CN1249496C

CN1249496C - Reflective liquid crystal display device

Info

Publication number: CN1249496C
Application number: CNB2003101154719A
Authority: CN
Inventors: 文钟源; 金文哲
Original assignee: LG Philips LCD Co Ltd
Current assignee: LG Display Co Ltd
Priority date: 2002-12-27
Filing date: 2003-11-26
Publication date: 2006-04-05
Anticipated expiration: 2023-11-26
Also published as: KR100460085B1; CN1512226A; US7030947B2; JP2004212945A; KR20040058847A; US20040125286A1; JP3770610B2

Abstract

A reflective liquid crystal display device includes first and second substrates spaced apart and facing each other, a gate line and a data line on an inner surface of the first substrate and crossing each other to define a pixel area, a thin film transistor electrically connected to the gate and data lines, a passivation layer covering the thin film transistor, a blocking layer on the passivation layer and corresponding to the thin film transistor, a pixel electrode on the passivation layer and connected to the thin film transistor, a retardation film on an outer surface of the first substrate, a polarizer on the retardation film, an absorption layer on an inner surface of the second substrate, a cholesteric liquid crystal color filter layer on the absorption layer, a common electrode on the cholesteric liquid crystal color filter layer, and a liquid crystal layer between the common electrode and the pixel electrode, wherein the data line overlaps adjacent pixel electrodes and a overlapping width is over 50% of a width of the data line.

Description

Reflective type liquid crystal display device

Technical field

The present invention relates to LCD (LCD) device, particularly have the reflective type liquid crystal display device of cholesterol color-filter layer.

Background technology

LCD (LCD) device has become the focus of the display device of future generation with high added value, and this is because its low-power consumption and good portability.

Active matrix liquid crystal display (AMLCD) device comprises as being used for the thin film transistor (TFT) of the switching device of a plurality of pixels, and because its high resolving power and rapid movement image and be used widely.

Because the LCD device is not luminous, so its light source that need add, so that display image.Usually, the LCD device has back lighting device in the LCD panel back as light source, and this LCD is commonly called transmission-type LCD device.In this transmission-type device,, and control the amount of transmitted light according to the arrangement of liquid crystal molecule from the light transmission liquid crystal board of back lighting device incident.Because transmission-type LCD device adopts back lighting device as light source, so it can show bright image in dark situation.Yet for the amount from the light of back lighting device incident, the amount of transmitted light is very little.That is, see through liquid crystal board owing to have only, therefore in order to improve the brightness of LCD device, the brightness that should improve back lighting device from 7% of the light of back lighting device incident.Thereby transmission-type LCD device is high power consumption owing to back lighting device has.

For solving the problem in the transmission-type LCD device, people have proposed a kind of reflection type LCD device.In the reflection type LCD device, sunshine or artificial light are used as the light source of LCD device.The light of incident from the outside is according to the baffle reflection that is arranged in the LCD device of liquid crystal molecule.Owing to do not have back lighting device, so the reflection type LCD device has than the much lower power consumption of transmission-type LCD device.In addition, generally speaking, the same absorptive filters layer that comprises of reflection type LCD device with transmission-type LCD device, this color-filter layer is made of pigment or dyestuff.The reflection type LCD device also has the defective of low-transmittance owing to this absorptive filters layer.

In order to improve the transmittance in the reflection type LCD device, developed and developed a kind of cholesteryl liquid crystal (CLC) color filter.Because the CLC color filter optionally reflects and transmitted light, so the CLC color filter can be launched the light of high pure color.In addition, the CLC color filter is used as color-filter layer and reverberator simultaneously.Therefore, do not need the reverberator that adds, thereby reduced manufacturing process and improved picture quality owing to comprise the reflection type LCD device of CLC color filter.

The Liquid Crystal Molecules Alignment of CLC becomes helical structure.This helical structure is characterised in that the hand of spiral and pitch, and wherein pitch is the cycle of helical structure.Tone by the light of CLC reflection depends on this pitch.In other words, catoptrical mean wavelength is that the average reflectance of CLC multiply by pitch, and by following formulate.

λ=n (avg) pitch

Wherein n (avg) is the average reflectance of CLC.

For example, if CLC has about 1.5 average reflectance, the pitch of CLC is about 430nm, and then the light that is reflected by CLC has the mean wavelength of about 650nm, and is red.Can reflection green or blue light by the pitch that changes CLC.

Introduce reflection type LCD device with reference to the accompanying drawings in detail with CLC color filter.

Fig. 1 is the planimetric map according to the reflection type LCD device that comprises cholesteryl liquid crystal (CLC) color filter of prior art.As shown in Figure 1, the data line 32 of the select lines 22 of horizontal direction and vertical direction crosses one another to limit pixel region in the figure.Crossover sites at select lines 22 and data line 32 forms thin film transistor (TFT) to be used as on-off element, and it comprises grid 24, source electrode 34 and drains 36.Grid 24 is connected to select lines 22; Source electrode 34 is connected to data line 32; Drain electrode 36 separates with source electrode 34.This thin film transistor (TFT) also comprises active layer 28, and becomes the raceway groove of thin film transistor (TFT) at source electrode 34 and this active layer 28 between 36 of draining.Passivation layer 40 is formed on the thin film transistor (TFT).

