 | Block disc system, reaction chamber and semiconductor processing equipment |
| CN108884559A (en) * | 2015-11-24 | 2018-11-23 | 应用材料公司 | Screen for the precoating in VHF-RF PVD chamber |
| CN111919287A (en) * | 2018-04-11 | 2020-11-10 | 应用材料公司 | Method and apparatus for optical shutter disk assembly inspection |
| CN110904424A (en) * | 2018-09-17 | 2020-03-24 | 北京北方华创微电子装备有限公司 | Bracket mechanism and reaction chamber |
| CN110904424B (en) * | 2018-09-17 | 2022-01-07 | 北京北方华创微电子装备有限公司 | Bracket mechanism and reaction chamber |
| WO2020233346A1 (en) * | 2019-05-22 | 2020-11-26 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing device |
| CN116034180A (en) * | 2020-07-27 | 2023-04-28 | 应用材料公司 | Substrate holder replacement using protective disk during paste process |
| CN112501581A (en) * | 2020-11-12 | 2021-03-16 | 北京北方华创微电子装备有限公司 | Shielding disc bearing device in semiconductor processing equipment and semiconductor processing equipment |
| CN115074692A (en) * | 2022-06-24 | 2022-09-20 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
| CN115074692B (en) * | 2022-06-24 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and process chamber thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200506082A (en) | 2005-02-16 |
| TWI356100B (en) | 2012-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1576386A (en) | Shutter disk and blade for physical vapor deposition chamber | |
| CN108133903B (en) | Joining device, joining system, joining method, and computer storage medium | |
| KR101454068B1 (en) | Substrate position detection apparatus, film deposition apparatus equipped with the same, and substrate position detection method | |
| JPH0615565A (en) | Automatic wafer lapping machine | |
| US20160203997A1 (en) | Substrate processing method | |
| CN108060406B (en) | Shielding platen assembly, semiconductor processing apparatus and method | |
| EP0794528A2 (en) | End effector and method for loading and unloading disks at a processing station | |
| JPH10230449A (en) | Method and device for automatically changing grinding pad for chemical machine grinding device | |
| KR20090032998A (en) | Substrate cleaning apparatus, substrate processing apparatus, substrate cleaning method, substrate processing method and storage medium | |
| KR101972225B1 (en) | Peripheral portion processing device and peripheral portion processing method | |
| JP5726686B2 (en) | Liquid processing apparatus and method for controlling liquid processing apparatus | |
| US20140308813A1 (en) | Methods and apparatus for a non-contact edge polishing module using ion milling | |
| CN103031514A (en) | Shielding device, PVD device with the shielding device and control method of PVD device | |
| JP2002329769A (en) | Alignment equipment | |
| CN101586231A (en) | Film deposition device | |
| JP4321785B2 (en) | Film forming apparatus and film forming method | |
| TWI825241B (en) | Substrate processing device and substrate processing method | |
| TW202044379A (en) | Substrate processing device and substrate processing method | |
| TW202040722A (en) | Processing device and processing method | |
| TWI824080B (en) | Substrate processing device and substrate processing method | |
| JP7203666B2 (en) | LASER PROCESSING APPARATUS, THINNING SYSTEM, LASER PROCESSING METHOD, AND THINNING METHOD | |
| JPH07150350A (en) | Device for locking flat annular disc substrate to substrate supporting pan of vacuum film former | |
| KR20060011671A (en) | Align apparatus of exposing equipment having particle sensing means | |
| WO2006134818A1 (en) | Film forming device, thin-film manufacturing apparatus, and film forming method | |
| JP7398988B2 (en) | sputtering equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |