CN1549056A - Exposure system and method - Google Patents
Exposure system and method Download PDFInfo
- Publication number
- CN1549056A CN1549056A CNA031386342A CN03138634A CN1549056A CN 1549056 A CN1549056 A CN 1549056A CN A031386342 A CNA031386342 A CN A031386342A CN 03138634 A CN03138634 A CN 03138634A CN 1549056 A CN1549056 A CN 1549056A
- Authority
- CN
- China
- Prior art keywords
- offset
- exposure
- adjusted value
- tool parameters
- alignment parameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The exposure system includes one compensation unit and one exposure device. The compensation unit receives at least one regulating value of machine parameter and compensates corresponding aligning parameter according to the regulating value and the regulating formula corresponding to the machine parameter. The exposure device completes the exposure operation of the wafer by using the compensated aligning parameter. The exposure method includes the following steps: receiving the regulating value corresponding to at least one machine parameter; compensating the corresponding aligning parameter based on the regulating value and the regulating formula corresponding to the machine parameter; and completing the aligning and exposure operation of the wafer by using the compensated aligning parameter.
Description
Technical field
The invention relates to a kind of exposure system and method, be particularly to a kind of exposure bench that is applicable to that semiconductor is made, and can directly aim at and the exposure system and the method for exposing for adjusted exposure bench.
Background technology
During semiconductor was made, little shadow (Photolithography) processing procedure of yellow light area was one of of paramount importance step in the whole processing procedure.Relevant within the semiconductor product with modular construction, as the pattern (Pattern) of each layer film and the zone of doping (Dopants), all must decide by micro-photographing process.Therefore, the semiconductor manufacturing industry is represented the complexity of corresponding this product processing procedure usually with the little shadow number of times or the needed light shield quantity of a required process of processing procedure.As mentioned above, because the processing procedure complexity of yellow light area exposure bench, therefore, exposure bench normally overall semiconductor is made one of main bottleneck in the link.
In order to improve the resolution of exposure, exposure bench can use the mode of " repeating and stepping (Step andRepeat) " to expose usually, so exposure bench may also be referred to as and is stepper (Stepper).Exposure bench is with after the light source process light shield, just be radiated at after dwindling according to proper proportion again on the wafer position of part, so the exposure of full wafer wafer must could the step of exposure that the full wafer wafer is required be finished through repeatedly and repeatedly expose " one one ".
In addition, as previously mentioned, usually need the above figure transfer of a level just can finish in the processing procedure, yet exposing wafer step is once only finished the transfer of a layer pattern, therefore, when carrying out little shadow step, " each piece " exposure position is aimed on not only needing accurately with wafer when the exposure of same layer pattern, also need be when carrying out the different layers graph exposure, and accurately with the position alignment of each light shield and wafer.
Because exposure bench is when carrying out the exposure of each unit of cargo (Lot) wafer, it all has slightly drift (deviation) in order to exposure and the correct parameter value of aiming at (Recipe), therefore needing all after the exposure that whenever executes a collection of wafer that the wafer after the exposure is measured the foundation of exposure bench parameter value correction when obtaining error amount as the next group exposing wafer.Generally speaking, above-mentioned corrective action all is by manually or through a feedback (Feed Back) system carrying out.The exposure method and the system of number 516099 exposure, the one automatic feedback correction of Taiwan patent announcement, it can see through feedback system with the computer system value of benefit calculating more accurately skew value of benefit for above-mentioned alignment parameter, to avoid the shortcoming of the artificial computing method of tradition.
For the invention of Taiwan patent announcement numbers 516099, it is in order to adjust with the parameter of aiming at for exposing wafer between different unit of cargos, and be not at after the board adjustment correlation parameter being compensated, therefore, when exposure bench breaks down based on some reason or safeguards, after making that the tool parameters of exposure bench is readjusted by the slip-stick artist, the gold-tinted slip-stick artist then still must utilize a test wafer (Pilot Wafer) to send into exposure bench and handle, again when manually calculating exposure bench and handle the next group wafer required parameter benefit value to do correction.This kind mode must expend a large amount of time, and rate (ReworkRate) rises because the people reforms for operation generation deviation makes easily, thereby reduces overall throughput.
Summary of the invention
Fundamental purpose of the present invention is for providing a kind of exposure bench that is applicable to that semiconductor is made, and can directly aim at and the exposure system and the method for exposing for the adjusted exposure bench of board.