Electrode for capacitors 37 overlaps with select lines 22, so that form holding capacitor.Electrode for capacitors 37 can be by forming with data line 32 identical materials.

In pixel region, form pixel electrode 42.Pixel electrode 42 is connected to drain electrode 36 by the drain contact hole 40a that passes passivation layer 40, and is connected to electrode for capacitors 37 by the capacitor contact hole 40b that passes passivation layer 40.Pixel electrode 42 overlaps with data line 32.

For preventing leak light in the zone except pixel region, corresponding to the edge formation black matrix (black matrix) 38 of pixel electrode 42.Black matrix 38 also covers the raceway groove of a part of select lines 22, data line 32 and thin film transistor (TFT).

Although not shown, formed the CLC color-filter layer, and this CLC color-filter layer is according to pixels distinguished the light of reflection corresponding to the wavelength of one of red, green and blue look.

Fig. 2 A and 2B are respectively the cut-open views along the line IIA-IIA of Fig. 1 and line IIB-IIB intercepting.

In Fig. 2 A and 2B, first substrate 10 and second substrate 50 separate and face one another.First substrate 10 can be made of transparency carrier.Grid 24 is formed on the inside surface of first substrate 10, gate insulator 26 cover gate 24.Active layer 28 is formed on the gate insulator 26 of grid 24 tops, and source electrode 34 and drain electrode 36 are formed on the active layer 28.As mentioned above, grid 24, active layer 28, source electrode 34 and drain and 36 form thin film transistor (TFT)s, and be exposed to source electrode 34 and the active layer 28 between 36 of draining becomes the raceway groove of thin film transistor (TFT).In addition, on gate insulator 26, form by the data line 32 that constitutes with source electrode 34 and drain electrode 36 identical materials.

Black matrix 38 is formed on data line 32, source electrode 34 and drains on 36, and the raceway groove of cover data line 32 and thin film transistor (TFT).Black matrix 38 can be made of black resin.Black matrix 38 stops that light leaks in the marginal portion of pixel region (that is, in data line 32 zone nearby), and prevents that light from arriving the raceway groove of thin film transistor (TFT).

Form passivation layer 40 on black matrix 38, this passivation layer 40 is made of the organic material with low relative dielectric constant.This passivation layer 40 comprises the drain contact hole 40a that exposes drain electrode 36.

Pixel electrode 42 is formed on the passivation layer 40, and pixel electrode 42 is connected to drain electrode 36 by drain contact hole 40a.Pixel electrode 42 can overlap to improve the aperture ratio of LCD device with data line 32.

On the other hand, absorption layer 52 is formed on the inside surface of second substrate 50, and forms the CLC color-filter layer that comprises sub-color filter 54a and 54b on absorption layer 52.Sub-color filter 54a of each of CLC color-filter layer and 54b are corresponding to a pixel region and the reflection light corresponding to the wavelength of one of red, green and blue look.Public electrode 56 is formed on CLC color-filter layer 54a and the 54b.Public electrode 56 is made of transparent conductive material.

Liquid crystal layer 60 places between public electrode 56 and the pixel electrode 42.

Phase shift films 72 and polarizer 74 are successively set on the outside surface of first substrate 10.Phase shift films 72 can be to have a quarter-wave plate (QWP) that λ/4 postpones, polarizer 74 can be only linearly transmission be parallel to the linear polarization of the polarized light of its axis of homology.

Like this, form black matrix to prevent because near light and in thin film transistor (TFT), produce photocurrent and stop that light leaks data line.Yet,, therefore may in thin film transistor (TFT), produce leakage current because the black matrix of prior art is made of the resin with relative low-resistivity and high-k.

Summary of the invention

Correspondingly, the present invention aims to provide reflective type liquid crystal display device, and it has solved basically because one or more problems that the restriction of prior art and defective produce.

Advantage of the present invention provides a kind of reflective type liquid crystal display device that prevents to produce leakage current.

Another advantage of the present invention provides a kind of reflective type liquid crystal display device of block light leakage.

Supplementary features of the present invention and advantage will be described below, and wherein partly obviously find out from explanatory note, perhaps can learn by implementing the present invention.Objects and advantages of the present invention will realize by the structure that particularly points out in explanatory note and claims and accompanying drawing.

