CN104950569A - Light mask making method, light mask and display making method - Google Patents

Light mask making method, light mask and display making method Download PDF

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Publication number
CN104950569A
CN104950569A CN201510135040.1A CN201510135040A CN104950569A CN 104950569 A CN104950569 A CN 104950569A CN 201510135040 A CN201510135040 A CN 201510135040A CN 104950569 A CN104950569 A CN 104950569A
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Prior art keywords
pattern
transfer printing
photomask
blooming
manufacture method
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CN104950569B (en
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山口昇
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Hoya Corp
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Hoya Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention relates to a light mask making method, wherein the light mask can form a transfer image with high size precision; the invention also provide the light mask and a display making method; the method comprises the steps of patternizing an optical film on a transparent substrate, and has a light mask substrate preparation step, a depicting step, an anti-etching pattern forming step and an optical film patternization step; the depicting step comprises: forming transfer image data of the transfer images; forming monitoring image data for monitoring patterns in depiction. The optical film patternization step comprises a first etching in a preset time, size measurement of the monitoring images, and second etching for the optical film according to the sizes of the monitoring images.

Description

The manufacture method of the manufacture method of photomask, photomask and display device
Technical field
The manufacture method that the present invention relates to photomask and this photomask possessing transfer printing pattern particularly relates to the useful photomask of display device manufacture.In addition, the present invention relates to the manufacture method of the display device using this photomask.
Background technology
Along with the high-precision refinement etc. of the electronic equipment such as display device, the film figure that the photomask for the manufacture being used in them possesses, improves the requirement of better size Control.
Related to this, describe a kind of method of carrying out the size Control of photomask more accurately in patent documentation 1.Namely, following method is described: using Resist patterns as mask to carry out the etching of photomask in patent documentation 1, the photomask that removing is not covered by Resist patterns and after stopping etching, light is irradiated from the inside of substrate, make the resist not being blocked film shading photosensitive, develop, thus grasp the marginal position of photomask, and determine to add etching period.
In addition, in patent documentation 2, describe a kind of manufacture method of photomask of higher, the uneven less gray mask of homogeneity for obtaining shape in repeat patterns region etc.Namely, a kind of manufacture method of following photomask is described: the feature of the manufacture method of this photomask is in patent documentation 2, comprise the scan unit according to the regulation on the direction of scanning (Y-direction) of the head to drawing apparatus, and carrying out in the manufacture method of the photomask of the description operation described to the unit of transfer of the regulation on the direction (X-direction) vertical with direction of scanning, the pattern of above-mentioned photomask comprises repeat patterns, above-mentioned description operation comprises the operation pattern unit comprising same repeat patterns being described respectively to each pattern unit with same transmission condition.
Patent documentation 1: Japanese Unexamined Patent Publication 2010-169750 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2002-244272 publication
For display device (liquid crystal indicator, organic EL (electroluminescence: electroluminescence) display device etc.) required by image quality, lightness, the speed of responsiveness, even power saving performance grade, be in the past be not enhanced with having.In view of this situation, need the transfer printing pattern of the photomask of the manufacture being used in these display device, miniaturization, densification.
When manufacturing display device, carry out utilizing photo-mask process to manufacture the photomask possessing desired transfer printing pattern.That is, the blooming of film forming on transparency carrier forms resist film, and describe at this resist film energy line (laser etc.), and using the Resist patterns that obtains by developing as mask, etching is implemented to blooming.As required, also on above-mentioned blooming, form other blooming, repeat above-mentioned photo-mask process, form final transfer printing pattern thus.Blooming herein comprises and such as carries out the photomask of shading, the semi-transparent film of a part of printing opacity to the exposure light of photomask, or the functional membrane etc. such as the film of phase-shifted, etching block film.
Display device manufacture photomask and semiconductor device manufacture are (general with photomask, while be 5 ~ 6 inches) compare, size comparatively large (such as while be more than 300mm), and there is sizes, so in the etching of blooming, compared with the dry-etching of required vacuum chamber, there is the burden of side's device of application Wet-type etching, operation less, also easily control this advantage.
Its reverse side, comes from this character and also has any problem in Wet-type etching.Generally, there is relative to dry-etching the character of anisotropic etching, and Wet-type etching isotropically carries out character that etch, isotropic etching comparatively by force, therefore, also carries out etching (side etching) from the side of the blooming of etch target.Figure 11 represents that side as the photomask of blooming is by SEM (Scanning Electron Microscope: the scanning electron microscope) photo of the etched state of Wet-type etching.Therefore, the size of the blooming pattern of etching is not necessarily consistent with the size of the Resist patterns becoming etching mask.When the etching implementing the stipulated time, the edge of blooming pattern advances to the inner side of the marginal position of Resist patterns, and becomes the state covered by Resist patterns, so cannot directly measure the size of blooming pattern.Therefore, the more difficult terminal (with reference to Figure 11) determining etching.
In order to reach desired pattern dimension, namely allowing to grasp rate of etch (etch quantity of each unit interval), but only depending on rate of etch, the necessary time deciding to etch is not necessarily effective.Such as, the Resist patterns becoming etching mask when Wet-type etching is subject to the development temperature of resist, the variation of concentration of developer, uneven impact, makes these be always constant very difficult.
And the edge shape of Resist patterns is formed by describing, but understand the thickness of Resist patterns, the surface reflectivity of blooming brings impact to description condition.But the thickness of Resist patterns, the surface reflectivity of blooming are also always steady state value and are not easy.
In other words, the key factor come from beyond the simple rate of etch of blooming and etchant cannot be avoided in the carrying out of etching when carrying out Wet-type etching to blooming, reality, the variation key factor especially caused by resist.
If consider above-mentioned present situation, then in order to carry out the higher patterning of dimensional accuracy, the no matter impact of above-mentioned variation key factor, all grasp to etching end point, accurately etching period (that is, to the etching period needed for the remaining etch quantity of necessity) be useful.
In the method for patent documentation 1, after the etching of photomask starts, stopping etching after the photomask that removing is not covered by Resist patterns, making Resist patterns consistent with the edge of photomask by penetrating from the illumination of the inside, and by grasping this marginal position, decide additional etching period.According to the method, due to the position at the edge of the photomask covered by Resist patterns can be grasped, so there is the additional etch quantity obtaining and need, namely add this effect of etching period.But, the position at the photomask edge under the state stacked with Resist patterns is grasped, exists and be difficult to obtain this undesirable condition of sufficient precision.
But in the display device taking liquid crystal indicator as representative, the above display device with fine structure had the trend of increase in the past.This is the common trend such as thin film transistor (TFT) (TFT) substrate, color filter (black matrix", light separating material, color version), but with in these display device, the fineness of image, the speed, lightness, power saving etc. of action require relation.
Conform to above-mentioned, (Critical Dimension: following, uses with the meaning of pattern lines width the CD of the transfer printing pattern that display device manufacture photomask has.Hereinafter also referred to as " CD value ".) accuracy requirement also become strict.So far, in order to improve CD precision, make great efforts the deviation of the CD value suppressed in each operation (description, resist development, etching etc.) needed for photomask manufacture.
But in nearest display device, expect the line and space pattern etc. of the line width part such as comprising less than 2 μm, the surplus for the transferability in transfer printing body (base plate of liquid crystal panel etc.) transfer printing also becomes extremely little.
Such as, expect the CD precision of transfer printing pattern to be set to desired value ± below 50nm, and then be set to desired value ± below 20nm.
In order to meet this requirement, the deviation of the CD value in the face in suppressing transfer printing pattern to be formed, and the absolute value of CD value is with must making bias free by the size of design.In other words, the central value of the CD value of the transfer printing pattern of formation needs precision consistent with desired value well.
Summary of the invention
Therefore, the object of the invention is to obtain a kind of manufacture method that can form the photomask of the high transfer printing pattern of dimensional accuracy.
Above-mentioned problem by the isotropic etching of the manufacture method of photomask, stops etching and can solve while the CD central value of the blooming size be patterned reaches desired value.Therefore, the detection (end point determination) carrying out the opportunity stopped etching exactly is most important.
Therefore, in order to solve above-mentioned problem, the present invention has following formation.The present invention be using following formation 1 ~ 12 as the manufacture method of the photomask of feature, using following formation 13,14 as the photomask of feature and using the manufacture method of following formation 15,16 as the display device of feature.
(forming 1)
Formation 1 of the present invention is the manufacture method possessing photomask blooming being carried out to the transfer printing pattern of patterning gained on the transparent substrate, it is characterized in that having: the operation preparing to have the photomask base plate of above-mentioned blooming and resist film on above-mentioned transparency carrier; Use drawing apparatus, for above-mentioned resist film, the pattern data based on regulation carries out the description operation described; The Resist patterns formation process of Resist patterns is formed by developing to above-mentioned resist film; And by using above-mentioned Resist patterns as mask, above-mentioned blooming is etched to the blooming patterning operation forming blooming pattern,
In above-mentioned description operation, use and comprise for the formation of the transfer printing pattern data of the above-mentioned transfer printing pattern wanting to obtain and describe for the formation of the above-mentioned pattern data of the monitoring pattern data of the monitoring pattern of dimensional measurement,
Above-mentioned blooming patterning operation comprises: the 1st etching above-mentioned blooming being implemented to the etching of stipulated time; The dimensional measurement of above-mentioned monitoring pattern; And etch the 2nd of the etching that above-mentioned blooming enforcement adds the based on the size of the above-mentioned monitoring pattern obtained by above-mentioned dimensional measurement,
Above-mentioned monitoring pattern comprise using above-mentioned transfer printing pattern at least partially as CD guarantee portion time, the CD measurement section of the size identical with above-mentioned CD guarantee portion.
(forming 2)
The manufacture method of the photomask according to formation 1, the feature of formation 2 of the present invention is, the above-mentioned CD measurement section that above-mentioned monitoring pattern comprises is depicted as with the description condition identical with above-mentioned CD guarantee portion, above-mentioned description condition comprises at least one that select from the scanning position of the arrangement of the light beam of the X-direction of the energy beam being used in description and Y-direction, and above-mentioned dimensional measurement is carried out above-mentioned CD measurement section.
(forming 3)
The manufacture method of the photomask according to formation 1 or 2, the feature of formation 3 of the present invention is, above-mentioned 1st etching and above-mentioned 2nd etching are Wet-type etchings.
(forming 4)
The manufacture method of the photomask according to any one in formation 1 ~ 3, the feature of formation 4 of the present invention is, when above-mentioned dimensional measurement, will be formed with an above-mentioned resist film removing part for the part of above-mentioned monitoring pattern.
(forming 5)
The manufacture method of the photomask according to any one in formation 1 ~ 4, the feature of formation 5 of the present invention is, on above-mentioned transparency carrier, and outside the region of above-mentioned transfer printing pattern, configure multiple above-mentioned monitoring pattern, the plurality of above-mentioned monitoring pattern has above-mentioned CD measurement section respectively.
(forming 6)
The manufacture method of the photomask according to any one in formation 1 ~ 5, the feature of formation 6 of the present invention is, above-mentioned transfer printing pattern comprises the repeating part of recurring unit's pattern, and above-mentioned monitoring pattern comprises the repeating part of the unit cell pattern of the equal part of the size that repeats above-mentioned unit cell pattern that above-mentioned transfer printing pattern comprises and have above-mentioned X-direction or above-mentioned Y-direction.
(forming 7)
The manufacture method of the photomask according to any one in formation 1 ~ 6, the feature of formation 7 of the present invention is, above-mentioned transfer printing pattern comprises the above-mentioned repeating part repeating above-mentioned unit cell pattern, and above-mentioned monitoring pattern comprises the repeating part of the repetition above-mentioned unit cell pattern identical with the unit cell pattern that above-mentioned transfer printing pattern comprises.
(forming 8)
The manufacture method of the photomask according to any one in formation 1 ~ 7, the feature of formation 8 of the present invention is, above-mentioned description operation has the description repetition period of the X-direction repeating the above-mentioned description condition specified in above-mentioned X-direction, and above-mentioned light beam arrangement repeated according to the description repetition period of above-mentioned X-direction.
(forming 9)
The manufacture method of the photomask according to any one in formation 1 ~ 7, the feature of formation 9 of the present invention is, above-mentioned description operation has the description repetition period of the Y-direction repeating the above-mentioned description condition specified in above-mentioned Y-direction, and above-mentioned scanning position repeated according to the description repetition period of above-mentioned Y-direction.
(forming 10)
The manufacture method of the photomask according to formation 8, the feature of formation 10 of the present invention is, the lowest common multiple of the spacing of the description repetition period of the above-mentioned X-direction in above-mentioned description operation and the above-mentioned X-direction of above-mentioned unit cell pattern is the integer of less than 20.
(forming 11)
The manufacture method of the photomask according to formation 9, the feature of formation 11 of the present invention is, the lowest common multiple of the spacing of the description repetition period of the above-mentioned Y-direction in above-mentioned description operation and the above-mentioned Y-direction of above-mentioned unit cell pattern is the integer of less than 20.
(forming 12)
The manufacture method of the photomask according to any one in formation 1 ~ 11, the feature of formation 12 of the present invention is, above-mentioned transfer printing pattern is the pattern of display device manufacture.
(forming 13)
Formation 13 of the present invention is a kind of photomasks, this photomask possesses on the transparent substrate and carries out transfer printing pattern that patterning obtains and multiple monitoring pattern to blooming, it is characterized in that, above-mentioned monitoring pattern is arranged on outside the region of above-mentioned transfer printing pattern, using above-mentioned transfer printing pattern at least partially as CD guarantee portion time, above-mentioned monitoring pattern comprises the part of the size identical with above-mentioned CD guarantee portion.
(forming 14)
Photomask according to formation 13, the feature of formation 14 of the present invention is, the part of the size identical with above-mentioned CD guarantee portion that above-mentioned monitoring pattern comprises is formed with the description condition identical with above-mentioned CD guarantee portion, above-mentioned description condition be the energy beam of the description being used in above-mentioned transfer printing pattern, the scanning position of the arrangement of the light beam of X-direction or Y-direction at least one.
(forming 15)
Formation 15 of the present invention is manufacture methods of a kind of display device, it is characterized in that, has the operation of the photomask prepared by forming the manufacture method gained described in any one in 1 ~ 12; And use exposure device, the transfer printing pattern had by above-mentioned photomask is transferred to the operation on transfer printing body.
