CN1567571A - Process for making trench capacitor having geometric shape trench - Google Patents
Process for making trench capacitor having geometric shape trench Download PDFInfo
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- CN1567571A CN1567571A CN 03146374 CN03146374A CN1567571A CN 1567571 A CN1567571 A CN 1567571A CN 03146374 CN03146374 CN 03146374 CN 03146374 A CN03146374 A CN 03146374A CN 1567571 A CN1567571 A CN 1567571A
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Abstract
The invention provides a making course for channel type capacitor with geometrical shaped channel, including: providing a substrate with a pad structure; forming a first hard curtain on the pad structure; forming a patternized second hard curtain on the first one and exposing out a first mouth; forming a spacing layer on the side wall of the first mouth to compose a smaller second mouth; forming a third curtain layer to fill up the second mouth; eliminating the spacing layer, and etching the first hard curtain layer to expose a third mouth, where the first hard curtain layer has a salient of the first hard curtain layer in the third mouth; and etching the first hard curtain layer, the salient, the pad structure and the substrate to form a geometrical shaped channel with a middle salient in the substrate.
Description
Technical field
The invention relates to the method for the trench capacitor of making semiconductor integrated circuit, particularly relevant for a kind of manufacturing method thereof with groove-shaped electric capacity of geometry groove.
Background technology
The development of integrated circuits technology is maked rapid progress, its development trend is toward powerful, size is dwindled with the direction that speeds up and is advanced, and the manufacturing technology of DRAM (Dynamic Random Access Memory) (DRAM) also is so, especially the most important especially key of the increase of its memory capacity.
Most now DRAM unit is made of capacitor of a transistor AND gate.Along with manufacture of semiconductor develops with the direction that improves component density towards dwindling the semiconductor subassembly size, DRAM memory capacity also is increased to more than 512 megabits, so the area of base of memory cell must constantly reduce and makes integrated circuit can hold a large amount of memory cell and improve density in the internal memory.Require under the more and more higher situation in the assembly integration, memory cell and transistorized size need significantly be dwindled, and it is higher just may to produce memory capacity, and processing speed is DRAM faster.Yet the design of traditional stacking-type electric capacity can occupy the area of too many chip surface and can't meet the demand.
Utilize the process technique of three-dimensional, can reduce the area of transistor AND gate capacitor shared cloth on the semiconductor-based end in large quantities, therefore the three-dimensional technology begins to be applied on the processing procedure of DRAM, for example groove-shaped capacitor, account for the sizable area of cloth semiconductor surface with respect to classic flat-plate formula transistor, can't satisfy the demand of Present Attitude productive setization, therefore groove-shaped capacitor can significantly improve the shortcoming of known semiconductor memory cell, becomes at present and the following main trend of making semiconductor memory cell.
Yet, in size constantly under the situation of granular, groove in the DRAM (Dynamic Random Access Memory) stores node capacitance (trench storage node capacitance) and also needs along with managing to increase storage capacitors to keep the good operating characteristics of internal memory, and the surface area that therefore must promote the memory cell channel capacitor is to store sufficient electric charge.Though groove-shaped electric capacity can because the groove-shaped electric capacity of high-aspect-ratio has its restriction on processing procedure, cause increasable gash depth to still have certain qualification by increasing the surface area that gash depth promotes electric capacity.
The method that has been widely used at present the storage capacitors that increases DRAM (Dynamic Random Access Memory) is for increasing the width of channel bottom, similarly be for example to form a bottle type channel capacitor (bottleshaped trench capacitor) that can improve surface area, as shown in Figure 1a, be the initial step that shows the manufacture method of a known doleiform groove.At first, on a silicon base 10, form a patterning bed course (padlayer) 12, be etch mask with this patterning bed course 12 then, utilize the dry ecthing mode in this silicon base 10, to form a groove 14, and this groove 14 has a top peripheral part 16 and a bottom peripheral part 18, and its opening microspur is 13.
