CN1523436A - Colorful light filter production method and semi-transmissive liquid crystal display device - Google Patents
Colorful light filter production method and semi-transmissive liquid crystal display device Download PDFInfo
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- CN1523436A CN1523436A CNA2004100014890A CN200410001489A CN1523436A CN 1523436 A CN1523436 A CN 1523436A CN A2004100014890 A CNA2004100014890 A CN A2004100014890A CN 200410001489 A CN200410001489 A CN 200410001489A CN 1523436 A CN1523436 A CN 1523436A
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Abstract
The invention is a scintillation plasm backlight system used in LCD, including a first basal plate; a second basal plate approximately parallel to and separated with the first one; a gas discharging space between the two basal plates; at least an electrode pair set on the second basal plate and facing the inner surface of the first basal plate, where the electrode pair has a first and second electrodes approximately parallel to each other; a control unit coupled with the electrode pair to periodically provide energy to excite the gas between the two basal plates to discharge; a dielectric layer set on the second basal plate, facing the inner surface of the first basal plate and covering the electrode pair; and a first fluorescent layer set on the first basal plate and facing the inner surface of the second basal plate.
Description
Technical field
Relevant a kind of semi-transmission-type LCD of the present invention and preparation method thereof, and particularly relevant for semi-transmission-type LCD of a kind of colored filter with different-thickness and preparation method thereof.
Background technology
(reflective liquid crystal display RLCD) can be divided into " total-reflection type " and " semi-transmission-type " two big classes to reflective liquid-crystal display.Total-reflection type LCD is without backlight, the reflecting plate that utilization is attached on the LCD panel reflects extraneous light, benefit is very power saving, but shortcoming be darker environment can't see the display screen content and contrast relatively poor, therefore generally use front light-source as secondary light source.And semi-transmission-type LCD (transflective LCD) just uses external light source when extraneous light is enough, can light backlight when not enough, being the mode that has power saving and the auxiliary light of tool concurrently, is the preferential selection of portable liquid crystal devices such as many mobile phones, PDA(Personal Digital Assistant) and laptop computer therefore.
See also Fig. 1, Fig. 1 is for showing the synoptic diagram of an example that has semi-transmission-type LCD structure now.
The structure of existing semi-transmission-type LCD, its structure includes:
Substrate once 100 has an insulation course 110 on it;
One bottom electrode 120 is positioned on this insulation course 110, and this bottom electrode 120 has an echo area 122 and a transmission area 124, and wherein this echo area 122 for example is an aluminium lamination, and this transmission area 124 for example is indium tin oxide (ITO) layer;
One top electrode 140 is positioned on this colored filter 150; And
One liquid crystal layer 130 is arranged on this between the substrate 160 and this time substrate 100.
Yet above-mentioned existing semi-transmission-type LCD is when reflective-mode (reflective mode), and the number of times that surround lighting (ambient light, i.e. reflected light) 170 sees through colored filter 150 is twice.And when transmission mode (transmissive mode), the number of times that (backlight, i.e. transmitted light) backlight 180 sees through colored filter 150 is once.Therefore causing can't be identical at reflective-mode and Show Color under the transmission mode, that is the problem that has color density (color saturation, color purity) to differ greatly, and the display quality (display-quality) of reduction semi-transmission-type LCD.
Recently, industry proposes a kind of semi-transmission-type LCD with colored filter of different-thickness.Below utilize Fig. 2 A～2C that the colored filter manufacturing process of above-mentioned semi-transmission-type LCD is described.
At first, see also Fig. 2 A, in a substrate 200, form a transparent photic resist layer 210 of patterning earlier, the echo area (reflectiveregion) 201 of these transparent photic resist layer 210 corresponding semi-transmission-type LCD.
Then, see also Fig. 2 B, a red photic resist layer 220 that forms patterning is on part substrate 200 and partially transparent photoresist layer 210.
Then, see also Fig. 2 C, form a green photic resist layer 230 of patterning and a blue photic resist layer 240 in regular turn on part substrate 200 and partially transparent photoresist layer 210.So, existing colored filter 250 with different-thickness is promptly finished.