(forming 16)
Formation 16 of the present invention is manufacture methods of display device, it is characterized in that, has the operation of the photomask described in composition of preparation 13 or 14; And use exposure device, the transfer printing pattern had by above-mentioned photomask is transferred to the operation on transfer printing body.
According to the manufacture method of photomask of the present invention, the transfer printing pattern that dimensional accuracy is higher can be formed.
Accompanying drawing explanation
Fig. 1 is an example (right side) of the diagrammatic cross-section of the passing of the state of blooming on the transparency carrier in the manufacture method flow process (left side) of a mode of the manufacture method representing photomask of the present invention and each operation of manufacture method flow process.
Fig. 2 represents for obtaining additional etching period, CD relative to the figure of an example of the variable quantity of etching period.
Fig. 3 (a) is formed in the example of the schematic diagram of the pattern on the first type surface of the photomask of display device manufacture.B () is the enlarged diagram of the transfer printing pattern in the pattern shown in (a).C () is enlarged diagram in the pattern shown in (a), monitoring pattern.
Fig. 4 (a) be formed in pattern on the first type surface of the photomask of display device manufacture, the example of the schematic diagram of alternate manner.B () is enlarged diagram in the pattern shown in (a), transfer printing pattern.C () is the enlarged diagram of the monitoring pattern in the pattern shown in (a).
Fig. 5 (a) be formed in pattern on the first type surface of the photomask of display device manufacture, the example of the schematic diagram of alternate manner.B () is the enlarged diagram of the transfer printing pattern in the pattern shown in (a).C () is enlarged diagram in the pattern shown in (a), monitoring pattern.
Fig. 6 (a) be pattern arrangement on the first type surface of the photomask being formed in display device manufacture example of schematic diagram of mode of OPC (optical near-correction).B () is the enlarged diagram of the transfer printing pattern in the pattern shown in (a).C () is the enlarged diagram of the monitoring pattern in the pattern shown in (a).
Fig. 7 is the schematic diagram of an example of the action representing the laser beam of irradiating from the imaging head laser drawing apparatus.
Fig. 8 is the schematic diagram of an example of the action representing the laser beam of irradiating from the imaging head of laser drawing apparatus.
Fig. 9 is the schematic diagram of the example representing the method that the line width (CD) the Y-direction of the laser beam of irradiating from the imaging head of laser drawing apparatus controls.
Figure 10 is the schematic diagram that the CD (line width) to the pattern in X-direction determines according to the exposure intensity of the light of the laser beam (light velocity diameter A μm) of irradiating from the imaging head of laser drawing apparatus to be described.
Figure 11 represents that side as the photomask of blooming is by the SEM photo of the etched state of Wet-type etching.
Reference numeral explanation
1 ... transparency carrier; 2 ... blooming; 2a ... blooming pattern (transfer printing pattern); 2b ... blooming pattern (monitoring pattern); 3 ... resist film; 3a ... Resist patterns (forming the Resist patterns of the part of transfer printing pattern); 3b ... Resist patterns (forming the Resist patterns of the part of monitoring pattern); 6 ... laser beam
Embodiment
The present invention transparency carrier possesses carry out patterning to blooming and the manufacture method of the photomask of the transfer printing pattern obtained.The manufacture method of photomask of the present invention have the operation preparing to have the photomask base plate of above-mentioned blooming and resist film on above-mentioned transparency carrier, the description operation using drawing apparatus to describe based on the pattern data of regulation above-mentioned resist film, the Resist patterns formation process forming Resist patterns by developing to above-mentioned resist film and using above-mentioned Resist patterns as mask; and above-mentioned blooming is etched, thus form the blooming patterning operation that blooming pattern obtains above-mentioned transfer printing pattern.In above-mentioned description operation, the above-mentioned pattern data of the monitoring pattern data of the monitoring pattern comprised for the formation of dimensional measurement is used to describe together with the transfer printing pattern data for the formation of the above-mentioned transfer printing pattern wanting to obtain.Above-mentioned blooming patterning operation comprises the 1st etching and the 2nd etching, the etching of stipulated time is implemented in 1st etching to above-mentioned blooming, the etching added is implemented in the 2nd etching to above-mentioned blooming based on the dimensional measurement of above-mentioned monitoring pattern and the size of above-mentioned monitoring pattern that obtained by above-mentioned dimensional measurement.Above-mentioned monitoring pattern comprise using above-mentioned transfer printing pattern at least partially as CD guarantee portion time, the size identical with above-mentioned CD guarantee portion and the CD measurement section depicted with the description condition identical with above-mentioned CD guarantee portion.Above-mentioned description condition comprise from the X-direction of the energy beam being used in description bundle arrangement and Y-direction scanning position select at least one.Above-mentioned dimensional measurement is carried out for above-mentioned CD measurement section.
Use the manufacture method flow process shown in Fig. 1, a mode of the manufacture method of photomask of the present invention is described.Illustrate that on the right side of the flow process shown in Fig. 1 the state of the blooming on the transparency carrier in each operation is as diagrammatic cross-section.In figure, symbol 1 represents transparency carrier, and symbol 2 represents blooming, and symbol 2a and symbol 2b represents blooming pattern, and symbol 3 represents resist film, and symbol 3a and symbol 3b represents Resist patterns, and laser beam when symbol 6 represents that laser is described.In addition, the blooming pattern of symbol 2a represents and is equivalent to transfer printing pattern, and the blooming pattern of symbol 2b represents and is equivalent to monitor pattern.Similarly, the Resist patterns of symbol 3a represents that the part forming transfer printing pattern, the Resist patterns of symbol 3b represent the part forming monitoring pattern.
A () prepares the operation of photomask base plate
The photomask base plate that can be used in the manufacture method of photomask of the present invention for form blooming 2 on transparency carrier 1, also can be formed with photoresist film and (below, only photoresist film is called resist film on its surface.) 3 optical mask plate.Blooming 2 can be individual layer, or also can stacked multiple film.
In addition; as photomask base plate of the present invention, under manufacture has the object of the photomask of the film figure of lit-par-lit structure, in order to the photo mask midbody be patterned a part of blooming; and patterning is implemented to the inchoate blooming of pattern, also can form resist film.
(blooming)
In the operation preparing photomask base plate, the known membrane formation process such as sputtering method are utilized to form blooming 2 on the 1st interarea of transparency carrier 1.
As blooming, such as, be photomask (be more than 3 to the optical concentration OD of exposure light when using photomask).In addition, blooming also can for making the semi-transparent film of part exposure light transmission, or hyaline membrane.The exposure transmittance of semi-transparent film for benchmark (100%), illustrates the example of 3 ~ 60% with the transmitance of transparency carrier.
Blooming can be such as to the transmitance of exposure light for 3 ~ 30% and the phase-shifted film of the phase reversal of the representative wavelength making exposure light comprise (roughly displacement 180 degree).Angle in the scope of roughly 180 degree meanings 150 ~ 210 degree.
And, blooming can make to the transmittance of exposure light for 3 ~ 60% and the phase place of the representative wavelength that exposure light is comprised at the semi-transparent film of the scope intrinsic displacement of 5 ~ 90 degree.This semi-transparent film can become and is used in when forming fine space pattern, sectional hole patterns, replace photomask, or use together with photomask, the auxiliary light quantity through photomask, thus reach the object light quantity auxiliary patterns of the photosensitive threshold value of the resist on transfer printing body.
