CN1561376A - Polishing composition - Google Patents
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- CN1561376A CN1561376A CN 02819416 CN02819416A CN1561376A CN 1561376 A CN1561376 A CN 1561376A CN 02819416 CN02819416 CN 02819416 CN 02819416 A CN02819416 A CN 02819416A CN 1561376 A CN1561376 A CN 1561376A
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Abstract
A polishing composition of abrasive grains, a phosphorus-containing inorganic acid or salt thereof and another inorganic acid or salt thereof contained in an aqueous medium is used for the polishing of magnetic disk substrates or the like.
Description
The cross reference of related application
The application is the application of submitting according to 35U.S.C. § 111 (a), require provisional application 60/317 according to 35U.S.C. § 119 (e) (1), the rights and interests of 962 the applying date, provisional application 60/317,962nd, the application of submitting September 10 calendar year 2001 according to 35U.S.C. § 111 (b).
Technical field
The present invention relates to be suitable for polishing the polishing composition of the magnetic disk substrate that uses in the storage unit of computer etc., more specifically, relate to the composition that is used to polish magnetic disk substrate, the magnetic disk surface that said composition can be polishing provides high precision to make that the level of floating is lower on this panel surface when magnetic head flies to change.
Background technology
Be used for the outside storage unit of computer or word processor, disk (storage hard disk) is widely used as the instrument that carries out zero access.The representative instance of this disk is the disk of following acquisition: the Al-alloy substrates is carried out electroless forming substrate with NiP, with the surface finish of this substrate and sequentially splash Cr-alloy undercoat, Co-alloy magnetic layer and carbon protective layer on this base material.
If there is the projection that highly surpasses the magnetic head floats level on the magnetic disk surface, then when with the magnetic head that flies at a high speed to change and above this panel surface, float simultaneously with specified altitude may with this projection collision, thereby cause damage.In addition, when having the projection that caused by polishing or cut on the magnetic disk substrate, this projection also appears on Cr-alloy undercoat and the Co-alloy magnetic layer, this moment these stacked lids, the flaw that generation is caused by cut, thus this magnetic disk surface does not have high-precision smooth surface.Therefore, must be accurately with this substrate polishing, to improve the precision of panel surface.
In order to polish magnetic disk substrate, advised many polishing compositions, these compositions can thoroughly be removed projection or projection is reduced to alap level, and are not easy to produce any cut.
JP-A-HEI 9-204657 discloses and has used by aluminum nitrate and anti-gelling agent are added the composition for preparing in the colloidal silica.JP-A-HEI 9-204658 discloses and has used by aluminum nitrate being added the composition for preparing in the pyrogenic silica.The disclosed every kind of composition of these publications all comprises the particle in small, broken bits as the lower silicon-dioxide of abrasive grain and hardness, makes easily to obtain the surface of good precision, although be difficult to obtain to be suitable for the polishing speed of actual production.
In addition, in JP-A-HEI 10-204416, advised using many kinds of oxygenants and Fe salt independently to quicken polishing speed.Yet, the actual production when putting into practice, so the polishing speed that obtains is still not enough.
The composition that requirement is used to polish the aluminium magnetic disk substrate that allows the high-density magnetic storage can make magnetic head with low-level unsteady high precision for panel surface provides.
Therefore, the purpose of this invention is to provide the composition that a kind of polishing can realize the magnetic disk substrate of high-density magnetic storage, wherein said composition can be magnetic disk substrate low surface roughness is provided, and does not have projection or the cut that causes because of polishing, and can the effective speed polishing of cost magnetic disk substrate.
Summary of the invention
Polishing composition of the present invention comprises following component:
Be contained in the abrasive grain in the water-bearing media, inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt.
And abrasive grain is at least a material that is selected from alumina, titanium oxide, silica and the zirconium white.
In addition, the mean particle size of abrasive grain is that 0.001-0.5 μ m and this abrasive grain are colloidal particles.
In addition, inorganic phosphor-contained acid is Phosphoric acid or phosphonic acid, and another kind of mineral acid is at least a acid that is selected from nitric acid, sulfuric acid, amido sulfuric acid and boric acid.
In addition, oxygenant is at least a compound that is selected from superoxide, perborate, persulphate or the nitrate, and superoxide is a hydrogen peroxide, and perborate is a Sodium peroxoborate.
