CN1571177A - Structure of LED and method for manufacturing same - Google Patents
Structure of LED and method for manufacturing same Download PDFInfo
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- CN1571177A CN1571177A CNA031503322A CN03150332A CN1571177A CN 1571177 A CN1571177 A CN 1571177A CN A031503322 A CNA031503322 A CN A031503322A CN 03150332 A CN03150332 A CN 03150332A CN 1571177 A CN1571177 A CN 1571177A
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Abstract
The invention provides a LED structure, at least including: a substrate, a mixed layer, a first type semiconductor layer and a second type semiconductor layer, where a mixed layer at least has a roughening layer to diffuse incident beams and the roughening layer is a layer of silicon nitride material or film with AlInGaN quantum point. In addition, the invention also provides a LED manufacturing method, growing a mixed layer with at least a roughening layer in the extending course of LED module to make the mixed layer with the function of dispersing light beams.
Description
Technical field
(Light-Emitting Diode, manufacturing technology LED) particularly can improve the technology of the luminous efficiency of light-emitting diode thus to the present invention relates to a kind of light-emitting diode.
The background skill
Generally, the employed semi-conductive refractive index of light-emitting diode (refraction coefficient is 2.3) is greater than the refractive index (refraction coefficient is 1) of air, so the light major part that causes the active layer (being also referred to as luminescent layer) in the light-emitting diode to be produced is all got back to semiconductor inside by the interface total reflection between semiconductor and air, the light of total reflection is then absorbed by the active layer of inside, electrode and substrate.Therefore, existing light-emitting diode generally has the shortcoming of lower luminous efficiency.
In order to improve the luminous efficiency of light-emitting diode, confirm after deliberation at present, if semi-conductive surface is given alligatoring, after can making the spontaneous photosphere of light come out through the interface of alligatoring, produce scattering phenomenon, thereby change the path of original incident light, after passing through total reflection again, the probability that light is gone out just can obviously increase, and this correlation technique is in document IEEE Transcations on Electron Devices, 47 (7), 1492, disclose in 2000, and the document points out light-emitting diode after alligatoring that its external luminous efficiency can obviously increase to 40%.
Prior art such as United States Patent (USP) 5040044,5429954,5898192 etc. are to reach the purpose of alligatoring with etching mode in epitaxial surface, promptly utilize chemical method for etching to come the surface of alligatoring luminescence component, to reach the effect that increases luminous efficiency.Yet, above-mentioned prior art present stage can only be applied to the material of red-light LED, can not be applicable on the nitride material that can produce blue light, green glow that its reason is that the materials processing characteristic of red-light LED is simple, and nitride material has due to the very strong acid and alkali-resistance characteristic.Though the dry-etching method can overcome the problem of Wet-type etching, cause the damage of epitaxial loayer easily, cause the resistance value of semiconductor layer to raise.In addition, semiconductor layer is a monocrystal thin films, if directly to its alligatoring, then may destroy inner active layer, light-emitting area just thereby reduce also may destroy outside transparency electrode simultaneously, and cause the discontinuous of transparency electrode, so that electric current is disperseed to impact, all situations will cause whole luminous efficiency to reduce.
As from the foregoing, the scope of application of prior art is very narrow, and the effect that can't effectively utilize coarsening technique and brought, and may cause the luminous efficiency of light-emitting diode to reduce, thereby slackens the effect of alligatoring.Therefore, the industry applications of prior art is not high, and still remains to be broken through.
Summary of the invention
The object of the present invention is to provide a kind of light emitting diode construction and manufacture method thereof, solving the problem of the effect that prior art can't effectively utilize coarsening technique and brought, and further be widely used on the light-emitting diode of various materials.
For achieving the above object, light emitting diode construction of the present invention comprises at least: a substrate; One mixed layer, this mixed layer is positioned at the top of this substrate, has the light that a roughened layer is injected in order to diffusion at least; One first kenel semiconductor layer, it is positioned at the top of mixed layer; And one second kenel semiconductor layer, it is positioned at the top of the first kenel semiconductor layer.In addition, the present invention also provides a kind of method of making this light emitting diode construction.