The thickness of blooming decides according to its function, but is preferably 5 ~ 250nm.Such as, if the photomask in binary mask, then the thickness of photomask can be 50 ~ 200nm.
Blooming can carry out Wet-type etching.The material of blooming can comprise such as chromium (Cr).Or blooming can be the semi-transparent film be made up of chromium compound.When blooming be as described above possess transmitance, phase-shifted amount semi-transparent film, can make to comprise the film of any one in the oxide of chromium, nitride, carbonide, nitrogen oxide and oxidation nitridation carbonide.
Such as, and by the metal beyond chromium, the blooming that Mo, Ta, W, Zr, Nb, Ti or their compound are formed also can be applied.The material of blooming also can for such as comprising the material of metal silicide or its oxide, nitride, carbonide, nitrogen oxide, oxidation nitridation carbonide.As the example of the metal silicide of the material that can use as blooming, there are molybdenum silicide and tantalum silicide etc.
Above-mentioned blooming preferred surface possesses and prevents reflection horizon for what suppress light reflectivity.In this situation, such as, the superficial layer of reflection horizon preferred chromium compound (oxide, nitride, carbonide etc.) that prevents being configured at chromium the surface of the blooming being major component forms change on the thickness direction of blooming.In addition, composition change can be change stage by stage, also can be change slowly.This prevents reflection horizon to have function to exposure Xanthophyll cycle reflection during for using photomask, but in dimensional measurement described later, has the effect suppressing surface reflection.
(resist film)
As the photomask base plate of manufacture method being used in photomask of the present invention, photomask base plate blooming 2 being formed with resist film 3 can be used in.The known coating unit such as slit coater, spin coater can be utilized, the resist of the raw material becoming resist film is coated on transparency carrier.The thickness of resist film is preferably 300 ~ 1000nm.
In addition, the positive light anti-etching agent that resist film is described as laser is herein described.But resist film can use negative type photoresist, when describing with electric wire, electric wire resist can also be used.In addition, when utilizing electric wire, the following explanation to laser beam can replace with wire harnesses.
And, in the manufacture method of photomask of the present invention, prepare the pattern data of the description to resist film.Description pattern data comprises the transfer printing pattern data based on going out designed by the equipment wanting to obtain, and also comprises the monitoring pattern data for the formation of the measuring monitoring pattern of CD described later.
In addition, that description pattern data of the present invention comprises, transfer printing pattern data and monitoring pattern data preferably carry out ormal weight dimensioned (so-called pressure-sizing processing) to the target CD of the blooming pattern formed is used in.Thus, front in additional etching described later (the 2nd etching), reliably become the state of undercut (the removing size of blooming is less), obtain surplus.This dimensioned is preferably relative to surplus (such as, 50 ~ 300nm) low about the 30 ~ 100nm being given to common Resist patterns.This transfer printing pattern and monitoring being described in detail later of pattern.
B () describes operation
In the manufacture method of photomask of the present invention, resist film 3 illuminating laser beam 6 of photomask base plate is described.When carrying out the description to resist film, use above-mentioned description pattern data.As the drawing apparatus for describing, can use and laser (wavelength about 413nm) is used laser drawing apparatus as the FPD (Flat Panel Display: flat-panel monitor) of light source.
In the manufacture method of photomask of the present invention, as above-mentioned, the pattern data of the regulation described comprises the monitoring pattern data of the transfer printing pattern data for the formation of the transfer printing pattern wanting to obtain and the monitoring pattern for the formation of dimensional measurement.Therefore, transfer printing pattern and monitoring pattern are described in same description operation.
(c) Resist patterns formation process
In the manufacture method of photomask of the present invention, by carrying out the development of the resist film on the surface of blooming, form Resist patterns 3a, 3b.This Resist patterns plays a role as etching mask when etching blooming.
(d) blooming patterning operation
(d-1) the 1st etching
In the manufacture method of photomask of the present invention, Resist patterns 3a, 3b were carried out etching the 1st of blooming 2 as mask with the stipulated time.1st is etched to Wet-type etching, and etchant (etching solution) can correspond to the composition of blooming and suitably select etchant.In addition, the 1st etching and the 2nd etching described later are all preferably Wet-type etching.Such as, when blooming is the photomask of chromium system, the etching solution comprising ammonium ceric nitrate can be used.First etching solution acts on the blooming surface of the part do not covered by Resist patterns, and the stripping of the blooming of this part starts thus.But, after the blooming stripping of the part do not covered by Resist patterns terminates, by isotropic etching, carry out the etching of the side from blooming.In the 1st etching, the time to the actual disappearance of blooming of the part do not covered by Resist patterns, carry out the etching of blooming, temporarily stop.Such as, the time of the 1st etching can be about 50 ~ 120 seconds.
(d-2) dimensional measurement of pattern is monitored
When stopping the 1st etching to blooming, the edge that there is the blooming be patterned is in the position identical with the edge of Resist patterns, or enter into the position of inner side from the edge of Resist patterns (namely, the marginal position of blooming enters into the state under Resist patterns) situation, but by following method, the dimensional measurement of the blooming pattern after the 1st etching (monitoring pattern 2b) can be carried out.
In addition, in the Wet-type etching of blooming, carry out the side etching of blooming, but the rate of etch of blooming is now actually certain.Therefore, proportional with etching period, the marginal position of blooming retreats, and the CD of blooming pattern changes (minimizing).The variable quantity of CD and the correlationship of etching period can be obtained in advance by experiment.Such as, as shown in Figure 2, under this condition, when side etching carries out to the blooming of same thickness and same composition, can measure in advance and grasp the variable quantity of CD relative to etching period.In the example shown in Fig. 2, the rate of etch of the blooming under defined terms is 8nm/ second.
In the manufacture method of photomask of the present invention, size on the photomask base plate etch stopping the 1st, monitoring pattern 2b, namely CD measures.Therefore, the Resist patterns 3b be on monitoring pattern 2b is peeled off, the measuring object part of monitoring pattern is exposed.Specifically, such as, the part be on monitoring pattern in Resist patterns carries out an exposure, and developer solution is contacted, and removes the resist of this part.Thus, the monitoring pattern be made up of blooming exposes.
When dimensional measurement, by removing the resist film being formed with the part of monitoring pattern of a part, the dimensional measurement of monitoring pattern directly can be carried out from upper surface side, so precision carries out optical dimensions measurement well.The dimensional measurement of monitoring pattern can use the light of wavelength 400 ~ 600nm to carry out through measurement by line width measurement mechanism.
Even if as monitoring pattern size measured by part monitoring pattern in also preferably include with transfer printing pattern in ensure that the part of CD value is (hereinafter referred to as guarantee portion.) corresponding part (is called measurement section.), that is, the part of identical with CD guarantee portion size.Therefore, the measurement result of the size of above-mentioned monitoring pattern reflects the CD value in the guarantee portion of the transfer printing pattern corresponding with measurement section.
And, can grasp the CD value measured of monitoring pattern and the difference as the CD value of target, and the value of the rate of etch of this blooming of and in advance grasp (reference Fig. 2) poor according to this, extrapolate the additional etching period of needs.
In addition, the monitoring pattern after above-mentioned dimensional measurement is when carrying out adding etching afterwards, and the etching on the surface of exposing and side etching all carry out.Therefore, the surface reflectivity of the blooming of sometimes monitoring in area of the pattern changes, or blooming sustains damage.But, monitoring pattern be not final utilization in the pattern of product, so without any problem.
