CN1523678A - A thick film SOI field effect transistor - Google Patents
A thick film SOI field effect transistor Download PDFInfo
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- CN1523678A CN1523678A CNA031046622A CN03104662A CN1523678A CN 1523678 A CN1523678 A CN 1523678A CN A031046622 A CNA031046622 A CN A031046622A CN 03104662 A CN03104662 A CN 03104662A CN 1523678 A CN1523678 A CN 1523678A
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- silicon island
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Abstract
This invention discloses a thick film SOI fieldistor for providing a fieldistor that either depletes silicon film or overcomes the original kink effect and increases driving current and speed to improve short channel performance. A thick film SOI fieldistor includes a source zone, a drain zone, a grating oxidation layer, a buried oxidation layer, a back grating, silicon film, a substrate and a channel, an inverse doped special silicon island is set at the interface closed to the back grating allowing large wave of its thickness, width, doped density and position in design to provide a broad design space for thick film SOI devices.
Description
Technical field
The present invention relates to a kind of semiconductor device, particularly a kind of thick film SOI field-effect transistor.
Background technology
SOI (Silicon-on-Insulator) technology has become the optimization technique of high speed, low-voltage and low-power dissipation integrated circuit through the development of two more than ten years.Compare with the body silicon technology, the SOI technology has incomparable superiority.Advantages such as the SOI device has that parasitic junction capacitance is little, anti-radiation performance good, anti-parasitic latch-up, adopted widely by now industrial quarters institute (J.P.Coling,, 2
NdEdition, Kluwer Academic Pub., 2000, KeithDiefendorff, Microprocessor Report, Vol.12, No.4, August 24,1998).But the thick film SOI device when drain voltage is higher, can occur the Kink effect because there is neutral tagma in the silicon fiml part depletion, and the leakage current of device is promptly increased, and influences the performance of device, has limited the application of thick film device greatly.People are in order to solve the influence of the intrinsic Kink effect of thick film SOI device to device performance, and the attenuate silicon film thickness makes silicon fiml be in full spent condition as far as possible.Film exhausts (FD) SOI device entirely can eliminate the Kink effect, effectively the short-channel effect of suppression device (SCE), improve the subthreshold characteristic, improve mutual conductance (the S.Maeda et al. of device, IEDM Tech.Dig., Page (s): 129-132,1996, M.J.Sheron et al., IEEE Electron Device Letter, Volume:16, Issue:3, March, 1995).Yet the threshold voltage of film F DSOI device is very responsive to the variation of silicon film thickness, and is also more and more harsher to the requirement of silicon fiml evenness along with silicon fiml is more and more thinner, and this just makes the material preparation of thin film SOI device become very difficult.
Summary of the invention
The purpose of this invention is to provide a kind of thick film SOI field-effect transistor, both can realize that silicon fiml exhausts entirely, can overcome the intrinsic Kink effect of SOI device again, can also increase the drive current of device simultaneously, raising speed is improved short ditch performance.
For achieving the above object, the present invention takes following technical scheme: a kind of thick film SOI field-effect transistor, it comprises source region, drain region, gate oxide, bury oxide layer, the body of the thick film SOI field-effect transistor of back of the body grid, silicon fiml, substrate and raceway groove, is provided with the special-shaped silicon island of a phase contra-doping at the interface near described back of the body grid.
The special-shaped silicon island of optimizing should be positioned at the bottom center place of silicon fiml.
Each Parameter Optimization scope of described special-shaped silicon island is: special-shaped silicon island width is about 3/5ths of described channel length; Thickness equals half of described silicon film thickness; Described special-shaped silicon island doping content is higher than the doping content of described silicon fiml.
Realize that a kind of concrete preferred version of the present invention is: special-shaped silicon island is positioned at the bottom center place of silicon fiml, and channel length L=1 μ m, silicon film thickness are t
Si=0.4 μ m, gate oxide thickness t
Ox=20nm, source-drain area doping content Nn
+=1 * 10
20Cm
-3, the silicon fiml doping content is Filmdoping=1 * 10
17Cm
-3, bury oxidated layer thickness t
Box=0.2 μ m, substrate doping Np
-=5 * 10
16Cm
-3, thickness t
Sub=0.3 μ m; The excursion of special-shaped silicon island doping content is 1 * 10
17Cm
-3-5 * 10
18Cm
-3Between; The scope of design of silicon island thickness T is between the 0.18 μ m-0.28 μ m; Silicon island half width W is between 0.25 μ m-0.3 μ m.