Yet, owing to must in substrate 200, form transparent photic resist layer 210 earlier in the existing technology, thereby need to increase by one photomask, and increase cost.And, be coated on the surface and the unevenness of the photic resist layer 220 of this redness on the transparent photic resist layer 210, green photic resist layer 230 and blue photic resist layer 240, that is existing technology wayward should the photic resist layer 220 of redness, the thickness of green photic resist layer 230 and blue photic resist layer 240, thereby be difficult for solving fully the problem that color density (color saturation, color purity) differs.
Summary of the invention
In view of this, a purpose of the present invention is to provide a kind of semi-transmission-type LCD, it is characterized in that it has the colored filter of different-thickness.
Another object of the present invention is to provide a kind of colored filter with different-thickness, is mainly used in semi-transmission-type LCD.
Another purpose again of the present invention is to provide a kind of preparation method with colored filter of different-thickness.
For reaching above-mentioned purpose, the invention provides a kind of transflective liquid crystal display device with different-thickness colored filter, wherein first substrate and the second substrate subtend are provided with, colored filter is positioned in first substrate, and the colored filter of corresponding transmission area has first thickness, the colored filter of corresponding echo area has second thickness, and first thickness is greater than second thickness.In addition, liquid crystal layer is located between second substrate and the colored filter.
In the above-mentioned transflective liquid crystal display device with different-thickness colored filter, first substrate is substrate down, and comprises thin film transistor (TFT) array, and second substrate is last substrate.Perhaps, second substrate is substrate down, and comprises a thin film transistor (TFT) array, and first substrate is last substrate.
Wherein, have the different-thickness manufacturing method of color filters, comprise the following steps: that (a) provides a substrate, this substrate has one first district and one second district; (b) form the photic resist layer of a thick colour in this substrate; And (c) by this thick colour photic resist layer of photo-mask process removal part position in this second district, and form a thin colored photic resist layer in this substrate in this second district of position.
Wherein, the transmission area (transmissive region) of the corresponding semi-transmission-type LCD in this first district (transflective LCD), and the echo area (reflective region) of the corresponding semi-transmission-type LCD in this second district (transflective LCD).
Also have, the method for this thick colour photic resist layer of removal part position in this second district of step (c) is by utilizing photomask to expose and developing and reach.Wherein, when the photic resist layer of this thick colour was made up of positive light anti-etching agent, the photomask of use comprised corresponding to the complete light-shielding pattern in first district and corresponding to the part printing opacity pattern in second district.When the photic resist layer of this thick colour was made up of the negative type photoresist agent, the photomask of use comprised corresponding to the complete printing opacity pattern in first district and corresponding to the part printing opacity pattern in second district.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the synoptic diagram that shows an example of existing semi-transmission-type LCD structure;
Fig. 2 A～2C shows existing process section with colored filter of different-thickness;
Fig. 3 A～3C shows the process section with colored filter of different-thickness of the present invention;
Fig. 4 shows when colored photoresist is positive light anti-etching agent, looks synoptic diagram on the photomask of the present invention;
Fig. 5 shows when colored photoresist is negative type photoresist, looks synoptic diagram on the photomask of the present invention;
Fig. 6 shows the colored filter with different-thickness of the present invention, is applied to the structural representation of half transmission type LCD device; And
Fig. 7 shows the colored filter with different-thickness of the present invention, is applied to the structural representation of another type semi-transmission-type LCD device.
Description of reference numerals
Existing part (Fig. 1, Fig. 2 A～2C)
100～following substrate; 110～insulation course; 120～bottom electrode; 122～echo area; 124～transmission area; 130～liquid crystal layer; 140～top electrode; 150～colored filter; 160～upward substrate; 170～exterior light (being reflected light); 180～(being transmitted light) backlight; 200～substrate; 201～echo area; 210～transparent photic resist layer; 220～red photic resist layer; 230～green photic resist layer; 240～blue photic resist layer; 250～existing colored filter with different-thickness.
The present invention's part (Fig. 3 A～3C, Fig. 4, Fig. 5, Fig. 6, Fig. 7)
300～substrate; 301～transmission area; 302～echo area; The photic resist layer of 310～thick colour; 320～thin colored photic resist layer; 330～transparent flatness layer; 410,510～photomask; 420,520～the first patterns; 430,530～the second patterns; 1050,1070～gap (slit); 1060,1080～little pattern; 600,700～following substrate; 610,710～insulation course; 620,720～bottom electrode; 622,722～echo area; 624,724～transmission area; 630,755～liquid crystal layer; 640,750～top electrode; 645,740～flatness layer; 650,730～colored filter; 651,731～thick district; 652,732～thin district; 660,760～upward substrate; 670,770～surround lighting (being reflected light); 680,780～(being transmitted light) backlight; 690,790～semi-transmission-type LCD device.