In addition, in order to avoid monitoring the damage of pattern, pasting after dimensional measurement or coating masking material etc., when additional etching, carrying out the covering that the blooming in monitoring area of the pattern do not contact with etching solution also passable.
(d-3) the 2nd etching
In order to obtain the transfer printing pattern of the CD value as target, and the additional etching of the additional etching period only obtained as described above (i.e. the 2nd etching).2nd etching preferably Wet-type etching.In addition, due to blooming by etched edge close to the position of target size, even if so when needs add etching, this additional etching period also can be short.Preferably add the etching period that etching period is 0 ~ 10 second.
(e) matting
After the 2nd etching of additional etching period terminates, again stop etching, Resist patterns 3a, 3b are peeled off, and cleans.
According to above-mentioned method, even if having various unstable key element in the formation of Resist patterns becoming etching mask, also can reliably make the size of the final blooming pattern (transfer printing pattern) formed consistent with the specification of regulation.
F () checks operation
The transfer printing pattern 2a formed is carried out to the inspection of CD value etc.In addition, other inspection of the result for confirming transfer printing pattern is carried out.
In addition, in aforesaid way, the dimensional measurement of monitoring pattern is only carried out once.But, can as required, repeat dimensional measurement and the 2nd etching of monitoring pattern, this mode is also contained in the present invention.
To the transfer printing pattern and the monitoring pattern that are formed at photomask, be described in more detail.The transfer printing pattern of the repeat patterns comprised needed for the structure such as thin film transistor (TFT), color filter is formed in the photomask of display device manufacture.Fig. 3 represents an one example.Fig. 3 (a) is the example of the schematic diagram of the first type surface of photomask of the present invention.Actual pattern form is not limited to identical therewith.
As shown in Fig. 3 (a), in the photomask of the manner, be configured with the transfer printing pattern of 2 flat-panel display device manufactures in the central authorities of transparency carrier first type surface, 8 monitoring patterns are set outside the region of transfer printing pattern.In the manufacture method of photomask of the present invention, preferably for monitoring pattern, on the transparent substrate, configure multiple outside the region of transfer printing pattern, the plurality of monitoring pattern has CD measurement section respectively.The monitoring pattern preference at this 8 place, as all having the size of about 0.2 ~ 10mm in X-direction, Y-direction, is more preferably 0.5 ~ 10mm.The number being formed at the monitoring pattern on photomask of the present invention does not limit.The number of monitoring pattern preferably can be 2 ~ 12.By multiple monitoring pattern, under etching action is not uniform situation in face, grasp its trend, or process (such as to the measurement result of multiple monitoring pattern, calculating mean value) etc., carry out the higher additional etching of precision (the 2nd etching), thus the higher transfer printing pattern of reliability can be obtained.
Each position of multiple monitoring pattern preferably near the angle that has of transparency carrier or limit, position to configure separated from each other respectively outside the region of transfer printing pattern.Such as, can configure respectively near 4 of transparency carrier jiao, or configure respectively near 4 limits.Because of monitoring pattern separated from one another (such as, the minor face of transparency carrier more than 1/4 separating distance), even if on the transparent substrate, when the patterning of blooming produces uneven in a little face, also can grasp this situation.
In the manner, transfer printing pattern comprises the pattern of pixels portion with the pattern of pixels being used in liquid crystal indicator.The repeating part (with reference to Fig. 3 (b)) arranging the unit cell pattern of multiple same shape regularly such as in units of the pattern of pixels of a pixel is comprised in pattern of pixels portion.
In this manual, unit cell pattern refers to as unit and carries out same repetition.As unit cell pattern, can be that least unit pattern is (such as in the pattern of display device, the pattern of pixels of 1 amount of pixels), or, also can arrange multiple least unit pattern (such as X with and/or Y-direction on each 2 ~ 5) form.
In addition, in monitoring pattern, the unit cell pattern identical with the unit cell pattern that transfer printing pattern comprises also has regularity in the mode identical with the configuration of the unit cell pattern in transfer printing pattern, and arranges multiple (with reference to Fig. 3 (c)).In addition, the unit cell pattern of monitoring in pattern can be not necessarily identical with the unit cell pattern in transfer printing pattern shape (with reference to Fig. 4 (b)).
Like this, in the manufacture method of photomask of the present invention, transfer printing pattern comprises the repeating part of recurring unit's pattern, and monitoring pattern preferably includes the repeating part of the unit cell pattern of the unit cell pattern that repetition transfer printing pattern the comprises part equal with the size with X-direction or Y-direction.In addition, in the manufacture method of photomask of the present invention, preferred transfer printing pattern comprises the repeating part of recurring unit's pattern, and monitoring pattern comprises the repeating part of the repetition unit cell pattern identical with the unit cell pattern that transfer printing pattern comprises.
But transfer printing pattern and the preferred etching environment of monitoring pattern are similar to.Therefore, transfer printing pattern and monitoring pattern are respectively when being set to A (%) and B (%) by the pattern openings rate in the square area in 1mm four directions, preferably its poor (A-B (%)) be 20 (%) below, be more preferably 10 (%) below.Herein, aperture opening ratio is the ratio of the area of removing blooming in pattern unit area.
If the quantity of the repetition of the unit cell pattern that monitoring pattern comprises forming the scope that the area of the part of monitoring pattern arranges, then can be not particularly limited.Preferably, in 1 place's monitoring pattern, unit cell pattern distinguishes about 3 ~ 1000 in the x, y direction, more preferably arranges 10 ~ 500.As long as the area forming the part of monitoring pattern brings suitable precision with convenient to dimensional measurement described later.This monitoring pattern is not used in the driving of the display device wanting to obtain.
Fig. 3 (b) is the enlarged diagram of the transfer printing pattern illustrated in the manner.In Fig. 3 (b), the pattern of pixels P11 of same shape, P12 ... arrange regularly Deng in X-direction and Y-direction.In the example of Fig. 3 (b), can such as using a pattern of pixels P11 as unit cell pattern, using the repeat patterns as unit cell pattern such as P11, P12.In addition, such as, also X-direction and Y-direction will can comprise respectively the repeat patterns of two pattern of pixels (P11, P12, P21 and P22) as unit cell pattern.Its size of unit cell pattern (i.e. the repetition period of pattern) is respectively about 10 ~ 300 μm in X-direction and Y-direction, arranges multiple in the x, y direction.Below, when being unit cell pattern as a pattern of pixels (P11, P12 etc.), the manner is described.
Transfer printing pattern is provided with guarantee portion.This is the arbitrary part that transfer printing pattern comprises, can for obtaining the part of higher CD precision.In Fig. 3 (b), regulation X-CD guarantee portion, as the width of the X-direction of the P22 of unit cell pattern, regulation Y-CD guarantee portion, as the width of Y-direction.
The enlarged diagram of the monitoring pattern M that Fig. 3 (c) uses when representing and use above-mentioned transfer printing pattern.In this figure, unit cell pattern (P11, P12 of comprising with transfer printing pattern ...) unit cell pattern (M11, M12 of identical shape ...) arrange with the spacing identical with the unit cell pattern that above-mentioned transfer printing pattern comprises.And, X-CD measurement section is set, as the width of the X-direction of unit cell pattern M22, Y-CD measurement section is set, as the width of Y-direction.In addition, the size in the X-CD guarantee portion of unit cell pattern P22 and Y-CD guarantee portion respectively with the X-CD measurement section of unit cell pattern M22 and the measure-alike of Y-CD measurement section.
