CN1648774A - Micro image parameter feedback system and control method - Google Patents
Micro image parameter feedback system and control method Download PDFInfo
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- CN1648774A CN1648774A CN 200410002713 CN200410002713A CN1648774A CN 1648774 A CN1648774 A CN 1648774A CN 200410002713 CN200410002713 CN 200410002713 CN 200410002713 A CN200410002713 A CN 200410002713A CN 1648774 A CN1648774 A CN 1648774A
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Abstract
The photo feedback system includes mainly data base and exposure bench. The data base has the history data of the base and the history data of the exposure bench. The base history data corresponds to preset base and includes the measured data of at least one fore layer. The bench history data include at least post-exposure measured data of the preset under processing and correspond to bases after exposure. The exposure bench corresponding to the bench history data is used to expose preset bases, and has at least one exposure parameter feedback updated based on the base history data and the bench history data.
Description
Technical field
The invention relates to a kind of parameter feedback system, particularly parameter feedback system (the photo feed back system that handles about a kind of little shadow; PFBS).
Background technology
In recent years, along with the increase of integrated circuit integrated level, the semiconductor processes design also develops with the direction that improves density towards dwindling the semiconductor subassembly size.For little shadow is handled, because size of components is dwindled the critical dimension of each layer (critical dimension day by day; CD) also granular thereupon, therefore, layer with layer between overlapping (overlay) quality become more important.
Handle employed exposure sources at present photolithography in semiconductor, be commonly referred to as stepper (stepper) or exposure scanning machine (scanner), its structure mainly is divided into two partly: main system (main system) and control system (control system), wherein main system is divided into light-source system (illuminationsystem) and wafer seat stand system (stage system) again.The composition of light-source system is made up of the lens (lens) and the aligned units (alignment unit) of mask seat stand (reticle stage), consecutive except light-source generation device.
Figure 1A is the alignment system icon of an exposure scanning machine, and the program of its aligning and mechanism are as described below.At first, the mask seat stand in exposure sources loads a mask 10, and carries out one with this wafer seat stand and proofread and correct (calibration) action to locate the exact position of this mask 10.Afterwards, load wafer 20 once photoresistance coating with the aligning before carrying out exposure, guaranteed so that work as the overlapping quality of the various circuit patterns between anterior layer and anterior layer at the wafer seat stand.Next, by an alignment light source unit (alignment lightsource unit) 40, one helium-neon (He-Ne) laser light source system for example, to produce alignment light, be incident upon by a lens combination 50 on alignment mark (alignment mark) 30 surfaces on this wafer 20, follow again by 50 times footpaths of above-mentioned lens combination with the diffraction light 60 of for example diffraction that produces by retroeflection reaction and the message of diffraction light to be collected into photo-detector (detector) 80, so that do next step alignment actions through light filter (filter) 70.
For the semiconductor wafer manufacturing industry, general way is preceding at execution exposure program (the little shadow of the pattern on the mask is imaged on the wafer), must be via extremely accurate alignment system to carry out alignment procedure, confirm that exposure sources is in predetermined layer or when the The optimal compensation parameter value of anterior layer (current layer), generally speaking, before unloading, need by test or monitor wafer (test or monitor wafer) after exposure, measure all item number certificates of overlapping off-set value (overlay shift) with overlapping measuring equipment (overlay metrology) when anterior layer photoresistance and preceding one deck (pre layer), decide overlapping every compensating parameter via these data, use decision how many off-set values of this feedback (feed back) (offset value) decide this exposure-processed with the alignment system of compensation (compensate) this exposure sources best alignment parameter, so that afterwards (whole lot) by the gross or the several batches of wafers by this correct migration value to expose, to guarantee when anterior layer (current layer) and preceding one deck (or ground floor; First layer) reaches accurate aligning.In addition, test or monitor wafer are also with the required exposure energy that provides of exposure bench is provided.That is to say that the former guarantees to reach accurate the aligning when anterior layer with preceding one deck, the latter then is accurately to control critical dimension (the critical dimension of photoresistance pattern; CD).