Embodiment
See also Fig. 3 A～3C, in order to the technology of the colored filter with different-thickness among the semi-transmission-type LCD of the present invention to be described, wherein, employed other element of LCD disclosed in this invention is with existing identical, and no longer this gives unnecessary details.What will specify here is that in order to show feature of the present invention simply, Fig. 3 A～3C is the color filter technology sectional view that shows corresponding arbitrary pixel (pixel).And, can be formed with black matrix" (blackmatrix) pattern between each pixel, but omit its diagram at this.
At first, see also Fig. 3 A, a substrate 300 is provided, this substrate 300 has one first district 301 and one second district 302.Wherein, this substrate 300 for example is a glass substrate.Also have the transmission area (transmissive region) of first district, 301 corresponding semi-transmission-type LCD devices, and the echo area (reflective region) of second district, 302 corresponding semi-transmission-type LCD devices.
Secondly, still see also Fig. 3 A, be coated with a thick colored photoresist (color resist) layer 310 in substrate 300.Wherein the color of the photic resist layer 310 of this thick colour for example is red, green or blue.
Secondly, see also Fig. 3 B, remove the photic resist layer 310 of thick colour of part position in second district 302, and form a thin colored photic resist layer 320 in the substrate 300 of position in second district 302.At this, for the method for 2 example explanation formation Fig. 3 B, but and non-limiting the present invention.
The 1st example
When the photic resist layer 310 of thick colour is made up of positive light anti-etching agent (positive photoresist), then remove the method for the thick colour photic resist layer 310 of part position in second district 302, as following step.
See also Fig. 4, utilize an exposure source (exposure light, not shown) with the photo-mask process (photolithography procedure) of a photomask (reticle or photomask) 410, the photic resist layer 310 of thick colour is carried out photoetching and removes the photic resist layer 310 of the thick colour of part position in second district 302, use and form thin colored photic resist layer 320 in this substrate 300 in this second district 302.Wherein, this photomask 410 comprises: one first pattern 420 (being complete light-shielding pattern) in corresponding first district 301, and one second pattern 430 (being part printing opacity pattern) in corresponding second district 302.Wherein first pattern 420 exposes to the photic resist layer 310 of thick colour in first district 301 in order to cover this first district 301 to avoid exposure source.Second pattern 430 penetrates the exposure intensity in this second district 302 in order to reduction, that is second pattern 430 of this photomask 410 can make exposure resolution ratio reduce, and the minimum resolution that makes is reduced to about 1/2.
Because second pattern 430 need have the effect that reduces exposure intensity, can utilize half case of changing the line map (half-tone pattern) to be reached.Lift an example, this second pattern 430 can be made of a plurality of little pattern 1060 that separates with appropriate gap (slit) 1050, little pattern 1060 can be printing opacity pattern or light tight pattern, but when little pattern 1060 is the printing opacity pattern, just be necessary for non-printing opacity in order to the gap 1050 of separating each little pattern 1060 among the figure.Otherwise when little pattern 1060 was non-printing opacity pattern, gap 1050 just was necessary for printing opacity, as shown in Figure 4.Size by above-mentioned little pattern 1060 of control and/or gap 1050, light is partly hindered and can't see through fully, just can when carrying out lithography step, reduce penetrating light intensity and make the photic resist layer 310 of thick colour can not be developed fully, that is still residual after having developed the photic resist layer of certain thickness colour (promptly thin colored photic resist layer 320) be arranged.Limit especially as for the shaped design of little pattern 1060, can be Any shape, for example: rectangle, circle, square, rectangle, rhombus or triangle or the like, or these little pattern 1060 integral body are a strip.In addition, the thickness of thin colored photic resist layer 320 then can be adjusted by the size in above-mentioned little pattern 1060 of control and/or gap 1050.