In order to reach above-mentioned purpose, can reach by exposure system provided by the present invention and method.According to the exposure system of the embodiment of the invention, comprise a compensating unit and an exposure device.Compensating unit receives the corresponding adjusted value that comprises a kind of tool parameters at least, compensates for corresponding alignment parameter according to the adjustment formula of adjusted value and corresponding this tool parameters.Exposure device uses the alignment parameter after the benefit value to aim at and exposure operation for wafer.
According to the exposure method of the embodiment of the invention, at first, receive the adjusted value of corresponding at least a tool parameters.Then, the adjustment formula according to adjusted value and corresponding tool parameters compensates for corresponding alignment parameter.At last, the alignment parameter after the use benefit value is aimed at and exposure operation for wafer.
Description of drawings
Fig. 1 is that a synoptic diagram is the system architecture that shows according to the exposure system of the embodiment of the invention;
Fig. 2 is that a form is in order to write down the adjustment formula between corresponding tool parameters and affected alignment parameter;
Fig. 3 A to Fig. 3 H shows the numerical analysis chart of adjusting formula respectively;
Fig. 4 is that a process flow diagram is the operating process that shows according to the exposure method of the embodiment of the invention.
Symbol description:
The 100-exposure device
The 101-aligned units
The 102-exposing unit
110,120-wafer
The 130-compensating unit
131-adjusts formula
The 200-form
S401, S402 ..., the S406-operation steps
Embodiment
Fig. 1 shows the system architecture according to the exposure system of the embodiment of the invention.Exposure system according to the embodiment of the invention comprises an exposure device 100 and a compensating unit 130.
Have one in the exposure device 100 and aim at a unit 101 and an exposing unit 102.Aligned units 101 is in order to foundation relevant alignment parameter, shines size (Shot Scaling Y), irradiation quadrature (Shot Orthogonality), rotates action of aiming at when next scanning/stepping for a figure layer of wafer 110 beginnings such as (Shot Rotation) parameter exposes and the alignment actions of carrying out the figure interlayer with irradiation as X-axis displacement (Offset_X), Y-axis displacement (Offset_Y), X-axis irradiation big or small (Shot Scaling X), Y-axis.Exposing unit 102 is in order to after aligned units 101 is aligned to correct position, and wafer 110 is exposed.Wafer 110 through aligned units 101 and exposing unit 102 aim at and exposure program after, just become the wafer 120 of finishing micro-photographing process, and the manufacture of semiconductor that it can be delivered to other carries out relevant treatment.
It should be noted that, after exposure device 100 is through maintenance or relevant board adjustment, the adjusted value that exposure device 100 is understood the tool parameters of will being correlated with is sent to compensating unit 130, and the parameter benefit value operation of wait compensating unit 130, and after the parameter benefit value operation of compensating unit 130 is finished, just can proceed the aligning and the exposure operation of wafer.
The adjustment formula 131 that has the tool parameters of corresponding different exposure bench 100 in the compensating unit 130.Wherein, the tool parameters of exposure bench 100 can comprise FIA_X, FIA_Y, X-axis match displacement (Matching Offset X), Y-axis machine irradiation size (Machine Shot Scaling Y), LSA_X, LSA_Y, irradiation crooked (Shot Skewness), with irradiation rotation tool parameters such as (Shot Rotation).
In addition, Fig. 2 shows the adjustment formula between a form 200 corresponding tool parameters of record and affected alignment parameter.Shown in form 200, affected alignment parameter is the X-axis displacement when tool parameters is FIA_X, and adjusts formula accordingly and equal: B=(1.0883*A)-0.0016; When tool parameters was FIA_Y, affected alignment parameter was the Y-axis displacement, and adjusted formula accordingly and equal: B=(1.0232*A)-0.0023; When tool parameters was LSA_X, affected alignment parameter was the X-axis displacement, and adjusted formula accordingly and equal: B=(0.9958*A)+0.0011; When tool parameters was LSA_Y, affected alignment parameter was the Y-axis displacement, and adjusted formula accordingly and equal: B=(1.0042*A)-0.0004; When tool parameters is an X-axis when matching displacement, affected alignment parameter is an X-axis irradiation size, and adjusts formula accordingly and equal: B=(84.853*A)+0.0639; When tool parameters is Y-axis machine when size irradiation, affected alignment parameter is a Y-axis irradiation size, and adjusts formula accordingly and equal: B=(1.0053*A)-0.0193; When tool parameters is irradiation when crooked, affected alignment parameter is the irradiation quadrature, and adjusts formula accordingly and equal: B=(0.9422*A)+0.0094; And when tool parameters is when rotation irradiation, affected alignment parameter is the irradiation rotation, and adjusts formula accordingly and equal: B=(1.0247*A)-0.0214.Wherein, the A in the above-mentioned formula is the adjusted value of tool parameters, and B is the offset of alignment parameter.
