CN1547247A - Method for manufacturing image sensor - Google Patents
Method for manufacturing image sensor Download PDFInfo
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- CN1547247A CN1547247A CNA2003101071415A CN200310107141A CN1547247A CN 1547247 A CN1547247 A CN 1547247A CN A2003101071415 A CNA2003101071415 A CN A2003101071415A CN 200310107141 A CN200310107141 A CN 200310107141A CN 1547247 A CN1547247 A CN 1547247A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention is a method for manufacturing image sensor, a base board is distributed into several sealing base boards with most matrix type, a blind hole or a bowl hole are drilled on the base board at one side of the sealing where is correspondent to the wire, a penetration hole is drilled on the top and the bottom wiring part of the sealing base board, a metal layer is coated in each hole, then, forming the frame dam, adhering the image sensor particle, the sealing cover and cutting along the edge of the board, thus the blind hole becomes the side of the external connection line.
Description
Technical field
The present invention relates to a kind of method of making image sensor.
Background technology
Figure 10 shows that a manufacturing process of existing image sensor, its processing procedure mainly is to cook up the base plate for packaging 81 that a plurality of matrix forms are arranged on a substrate 80, each side of each base plate for packaging is all offered the separation trough 82 of a strip, to form the block of each base plate for packaging 81, this substrate 80 includes metal level, and with light shield etching mode (Etching) many wiring of formation (Lead) 83, the position of corresponding each wiring was provided with a semicircle orifice 821 respectively when each separation trough 82 was offered, as shown in figure 11, the wiring of bottom surface, base plate for packaging top is electrically connected.Then a grid-like cover plate 9 is attached on the substrate 80, this cover plate 9 has a plurality of windows 91 that are arranged, each window 91 is aligned with the middle body of each base plate for packaging 81 respectively, make the local base plate for packaging 81 that cover each separation trough 82 both sides of grid-like cover plate 91, then carry out image sensor crystal grain (Chip) 7 last slice and routing; Again with a glass plate 6 capping cover plates tops, form single image sensor along separation trough 82 edge cuts of each base plate for packaging 81, and the grid-like cover plate after being cut just forms the frame dam 92 of each image sensor.
In aforesaid manufacture method, because cover plate 9 is sticked together with viscose on the base plate for packaging 81 that is covered in each separation trough 82 both sides, and be the reliability that raising cover plate 9 and each base plate for packaging 81 stick together, and often excessive improperly use viscose so that the time have viscose to overflow in the semicircle orifice 821 situation take place.
This type of image sensor surface mount is when circuit board, mainly be to produce at semicircle orifice 821 by scolding tin to climb the tin phenomenon, as shown in figure 12, to guarantee the reliability of solder joints conduction, but, engage the not good problem of conduction reliability when the aforementioned viscose A that overflows into semicircle orifice can cause welding, become defective item after making image sensor be welded on circuit board.
And the combination of cover plate and base plate for packaging, except aforesaid stick together combination, also have the part dealer to adopt the method for making that directly on substrate, forms the frame dam with injection molding method.This kind method for making overflows in order to avoid shooting material in each predetermined base plate for packaging 81A side outer rim, the base plate for packaging area must be strengthened, as shown in figure 13, make between external connection 83A side outer rim and the frame dam 91A and reserve spacing, but strengthen the base plate for packaging area and make that the encapsulation volume of image sensor is bigger, thereby still have in addition improved necessity.
Moreover, each base plate for packaging 81B can be in each region surrounded central authorities of pin 831B institute a gold-plated crystal cup (Die pad) 84B be set carry out ground connection for the image sensor crystal grain that is provided with, as shown in figure 14, yet the cost that this crystal cup 84B is gold-plated is higher.Therefore there is the dealer that the crystal cup of whole formula is modified into the crystal cup 84C of checkerboard type, as shown in figure 15, reduces cost to reduce gold-plated area.Yet, the crystal cup 84C of checkerboard type can produce space 841C, 841C part in space can't provide image sensor crystal grain ground connection, in other words, the crystal cup 84C of checkerboard type can limit earthing position, and then influence the circuit layout of image sensor crystal grain inside, so the design of the crystal cup of checkerboard type still has in addition improved necessity.