The 2nd example
When the photic resist layer 310 of thick colour is made up of negative type photoresist (negative photoresist), then remove the method for the thick colour photic resist layer 310 of part position in second district 302, as following step.
See also Fig. 5, utilize a photo-mask process of an exposure source (not shown) and a photomask 510, the photic resist layer 310 of thick colour is carried out photoetching and removes the photic resist layer 310 of the thick colour of part position in second district 302, thereby form thin colored photic resist layer 320 in this substrate 300 in this second district 302 of position.Wherein, this photomask 510 comprises: one first pattern 520 (being the printing opacity pattern) in corresponding first district 301, and one second pattern 530 (being part printing opacity pattern) in corresponding second district 302.Wherein first pattern, 520 usefulness so that the photic resist layer 310 of the thick colour in this first district 301 expose fully.Second pattern 530 penetrates the exposure intensity in this second district 302 in order to reduction, that is second pattern 530 of this photomask 510 can make exposure resolution ratio reduce, and the minimum resolution that makes is reduced to about 1/2.
Because second pattern 530 need have the effect that reduces exposure intensity, can utilize half case of changing the line map (half-tone pattern) to be reached.Lift an example, this second pattern 530 can be made of a plurality of little pattern 1080 that separates with appropriate gap (slit) 1070, little pattern 1080 can be printing opacity pattern or light tight pattern, but when little pattern 1080 is the printing opacity pattern, just be necessary for non-printing opacity in order to the gap 1070 of separating each little pattern 1080 among the figure, as shown in Figure 5.Otherwise when little pattern 1080 was non-printing opacity pattern, gap 1070 just was necessary for printing opacity.Size by above-mentioned little pattern 1080 of control and/or gap 1070, light is partly hindered and can't see through fully, just can when carrying out lithography step, reduce penetrating light intensity and make the photic resist layer 310 of thick colour can not be developed fully, that is still residual after having developed the photic resist layer of certain thickness colour (promptly thin colored photic resist layer 320) be arranged.Limit especially as for the shaped design of little pattern 1080, can be Any shape, for example: rectangle, circle, square, rectangle, rhombus or triangle or the like, or these little pattern 1080 integral body are a strip.In addition, the thickness of thin colored photic resist layer 320 then can be adjusted by the size in above-mentioned little pattern 1080 of control and/or gap 1070.
Here be noted that photic resist layer 310 employed positive light anti-etching agent or the negative type photoresist of above-mentioned thick colour in addition, both all belong to photoresist or macromolecular material.Positive light anti-etching agent is that photoresist itself is insoluble in developer, but after exposure, can be dissociated into a kind of structure that is dissolved in developer solution; To be photoresist can produce link to negative type photoresist after exposure, makes the photoresist structure after the exposure be insoluble to developer.So long as all being applicable in the technology of the present invention, general commercially available colour " positive light anti-etching agent " or " negative type photoresist " can reach effect of the present invention.
Afterwards, see also Fig. 3 C, in the future to carry out subsequent technique in order to be beneficial to, can and should form a flatness layer (transparent planarization layer, or title overcoat) 330 with high-transmission rate (or title high grade of transparency) on the thin colored photic resist layer 320 in the photic resist layer 310 of this thick colour.Wherein, this flatness layer 330 is made up of organic insulation or inorganic insulating material, and organic insulation for example is benzocyclobutene (BCB), acryl resin (acryl resin) or the like, and inorganic insulating material for example is SiO
2, SiN
xOr the like.So, promptly finished the colored filter with different-thickness of the present invention.
What will remind especially here is, the present invention only uses one lithography step and a photomask (410/510) to form the colored filter with different-thickness, therefore can reduce manufacturing cost.Moreover, because colored filter of the present invention is to be formed in the smooth substrate 300, thereby can easily control the thickness of colored filter.
Come again, see also Fig. 6,, be applied to the structural representation of half transmission type LCD device in order to the colored filter with different-thickness of the present invention to be described.At this in order not obscure feature of the present invention, so the technology of semi-transmission-type LCD device will not be described in detail in detail.
A kind of semi-transmission-type LCD device 690 with colored filter of different-thickness comprises following composition:
Substrate once 600 has an insulation course 610 on it, and this time substrate 600 can include thin film transistor (TFT) array (not shown).