For making those skilled in the art understand purpose of the present invention, feature and effect, now by following specific embodiment, and conjunction with figs., the present invention is illustrated.
Description of drawings
Fig. 1 is the profile of a specific embodiment of light emitting diode construction of the present invention.
Fig. 2 is the profile of another specific embodiment of light emitting diode construction of the present invention.
Among the figure
100 substrates, 102 resilient coatings, 104 gallium nitride layers
106 roughened layers, 108 first kenel semiconductor layers
110 active layers, 112 second kenel semiconductor layers
114 first electrodes, 116 second electrodes, 200 substrates
202 resilient coatings, 204 gallium nitride (GaN) layer
206 roughened layers, 208 first kenel semiconductor layers
210 active layers, 212 second kenel semiconductor layers
214 first electrodes, 216 second electrodes
Embodiment
Spirit of the present invention, it is the mixed layer of in the epitaxial process of light-emitting diode component, growing up, this mixed layer has the material that one deck can be injected light in order to diffusion at least, that is roughened layer, thereby make mixed layer have the function of the light scatter of making, the generation of roughened layer then can be passed through following dual mode: the first, and utilize the control of growth temperature and atmosphere and allow a boundary layer (as: SiN, AlN etc.) have fine hole; The second, form a film by the mode of implanting quantum dot.
Fig. 1 is the profile of the specific embodiment of one of light emitting diode construction of the present invention.Each layer is to utilize the technology of organic metal vapour phase epitaxy method (MOCVD) to deposit among Fig. 1.The manufacture method that forms the light emitting diode construction of Fig. 1 comprises following steps:
At first, provide a substrate 100, the material of substrate 100 can be one of them of sapphire, carborundum, silicon, GaAs, lithium metaaluminate, lithium gallium oxide and aluminium nitride; Then, be the resilient coating 102 of the gallium nitride material of 20～50nm in 500～600 ℃ of layer thicknesses of growing up down; Be the gallium nitride layer 104 of 1～2 μ m and doping Si in 1000～1200 ℃ of layer thicknesses of growing up down again, and then the layer thickness of growing up is the roughened layer 106 of 1～100nm, wherein the material of roughened layer 106 contains a kind of material that is selected from the group that silicon nitride, aluminium nitride and titanium nitride form at least, so gallium nitride layer 104 just forms a mixed layer with roughened layer 106; After roughened layer forms, grow up one first kenel semiconductor layer 108 again on mixed layer, the first kenel semiconductor layer 108 is that a layer thickness is the gallium nitride layer of 1～2 μ m and doping Si, so the first kenel semiconductor layer 108 is n type gallium nitride semiconductor layers; Subsequently, reduce temperature to 700～900 ℃, to grow up an active layer 110 on the first kenel semiconductor layer 108, active layer 110 can be following any structure: p-n and connects face, two heterojunction (DH), individual layer quantum well (SQW) and InGaN/GaN multi-layer quantum well (MQW); And then elevated temperature to 1000～1200 ℃, to grow up one second kenel semiconductor layer 112 on active layer 110, the second kenel semiconductor layer 112 is that a layer thickness is the gallium nitride layer of 0.1～0.2 μ m and doped with Mg, so the second kenel semiconductor layer 112 is p type gallium nitride semiconductor layers, LED epitaxial slice so just completes.At last, etching second kenel semiconductor layer 112 and active layer 110 are to expose the part surface of the first kenel semiconductor layer 108; Again the Ti/Al metal is made one first electrode 114 on 108 exposed portions surfaces of the first kenel semiconductor layer, therefore first electrode 114 is a n type electrode; The Ni/Au metal is made one second electrode 116 on the surface of the second kenel semiconductor layer 112, therefore 116 at second electrode is a p type electrode.By implementing above step, can obtain light emitting diode construction as shown in Figure 1.
Roughened layer 106 in the foregoing description is except can directly utilizing organic metal vapour phase epitaxy method (MOCVD) deposits, also can pass through multilayer film vapour deposition method (as: E-gun multilayer film vapour deposition method etc.), chemical vapour deposition technique (chemical vapor deposition, CVD) or sputtering method modes such as (sputter) grow up.