In the manner, after to the 1st etching of blooming, carry out the measurement of the X-CD measurement section of unit cell pattern M22 and the measurement of Y-CD measurement section, thus degree is carried out in the etching can grasping the blooming of the part of unit cell pattern P22 exactly, and the 2nd etching period etched after determining to be applied to.
But in above-mentioned example, unit cell pattern P22 describes with identical description condition with unit cell pattern M22.Therefore, the CD measurement section of unit cell pattern M22 and the CD portion of guarantee of unit cell pattern P22 become the CD under identical description condition.For this point, be below described.
Fig. 7 represents the action of the laser beam from imaging head irradiation in the laser drawing apparatus that the manner uses.Repeat to make laser beam scan the sweep length of regulation in the Y direction in this laser drawing apparatus after, transmit the action that the transmission length of regulation is so in the X direction.If by the repetition of this action, the description of regulation area (1 band) terminates, then imaging head or movable workbench, carries out the description of adjacent band.Certainly, these actions can be carried out in the combination of relative motion as imaging head or worktable together with the action of the amplitude of fluctuation of the regulation of laser beam.
Seam portion in Fig. 7 (with the part on the border of contiguous band) can overlapping scan (irradiation of laser beam), also can connect.
Such as, if light velocity diameter is the description of the single beam mode of A (μm), then the light beam of X-direction transmits length is A (μm).On the other hand, if scan the multiple beam mode of multiple laser beam simultaneously, then the light beam of X-direction transmits the integral multiple that length is light velocity diameter.
In addition, no matter can both apply the present invention in single beam mode or multiple beam mode, but especially multiple beam mode when, the Be very effective of invention.
Fig. 8 represents the example of the action of the laser beam of irradiating from the imaging head of laser drawing apparatus.
With reference to Fig. 9, the method that the line width (CD) in the Y-direction of the laser beam that the imaging head from laser drawing apparatus irradiates controls is described.During 1 scanning in the Y direction, according to the time control CD of On/Off laser beam.That is, carry out the On/Off of laser beam with the unit of the least unit of laser drawing apparatus defined and grid G (such as, G=0.005 μm), divide the edge of pattern.But the irradiation energy of laser beam is not defined as constant during 1 scanning.Even if in the Y direction 1 time scanning, in the amplitude of fluctuation (beam flying length) of in other words laser beam, laser drawing apparatus has intrinsic disorder, and the uneven situation of light quantity is quite a few.
On the other hand, as shown in Figure 10, the CD (line width) of X-direction pattern determines according to the exposure intensity of the light of the laser beam (light velocity diameter A μm) of irradiating from the imaging head of laser drawing apparatus.Herein, when multiple beam mode, irradiate the light of the light quantity of photosynthetic multiple laser beam of each laser beam.But multiple laser beam is with constant distance (X-direction) arrangement, and this relative position does not move, so when the edge of depicting pattern, the power of adjustment laser beam, to become the line width of needs.Such as, in Figure 10 (b), if utilize the laser beam of light velocity diameter A μm to describe the width of A μm, then to the beam intensity of this laser beam setting 100%.As shown in Figure 10 (c), when describing the line width of 1.3A μm, the power (beam intensity) of 100% (representing with white circle) and power (representing with the grey chromosphere) synthesis of 30% are described.Like this, the pattern of the line width had beyond the integral multiple of light velocity diameter can be described.Like this, control by the power of laser beam the CD control carrying out X-direction.The power of laser beam controls to adjust by stages, such as, in the laser beam of light velocity diameter with 0.25 μm, beam intensity can be changed with 50 stages (every 0.005 μm).
In addition, in Figure 10 (a) as the arrangement of the light beam illustrated in 3 light beams, in the action of drawing apparatus, not only have this arrangement to keep intact into the situation being integrated movement, also have adjacent light beam to have the situation of the time difference and movement.That is, in this application, the arrangement of light beam meaning is finally by the arrangement of the position on the pattern described, and not necessarily meaning describes the light beam arrangement each other in action.
As more than, generally, in laser drawing apparatus, respectively according to above-mentioned mechanism carry out X-direction CD divide and Y-direction CD division.If there is no the individual difference (when multiple beam mode) of uneven, the laser beam of beam intensity in the transmission of X-direction, the variation of beam intensity is not had in each scanning in the Y direction, then in theory, by the control (Y-direction) of above-mentioned On/Off and the permutation and combination (X-direction) of beam intensity, regardless of in which position, the CD as designed all can be reproduced.But, in reality, the energy that the irradiates variation that also has device intrinsic of 1 scan period.Therefore, because of these deviation key factor, and the shape of the Resist patterns that cannot avoid the formation of changes.And, carry out producing in the multiple beam mode scanned demifacet that printing efficiency uprises utilizing multiple laser beam, the deviation of exposure that the individual difference of each laser beam brings simultaneously.
When considering above-mentioned, when carrying out the dimensional measurement of monitoring pattern of the present invention, if make the description condition applied in the formation of the Resist patterns of the etching mask becoming this monitoring pattern consistent with the description being applied to transfer printing pattern, then can become the really high dimensional measurement of reliability.In other words, the description condition identical with the description condition applied in transfer printing pattern be applied to and monitor the X-direction of pattern and at least one party of Y-direction, it is effective for being preferably applied to both sides.And this description condition is preferably used in the light beam arrangement of the laser beam homenergic bundle of description in X-direction, in the Y direction, is the scanning position of this energy beam.Scanning position refers in the cycle scanned for 1 time the part (position) being arranged to describe herein.
Light beam arrangement is the arrangement of the beam intensity of laser beam.In addition, when applying multiple beam mode, in addition, identify each laser beam, the arrangement of the beam intensity that the combination of each laser beam is respective with it.
As an example, in the transfer printing pattern shown in Fig. 3 (b), in the X direction with constant transmission length (if single beam is described then to transmit length and light velocity equal diameters, if multiple beam description is then the integral multiple of light velocity diameter.) transmit laser beam, carry out, to the scanning of the constant sweep length (2 amount of pixels) of Y-direction, repeating this action.In Fig. 3 (b), (c), the beam intensity of white circle expression 100%, black circle represents beam intensity 0% (closedown), and grey chromosphere represents their intermediate intensity.
Herein in the X direction, arrangement 21 amount of light velocity diameter (in Fig. 3 (b) from bottom to up with white circle, black circle, black circle ... corresponding arrange as light beam 100%, 0%, 0% ... arrangement) become describe the repetition period, this is equivalent to 2 amount of pixels (in X-direction two unit cell pattern) of unit cell pattern P11 and P21.In the description of below unit cell pattern P31, also describe X-direction 2 pixels by the light beam arrangement of these 21 laser beam.
Herein, the unit cell pattern P22 being provided with guarantee portion is described by the light beam arrangement of the half of the upside in the light beam arrangement of above-mentioned 21 laser beam.
On the other hand, in the Y direction, the sweep length of laser drawing apparatus is 2 pixels, repeats this description scanning.Therefore, in the example shown in Fig. 3, the description repetition period of Y-direction becomes sweep length.Herein, unit cell pattern P22 is described by the scanning position on later half (right side) of this 1 sweep length.
