CN102540740A - Photoetching method and energy feedback system - Google Patents
Photoetching method and energy feedback system Download PDFInfo
- Publication number
- CN102540740A CN102540740A CN2010106019126A CN201010601912A CN102540740A CN 102540740 A CN102540740 A CN 102540740A CN 2010106019126 A CN2010106019126 A CN 2010106019126A CN 201010601912 A CN201010601912 A CN 201010601912A CN 102540740 A CN102540740 A CN 102540740A
- Authority
- CN
- China
- Prior art keywords
- photoetching
- parameter
- exposure
- feedback system
- energy feedback
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The embodiment of the invention discloses a photoetching method and an energy feedback system. The photoetching method comprises the following steps that: data connection is established between the energy feedback system and a photoetching parameter set in a photoetching flow; the energy feedback system acquires the photoetching parameter set in the photoetching flow through the data connection; the energy feedback system calculates an exposure parameter according to the acquired photoetching parameter; and the energy feedback system outputs the exposure parameter to exposure equipment. By the technical scheme, the photoetching parameter set in the photoetching flow can be timely and automatically acquired, so that the exposure equipment can timely perform exposure by using the exposure parameter matched with photoetching. In addition, by the method, the exposure parameter can be automatically calculated and regulated without manual operation, so that exposure parameter calculation or input errors caused by the manual operation can be avoided.
Description
Technical field:
The present invention relates to the semiconductor device processing technology field, relate in particular to a kind of photoetching method and a kind of Energy Feedback System.
Background technology:
Since semiconductor fabrication produced, the development of photoetching process was the main drive of integrated circuit fabrication process development always.The essence of photoetching process is through steps such as a series of chemical reaction and physical etchings, the figure on the mask plate is delivered on semiconductor wafer surface or the dielectric layer, to form effective graphical window, functional graphic or lines.Photoetching process can define the critical size (CD) of semiconductor devices as a kind of Micrometer-Nanometer Processing Technology of precision.Photoetching process mainly comprises: operations such as semiconductor wafer surface cleaning, drying, linging, spin coating photoresist, soft baking, aligning exposure, back baking, development, baking firmly, etching, detection.
In the lithography step of actual production; Often need be according to the critical size of the relevant level of different demands adjustment; At this moment, managerial personnel can change the photoetching flow process and change the target critical dimension of setting in the photoetching flow process, notify the photoetching slip-stick artist adjusted target critical dimension simultaneously; The photoetching slip-stick artist uses critical size Energy Feedback System (R2R); According to the corresponding relation of exposure energy and critical size, calculate the new exposure energy that matees with target critical dimension, and the control exposure sources uses new exposure energy to make public.
Yet there is following defective in above-mentioned photoetching process: Energy Feedback System can not obtain adjusted photoetching parameter timely, makes exposure sources can not use the exposure parameter that matees with photoetching timely and makes public, and therefore, can influence the effect of exposure.In addition; In the existing photoetching process, the needs calculating manually and the exposure parameter of adjustment and target critical dimension coupling, the exposure parameter that possibly exist human factor to cause calculates or the typing mistake; And then cause product because of OOC (Out of control; Exceed control scope or OOS (Out of spec, overshoot scope) and do over again, even scrap.
Summary of the invention
For solving the problems of the technologies described above; The object of the present invention is to provide a kind of photoetching method and a kind of Energy Feedback System,, make exposure sources can use the exposure parameter that matees with target critical dimension timely and make public so that Energy Feedback System can obtain adjusted target critical dimension timely; Simultaneously; Realize calculating automatically and the adjustment exposure parameter, need not manually-operated, the exposure parameter of avoiding manually-operated to cause calculates or the typing mistake.
For addressing the above problem, the embodiment of the invention provides following technical scheme:
A kind of photoetching method comprises:
The data of setting up the photoetching parameter of setting in Energy Feedback System and the photoetching flow process are connected;
Energy Feedback System connects through said data obtains the photoetching parameter of setting in the photoetching flow process;
Energy Feedback System obtains exposure parameter according to the photoetching calculation of parameter that gets access to;
Energy Feedback System is exported said exposure parameter to exposure sources.