Relation that it should be noted that above-mentioned tool parameters and alignment parameter can be added and subtracted a numerical value with each parameter to scale through tool parameters, measures the numerical value that all the other wafer alignments manifested via the exposure back again, learns to have or not to influence each other between each parameter of numerical analysis.In addition, the numerical analysis chart of corresponding above-mentioned each formula is shown in Fig. 3 A to Fig. 3 H respectively.Wherein, utilize the numerical analysis skill to ask its corresponding linear formula for each distribution.
Compensating unit 130 can be received the adjusted value of corresponding tool parameters by exposure device 100, and calculates an offset according to the adjustment formula of adjusted value and corresponding tool parameters, and compensates according to the alignment parameter of offset for corresponding (influenced).After compensating unit 130 finished for the alignment parameter in the exposure device 100 compensation, exposure device 100 just can be aimed at and exposure operation for wafer according to the alignment parameter after the benefit value.
Fig. 4 shows the operating process according to the exposure method of the embodiment of the invention.At first, as step S401, whether the tool parameters of judging exposure bench is through adjusting.If tool parameters is through adjusting (step S401 is), then as step S402, compensating unit 130 is received the adjusted value of corresponding tool parameters by exposure device 100.Then, as step S403, calculate the offset of respective aligned parameter according to the adjustment formula of adjusted value and corresponding tool parameters.It should be noted that compensating unit 130 can be according to retrieve corresponding affected alignment parameter and the corresponding formula of adjusting through the tool parameters of adjusting.In addition, if a plurality of tool parameters are arranged simultaneously through adjusting, then a plurality of adjustment formula of corresponding different alignment parameters also can be captured and be used simultaneously.
Then, as step S404, compensating unit 130 compensates for corresponding alignment parameter according to the offset that calculates.Afterwards, as step S405, the alignment parameter behind exposure device 100 using compensations is aimed at and exposure operation for wafer.Otherwise if not process adjustment of tool parameters (step S401 denys), then as step S406, exposure device 100 directly uses original alignment parameter to aim at and exposure operation for wafer.
Therefore, by exposure system proposed by the invention and method, make exposure bench that semiconductor makes after the board adjustment, can directly aim at and expose, thereby save the known plenty of time spent during with manual operation, and then reduce the rate of reforming, and promote overall throughput.
Claims (20)
1. exposure system, it is characterized in that: described exposure system comprises:
One compensating unit receives an adjusted value of corresponding at least one tool parameters, according to this adjusted value with mutually should tool parameters one adjust formula and aim at parameter for corresponding one and compensate; And
One exposure device, this alignment parameter behind the using compensation is aimed at and exposure operation for a wafer.
2. exposure system according to claim 1 is characterized in that: this compensating unit is to calculate an offset according to this adjusted value and this adjustment formula, and compensates for this alignment parameter according to this offset.
3. exposure system according to claim 2 is characterized in that: this tool parameters is FIA_X, and this alignment parameter is X-axis displacement (Offset_X), and this adjustment formula equals:
B＝(-1.0883*A)-0.0016
Wherein, A is this adjusted value, and B is this offset.
4. exposure system according to claim 2 is characterized in that: this tool parameters is FIA_Y, and this alignment parameter is Y-axis displacement (Offset_Y), and this adjustment formula equals:
B＝(-1.0232*A)-0.0023
Wherein, A is this adjusted value, and B is this offset.
5. exposure system according to claim 2 is characterized in that: this tool parameters is LSA_X, and this alignment parameter is X-axis displacement (Offset_X), and this adjustment formula equals:
B＝(-0.9958*A)+0.0011
Wherein, A is this adjusted value, and B is this offset.
6. exposure system according to claim 2 is characterized in that: this tool parameters is LSA_Y, and this alignment parameter is Y-axis displacement (Offset_Y), and this adjustment formula equals:
B＝(-1.0042*A)-0.0004
Wherein, A is this adjusted value, and B is this offset.