Then, shown in Fig. 1 b, then deposit a photoresist layer 22 in this groove 14 of part and cover bottom peripheral part 18 of this groove 14.Afterwards, compliance deposits a compound crystal silicon sacrifice layer 20 on these groove 14 top peripheral part 16.Then, shown in Fig. 1 c, remove the compound crystal silicon sacrifice layer 20 that is positioned at this bed course 12 and part photoresist layer 22 tops in the anisotropic etching mode.So, promptly form compound crystal silicon sacrifice layer sidewall 24 on the top of groove 14 peripheral part 16.
At last; shown in Fig. 1 d; carry out a wet etching processing procedure (also claiming wet bottle etch process); with ammoniacal liquor or dilute hydrofluoric acid solution (dilute HF solution) isotropic etching not by the silicon base 10 of groove 14 downsides of compound crystal silicon sacrifice layer 20 protections; and the bottle shaped portion 24 of formation groove 14, and these bottle shaped portion 24 its microspurs 15 are greater than the opening microspur 13 of this groove 14.A yet above-mentioned processing procedure palpus step complexity, need to make a bottle type groove again to divide other processing procedure to form deep trench earlier, because etch process easily forms the groove of taper, therefore increase the degree of difficulty on the processing procedure, and because the doleiform groove is when processing procedure, the shape of wayward groove bottom and the width of doleiform groove cause the unsteadiness of processing procedure and the interference on the geometry, increase the degree of difficulty of processing procedure.
Therefore, under the prerequisite that does not increase gash depth and trench bottom width, develop and a kind ofly have that to increase the capacitance meter area be a important topic on the present DRAM (Dynamic Random Access Memory) manufacturing technology with the groove-shaped electric capacity that promotes storage capacitors.
Summary of the invention
The object of the present invention is to provide a kind of processing procedure with groove-shaped electric capacity of geometry groove, be to utilize the processing procedure mode of plural curtain layer of hard hood to change the groove shape of groove-shaped electric capacity, by groove with geometry to increase the surface area of groove-shaped electric capacity effectively, do not increase under the prerequisite of gash depth in the hope of reaching in the component height aggregationization, the ability that promotes storage capacitors is to keep the good operating characteristics of internal memory.
In addition, the invention provides a kind of processing procedure that under the situation that need not enlarge trench bottom width, can increase the groove-shaped electric capacity of electric capacity storage.
For obtaining above-mentioned purpose, the processing procedure with groove-shaped electric capacity of geometry groove of the present invention comprises the following steps: to provide a substrate at least; Form a cushion layer structure in this substrate surface; Form one first curtain layer of hard hood on this cushion layer structure; Second curtain layer of hard hood that forms a patterning is on this first curtain layer of hard hood, and this first curtain layer of hard hood surface of exposed portions serve is to constitute one first opening; Form a wall in above-mentioned first opening sidewalls to constitute second a less opening; Form one the 3rd curtain layer of hard hood to fill up this second opening; Remove this wall, and with this second curtain layer of hard hood and the 3rd curtain layer of hard hood as this first curtain layer of hard hood of etch mask etching, form the 3rd opening of a tool one first curtain layer of hard hood ledge; And this first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, with the geometry groove that forms ledge in the middle of the tool one in this substrate.
According to the processing procedure with groove-shaped electric capacity of geometry groove of the present invention, wherein this first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, the step of geometry groove in this substrate of ledge is to comprise in the middle of the tool one to form: this first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, until removing this first curtain layer of hard hood ledge fully, on substrate, to form an annular recess; And this annular recess of being constituted of this substrate of etching and this cushion layer structure that exposes, with the geometry groove that forms ledge in the middle of the tool one in this substrate.
According to the processing procedure with groove-shaped electric capacity of geometry groove of the present invention, wherein remove with etching mode this wall of part with this first curtain layer of hard hood surface of exposing this second curtain layer of hard hood surface and part with the step that constitutes this second opening in, the width of this second opening is to be inversely proportional to this space layer that forms.
