CN1243284C - Automatic feedback modified exposure method and system - Google Patents
Automatic feedback modified exposure method and system Download PDFInfo
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- CN1243284C CN1243284C CN 02101701 CN02101701A CN1243284C CN 1243284 C CN1243284 C CN 1243284C CN 02101701 CN02101701 CN 02101701 CN 02101701 A CN02101701 A CN 02101701A CN 1243284 C CN1243284 C CN 1243284C
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- parameter group
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Abstract
The present invention relates to an automatic feedback modified exposure method and a system thereof. The method of the present invention comprises the following steps: providing a first wafer and a second wafer; using a first parameter group for exposing patterns on a first layer of the first wafer; using a second parameter group for aligning patterns on a second layer and patterns on the first layer of the first wafer; measuring the first wafer to obtain correct values of the first parameter group and the second parameter group; using the correct value of the first parameter group for correcting the first parameter group and using the corrected first parameter group for exposing patterns on a first layer of a second wafer; using the correct value of the second parameter group for correcting the second parameter group and using the corrected second parameter group for aligning of patterns on a second layer and the patterns on the first layer of the second wafer. Corresponding to the method, an exposure system of the present invention comprises an exposure device, a measuring device and a processing device.
Description
Technical field
The present invention relates to the method and system of a kind of exposure bench parameter correction, be particularly to a kind of exposure method and system of automatic feedback correction.
Background technology
Little shadow (Photolithography) can be to say so in the whole manufacture of semiconductor one of the most very important step.Every relevant with the MOS component structure, as: the zone of the pattern of each layer film (pattern) and mix (dopants), all decide by this step of little shadow.Therefore, we are usually with little shadow number of times of a required process of processing procedure, or needed light shield quantity, represent the complexity of this processing procedure.
In order to improve the resolution of exposure, can use the mode of " repeating and stepping " (step and repeat) to expose usually, exposing patterns that it forms on wafer and employed mask pattern ratio were more than or equal to 1: 1.Anticipate promptly, the projection light of process light shield will just be radiated at after dwindling according to proper proportion on the wafer position partly, so the exposure of full wafer wafer must expose through tens of repetitions " one one ", could the step of exposure that the full wafer wafer is required finish.
In addition, wafer exposure step is once only finished the transfer of a layer pattern, as mentioned above, needs the above figure transfer of a level just can finish in the processing procedure usually.
Therefore, when carrying out little shadow step, not only when same layer pattern exposure, need accurately with wafer on " each piece " exposure position aim at, also need be when carrying out the different layers graph exposure, accurately with the position alignment of each light shield and wafer.Because exposure bench is when carrying out the exposure of each batch wafer, it all has slightly drift in order to exposure and the correct parameter value of aiming at (recipe), therefore needing all after the exposure that whenever executes a collection of wafer that the wafer after the exposure is measured the foundation of exposure bench parameter value correction when obtaining error amount as the next group wafer exposure.
Traditionally, the action of this kind correction all is by manually carrying out, and handles via a testing wafer (Pilotwafer) being sent into exposure bench, and parameter benefit value required when handling the next group wafer with easy formula manually to calculate exposure bench is to do correction.Yet this kind mode need expend a large amount of time, and is easy to generate mistake, makes output descend and the rate of reforming (rework rate) rising the usefulness of unfavorable production.
Summary of the invention
In order to address the above problem, the invention provides a kind of exposure method and system of automatic feedback correction, with the computer system value of benefit calculating more accurately, avoid the shortcoming of traditional manual method.
A purpose of the present invention is to provide a kind of exposure method of automatic feedback correction, may further comprise the steps: first and second wafer is provided; Use one first parameter group that this first wafer is carried out the exposure of a ground floor pattern; Use one second parameter group that this first wafer is carried out aiming at of a second layer pattern and this ground floor pattern; This first wafer is measured and obtained the modified value of this first and second parameter group; Use this first parameter group of modified value correction of this first parameter group and use this revised first parameter group that this second wafer is carried out the exposure of this ground floor pattern; And use this second parameter group of modified value correction of this second parameter group and use this revised second parameter group that this second wafer is carried out aiming at of this second layer pattern and this ground floor pattern.