For realizing these and other advantage and according to purpose of the present invention, as concrete and broad description, a kind of reflective type liquid crystal display device comprises:

First and second substrates that separate and face one another;

Select lines on the inside surface of first substrate and data line, they cross one another to limit pixel region;

Corresponding to the thin film transistor (TFT) of each pixel region, it is electrically connected to select lines and data line;

The transistorized passivation layer of cover film;

On passivation layer and corresponding to the restraining barrier of thin film transistor (TFT);

On passivation layer corresponding to each pixel region and be connected to the pixel electrode of thin film transistor (TFT);

Phase shift films on the outside surface of first substrate;

Polarizer on phase shift films;

Color-filter layer on the inside surface of second substrate;

Public electrode on color-filter layer; With

Liquid crystal layer between public electrode and pixel electrode,

Wherein the restraining barrier is made of metal material,

Wherein data line and adjacent pixel electrodes overlapping, and overlapping width is about more than 50% the data line width.

In another program, a kind of reflective type liquid crystal display device comprises:

First and second substrates that separate and face one another;

Be electrically connected to the thin film transistor (TFT) of select lines and data line;

The transistorized passivation layer of cover film;

First and second black matrix that overlap with the both sides of data line on passivation layer and respectively;

Pixel electrode on passivation layer, this pixel electrode are connected to thin film transistor (TFT) and overlap with first and second black matrix;

Phase shift films on the outside surface of first substrate;

Polarizer on phase shift films;

Color-filter layer on the inside surface of second substrate;

Public electrode on color-filter layer; With

Liquid crystal layer between public electrode and pixel electrode,

Wherein first and second black matrix and restraining barrier comprise opaque material.

First and second substrates that separate and face one another;

First and second black matrix on the inside surface of first substrate;

Many select liness on the inside surface of first substrate;

Intersect to limit many data lines of pixel region with select lines, the both sides of data line overlap with first and second black matrix respectively;

The transistorized passivation layer of cover film;

Phase shift films on the outside surface of first substrate;

Polarizer on phase shift films;

Color-filter layer on the inside surface of second substrate;

Public electrode on color-filter layer; With

Liquid crystal layer between public electrode and pixel electrode,

The generality explanation and the following detailed description that should be appreciated that the front all are schematic and indicative and are used to provide to further explanation of the present invention.

Description of drawings

Accompanying drawing provides further explanation of the present invention and constitutes the part of this instructions, and accompanying drawing shows embodiments of the invention and is used from explanation principle of the present invention with explanatory note one.

In the accompanying drawing:

Fig. 1 is the planimetric map according to reflection LCD (LCD) device that comprises cholesteryl liquid crystal (CLC) color filter of prior art;

Fig. 2 A and 2B are respectively the cut-open views along the line IIA-IIA of Fig. 1 and line IIB-IIB intercepting;

Fig. 3 is the planimetric map according to the reflection type LCD device that comprises the CLC color filter of first embodiment of the invention;

Fig. 4 A and 4B are respectively the cut-open views along the line IVA-IVA of Fig. 3 and line IVB-IVB intercepting;

Fig. 4 C represents along another program of the present invention of the line IVB-IVB of Fig. 3;

Fig. 5 is the planimetric map according to the reflection type LCD device that comprises the CLC color filter of second embodiment of the invention;

Fig. 6 A and 6B are respectively the cut-open views along the line VIA-VIA of Fig. 5 and line VIB-VIB intercepting;

Fig. 6 C represents along another program of the present invention of the line VIB-VIB of Fig. 5;

Fig. 7 is the planimetric map according to the reflection type LCD device that comprises the CLC color filter of third embodiment of the invention;

Fig. 8 A and 8B are respectively the cut-open views along the line VIIIA-VIIIA of Fig. 7 and line VIIIB-VIIIB intercepting;

Fig. 8 C represents along another program of the present invention of the line VIIIB-VIIIB of Fig. 7;

Fig. 9 is the planimetric map according to the reflection type LCD device that comprises the CLC color filter of fourth embodiment of the invention; With

Figure 10 A and 10B are respectively the cut-open views along the line XA-XA of Fig. 9 and line XB-XB intercepting;

Figure 10 C represents along another program of the present invention of the line XB-XB of Fig. 9.

Embodiment

The example that shows with reference to the accompanying drawings describes illustrated embodiment of the present invention in detail.

Fig. 3 is the planimetric map according to reflection LCD (LCD) device that comprises cholesteryl liquid crystal (CLC) color filter of first embodiment of the invention.As shown in Figure 3, the data line 132 of the select lines 122 of horizontal direction and vertical direction crosses one another to limit pixel region in the drawings.Crossover sites at select lines 122 and data line 132 forms grid 124, source electrode 134 and drains 136.Grid 124 is connected to select lines 122; Source electrode 134 is connected to data line 132; Drain electrode 136 separates with source electrode 134.Grid 124,

source electrode

134 and 136 formation that drain are used as the thin film transistor (TFT) of on-off element.This thin film transistor (TFT) also comprises active layer 128, and becomes the raceway groove of this thin film transistor (TFT) at source electrode 134 and the active layer 128 between 136 of draining.Passivation layer 140 is formed on the top of this thin film transistor (TFT).

And raceway groove restraining barrier 144 is formed on the crossover sites and the transistorized raceway groove of cover film of select lines 122 and data line 132.