7. exposure system according to claim 2 is characterized in that: this tool parameters is the X-axis displacement (Matching Offset X) that matches, and this alignment parameter is an X-axis irradiation size (ShotScaling X), and this adjustment formula equals:
B＝(-84.853*A)+0.0639
Wherein, A is this adjusted value, and B is this offset.
8. exposure system according to claim 2 is characterized in that: this tool parameters is a Y-axis irradiation size (Shot Scaling Y) for Y-axis machine irradiation size (Machine Shot Scaling Y), this alignment parameter, and this adjustment formula equals:
B＝(-1.0053*A)-0.0193
Wherein, A is this adjusted value, and B is this offset.
9. exposure system according to claim 2 is characterized in that: this tool parameters is irradiation crooked (Shot Skewness), and this alignment parameter is irradiation quadrature (ShotOrthogonality), and this adjustment formula equals:
B＝(-0.9422*A)+0.0094
Wherein, A is this adjusted value, and B is this offset.
10. exposure system according to claim 2 is characterized in that: this tool parameters is irradiation rotation (Shot Rotation), and this alignment parameter is the irradiation rotation, and this adjustment formula equals:
B＝(-1.0247*A)-0.0214
Wherein, A is this adjusted value, and B is this offset.
11. an exposure method comprises the following steps:
Receive an adjusted value of corresponding at least one tool parameters;
According to this adjusted value with mutually should tool parameters one adjust formula and aim at parameter for corresponding one and compensate; And
This alignment parameter behind the using compensation is aimed at and exposure operation for a wafer.
12. exposure method according to claim 11 wherein is to calculate an offset according to this adjusted value and this adjustment formula, and compensates for this alignment parameter according to this offset.
13. exposure method according to claim 12, wherein this tool parameters is FIA_X, and this alignment parameter is X-axis displacement (Offset_X), and this adjustment formula equals:
B＝(-1.0883*A)-0.0016
Wherein, A is this adjusted value, and B is this offset.
14. exposure method according to claim 12, wherein this tool parameters is FIA_Y, and this alignment parameter is Y-axis displacement (Offset_Y), and this adjustment formula equals:
B＝(-1.0232*A)-0.0023
Wherein, A is this adjusted value, and B is this offset.
15. exposure method according to claim 12, wherein this tool parameters is LSA_X, and this alignment parameter is X-axis displacement (Offset_X), and this adjustment formula equals:
B＝(-0.9958*A)+0.0011
Wherein, A is this adjusted value, and B is this offset.
16. exposure method according to claim 12, wherein this tool parameters is LSA_Y, and this alignment parameter is Y-axis displacement (Offset_Y), and this adjustment formula equals:
B＝(-1.0042*A)-0.0004
Wherein, A is this adjusted value, and B is this offset.
17. exposure method according to claim 12, wherein this tool parameters is the X-axis displacement (Matching Offset X) that matches, and this alignment parameter is an X-axis irradiation size (Shot Scaling X), and this adjustment formula equals:
B＝(-84.853*A)+0.0639
Wherein, A is this adjusted value, and B is this offset.
18. exposure method according to claim 12, wherein this tool parameters is Y-axis machine irradiation size (Machine Shot Scaling Y), and this alignment parameter is a Y-axis irradiation size (ShotScaling Y), and this adjustment formula equals:
B＝(-1.0053*A)-0.0193
Wherein, A is this adjusted value, and B is this offset.
19. exposure method according to claim 12, wherein this tool parameters is irradiation crooked (Shot Skewness), and this alignment parameter is irradiation quadrature (Shot Orthogonality), and this adjustment formula equals:
B＝(-0.9422*A)+0.0094
Wherein, A is this adjusted value, and B is this offset.
