CN1521454A - Case material for microwave oven - Google Patents

Case material for microwave oven Download PDF

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Publication number
CN1521454A
CN1521454A CNA031153127A CN03115312A CN1521454A CN 1521454 A CN1521454 A CN 1521454A CN A031153127 A CNA031153127 A CN A031153127A CN 03115312 A CN03115312 A CN 03115312A CN 1521454 A CN1521454 A CN 1521454A
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CN
China
Prior art keywords
micro
wave oven
oven casing
metal
layer
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Pending
Application number
CNA031153127A
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Chinese (zh)
Inventor
李宏强
陈鸿
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Tongji University
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Tongji University
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Application filed by Tongji University filed Critical Tongji University
Priority to CNA031153127A priority Critical patent/CN1521454A/en
Publication of CN1521454A publication Critical patent/CN1521454A/en
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Abstract

The invention discloses a microwave oven housing material comprising single layer or multi layer wire mesh screen and single layer or multi layer metallic dielectric composite films of quasi-semiconductor well symmetrical structure. The invention can transparent property in the visible region on one hand, and mask requested microwave in working section or with longer wavelength.

Description

A kind of micro-wave oven casing material
Technical field:
The present invention relates to a kind of observation window that is used for electromagnetic wave shielding, particularly a kind of micro-wave oven casing material that constitutes by the optics laminated film of woven wire and based semiconductor SQW symmetrical structure.
Background technology:
Micro-wave oven casing adopts metallic plate in the existing technology, because metallic plate is opaque, so the metallic plate in micro-wave oven front has adopted eyed structure, so that the user observes the food of the inside.The operating frequency of micro-wave oven generally is placed on the resonant frequency of water, promptly near 2450 megahertzes, can have in addition and utilize the optical frequency micro-wave oven of infrared waves source heating as miscellaneous function.
Summary of the invention:
The technical problem to be solved in the present invention is: because the pore size of eyed structure in the prior art, the user can not clearly observe the food situation of the inside, if but the aperture of eyed structure is enlarged, then can reduce the protective capacities of housing to microwave.The present invention is that the technical scheme that solves the problems of the technologies described above employing is: a kind of micro-wave oven case material is provided, comprise woven wire, described woven wire is a substance or multiple, described woven wire is connected with the metal and dielectric laminated film, and described metal and dielectric laminated film comprises the based semiconductor SQW symmetrical structure of individual layer or multilayer.Woven wire itself has good attenuation to microwave, and this makes the microwave that has only relative smaller power reveal irradiation to the metal and dielectric multilayer film, is unlikely to destroy multilayer film, reaches dual protection effect simultaneously.
Described substance or multiple woven wire are characterised in that: every heavy metal silk screen is organized stretching or is organized stretching filament more by list and constitutes, all in same plane and parallel to each other, any two filaments on the same group are not parallel each other for any two filaments in every group of filament.Vertical range in arbitrary group of wire between adjacent two filaments is not more than 1/5 times of desired micro-wave oven operation wavelength.The diameter of described filament is between 0.00002 millimeter to 5 millimeters, and material adopts electric conductivity good metal or alloy, as gold, silver, copper, aluminium, stainless steel etc.Every filament two ends all reach or surpass the position at respective window place and cover window fully, and further, described woven wire obtains by the method for braiding in the prior art or etching.Further, if when there is the back work pattern of infrared optical frequency heating in micro-wave oven, material of the present invention can shield 0.7 micron light to 20 micron wave lengths more than 99%.
The structure of described metal and dielectric laminated film is similar to semiconductor quantum well structures, two inducing layers and the middle functional layer of being placed by symmetry constitute, the inducing layer that described symmetry is placed on the functional layer both sides is respectively transparent two-layered medium film-substrate, and the arrangement of its structure and each layer film is respectively as A 1B 1And B 2A 2, A wherein 1, A 2And B 1, B 2Representative has two kinds of transparent materials of different refractivity respectively, as zinc sulphide and magnesium fluoride.The actual (real) thickness of each inducing layer in 2.0 nanometers between 10000.0 nanometers, the optical thickness of two inducing layers can be identical or different, the thickness proportion of the film in two inducing layers can be identical or different, the thickness of described functional layer, can be made of a kind of, two or more deielectric-coating and metal film between 10000.0 nanometers in 3.0 nanometers; Described functional layer comprises one deck metal dielectric-coating at least, and perhaps metal film, dielectric or the semiconductor medium film by multilayer constitutes, and every layer of metal film both sides are dielectric media film or semiconductor film, and the thickness of each layer metal can be the same or different.The dielectric media film that each layer is made of same material or the thickness of semiconductive thin film can be the same or different.Thickness is compounded in to the functional layer between 10000.0 nanometers in 3.0 nanometers between the inducing layer of symmetry placement, structure such as A 1B 1CB 2A 2, the A of front 1B 1Corresponding inducing layer, the B of back 2A 2Corresponding another inducing layer, the functional layer that composite dielectric dielectric film or semiconductor medium film are constituted in the metal level of the corresponding individual layer of middle C or the metal level of multilayer, wherein not compound film A in Yi Bian the inducing layer with functional layer 1Or A 2Compound with transparent backing