According to the processing procedure with groove-shaped electric capacity of geometry groove of the present invention, wherein the width of this centre ledge of this geometry groove is to be directly proportional with the width of this second opening.
Processing procedure with groove-shaped electric capacity of geometry groove of the present invention can also another way show, and comprises the following steps: to provide a substrate at least; Form a cushion layer structure in this substrate surface, this cushion layer structure is made of a pad oxide and a pad silicon nitride layer in regular turn; Form one first curtain layer of hard hood on this cushion layer structure; Second curtain layer of hard hood that forms a patterning is on this first curtain layer of hard hood, and this first curtain layer of hard hood surface of exposed portions serve is to constitute one first opening; Form a wall in above-mentioned first opening sidewalls to constitute second a less opening; Form one the 3rd curtain layer of hard hood in this first curtain layer of hard hood surface of exposing to fill up this second opening; The 3rd curtain layer of hard hood is carried out a planarization processing procedure be formed at the 3rd outer curtain layer of hard hood of this second opening with removal; Remove this wall, and with this second curtain layer of hard hood and the 3rd curtain layer of hard hood as this first curtain layer of hard hood of etch mask etching, form the 3rd opening of a tool one first curtain layer of hard hood ledge; Remove this second curtain layer of hard hood and the 3rd curtain layer of hard hood; This first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate are until removing this first curtain layer of hard hood ledge fully, to form an annular recess on substrate; And this annular recess of being constituted of this substrate of etching, with the geometry groove that forms ledge in the middle of the tool one in this substrate.
According to the processing procedure with groove-shaped electric capacity of geometry groove of the present invention, wherein the geometry groove of ledge more comprises forming a buried regions battery lead plate in the part aforesaid substrate that constitutes above-mentioned geometry groove after the step of this substrate in the middle of formation one tool one; And form ring (collar) insulating barrier and at least the conductive layer of one deck in above-mentioned geometry groove.
Description of drawings
Fig. 1 a to Fig. 1 d is section of structure, is the manufacturing process that illustrates the known groove-shaped electric capacity of ampuliform;
Fig. 2 a to Fig. 2 k is section of structure, is the manufacturing process that illustrates according to the groove-shaped electric capacity with geometry groove of a preferred embodiment of the present invention.
Symbol description:
The 10-silicon base
12-patterning bed course
13-opening microspur
The 14-groove
15-channel bottom microspur
16-top peripheral part
18-bottom peripheral part
20-compound crystal silicon sacrifice layer
The 22-photoresist layer
The 24-bottle shaped portion
The 100-substrate
The 102-cushion layer structure
Ledge in the middle of the 106-
110-first curtain layer of hard hood
The 110a-first curtain layer of hard hood ledge
112-second curtain layer of hard hood
114-the 3rd curtain layer of hard hood
The photoresist layer of 120-caseization
The 124-wall
130-first opening
132-second opening
134-the 3rd opening
The 136-annular recess
138-geometry groove
140-buried regions battery lead plate
142-first conductive layer
144-second conductive layer
150-encircles insulating barrier
Embodiment
For above-mentioned purpose of the present invention, feature can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below:
Fig. 2 a to Fig. 2 j is the processing flow profile that illustrates according to the groove-shaped electric capacity with geometry groove of a preferred embodiment of the present invention.
