CN1572901A - 化学气相沉积处理装置 - Google Patents

化学气相沉积处理装置 Download PDF

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Publication number
CN1572901A
CN1572901A CN03149150.2A CN03149150A CN1572901A CN 1572901 A CN1572901 A CN 1572901A CN 03149150 A CN03149150 A CN 03149150A CN 1572901 A CN1572901 A CN 1572901A
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China
Prior art keywords
reactor
parts
workpiece
coating
transport unit
Prior art date
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Pending
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CN03149150.2A
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English (en)
Inventor
格雷戈尔·阿诺尔德
斯特凡·贝勒
安德烈亚斯·吕特林豪斯-亨克尔
马蒂亚斯·比克尔
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Schott AG
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Schott Glaswerke AG
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Publication date
Priority claimed from DE2002128898 external-priority patent/DE10228898B4/de
Application filed by Schott Glaswerke AG filed Critical Schott Glaswerke AG
Publication of CN1572901A publication Critical patent/CN1572901A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/08—Cleaning containers, e.g. tanks
    • B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
    • B08B9/42—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus being characterised by means for conveying or carrying containers therethrough
    • B08B9/426—Grippers for bottles
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    • B29C49/42—Component parts, details or accessories; Auxiliary operations
    • B29C49/4205—Handling means, e.g. transfer, loading or discharging means
    • B29C49/42069—Means explicitly adapted for transporting blown article
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B65D—CONTAINERS FOR STORAGE OR TRANSPORT OF ARTICLES OR MATERIALS, e.g. BAGS, BARRELS, BOTTLES, BOXES, CANS, CARTONS, CRATES, DRUMS, JARS, TANKS, HOPPERS, FORWARDING CONTAINERS; ACCESSORIES, CLOSURES, OR FITTINGS THEREFOR; PACKAGING ELEMENTS; PACKAGES
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • H—ELECTRICITY
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    • C08J2300/00—Characterised by the use of unspecified polymers
    • C08J2300/14—Water soluble or water swellable polymers, e.g. aqueous gels

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

为了方便地将工件放入和移出反应器以使得它们在那里进行化学气相沉积处理，本发明提供一种工件的化学气相沉积处理装置，它包括传送装置和固定到传送装置的至少一个反应器，该处理装置具有至少一个机械控制凸轮并且该反应器具有由至少一个控制凸轮驱动的打开和关闭装置。