Up to now, still do not have bibliographical information and how to realize that the silicon fiml of thick film SOI device exhausts entirely, to eliminate the Kink effect.Special-shaped silicon island provided by the present invention SOI field-effect transistor not only overcome the thick film SOI field-effect transistor intrinsic Kink effect, the drive current of device also increases greatly, makes the device operating rate improve greatly.The design of special-shaped silicon island allows its thickness, width, doping content and position to have than great fluctuation process, for the thick film SOI device provides a more wide design and application space.
Description of drawings
Fig. 1 is a thick film SOI field-effect transistor structure schematic diagram of the present invention
Fig. 2 (a) is the influence of the variation of silicon island half width to the input-output characteristic of special-shaped silicon island SOI device
Fig. 2 (b) is the influence of the variation of silicon island half width to the transfer characteristic of special-shaped silicon island SOI device
Fig. 3 (a) is the influence of the variation of silicon island thickness to the input-output characteristic of special-shaped silicon island SOI device
Fig. 3 (b) is the influence of the variation of silicon island thickness to the transfer characteristic of special-shaped silicon island SOI device
Fig. 4 (a) is the influence of the variation of silicon island doping content to the input-output characteristic of special-shaped silicon island SOI device
Fig. 4 (b) is the influence of the variation of silicon island doping content to the transfer characteristic of special-shaped silicon island SOI device
Fig. 5 (a) is the influence of the variation of silicon island concentration to the input-output characteristic of special-shaped silicon island SOI device
Fig. 5 (b) is the influence of the variation of silicon island concentration to the transfer characteristic of special-shaped silicon island SOI device
Fig. 5 (c) is the influence of the variation of silicon island concentration to the groove potential distribution of special-shaped silicon island SOI device
Fig. 6 (a) is the comparative result of the input-output characteristic of the special-shaped silicon island SOI field-effect transistor optimized and conventional thick film SOI field-effect transistor
Fig. 6 (b) is the comparative result of the speed characteristics of the reverser of the special-shaped silicon island SOI field-effect transistor optimized and conventional thick film SOI field-effect transistor
Fig. 6 (c) is the comparative result of the short-channel properties of the device of the special-shaped silicon island SOI field-effect transistor optimized and conventional thick film SOI field-effect transistor
Embodiment
For the performance of device provided by the present invention is described, with two-dimensional device simulation softward DESSIS ISE (6.0 version) structural parameters of special-shaped silicon island field-effect transistor has been carried out optimizing and analyzed.And compare with the characteristic of conventional structure (being the thick film part depletion) field-effect transistor.As shown in Figure 1, thick film SOI field-effect transistor of the present invention comprises source region 1, drain region 2, gate oxide 3, buries oxide layer 4, the body of the thick film SOI field-effect transistor of back of the body grid 5, silicon fiml 6, substrate 7 and raceway groove 8, is provided with the special-shaped silicon island 9 of a phase contra-doping at the interface near described back of the body grid.The parameter of device is as follows in the simulation: channel length L=1 μ m, silicon film thickness are t
Si=0.4 μ m, gate oxide thickness t
Ox=20nm, source-drain area doping content Nn
+=1 * 10
20Cm
-3, the silicon fiml doping content is Filmdoping=1 * 10
17Cm
-3, bury oxidated layer thickness t
Box=0.2 μ m, substrate doping Np
-=5 * 10
16Cm
-3, thickness t
Sub=0.3 μ m.Adopt fluid dynamics and quantum effect model in the simulation; Composite model has adopted SRH, Auger, Band2band and Avalanche model; The mobility model has adopted doping Dependence, High fieldsaturation, Enormal and PhuMob model.