But, in the monitoring pattern shown in Fig. 3 (c), also similarly arrange the unit cell pattern M11 and M21 etc. of the size identical with unit cell pattern P11 and P21 etc. with the transfer printing pattern of Fig. 3 (b).And in monitoring pattern, the light beam as X-direction same as described above arrange (that is, white circle, black circle, black circle from bottom to up as described above ... 21 combinations of ash chromosphere) describe.
Therefore, understand for measurement section (X-CD measurement section, Y-CD measurement section) measured in dimensional measurement operation, in the same manner as the situation of the transfer printing pattern shown in Fig. 3 (b), as the Y-CD measurement section of the later half scanning position of the X-CD measurement section of the first half of the description recurring unit of 21 laser beam and 1 sweep length of Y-direction.As understood from Fig. 3 (c), the unit cell pattern M22 being provided with measurement section is described by the half of the upside in the arrangement of 21 laser beam of above-mentioned X-direction, further, described by the scanning position on later half (right side) of 1 sweep length of Y-direction.Like this, the description condition identical with the description condition applied in transfer printing pattern be applied to and monitor the X-direction of pattern and at least one party of Y-direction, it is effective for being preferably applied to both sides for the CD management in order to exquisiteness.In addition, it is effective for the CD management in order to exquisiteness that description condition comprises at least one that select from the scanning position of the arrangement of the light beam of the X-direction of the energy beam being used in description and Y-direction.
Consider description mechanism, and determine the object of dimensional measurement, realize extremely exquisite CD management thus.Namely, as described above, by using transfer printing pattern at least partially as CD guarantee portion time, be the size identical with the CD guarantee portion of transfer printing pattern and the CD measurement section determining the object as dimensional measurement in the mode that the description condition that the CD guarantee portion with transfer printing pattern is identical carries out describing to monitor the CD measurement section of pattern, realize extremely exquisite CD management thus.
In addition, when applying multiple beam mode, the light beam as X-direction arranges, preferably not only consider the arrangement of beam intensity, also identify each laser beam (such as, light beam No.1, No.2 ...), and consider the arrangement of this light beam and its each beam intensity simultaneously.That is, in the measurement section of the guarantee portion of transfer printing pattern with monitoring pattern, make the combination of used light beam arrangement and beam intensity identical.Thereby, it is possible to comprise the micro-individual difference of each laser beam, monitoring pattern is made to reflect the state (description condition) of the description in transfer printing pattern, and the reliability of the dimensional measurement of operation after improving.
As described above, in the manufacture method of photomask of the present invention, in description operation, when X-direction existing description repetition period (the light beam arrangement) of the X-direction repeating the description condition specified, Be very effective of the present invention.Light beam arrangement is repeated according to the description repetition period of each X-direction.
In the example using above-mentioned Fig. 3 to be described, the description repetition period (light beam arrangement) of X-direction in description operation and the spacing (repetition period) of the X-direction of unit cell pattern are 2:1.Namely, in the example shown in Fig. 3, the description repetition period (light beam 21 amount) of X-direction is equivalent to the length (spacing of the X-direction of unit cell pattern) of the unit cell pattern of unit cell pattern P11 and P21 (being unit pattern M11 and M21 when monitoring pattern) these 2 X-directions.But, be not limited to this, at the integer that the lowest common multiple of the spacing of the description repetition period of X-direction and the X-direction of unit cell pattern is less than 20, be more preferably less than 15, when being more preferably the integer of less than 10, multiple the selected of CD guarantee portion (or CD measurement section) becomes easy, is favourable.
In addition, in above-mentioned example, the description repetition period (scanning is long) of describing the Y-direction in operation is 2:1 with the spacing (repetition period) of the Y-direction of unit cell pattern.Namely, in the example shown in Fig. 3, the length of the description repetition period (scanning is long) of Y-direction is equivalent to the length (spacing of the Y-direction of unit cell pattern) of the unit cell pattern of unit cell pattern P11 and P12 (being unit pattern M11 and M12 when monitoring pattern) these 2 Y-directions.But, be not limited to this, the lowest common multiple of the spacing of description repetition period in the Y direction and the Y-direction of unit cell pattern is the integer of less than 20, be more preferably less than 15, be more preferably be less than 10 integer time, multiple the selected of CD guarantee portion (or CD measurement section) becomes easy, is favourable.
In order to set the scope of lowest common multiple like this, also can process pattern data.Such as, zoom in or out pattern data in advance in the x direction or the y direction, the description repetition period of the size and X-direction or Y-direction that are adjusted to unit cell pattern has integer that is the lowest common multiple of less than 20, when describing, the correction reduced or amplify turning back to size originally can be carried out.
In addition, in the present invention, the sweep length of Y-direction also can be set as that little width is grown in the maximum scan had than laser drawing apparatus.By such operation, the lowest common multiple of above-mentioned scope sometimes can be become.
Shape shown in Fig. 3 is not limited to for transfer printing pattern (and, the shape of the monitoring pattern corresponding with it), designs according to the purposes of the photomask manufactured.
Transfer printing pattern shown in Fig. 4 is substantially identical with Fig. 3, but the CD portion of guarantee of transfer printing pattern is only Y-CD guarantee portion, so do not need the measurement of X-CD measurement section in monitoring pattern.According to this situation, the shape of the monitoring pattern shown in Fig. 4 becomes line and space pattern.But as shown in Figure 4, the edge becoming the blooming pattern of measuring object is corresponding, and the design size of Y-CD guarantee portion and Y-CD measurement section is equal.
In Figure 5, as S (Source)/D (Drain) layer of TFT (Thin Film Transistor: thin film transistor (TFT)), exemplify the pattern of complicated shape.In the example as shown in fig. 5, owing to setting the Y-CD guarantee portion of two places (in a place be channel part) transfer printing pattern, so the Y-CD measurement section of monitoring pattern also arranges two places corresponding with these.In this example embodiment, the description repetition period consistent with the X-direction of unit cell pattern and the spacing of Y-direction (1:1) of X-direction and Y-direction.In addition, the unit cell pattern of monitoring pattern is the shape identical with the unit cell pattern of transfer printing pattern.
In addition, in the example as shown in fig. 5, spatial portion (transmittance section) is become according to the X-CD portion of guarantee of transfer printing pattern, the Y-CD portion of guarantee becomes line portion (light shielding part) and spatial portion (transmittance section), in monitoring pattern, using the part of the same width of correspondence as X-CD measurement section and Y-CD measurement section, measuring object as dimensional measurement.
Fig. 6 is the figure configuring OPC (Optical Proximity Correction: optical near-correction) in the bight of the pattern of quadrilateral respectively, but describe the configuration of laser beam and guarantee portion, measurement section relation identical with the example in Fig. 3.
In addition, represent that the design in guarantee portion and measurement section is not necessarily completely the same, the position being used in the blooming edge that CD measures is corresponding in both.Namely, even if the light-shielding pattern having regulation to design in the portion of guarantee, in measurement section for this pattern form some, shortcoming part, extention (Fig. 6 is this example), in measurement section, this light-shielding pattern is separated into multiple, if there is corresponding part on the position at the blooming edge measured for CD, then " there is the CD measurement section of the size identical with CD guarantee portion ".
Above explanation uses the situation of laser beam to be illustrated to description, but when using other energy beams such as wire harnesses, equally also can apply.