Summary of the invention
In order to overcome the above-mentioned shortcoming of the manufacture method existence that has image sensor now, the invention provides a kind of method of making image sensor, it is to replace the shape semicircle orifice that runs through of the prior art with a plurality of blind holes (or bowl hole) that do not run through base plate for packaging, when overflowing glue or plastics ejaculation, viscose need reserve spacing to avoid sticking together of frame dam shaping, and make the blind hole of external connection side can supply to climb tin, the reliability that promotes the image sensor quality bills of materials and mount, and can significantly reduce gold-plated area by the design of the crystal cup of square frame shape, to reach the effect that reduces manufacturing cost.
The technical solution adopted for the present invention to solve the technical problems is:
A kind of method of making image sensor, it is characterized in that, its step is as follows: it is that a substrate is formulated for the base plate for packaging zone that a plurality of matrix forms are arranged, this substrate two sides is defined as an end face and a bottom surface respectively, with the top of light shield etching mode at substrate, the metal level of bottom surface forms many internal wirings and external connection respectively, the corresponding external connection of each base plate for packaging position is drilled with a blind hole or bowl hole respectively, and be the blind hole center with each base plate for packaging side border, each internal wiring of each base plate for packaging is communicated with by a through hole that is drilled with respectively with external connection, a metal level is established in plating in each blind hole and each through hole, and each external connection all becomes electrical communication with an internal wiring by the metal level in the through hole;
By the substrate that abovementioned steps forms, each base plate for packaging zone end face forms frame dam, sticks together respectively behind the image sensor crystal grain with a glass plate capping again, cuts along each side border of each base plate for packaging at last, to produce image sensor.
The method of aforesaid manufacturing image sensor, wherein said formation frame dam are that a grid-like cover plate with a plurality of windows is attached on the substrate, the internal wiring of each base plate for packaging are exposed in the window of cover plate, to form a frame dam by this cover plate on each base plate for packaging.
The method of aforesaid manufacturing image sensor, wherein said formation frame dam are that the substrate that etching forms many inside and outside wiring is placed mould, and directly form the frame dam with injection molding method on each base plate for packaging.
The method of aforesaid manufacturing image sensor, the position of the through hole that is drilled with on wherein said each base plate for packaging is to drop on each internal wiring and external connection scope to be positioned at below, frame dam.
The method of aforesaid manufacturing image sensor, wherein said each base plate for packaging end face forms a crystal cup in many region surrounded central authorities of internal wiring institute, and this crystal cup is to be a square frame form, for arbitrary orientation ground connection around the image sensor crystal grain.
The present invention also can adopt following technical scheme
A kind of method of making image sensor, it is characterized in that, it is that a substrate is formulated for the base plate for packaging zone that a plurality of matrix forms are arranged, this substrate two sides is defined as an end face and a bottom surface respectively, with the top of light shield etching mode at substrate, the metal level of bottom surface forms many internal wirings and external connection respectively, the corresponding external connection of each base plate for packaging position is drilled with a blind hole respectively, and be the blind hole center with each base plate for packaging side border, each internal wiring of each base plate for packaging is communicated with by a through hole that is drilled with respectively with external connection, and a metal level is established in plating in each blind hole and each through hole, and each external connection all becomes electrical communication by the metal level in the through hole with an internal wiring;
Substrate by abovementioned steps forms cuts into single base plate for packaging along each side border of each base plate for packaging earlier, forms the frame dam at each base plate for packaging end face again, and sticks together respectively behind the image sensor crystal grain with a glass plate capping, to produce image sensor.
The method of aforesaid manufacturing image sensor, wherein said formation frame dam is that a frame dam is attached on the substrate, this frame dam has a window, and the internal wiring of each base plate for packaging is exposed in the window on frame dam.
The method of aforesaid manufacturing image sensor, wherein said formation frame dam are that the base plate for packaging that etching forms many inside and outside wiring is placed mould, and directly form the frame dam with injection molding method on each base plate for packaging.
The method of aforesaid manufacturing image sensor, the position of the through hole that is drilled with on wherein said each base plate for packaging is to drop on each internal wiring and external connection scope to be positioned at below, frame dam.