Embodiment 1: the variation of SOI device silicon island, special-shaped silicon island half width is to the influence (silicon island is positioned at trench bottom central authorities) of input-output characteristic and transfer characteristic
Fig. 2 (a) (b) has provided the variation of silicon island half width respectively to the input-output characteristic of special-shaped silicon island SOI device and the influence of transfer characteristic.Wherein, silicon island thickness T=0.2 μ m, Doping=5 * 10
17Cm
-3By Fig. 2 (a) as can be known, when the half width W=0.25 μ m of silicon island, the Kink effect of thick film SOI device is eliminated, and raceway groove inside exhausts entirely, and the drive current of device increases; Constantly increase with the silicon island half width, drive current also constantly increases; And silicon island half width W=0.3 μ m is a relatively more responsive value, and when silicon island half width W＞0.3 μ m, pipe just becomes and is very easy to puncture.Its reason can obtain explaining from Fig. 2 (b).As can be seen, behind silicon island half width W＞0.3 μ m, significantly drift takes place in the threshold voltage of device, the knot depletion layer of silicon island all exhausts raceway groove inside, but when the silicon island width is excessive, the source end potential barrier of device is reduced, threshold voltage reduces, supersaturation voltage (V
G-V
T) increase, the pipe easier unlatching that becomes, saturation drive current is bigger, thereby, the easier puncture of device.So as can be known, when silicon island thickness T=0.2 μ m, Doping=5 * 10
17Cm
-3The time, desirable silicon island half width W is between 0.25 μ m-0.3 μ m.The SOI device of silicon island half width in this scope can be eliminated the Kink effect of the full depleted device of thick film on the one hand, and the saturation drive current of device increases on the other hand, and leakage current is very little, and the puncture voltage of pipe is also higher simultaneously.
Embodiment 2: the variation of silicon island thickness is to the input-output characteristic of special-shaped silicon island SOI device and the influence (silicon island is positioned at trench bottom central authorities) of transfer characteristic
Fig. 3 (a) (b) has provided the variation of silicon island thickness respectively to the input-output characteristic of special-shaped silicon island SOI device and the influence (silicon island is positioned at trench bottom central authorities) of transfer characteristic.Wherein, silicon island half width W=0.3 μ m, Doping=5 * 10
17Cm
-3By Fig. 3 (a) as can be seen, as silicon island thickness T=0.2 μ m, when also being half place of silicon film thickness, the Kink phenomenon of curve of output is eliminated substantially, and raceway groove inside has realized exhausting entirely.When silicon island thickness further increased, the saturation drive current of device then further increased, especially when silicon island thickness when T=0.3 μ m changes to T=0.35 μ m, the drive current of device sharply increases.The increase of silicon island thickness makes the saturation region of SOI device and the voltage width between the breakdown region also diminish gradually, and pipe becomes and is easy to puncture.Fig. 3 .5 (b) also shows, when silicon island thickness T＞0.25 μ m, significantly drift takes place the threshold voltage of device.During silicon island thickness T＞0.3 μ m, leakage current has become and can not ignore.At this moment, source end potential barrier is subjected to the influence of special-shaped silicon island, has become very low, and little grid voltage just can realize the unlatching of pipe.Depress in identical grid voltage and leakage, the source end potential barrier that silicon island thickness increase causes reduces, and makes more source end charge carrier very easily to cross potential barrier, enters raceway groove, thereby form very big output current, this is the 6th shown situation of curve of Fig. 3 (a).So, when the half width W=0.3 of special-shaped silicon island μ m, doping content Doping=5 * 10
17Cm
-3The time, the scope of design of silicon island thickness T is for O.18 between the μ m-0.28 μ m.In this thickness range, special-shaped silicon island SOI device not only can be eliminated the Kink effect of thick film SOI device, and can improve the driving force of device significantly, keeps less leakage current simultaneously.
Embodiment 3: the variation of silicon island doping content is to the input-output characteristic of special-shaped silicon island SOI device and the influence (silicon island is positioned at trench bottom central authorities) of transfer characteristic
Fig. 4 (a) (b) has provided the variation of silicon island doping content respectively to the input-output characteristic of special-shaped silicon island SOI device and the influence (silicon island is positioned at trench bottom central authorities) of transfer characteristic.Wherein, silicon island half width W=0.3 μ m, silicon island thickness T=0.2 μ m.When the doping content Doping of special-shaped silicon island was very low, the silicon island did not have influence substantially to the thick film Devices Characteristics, and the silicon island doping content is low to make the pn knot depletion layer between silicon island and the raceway groove mainly be distributed in silicon island one side.But when the doping content of silicon island was can be with channel doping concentration comparable, significant variation had just taken place in the thick film device property, shown in Fig. 4 (a).When the doping content Doping of silicon island greater than silicon fiml impurity concentration Filmdoping (promptly 1 * 10
17Cm
-3) time, utilize pn knot principle as can be known, the doping content of n type silicon island is high more, the depletion layer broadening of P type channel region just many more, exhausting entirely of easy more realization raceway groove just, thus eliminated the Kink effect of thick film SOI device.Meanwhile, along with the increase of silicon island doping content, the drive current of device also increases gradually.Because the influence of threshold voltage shift and leakage current, the excursion of special-shaped silicon island doping content should be 1 * 10 but by Fig. 4 (b) as can be known,
17Cm
-3-5 * 10
18Cm
-3Between.