In addition, in above-mentioned, the situation forming a transfer printing pattern is on the transparent substrate described, but this is applicable to being applied to so-called binary mask.But the present invention is not limited to this.Such as, on the transparent substrate, when forming multilayer pattern via description, etching respectively, also in any one deck application the present invention of multilayer, also the present invention can be applied multiple layers whole layers in addition.
Such as, manufacture by forming photomask on the transparent substrate, making the semi-transparent film of a part of printing opacity of exposure light, and respectively patterning is carried out to them, and as comprise light shielding part, transmittance section, semi light transmitting part, many greyscale photo masks of transfer printing pattern time can apply manufacture method of the present invention.
Or, manufacture by forming the phase-shifted film making the phase reversal of exposure light on the transparent substrate, form photomask on this basis, and respectively to they carry out patterning to formed transfer printing pattern, phase-shifted mask time, also can apply manufacture method of the present invention.
Be not particularly limited by the purposes of the photomask of manufacture method gained of the present invention.Such as, the transfer printing pattern of the photomask manufactured by the manufacture method of photomask of the present invention can be the pattern of the display device manufacture such as liquid crystal indicator (LCD) and EL display device.
The present invention includes the photomask using described manufacture method gained, by exposure device, transfer printing pattern is transferred to the manufacture method of the display device on transfer printing body.That is, the manufacture method of display device of the present invention has the operation preparing to be transferred to by the operation of the photomask of above-mentioned manufacture method gained and the transfer printing pattern that uses exposure device to be had by above-mentioned photomask on transfer printing body.According to the manufacture method of display device of the present invention, display device transfer printing pattern higher for dimensional accuracy being transferred to transfer printing body can be produced.
Herein, the exposure device of use is preferably used as LCD or FPD projection aligner (the opening number NA of such as optical system is 0.08 ~ 0.9) that is known, equimultiple exposure.As exposure light source, the light of wide wavelength comprising i line, h line, g line can be used.In addition, the proximity printing device of same light source can certainly be used.
In addition, the present invention possesses to carry out the transfer printing pattern of patterning gained and the photomask of multiple monitoring pattern to blooming on the transparent substrate.Multiple monitoring pattern is formed in outside the region of transfer printing pattern.In photomask of the present invention, using transfer printing pattern at least partially as CD guarantee portion time, monitoring pattern there is the size identical with CD guarantee portion and the CD measurement section formed with the description condition identical with CD guarantee portion.In addition, description condition be the energy beam of the description being used in transfer printing pattern, at least one in the scanning position of the arrangement of the light beam of X-direction or Y-direction.The light beam arrangement of X-direction and the scanning position of Y-direction are as above-mentioned.Photomask of the present invention has the higher transfer printing pattern of dimensional accuracy.

Claims (16)

1. a manufacture method for photomask, is the manufacture method possessing photomask blooming being carried out to the transfer printing pattern of patterning gained on the transparent substrate, it is characterized in that having:
Described transparency carrier prepares the operation with the photomask base plate of described blooming and resist film;
Use drawing apparatus, for described resist film, the pattern data based on regulation carries out the description operation described;
The Resist patterns formation process of Resist patterns is formed by developing to described resist film; And
By using described Resist patterns as mask, described blooming is etched thus forms the blooming patterning operation of blooming pattern,
In described description operation, use and comprise for the formation of the transfer printing pattern data of the described transfer printing pattern wanting to obtain and describe for the formation of the described pattern data of the monitoring pattern data of the monitoring pattern of dimensional measurement,
Described blooming patterning operation comprises:
Described blooming is implemented to the 1st etching of the etching of stipulated time;
The dimensional measurement of described monitoring pattern; And
Based on the size of the described monitoring pattern obtained by described dimensional measurement, described blooming is implemented to the 2nd etching of the etching added,
Described monitoring pattern comprise using described transfer printing pattern at least partially as CD guarantee portion time, the CD measurement section of the size identical with described CD guarantee portion.
2. the manufacture method of photomask according to claim 1, is characterized in that,
The described CD measurement section that described monitoring pattern comprises is the CD measurement section be depicted as with the description condition identical with described CD guarantee portion,
Described description condition comprises at least one that select from the scanning position of the arrangement of the light beam of the X-direction of the energy beam being used in description and Y-direction,
Described dimensional measurement is carried out for described CD measurement section.
3. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
Described 1st etching and described 2nd etching are Wet-type etchings.
4. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
When described dimensional measurement, a described resist film removing part for the part of described monitoring pattern will be formed with.
5. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
On described transparency carrier, and outside the region of described transfer printing pattern, configure multiple described monitoring pattern, the plurality of described monitoring pattern has described CD measurement section respectively.
6. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
Described transfer printing pattern comprises the repeating part of recurring unit's pattern,
Described monitoring pattern comprises repeating part, repeats the unit cell pattern of described unit cell pattern that described transfer printing pattern the comprises part equal with the size with described X-direction or described Y-direction in this repeating part.
7. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
Described transfer printing pattern comprises the described repeating part of unit cell pattern described in repetition,
Described monitoring pattern comprises the repeating part of the repetition described unit cell pattern identical with the unit cell pattern that described transfer printing pattern comprises.
8. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
Described description operation has the description repetition period of the X-direction repeating the described description condition specified in described X-direction, and described light beam arrangement carries out repetition according to the description repetition period of described X-direction.
9. the manufacture method of the photomask according to claims 1 or 2, is characterized in that,
Described description operation has the description repetition period of the Y-direction repeating the described description condition specified in described Y-direction, and described scanning position carries out repetition according to the description repetition period of described Y-direction.
10. the manufacture method of photomask according to claim 8, is characterized in that,
The lowest common multiple of the spacing of the description repetition period of the described X-direction in described description operation and the described X-direction of described unit cell pattern is the integer of less than 20.
The manufacture method of 11. photomasks according to claim 9, is characterized in that,
The lowest common multiple of the spacing of the description repetition period of the described Y-direction in described description operation and the described Y-direction of described unit cell pattern is the integer of less than 20.
The manufacture method of 12. photomasks according to claims 1 or 2, is characterized in that,
Described transfer printing pattern is the pattern of display device manufacture.
13. 1 kinds of photomasks, this photomask possesses on the transparent substrate and carries out transfer printing pattern that patterning obtains and multiple monitoring pattern to blooming, it is characterized in that,
Described monitoring pattern is arranged on outside the region of described transfer printing pattern,
Using described transfer printing pattern at least partially as CD guarantee portion time, described monitoring pattern comprises the part of the size identical with described CD guarantee portion.
14. photomasks according to claim 13, is characterized in that,
The part of the size identical with described CD guarantee portion that described monitoring pattern comprises is formed with the description condition identical with described CD guarantee portion,
Described description condition be the energy beam of the description being used in described transfer printing pattern, the scanning position of the arrangement of the light beam of X-direction or Y-direction at least one.
The manufacture method of 15. 1 kinds of display device, is characterized in that, has:
Prepare the operation by the photomask of the manufacture method gained described in claims 1 or 2; And
Use exposure device, the transfer printing pattern had by described photomask is transferred to the operation on transfer printing body.
The manufacture method of 16. 1 kinds of display device, is characterized in that, has:
Prepare the operation of photomask according to claim 13; And
Use exposure device, the transfer printing pattern had by described photomask is transferred to the operation on transfer printing body.
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