Electrode for capacitors 138 overlaps to form holding capacitor with select lines 122.Electrode for capacitors 138 can be by constituting with data line 132 identical materials.

In pixel region, form pixel electrode 142.Pixel electrode 142 and drain electrode 136 overlap, and pass passivation layer 140 formation drain contact hole 140a at the overlapping portion of pixel electrode 142 and drain electrode 136.Pixel electrode 142 is connected to drain electrode 136 and is connected to electrode for capacitors 138 by the capacitor contact hole 140b that passes passivation layer 140 by drain contact hole 140a.Pixel electrode 142 also overlaps with data line 132.Like this, pixel electrode 142 becomes bigger, and data line 132 is used as black matrix, so that the aperture of LCD device is than increasing.

Fig. 4 A and 4B are respectively the cut-open views along the line IVA-IVA of Fig. 3 and IVB-IVB intercepting.

As shown in the figure, first substrate 110 and second substrate 150 are spaced-apart and face.First substrate 110 can be made of transparency carrier, and second substrate 150 can be made of transparency carrier or opaque substrate.Grid 124 is formed on the inside surface of first substrate 110, gate insulator 126 cover gate 124.Although not shown, the select lines 122 that is connected to Fig. 2 of grid 124 also is formed on the inside surface of first substrate 110.Active layer 128 is formed on the gate insulator 126 on the grid 124, and source electrode 134 and drain electrode 136 are formed on the active layer 128.As mentioned above, grid 124, active layer 128, source electrode 134 and drain and 136 form thin film transistor (TFT)s are exposed to source electrode 134 and the active layer 128 between 136 of draining becomes the raceway groove of thin film transistor (TFT).In addition, form data line 132 and the electrode for capacitors 138 of Fig. 3 on gate insulator 126, they can be by constituting with source electrode 134 and drain electrode 136 identical materials.Data line 132 is connected to source electrode 134, and intersects to limit pixel region with select lines.Electrode for capacitors and select lines overlap.Here, data line 132 has the above width of about 8 μ m.Although not shown, between active layer 128 and source electrode 134 and active layer 128 and drain and can form ohmic contact layer between 136, so that reduce contact resistance.

Passivation layer 140 is formed on data line 132, source electrode 134 and drains on 136.Passivation layer 140 can be by the organic material with low relative dielectric constant such as benzocyclobutene (BCB) or acryl resin formation.Passivation layer 140 comprises the capacitor contact hole 140b of Fig. 3 of the electrode for capacitors 138 that exposes drain electrode 136 drain contact hole 140a and expose Fig. 3.

Next, on passivation layer 140, form restraining barrier 144, so that the transistorized raceway groove of cover film.Restraining barrier 144 can be made of opaque metal material such as chromium (Cr).Restraining barrier 144 stops that light incides raceway groove, therefore prevents to produce leakage current.

Shown in Fig. 4 B, can be formed at least a portion restraining barrier 144 by the pixel electrode 142 that transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) constitute and passivation layer 140 on.Pixel electrode 142 is connected to drain electrode 136 and is connected to electrode for capacitors by the capacitor contact hole by drain contact hole 140a.Pixel electrode 142 can overlap to improve the aperture ratio of LCD device with data line 132.As shown in the figure, pixel electrode 142 can contact with restraining barrier 144 and overlap, so that the part on restraining barrier 144 is between passivation layer 140 and the pixel electrode 142.

In another program of the present invention, restraining barrier 144 can overlap with pixel electrode 142, so that one part of pixel electrode 142 is between restraining barrier 144 and the passivation layer 140, shown in Fig. 4 C.

On the other hand, absorption layer 152 is formed on the inside surface of second substrate 150, and comprises that the CLC color-filter layer of

sub-color filter

154a and 154b is formed on the absorption layer 152.Sub-color filter 154a of each of CLC color-filter layer and 154b are corresponding to a pixel region and the reflection light corresponding to the wavelength of one of red, green and blue look.Public electrode 156 is formed on CLC color-filter layer 154a and the 154b.Public electrode 156 is by transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) formation.

Liquid crystal layer 160 places between public electrode 156 and the pixel electrode 142.

Phase shift films 172 and polarizer 174 are successively set on the outside surface of first substrate 110.Phase shift films 172 can be to have the quarter-wave plate (QWP) that λ/4 postpone, and polarizer 174 can be the linear polarization that a transmission is parallel to the linearly polarized photon of its axis of homology.

In the first embodiment of the present invention, form restraining barrier 144, and the width of data line 132 is wideer than the prior art corresponding to the raceway groove of thin film transistor (TFT).Like this, compared with prior art, data line 132 and pixel electrode 142 overlap widelyer.That is, the about of the width of data line 132 overlaps with pixel electrode 142 more than 50%.For example, if data line has the above width of 8 μ m, then data line 132 overlaps more than the 2 μ m with each adjacent pixel electrodes 142 respectively, because the minimum widith of the fine pattern that can form is about 4 μ m at present, and the distance between the adjacent pixel electrodes 142 is about 4 μ m.Therefore, because data line 132 is used as black matrix and is blocked in data line 132 leak light on every side, can omit black matrix.In addition, can be owing to restraining barrier 144 prevents to produce leakage current in thin film transistor (TFT).