Fig. 2 is the profile of another specific embodiment of light emitting diode construction of the present invention.
Each layer is to utilize the technology of organic metal vapour phase epitaxy method (MOCVD) to deposit equally among Fig. 2, and the manufacture method that forms the light emitting diode construction of Fig. 2 comprises following steps:
At first, provide a substrate 200, the material of substrate 200 can be sapphire, carborundum, silicon, GaAs, lithium metaaluminate, lithium gallium oxide and aluminium nitride one of them; Then, be the resilient coating 202 of the gallium nitride material of 1～100nm in 500～600 ℃ of layer thicknesses of growing up down; Be the gallium nitride layer 204 of 1～2 μ m and doping Si in 1000～1200 ℃ of layer thicknesses of growing up down again, the layer thickness of and then growing up is 1～100nm and has Al
uGa
(1-u-v)In
vThe roughened layer 206 of N quantum dot, wherein the scope of u, v parameter is: 0≤u, v＜1 and 0≤u+v＜1, so gallium nitride layer 204 just forms a mixed layer with roughened layer 206; After roughened layer 206 forms, grow up one first kenel semiconductor layer 208 again on mixed layer, the first kenel semiconductor layer 208 is that a layer thickness is the gallium nitride layer of 3 μ m and doping Si, so the first kenel semiconductor layer 208 is n type gallium nitride semiconductor layers; Subsequently, reduce temperature to 700～900 ℃, to grow up an active layer 210 on the first kenel semiconductor layer 208, active layer 210 can be following any structure: p-n and connects face, two heterojunction (DH), individual layer quantum well (SQW) and InGaN/GaN multi-layer quantum well (MQW); And then elevated temperature to 1000～1200 ℃, to grow up one second kenel semiconductor layer 212 on active layer 210, the second kenel semiconductor layer 212 is that a layer thickness is the gallium nitride layer of 0.1～0.2 μ m and doped with Mg, so the second kenel semiconductor layer 212 is p type gallium nitride semiconductor layers, the light-emitting diode epi-wafer so just completes.At last, etching second kenel semiconductor layer 212 and active layer 210 are to expose the part surface of the first kenel semiconductor layer 208; Again the Ti/Al metal is made one first electrode 214 on 208 exposed portions surfaces of the first kenel semiconductor layer, therefore first electrode 214 is a n type electrode; The Ni/Au metal is made in the surface of the second kenel semiconductor layer 212 and forms one second electrode 216, and therefore second electrode 216 is a p type electrode.By implementing above step, can obtain the light emitting diode construction shown in the 2nd figure.
By two above embodiment as can be known, the thickness of the mixed layer of growing up usually is more than or equal to 0.01 μ m, and the thickness of growth roughened layer 106,206 is greater than 1nm.In addition, because the present invention grows up a mixed layer to reach the purpose of alligatoring in the process of light-emitting diode component extension, after finishing, extension carries out follow-up roughening treatment again compared to prior art, can recognize that the present invention has simplified the processing procedure of alligatoring effectively, and have progressive and industry applications.
Claims (35)
1. light emitting diode construction comprises at least:
One substrate;
One mixed layer, it is positioned at the top of substrate, and this mixed layer has the light that a roughened layer is injected in order to diffusion at least;
One first kenel semiconductor layer, it is positioned at the top of mixed layer;
One second kenel semiconductor layer, it is positioned at the top of the first kenel semiconductor layer.
2. light emitting diode construction according to claim 1 further comprises: an active layer, it is between the first kenel semiconductor layer and the second kenel semiconductor layer.
3. light emitting diode construction according to claim 1 is characterized in that, the material of this substrate is selected from following any: sapphire, carborundum, silicon, GaAs, lithium metaaluminate, lithium gallium oxide and aluminium nitride.
4. light emitting diode construction according to claim 1 is characterized in that, the material of described roughened layer contains a kind of material that is selected from the group that silicon nitride, aluminium nitride and titanium nitride form at least.