In addition, the pH of polishing composition is 1-5.
In addition, abrasive grain content is 3-30 quality %, and the content of mineral acid or its salt is 0.1-8 quality %, and oxygenate content is 0.2-5 quality %.
In addition, polishing composition of the present invention is the composition that is used to polish magnetic disk substrate.
The invention still further relates to the magnetic disk substrate that is used to polish the polishing composition of magnetic disk substrate by aforementioned.
As mentioned above, polishing composition of the present invention comprises two or more specific organic acids or its salt, therefore dispersion state is better, and by with phosphorous organic acid or its salt as necessary component, the effect that increases the generation of polishing speed and the little cut of inhibition is promoted, therefore obtains the magnetic disk substrate with high precision panel surface.
Preferred forms of the present invention
The present inventor be to can having carried out sufficient research for glazed surface provides high-precision abrasive material, and it is desired when the magnetic head that flies to change with low speed that this high precision is the aluminium disk.As a result, the inventor has found to have the polishing composition of excellent polished aluminum disk performance, thereby produces the present invention.
Polishing composition of the present invention is characterised in that, contains abrasive grain, inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt in water-bearing media.
What be used for polishing composition of the present invention does not have special restriction as the contained abrasive grain of abrasive material.For example can use alumina, titanium oxide, silica, zirconium white etc., its crystal formation does not limit.For example alumina (being aluminum oxide) has α, γ, δ, η, θ, κ, χ and other crystal formation; Titanium oxide has rutile, anatase octahedrite, brookite and other crystal formation; Silica (being silicon oxide) comprises colloidal silica, pyrogenic silica, white carbon black and other form; And zirconium white has monoclinic form, cubic crystalline form and amorphous form.Preferred use any in these.The abrasive grain that is the colloidal particles form preferably suppresses to take place little cut.
The mean particle size of aforementioned abrasive grain is generally 0.001-0.5 μ m, preferred 0.001-0.2 μ m, more preferably 0.02-0.2 μ m, most preferably 0.03-0.2 μ m.The abrasive grain that is the colloidal particles form in addition, even more preferably.Herein, used mean particle size is the value of measuring by Microtrac UPA150 type (by Honeywell, Inc. makes) laser Doppler frequency analysis type particle size distribution analysis instrument.
Along with the granularity increase of abrasive grain, fine grain gelling and agglomeration are easier to be suppressed, but exists oarse-grained possibility to increase, thereby causes producing in polishing process cut.On the contrary, along with the granularity reduction of abrasive grain, the easier generation of aforementioned gelling and agglomeration, this also causes producing cut in polishing process.
The concentration of abrasive grain is lower than 3 quality % (hereinafter be abbreviated as " % ", in the time of except as otherwise noted), polishing speed significantly reduces in polishing composition of the present invention.Along with the concentration increase of abrasive grain, polishing speed increases, but when the concentration of abrasive grain surpassed 30%, not only can't see polishing speed increased, and gelling takes place easily, particularly when abrasive grain is colloidal particles.Consider cost efficiency, for practical application, be limited to 30% on this concentration.Therefore, the concentration of abrasive grain is preferably 3-30% in the polishing composition, more preferably 5-15%.
In polishing composition of the present invention, use inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt.This inorganic phosphor-contained acid must contain the phosphorus as the component of this compound, and preferably phosphoric acid or phosphonic acids.Inorganic phosphor-contained acid also comprises its derivative.Can use two or more inorganic phosphor-contained acid simultaneously.
Mixing the another kind of mineral acid that uses with inorganic phosphor-contained acid can be hydrochloric acid, sulfuric acid, chromic acid, carbonic acid, amido sulfuric acid, boric acid or other acid, but preferred nitric acid, sulfuric acid, amido sulfuric acid or boric acid.These acid also comprise its derivative.The salt of inorganic phosphor-contained acid and the salt of another kind of mineral acid can be the salt of Li, Be, Na, Mg, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Zr, Nb, Mo, Pd, Ag, Hf, Ta, W or other metal.These salt can obtain by the oxide compound of aforementioned metal or carbonate are for example dissociated in inorganic phosphor-contained acid or another kind of mineral acid.