In first embodiment, restraining barrier 144 is formed between passivation layer 140 and the pixel electrode 142, and restraining barrier 144 can be formed on the pixel electrode 142.

Fig. 5 is the planimetric map according to reflection LCD (LCD) device that comprises cholesteryl liquid crystal (CLC) color filter of second embodiment of the invention.As shown in Figure 5, the data line 232 of the select lines 222 of horizontal direction and vertical direction crosses one another to limit pixel region in the drawings.In the crossover sites of select lines 222 and data line 232, form and to comprise grid 224,

source electrode

234 and 236 the thin film transistor (TFT) of draining.Grid 224 is connected to select lines 222; Source electrode 234 is connected to data line 232; Drain electrode 236 separates with source electrode 234.This thin film transistor (TFT) also comprises active layer 228, and becomes the raceway groove of this thin film transistor (TFT) at source electrode 234 and the active layer 228 between 236 of draining.Passivation layer 240 is formed on this thin film transistor (TFT).

Electrode for capacitors 238 overlaps with select lines 222, so that form holding capacitor.This electrode for capacitors 238 can be by constituting with data line 232 identical materials.

Restraining barrier 244 is formed on the crossover sites of select lines 222 and data line 232, and the transistorized raceway groove of cover film.Then, form respectively the first black matrix 246a and the second black matrix 246b that the both sides with data line 232 overlap.

In pixel region, form pixel electrode 242.Pixel electrode 242 is connected to drain electrode 236 by the drain contact hole 240a that passes passivation layer 240, and is connected to electrode for capacitors 238 by the capacitor contact hole 240b that passes passivation layer 240.Pixel electrode 242 also overlaps with data line 232, so that the aperture of LCD device is than increasing.

Though not shown, formed the CLC color-filter layer, and the CLC color-filter layer is according to pixels distinguished the light of reflection corresponding to the wavelength of one of red, green and blue look.

Fig. 6 A and 6B are respectively the cut-open views along the line VIA-VIA of Fig. 5 and line VIB-VIB intercepting.

As shown in the figure, first substrate 210 and second substrate 250 are spaced-apart and face.First substrate 210 can be made of transparency carrier, and second substrate 250 can be made of transparency carrier or opaque substrate.Grid 224 is formed on the inside surface of first substrate 210, gate insulator 226 cover gate 224.Although not shown, can also on the inside surface of first substrate 210, form the select lines 222 of the Fig. 5 that is connected to grid 224.Active layer 228 is formed on the gate insulator 226 on the grid 224, and source electrode 234 and drain electrode 236 are formed on the active layer 228.As mentioned above, grid 224, active layer 228, source electrode 234 and drain and 236 form thin film transistor (TFT)s are exposed to source electrode 234 and the active layer 228 between 236 of draining becomes the raceway groove of thin film transistor (TFT).In addition, form data line 232 and the electrode for capacitors 238 of Fig. 5 on gate insulator 226, they can be by constituting with source electrode 234 and drain electrode 236 identical materials.Data line 232 is connected to source electrode 234, and intersects to limit pixel region with select lines.Electrode for capacitors and select lines overlap.Although not shown, between active layer 228 and source electrode 234 and active layer 228 and drain and can form ohmic contact layer between 236, so that reduce contact resistance.

Passivation layer 240 is formed on data line 232, source electrode 234 and drains on 236.Passivation layer 240 can be by the organic material with low relative dielectric constant such as benzocyclobutene (BCB) or acryl resin formation.Passivation layer 240 comprises the capacitor contact hole 240b of Fig. 5 of the electrode for capacitors 238 that exposes drain electrode 236 drain contact hole 240a and expose Fig. 5.

Next, on passivation layer 240, form restraining barrier 244, the first black matrix 246a and the second black matrix 246b.The transistorized raceway groove of restraining barrier 244 cover films.The first and second

black matrix

246a and 246b extend and overlap with the both sides of data line 232 respectively in the vertical direction of figure.Restraining barrier 244, the first black matrix 246a and the second black matrix 246b can be made of opaque metal material such as chromium (Cr).

Shown in Fig. 6 B, 244, the first black matrix 246a, the second black matrix 246b and can form pixel electrode 242 on passivation layer 240 at least a portion restraining barrier, this pixel electrode 242 can be made of transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO).Pixel electrode 242 is connected to drain electrode 236 by drain contact hole 240a, and cover data line 232 not only, and covers first and second black matrix 246a and the 246b, so that improve the aperture ratio of LCD device.As shown in the figure, pixel electrode 242 restraining barrier 244 that can contact and overlap is so that a part of restraining barrier 244 is between passivation layer 240 and the pixel electrode 242.