20. exposure method according to claim 12, wherein this tool parameters is irradiation rotation (Shot Rotation), and this alignment parameter is the irradiation rotation, and this adjustment formula equals:
B＝(-1.0247*A)-0.0214
Wherein, A is this adjusted value, and B is this offset.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03138634 CN1261824C (en) | 2003-05-21 | 2003-05-21 | Exposure system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03138634 CN1261824C (en) | 2003-05-21 | 2003-05-21 | Exposure system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1549056A true CN1549056A (en) | 2004-11-24 |
| CN1261824C CN1261824C (en) | 2006-06-28 |
Family
ID=34323780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03138634 Expired - Lifetime CN1261824C (en) | 2003-05-21 | 2003-05-21 | Exposure system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1261824C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101493655B (en) * | 2008-01-21 | 2011-07-20 | 联华电子股份有限公司 | Exposure method |
| CN103529651A (en) * | 2013-10-23 | 2014-01-22 | 深圳市华星光电技术有限公司 | Method and system for realizing automatic value filling in glass substrate exposure process |
| CN105321799A (en) * | 2014-07-16 | 2016-02-10 | 联华电子股份有限公司 | Asymmetric compensation method for photoetching overlay manufacturing process |
| CN111580345A (en) * | 2019-02-18 | 2020-08-25 | 长鑫存储技术有限公司 | Photoetching feedback system and method |
-
2003
- 2003-05-21 CN CN 03138634 patent/CN1261824C/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101493655B (en) * | 2008-01-21 | 2011-07-20 | 联华电子股份有限公司 | Exposure method |
| CN103529651A (en) * | 2013-10-23 | 2014-01-22 | 深圳市华星光电技术有限公司 | Method and system for realizing automatic value filling in glass substrate exposure process |
| CN103529651B (en) * | 2013-10-23 | 2015-11-25 | 深圳市华星光电技术有限公司 | A kind of method and system realizing automatic makeup value in glass substrate exposure manufacture process |
| CN105321799A (en) * | 2014-07-16 | 2016-02-10 | 联华电子股份有限公司 | Asymmetric compensation method for photoetching overlay manufacturing process |
| CN105321799B (en) * | 2014-07-16 | 2018-11-20 | 联华电子股份有限公司 | Asymmetry compensation method for photoetching overlay manufacture craft |
| CN111580345A (en) * | 2019-02-18 | 2020-08-25 | 长鑫存储技术有限公司 | Photoetching feedback system and method |
| CN111580345B (en) * | 2019-02-18 | 2023-04-25 | 长鑫存储技术有限公司 | Photoetching feedback system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1261824C (en) | 2006-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1630840A (en) | Method and apparatus for embedded process control framework in tool systems | |
| US5585925A (en) | Alignment method | |
| CN1449577A (en) | Method and apparatus for performing final critical dimension control | |
| CN1629729A (en) | Adaptive lithographic critical dimension enhancement | |
| US5499099A (en) | Alignment method and alignment system | |
| US11687010B2 (en) | System and method for correcting overlay errors in a lithographic process | |
| CN1261824C (en) | Exposure system and method | |
| US6342703B1 (en) | Exposure apparatus, exposure method, and device manufacturing method employing the exposure method | |
| CN113741155A (en) | Optimizing a process sequence for the manufacture of product units | |
| KR970066722A (en) | Exposure apparatus and exposure method | |
| CN1275091C (en) | Photolithographic critical dimension control using reticle measurements | |
| US6911287B2 (en) | Method and apparatus for measuring process errors and method and apparatus for measuring overlay using the same | |
| US6309944B1 (en) | Overlay matching method which eliminates alignment induced errors and optimizes lens matching | |
| US11635682B2 (en) | Systems and methods for feedforward process control in the manufacture of semiconductor devices | |
| CN1261825C (en) | Exposure system and method with group compensation function | |
| CN1920720A (en) | Method for adjusting machine set, manufacture control system and semiconductive manufacture system | |
| EP1253497B1 (en) | Method for adjusting processing parameters of plate-like objects in a processing tool | |
| KR100336525B1 (en) | A Method of Aligning in a Photolithography Process for Semiconductor Device Fabrication | |
| CN1243284C (en) | Automatic feedback modified exposure method and system | |
| TW200941010A (en) | Method and system for processing test wafer in photolithography process | |
| JP2003017386A (en) | Alignment method, method and apparatus for exposure, and method for manufacturing device | |
| CN1648774A (en) | Micro image parameter feedback system and control method | |
| KR20010058692A (en) | Method for correcting an overlay parameters of a semiconductor wafer | |
| JP2001297966A (en) | Exposure method, exposure system, projection aligner, manufacturing method of semiconductor device, semiconductor manufacturing factory, and method for maintaining projection aligner | |
| JP2009283600A (en) | Exposure aligning method, exposure aligning program, and exposure device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20060628 |
|
| CX01 | Expiry of patent term |