In polishing composition of the present invention, the total content of inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt can be 0.1-8%, preferred 0.2-6%, more preferably 0.4-4%.When the content of mineral acid or its salt is lower than 0.1%, can't see the effect that suppresses little cut or increase polishing speed.This content surpasses at 8% o'clock, and pH significantly reduces, and therefore causes the infringement greatly to the polishing thing, thereby causes handling problems.The ratio of mixture of inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt preferably adds the 0.1-5 mole latter among the former to 1 mole.
If the latter is less than 0.1 mole, then the dispersiveness in the slurries worsens, and little cut increases.If the latter surpasses 5 moles, then pH reduces and the infringement of polishing thing is increased.
Polishing composition of the present invention comprises two or more specific organic acids or its salt, but by with phosphorous organic acid or its salt as necessary component, increase polishing speed and suppress the effect that little cut takes place and promoted.
In the present invention, use the effect mechanism behind of two or more specific organic acids or its salt still uncertain, but conjecture is because the cause that the dispersion state of polishing composition improves.
The preferably at least a compound that is selected from superoxide, perborate, persulphate or the nitrate of the oxygenant that contains in the polishing composition of the present invention, wherein representative example comprises: as the hydrogen peroxide of superoxide, as the Sodium peroxoborate of perborate, as the ammonium persulphate of persulphate with as the ammonium nitrate of nitrate.It should be noted that if aforementioned another kind of mineral acid or its salt have oxygenizement, then it also can be used as oxygenant, therefore can use this mineral acid or its salt separately.For example, can be with nitrate not only as the salt of another kind of acid but also as oxygenant.It should be noted, even when another kind of mineral acid or its salt have oxygenizement, also can add different oxygenants.
The example of oxidant in effect comprises to be increased polishing speed and reduces surfaceness.Although the mechanism of these effects it be unclear that, think on the NiP surface effect as etching reagent.
The content of oxygenant (being hydrogen peroxide) should be 0.2-5%, perhaps preferred 0.5-2%.If oxygenate content is lower than 0.2%, the effect that then increases polishing speed and reduction surfaceness is faint, if this content surpasses 5%, then its effect reaches capacity.
Also as under the situation of oxygenant, the content of this mineral acid or its salt becomes the content sum of the two at another kind of mineral acid or its salt, promptly as the content of another kind of mineral acid or its salt with as the content sum of oxygenant.Therefore, the content sum of inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt is preferably 0.3-13%, perhaps more preferably 0.7-8%.
In addition, when aforementioned composition contained also as the mineral acid of oxygenant or its salt, said composition also can comprise one or another kind of mineral acid or its salt that also uses to greatest extent, determined the upper limit of the content of the residual oxidizing agent that also uses then.For example, for phosphoric acid, nitrate (salt of another kind of mineral acid and also be oxygenant) and hydrogen peroxide, because all are other mineral acid, therefore can determine the content of nitrate, and hydrogen peroxide can regard that the oxygenant and its upper limit can be set at 5% as.In addition, be the mineral acid of oxygenant or its salt for example during nitrate when comprising not, in this nitrate was contained in as oxidant package, limit content was 5%, can determine to remain the amount of non-oxide mineral acid or its salt then.In both cases, the content summation of inorganic phosphor-contained acid or its salt, another kind of mineral acid or its salt and oxygenant is preferably 0.3-13%, more preferably 0.7-8%.
In polishing composition of the present invention, the pH scope is preferably 1-5, more preferably 2-4, even more preferably 2-3.Make liquid be acidity and can quicken the oxidation of Ni and increase polishing speed, but, equipment corrosion and other problem then take place, so pH most preferably is 2-3 if pH is too low.The adjusting of pH can use Sodium peroxoborate to carry out.
It should be noted the concentration the when concentration of various aforementioned component is the polishing magnetic disk substrate.When transportation polishing composition after production, advantageously prepare the composition that concentration is higher than above-mentioned concentration, and before using, it is diluted to aforementioned concentration.
Magnetic disk substrate polishing composition of the present invention also can comprise tensio-active agent and sanitas except that said components.Yet, close attention be that their type and content must not cause taking place gelling.