At first, shown in Fig. 2 a, providing semiconductor substrate 100, for example is P type silicon base, N type silicon base or crystal silicon substrate of heap of stone.In narration of the present invention, " substrate " speech is to comprise established assembly and various the filming that covers on the wafer on the semiconductor crystal wafer, its top can form any required semiconductor subassembly, but herein for simplicity of illustration, only represents with smooth substrate.Form a cushion layer structure 102 on silicon base 100 surfaces, and this cushion layer structure 102, can for example be made of a pad oxide and a pad silicon nitride layer, be to form this pad oxide 102 earlier on the surface of substrate 100, forms this pad silicon nitride layer again on this pad oxide.This pad oxide wherein, can for example be silicon oxide layer, its thickness can be approximately 50-300 , and the formation method for example is to carry out thermal oxidation program (thermal oxidation) or form with aumospheric pressure cvd (APCVD), low-pressure chemical vapor deposition (LPCVD) mode under the temperature of 850-950 degree Celsius; This fills up silicon nitride layer, and its thickness can be approximately 1000-2000 , and the formation method is with SiCl under 750-800 ℃
2H
2And NH
3Mist carry out low-pressure chemical vapor deposition.
Then, shown in Fig. 2 b, form one first curtain layer of hard hood 110 and one second curtain layer of hard hood 112 in regular turn on this cushion layer structure, and on second curtain layer of hard hood, 112 surfaces coating one photoresist layer, and implement suitable micro-photographing process and define required photoresistance pattern 120.Wherein, the material of this first curtain layer of hard hood 110 can be boron-phosphorosilicate glass (BPSG), arsenic silex glass (AsSG), phosphorosilicate glass (PSG) or Pyrex (BSG), for example is Pyrex (BSG), and its formation method is with SiH
4, BF
3And B
2H
6Mist carry out the chemical vapour deposition (CVD) step, the thickness of formation is to can be 8000-15000 , and can for example be 13000 in this preferred embodiment; The material of this second curtain layer of hard hood 112 is the compound crystal silicons that can be compound crystal silicon (polysilicon) or mix, and the formation method can be for example for utilizing the Low Pressure Chemical Vapor Deposition (LPCVD) that mixes up synchronously to form, and its reacting gas is PH
3, SiH
4With N
2Or AsH
3, SiH
4With N
2Mist, reaction temperature is between 500 to 650 ℃, between the 1E21 atoms/cm, the thickness of formation is to can be 500-5000 to its concentration impurity ion, and can for example be 3000 in this preferred embodiment between 1E20.
Then, shown in Fig. 2 c, utilize patterned light blockage layer 120 to be used as etch mask, second curtain layer of hard hood 112 is implemented an anisotropic etching program, can for example be magnetic field enhanced active ion formula electric paste etching method (MERIE), electron cyclotron resonace electric paste etching method (ECR) or traditional active ion formula electric paste etching method (RIE), its electricity slurry reacting gas can for example be sulphur hexafluoride (SF
6), oxygen (O
2), chlorine (Cl
2) and the mist of hydrogen bromide (HBr), on design transfer to the second curtain layer of hard hood 112 with photoresist layer 120, and first curtain layer of hard hood, 110 surfaces of exposed portions serve, and form one first opening 130 that is positioned at second cover curtain layer 112 and first cover curtain layer 110 surface.And the width range of this first opening 130 is roughly the width range as the groove of groove-shaped electric capacity.Then, remove photoresist layer with suitable solution or dry-etching program again.
Then, shown in Fig. 2 d, compliance forms a wall 124 on this second curtain layer of hard hood 112 and this first opening 130, wherein this wall 124 is made of dielectric material, it can for example be a nitrogenous silicide, its generation type can be Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhance Chemical Vapor Deposition (PECVD), high density plasma enhanced chemical vapor deposition method (HDPCVD), atmospheric chemical vapor deposition (APCVD) or subatmospheric chemical vapour deposition technique (SACVD), for example for utilizing Low Pressure Chemical Vapor Deposition, with dichlorosilane (SiCl
2H
2) and ammonia (NH
3) form for reaction raw materials deposits.Then, shown in Fig. 2 e, this wall 124 of anisotropic etching, for example utilize reactive ion etching (reactive ion etching, RIE) program, removal is positioned at this second curtain layer of hard hood 112 and these first curtain layer of hard hood, 110 lip-deep walls 124 of part, and formation one is positioned at one second opening 132 on this wall 124 and first cover curtain layer, 110 surfaces.Above-mentioned steps is to be a self-aligned etching step.Wherein this wall 124 of etching part with the step of exposing this second opening 132 in, the width of this second opening 132 is that the thickness with this wall 124 that forms is inversely proportional to.