In another program of the present invention, restraining barrier 244 can cover pixel electrode 242, so that one part of pixel electrode 242 is between restraining barrier 244 and the passivation layer 240, shown in Fig. 6 C.

On the other hand, absorption layer 252 is formed on the inside surface of second substrate 250, and comprises that the CLC color-filter layer of

sub-color filter

254a and 254b is formed on the absorption layer 252.Sub-color filter 254a of each of CLC color-filter layer and 254b are corresponding to a pixel region and the reflection light corresponding to the wavelength of one of red, green and blue look.Public electrode 256 is formed on CLC color-filter layer 254a and the 254b.Public electrode 256 is by transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) formation.

Liquid crystal layer 260 places between public electrode 256 and the pixel electrode 242.

Phase shift films 272 and polarizer 274 are successively set on the outside surface of first substrate 210.Phase shift films 272 can be to have the quarter-wave plate (QWP) that λ/4 postpone, and polarizer 274 can be the linear polarization that a transmission is parallel to the linearly polarized photon of its axis of homology.

In the second embodiment of the present invention, form restraining barrier 244, and every side of the first and second

black matrix

246a and 246b and data line 232 overlaps all corresponding to the raceway groove of thin film transistor (TFT).Therefore, can prevent from thin film transistor (TFT), to produce leakage current, and the light that can be blocked in around the data line 232 leaks.Here, data line 232 can have width same as the prior art, that is, and and the width of about 8 μ m.Though in a second embodiment, restraining barrier 244 is formed between passivation layer 240 and the pixel electrode 242, and restraining barrier 244 also can be formed on the pixel electrode 242.

Simultaneously, first and second black matrix can be formed on below the data line.Introduce the third embodiment of the present invention below with reference to accompanying drawings.

Fig. 7 is the planimetric map according to reflection LCD (LCD) device that comprises cholesteryl liquid crystal (CLC) color filter of third embodiment of the invention, and Fig. 8 A and 8B are respectively the cut-open views along the line VIIIA-VIIIA of Fig. 7 and line VIIIB-VIIIB intercepting.

In Fig. 7, although the cut-open view difference, the reflection type LCD device of the 3rd embodiment has the planar structure identical with second embodiment.Like this, in institute's drawings attached, will use like numerals will to represent same or similar parts, therefore omit explanation about these parts.

Then, shown in Fig. 8 A and 8B, first substrate 310 and second substrate 350 separate and face one another.First substrate 310 can be made of transparency carrier, and second substrate 350 can be made of transparency carrier or opaque substrate.The first black matrix 316a and the second black matrix 316b are formed on the inside surface of first substrate 310, and coating 318 covers first and second black matrix 316a and the 316b.The first and second black matrix 316a and 316b can be made of the opaque metal material.Grid 324 is formed on the coating 318, gate insulator 326 cover gate 324.Although not shown, also on coating 318, form the select lines 322 of the Fig. 7 be connected to grid 324.Active layer 328 is formed on the gate insulator 326 of grid 324 tops, and source electrode 334 is formed on the active layer 328 with drain electrode 336.As mentioned above, grid 324, active layer 328, source electrode 334 and drain and 336 constitute thin film transistor (TFT)s, and be exposed to source electrode 334 and the active layer 328 between 336 of draining becomes the raceway groove of this thin film transistor (TFT).And data line 332 is formed on the gate insulator 326, and this data line 332 can be by constituting with source electrode 334 and drain electrode 336 identical materials.Data line 332 is connected to source electrode 334 and intersects to limit pixel region with select lines.The data line 332 and the first and second black matrix 316a and 316b overlap.Although not shown, can be between active layer 328 and source electrode 334 and active layer 328 and drain and form ohmic contact layer between 336, so that reduce contact resistance.

Passivation layer 340 is formed on data line 332, source electrode 334 and drains on 336.Passivation layer 340 can be by the organic material with low relative dielectric constant such as benzocyclobutene (BCB) or acryl resin formation.Passivation layer 340 comprises the drain contact hole 340a that exposes drain electrode 336.

Then, on passivation layer 340, form restraining barrier 344, and the transistorized raceway groove of cover film.Restraining barrier 344 can be made of opaque metal material such as chromium (Cr).

Shown in Fig. 8 B, forming pixel electrode 342 at least a portion restraining barrier 344 and on the passivation layer 340, this pixel electrode 342 can be by transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) formation.Pixel electrode 342 is connected to drain electrode 336 by drain contact hole 340a, and not only overlaps with data line 332, and overlaps with the first and second

black matrix

316a and 316b, so that improve the aperture ratio of LCD device.As shown in the figure, pixel electrode 342 can contact and covering barrier layer 344, so that a part of restraining barrier 344 is between passivation layer 340 and the pixel electrode 342.

In another program of the present invention, restraining barrier 344 can overlap with pixel electrode 342, so that one part of pixel electrode 342 is between restraining barrier 344 and the passivation layer 340, shown in Fig. 6 C.

