CN1531119A - 具高效率散热的发光二极管模块 - Google Patents

具高效率散热的发光二极管模块 Download PDF

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CN1531119A
CN1531119A CNA03120015XA CN03120015A CN1531119A CN 1531119 A CN1531119 A CN 1531119A CN A03120015X A CNA03120015X A CN A03120015XA CN 03120015 A CN03120015 A CN 03120015A CN 1531119 A CN1531119 A CN 1531119A
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CN100379034C (zh
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林定皓
郭礼维
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Gaolu Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

本发明涉及一种具高效率散热的发光二极管模块,主要是于一良导热体构成的线路层上经装芯片、打线、封胶等步骤后产生多个发光二极管,线路层底面直接或通过导热胶与一散热片连结,当发光二极管导通工作时,其热能可通过导热胶快速传导至散热片上,利用其上较大的散热面积产生高效率的散热作用。

Description

具高效率散热的发光二极管模块
技术领域
本发明涉及一种具高效率散热的发光二极管模块,尤指一种可在发光二极管集体点亮时产生高效率散热作用的模块化发光单元。
背景技术
如熟悉电子元件特性者所知,发光二极管具有工作寿命长、低耗电、低工作热能等优点,早年由于发光二极管未能开发多种类的色光及亮度有限等限制,在用途上较受局限,时至今日,蓝色光、白色光发光二极管相继问世,且亮度亦有显著增进,故今日发光二极管不仅广泛运用于各显示用途,甚至已成功地跨足照明领域。故发光二极管在民生用途上的发展,其前景将不可限量。即使如此,发光二极管在作为显示器的画素显示单元或灯具使用时,因同时使用大量的发光二极管,且同一时间亦有多个发光二极管被点亮,在此状况下,集体点亮的多个发光二极管仍将产生较多的废热,其热能虽不及钨丝灯泡的高热,如不能予以有效挥散,仍可能造成相关电路无法正常工作,由此可见,即使是以低热能见长的发光二极管,其集体工作时产生的废热仍不容忽视。
发明内容
本发明的主要目的在于提供一种可在发光二极管集体点亮时产生高效率散热作用的发光二极管模块。
为达成前述目的,本发明采取的主要技术手段是提供一种具高效率散热的发光二极管模块,包括有:
一线路层,于高导热材料上形成特定的线路布局,并可供制作多个发光二极管,同时使其通过线路相互连接,并据以与外部的控制电路连接;
多个发光二极管,在前述线路层上经过装芯片、打线、封胶等步骤后所构成,并通过线路层的线路以相互连接;
一散热片,结合于线路层的底面,其提供较大的散热面积。
以前述的发光二极管模块设计,当发光二极管被驱动而集体点亮时,因线路层由高导热材料构成,其热能可迅速传导至散热片,利用散热片提供的大面积以快速散热。
前述线路层具有多数的成对接点,供安装芯片与打线,以构成发光二极管。
前述线路层各成对接点呈矩阵排列,各相邻成对接点间形成有阵列状的隔墙,从而每一发光二极管构成独立的画素,作为画面显示之用。
前述散热片与线路层底面直接接触。
前述散热片通过导热胶结合于线路层底面。
前述的发光二极管模块作为灯具用途。
前述的发光二极管模器作为显示器用途。
附图说明
图1为本发明一较佳实施例的平面图;
图2A~D为本发明一较佳实施例的制程示意图;
图3为本发明又一较佳实施例的平面图;
图4为本发明一较佳实施例的一应用实施例示意图;
图5为前述应用实施例的延伸设计示意图。
图中符号说明
10          发光二极管模块    100    线路层
101、102    接点              103    隔墙
20          发光二极管        21     芯片
22          金线              23     封胶
30          散热片            31     导热胶
40          基座              41     灯具接头
42          灯罩              50     风扇
具体实施方式
下面结合附图和实施例详细说明本发明的具体实施方式。
有关本发明的一较佳实施例如图1所示,该发光二极管模块10包括有:
一线路层100,于高导热材料上形成特定的线路布局;
多个发光二极管20,在前述线路层上经过装芯片、打线、封胶等步骤后所构成,并通过该线路层100的线路以相互连接;
一散热片30,通过线路层100底层的绝缘氧化层与其直接接触,或通过导热胶31结合于线路层100的底面,以提供较大的散热面积。
由上述说明可看出本发明一较佳实施例的基本组成,为说明其具体构造,针对其大致制程说明如下:
主要以散热片30为基材,在其上制作线路层100,并相互结合。其一种方式是先在散热片30表面形成氧化层后建立铜线路以构成线路层100,遂线路层100即通过该氧化层与散热片30直接接触;其另种方式如图2A、B所示,在散热片30底面涂布一层导热胶31,该导热胶31可为DLC,其上层再制一高电导金属材料(如图2C所示),于本实施例中采用铜材,随后利用图案转移、曝光显影、蚀刻等已知的线路制作步骤在高电导金属材料上形成多个成对接点101、102(如图2D所示),随即构成一线路层100。
经完成前述步骤后,即如图1所示,在线路层100上安装芯片21,并打上金线22或铝线,使其分别与成对接点101、102连接,再经封胶形成胶层23,即可令各个成对接点101、102配合其上的芯片21分别构成一发光二极管20。由于发光二极管20通过线路层100上的线路相互连接,故亦可通过线路层100与外部的控制/驱动电路连接,并受其控制。
以前述的发光二极管模块10设计,当发光二极管20被驱动而集体点亮时,因线路层100由高电导金属与导热材料构成,其热能可迅速地经由导热机制传导至散热片30,利用散热片30上多数鳍片与空气接触的较大面积以快速散热。
又请参阅图3所示,为本发明又一较佳实施例的剖视图,其基本构造与前一实施例大致相同,不同处在于:该线路层100上各成对接点101、102呈矩阵或规则排列,各相邻成对接点101、102间分别形成隔墙103,又在隔墙103内分别安装芯片21,并打上金线22或铝线,再于隔墙103内注入封胶23,从而令每一发光二极管20构成独立的画素,作为画面显示之用。而前述隔墙103内安装的芯片21可为单色或多色芯片。
由上述说明可看出本发明不同实施例的具体构造,至于其一可行的应用实施例请参阅图4所示,其是作为灯具的光源,主要将前述发光二极管模块10固定于一基座40上,基座40底端设有一灯具接头41,供安装在灯座上;又基座40内设有控制电路(图中未示),其分别与前述灯具接头41及发光二极管模块10的线路层100连接;当前述构造以灯具接头41接上灯座并通电后,即可通过线路层100点亮其上的发光二极管20,而发光二极管20集体点亮后所产生的热能,仍将快速地经由线路层100、导热胶31传导至散热片30上的各个鳍片表面而予以快速挥散。再基座40外设有一灯罩42,该灯罩42可为透光、半透光或不透光者,如为透光、半透光者,利用该灯罩42透光时产生装饰效果,如为不透光者则作为导光、聚光之用。
又如图5所示,为前述应用实施例的延伸设计,主要是在散热片30的各鳍片上设一风扇50,该风扇50仍受内设的控制/驱动电路控制。利用该风扇50于发光二极管20工作时运转,以强制驱散热片30表面的热能,进而提高散热效率。
经上述说明可看出本发明不同的实施构造与不同应用实施例的具体结构,以该等设计主要在解决发光二极管在同一位置集体点亮时的散热问题,并可有效排除因热能而可能发生的不正常工作状况。