Preferably, the photoetching parameter of said setting comprises: the critical size of photoetching.
Preferably, said exposure parameter comprises the critical size and the exposure energy of photoetching.
Preferably, the photoetching calculation of parameter that said basis gets access to obtains exposure parameter, comprising:
Variation according to the critical size of photoetching calculates new exposure parameter.
Preferably, said method also comprises
Exposure sources receives said exposure parameter, and makes public according to exposure parameter.
The embodiment of the invention also provides a kind of Energy Feedback System, comprising:
Connect and to set up the unit, the data that are used for setting up the photoetching parameter that Energy Feedback System and photoetching flow process set are connected;
Parameter acquiring unit is used for obtaining the photoetching parameter that the photoetching flow process is set through said data connection;
Parameter calculation unit is used for obtaining exposure parameter according to the photoetching calculation of parameter that gets access to;
The parameter output unit is used for exporting said exposure parameter to exposure sources.
Preferably, the photoetching parameter of said setting comprises: the critical size of photoetching.
Preferably, said exposure parameter comprises the critical size and the exposure energy of photoetching.
Preferably, said parameter calculation unit is used for the variation according to the critical size of photoetching, calculates new exposure parameter.
Compared with prior art, technique scheme has the following advantages:
The technical scheme that the embodiment of the invention provided through revising Energy Feedback System, makes it can in time get access to the photoetching parameter of setting in the photoetching flow process automatically, makes exposure sources can use the exposure parameter that matees with photoetching timely and makes public.This method can realize calculating automatically and the adjustment exposure parameter simultaneously, need not to operate manually, and the exposure parameter that can avoid manually-operated to cause calculates or the typing mistake.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
The photoetching method schematic flow sheet that Fig. 1 provides for embodiment one;
The structural representation of the Energy Feedback System that Fig. 2 provides for embodiment two.
Embodiment
Said as the background technology part; There is following defective in existing photoetching process: Energy Feedback System can not obtain adjusted target critical dimension timely; Making exposure sources can not use the exposure parameter that matees with target critical dimension timely makes public; Therefore, can influence the effect of exposure.In addition, in the existing photoetching process, the needs calculating manually and the exposure parameter of adjustment and target critical dimension coupling, the exposure parameter that possibly exist human factor to cause calculates or the typing mistake, and then causes product to do over again, even scraps.Cause the reason of above-mentioned defective mainly to be, in the existing technology, the critical size setting and the exposure energy setting of change Energy Feedback System that must be artificial.
Therefore, the embodiment of the invention provides a kind of photoetching method, and this method may further comprise the steps:
The data of setting up the photoetching parameter of setting in Energy Feedback System and the photoetching flow process are connected;
Energy Feedback System connects through said data obtains the photoetching parameter of setting in the photoetching flow process;
Energy Feedback System obtains exposure parameter according to the photoetching calculation of parameter that gets access to;
Energy Feedback System is exported said exposure parameter to exposure sources.
Corresponding to said method, the embodiment of the invention also provides a kind of Energy Feedback System, it is characterized in that, comprising:
Connect and to set up the unit, the data that are used for setting up the photoetching parameter that Energy Feedback System and photoetching flow process set are connected;
Parameter acquiring unit is used for obtaining the photoetching parameter that the photoetching flow process is set through said data connection;
Parameter calculation unit is used for obtaining exposure parameter according to the photoetching calculation of parameter that gets access to;
The parameter output unit is used for exporting said exposure parameter to exposure sources.
The technical scheme that the embodiment of the invention provided through revising Energy Feedback System, makes it can in time get access to the photoetching parameter of setting in the photoetching flow process automatically, makes exposure sources can use the exposure parameter that matees with photoetching timely and makes public.This method can realize calculating automatically and the adjustment exposure parameter simultaneously, need not to operate manually, and the exposure parameter that can avoid manually-operated to cause calculates or the typing mistake.