Yet before unloading, must record the program of several overlapping compensating parameters and exposure energy earlier via the machine of survey control sheet, all must reform (rework) through Acidwash solution to remove the program of photoresistance after so each test of carrying out or the monitor wafer, the not only use of consumption acids dilution and improve production cost, also unfavorable to the utilization factor of exposure sources, production capacity and cost control are all caused great lethality.
For improving the problems referred to above, make industry at semiconductor wafer and derived the cover shadow parameter feedback system (horizontal photo feed back system) that laterally declines mostly and used and solve the problems referred to above.Shown in Fig. 2 A, before a collection of wafer desire is carried out the exposure alignment procedure, this little shadow parameter feedback system is the collocation automated procedures, with several batches (for example three batches) of nearest front imported that little shadow parameter feedback system database (PFBS Database) stores when the overlapping measurement data of anterior layer bench history data with operational pattern (model) statistical value, the wafer that this batch desire is carried out exposure then determines best alignment parameter with reference to the overlapping movement tendency of this statistical value with output data, control exposure sources then to expose.The benefit of this feedback way is to use the control sheet, just can make exposure sources for the work performance (overlapping measurement data) when anterior layer, maintains certain stable status.For example, if the overlapping measurement data of preceding a collection of wafer some be offset expectation value, with the method for this shadow parameter feedback system that laterally declines, will reduce the side-play amount of the overlapping measurement data of this a collection of wafer instantly toward identical direction.See also Fig. 2 B, Fig. 2 B is a certain exposure bench for the exposure of DT layer (ground floor) figure as a result.Each digit groups on the transverse axis is represented the lot number of a collection of wafer; The right longitudinal axis is represented the overlapping measurement residual value of DT layer and preceding one deck, for example overlapping multiplying power residual value (C-Mag-X (PPM)); The left side longitudinal axis represents that this DT ply multiplying power is offset pre-benefit value (C-Mag-X (PPCS)).Residual value (residue) be defined as after linearity compensation can't compensate the random coefficient (random factor) that eliminates.Show among Fig. 2 B, for exposure bench for benchmark (baseline) value-3.6ppm (central point) of DT layer, the overlapping multiplying power residual value (C-Mag-X (PPM)) of the right longitudinal axis A occurred being labeled as because of certain processing or other factors influence, B, C, its corresponding separately four crowdes of different wafer V6C04288 of 4 unexpected salient points of D (bump), V6C04292, V6C04294 and V6C04296, however above-mentioned under this shadow parameter feedback system that laterally declines of utilization, but still can obtain the normal trend that the overlapping multiplying power of each batch on the transverse axis is offset pre-benefit value (C-Mag-X (PPCS)) unusually.
Then, see also Fig. 2 C, Fig. 2 C exposure that to be a certain exposure bench aim at the DT layer at the GC layer is figure as a result.Each digit groups on the transverse axis is equally represented the lot number of a collection of wafer; The right longitudinal axis is represented the overlapping multiplying power residual value of GC layer aligning DT layer; The left side longitudinal axis represents that the overlapping multiplying power of this GC layer aligning DT layer is offset pre-benefit value (C-Mag-X (PPCS)).What need pay special attention to is that four unexpected salient points GC layer in Fig. 2 C is aimed in the DT layer and occurred once again among Fig. 2 B.And as Fig. 2 B, above-mentioned salient point but still can obtain the normal trend that the overlapping multiplying power of each batch on the transverse axis is offset pre-benefit value (C-Mag-X (PPCS)) under this shadow parameter feedback system that laterally declines in utilization unusually, it shows for the GC layer, the residual value of anterior layer DT layer can directly influence to the residual value of GC layer, and the most important thing is that the shadow parameter that laterally declines feedback system is to do improvement to the residual value amount.
Yet; above-mentioned unusual anterior layer residual value but is potential crisis; because unusual anterior layer residual value very easily misleads when the alignment parameter of anterior layer and does incorrect compensation and obtain wrong exposure parameter, it tends to cause serious overlapping skew in back layer (post layer) is handled.Use the shadow parameter feedback system that laterally declines, measurement data after other the exposure, for example rotation is offset pre-benefit value (C-Rot-X) etc., the described similar problem of leading portion also can occur.So, for the semiconductor of future generation of more being strict with overlapping measurement data, the existing shadow parameter feedback system that laterally declines is to prevent that the rate of reforming (rework rate) is constantly soaring because of misregistration, and influences production scheduling widely and improve production cost.