Embodiment 4: when the silicon island was positioned at the raceway groove center of top, the variation of silicon island concentration was to the influence of input-output characteristic, transfer characteristic and the groove potential distribution of device
Fig. 5 (a) (b) (c) has provided the influence of the variation of silicon island concentration to input-output characteristic, transfer characteristic and the groove potential distribution of device respectively.Silicon island half width W=0.3 μ m wherein, thickness T=0.2 μ m.By Fig. 5 (a) as can be known, when the doping content of silicon island surpasses the doping content of raceway groove, though also can overcome the thick film device intrinsic Kink effect, and drive current also increases along with the increase of silicon island doping content, very big drift has taken place in the threshold voltage of device, and the sub-threshold slope of device is very big but by Fig. 5 (b) again as can be known,, the leakage current of device is increased greatly, the device performance serious degradation.This is because when the silicon island is positioned at raceway groove center of top place, the surface potential of raceway groove has been produced very big influence, shown in Fig. 5 (c).Compared the groove potential distribution situation (other parameter of device is all identical) when the silicon island lays respectively at trench bottom with the raceway groove top among the figure.As can be seen, when the silicon island is positioned at raceway groove center of top place (curve 2), the surface potential of raceway groove is positioned at than the silicon island about the low 200mV of electromotive force of trench bottom centre (curve 1), the easier influence that is subjected to the drain terminal electromotive force, thus the short-channel effect of device is more remarkable.
From the above mentioned, the special-shaped silicon island of optimization should be positioned at the bottom center place of silicon fiml, as shown in Figure 1.And each Parameter Optimization scope of silicon island is: width is about 3/5ths of channel length, and thickness approximates half of silicon film thickness greatly, as long as doping content exceeds the doping content of silicon fiml.
Embodiment 5: the comparison of the speed characteristics of the special-shaped silicon island SOI field-effect transistor of optimization and the input-output characteristic of conventional thick film SOI field-effect transistor, reverser and the short-channel properties of device
Fig. 6 (a) (b) (c) has provided the comparative result of the short-channel properties of the speed characteristics of input-output characteristic, reverser of the special-shaped silicon island SOI field-effect transistor optimized and conventional thick film SOI field-effect transistor and device respectively.Wherein, the channel length L=1 μ m of two kinds of structure devices, silicon film thickness t
Si=0.4 μ m, doping content Filmdoping=1 * 10
17Cm
-3The silicon island half width W=0.3 μ m of special-shaped silicon island SOI field-effect transistor, thickness T=0.2 μ m, doping content Doping=5 * 10
17Cm
-3By Fig. 6 (a) as can be known, the thick film SOI device is because the existence of special-shaped silicon island, not only overcome its intrinsic Kink effect, and the drive current of device also increases greatly.This also makes the device operating rate improve greatly, shown in Fig. 6 (b).Under identical input waveform, the speed of the inverter that is made of special-shaped silicon island SOI field-effect transistor is faster than the speed that conventional SOI field-effect transistor constitutes inverter.Fig. 6 (c) has compared the short-channel effect of two kinds of structure devices.When channel length when 1 μ m narrows down to 0.1 μ m, the threshold voltage shift of the full depleted device of special-shaped silicon island SOI thick film is significantly less than conventional structure.When channel length L=0.1 μ m, about the little 60mV of threshold voltage shift than conventional SOI device of special-shaped silicon island SOI field-effect transistor.So special-shaped silicon island SOI field-effect transistor is that of small size SOI device selects preferably.
Claims (10)
1, a kind of thick film SOI field-effect transistor, it comprises source region, drain region, gate oxide, bury oxide layer, the body of the thick film SOI field-effect transistor of back of the body grid, silicon fiml, substrate and raceway groove, it is characterized by: the special-shaped silicon island that is provided with a phase contra-doping at the interface near described back of the body grid.