The method of aforesaid manufacturing image sensor, wherein said each base plate for packaging end face forms a crystal cup in many region surrounded central authorities of internal wiring institute, and this crystal cup is to be a square frame, for arbitrary orientation ground connection around the image sensor crystal grain.
The reliability that the present invention can promote the image sensor quality bills of materials and mount, and can significantly reduce gold-plated area by the design of the crystal cup of square frame shape, to reach the effect that reduces manufacturing cost.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a manufacturing flow chart of the present invention.
Fig. 2 is a substrate upward view of the present invention, shows external connection and blind hole.
Fig. 3 is the vertical view behind the substrate linking frame of the present invention dam.
Fig. 4 is the structure cutaway view that substrate of the present invention is finished encapsulation.
Fig. 5 is that image sensor of the present invention is welded in a circuit board schematic diagram.
Fig. 6 is the structure cutaway view of second embodiment of the invention.
Fig. 7 is the manufacturing flow chart of third embodiment of the invention.
Fig. 8 is that third embodiment of the invention is welded in a circuit board schematic diagram.
Fig. 9 is the vertical view behind the fourth embodiment of the invention substrate linking frame dam.
Figure 10 is the flow chart of existing image sensor making method.
Figure 11 is that existing substrate base surface forms winding diagram.
Figure 12 is that existing image sensor is welded in a circuit board schematic diagram.
Figure 13 is the structure cutaway view of existing image sensor with ejection formation frame dam.
Figure 14 is the floor map of whole formula crystal cup on the existing image sensor substrate.
Figure 15 is the floor map of checkerboard type crystal cup on the existing image sensor substrate.
Embodiment
See also Fig. 1 to Fig. 5, be the selected example structure of the present invention shown in the figure.
See also Fig. 1, the method for the manufacturing image sensor of present embodiment, it comprises the following steps:
One, substrate manufacture:
Be that a substrate 10 with metal level is formulated for base plate for packaging 11 zones that a plurality of matrix forms are arranged, these substrate 10 two sides are defined as an end face 101 and a bottom surface 102 respectively, and make the top of substrate 10 with the light shield etching mode, bottom surface 101,102 metal level forms many internal wirings 15 respectively, external connection 12 and the crystal cup 16 that is positioned at end face 101 middle bodies, the corresponding external connection of each base plate for packaging position is drilled with a blind hole (or bowl hole) 13 respectively, and be the blind hole center with each base plate for packaging side border, be communicated with by a through hole that is drilled with 14 respectively between each internal wiring of each base plate for packaging and external connection.In the present embodiment, the position of the through hole 14 that is drilled with on each base plate for packaging 11, be to be positioned at each internal wiring 15 and external connection 12 one section away from blind hole 13, and a metal level is established in plating in each blind hole 13 and each through hole, and each external connection 12 all by the metal level in the through hole with 15 one-tenth electrical communication of an internal wiring.
Two, form the frame dam
The mode on the formation frame dam that present embodiment adopted is to be the example explanation with the adhesive means.It is attached to a grid-like cover plate 2 on the substrate 10, this cover plate 2 has a plurality of windows 21 of arranged, each window 21 is aligned with the middle body of each base plate for packaging 11 respectively, as shown in Figure 3, each internal wiring 15 is exposed in the window 21 of cover plate 2, makes this cover plate on each base plate for packaging, form a frame dam 20.
Three, crystal grain sticks together
Image sensor crystal grain 3 is attached on each base plate for packaging, makes grounding leg (not shown) and crystal cup 16 ground connection in arbitrary orientation around the image sensor crystal grain 3, and carry out routing and be connected to each interior pin 15.
Four, encapsulation
Be covered on the cover plate with a glass plate 4, so that image sensor crystal grain 3 is packaged between substrate and the glass plate 4, as shown in Figure 4.
Five, cutting
Because the present invention is when forming the step on frame dam, substrate 10 is not cut apart as yet, and the border in each predetermined base plate for packaging 11 zone is also without any logical empty hole on the substrate, therefore forms employed viscose in the frame dam step and do not have spill and leakage to the phenomenon of substrate 10 bottom surfaces 102 and take place.