It more than is the application's core concept; To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention carried out clear, intactly description, obviously; Described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment among the present invention, those of ordinary skills are not making the every other embodiment that is obtained under the creative work prerequisite, all belong to the scope of the present invention's protection.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
Secondly, the present invention combines synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Embodiment one:
Present embodiment provides a kind of photoetching method, and shown in the photoetching method schematic flow sheet that Fig. 1 provides, this method specifically may further comprise the steps:
Step S101, the data of setting up the photoetching parameter of setting in Energy Feedback System and the photoetching flow process are connected.
Setting up the data purpose of connecting is the photoetching parameter transmission that realizes between Energy Feedback System and the photoetching flow process.
Step S102, Energy Feedback System connects through said data obtains the photoetching parameter of setting in the photoetching flow process.
Its obtain manner can be the change of the parameter of monitoring photoetching in real time, the perhaps regular or irregular photoetching parameter of obtaining.The photoetching parameter of said setting can comprise: the critical size of photoetching.The parameters such as type that can also comprise in addition, photoresist.
Step S103, Energy Feedback System obtains exposure parameter according to the photoetching calculation of parameter that gets access to.
In this step, said exposure parameter can comprise the critical size and the exposure energy of photoetching.In addition, can also comprise parameters such as exposure focal length, time.
The photoetching calculation of parameter that said basis gets access to obtains exposure parameter, can comprise: the variation according to the critical size of photoetching calculates new exposure energy.In this step, can quote the parameter of the target critical dimension of setting in the product photoetching flow process automatically, therefore can promptly and accurately calculate exposure parameters such as exposure energy.
Wherein, the account form of said new exposure energy can for: critical size after new exposure energy equals to upgrade and per unit exposure energy change the product of pairing critical size.
The account form of said new exposure energy can also be calculated by following formula:
Dose
new＝Dose
old+/-(CD
new-CD
old)/E.L.Value；
Wherein, Dose
NewBe new exposure energy, Dose
OldBe former exposure energy, CD
NewBe the critical size after upgrading, CD
OldBe original critical size, E.L.Value changes pairing critical size for the per unit exposure energy.
Step S104, Energy Feedback System is exported said exposure parameter to exposure sources.
Can realize upgrading automatically the exposure parameter of exposure sources in this step
In addition, after step S104, can also comprise:
Step S105, exposure sources receive said exposure parameter, and make public according to exposure parameter.
The photoetching method that present embodiment provides through revising Energy Feedback System, makes it can in time get access to the photoetching parameter of setting in the photoetching flow process automatically, makes exposure sources can use the exposure parameter that matees with photoetching timely and makes public.This method can realize calculating automatically and the adjustment exposure parameter simultaneously, need not to operate manually, and the exposure parameter that can avoid manually-operated to cause calculates or the typing mistake.
Embodiment two:
Corresponding to the method that provides among the embodiment one, present embodiment also provides a kind of Energy Feedback System, and like the system architecture synoptic diagram that Fig. 2 provides, this system comprises:
Connect and to set up unit 201, the data that are used for setting up the photoetching parameter that Energy Feedback System and photoetching flow process set are connected; Connect the photoetching parameter transmission that can realize between Energy Feedback System and the photoetching flow process through said data.
Said exposure parameter can comprise the critical size and the exposure energy of photoetching.In addition, can also comprise parameters such as exposure focal length, time.
Said parameter calculation unit 203 specifically can calculate new exposure energy according to the variation of the critical size of photoetching.Parameter calculation unit 203 can be quoted the parameter of the target critical dimension of setting in the product photoetching flow process automatically, therefore can promptly and accurately calculate exposure parameters such as exposure energy.
Wherein, parameter calculation unit 203 can be calculated new exposure energy through following mode: critical size after new exposure energy equals to upgrade and per unit exposure energy change the product of pairing critical size.