Anti-gelling agent can be added in the polishing composition to suppress gelling.For spendable anti-gelling agent, preferably use at least a compound that is selected from phosphinic acid compounds, phenanthroline and the aluminium acetylacetonate.The specific examples of phosphinic acid compounds comprises phosphoric acid, 1-hydroxyethyl-1,1-di 2 ethylhexyl phosphonic acid (C
2H
6O
7P
2) and Amino Trimethylene Phosphonic Acid (C
2H
12O
9P
3N).1,10-phenanthroline monohydrate (C
12HaN
2H
2O) and the aluminum complex (Al of methyl ethyl diketone
2[CH (COCH
3)
3])) respectively as the example of phenanthroline compounds and aluminium acetylacetonate and provide.Preferably with jelling agent with 2% or still less amount add in the polishing composition.
Polishing composition of the present invention can with the conventional polishing composition of preparation prepare by abrasive grain being suspended in the water and inorganic phosphor-contained acid or its salt, the mineral acid that contains nitrate radical or its salt and hydrogen peroxide being added in this suspension in a like fashion.All components can be mixed, and dilution is used.In addition, have a kind ofly in advance each component to be divided into two groups, for example one group comprises water, abrasive grain and nitric acid, and another group comprises water, phosphoric acid and hydrogen peroxide, afterwards with these two groups of blended methods.
Polishing composition of the present invention advantageously can be applicable to the to have high storage density magnetic disk substrate of (usually storage density be 3G bit/in2 or bigger), it is represented as the magnetic head disk that utilizes magnetic resistance (MR) effect.Application with the disk that hangs down storage density is seen it also is effective from improving the reliability angle.
The magnetic hard-disk substrate that polishing composition of the present invention can be used does not have special restriction, but when polishing composition of the present invention is applied to aluminium substrate when (comprising the aluminium alloy substrate), particularly be applied to when for example being coated with the aluminium substrate of NiP, can advantageously obtain high-quality glazed surface from industrial point of view by the electroless plating film.
Finishing method generally includes following steps: make the polishing pad that is usually used in slurries shape abrasive material facing to magnetic disk substrate, with this mat or substrate rotation, simultaneously these slurries are imposed in the gap between this mat and this substrate.
It is extremely low that the disk of being made by the substrate that uses polishing composition polishing of the present invention demonstrates the frequency that little defective such as Wei Keng and little cut take place, and the surface of this disk has excellent surface flatness, is expressed as about 2-3 μ m with surfaceness (Ra).
Below with reference to the present invention of embodiment more detailed description, but the present invention never is limited to these embodiment.
Embodiment 1-15
The type and the performance of used abrasive material in table 1 each embodiment of expression and the Comparative Examples
Table 1
| Abrasive grain (used title in the table 2) | Trade(brand)name | Mean particle size (μ m) |
| Silicon oxide [1] (silica [1]) silicon oxide [2] (silica [2]) silicon oxide [3] (silica [3]) silicon oxide [4] (silica [4]) | ????Syton?HT-50 ????E-150J ????Aerosil?50 ????Snowtex?30 | ????0.05 ????0.1 ????0.1 ????0.01 |
| Titanium oxide [1] (titanium dioxide [1]) titanium oxide [2] (titanium dioxide [2]) alumina zirconia | ????F-2 ????F-4 | ????0.3 ????0.2 ????0.2 ????0.2 |
With ratio shown in the table 2 water, mineral acid 1, mineral acid 2 and oxygenant are added in the colloidal silica of being produced by DuPont (Syton HT-50F), to prepare various moisture polishing compositions.Use polishing machine to polish under the condition below.The results are shown in the table 2.
Mean particle size uses Microtrac UPA150 type (by Honeywell, Inc. makes) laser Doppler frequency analysis type particle size distribution analysis instrument to measure.The measured value of granule size is shown in Table 1.The pH of composition uses the Horiba that has glass electrode, and Ltd.D-13 type pH meter is measured.
Embodiment 16 and 17
Will be by Nippon Silica Industrial Co., Ltd. the white carbon black of Sheng Chaning (E-150J) and by Nippon Aerosil Co., Ltd. the pyrogenic silica of Sheng Chaning (Aerosil 50) grinds in stirring mill, and remove macrobead, thereby obtain the silicon oxide that mean particle size is 0.1 μ m by classification.Then, add entry, mineral acid 1, mineral acid 2 and oxygenant, to prepare various moisture polishing compositions with ratio shown in the table 2.Use polishing machine to polish under the condition below.The results are shown in the table 2.