5. light emitting diode construction according to claim 1 is characterized in that this roughened layer has Al
uGa
(1-u-v)In
vThe N quantum dot, and the scope of u, v parameter is 0≤u, v＜1 and 0≤u+v＜1.
6. light emitting diode construction according to claim 1 is characterized in that, this first kenel semiconductor layer is a n type gallium nitride semiconductor layers.
7. light emitting diode construction according to claim 1 is characterized in that, this second kenel semiconductor layer is a p type gallium nitride semiconductor layers.
8. light emitting diode construction according to claim 2 is characterized in that, this active layer is that following any structure: p-n connects face, two heterojunction (DH), individual layer quantum well (SQW) and multi-layer quantum well (MQW).
9. light emitting diode construction comprises at least:
One substrate;
One resilient coating, it is formed on this substrate;
One mixed layer, it is formed on the resilient coating, and this mixed layer has the light that a roughened layer is injected in order to diffusion at least;
One first kenel semiconductor layer, it is formed on this mixed layer;
One active layer, it is formed on this first kenel semiconductor layer;
One second kenel semiconductor layer, it is formed on this active layer.
10. light emitting diode construction according to claim 9 is characterized in that, the material of this substrate is selected from following any: sapphire, carborundum, silicon, GaAs, lithium metaaluminate, lithium gallium oxide and aluminium nitride.
11. light emitting diode construction according to claim 9 is characterized in that, the material of this resilient coating is a gallium nitride.
12. light emitting diode construction according to claim 9 is characterized in that, the material of this roughened layer contains a kind of material that is selected from the group that silicon nitride, aluminium nitride and titanium nitride form at least.
13. light emitting diode construction according to claim 9 is characterized in that, this roughened layer has Al
uGa
(1-u-v)In
vThe N quantum dot, and the scope of u, v parameter is 0≤u, v＜1, and 0≤u+v＜1.
14. light emitting diode construction according to claim 9 is characterized in that, this first kenel semiconductor layer is a n type gallium nitride semiconductor layers.
15. light emitting diode construction according to claim 9 is characterized in that, this second kenel semiconductor layer is a p type gallium nitride semiconductor layers.
16. light emitting diode construction according to claim 9 is characterized in that, this active layer is that following any structure: p-n connects face, two heterojunction (DH), individual layer quantum well (SQW) and multi-layer quantum well (MQW).
17. a manufacturing method for LED comprises the following steps:
(a) provide a substrate;
(b) on this substrate, form a resilient coating;
(c) on this resilient coating, form a mixed layer;
(d) on this mixed layer, form one first kenel semiconductor layer;
(e) on this first kenel semiconductor layer, form an active layer;
(f) on this active layer, form one second kenel semiconductor layer.
18. manufacturing method for LED according to claim 17 further comprises the following step:
(g) this second kenel semiconductor layer of etching and this active layer are to expose the part surface of the first kenel semiconductor layer;
(h) form one first electrode in this first kenel semiconductor layer institute exposed portions surface;
(i) form one second electrode in the surface of this second kenel semiconductor layer.
19. manufacturing method for LED according to claim 18 is characterized in that, this first electrode is a n type electrode.
20. manufacturing method for LED according to claim 18 is characterized in that, this second electrode is a p type electrode.
21. manufacturing method for LED according to claim 17 is characterized in that, the thickness of this mixed layer is more than or equal to 0.01 μ m.
22. manufacturing method for LED according to claim 17 is characterized in that, the thickness of this roughened layer is greater than 1nm.
23. manufacturing method for LED according to claim 17 is characterized in that, step (b) is that growth one layer thicknesses are the resilient coating of the gallium nitride material of 20 ~ 50nm under 500 ~ 600 ℃.
24. manufacturing method for LED according to claim 23 is characterized in that, step (c) comprises at least: in 1000 ~ 1200 ℃ of layer thicknesses of growing up down is the step of the roughened layer of 1 ~ 100nm.