Said parameter calculation unit 203 can also calculate the exposure energy that makes new advances through following formula:
Dose
new＝Dose
old+/-(CD
new-CD
old)/E.L.Value；
Wherein, Dose
NewBe new exposure energy, Dose
OldBe former exposure energy, CD
NewBe the critical size after upgrading, CD
OldBe original critical size, E.L.Value changes pairing critical size for the per unit exposure energy.
Exposure sources can make public according to exposure parameter after receiving said exposure parameter.
The Energy Feedback System that present embodiment provides; Can set up the data that are used for the transmission of photoetching parameter with the photoetching flow process is connected; Make it can in time get access to the photoetching parameter of setting in the photoetching flow process automatically, make exposure sources can use the exposure parameter that matees with photoetching timely and make public.This method can realize calculating automatically and the adjustment exposure parameter simultaneously, need not to operate manually, and the exposure parameter that can avoid manually-operated to cause calculates or the typing mistake.
Various piece adopts the mode of going forward one by one to describe in this instructions, and what each part stressed all is and the difference of other parts that identical similar part is mutually referring to getting final product between the various piece.To the above-mentioned explanation of the disclosed embodiments, make this area professional and technical personnel can realize or use the present invention.Multiple modification to these embodiment will be conspicuous concerning those skilled in the art, and defined General Principle can realize under the situation that does not break away from the spirit or scope of the present invention in other embodiments among this paper.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet and principle disclosed herein and features of novelty the wideest corresponding to scope.
Claims (9)
1. a photoetching method is characterized in that, comprising:
The data of setting up the photoetching parameter of setting in Energy Feedback System and the photoetching flow process are connected;
Energy Feedback System connects through said data obtains the photoetching parameter of setting in the photoetching flow process;
Energy Feedback System obtains exposure parameter according to the photoetching calculation of parameter that gets access to;
Energy Feedback System is exported said exposure parameter to exposure sources.
2. method according to claim 1 is characterized in that:
The photoetching parameter of said setting comprises: the critical size of photoetching.
3. method according to claim 2 is characterized in that:
Said exposure parameter comprises the critical size and the exposure energy of photoetching.
4. method according to claim 3 is characterized in that, the photoetching calculation of parameter that said basis gets access to obtains exposure parameter, comprising:
Variation according to the critical size of photoetching calculates new exposure parameter.
5. according to any described method of claim 1 to 4, it is characterized in that, also comprise
Exposure sources receives said exposure parameter, and makes public according to exposure parameter.
6. an Energy Feedback System is characterized in that, comprising:
Connect and to set up the unit, the data that are used for setting up the photoetching parameter that Energy Feedback System and photoetching flow process set are connected;
Parameter acquiring unit is used for obtaining the photoetching parameter that the photoetching flow process is set through said data connection;
Parameter calculation unit is used for obtaining exposure parameter according to the photoetching calculation of parameter that gets access to;
The parameter output unit is used for exporting said exposure parameter to exposure sources.
7. method according to claim 6 is characterized in that:
The photoetching parameter of said setting comprises: the critical size of photoetching.
8. method according to claim 7 is characterized in that:
Said exposure parameter comprises the critical size and the exposure energy of photoetching.