Embodiment 18-20
Will be by SHOWA TITANIUM CO., titanium oxide (SupertitaniaF-4), alumina and the zirconium white that LTD. produces grinds in stirring mill, and removes macrobead by classification, thereby obtains titanium oxide, alumina and zirconium white that mean particle size is 0.2 μ m.Then, add entry, mineral acid 1, mineral acid 2 and oxygenant, to prepare various moisture polishing compositions with ratio shown in the table 2.Use polishing machine to polish under the condition below.The results are shown in the table 2.
Embodiment 21
To by Nissan Chemical Industriales, in the colloidal silica (Snowtex30) that Ltd. produces, add entry, mineral acid 1, mineral acid 2 and oxygenant with ratio shown in the table 2, to prepare various moisture polishing compositions.Use polishing machine to polish under the condition below.The results are shown in the table 2.
(polishing condition)
For substrate, use 3.5 inches aluminium dishes that are coated with NiP by the electroless plating film.
(polishing machine and polishing condition)
Polishing machine ... ... ... ... ... 4 road Twp-sided polishing machines
Polishing pad ... ... ... ... ... Suede type (Polytex DG, by Rodel, Inc. makes)
Low surperficial dull and stereotyped speed ... ... ... 60rpm
Slurry feed speed ... ... ... ... 50ml/min
Polishing time ... ... ... ... ... 5min
Operating pressure ... ... ... ... ... .50g/cm
2
(polishing performance assessment)
Polishing speed ... the reduction by polishing back aluminium dish weight is calculated
Surfaceness uses Talystep and Talydata2000 (being made by Rank Taylor Hobson Co.) to measure
Throwing the trace degree of depth uses 3D type Tencor P-12 pin type surface analyzer to detect by phase state analysis.
Table 2 illustrates the assessment result of polishing performance.It is 2nm or lower that symbol A in the table 2 in " cut " hurdle represents to throw the trace degree of depth.It is 2-10nm that symbol B in " cut " hurdle represents to throw the trace degree of depth.In embodiment and Comparative Examples, all do not find to surpass the throwing trace degree of depth of 10nm.
Comparative Examples 1-7
With ratio shown in the table 3 water, aluminum nitrate etc. and hydrogen peroxide are added in the colloidal silica of being produced by DuPont (Syton HT-50F), to prepare moisture polishing composition.Polish in the mode similar to embodiment.The results are shown in the table 3.
Comparative Examples 8
Will be by SHOWA TITANIUM CO., the titanium oxide (Supertitania F-2) that LTD. produces grinds in stirring mill, and removes macrobead by classification, thereby obtains the titanium oxide that mean particle size is 0.3 μ m.Then, add entry and aluminum nitrate, to prepare moisture polishing composition with ratio shown in the table 3.Polish in the mode similar to embodiment.The results are shown in the table 3.
Comparative Examples 9
Will be by SHOWA TITANIUM CO., the titanium oxide (Supertitania F-4) that LTD. produces grinds in stirring mill, and removes macrobead by classification, thereby obtains the titanium oxide that mean particle size is 0.2 μ m.Then, add entry and aluminum nitrate, to prepare moisture polishing composition with ratio shown in the table 3.Polish in the mode similar to embodiment.The results are shown in the table 3.
