CN1543075A - 压控振荡器的捕获范围控制机构 - Google Patents

压控振荡器的捕获范围控制机构 Download PDF

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CN1543075A
CN1543075A CNA2004100376872A CN200410037687A CN1543075A CN 1543075 A CN1543075 A CN 1543075A CN A2004100376872 A CNA2004100376872 A CN A2004100376872A CN 200410037687 A CN200410037687 A CN 200410037687A CN 1543075 A CN1543075 A CN 1543075A
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兰吉特·辛格
优素福·福赞
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西蒙·约翰·斯基尔斯坎
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哈齐姆·阿卜杜勒－马吉德
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Microsemi Semiconductor AB
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1209—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair.
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
    • H03L7/093—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using special filtering or amplification characteristics in the loop

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Abstract

本发明涉及一种压控振荡器，所述压控振荡器产生其频率与施加到控制端的控制电压的第一函数成正比的输出信号。压控振荡器具有工作频率的宽范围。增益调节电路调节压控振荡器的增益，使第一函数与增益的第二函数成正比。在一个优选实施例中，增益调节电路包括一个可变阻抗，该可变阻抗可以是外部阻抗，或者与振荡器核心电路一起被集成到一个公共芯片上。

Description

压控振荡器的捕获范围控制机构
技术领域
本发明涉及压控振荡器电路，例如在被制作为单片集成电路的锁相环中使用的压控振荡电路。
背景技术
振荡器的振荡频率通常用控制电压调整。这样的振荡被称之为压控振荡器(VCO)。在某些实施中，控制电压改变相互串联的多个反相器的一个和所有反相器的电流源。在其它实施中，控制电压改变电感/电容谐振器的电容量。
在典型的集成电路实施中，具有随控制电压变化的电容量的电路元件是集电极变容二极管。它可以是一个用作可变电容器的二极管，其结电容根据反向偏置电压而变化，或者是一个MOS变容二极管，其增强区或耗尽区受表面场效应晶体管栅极的控制，并且与栅极电压对漏极/源极电压的函数成正比。在这种实施中，漏极或源极通常被连接在一起。在这两种情况中，电容以一种非线性方式改变，使其以控制电压变化。振荡频率的变化也依次以一种非线性方式改变，使其以谐振器的电容变化(实际上与1/√(LC)成正比)。总的结果是，按照(频率变化)/(控制电压变化)之比调节的振荡器的增益随着所施加的控制电压而变。在许多应用中，比如用于蜂窝电话的频率合成器、用于电话系统SONET光链路的锁相环，希望最小化这种增益。锁相环通常包括：一个测量基准时钟与反馈信号之间相位偏差的相位检测器；一个电荷泵，其将已检测相位差转换成源电流或者吸收电流，这两个电流在相当于该相位差期间的期间内变化；一个由某些电阻和电容器组合而成的环路滤波器，所述电容器累积产生一个变化电压的电荷泵的电荷。该电压被直接馈送给振荡器或者通过一个缓冲电路。
VCO的低增益有助于最佳化系统特性，比如相位噪声、输出时钟抖动、电源抗扰度或者PLL阻尼因数。如果降低VCO的增益，则就控制电压的给定范围而言，还减少了PLL捕获范围。如果在制造后，振荡器具有其预期的谐振频率或谐振频率范围与系统(包括VCO和辅助电路)的频率或频率范围之间的偏差，则集成电路变得不可用。
现有技术已经关注利用芯片内技术方案的VCO调谐方法。例如，Welland的美国专利US6,137,372和Bisanti等人的美国专利公开第2002/0033739A1号，利用加法电路或减法电路元件解决压控振荡器(VCO)的调谐捕获范围的问题，在这两个案子中，是调谐VCO内的电容。这些方法允许对VCO中的制造偏差调整VCO的构造，并且可以补偿电路操作中的环境条件的变化，比如温度变化，但是其缺点是：当增加或者移除电容器时，突然地改变振荡器的振荡频率。美国专利US6,211,745和US6,137,373承认了这一缺点，US6,211,745第14栏51行写到“当VCO 500被用于这样一种系统时，方法800最好在接收和发射话音/数据的时隙期间避免VCO的校准”，US6,137,373第9栏49行写到“需要时，离散控制502可以连续监视输出频率(fout)102。如果检测误差太大，则离散控制502可以后移开关(SW)512，以选择初始控制节点510，并根据预期的处理过程修改数字控制字(Bc)404”。频率的突然改变对整个系统性能是有害的，因为VCO与输入基准之间的频率差将产生输出时钟的相位漂移，直至PLL重新同步。