One bottom electrode (or claims reflecting electrode, reflective electrode) 620, be positioned on this insulation course 610, this bottom electrode 620 has echo area 622 and transmission area 624, wherein this echo area 622 for example is an aluminium lamination, and this transmission area 624 for example is indium tin oxide (ITO) layer or indium-zinc oxide (IZO) layer.
One flatness layer (or claim overlayer, overcoat) 645, be positioned on this colored filter 650 and correspond to substrate 660 on this, this flatness layer 645 is formed by the material of a high-transmission rate, and its material for example is SiO
2, SiN
xOr the like.
One top electrode (or claim public electrode, common electrode) 640 is positioned on this transparent flatness layer 645 and corresponds to this colored filter 650, and this top electrode 640 for example is ITO or IZO layer.
One liquid crystal layer 630 is sandwiched on this between the substrate 660 and this time substrate 600.
Therefore, above-mentioned semi-transmission-type LCD device 690 is when reflective-mode (reflective mode), because the number of times that surround lighting (ambient light, i.e. reflected light) 670 sees through second caliper zones 652 of colored filter 650 is twice.And when transmission mode (transmissive mode), the number of times that (backlight, i.e. transmitted light) backlight 680 sees through first caliper zones 651 of colored filter 650 is once.Because the thickness of first caliper zones, 651 to the second caliper zones 652 is thick, so that the Show Color under reflective-mode and transmission mode is close, that is the existing color density (color saturation of solution, color purity) problem that differs greatly, and can promote display quality (display-quality).
See also Fig. 7 again,, be applied to the structural representation of the semi-transmission-type LCD device of another type in order to the colored filter with different-thickness of the present invention to be described.Semi-transmission-type LCD device shown in Figure 7 adopts the technology of COA (array enamel optical filter, color filter on array), and it can promote the Aligning degree of upper and lower base plate.At this in order not obscure feature of the present invention, so the technology of above-mentioned semi-transmission-type LCD device will not be described in detail in detail.
A kind of semi-transmission-type LCD device 790 with colored filter of different-thickness comprises following composition:
Substrate once 700 has an insulation course 710 on it, and this time substrate 700 can include thin film transistor (TFT) array (not shown).
One bottom electrode (or claims reflecting electrode, reflective electrode) 720, be positioned on this insulation course 710, this bottom electrode 720 has echo area 722 and transmission area 724, wherein this echo area 722 for example is an aluminium lamination, and this transmission area 724 for example is indium tin oxide (ITO) layer or indium-zinc oxide (IZO) layer.
The colored filter 730 with different-thickness via the inventive method manufacturing is formed on this bottom electrode 720.Wherein this colored filter 730 has first caliper zones 731 and second caliper zones 732, and wherein, this first caliper zones 731 is the thicker zone of thickness and to should transmission area 724, and second caliper zones 732 be the regional of thinner thickness and to should echo area 722.
One flatness layer (or claim overlayer, and overcoat) 740, be positioned on this colored filter 730, this flatness layer 740 is formed by the material of a high-transmission rate, and its material for example is SiO2, SiNx or the like.
Substrate 760 on one, and it corresponds to this time substrate 700.
One top electrode (or claim public electrode, common electrode) 750 is positioned on this in substrate 760, and this top electrode 750 for example is ITO or IZO layer.
One liquid crystal layer 755 is sandwiched on this between the substrate 760 and this time substrate 700.
Therefore, above-mentioned semi-transmission-type LCD device 790 is when reflective-mode, because the number of times that surround lighting (being reflected light) 770 sees through second caliper zones 732 of colored filter 730 is twice.And when transmission mode, the number of times that (being transmitted light) backlight 780 sees through first caliper zones 731 of colored filter 730 is once.Because the thickness of first caliper zones, 731 to the second caliper zones 732 is thick, institute is so that the Show Color under reflective-mode and transmission mode is close, that is solution has the problem that color density (color saturation) differs greatly now, and can promote display quality.
Below only lift a colored filter that utilizes a photomask with the case of partly changing the line map to form semi-transmission-type LCD device and be example with different-thickness, but this colored filter with different-thickness also can utilize a photomask with different transmissivities to be reached, for example in a photomask, have a transmission area and half transmission area simultaneously, make the depth of exposure difference of photoresist, and make photoresist form different zones.