Description

化学气相沉积处理装置
技术领域
本申请涉及化学气相沉积处理装置，尤其涉及具有化学气相沉积反应器的化学气相沉积处理装置。
背景技术
中空塑料容器，例如塑瓶，通常具有的对气体的阻隔作用对于预期目的来说是不够的。例如二氧化碳等气体可以扩散到容器外或者容器内部。通常不希望有这种影响。此外，这种影响还导致储存在这些容器里的饮料的保存期缩短
为了消除塑料容器的这些缺点，同时保留它们相对说来的许多优点，例如低重量和对于机械冲击的稳定性，已开发出应用阻隔层或抗扩散层的技术。
用来涂布这些涂层的具体有效和廉价的技术是化学气相沉积(CVD)。在CVD过程中，使用围绕被涂表面的活性化学气体混合物沉积成涂层。
实际上用这种方法从多种气体的混合物中可以产生无限种可能的涂层。特别是氧化物涂层，例如SiO2涂层，已经证实适用于作为扩散阻挡层。
为了实施CVD涂料，可以通过加热或通过导入能量使得生产气体离子化产生化学气体混合物。由于塑料通常不具有足够的热稳定性或具有低软化点，在加热作用下的CVD涂料不适合于涂塑料表面。然而，关于这一点，推荐选择等离子体增强CVD(PECVD)。因为在这种情况下等离子体也对被涂的表面进行加热，所以等离子体脉冲感应CVD涂料(PICVD)尤其适用。
为了在工业规模使用这类处理过程，处理期间需要大量的能在其中在时间上同步或有偏差地进行涂料操作的反应室。因为PICVD涂料是在低压状态下进行的，所以出现了如何将待涂料工件例如空塑料物体放入涂料区并抽空它们的问题。而且，就中空物体来说，只涂内壁或外壁或者是对外壁和内壁应用不同的涂层常常是实用的，结果是中空物体的内部空间和围绕中空物体的区域中充满了不同的生产气体。
发明内容
因此，本发明的目的在于更容易将工件移动进入或从反应器中出来，从而使得工件受到CVD处理。如权利要求1描述的用于工件的CVD处理的装置和根据权利要求15的工件CVD处理方法以令人惊讶的简单方式实现这个目的。优选的改进构成相应的从属权利要求的附加特征。
因此，依照本发明的装置包括传送装置和至少一个反应器，其固定到该传送装置上并且在其中进行CVD处理，该装置具有至少一个机械控制凸轮，并且该反应器具有由至少一个控制凸轮驱动的打开和关闭装置。
除了涂料操作之外，CVD处理也可以包括其它表面处理，例如气相中的表面活化。
如果通过移动通过控制凸轮的反应器致动用于打开和关闭反应器的装置，可以用简单的方法自动开关反应器。
反应器最好包括第一部件和第二部件，这两个部件包围反应器室。
为了这个目的，第一部件与传送装置连接并且第二部件与打开和关闭装置连接。将反应器分成两个部件的设计使得反应器室可以充分地打开并且因此便于插入和移出待涂料的工件。
具体通过以这样一种方式安置控制凸轮来达到这个目的，首先开关装置在打开的时候，在第一次运动中将第二部件从第一部件中移开，并且随后在与第一次运动完全垂直的第二次运动中移动它经过第一部件。
特别地，通过位于第一和第二部件之间的平坦的密封表面可以实现两部件的简单密封。
最好可以采用转动和/或直线运动装置用于传送反应器和/或在其中受到涂料的工件。
开关装置和机械控制凸轮之间的接触可以使用例如与该开关装置连在一起的凸轮辊来实现，于是凸轮辊沿着控制凸轮滚动。在这种方式中，当反应器移动经过控制凸轮时避免了摩擦力。
反应器可以有用来发射电磁波特别是微波的窗口。结果，可以在反应器外形成用于产生等离子体的电磁波，这使得省略掉反应器携带的复杂的电磁波发生器成为可能。
如果反应器具有抽空装置也是特别有益的。结果，可以单独抽空反应器室而不必抽空整个装置，从而提供等离子体所要求的低压。而且为了用生产气体填充反应器室，可以有一个充入生产气体的装置。
特别的，为了充入生产气体，反应器可以配备气体喷枪。例如，使用气体喷枪可以快速地将生产气体充入中空塑料物体的内部。
为了传送工件出入反应器，CVD处理装置最好配备分配轮。这些措施使得可以用简单的方式执行连续的生产过程并且不需要复杂的机械装置。
提供一种在和传送装置相连的反应器里对工件进行CVD处理的方法也包括在本发明的范围内，该方法以特别简单的方式对工件进行导入和移出为特点。依照本发明，为了这个目的，该方法包括把工件插入反应器中、至少抽空反应器室的部分区域、充入生产气体、产生等离子体和移出工件的步骤；其中通过和反应器相连的装置通过机械控制凸轮的运动来实现打开和/或关闭反应器。
产生等离子体的步骤最好包括发射电磁波的步骤。发射脉冲电磁波尤其令人满意。因此，通过在那些待涂料的工件的表面附近作用脉冲等离子体从而实现对工件的PICVD处理。而且，由于发射入微波，等离子体能够吸收高放射能量。
为了使反应器室充分打开以便把工件导入和移出，反应器可以包括至少两个部件，其中在关闭和/或打开反应器的过程中移动该两个部件使它们互相通过并且位于另一个的上方。
对于连续的涂料程序，用分配轮导入和移出工件是有好处的。
依照本发明的方法也可以用于中空物体例如瓶子的CVD处理。为了涂料中空物体，抽空至少部分反应器室的步骤可以包括抽空由中空物体包围的空间的步骤。特别是对于内部涂料，为了这个目的，生产气体导入到中空物体包围的空间内。最后，在由中空物体包围的空间内产生等离子体的处理步骤对于中空物体的内部处理是可靠的。
