JPS57121246A - Semiconductor treating device - Google Patents
Semiconductor treating deviceInfo
- Publication number
- JPS57121246A JPS57121246A JP638281A JP638281A JPS57121246A JP S57121246 A JPS57121246 A JP S57121246A JP 638281 A JP638281 A JP 638281A JP 638281 A JP638281 A JP 638281A JP S57121246 A JPS57121246 A JP S57121246A
- Authority
- JP
- Japan
- Prior art keywords
- lid
- semiconductor
- furnace
- feeding
- feeding inlet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
PURPOSE:To make automation of opening and closing of a lid possible in addition to improvement on space factor of a feeding inlet by a method wherein a movable lid of a furnace for treatment on a semiconductor is provided so that it may be opened and closed along the direction which traverses the feeding for the semiconductor. CONSTITUTION:A circular movable lid 14 which opens and closes a feeding inlet 12 of a process tube 10 in a semiconductor treating furnace such as a low-pressure diffusion furnace and a low-pressure CVD furnace or the like is opened and closed along C direction in consequence with a movement of a cam plate 24 by a lid activating mechanism 18 consisting of a lid supporter 20 which supprots it, a guide rail 22 through which the supporter 20 is slid, and the cam plate 24 which guides the supporter 20 along the direction approximately traverse to the feeding direction of the product into a feeding inlet 12. By this method, there is no necessity for a large space in front of the feeding inlet 12 and regardless of large adhering force against a flange 16, the movable lid can be opened and colosed with a comparatively small force.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP638281A JPS57121246A (en) | 1981-01-21 | 1981-01-21 | Semiconductor treating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP638281A JPS57121246A (en) | 1981-01-21 | 1981-01-21 | Semiconductor treating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57121246A true JPS57121246A (en) | 1982-07-28 |
Family
ID=11636827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP638281A Pending JPS57121246A (en) | 1981-01-21 | 1981-01-21 | Semiconductor treating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57121246A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587820A (en) * | 1981-07-07 | 1983-01-17 | Toshiba Corp | Open-close device for tube inlet in diffusion reactor |
JPS61267805A (en) * | 1985-05-23 | 1986-11-27 | Teru Saamuko Kk | Shutter device |
EP1367145A1 (en) * | 2002-05-24 | 2003-12-03 | Schott Glas | CVD apparatus |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5295968A (en) * | 1976-02-09 | 1977-08-12 | Hitachi Ltd | Diffusion furnace with automatic shutter |
JPS5565432A (en) * | 1978-11-13 | 1980-05-16 | Hitachi Ltd | Sealed-type vacuum vessel |
-
1981
- 1981-01-21 JP JP638281A patent/JPS57121246A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5295968A (en) * | 1976-02-09 | 1977-08-12 | Hitachi Ltd | Diffusion furnace with automatic shutter |
JPS5565432A (en) * | 1978-11-13 | 1980-05-16 | Hitachi Ltd | Sealed-type vacuum vessel |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS587820A (en) * | 1981-07-07 | 1983-01-17 | Toshiba Corp | Open-close device for tube inlet in diffusion reactor |
JPH0154852B2 (en) * | 1981-07-07 | 1989-11-21 | Tokyo Shibaura Electric Co | |
JPS61267805A (en) * | 1985-05-23 | 1986-11-27 | Teru Saamuko Kk | Shutter device |
EP1367145A1 (en) * | 2002-05-24 | 2003-12-03 | Schott Glas | CVD apparatus |
JP2004003026A (en) * | 2002-05-24 | 2004-01-08 | Carl-Zeiss-Stiftung | Chemical vapor deposition treatment system |
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