Claims (9)

1.一种具高效率散热的发光二极管模块,其特征在于,其包括有:
一线路层,于高电导金属材料上形成特定的线路布局,并可供制作多个发光二极管,同时使其通过线路相互连接,并据以与外部的控制电路连接;
多个发光二极管,在前述线路层上经过安装芯片、打线、封胶等步骤后所构成,并通过线路层的线路以相互连接;
一散热片,结合于线路层的底面,其提供较大的散热面积。
2.如权利要求1所述的具高效率散热的发光二极管模块,其特征在于,该线路层具有多数的成对接点,供安装芯片与打线,以构成发光二极管。
3.如权利要求2所述的具高效率散热的发光二极管模块,其特征在于,该线路层各成对接点呈矩阵排列,各相邻成对接点间形成有阵列状的隔墙,从而每一发光二极管构成独立的画素,作为画面显示之用。
4.如权利要求2或3所述的具高效率散热的发光二极管模块,其特征在于,该散热片先形成氧化层后再制作铜线路以构成线路层,从而令散热片与线路层底面直接接触。
5.如权利要求2或3所述的具高效率散热的发光二极管模块,其特征在于,该散热片通过导热胶结合于线路层底面。
6.如权利要求4所述的具高效率散热的发光二极管模块,其特征在于,该散热片的各鳍片上设有一风扇。
7.如权利要求5所述的具高效率散热的发光二极管模块,其特征在于,该散热片的各鳍片上设有一风扇。
8.如权利要求1所述的具高效率散热的发光二极管模块,其特征在于,该发光二极管的芯片为单色。
9.如权利要求1所述的具高效率散热的发光二极管模块,其特征在于,该发光二极管的芯片为多色。
CNB03120015XA 2003-03-10 2003-03-10 高效散热的发光二极管模块 Expired - Fee Related CN100379034C (zh)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100384584C (zh) * 2004-12-20 2008-04-30 洪明山 发光二极管的散热结构制作方法
CN100423257C (zh) * 2006-12-20 2008-10-01 黄虎钧 具有发光二极管晶片的发光棒
CN100520153C (zh) * 2006-05-31 2009-07-29 张仲生 制造抗光衰大功率半导体照明灯的方法
CN102159886A (zh) * 2008-09-19 2011-08-17 欧司朗有限公司 具有发光二极管的照明装置
CN101886802B (zh) * 2009-05-12 2012-03-21 建准电机工业股份有限公司 灯具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1286175C (zh) * 2001-09-29 2006-11-22 杭州富阳新颖电子有限公司 大功率发光二极管发光装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100384584C (zh) * 2004-12-20 2008-04-30 洪明山 发光二极管的散热结构制作方法
CN100520153C (zh) * 2006-05-31 2009-07-29 张仲生 制造抗光衰大功率半导体照明灯的方法
CN100423257C (zh) * 2006-12-20 2008-10-01 黄虎钧 具有发光二极管晶片的发光棒
CN102159886A (zh) * 2008-09-19 2011-08-17 欧司朗有限公司 具有发光二极管的照明装置
US8686557B2 (en) 2008-09-19 2014-04-01 Osram Gesellschaft Mit Beschrankter Haftung Illumination device comprising a light-emitting diode
CN101886802B (zh) * 2009-05-12 2012-03-21 建准电机工业股份有限公司 灯具

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