On the other hand, absorption layer 352 is formed on the inside surface of second substrate 350, and comprises that the CLC color-filter layer of

sub-color filter

354a and 354b is formed on the absorption layer 352.Sub-color filter 354a of each of CLC color-filter layer and 354b are corresponding to a pixel region and the reflection light corresponding to the wavelength of one of red, green and blue look.Public electrode 356 is formed on CLC color-filter layer 354a and the 354b.Public electrode 356 is by transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) formation.

Liquid crystal layer 360 places between public electrode 356 and the pixel electrode 342.

Phase shift films 372 and polarizer 374 are successively set on the outside surface of first substrate 310.Phase shift films 372 can be to have the quarter-wave plate (QWP) that λ/4 postpone, and polarizer 374 can be the linear polarization that a transmission is parallel to the linearly polarized photon of its axis of homology.

In the third embodiment of the present invention, form restraining barrier 344, and data line 332 below, form and first and second black matrix 316a and the 316b that every side of data line 332 all overlaps corresponding to the raceway groove of thin film transistor (TFT).Therefore, can prevent from thin film transistor (TFT), to produce leakage current, and the light that can be blocked in around the data line 332 leaks.Here, data line 332 can have the width of about 8 μ m.Though in the 3rd embodiment, restraining barrier 344 is formed between passivation layer 340 and the pixel electrode 342, restraining barrier 344 also can be formed on the pixel electrode 342.

In the 3rd embodiment, can omit coating, and introduce the fourth embodiment of the present invention with reference to the accompanying drawings.

Fig. 9 is the planimetric map according to reflection LCD (LCD) device that comprises cholesteryl liquid crystal (CLC) color filter of fourth embodiment of the invention, and Figure 10 A and 10B are respectively the cut-open views along the line XA-XA of Fig. 9 and line XB-XB intercepting.

In Fig. 9, the reflection type LCD device of the 4th embodiment has the planar structure identical with the 3rd embodiment.Like this, in institute's drawings attached, will use like numerals will to represent same or similar parts, therefore omit explanation about these parts.

Then, shown in Figure 10 A and 10B, first substrate 410 and second substrate 450 separate and face one another.First substrate 410 can be made of transparency carrier, and second substrate 450 can be made of transparency carrier or opaque substrate.The first black matrix 416a and the second black matrix 416b are formed on the inside surface of first substrate 410.And, on the inside surface of first substrate 410, form grid 424 and select lines (not shown), and gate insulator 426 cover gate 424 and select liness.The first black matrix 416a and the second black matrix 416b can be by forming with grid 424 identical materials.Active layer 428 is formed on the gate insulator 426 of grid 424 tops, and source electrode 434 is formed on the active layer 428 with drain electrode 436.As mentioned above, grid 424, active layer 428, source electrode 434 and drain and 436 constitute thin film transistor (TFT)s, and be exposed to source electrode 434 and the active layer 428 between 436 of draining becomes the raceway groove of this thin film transistor (TFT).And data line 432 is formed on the gate insulator 426, and this data line 432 can be by constituting with source electrode 434 and drain electrode 436 identical materials.Data line 432 is connected to source electrode 434 and intersects to limit pixel region with select lines.The data line 432 and the first and second black matrix 416a and 416b overlap.Although not shown, can be between active layer 428 and source electrode 434 and active layer 428 and drain and form ohmic contact layer between 436, so that reduce contact resistance.

Passivation layer 440 is formed on data line 432, source electrode 434 and drains on 436.Passivation layer 440 can be by the organic material with low relative dielectric constant such as benzocyclobutene (BCB) or acryl resin formation.Passivation layer 440 comprises the drain contact hole 440a that exposes drain electrode 436.

Then, on passivation layer 440, form restraining barrier 444, and the transistorized raceway groove of cover film.Restraining barrier 444 can be made of opaque metal material such as chromium (Cr).

Shown in Figure 10 B, forming pixel electrode 442 at least a portion restraining barrier 444 and on the passivation layer 440, this pixel electrode 442 can be by transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) formation.Pixel electrode 442 is connected to drain electrode 436 by drain contact hole 440a, and cover data line 432 not only, and overlaps with the first and second

black matrix

416a and 416b, so that improve the aperture ratio of LCD device.As shown in the figure, pixel electrode 442 restraining barrier 444 that can contact and overlap makes a part of restraining barrier 444 be between passivation layer 440 and the pixel electrode 442.

In another program of the present invention, restraining barrier 444 can overlap with pixel electrode 442, makes one part of pixel electrode 442 be between restraining barrier 444 and the passivation layer 440, shown in Figure 10 C.

On the other hand, absorption layer 452 is formed on the inside surface of second substrate 450, and comprises that the CLC color-filter layer of

sub-color filter

454a and 454b is formed on the absorption layer 452.Sub-color filter 454a of each of CLC color-filter layer and 454b are corresponding to a pixel region and the reflection light corresponding to the wavelength of one of red, green and blue look.Public electrode 456 is formed on CLC color-filter layer 454a and the 454b.Public electrode 456 is by transparent conductive material such as indium tin oxide (ITO) or indium-zinc oxide (IZO) formation.