Then, shown in Fig. 2 f, form one the 3rd curtain layer of hard hood 114 in these first curtain layer of hard hood, 110 surfaces of exposing filling up this second breach 130, and the 3rd curtain layer of hard hood 114 carried out a planarization processing procedure be formed at the 3rd outer curtain layer of hard hood 114 of this second breach 130 with removal.Wherein, the 3rd curtain layer of hard hood 114 can be made of identical or different materials with this second curtain layer of hard hood 112, and the composition material of the 3rd curtain layer of hard hood 114 and this second curtain layer of hard hood 112 is different with the composition material of this wall 124 or this first curtain layer of hard hood.The 3rd curtain layer of hard hood 114 can for example be a compound crystal silicon, and its reacting gas is PH
3, SiH
4With N
2Or AsH
3, SiH
4With N
2Mist, reaction temperature is between 500 to 650 ℃; And above-mentioned planarization processing procedure can for example be formed at this second breach 130 the 3rd curtain layer of hard hood 114 outward for utilizing a chemical mechanical milling method to remove.Wherein the width of this centre ledge of this geometry groove is to be directly proportional with the width of this second opening.
Then, shown in Fig. 2 g, remove this wall 124 fully in a selective etch mode, to expose this first curtain layer of hard hood, 110 surfaces, the etching mode of wherein removing this wall 124 can be a wet etching, for example uses the phosphoric acid (phosphoric acid) through heating to carry out the etching as the silicon nitride of this wall 124.Then, shown in Fig. 2 h, with this second curtain layer of hard hood 112 and the 3rd curtain layer of hard hood 114 as etch mask, this first curtain layer of hard hood 110 is carried out etching, so that going up in these cushion layer structure 102 surfaces, this first curtain layer of hard hood 110 constitutes one the 3rd breach 134, and this first curtain layer of hard hood 110 has one first curtain layer of hard hood ledge 110a in the 3rd breach 134, and then remove this second curtain layer of hard hood 112 and the 3rd curtain layer of hard hood 114 fully with etching mode, for example with reactive ion etching (reactive ion etching, RIE) mode.
Then, shown in Fig. 2 i, this first curtain layer of hard hood 110 of etching, this first curtain layer of hard hood ledge 110a, this cushion layer structure 102 and this substrate 100 are until removing this first curtain layer of hard hood ledge 110a fully, to form an annular recess 136 in substrate 100.Owing to this first curtain layer of hard hood ledge 110a is positioned at the 3rd breach 134 to protrude from this cushion layer structure 102 surfaces, make this etching program except from its top, more can be by this first curtain layer of hard hood ledge 110a being carried out etching all around, the etch-rate that causes this first curtain layer of hard hood ledge 110a than the etch-rate of these first curtain layer of hard hood, 110 other parts come many soon, so when removing this first curtain layer of hard hood ledge 110a fully with etching, still have this first curtain layer of hard hood 110 to be positioned on this annular recess 136 this cushion layer structure outward.