附图说明
下面在最佳实施例的基础上更详细地解释本发明。关于附图，同样的附图标记表示相同或相似的部件，附图中：
图1是表示反应器的实施例的局部剖面图，
图2是反应器的顶视图，和
图3A-3D举例说明将工件导入反应器和从反应器移出的不同阶段。
具体实施方式
图1举例说明依照本发明的工件的CVD处理装置中的反应器的实施例的局部剖面图。该反应器是为处理中空物体特地设计的，尤其对于例如塑料瓶等的中空塑料物体。整个反应器用3表示，包括包围反应器室9的两个部件即第一部件5和第二部件7。通过该两个部件5和7之间的密封件8将反应器室相对于外界环境密封起来。在这种情况下两个部件5和7之间的密封表面是平面。
用于打开和关闭反应器的装置13与部件7连在一起。该装置13包括一个和凸轮辊171、172、173相连的延伸臂，延伸臂与在CVD处理装置上安置的控制凸轮15的周边啮合。因此，该凸轮辊通过沿着控制凸轮15的轮廓滚动，可以使第二部件7从第一部件移开并且以与该运动方向垂直的方向经过第一部件。
接收装置19用于固定待涂的塑料瓶11，并且使得瓶11的内部相对于反应器室9的剩余空间密封。
在反应器的第一部件5中具有与泵装置连接的通道21，可以用来作为抽空反应器室的装置。作为举例，在转动装置的情况下，通道通过位于转动装置中心的旋转真空通路与真空泵相连。
CVD涂料装置的该实施例可以用于涂中空塑料物体的外面和内壁两部分。为了该目的，在反应器中也有一个能够输送合适的生产气体进入瓶子内部的气体喷枪23。气体喷枪23与提升装置25固定在一起，于是当瓶子已经固定在接收装置19中时喷枪能够移进瓶子中，并且在瓶子移动之前从瓶子内部中移出。为了该目的，可以由气动驱动或同样地使用控制凸轮来驱动气体喷枪。通过密封件27使得输入通道29相对于外界环境密封起来。为了该目的，可以将密封件27设计为径向密封或轴向密封。气体喷枪通过连接短管29和气体输入端相连。
在反应器室已经抽空并且将生产气体输入到室内之后，在反应室内通过微波作用产生等离子体。瓶子或中空塑料物体外面和里面的气体成分可以是不相同的。作为举例，可以充分抽空反应器室，于是在那里仅残存残留气体。相反地，生产气体通过气体喷枪能导入到瓶子内部，其中已经通过瓶子接收装置将瓶子相对于外部空间密封。通过这种方式，仅在瓶子内部形成产生等离子体的微波作用，于是通过这种方式仅进行内部涂料。
特别地，如果瓶子足够稳定，仅抽空其内部空间，然后通过气体喷枪再填充生产气体是可能的。在瓶子外部的反应器室中呈现的高气体密度阻止辐射的微波在这个区域产生等离子体。因此，只在瓶子的内部产生等离子体，这同样地导致瓶子的内部涂料或内部处理。如果通道21通过接收装置仅和瓶子的开口相通，图1中示出的反应器设计成以这种模式操作。
举例来说，用于产生等离子体的微波可以通过可透微波的窗口30导入。这就允许将微波发生器安置在反应器的外部并且因此该微波发生器不必由反应器携带，这就相当地简化了CVD涂料装置的设计。
图2表示图1示出的反应器室的A-A向剖面的平面图。如图2可见，两部件5和7包围横截面呈圆形的反应器室9。
而且，这两个部件通过总的标为34和32的两个导向件可移动地彼此连接，导向件34和32分别包括和部件7牢固连接并导入滑块38中的销子36，于是部件7能沿着销子的纵轴相对于部件5运动。而且，导轨40引导滑块38，于是，部件7在通过相对于销子36的纵轴的垂直运动中也能相对于部件5移动。因此，这样的导向允许反应室彼此产生相对运动并经过对方。在这种情况下由机械控制凸轮15经由打开和关闭装置传递该运动。
在图2中示出的控制凸轮部件由这种方式实现，使得在反应器和与其相连的传送装置沿箭头指示的方向运动的情形下，部件7移离部件5，于是反应器室打开。
参照图3A-3D详细说明了导入和移出工件的操作。在这个例子中，反应器同样地用于涂中空塑料物体，特别是塑料瓶。图3A表示导入的第一阶段，此时反应器室已经打开并且用围绕轴44旋转的分配轮42将瓶子11传送进入反应室。然后将瓶子11插入到接收装置19中。为了能将瓶子插入到接收装置中，在处理过程的这一阶段气体喷枪23已经从反应器室中拔出。
在已经将瓶子插入到瓶子接收装置19之后，如图3B所示，将气体喷枪移动进入待涂料的瓶子11的内部。
在插入瓶子11之后，如图3C所示，首先通过控制凸轮15沿着反应器的部件5移出反应器的部件7，并且将其推进到反应器室开口的前面。
最后，如图3D所示，通过控制凸轮15的第二次运动将反应器的部件7移动到部件5上，于是反应器室9的开口关闭，然后通过和通道21相连的泵装置将反应器和/或瓶子的内部抽空。然后，通过气体喷枪射入生产气体。通过窗口30将微波射入反应器室中，于是，生产气体形成等离子体并且其反应产物涂在邻近的壁上。在这个例子中，生产气体仅被射入瓶子内部，导致涂瓶子的内部，例如作为一个扩散阻挡层。
在完成涂料之后，以相反的次序执行上面描述的步骤，可以再把瓶子移开。