Summary of the invention
In view of this, the objective of the invention is to remove from the use of test that need to carry out before at every turn unloading or monitor wafer and must reform through Acidwash solution and remove the program of photoresistance.
The rate (rework rate) that another object of the present invention is to prevent to reform constantly rises, improves production scheduling and improve production cost because of misregistration.
Another purpose of the present invention is to avoid to take place misalignment (misalignment) after anterior layer is corresponding to anterior layer.
For reaching above-mentioned purpose, the invention provides a kind of little shadow parameter control method, according to this batch substrate (substrate) historical data and this bench history data, with mathematical operation determine this exposure bench in compensation (the offset or compensate) value of this predetermined layer to control the exposure parameter of this exposure bench, so that this predetermined batch substrate is exposed.The bench history data of base history data and exposure bench at first, is provided.Corresponding predetermined a collection of of base history data comprises overlapping measurement data after the exposure of at least one anterior layer.This bench history data comprises the overlapping measurement data after the exposure at least of predetermined layer in the processing, a collection of substrate after the corresponding exposure.Then, according to this batch base history data and this bench history data, with mathematical operation determine this exposure bench in the offset of this predetermined layer controlling the exposure parameter of this exposure bench, and this predetermined batch substrate is exposed.
The present invention provides a kind of little shadow parameter feedback system in addition, mainly comprises database and exposure bench.Base history data and bench history data are arranged in this database.The corresponding predetermined a collection of substrate of this base history data, and comprise measurement data after the exposure of anterior layer at least.This bench history data comprises at least one exposure back measurement data of the predetermined layer in the processing, a collection of substrate after the corresponding exposure.This exposure bench, corresponding with this bench history data, in order to this predetermined batch substrate is exposed.At least one exposure parameter of this exposure bench is according to this batch historical data and this bench history data and feed back renewal.
Little shadow parameter feedback system of the present invention and control method, it is not the consideration bench history data (just this exposure bench is in the passing performance when anterior layer) of level (or horizontal), more vertically considered this batch substrate that will expose instantly, its measurement data after the anterior layer exposure.So can exempt because the anterior layer metraster of working as that measurement data caused of anterior layer shows problem.
For above and other objects of the present invention, feature and advantage can be become apparent, cited below particularlyly go out preferred embodiment, and conjunction with figs., be described in detail below:
Description of drawings
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Fig. 1 is the sectional view of known exposure alignment system.
Fig. 2 A is the method synoptic diagram of known little shadow parameter feedback system.
Fig. 2 B-2C shows that known little shadow parameter feedback system can't improve at the residual value of anterior layer.
Fig. 3 A is a synoptic diagram of the present invention.
Fig. 3 B is according to the overlapping measurement residual value in anterior layer exposure back of the present invention, when the benchmark of anterior layer exposure bench and the correlativity synoptic diagram of current ply measurement data.
Fig. 3 C is little shadow parameter feedback system of the present invention.
Embodiment
Spirit of the present invention is, when will be when carrying out a collection of substrate and carry out the exposure of certain one deck, the exposure parameter of exposure bench, be not only influenced by the measurement data behind the several batches of exposing substrates that this exposure bench just handled, also can be subjected in the time of anterior layer the measurement data influence after the exposure of this batch substrate.In other words, the shadow parameter feedback system that laterally declines in the prior art (the several batches of substrates that consideration was handled) and the new shadow parameter feedback system that vertically declines (considering the anterior layer result of this batch substrate) have been merged in the present invention.Above-mentioned substrate can be wafer, display base plate, optical module substrate, printed circuit board (PCB) or other material that utilizes exposure-processed to finish.