Table 2
| Embodiment | Abrasive grain | Mineral acid | Oxygenant | ??pH | Polishing speed (μ m/min) | Surface roughness Ra (nm) | Cut | The hole | |||||
| Type | Content (quality %) | ?????????1 | ????????????2 | Type | Content (quality %) | ||||||||
| Type | Content (quality %) | Type | Content (quality %) | ||||||||||
| ????1 ????2 ????3 ????4 ????5 ????6 ????7 ????8 ????9 ????10 ????11 ????12 ????13 ????14 ????15 | Silica [1] 5 silica [1] 10 silica [1] 15 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 | Phosphatase 11 .5 phosphatase 11 .5 phosphatase 11 .5 phosphoric acid 0.5 phosphoric acid 3.0 phosphatase 11 .5 phosphatase 11 .5 phosphoric acid 3.0 phosphoric acid 3.0 phosphatase 11 .5 phosphatase 11 .5 phosphatase 11 .5 phosphatase 11 .5 phosphatase 11 .5 phosphonic acids 1.5 | Nitric acid 0.4 nitric acid 0.4 nitric acid 0.4 nitric acid 0.4 nitric acid 0.4 nitric acid 0.2 nitric acid 0.6 nitric acid 0.4 nitric acid 0.4 acylamino-sulfuric acid 0.4 sulfuric acid 0.4 boric acid 0.4 nitric acid 0.4 nitric acid 0.4 nitric acid 0.4 | ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.3 ??H 2O 2?????????????2.0 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 ??NaBO 31.5 ammonium persulphate 2.0 H 2O 2?????????????0.5 | ??1.3 ??1.4 ??1.6 ??1.6 ??1.2 ??1.6 ??1.2 ??1.4 ??1.4 ??1.6 ??1.4 ??1.5 ??1.7 ??1.2 ??1.4 | ????0.18 ????0.21 ????0.22 ????0.19 ????0.22 ????0.19 ????0.22 ????0.19 ????0.22 ????0.20 ????0.20 ????0.20 ????0.21 ????0.20 ????0.21 | ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 | ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A | ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A ??A | ||||
| ????16 ????17 | Silica [2] 10 silicas [3] 10 | Phosphatase 11 .5 phosphatase 11 .5 | Nitric acid 0.4 nitric acid 0.4 | ??H 2O 2?????????????0.5 ??H 2O 2?????????????0.5 | ??1.4 ??1.4 | ????0.20 ????0.20 | ????0.2 ????0.2 | ??A ??A | ??A ??A | ||||
| ????18 | Titanium oxide [2] 6 | Phosphatase 11 .5 | Nitric acid 0.4 | ??H 2O 2?????????????0.5 | ??1.4 | ????0.21 | ????0.3 | ??A | ??A | ||||
| ????19 | Alumina 15 | Phosphatase 11 .5 | Nitric acid 0.4 | ??H 2O 2?????????????0.5 | ??1.4 | ????0.21 | ????0.3 | ??A | ??A | ||||
| ????20 | Zirconium white 15 | Phosphatase 11 .5 | Nitric acid 0.4 | ??H 2O 2?????????????0.5 | ??1.4 | ????0.21 | ????0.3 | ??A | ??A | ||||
| ????21 | Silica [4] 10 | Phosphatase 11 .5 | Nitric acid 0.4 | ??H 2O 2?????????????0.5 | ??1.4 | ????0.14 | ????0.1 | ??A | ??A | ||||
Table 3
| Comparative Examples | Abrasive grain | Mineral acid | Oxygenant | ????pH | Polishing speed (μ m/min) | Surface roughness Ra (nm) | Cut | The hole | |||||
| Type | Content (quality %) | ???????????1 | ??????????2 | Type | Content (quality %) | ||||||||
| Type | Content (quality %) | Type | Content (quality %) | ||||||||||
| ??1 ??2 ??3 ??4 ??5 ??6 ??7 ??8 ??9 | Silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 silica [1] 10 titanium oxide [1] 6 titanium oxide [2] 6 | Aluminum nitrate 5.0--phosphoric acid 3.0 phosphonic acids 3.0 nitric acid 0.4 acylamino-sulfuric acid 1.0 sulfuric acid 0.4 aluminum nitrate 5.0 aluminum nitrates 5.0 | ------------acylamino-sulfuric acid 0.4---- | ??H 2O 2?????????1.0 ??H 2O 2?????????1.0 ??H 2O 2?????????1.0 ??H 2O 2?????????1.0 ??H 2O 2?????????1.0 ??H 2O 2?????????1.0 ??H 2O 2?????????1.0 ?????????????-- ?????????????-- | ????2.0 ????2.0 ????1.5 ????1.5 ????1.5 ????2.0 ????1.3 ????3.0 ????3.0 | ???0.08 ???0.09 ???0.11 ???0.11 ???0.11 ???0.11 ???0.11 ???0.21 ???0.21 | ????0.4 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.2 ????0.4 ????0.3 | ??B ??A ??A ??A ??A ??A ??A ??B ??B | ??A ??A ??A ??A ??A ??A ??A ??B ??B | ||||
Industrial applicability
When using polishing composition of the present invention that dish is polished, this dish can polish rapidly, so that its surface roughness becomes extremely low. The disk of being made by this polishing disk can be used as the low speed that can obtain the high density storage and flies to turn to the magnetic head hard disk.