Claims (26)

1.一种工件化学气相沉积处理装置，包括传送装置和至少一个固定到传送装置的反应器，其中该处理装置具有至少一个机械控制凸轮，和反应器具有由至少一个控制凸轮驱动的打开和关闭装置。
2.如权利要求1所述的装置，其特征在于通过移动通过控制凸轮的反应器致动反应器的打开和关闭装置。
3.如权利要求1或2所述的装置，其特征在于所述的反应器包括第一部件和第二部件，这两部件包围反应器室。
4.如权利要求3所述的装置，其特征在于所述的第一部件和传送装置相连并且所述的第二部件和打开和关闭装置相连。
5.如权利要求3或4所述的装置，其特征在于所述的控制凸轮以这种方式设置，即首先在打开的过程中，所述的打开和关闭装置在一个第一运动中将第二部件从第一部件中移开，并且随后在与第一运动完全垂直的第二运动中移动它经过第一部件。
6.如权利要求3、4或5所述的装置，其特征在于该装置包括在第一和第二部件之间的平坦的密封表面。
7.如权利要求1至6所述的装置，其特征在于所述的传送装置包括转动装置。
8.如权利要求1至7之一所述的装置，其特征在于所述的传送装置包括直线运动装置。
9.如权利要求1至8之一所述的装置，其特征在于所述的开关装置包括凸轮辊。
10.如权利要求1至9之一所述的装置，其特征在于所述的反应器具有可以由可透过电磁波，特别是微波的窗口。
11.如权利要求1至10之一所述的装置，其特征在于所述的反应器具有抽空装置。
12.如权利要求1至11之一所述的装置，其特征在于还包括充入生产气体的装置。
13.如权利要求1至12之一所述的装置，其特征在于所述的充入生产气体的装置包括气体喷枪。
14.如权利要求1至13之一所述的装置，其特征在于所述的装置包括至少一个分配轮。
15.一种在和传送装置相连的反应器中对工件进行CVD处理的方法，包括下列步骤：
将工件插入反应器中，
至少将反应器室的部分区域抽空，
导入生产气体，
产生等离子体，
移出工件，
该方法还包括下列步骤：
通过与反应器相连的装置依靠机械控制凸轮的运动打开和/或关闭反应器。
16.如权利要求15所述的方法，其特征在于所述的产生离子体的步骤包括发射电磁波的步骤。
17.如权利要求16所述的方法，其特征在于所述的发送电磁波的步骤包括发射脉冲电磁波的步骤。
18.如权利要求16或17所述的方法，其特征在于所述的发射电磁波的步骤包括发射微波的步骤。
19.如权利要求15至18之一所述的方法，其特征在于所述的反应器至少包括两个部件，其中关闭和/或打开反应器的步骤包括移动该两个部件使它们互相通过另一个并且位于另一个的上方。
20.如权利要求15至19之一所述的方法，其特征在于所述的插入工件的步骤包括使用分配轮导入工件的步骤。
21.如权利要求15至20之一所述的方法，其特征在于所述的移出工件的步骤包括使用分配轮移出工件的步骤。
22.如权利要求15至21之一所述的方法，其特征在于该工件包括中空物体。
23.如权利要求22所述的方法，其特征在于该工件包括瓶子。
24.如权利要求22或23所述的方法，其特征在于所述的抽空至少反应器室部件的步骤包括抽空由中空物体包围的空间的步骤。
25.  如权利要求22、23或24所述的方法，其特征在于所述的导入生产气体的步骤包括将生产气体导入到由中空物体包围的空间内的步骤。
26.如权利要求22至25之一所述的方法，其特征在于所述的产生等离子体的步骤包括在由中空物体包围的空间内产生等离子体的步骤。
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US20030219547A1 (en) 2003-11-27
DE50303336D1 (de) 2006-06-22

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