Below be made as example explanation with semiconductor wafer.Fig. 3 A is a synoptic diagram of the present invention.A collection of wafer 100 will enter exposure bench 102 and carry out M0 layer when exposure, see through the identification code (ID) or the lot number (lot number) of this batch wafer 100, can be from database 108 according to system of the invention process, find out the anterior layer exposure back measurement data of this batch wafer 100, just the wafer history data 104.These wafer history data 104 for example, contain the overlapping measurement data of DT layer and the overlapping measurement data of GC layer.Simultaneously, system of the present invention, see through the board identification code or the board numbering of this exposure bench 102, can be from database (can be different from previous database), find out the M0 layer exposure back measurement data of just having carried out several batches of wafers of identical M0 layer step of exposure at this exposure bench 102, just bench history data 106.These wafer history data 104 and this bench history data 106 can be given little shadow parameter feedback system database (PFBS database) 108 together, have wherein deposited the mathematical operation rule that the slip-stick artist defines according to experience.According to this mathematical operation rule, with wafer history data 104 and bench history data 106 as after the input variable, this PFBS database 108 just can produce output, upgrades or adjust the exposure parameter of control exposure bench 102, just this batch wafer 100 is carried out the exposure of M0 layer then.
In brief, according to system of the present invention, the decision of exposure parameter is not only the variation that will go to remedy exposure bench drift or processing, also will remedy the undesired exposure result of anterior layer.Fig. 3 B is according to the overlapping measurement residual value in anterior layer exposure back of the present invention, when the benchmark of anterior layer exposure bench and the correlativity synoptic diagram of current ply measurement data.Curve among the figure is by last beginning, represent respectively the overlapping measurement residual value 110 in anterior layer exposure back, when the benchmark 112 of anterior layer exposure bench and when anterior layer to preceding ply measurement data 114, to the variation of time.Article three, curve is to work as horizontal ordinate with different time shafts, and painstakingly in three curves, corresponding to the time point of lot number X, aligned together.In Fig. 3 C, the preceding ply of lot number X measure residual value 110 occur unexpected unusual, shown in the A point.Use method of the present invention, at lot number X when anterior layer exposes, the board exposure parameter just can be with reference to the overlapping measurement residual value 110 of anterior layer being modified painstakingly, go up the opposite salient point B of direction so just formed figure, promptly be to utilize computing of the present invention to do compensation.The purpose of revising is that the unusual residual value with anterior layer sees through system of the present invention operational pattern, does compensation towards the residual value offset direction, with reverse compensation for benchmark when the anterior layer exposure bench.So, checking the current ply measurement data of lot number X when having compensated again after expose, shown in the C point, will be a very little value, and promptly the residual value of anterior layer obtains effective compensation and obtains good overlapping quality after computing of the present invention.This shows that little shadow parameter control method of the present invention can effectively remedy the exposure result's of anterior layer disappearance.
Below describe little shadow parameter feedback system of the present invention in detail.Please refer to Fig. 3 C, Fig. 3 C is little shadow parameter feedback system of the present invention.
Exposure bench 118 can be stepper (stepper) or exposure scanning machine (scanner), it for example is the exposure scanning machine (scanner) of Canon label (model ES3), utilize a collection of semiconductor wafer that has scribbled photoresistance of automatic transmission system transmission to be loaded into this exposure bench 118, to carry out the predetermined layer exposure of (or working as anterior layer).
Need to carry out alignment procedure before the exposure, this registration mechanism is by setting up coordinate in the alignment mark that designs in the mask (alignment mark) position, utilize this coordinate corresponding on the wafer of desire exposure to determine this batch wafer need compensate the alignment offset vector of (offset or compensate), and then determine this batch wafer to work as correspondence position best between anterior layer (current layer) photoresistance pattern and anterior layer (pre layer) alignment mark (alignment mark) with acquisition, and then expose in the optimum position of wafer seat stand system.
The Exposure mode of exposure bench 118 is to feed specific gas produces different wave length to carry out provocative reaction photon with the laser generator, again via filter with specific wavelength, for example the KrF-248nm of deep UV (ultraviolet light) (DUV) or ArF-193nm light source are collected with detector and are formed required exposure light source, this light source has meticulous quality by dozens of lens (lens) pass through exposed mask through repeated multiple times ground optically focused and astigmatic step with the light sources transmit of protoplasm, and exposure image is in wafer surface with the mode irradiates light resistance layer of projection mask patterning.