在美国专利US5,912,595中，D/A(数模)变换器利用切换到离散电平的控制电压调谐VCO频率。该切换是对温度变化的补偿，以便最小化VCO输出频率的变化。由于该切换在调谐电压中再次创建了离散电压电平，因此每次切换动作将产生VCO控制电压的一个台阶，从而造成具有伴随问题的VCO频率的突然变化。
美国专利公开第20030089381号披露了一种具有数字可控增益补偿的锁相环的压控振荡器，使用了数模变换器并且需要电路元件的接通和切断。
美国专利US6,670,861涉及宽带调制求和网络方面的宽频范围，该求和网络调节馈入一个VCO和一个控制已调信号的比例的校准增益电路的电压。该专利需要实施计数器和运算放大器。
发明概述
根据本发明，提供了一种具有宽工作频率的压控振荡器，该振荡器产生一个其频率与施加到控制端的控制电压的第一函数成正比的输出信号，其中该压控振荡器还包括调节其增益的增益调节电路，使第一函数与增益的第二函数成正比。
根据本发明的原理，应当设计用于更宽振荡频率范围的VCO。这一设计能够保证，不论制造过程容差和器件工作条件是否发生变化，都能够以VCO提供预期频率的操作的方式选择控制电压。实现此目的的手段之一是，借助接近正向偏压区或者甚至进入该正向偏压区的调谐范围偏置变容二极管，以极大地增加它的电容。
一旦借助足够高的VCO增益实现大频率捕获范围，就可以插入一个可变增益电路，以作为对VCO控制电压的缓冲器。该缓冲器还可以用来引入变化的输入控制电压与VCO控制电压之间的DC偏置。
缓冲器的输入电压变化与输出电压变化之间的增益可以利用一个电阻器来调节。该电阻器设置在芯片外，以消除在集成电路制作中对制造容差的依赖性，或者该电阻器可以是一个芯片上的电阻器，作为包含一个校准装置的芯片上实施中的粗控制器来调整其电阻值。外部电阻器的阻值的增加扩展了振荡器的调谐范围。
本发明还提供了一种扩展压控振荡器的范围的方法，所述压控振荡器产生依赖控制电压的输出频率，包括：提供一个增益调整电路来调节所述压控振荡器的增益；调节所述增益调整电路，以设置所述压控振荡器的增益，从而提供预期工作范围。
下面将结合附图通过实例详细说明本发明。
附图说明
图1是普通锁相环元件的方框图；
图2显示了LC压控振荡器；
图3显示了作为二极管压降的函数的变容二极管的典型变化；
图4是本发明的压控振荡器的方框图；
图5a、图5b和图5c显示了依据图4的电阻器Rtune的可能的可替代实施；和
图6显示了VCO增益中的被测变化以及作为外部(芯片外)电阻器的函数的调谐范围。
具体实施方式
图1是普通锁相环的方框图。该锁相环包括：一个在其输入端接收基准信号和反馈信号的相位检测器10；一个接收相位检测器10的输出的电荷泵，其将检测的相位差转换成在相当于相位差期间的期间中变化的源电流或者吸收电流，一个压控振荡器16，其输出经由分频器18反馈到相位检测器10的输入。环路滤波器14包括电阻器20和电容器22。
图2示出了压控振荡器16，其包括：一对晶体管30，一个恒流源32，电阻器34，一对变容二极管36(可变电容电容器)，一对电感器38，和一对电容器40。输入端42从环路滤波器14接收控制电压Vctl。在操作时，控制电压Vctl改变LC电路中的变容二极管36的电容，从而改变振荡器的输出频率。
图3示出了变容二极管电容的变化。将会注意到，给定电压范围的电容变化随着接近正向偏压区而极大地增加。
在图4所示的本发明的实施例中，VCO 16的核心56位于可变增益电路44之后，可变增益电路44包括：一个FET 54，固定电阻器48、52，可变电阻器元件46和电容器50。该电路的增益可以通过调节可变电阻器46来改变，该电阻器位于增益调节端58与电源之间。
该电阻器46可以被设置在芯片外，以消除在制作集成电路中对制造容差的依赖。这样的一个电阻器在图5a中示出。在此情况中，增益调整电路的主要部分被集成在单片芯片上，该单片芯片具有压控振荡器核心56。固定电阻器48被连接到芯片上的器件焊点上，经由外部可变电阻器46连接电源。作为选择，该电阻器46可以是一个芯片上电阻器。
图5a至图5c显示了可变电阻器元件46的各种可能配置。如图5a所示，电阻器元件可以是一个简单的芯片外可变电阻器。作为选择，如图5b所示，它可以由一个包括若干可被FET开关50选择的几个固定电阻器48的电路组成。在图5c所示的实施例中，可变电阻器元件由与选择MOSFET串联的电阻器46组成，该MOSFET根据施加给晶体管52的可调电压Vtune控制流经电阻器46的电流。
如图3所示，借助接近正向偏压范围或者甚至进入该调谐范围的调谐范围偏置变容二极管36，从而极大地增强其电容。在借助足够高的VCO增益实现大频率捕获范围之后，插入可变增益电路44，以作为对VCO控制电压的缓冲器。该缓冲器可以用来引入变化输入控制电压与VCO控制电压之间的DC偏移。
缓冲器的输入电压变化与输出电压变化之间的增益可以利用一个电阻器元件46来调节。如图6所示，外部电阻器的阻值增加扩展了振荡器的调谐范围。此外，曲线的斜率随电阻值得增加而增加。斜率的增加导致更高增益以及其附带电路恶化。这表示可以借助为最终电路应用选择的最小电阻器来制造和表征电路。该选择的电阻器尽可能小地被制作，同时仍然允许振荡器产生预期输出频率范围。在图6中，显示了用于0至1.6K欧姆范围的电阻器效应。