Another object of the present invention is to provide a kind of exposure system of automatic feedback correction, comprise: an exposure device, use one first parameter group that one first wafer is carried out the exposure of a ground floor pattern, and use one second parameter group to this first wafer carry out a second layer pattern exposure and with the aiming at of this ground floor pattern; One measurement mechanism is measured this first wafer and is obtained the modified value of one first parameter group and second parameter group; One treating apparatus, use this first and second parameter group of modified value correction of this first and second parameter group and export revised first parameter group and revised second parameter group to this exposure device; Wherein, this revised first parameter group of this exposure device utilization is carried out the exposure of this ground floor pattern to second wafer, and utilize this revised second parameter group to this second wafer carry out this second layer pattern exposure and with the aiming at of this ground floor pattern.
By this, the present invention utilizes the calculating of the treating apparatus value of benefit and is fed back to the action that exposure bench exposes and aims at, and finishes the action of correction automatically, saves manpower and time, reduces wrong the generation and the raising prouctiveness.
Description of drawings
Fig. 1 is the calcspar of the exposure system of automatic feedback correction in one embodiment of the invention;
Fig. 2 is the process flow diagram of wafer running in one embodiment of the invention;
Fig. 3 is the process flow diagram of the exposure method of automatic feedback correction in one embodiment of the invention;
Fig. 4 a and Fig. 4 b are the constant table and the computing formula of first and second parameter group in one embodiment of the invention.
Embodiment
Fig. 1 is the calcspar of the exposure system of automatic feedback correction in one embodiment of the invention.Comprising one scan machine/stepper 1, an electron microscope (CD-SEM) 2, a treating apparatus 3.Having an alignment device 11 and a figure layer alignment device 12 that scanning/stepping exposes in scanning machine/stepper 1, is respectively the action of aiming in order to when the scanning/stepping that wafer is begun a figure layer exposes, and the alignment actions of carrying out the figure interlayer.
Automatic feedback correction exposure system operation in the present embodiment is as follows:
Wafer system (lot) in batches begins to send in scanning machine/stepper 1, the direction according to dotted arrow indication among Fig. 1, the action of progressively scan/the stepping exposure, the figure layer being aimed at and electron microscope is measured.Scanning in scanning machine/stepper 1/stepping exposure alignment device 11 is to receive the default or scanning/stepping exposure aligning of revised first parameter group to carry out the single figure layer of wafer; Figure layer alignment device 12 in scanning machine/stepper 1 is to receive default or revised second parameter group to carry out the aligning of two figure interlayers of wafer.Wafer finish a figure layer exposure and with the alignment actions of the second figure layer after, deliver to promptly that CD-SEM exposes, the measurement of alignment result and produce a survey data and export treating apparatus 3 to.Treating apparatus 3 self-scanning more respectively/stepping exposure alignment device 11, figure layer alignment device 12 receive its employed first and second parameter group.Treating apparatus 3 promptly begins the computing of the value of benefit and produces new, revised first, second parameter group after obtaining first, second parameter group and survey data, carrying out the scanning of next group wafer/stepping exposure and figure layer to punctual use for scanning/stepping exposure alignment device 11 and figure layer alignment device 12.
The computing formula of first, second parameter group and constant table see also Fig. 4 a and Fig. 4 b (scanning machine of being produced with Nikon company is an example).
Fig. 2 is the process flow diagram of wafer running in one embodiment of the invention.
At first in step 21 wafer is scanned/stepping exposure, this moment is if the non-testing wafer of this wafer (Pilot wafer) or need not test (re-pilot) again the time promptly continues step 22,23.If this wafer is testing wafer and test parameter value again, then carry out the inferior path of testing wafer, i.e. step 24,25, and at this testing wafer of step 26 decision whether must reform (rework), if need not reform, then the resulting benefit value of testing wafer is fed back to scanning/stepper; If need reform, the path of then reforming, i.e. step 27,28,29,30, whether the testing wafer after step 31 determines to reform once more need be reformed again then, reforms the path once if then repeat; Then get back to main path if not and carry out step 22,23.
Fig. 3 is the process flow diagram of the exposure method of automatic feedback correction in one embodiment of the invention.
At first, in step 41, use one first parameter group first wafer to be carried out the scanning/stepping exposure and the aligning of a ground floor pattern;
Then, in step 42, use one second parameter group that first wafer is carried out alignment actions between a second layer pattern and ground floor pattern;
Then, in step 43, first wafer is measured and obtained the modified value of first and second parameter group;
Come again, in step 44, use first and second parameter group of modified value correction of first and second parameter group;
At last, when beginning to handle second batch of wafer, use revised first and second parameter group repeating step 41,42,43,44.