How the exposure parameter of exposure bench 118 determines, does not temporarily explain at this, can illustrate in detail after a while.
Afterwards, a collection of wafer that has exposed will be transmitted and be loaded into the measurement board, and for example the overlapping measurement board (overlay metrology) 200 of a tool white light (broad band) light source carries out overlapping measurement (overlay measurement).Generally speaking, will be by the design rule (design rule) of integrated circuit and make the overlapping demand (or specification) of necessary requirement between each layer of front and back of this product according to different product and grade (generation), wherein the specification of this formulation also must consider to produce and measure error (error) or its processing limit of board, (it comprises the analytic ability of photoresistance or photosensitive material to the treatment characteristic of material, the degree of accuracy of mask size, exposure light source is through lens (lens) and photoresistance, medium such as mask and image in photoresistance skew (resist bias) on the wafer, etching skew factors such as (etching bias) is added in mask skew (mask bias)) and consider optical approximate effect (proximity effect) etc. to determine the overlapping specification of this layer, it is a target with the best electric characteristics of reaching assembly finally.And the quality of this overlapping quality is except the processing factor of wafer itself, and the aligning precision in the exposure sources is primary for the overlapping quality of decision.The purpose of measuring is kept best correspondence position for obtaining when between the photoresistance pattern of anterior layer (current layer) and anterior layer (prelayer) alignment mark, is guaranteed so that work as the overlapping quality of the circuit pattern between anterior layer and anterior layer.Common practices, consider based on design rule (design rule), the aligning tree (alignment tree) of each interlayer that goes out by an Analysis of Nested Design, with decision respectively when anterior layer expose again behind the anterior layer alignment mark (alignment mark) that should aim at, front and back ply quality after the exposure has a specification, be in overlapping measurement board 200, to set up other overlapping process of measurement of each layer at other overlapping mark of each layer on the mask (overlay mark) coordinate in the mode of sequencing, aim at quality with the front and back layer of monitoring exposure bench by original design.
Then, see through automation data transmission interface (the equipmentautomation user interface) S100 of overlapping measuring machine you, computer information system (CIM) for example, the overlapping measurement data 300 that this batch measured gained is converted to one can be by measuring the data that board spreads out of.
Then, whether exceed overlapping off-set value (the overlay shift of setting by the overlapping offset data control of little shadow parameter feedback system software with the overlapping measurement data 300 of this pen of interpretation; Nm) specification S200.If exceed above-mentioned overlapping skew specification, the exposure result who represents 300 pairing batches of wafers of this overlapping measurement data is unacceptable fully, step of exposure should be reformed, so this overlapping measurement data 300 is cancelled and this batch wafer is handled with (rework) the program S300 that reforms.And, under this situation, also should require the slip-stick artist to check exposure bench 118 whether problem is arranged, or processing have any unusual.
If this overlapping measurement data 300 do not exceed specification, represent that this batch wafer exposure result can also accept, then check and see whether this overlapping measurement data 300 is unusual.Whether exceed the overlapping residual value (residue of setting with the overlapping residual value in the overlapping measurement data 300 of this pen of interpretation with the overlapping residual value data of little shadow parameter feedback system control software; Ppm) specification S400.If do not exceed specification, represent that this batch wafer exposure result is pretty good, then directly this measurement data 300 is thrown into data database (database) 400.If exceed above-mentioned overlapping residual value specification, can accept though then represent this overlapping measurement data 300, some is unusual, therefore, the lot number (lot ID) of this batch wafer is extracted in little shadow parameter feedback system, and is labeled as " unusually " and criticizes S500.And this " unusually " mark and overlapping measurement data 300 can be thrown into data database (database) 400 at last together.
After step S200 determined that this batch wafer exposure result can also accept, this batch wafer just can then carry out follow-up processing such as ion implantation, etching etc.
A collection of wafer is through after the follow-up processing, probably the step of exposure that still will return to carry out another time.For example, well-known, on the treatment scheme, the M0 layer is after the GC layer, and the GC layer is again after the DT layer.Below supposition, a collection of wafer X has gone through the exposure and the data collection step of DT layer and GC layer according to foregoing flow process, and relevant etching or ion implantation processing, enter the exposure bench 118 among Fig. 3 C now, wait the exposure of pending M0 layer.Determining method of exposure parameter is as follows.