Liquid crystal layer 460 places between public electrode 456 and the pixel electrode 442.

Phase shift films 472 and polarizer 474 are successively set on the outside surface of first substrate 410.Phase shift films 472 can be to have the quarter-wave plate (QWP) that λ/4 postpone, and polarizer 474 can be the linear polarization that a transmission is parallel to the linearly polarized photon of its axis of homology.

In the fourth embodiment of the present invention, form restraining barrier 444, and below data line 432, form first and second black matrix 416a and the 416b that all overlap with data line 432 every sides corresponding to the raceway groove of thin film transistor (TFT).Therefore, can prevent from thin film transistor (TFT), to produce leakage current, and the light that is blocked in around the data line 432 leaks.Here, data line 432 can have the width of about 8 μ m.Though in the 4th embodiment, restraining barrier 444 is formed between passivation layer 440 and the pixel electrode 442, restraining barrier 444 also can be formed on the pixel electrode 442.

Under the situation that does not break away from the spirit or scope of the present invention, can and should be used as various changes and modification obviously to those skilled in the art to manufacturing of the present invention.Therefore, the present invention should cover the modifications and variations of the present invention that fall in appended claims and the equivalents scope thereof.

Claims

1, a kind of reflective type liquid crystal display device comprises:

First and second substrates that separate and face one another;

The transistorized passivation layer of cover film;

Phase shift films on the outside surface of first substrate;

Polarizer on phase shift films;

Color-filter layer on the inside surface of second substrate;

Public electrode on color-filter layer; With

Liquid crystal layer between public electrode and pixel electrode,

Wherein the restraining barrier is made of metal material,

2, according to the device of claim 1, also be included in the absorption layer on the inside surface of second substrate, wherein color-filter layer is the cholesteryl liquid crystal color-filter layer.

3, according to the device of claim 1, also be included in the reflection horizon on the inside surface of second substrate, wherein color-filter layer is the absorption-type color-filter layer.

4, according to the device of claim 1, wherein the restraining barrier comprises chromium.

5, according to the device of claim 1, wherein at least a portion restraining barrier is between passivation layer and pixel electrode.

6, according to the device of claim 1, wherein the restraining barrier is positioned on the pixel electrode.

7, according to the device of claim 1, wherein passivation layer comprises a kind of in benzocyclobutene and the acryl resin.

8, a kind of reflective type liquid crystal display device comprises:

First and second substrates that separate and face one another;

The transistorized passivation layer of cover film;

Phase shift films on the outside surface of first substrate;

Polarizer on phase shift films;

Color-filter layer on the inside surface of second substrate;

Public electrode on color-filter layer; With

Liquid crystal layer between public electrode and pixel electrode,

9, device according to Claim 8 also is included in the absorption layer on the inside surface of second substrate, and wherein color-filter layer is the cholesteryl liquid crystal color-filter layer.

10, device according to Claim 8 also is included in the reflection horizon on the inside surface of second substrate, and wherein color-filter layer is the absorption-type color-filter layer.

11, device according to Claim 8, wherein pixel electrode and adjacent data line overlap.

12, device according to Claim 8, wherein first and second black matrix are by constituting with the restraining barrier identical materials.

13, device according to Claim 8, wherein the restraining barrier is made of metal material.

14, according to the device of claim 13, wherein the restraining barrier comprises chromium.

15, device according to Claim 8, wherein the restraining barrier is arranged between passivation layer and the pixel electrode.

16, device according to Claim 8, wherein the restraining barrier is arranged on the pixel electrode.

17, a kind of reflective type liquid crystal display device comprises:

First and second substrates that separate and face one another;

First and second black matrix on the inside surface of first substrate;

Many select liness on the inside surface of first substrate;

The transistorized passivation layer of cover film;

Phase shift films on the outside surface of first substrate;

Polarizer on phase shift films;

Color-filter layer on the inside surface of second substrate;

Public electrode on color-filter layer; With

Liquid crystal layer between public electrode and pixel electrode,

18, according to the device of claim 17, also be included in the absorption layer on the inside surface of second substrate, wherein color-filter layer is the cholesteryl liquid crystal color-filter layer.

19, according to the device of claim 17, also be included in the reflection horizon on the inside surface of second substrate, wherein color-filter layer is the absorption-type color-filter layer.

20, according to the device of claim 17, wherein pixel electrode and adjacent data line overlap.

21, according to the device of claim 17, wherein first and second black matrix are by constituting with the select lines identical materials.

22, according to the device of claim 17, also be included in the coating between first and second black matrix and the select lines.

23, according to the device of claim 17, wherein the restraining barrier is made of metal material.

24, according to the device of claim 17, wherein the restraining barrier is arranged between passivation layer and the pixel electrode.

25, according to the device of claim 17, wherein the restraining barrier is arranged on the pixel electrode.