Claims (20)

1、一种压控振荡器，该压控振荡器产生一个其频率与施加到控制端的控制电压的第一函数成正比的输出信号，其中该压控振荡器具有工作频率的宽范围并且包括调节其增益的增益调节电路，使第一函数与所述增益的第二函数成正比。
2、根据权利要求1所述的压控振荡器，其中所述增益调节电路包括确定所述增益的可调阻抗。
3、根据权利要求2所述的压控振荡器，其中所述增益调节电路包括增益调节端，所述可调阻抗位于所述增益调节端与电源端之间。
4、根据权利要求2所述的压控振荡器，其中所述增益调节电路包括一个集成部分和一个提供所述可调阻抗的外部电阻器元件。
5、根据权利要求4所述的压控振荡器，其中所述增益调节电路的所述集成部分连接单片集成电路的器件焊点，经由所述外部电阻器元件连接所述电源。
6、根据权利要求2所述的压控振荡器，其中所述可调阻抗包括N个固定阻值的电阻器，其每个可由选择晶体管选择。
7、根据权利要求6所述的压控振荡器，其中所述选择晶体管与相应的所述选择晶体管串联连接。
8、根据权利要求2所述的压控振荡器，其中所述可调阻抗包括一个其栅极连接可调电压源的MOS晶体管。
9、根据权利要求3所述的压控振荡器，其中所述可调阻抗包括一个具有第一和第二漏极/源极区和栅极的MOS晶体管，所述第一漏极/源极连接所述增益可调端，所述第二漏极/源极连接所述电源端。
10、根据权利要求9所述的压控振荡器，其中所述第一漏极/源极经由固定电阻器连接所述增益调节端。
11、根据权利要求1至10任一项所述的压控振荡器，包括一个储能电路，其包含电感元件和电容元件，所述电容元件包含一个或多个变容二极管，其中所述增益调节电路还充当电平移动器，以提供相对于振荡端的静态电压正向或反向偏置所述变容二极管的DC偏移。
12、一种压控振荡器，包括：
一个振荡器核心电路，用于产生依赖于控制电压的输出频率；和
一个增益调节电路，用于调节所述振荡器核心电路的增益。
13、根据权利要求12所述的压控振荡器，其中所述增益调节电路还充当一个电平移动器，以提供用于所述控制电压的DC偏移。
14、根据权利要求13所述的压控振荡器，其中所述增益调节电路包括一个可调阻抗。
15、根据权利要求14所述的压控振荡器，其中所述增益调节电路的主要部分与所述振荡器核心电路被集成在单片芯片上，所述可变阻抗在所述芯片之外。
16、根据权利要求13所述的压控振荡器，包括一个包含电感元件和电容元件的储能电路，所述电容元件包括一个或多个变容二极管，其中所述增益调节电路把所述DC偏移施加到所述变容二极管的输入端。
17、一种扩展压控振荡器的范围的方法，所述压控振荡器产生依赖于控制电压的输出频率，包括：
提供一个调节所述压控振荡器的增益的增益调节电路；
调节所述增益调节电路，以调整所述压控振荡器的增益，从而提供预期工作范围。
18、根据权利要求17所述的方法，其中所述增益通过可调阻抗调节，其中选择与预期工作范围相适应的最小阻抗。
19、根据权利要求18所述的方法，其中所述可调阻抗被设置在芯片外。
20、根据权利要求17所述的方法，其中所述增益调节电路还提供一个DC偏移，以反向或正向偏置所述压控振荡器，以便增大其工作范围。
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