At first, check whether this batch wafer X has " unusually " mark in the data database (database) 400.If no, represent the exposure result of this batch wafer X at all anterior layers, no matter be DT layer or GC layer, very normal all.Therefore, merely with shadow parameter feedback system operational pattern (the horizontal PFBS mode) S600 that laterally declines, cooperate nearest several batches after the pairing bench history data of anterior layer (tool history information) (error that also comprises overlapping measurement board) is done computing, to be transferred to automation data transmission interface S100 again, come exposure bench 118 is done feedback compensation the exposure parameter of decision exposure bench 118.So-called transverse type feedback operational pattern is that a kind of reference is criticized the aliasing error between batch (lot tolot), and the benchmark of its reference reaches the degree of stability of handling when anterior layer for each batch wafer pairing board in when anterior layer the time.In other words, the overlapping measurement data historical data that former batches database is stored is overlapped in a subtle way computing in the shadow parameter feedback system mathematic(al) mode, the compensating parameter of computing gained feeds back to exposure sources end corresponding parameters again, surveys machine control sheet required time and former material consumption (for example photoresistance, HMDS, developer solution etc.) in the past to save.With several batches, for example first three batch wafer is getting a statistics mean value when the overlapping measurement data of anterior layer by the operational pattern of little shadow parameter feedback system (PFBS), with reference to the overlapping movement tendency of this assembly average to determine this batch wafer in optimum exposure alignment parameter when anterior layer.This shadow parameter feedback system that laterally declines also comprises decision optimum exposure (exposure dose) parameter with the critical dimension value (CD) of control when anterior layer.
If in data database (database) 400, this batch wafer X has " unusually " mark, the expression, at a certain anterior layer, may be DT layer or GC layer one of them, overlapping measurement data after the exposure of this moment, though do not exceed specification, have the residual value amount excessive unusually.So, be transferred to automation data transmission interface S100 after just doing computing, again exposure bench 118 done feedback compensation, the M0 layer exposure parameter of decision exposure bench 118 with comprehensive operational pattern (H.+V.PFBS mode) S700.Comprehensive operational pattern (H.+V.PFBS mode) S700 has comprised laterally decline the shadow parameter feedback system operational pattern (horizontal PFBS mode) and the shadow parameter feedback system operational pattern (verticalPFBS mode) that vertically declines.
The shadow parameter that laterally declines feedback system operational pattern was explained, did not repeat them here.
So-called vertically formula feedback operational pattern is a kind of historical data with reference to this batch wafer X, the benchmark of its reference be with when anterior layer N (this example is the M0 layer) be benchmark, collecting all anterior layer 1-(N-1) (this example is DT layer and GC layer) has all anterior layers of unusual overlapping residual value, (comprising: expose to the sun and penetrate the magnification error (C-Mag-X) of unit (shot or field) at directions X at the aligned data in the overlapping measurement data, expose to the sun and penetrate the magnification error (C-Mag-Y) of unit in the Y direction, expose to the sun and penetrate the rotation error (C-Rot-X) of unit at directions X, expose to the sun and penetrate the rotation error (C-Rot-X) of unit in the Y direction) etc. ten exposure alignment parameters) do compensation.At this, with the expression formula shadow parameter feedback system of representing as an example vertically to decline.
PPS wherein
N (V)Be the output valve of the shadow parameter feedback system that vertically declines, A
iBe constant term, α
iBe the overlapping residual value of i layer,
Be α
iProportion in this expression formula (weight).Work as α
iAbsolute value＜k
iThe time (k
iBe the residual value specification of i layer), A then
i=0; Otherwise, work as α
iAbsolute value＞k
iThe time, A then
i=1.Simple, A
i(α
i) the overlapping residual value (α of expression mat woven of fine bamboo strips i layer
i) absolute value must arrive to a certain degree the overlapping residual value (α of i layer
i) just can be put into consideration.What another need be considered is, the shadow parameter that vertically declines feedback system can only be considered " unusually " layer after taking place, because have only the anterior layer of " unusually " can have influence on instantly this one deck.By this, accelerating its data grasps and arithmetic speed.For example,
Layer before taking place for " unusually " all is 0, and " unusually " after taking place layer be not 0.In this example, if this wafer X just is marked as " unusually " at the DT layer, that
And
Can not 0.But, if this batch wafer X just is marked as " unusually " at the GC layer, then
Should be 0 and
Not 0.