9. method according to claim 8 is characterized in that:
Said parameter calculation unit, the variation of concrete critical size according to photoetching calculates new exposure parameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106019126A CN102540740A (en) | 2010-12-22 | 2010-12-22 | Photoetching method and energy feedback system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106019126A CN102540740A (en) | 2010-12-22 | 2010-12-22 | Photoetching method and energy feedback system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102540740A true CN102540740A (en) | 2012-07-04 |
Family
ID=46347910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010106019126A Pending CN102540740A (en) | 2010-12-22 | 2010-12-22 | Photoetching method and energy feedback system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102540740A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465345A (en) * | 2014-12-29 | 2015-03-25 | 深圳市华星光电技术有限公司 | Laser crystallization system and crystallization energy control method thereof |
| CN108154672A (en) * | 2018-02-07 | 2018-06-12 | 天津中德应用技术大学 | System and method is configured in a kind of ultrasonic liquid flow meter Automatic parameter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648774A (en) * | 2004-01-19 | 2005-08-03 | 茂德科技股份有限公司 | Micro image parameter feedback system and control method |
| US20060110666A1 (en) * | 2004-11-23 | 2006-05-25 | Sajan Marokkey | Stray light feedback for dose control in semiconductor lithography systems |
| CN101493655A (en) * | 2008-01-21 | 2009-07-29 | 联华电子股份有限公司 | Exposure method |
| CN101727014A (en) * | 2008-10-28 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Photoetching method for controlling characteristic dimension and photoetching system thereof |
-
2010
- 2010-12-22 CN CN2010106019126A patent/CN102540740A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1648774A (en) * | 2004-01-19 | 2005-08-03 | 茂德科技股份有限公司 | Micro image parameter feedback system and control method |
| US20060110666A1 (en) * | 2004-11-23 | 2006-05-25 | Sajan Marokkey | Stray light feedback for dose control in semiconductor lithography systems |
| CN101493655A (en) * | 2008-01-21 | 2009-07-29 | 联华电子股份有限公司 | Exposure method |
| CN101727014A (en) * | 2008-10-28 | 2010-06-09 | 中芯国际集成电路制造(北京)有限公司 | Photoetching method for controlling characteristic dimension and photoetching system thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465345A (en) * | 2014-12-29 | 2015-03-25 | 深圳市华星光电技术有限公司 | Laser crystallization system and crystallization energy control method thereof |
| CN108154672A (en) * | 2018-02-07 | 2018-06-12 | 天津中德应用技术大学 | System and method is configured in a kind of ultrasonic liquid flow meter Automatic parameter |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105223781B (en) | A kind of stepper aligns monitoring method | |
| TW202129225A (en) | Signal-domain adaptation for metrology | |
| US8801948B2 (en) | TFT mask reduction | |
| US20140220786A1 (en) | Methods for optical proximity correction in the design and fabrication of integrated circuits | |
| CN103984210A (en) | Method for realizing hetero-machine matched nested etching on GaAs wafer | |
| CN102540740A (en) | Photoetching method and energy feedback system | |
| CN104812178A (en) | Manufacturing method for circuit board with segmented metal pin | |
| CN106154768B (en) | A kind of ic substrate re-expose method based on mask plate | |
| CN1379443A (en) | Manufacturing method of mask, manufacturing method of mask and semiconductor device using said mask | |
| TWI689789B (en) | Method of predicting performance of a lithographic apparatus, calibration of lithographic apparatus, device manufacturing method | |
| WO2009041306A1 (en) | Method and apparatus for manufacturing semiconductor device and resist material | |
| US8574480B2 (en) | Partial die process for uniform etch loading of imprint wafers | |
| JP2009098467A (en) | Exposure apparatus | |
| CN102566288B (en) | Exposure method and system | |
| CN104701211A (en) | Method for measuring automatic-adjustment casual inspection frequency according to integrated circuit process capability indexes | |
| KR101432844B1 (en) | Methods and arrangement for creating recipes using best-known methods | |
| CN104950569A (en) | Light mask making method, light mask and display making method | |
| CN101943854A (en) | Design method of half-exposure region of half-gray-scale mask plate and manufacture method thereof | |
| US20140082572A1 (en) | Method of generating assistant feature | |
| CN103777460A (en) | Method for improving precision of optical proximity effect correction model | |
| US8875063B2 (en) | Mask layout formation | |
| CN102486605B (en) | Optical proximity correction method of covered shape | |
| CN104779151B (en) | A kind of polycrystalline silicon etching method | |
| KR20110041985A (en) | Semiconductor inter-field dose correction | |
| CN103579058B (en) | A kind of method of multiple batches of continuous operation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120704 |