Then, shown in Fig. 2 j, this annular recess 136 that this substrate 100 of etching is constituted, the geometry groove 138 that forms a tool one middle ledge 106 is in this substrate 100, different with above-mentioned steps is that the etching emphasis of this step is this annular recess 136 that substrate 100 is constituted.Wherein the mode of this annular recess 136 of being constituted of this substrate of etching can be an anisotropic etching, for example utilize reactive ion etching (reactive ion etching, RIE), and with this first curtain layer of hard hood 110 as sacrifice layer.When etching process, this first curtain layer of hard hood 110 need have a necessary thickness to keep its function as etch mask, can form a photoresist layer in case of necessity with as etched sacrifice layer on this first curtain layer of hard hood 110.In the present invention, the degree of depth of the height of this centre ledge 106 and this geometry groove 138 can be come modulation by changing the etching selectivity of first curtain layer of hard hood 110 with this substrate, and the degree of depth of this geometry groove 138 also can be come modulation by the thickness that changes as this first curtain layer of hard hood 110 of etch sacrificial layer.At last, shown in Fig. 2 k, form buried regions battery lead plate 140, ring insulating barrier 150, first conductive layer 142 and second conductive layer 144 in geometry groove 138 to constitute a dark flute capacitor.The method that wherein forms buried regions battery lead plate 140 can be utilized the silica glass of arsenic doped (ArsenicDoped Silicon Dioxide Glass; ASG) layer and tetraethoxysilane (TEOS) layer are formed in the geometry groove 138, drive in (drive in) then and in the interior buried regions battery lead plate 140 of this bottle type groove.
In sum, the present invention compares with known techniques, and of the present invention have a geometry groove The processing procedure of groove-shaped electric capacity have several advantages. At first, the present invention is the system of utilizing plural curtain layer of hard hood The journey mode to be changing the groove shape of groove-shaped electric capacity, do not increasing gash depth and trench bottom width In the situation, effectively increase surface area and the storage capacitors of groove-shaped electric capacity with the groove with geometry Ability, this practice has been avoided its processing procedure difficulty of known bottle type channel capacitor, wayward channel bottom bottle Shape structure and the easy problems such as interference that form on the geometry.
Secondly, in the situation about increasing for the capacity of asking DRAM, memory cell in the internal memory Area of base must constantly reduce to be made integrated circuit can hold a large amount of memory cell and improves density, therefore dynamically Random access memory is also sent out to put forward highdensity direction towards dwindling the semiconductor subassembly size on process design The exhibition, thus the groove width of electric capacity also with dwindle. Yet when groove width constantly reduces, processing procedure is stranded Difficulty also constantly improves. When the DRAM processing procedure reached 0.11 μ m, wanted with little this moment The fine and closely woven pattern that image etching procedure defines such as second opening 132 is very difficult. And it is of the present invention The processing procedure of the groove-shaped electric capacity with geometry groove, be to carry out with a self-aligned etching step Formation with geometry groove, even when the DRAM processing procedure reaches 0.11 μ m, Still can form at the channel bottom of groove-shaped electric capacity a ledge with the change trench geometry, and then increase It is long-pending to promote the ability of storage capacitors to add table.
Claims (26)
1. processing procedure with groove-shaped electric capacity of geometry groove comprises:
One substrate is provided;
Form a cushion layer structure in this substrate surface;
Form one first curtain layer of hard hood on this cushion layer structure;
Second curtain layer of hard hood that forms a patterning is on this first curtain layer of hard hood, and this first curtain layer of hard hood surface of exposed portions serve is to constitute one first opening;
Form a wall in above-mentioned first opening sidewalls to constitute second a less opening;
Form one the 3rd curtain layer of hard hood to fill up this second opening;
Remove this wall, and with this second curtain layer of hard hood and the 3rd curtain layer of hard hood as this first curtain layer of hard hood of etch mask etching, form the 3rd opening of a tool one first curtain layer of hard hood ledge;
Remove this second curtain layer of hard hood and the 3rd curtain layer of hard hood; And
This first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, with the geometry groove that forms ledge in the middle of the tool one in this substrate.
2. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein forming the 3rd curtain layer of hard hood in the step of this second opening, comprising that more the 3rd curtain layer of hard hood is carried out a planarization processing procedure is formed at the 3rd outer curtain layer of hard hood of this second opening with removal.
3. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 2, wherein this planarization processing procedure is to be a chemical mechanical milling method.
4. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein this first curtain layer of hard hood material is to be selected from the group that is made up of boron-phosphorosilicate glass (BPSG), arsenic silex glass (AsSG), phosphorosilicate glass (PSG) and Pyrex (BSG).
5. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein this second curtain layer of hard hood material is the compound crystal silicon for compound crystal silicon (poly silicon) or doping.
6. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, the material that wherein constitutes this second curtain layer of hard hood are identical with the material that constitutes the 3rd curtain layer of hard hood.
7. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein this wall is made of dielectric material.
8. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, the method that wherein forms this wall dielectric layer are to comprise Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhance Chemical Vapor Deposition (PECVD), high density plasma enhanced chemical vapor deposition method (HDPCVD), atmospheric chemical vapor deposition (APCVD) or subatmospheric chemical vapour deposition technique (SACVD).
9. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein forming this cushion layer structure is to comprise in the step of this substrate surface:
Form a pad oxide in this substrate surface; And
Form a pad silicon nitride layer in this pad oxide surface, wherein this pad oxide and this pad silicon nitride layer are to constitute this cushion layer structure.
10. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein this first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, the step of geometry groove in this substrate of ledge is to comprise in the middle of the tool one to form:
This first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate are until removing this first curtain layer of hard hood ledge fully, to form an annular recess in substrate; And
This annular recess that this substrate of etching is constituted and this cushion layer structure that exposes, with the geometry groove that forms ledge in the middle of the tool one in this substrate.
11. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 10, wherein in the step of this first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, when removing this first curtain layer of hard hood ledge fully, still have this first curtain layer of hard hood to be positioned on this outer cushion layer structure of this annular recess.
12. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein this wall of etching part with the step of exposing this second opening in, the width of this second opening is that the thickness with this wall that forms is inversely proportional to.
13. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 12, wherein the width of this centre ledge of this geometry groove is to be directly proportional with the width of this second opening.
14. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 1, wherein the geometry groove of ledge more comprises after the step of this substrate in the middle of formation one tool one:
Form a buried regions battery lead plate in the part aforesaid substrate that constitutes above-mentioned geometry groove; And
Form ring (collar) insulating barrier and at least the conductive layer of one deck in above-mentioned geometry groove.
15. the processing procedure with groove-shaped electric capacity of geometry groove comprises:
One substrate is provided;
Form a cushion layer structure in this substrate surface, this cushion layer structure is made of a pad oxide and a pad silicon nitride layer in regular turn;
Form one first curtain layer of hard hood on this cushion layer structure;
Second curtain layer of hard hood that forms a patterning is on this first curtain layer of hard hood, and this first curtain layer of hard hood surface of exposed portions serve is to constitute one first opening;
Form a wall in above-mentioned first opening sidewalls to constitute second a less opening;
Form one the 3rd curtain layer of hard hood in this first curtain layer of hard hood surface of exposing to fill up this second opening;
The 3rd curtain layer of hard hood is carried out a planarization processing procedure be formed at the 3rd outer curtain layer of hard hood of this second opening with removal;
Remove this wall, and with this second curtain layer of hard hood and the 3rd curtain layer of hard hood as this first curtain layer of hard hood of etch mask etching, form the 3rd opening of a tool one first curtain layer of hard hood ledge;
Remove this second curtain layer of hard hood and the 3rd curtain layer of hard hood;
This first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate are until removing this first curtain layer of hard hood ledge fully, to form an annular recess in substrate; And
This annular recess that this substrate of etching is constituted, with the geometry groove that forms ledge in the middle of the tool one in this substrate.
16. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein this planarization processing procedure is to be a chemical mechanical milling method.
17. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, this pad oxide that wherein constitutes this cushion layer structure is formed by thermal oxidation method.
18. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein this first curtain layer of hard hood material is to be selected from the group that is made up of boron-phosphorosilicate glass (BPSG), arsenic silex glass (AsSG), phosphorosilicate glass (PSG) and Pyrex (BSG).
19. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein this second curtain layer of hard hood material is the compound crystal silicon for compound crystal silicon (poly silicon) or doping.
20. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, the material that wherein constitutes this second curtain layer of hard hood are identical with the material that constitutes the 3rd curtain layer of hard hood.
21. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein this wall is made of dielectric material.
22. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, the method that wherein forms this wall dielectric layer are to comprise Low Pressure Chemical Vapor Deposition (LPCVD), Plasma Enhance Chemical Vapor Deposition (PECVD), high density plasma enhanced chemical vapor deposition method (HDPCVD), atmospheric chemical vapor deposition (APCVD) or subatmospheric chemical vapour deposition technique (SACVD).
23. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein in the step of this first curtain layer of hard hood of etching, this first curtain layer of hard hood ledge, this cushion layer structure and this substrate, when removing this first curtain layer of hard hood ledge fully, still have this first curtain layer of hard hood to be positioned on this outer cushion layer structure of this annular recess.
24. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein this wall of etching part with the step of exposing this second opening in, the width of this second opening is that the thickness with this wall that forms is inversely proportional to.
25. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 24, wherein the width of this centre ledge of this geometry groove is to be directly proportional with the width of this second opening.
26. the processing procedure with groove-shaped electric capacity of geometry groove according to claim 15, wherein the geometry groove of ledge more comprises after the step of this substrate in the middle of formation one tool one:
Form a buried regions battery lead plate in the part aforesaid substrate that constitutes above-mentioned geometry groove; And
Form ring (collar) insulating barrier and at least the conductive layer of one deck in above-mentioned geometry groove.
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|---|---|---|---|
| CNB031463746A CN1319153C (en) | 2003-07-10 | 2003-07-10 | Process for making trench capacitor having geometric shape trench |
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|---|---|---|---|
| CNB031463746A CN1319153C (en) | 2003-07-10 | 2003-07-10 | Process for making trench capacitor having geometric shape trench |
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| CN (1) | CN1319153C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270567A (en) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing capacitor |
| CN109300790A (en) * | 2017-07-24 | 2019-02-01 | 格芯公司 | With the contact etch stop layer for sacrificing polysilicon layer |
| CN111916452A (en) * | 2019-05-07 | 2020-11-10 | 力晶积成电子制造股份有限公司 | Memory structure and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4650544A (en) * | 1985-04-19 | 1987-03-17 | Advanced Micro Devices, Inc. | Shallow groove capacitor fabrication method |
| CN1048823C (en) * | 1997-05-12 | 2000-01-26 | 世界先进积体电路股份有限公司 | Method for producing capacitor by utilizing etching tech. |
| US6190955B1 (en) * | 1998-01-27 | 2001-02-20 | International Business Machines Corporation | Fabrication of trench capacitors using disposable hard mask |
| US6020230A (en) * | 1998-04-22 | 2000-02-01 | Texas Instruments-Acer Incorporated | Process to fabricate planarized deep-shallow trench isolation having upper and lower portions with oxidized semiconductor trench fill in the upper portion and semiconductor trench fill in the lower portion |
| CN1127137C (en) * | 1998-05-27 | 2003-11-05 | 世界先进积体电路股份有限公司 | Method for manufacturing capacitor structure of high-density DRAM |
-
2003
- 2003-07-10 CN CNB031463746A patent/CN1319153C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270567A (en) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing capacitor |
| CN109300790A (en) * | 2017-07-24 | 2019-02-01 | 格芯公司 | With the contact etch stop layer for sacrificing polysilicon layer |
| CN109300790B (en) * | 2017-07-24 | 2021-11-02 | 格芯(美国)集成电路科技有限公司 | Contact etch stop layer with sacrificial polysilicon layer |
| CN111916452A (en) * | 2019-05-07 | 2020-11-10 | 力晶积成电子制造股份有限公司 | Memory structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1319153C (en) | 2007-05-30 |
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