And the inside and outside wiring 15,12 of each base plate for packaging is conducted by through hole 14, when cutting step, along each base plate for packaging 11 borders cutting, and 13 pairs of each blind holes are cut, the side that blind hole 13 metal levels become external connection 12 is located in feasible plating, this side can supply to climb tin really and adhere to when image sensor is welded in circuit board, as shown in Figure 5, make each external connection 12 of image sensor all can effectively contact conducting with circuit board really, thus, just can reach the reliability of raising image sensor when surface mount.
Certainly, still there are many examples in the present invention, the only variation on the details therebetween, the mode that for example forms the frame dam is except aforesaid adhesive means, also can adopt the mode of ejection formation, it is that substrate places mould (figure does not mark), and directly forms the frame dam with injection molding method on each base plate for packaging.And since on the substrate border of each base plate for packaging without any logical empty hole, the therefore form that the frame dam of adjacent base plate for packaging can be designed to link to each other, cutting and separating when cutting step again.So, just do not need as prior art,, keep the distance between external connection side outer rim and frame dam by strengthening the base plate for packaging area.Therefore, manufacture method of the present invention is compared with the mode that existing ejection formation forms the frame dam, more can improve product quality and reduction encapsulation volume.
Certainly, still there are many examples in the present invention, therebetween the only variation on the details.See also Fig. 6, it is the sectional structure chart of the second embodiment of the present invention, the position of the through hole 14A that is drilled with on each base plate for packaging 11A wherein is to drop on each internal wiring 15A and external connection 12A scope is positioned at frame dam 20A below, so also can reach the identical effect with aforementioned first embodiment.
See also Fig. 7 again, it is the schematic flow sheet of second embodiment of the invention, wherein, elder generation cut into single base plate for packaging 11B along blind hole (or the bowl hole) 13B on each each side border of base plate for packaging 11B after substrate manufacture was finished, form frame dam 20B at each base plate for packaging 11B end face again, stick together image sensor crystal grain 3B more respectively, use a glass plate 4B capping at last, to produce image sensor.
The image sensor made from the method for present embodiment, even if use when sticking together frame dam 20B viscose improper, and the generation viscose is spilled over to the phenomenon of base plate for packaging 11B side, also can be because of blind hole 13B only in the bottom of base plate for packaging 11B indent, therefore the viscose that overflows can not stretched to the metal attached to blind hole 13B surface, therefore, during the image sensor welding, climb tin still can with the metal solid welding attached to blind hole 13B surface, as shown in Figure 8, and can keep the welding reliability.
By the explanation of aforementioned each embodiment as can be known, various embodiments of the present invention are with identical method for preparing substrate, the different frame dam generation type of arranging in pairs or groups or carry out cutting step, the reliability in the time of all can improving the image sensor surface mount in different programs.
Please consult shown in Figure 9 again, it is the vertical view behind the substrate linking frame dam of third embodiment of the invention, in the present embodiment, be in the light shield etching process, form a crystal cup 16C in region surrounded central authorities of many internal wiring 15C institutes of base plate for packaging 11C end face, this crystal cup 16C is the form that is a square frame.Because the grounding leg of image sensor crystal grain all is set at the periphery of image sensor crystal grain bottom surface, therefore, the present invention is designed to the square frame form with crystal cup 16C can be easily for arbitrary orientation ground connection around the image sensor crystal grain, thus, just can be under the preceding topic of the circuit layout that does not influence image sensor crystal grain inside, design by the crystal cup 16C of square frame shape and significantly to reduce gold-plated area, to reach the effect that reduces manufacturing cost.
Claims (10)
1. method of making image sensor, it is characterized in that, its step is as follows: it is that a substrate is formulated for the base plate for packaging zone that a plurality of matrix forms are arranged, this substrate two sides is defined as an end face and a bottom surface respectively, with the top of light shield etching mode at substrate, the metal level of bottom surface forms many internal wirings and external connection respectively, the corresponding external connection of each base plate for packaging position is drilled with a blind hole or bowl hole respectively, and be the blind hole center with each base plate for packaging side border, each internal wiring of each base plate for packaging is communicated with by a through hole that is drilled with respectively with external connection, a metal level is established in plating in each blind hole and each through hole, and each external connection all becomes electrical communication with an internal wiring by the metal level in the through hole;
By the substrate that abovementioned steps forms, each base plate for packaging zone end face forms frame dam, sticks together respectively behind the image sensor crystal grain with a glass plate capping again, cuts along each side border of each base plate for packaging at last, to produce image sensor.