Feature of the present invention and advantage
The invention is characterized in: utilize resolution different on the photomask or transmissivity, the colored filter of corresponding echo area is partly removed, and form a colored filter with different-thickness, and this colored filter is applied to semi-transmission-type LCD device.
So,, make colored filter to form, not only can promote the display quality of semi-transmission-type LCD device, also can reach the purpose that reduces cost with one photomask with different-thickness via the present invention.Moreover, compare with existing method, because colored filter of the present invention is to be formed in the smooth substrate, so can more easily control the thickness in colored filter Zhong Ge district, thereby can solve the problem that existing color density (color saturation, color purity) differs.
Though the present invention with preferred embodiment openly as above; but it is not in order to limit scope of the present invention; those skilled in the art are under the situation that does not break away from the spirit and scope of the present invention; should do a little change and retouching, so protection scope of the present invention should be as the criterion so that claims are determined.
Claims (15)
1. the transflective liquid crystal display device with different-thickness colored filter has a transmission area and an echo area, and this transflective liquid crystal display device comprises:
One second substrate of one first substrate and a subtend;
One colored filter is positioned in this first substrate, wherein this colored filter that should transmission area is had one first thickness, and this colored filter that should the echo area is had one second thickness, and this first thickness is greater than this second thickness; And
One liquid crystal layer is sandwiched between this second substrate and this colored filter.
2. the transflective liquid crystal display device with different-thickness colored filter as claimed in claim 1, wherein this first substrate comprises a thin film transistor (TFT) array.
3. the transflective liquid crystal display device with different-thickness colored filter as claimed in claim 1, wherein this second substrate comprises a thin film transistor (TFT) array.
4. the transflective liquid crystal display device with different-thickness colored filter as claimed in claim 1 comprises that also a flatness layer is located between this colored filter and this liquid crystal layer.
5. transflective liquid crystal display device with different-thickness colored filter comprises:
Substrate once has an insulation course on it;
One bottom electrode is formed on this insulation course, and this bottom electrode has an echo area and a transmission area;
Substrate on one, subtend is in this time substrate;
One colored filter, be arranged at a surface of substrate on this, wherein this colored filter has one first caliper zones and one second caliper zones, and wherein the thickness of this first caliper zones is greater than this second caliper zones, and this first caliper zones is to should transmission area, and second caliper zones is to should the echo area;
One top electrode, be formed on this colored filter and subtend in this time substrate; And
One liquid crystal layer is sandwiched on this between the substrate and this time substrate.
6. the transflective liquid crystal display device with different-thickness colored filter as claimed in claim 5 comprises that also a flatness layer is arranged between this colored filter and this liquid crystal layer.
7. transflective liquid crystal display device with different-thickness colored filter comprises:
Substrate once has an insulation course on it;
One bottom electrode is formed on this insulation course, and this bottom electrode has an echo area and a transmission area;
One colored filter, be formed on this bottom electrode, wherein this colored filter has one first caliper zones and one second caliper zones, and wherein the thickness of this first caliper zones is greater than this second caliper zones, and this first caliper zones is to should transmission area, and second caliper zones is to should the echo area;
Substrate on one, subtend is in this time substrate;
One top electrode be formed on this in substrate, and subtend is in this infrabasal plate; And
One liquid crystal layer is sandwiched between this top electrode and this colored filter.
8. the transflective liquid crystal display device with different-thickness colored filter as claimed in claim 7 comprises that also a flatness layer is arranged between this colored filter and this liquid crystal layer.
9. one kind has the different-thickness manufacturing method of color filters, comprises the following steps:
(a) be that this substrate has one first district and one second district for a substrate;
(b) form the photic resist layer of a thick colour in this substrate; And
(c) utilize a photo-mask process of a photomask, in order to the photic resist layer of this thick colour is carried out photoetching and removes this thick colour photic resist layer of part position in this second district, thereby form a thin colored photic resist layer in this substrate in this second district of position.
10. as claimed in claim 9 have a different-thickness manufacturing method of color filters, and wherein the pattern corresponding to this second district is half case of changing the line map on this photomask.
11. as claimed in claim 9 have a different-thickness manufacturing method of color filters, wherein the pattern corresponding to this second district comprises a plurality of little patterns on this photomask.