2, according to the described a kind of thick film SOI field-effect transistor of claim 1, it is characterized in that: described special-shaped silicon island is positioned at the bottom center place of silicon fiml.
3, according to claim 1 or 2 described a kind of thick film SOI field-effect transistors, it is characterized in that: described special-shaped silicon island width is about 3/5ths of described channel length.
4, according to claim 1 or 2 described a kind of thick film SOI field-effect transistors, it is characterized in that: described special-shaped silicon island thickness equals half of described silicon film thickness.
5, according to claim 1 or 2 described a kind of thick film SOI field-effect transistors, it is characterized in that: described special-shaped silicon island width is about 3/5ths of described channel length, and thickness equals half of described silicon film thickness.
6, according to claim 1 or 2 described a kind of thick film SOI field-effect transistors, it is characterized in that: described special-shaped silicon island doping content is higher than the doping content of described silicon fiml.
7, according to the described a kind of thick film SOI field-effect transistor of claim 2, it is characterized in that: described channel length L=1 μ m, silicon film thickness is t
Si=0.4 μ m, gate oxide thickness t
Ox=20nm, source-drain area doping content Nn
+=1 * 10
20Cm
-3, the silicon fiml doping content is Filmdoping=1 * 10
17Cm
-3, bury oxidated layer thickness t
Box=0.2 μ m, substrate doping Np
-=5 * 10
16Cm
-3, thickness t
Sub=0.3 μ m.
8, according to the described a kind of thick film SOI field-effect transistor of claim 7, it is characterized in that: the excursion of described special-shaped silicon island doping content is 1 * 10
17Cm
-3-5 * 10
18Cm
-3Between.
9, according to the described a kind of thick film SOI field-effect transistor of claim 7, it is characterized in that: the scope of design of described silicon island thickness T is between the 0.18 μ m-0.28 μ m;
10, a kind of thick film SOI field-effect transistor according to claim 7 is characterized in that: described silicon island half width W is between 0.25 μ m-0.3 μ m.
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|---|---|---|---|
| CN 03104662 CN1274030C (en) | 2003-02-20 | 2003-02-20 | A thick film SOI field effect transistor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208448A (en) * | 2011-05-24 | 2011-10-05 | 西安电子科技大学 | Polycrystalline Si1-xGex/metal parallel covering double-gate strained SiGe-on-insulator (SSGOI) n metal oxide semiconductor field effect transistor (MOSFET) device structure |
| WO2016023490A1 (en) * | 2014-08-12 | 2016-02-18 | 北京纳米能源与系统研究所 | Back gate field-effect transistor based on friction and contact electrification effects |
| CN113363323A (en) * | 2020-03-05 | 2021-09-07 | 苏州大学 | Single-gate field effect transistor device and method for regulating and controlling driving current of single-gate field effect transistor device |
-
2003
- 2003-02-20 CN CN 03104662 patent/CN1274030C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208448A (en) * | 2011-05-24 | 2011-10-05 | 西安电子科技大学 | Polycrystalline Si1-xGex/metal parallel covering double-gate strained SiGe-on-insulator (SSGOI) n metal oxide semiconductor field effect transistor (MOSFET) device structure |
| WO2016023490A1 (en) * | 2014-08-12 | 2016-02-18 | 北京纳米能源与系统研究所 | Back gate field-effect transistor based on friction and contact electrification effects |
| CN105470313A (en) * | 2014-08-12 | 2016-04-06 | 北京纳米能源与系统研究所 | Back-gate field effect transistor based on contact electrification |
| US9653674B2 (en) | 2014-08-12 | 2017-05-16 | Beijing Institute Of Nanoenergy And Nanosystems | Contact electrification effect-based back gate field-effect transistor |
| CN105470313B (en) * | 2014-08-12 | 2018-11-02 | 北京纳米能源与系统研究所 | Backgate field-effect transistor based on contact electrification |
| CN113363323A (en) * | 2020-03-05 | 2021-09-07 | 苏州大学 | Single-gate field effect transistor device and method for regulating and controlling driving current of single-gate field effect transistor device |
| WO2021174685A1 (en) * | 2020-03-05 | 2021-09-10 | 苏州大学 | Single gate field-effect transistor component and method for adjusting driving current thereof |
| CN113363323B (en) * | 2020-03-05 | 2023-08-18 | 苏州大学 | Single gate field effect transistor device and method for regulating and controlling driving current thereof |
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