2. the method for manufacturing image sensor according to claim 1, it is characterized in that described formation frame dam is that a grid-like cover plate with a plurality of windows is attached on the substrate, the internal wiring of each base plate for packaging is exposed in the window of cover plate, on each base plate for packaging, to form a frame dam by this cover plate.
3. the method for manufacturing image sensor according to claim 1 is characterized in that described formation frame dam is that the substrate that etching forms many inside and outside wiring is placed mould, and directly forms the frame dam with injection molding method on each base plate for packaging.
4. the method for manufacturing image sensor according to claim 1 is characterized in that the position of the through hole that is drilled with on described each base plate for packaging, is to drop on each internal wiring and the external connection scope is positioned at below, frame dam.
5. the method for manufacturing image sensor according to claim 1, it is characterized in that described each base plate for packaging end face forms a crystal cup in many region surrounded central authorities of internal wiring institute, this crystal cup is to be a square frame form, for arbitrary orientation ground connection around the image sensor crystal grain.
6. method of making image sensor, it is characterized in that, it is that a substrate is formulated for the base plate for packaging zone that a plurality of matrix forms are arranged, this substrate two sides is defined as an end face and a bottom surface respectively, with the top of light shield etching mode at substrate, the metal level of bottom surface forms many internal wirings and external connection respectively, the corresponding external connection of each base plate for packaging position is drilled with a blind hole respectively, and be the blind hole center with each base plate for packaging side border, each internal wiring of each base plate for packaging is communicated with by a through hole that is drilled with respectively with external connection, and a metal level is established in plating in each blind hole and each through hole, and each external connection all becomes electrical communication by the metal level in the through hole with an internal wiring;
Substrate by abovementioned steps forms cuts into single base plate for packaging along each side border of each base plate for packaging earlier, forms the frame dam at each base plate for packaging end face again, and sticks together respectively behind the image sensor crystal grain with a glass plate capping, to produce image sensor.
7. the method for manufacturing image sensor according to claim 6 is characterized in that described formation frame dam is that a frame dam is attached on the substrate, and this frame dam has a window, and the internal wiring of each base plate for packaging is exposed in the window on frame dam.
8. the method for manufacturing image sensor according to claim 6 is characterized in that described formation frame dam is that the base plate for packaging that etching forms many inside and outside wiring is placed mould, and directly forms the frame dam with injection molding method on each base plate for packaging.
9. the method for manufacturing image sensor according to claim 6 is characterized in that the position of the through hole that is drilled with on described each base plate for packaging, is to drop on each internal wiring and the external connection scope is positioned at below, frame dam.
10. the method for manufacturing image sensor according to claim 6, it is characterized in that described each base plate for packaging end face forms a crystal cup in many region surrounded central authorities of internal wiring institute, this crystal cup is to be a square frame, for arbitrary orientation ground connection around the image sensor crystal grain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101071415A CN1547247A (en) | 2003-11-28 | 2003-11-28 | Method for manufacturing image sensor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2003101071415A CN1547247A (en) | 2003-11-28 | 2003-11-28 | Method for manufacturing image sensor |
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| Publication Number | Publication Date |
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| CN1547247A true CN1547247A (en) | 2004-11-17 |
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| CNA2003101071415A Pending CN1547247A (en) | 2003-11-28 | 2003-11-28 | Method for manufacturing image sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101599470A (en) * | 2008-06-06 | 2009-12-09 | 罗伯特·博世有限公司 | Sensor cluster and the method that is used to make sensor cluster |
-
2003
- 2003-11-28 CN CNA2003101071415A patent/CN1547247A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101599470A (en) * | 2008-06-06 | 2009-12-09 | 罗伯特·博世有限公司 | Sensor cluster and the method that is used to make sensor cluster |
| CN101599470B (en) * | 2008-06-06 | 2014-12-24 | 罗伯特·博世有限公司 | Sensor assembly and method for manufacturing the same |
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