12. as claimed in claim 9 have a different-thickness manufacturing method of color filters, the transmission area of corresponding half transmissive type liquid crystal display in this first district wherein, and this second district is to echo area that should the semi-transmission-type LCD.
13. as claimed in claim 9 have a different-thickness manufacturing method of color filters, wherein the photic resist layer of this thick colour is a positive light anti-etching agent, and this photomask comprises to a complete light-shielding pattern that should first district and to a part of printing opacity pattern that should second district.
14. as claimed in claim 9 have a different-thickness manufacturing method of color filters, wherein the photic resist layer of this thick colour is a negative type photoresist, and this photomask comprises to a complete printing opacity pattern that should first district and to a part of printing opacity pattern that should second district.
15. as claimed in claim 9 have a different-thickness manufacturing method of color filters, also comprise form a flatness layer be covered in the photic resist layer of this thick colour with should thin colored photic resist layer on.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410001489 CN1523436B (en) | 2003-08-08 | 2004-01-09 | Semi-transmissive liquid crystal display device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN03127732 | 2003-08-08 | ||
| CN03127732.2 | 2003-08-08 | ||
| CN 200410001489 CN1523436B (en) | 2003-08-08 | 2004-01-09 | Semi-transmissive liquid crystal display device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610163128 Division CN1967337A (en) | 2003-08-08 | 2004-01-09 | Color light filter and manufacturing method of semi-transmission-type LCD device |
Publications (2)
| Publication Number | Publication Date |
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| CN1523436A true CN1523436A (en) | 2004-08-25 |
| CN1523436B CN1523436B (en) | 2010-04-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410001489 Expired - Lifetime CN1523436B (en) | 2003-08-08 | 2004-01-09 | Semi-transmissive liquid crystal display device |
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| Country | Link |
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| CN (1) | CN1523436B (en) |
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| CN100383632C (en) * | 2004-12-29 | 2008-04-23 | 鸿富锦精密工业（深圳）有限公司 | Display faceplate and LCD device |
| CN100430786C (en) * | 2004-12-09 | 2008-11-05 | 友达光电股份有限公司 | Display and method for improving display quality |
| CN100517006C (en) * | 2004-12-16 | 2009-07-22 | 鸿富锦精密工业（深圳）有限公司 | Semi-transmissive semi-reflective liquid crystal display device |
| US7639325B2 (en) | 2004-12-10 | 2009-12-29 | Hon Hai Precision Industry Co., Ltd. | Transflective display device |
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| CN103226259A (en) * | 2013-04-09 | 2013-07-31 | 北京京东方光电科技有限公司 | Liquid crystal display panel, display device, and manufacturing method of liquid crystal display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100667537B1 (en) * | 2000-07-03 | 2007-01-10 | 엘지.필립스 엘시디 주식회사 | Color filter of LCD and fabrication method thereof |
| JP2003186046A (en) * | 2001-12-18 | 2003-07-03 | Toshiba Corp | Liquid crystal display device |
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| CN103226259A (en) * | 2013-04-09 | 2013-07-31 | 北京京东方光电科技有限公司 | Liquid crystal display panel, display device, and manufacturing method of liquid crystal display panel |
| WO2014166152A1 (en) * | 2013-04-09 | 2014-10-16 | 北京京东方光电科技有限公司 | Liquid crystal display panel, display device and method for manufacturing liquid crystal display panel |
| CN103226259B (en) * | 2013-04-09 | 2015-07-01 | 北京京东方光电科技有限公司 | Liquid crystal display panel, display device, and manufacturing method of liquid crystal display panel |
| US9703141B2 (en) | 2013-04-09 | 2017-07-11 | Beijing Boe Optoelectronics Technology Co., Ltd. | Liquid crystal display panel, display device, and manufacturing method of liquid crystal display panel |
| CN107463023A (en) * | 2017-09-18 | 2017-12-12 | 惠科股份有限公司 | Liquid crystal display panel and liquid crystal display |
| CN107505761A (en) * | 2017-09-18 | 2017-12-22 | 惠科股份有限公司 | The preparation method of chromatic filter and liquid crystal display panel |
| CN110109289A (en) * | 2019-05-06 | 2019-08-09 | 深圳市华星光电技术有限公司 | Transflective liquid crystal display panel and semitransparent semi-reflective liquid crystal display device |
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