So the disk of polishing especially in high-density storage media (storage density is 3G bit/in2 or bigger) very useful, this storage medium be represented as the medium that uses the MR magnetic head utilize magnetic resistance (MR) effect in the disk, and the disk of so polishing sees it also is useful from the angle that obtains to have low storage density but have the medium of high reliability.
Claims (13)
1. a polishing composition comprises the abrasive grain that is contained in the water-bearing media, inorganic phosphor-contained acid or its salt and another kind of mineral acid or its salt.
2. as the desired polishing composition of claim 1, wherein abrasive grain is at least a material that is selected from alumina, titanium oxide, silica and the zirconium white.
3. as claim 1 or 2 desired polishing compositions, wherein the mean particle size of abrasive grain is 0.001-0.5 μ m.
4. as each desired polishing composition among the claim 1-3, wherein abrasive grain is a colloidal particles.
5. as each desired polishing composition among the claim 1-4, wherein inorganic phosphor-contained acid is Phosphoric acid or phosphonic acid.
6. as each desired polishing composition among the claim 1-5, wherein another kind of mineral acid or its salt are at least a acid that is selected from nitric acid, sulfuric acid, amido sulfuric acid and the boric acid.
7. as each desired polishing composition among the claim 1-6, wherein oxygenant is at least a compound that is selected from superoxide, perborate, persulphate or the nitrate.
8. as the desired polishing composition of claim 7, wherein superoxide is a hydrogen peroxide.
9. as the desired polishing composition of claim 7, wherein perborate is a Sodium peroxoborate.
10. as each desired polishing composition among the claim 1-9, wherein pH is 1-5.
11. as each desired polishing composition among the claim 1-10, wherein the content of abrasive grain is 3-30 quality %, the content of mineral acid or its salt is 0.1-8 quality %, and the content of oxygenant is 0.2-5 quality %.
12. as each desired polishing composition among the claim 1-11, wherein polishing composition is the composition that is used to polish magnetic disk substrate.
13. one kind with the desired magnetic disk substrate that is used to polish the polishing composition of magnetic disk substrate of claim 12.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001266315 | 2001-09-03 | ||
| JP266315/2001 | 2001-09-03 | ||
| JP2002132738A JP4074126B2 (en) | 2001-09-03 | 2002-05-08 | Polishing composition |
| JP132738/2002 | 2002-05-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1561376A true CN1561376A (en) | 2005-01-05 |
Family
ID=26621559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02819416 Pending CN1561376A (en) | 2001-09-03 | 2002-09-03 | Polishing composition |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4074126B2 (en) |
| CN (1) | CN1561376A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101024736B (en) * | 2006-02-21 | 2011-03-30 | 赢创德固赛有限公司 | Aluminium oxide-containing dispersion, preparation containing the dispersion and melamine resin and solidified product prepared by the preparation |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4986099B2 (en) * | 2003-06-09 | 2012-07-25 | 花王株式会社 | Substrate manufacturing method |
| JP2005001018A (en) * | 2003-06-09 | 2005-01-06 | Kao Corp | Method of manufacturing substrate |
| JP4202201B2 (en) * | 2003-07-03 | 2008-12-24 | 株式会社フジミインコーポレーテッド | Polishing composition |
| JP2008080486A (en) * | 2007-10-04 | 2008-04-10 | Kao Corp | Polishing kit for magnetic disk |
| JP7061859B2 (en) * | 2017-09-29 | 2022-05-02 | 株式会社フジミインコーポレーテッド | Method for manufacturing polishing composition and magnetic disk substrate |
-
2002
- 2002-05-08 JP JP2002132738A patent/JP4074126B2/en not_active Expired - Lifetime
- 2002-09-03 CN CN 02819416 patent/CN1561376A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101024736B (en) * | 2006-02-21 | 2011-03-30 | 赢创德固赛有限公司 | Aluminium oxide-containing dispersion, preparation containing the dispersion and melamine resin and solidified product prepared by the preparation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4074126B2 (en) | 2008-04-09 |
| JP2003147337A (en) | 2003-05-21 |
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