By this, the present invention utilizes a feedback system to collect exposure bench measured value after employed parameter value and the exposure and calculate the needed benefit value of next group wafer with this data automatically when carrying out exposure and figure level to level alignment, therefore need not expend great amount of manpower, time and can reduce mistake.
The above embodiment only is explanation technological thought of the present invention and characteristics, its purpose makes the personage who has the knack of this skill can understand content of the present invention and is implementing according to this, when not limiting claim of the present invention with it, promptly the equalization of doing according to disclosed spirit generally changes or modifies, and must be encompassed in the claim scope of the present invention.
Claims (8)
1. the exposure method of an automatic feedback correction is characterized in that: may further comprise the steps:
One first and second wafer is provided;
Use one first parameter group that this first wafer is carried out the exposure of a ground floor pattern;
Use one second parameter group that this first wafer is carried out aiming at of a second layer pattern and this ground floor pattern;
This first wafer is measured and obtained the modified value of this first and second parameter group;
Use this first parameter group of modified value correction of this first parameter group and use this revised first parameter group that this second wafer is carried out the exposure of this ground floor pattern; And
Use this second parameter group of modified value correction of this second parameter group and use this revised second parameter group that this second wafer is carried out aiming at of this second layer pattern and this ground floor pattern.
2. the exposure method of automatic feedback correction as claimed in claim 1 is characterized in that: use a stepper to expose.
3. the exposure method of automatic feedback correction as claimed in claim 1 is characterized in that: use the one scan machine to expose.
4. the exposure method of automatic feedback correction as claimed in claim 1 is characterized in that: use an electron microscope to carry out the measurement of this first wafer.
5. the exposure system of an automatic feedback correction is characterized in that: comprising:
One exposure device uses one first parameter group that one first wafer is carried out the exposure of a ground floor pattern, and use one second parameter group to this first wafer carry out a second layer pattern exposure and with the aiming at of this ground floor pattern;
One measurement mechanism is measured this first wafer and is obtained the modified value of one first parameter group and second parameter group;
One treating apparatus, use this first and second parameter group of modified value correction of this first and second parameter group and export revised first parameter group and revised second parameter group to this exposure device;
Wherein, this revised first parameter group of this exposure device utilization is carried out the exposure of this ground floor pattern to second wafer, and utilize this revised second parameter group to this second wafer carry out this second layer pattern exposure and with the aiming at of this ground floor pattern.
6. the exposure system of automatic feedback correction as claimed in claim 5 is characterized in that: this exposure device is a stepper.
7. the exposure system of automatic feedback correction as claimed in claim 5 is characterized in that: this exposure device is the one scan machine.
8. the exposure system of automatic feedback correction as claimed in claim 5 is characterized in that: this measurement mechanism is an electron microscope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02101701 CN1243284C (en) | 2002-01-11 | 2002-01-11 | Automatic feedback modified exposure method and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02101701 CN1243284C (en) | 2002-01-11 | 2002-01-11 | Automatic feedback modified exposure method and system |
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| Publication Number | Publication Date |
|---|---|
| CN1431560A CN1431560A (en) | 2003-07-23 |
| CN1243284C true CN1243284C (en) | 2006-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 02101701 Expired - Lifetime CN1243284C (en) | 2002-01-11 | 2002-01-11 | Automatic feedback modified exposure method and system |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006019166A1 (en) * | 2004-08-19 | 2006-02-23 | Nikon Corporation | Alignment information display method, program thereof, alignment method, exposure method, device manufacturing method, display system, display device, program, and measurement/inspection device |
| CN101231470B (en) * | 2007-01-23 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Method for determining temperature distortion correcting parameter of lens array system apparatus |
| NL2003919A (en) * | 2008-12-24 | 2010-06-28 | Asml Netherlands Bv | An optimization method and a lithographic cell. |
| CN103529651B (en) * | 2013-10-23 | 2015-11-25 | 深圳市华星光电技术有限公司 | A kind of method and system realizing automatic makeup value in glass substrate exposure manufacture process |
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2002
- 2002-01-11 CN CN 02101701 patent/CN1243284C/en not_active Expired - Lifetime
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| CN1431560A (en) | 2003-07-23 |
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