The output valve of supposing the shadow parameter feedback system that laterally declines is PPS
N (H), the output PPS of comprehensive operational pattern S700 (being called for short H.+V.PFBS)
N (H+V), can be PPS
N (H)And PPS
N (V)Composite function or simply both additions.The exposure parameter of exposure bench is just according to PPS
N (H+V)Be updated.
Ten overlapped data comprise directions X skew (X-shft), Y direction skew (Y-shft), wafer is at the magnification error (W-Mag-X) of directions X, wafer is at the magnification error (W-Mag-Y) of Y direction, wafer is in the rotation error (W-Rot-X) of directions X, wafer is in the rotation error (W-Rot-Y) of Y direction, expose to the sun and penetrate the magnification error (C-Mag-X) of unit at directions X, expose to the sun and penetrate the magnification error (C-Mag-Y) of unit in the Y direction, expose to the sun and penetrate the unit in the rotation error (C-Rot-X) of directions X and expose to the sun and penetrate the rotation error (C-Rot-X) of unit in the Y direction.These ten overlapped data can be brought the input data as vertically decline the shadow parameter feedback system and the shadow parameter feedback system that laterally declines.
Described as prior art, the unusual exposure result of anterior layer can take place in known little shadow parameter control technology, can cause the exposure result of current fault mistake, also abnormal exposure result who has influenced when follow-up batch of chip of anterior layer.Little shadow parameter control technology of the present invention can both effectively solve above problem.
Though the present invention with preferred embodiment openly as above, yet it is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention, change and retouching when doing, so protection scope of the present invention is with being as the criterion that appended claim defines.
Claims (18)
1. a little shadow parameter feedback system comprises
Database includes:
A collection of base history data comprises measurement data after the exposure of at least one anterior layer, corresponding predetermined a collection of substrate; And
Bench history data comprises at least one exposure back measurement data of predetermined layer in the processing, a collection of substrate after the corresponding exposure; And
Exposure bench, corresponding with this bench history data, so that this predetermined batch of substrate exposed, at least one exposure parameter of this exposure bench is to feed back renewal according to this batch base history data and this bench history data.
2. little shadow parameter feedback system as claimed in claim 1, wherein this substrate can be wafer, display base plate, optical module substrate, printed circuit board (PCB) or other material that utilizes exposure-processed to finish.
3. little shadow parameter feedback system as claimed in claim 1, wherein this exposure bench is stepper or exposure scanning machine.
4. little shadow parameter feedback system as claimed in claim 1, this little shadow parameter feedback system includes measuring equipment in addition, in order to measurement data after the exposure of measurement data and this predetermined layer after the exposure that produces this anterior layer.
5. little shadow parameter feedback system as claimed in claim 4, wherein this measuring equipment comprises overlapping measuring equipment, to measure the overlapping off-set value after exposure between this anterior layer and this predetermined layer.
6. little shadow parameter feedback system as claimed in claim 4, wherein this measuring equipment also comprises critical dimension measurement equipment, to measure the critical dimension value of this predetermined layer after exposure.
7. a little shadow parameter control method comprises the following steps:
A collection of base history data is provided, comprises measurement data after the exposure of at least one anterior layer, corresponding predetermined a collection of substrate;
The bench history data of exposure bench is provided, comprises at least one exposure back measurement data of the predetermined layer in the processing, a collection of substrate after the corresponding exposure; And
According to this batch base history data and this bench history data, upgrade at least one exposure parameter of this exposure bench, so that this predetermined batch substrate is exposed.
8. little shadow parameter control method as claimed in claim 7, wherein this exposure parameter is to comprise the exposing substrate alignment parameter of this batch substrate and the unit of penetrating of exposing to the sun (shot or field) exposure alignment parameter.