25. manufacturing method for LED according to claim 24 is characterized in that, step (d) is that growth one layer thicknesses are the gallium nitride layer of 1 ~ 2 μ m and doping Si under 1000 ~ 1200 ℃.
26. manufacturing method for LED according to claim 25 is characterized in that, step (e) is in 700 ~ 900 ℃ of following growth active layers.
27. manufacturing method for LED according to claim 26 is characterized in that, step (f) is that growth one layer thicknesses are the gallium nitride layer of 0.1 ~ 0.2 μ m and doped with Mg under 1000 ~ 1200 ℃.
28. the manufacturing method for LED according to claim 17 is characterized in that, step (b) is that growth one layer thicknesses are the resilient coating of the gallium nitride material of 1 ~ 100nm under 500 ~ 600 ℃.
29. manufacturing method for LED according to claim 28 is characterized in that, step (c) comprises at least: be 1 ~ 100nm and have Al in 1000 ~ 1200 ℃ of layer thicknesses of growing up
uGa
(1-u-v)In
vThe step of the roughened layer of N quantum dot, wherein the scope of u, v parameter is 0≤u, v＜1 and 0≤u+v＜1.
30. manufacturing method for LED according to claim 29 is characterized in that, step (d) is to be the gallium nitride layer of 1 ~ 2 μ m and doping Si in 1000 ~ 1200 ℃ of layer thicknesses of growing up.
31. manufacturing method for LED according to claim 30 is characterized in that, step (e) is in 700 ~ 900 ℃ of described active layers of growing up down.
32. manufacturing method for LED according to claim 31 is characterized in that, step (f) is to be the gallium nitride layer of 0.1 ~ 0.2 μ m and doped with Mg in 1000 ~ 1200 ℃ of layer thicknesses of growing up.
33., it is characterized in that the growth of roughened layer can utilize following any mode according to claim 24 or 29 described manufacturing method for LED: multilayer film vapour deposition method, chemical vapour deposition technique (CVD), sputtering method.
34. manufacturing method for LED according to claim 33 is characterized in that, the multilayer film vapour deposition method is an E-gun multilayer film vapour deposition method.
35. manufacturing method for LED according to claim 33 is characterized in that, chemical vapour deposition technique is organic metal vapour phase epitaxy method (MOCVD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031503322A CN1571177A (en) | 2003-07-24 | 2003-07-24 | Structure of LED and method for manufacturing same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031503322A CN1571177A (en) | 2003-07-24 | 2003-07-24 | Structure of LED and method for manufacturing same |
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| CN1571177A true CN1571177A (en) | 2005-01-26 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859844A (en) * | 2009-04-07 | 2010-10-13 | 裕星企业有限公司 | Light-emitting diode (LED) structure and manufacturing method thereof |
| CN102169929A (en) * | 2011-02-25 | 2011-08-31 | 聚灿光电科技(苏州)有限公司 | Manufacturing method of light-emitting diode (LED) with high light-extraction rate |
| CN102194944A (en) * | 2010-03-15 | 2011-09-21 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| CN103187498A (en) * | 2011-12-29 | 2013-07-03 | 比亚迪股份有限公司 | Semiconductor structure and forming method thereof |
-
2003
- 2003-07-24 CN CNA031503322A patent/CN1571177A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859844A (en) * | 2009-04-07 | 2010-10-13 | 裕星企业有限公司 | Light-emitting diode (LED) structure and manufacturing method thereof |
| CN102194944A (en) * | 2010-03-15 | 2011-09-21 | 展晶科技(深圳)有限公司 | Light emitting diode and manufacturing method thereof |
| CN102169929A (en) * | 2011-02-25 | 2011-08-31 | 聚灿光电科技(苏州)有限公司 | Manufacturing method of light-emitting diode (LED) with high light-extraction rate |
| CN103187498A (en) * | 2011-12-29 | 2013-07-03 | 比亚迪股份有限公司 | Semiconductor structure and forming method thereof |
| CN103187498B (en) * | 2011-12-29 | 2016-08-03 | 比亚迪股份有限公司 | A kind of semiconductor structure and forming method thereof |
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