9. little shadow parameter control method as claimed in claim 7, wherein this exposure parameter also comprises the exposure parameter of this batch substrate.
10. little shadow parameter control method as claimed in claim 7, wherein this measurement data is overlapping measurement data.
11. little shadow parameter control method as claimed in claim 7, wherein this measurement data also comprises the critical dimension measurement data.
12. little shadow parameter control method as claimed in claim 7, wherein this overlapping measurement data comprises the overlapping off-set value of X and Y direction at least.
13. little shadow parameter control method as claimed in claim 7, wherein this exposure bench is stepper or exposure scanning machine.
14. little shadow parameter control method as claimed in claim 7, wherein the historical data of this batch substrate is the residual value that comprises this batch substrate anterior layer, this residual value be defined as after linearity compensation can't compensate the random coefficient that eliminates.
15. little shadow parameter control method as claimed in claim 7 wherein according to the pairing overlapping measurement data of this batch base history data with the mathematic(al) representation that determines the feedback shift value that this exposure bench should compensate in this predetermined layer is:
α wherein
iBe the residual value of i layer,
Be the proportion of i layer, A
iSystem is with α
iFor the step function (step function) of variable, work as α
iDuring absolute value＜k, A
i=0; Work as α
iDuring absolute value＞k, A
i=1.
16. little shadow parameter control method as claimed in claim 7, wherein this bench history data is to comprise overlapping measurement data after the exposure of plural number batch substrate.
17. little shadow parameter control method as claimed in claim 7, wherein, when upgrading at least one exposure parameter of this exposure bench, if measurement data is less than a particular value after the exposure of this anterior layer, measurement data is not just listed consideration in after the exposure of this anterior layer.
18. little shadow parameter control method as claimed in claim 7, wherein this substrate can be wafer, display base plate, optical module substrate, printed circuit board (PCB) or other material that utilizes exposure-processed to finish.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7871745B2 (en) | 2007-12-27 | 2011-01-18 | United Microelectronics Corp. | Exposure method |
| CN101493655B (en) * | 2008-01-21 | 2011-07-20 | 联华电子股份有限公司 | Exposure method |
| CN102540740A (en) * | 2010-12-22 | 2012-07-04 | 无锡华润上华半导体有限公司 | Photoetching method and energy feedback system |
| CN103365102A (en) * | 2012-04-01 | 2013-10-23 | 无锡华润上华科技有限公司 | Photoetching system and method for automatically acquiring photoetching parameters |
| CN109994393A (en) * | 2017-12-29 | 2019-07-09 | 长鑫存储技术有限公司 | Calculation method, device and the equipment of measurement point offset |
| CN111580345A (en) * | 2019-02-18 | 2020-08-25 | 长鑫存储技术有限公司 | Photoetching feedback system and method |
-
2004
- 2004-01-19 CN CN 200410002713 patent/CN1648774A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7871745B2 (en) | 2007-12-27 | 2011-01-18 | United Microelectronics Corp. | Exposure method |
| CN101493655B (en) * | 2008-01-21 | 2011-07-20 | 联华电子股份有限公司 | Exposure method |
| CN102540740A (en) * | 2010-12-22 | 2012-07-04 | 无锡华润上华半导体有限公司 | Photoetching method and energy feedback system |
| CN103365102A (en) * | 2012-04-01 | 2013-10-23 | 无锡华润上华科技有限公司 | Photoetching system and method for automatically acquiring photoetching parameters |
| CN103365102B (en) * | 2012-04-01 | 2015-07-01 | 无锡华润上华科技有限公司 | Photoetching system and method for automatically acquiring photoetching parameters |
| CN109994393A (en) * | 2017-12-29 | 2019-07-09 | 长鑫存储技术有限公司 | Calculation method, device and the equipment of measurement point offset |
| CN109994393B (en) * | 2017-12-29 | 2021-07-13 | 长鑫存储技术有限公司 | Method, device and equipment for calculating compensation value of measuring point |
| CN111580345A (en) * | 2019-02-18 | 2020-08-25 | 长鑫存储技术有限公司 | Photoetching feedback system and method |
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