material, perhaps not compound film A in the inducing layer on both sides with functional layer 1And A 2All compound with transparent backing material respectively, composite methods can deposited by electron beam evaporation or the method for sputter realize, compound between inducing layer and the functional layer, in the each several part between adjacent each layer film also can deposited by electron beam evaporation or the method for sputter realize.This structure shields other longer electromagenetic wave radiation of most infra-red radiations, ultra-violet radiation and wavelength when can allow a part or most visible transmission, perhaps shield other longer electromagenetic wave radiation of most infra-red radiations, ultraviolet and wavelength in the high transmission of the visible waveband that requires.For the situation that metal multilayer film is arranged in the functional layer, if guarantee in the visible-range of broad, the fluctuating of transmissivity is less, the characteristics of high regional transmission broad, keeping under the condition that the metal film gross thickness is constant, number of metal is constant, can be thicker near the thickness of metal film in the middle of the functional layer, the thickness the closer to the metal film of both sides inducing layer is thin more simultaneously, comprise this moment functional layer and both sides inducing layer overall structure all near or reach the center symmetry.When keeping both sides inducing layer total optical thickness separately, suitably regulate the thickness of two kinds of different transparent mediums in each inducing layer, by regulate the difference that can obtain high low transmissivity in the high regional transmission be not more than average transmittance 3% or 10% in.Two inducing layers of the present invention also can comprise the double-layer transparent film structure more than one-period respectively, ABAB...AB for example, be BABA...BA at the functional layer opposite side accordingly, the inducing layer that perhaps mixes simultaneously in functional layer forms multiple quantum trap structure, the inducing layer of this preferred both sides has the situation of identical periodicity and identical optics gross thickness, and this moment is because repeatedly resonant reflection effect and the easier high regional transmission in very wide visible region that obtains.
Among the present invention other preferentially is chosen as: have at least two groups of wires orthogonal; Have at least one filament conducting in layer of metal film and at least one group of filament in the composite multilayer membrane at least; Has layer of metal film and microwave oven cavity conducting or ground connection in the composite multilayer membrane at least; At least one filament at least one group of filament and microwave oven cavity conducting or ground connection.
In the transparent materials such as the molten solid polyester that at one end is compounded with the metal and dielectric multilayer film of woven wire, glass, perhaps be bonded on the transparent substrates that is compounded with the metal and dielectric multilayer film among the present invention with transparent bonding agent.A preferred structure of the present invention is that optical path difference (normal incidence) between metal and dielectric laminated film and the nearest with it one group of wire is near 1/4 times of micro-wave oven operation wavelength, decide with the difference of 1/4 wavelength parameter, make to be close to zero most in the amplitude of the electric-field intensity of the electromagnetic field on the surface of that layer of metal film of close woven wire by real material.
The present invention contrasts existing technology, when guaranteeing that the visible region better sees through characteristic, and the microwave of the service band of shielding requirements and long wavelength's microwave more, as use that then the while can shield corresponding optical frequency electromagnetic wave with the micro-wave oven that has optical frequency to select.
Description of drawings:
Fig. 1 is the structural representation of a kind of micro-wave oven casing material of the present invention.
Fig. 2 is the structural representation of functional layer part in the metal and dielectric multilayer film of the class quantum well structure in a kind of micro-wave oven casing material of the present invention.
Fig. 3 is the upright projection schematic diagram of woven wire in the observation window plane in a kind of micro-wave oven casing material of the present invention.
The specific embodiment:
As shown in Figure 1, a kind of micro-wave oven casing material of the present invention comprises woven wire, and described woven wire is a substance or multiple, described woven wire is connected with the metal and dielectric laminated film, and described metal and dielectric laminated film comprises the based semiconductor SQW symmetrical structure of individual layer or multilayer.Woven wire wherein is made of two groups of mutually perpendicular copper wires shown in 4 among Fig. 1, and the diameter of copper wire is 0.045 millimeter, and the distance in every group of copper wire between any two two neighbours' the parallel copper wire is 5 millimeters.Not directly conducting between two groups of copper wires, all blow is in quartz glass.The one side of glass is compounded with the single or multiple lift metal and dielectric plural layers of based semiconductor quantum well structure, has the structure of foregoing 1/4 a wavelength light path simultaneously in the design, shown in 5 minutes among Fig. 1.In another preferred embodiment of the present invention, copper wire is changed to the metal filamentary silver of 0.04 mm dia, the distance in every group of filamentary silver between any two adjacent parallel filamentary silvers is 4 millimeters.Multi-layer film structure among the present invention is made of inducing layer 1,3 and functional layer 2, and described inducing layer 1,3 is respectively by two-layer transparent dielectric film A 1, B 1And B 2, A 2Constitute, described functional layer 2 adopts metal material, and described functional layer 2 is compounded between the inducing layer 1,3, and between 10000 nanometers, described functional layer is a single-layer metal film to the thickness of described functional layer 2 in 3 nanometers.As shown in Figure 2, described functional layer 2 also can be made of the metal film and the dielectric media film of multilayer.Described functional layer is compound to described inducing layer can adopts the electron beam evaporation in the prior art or the method for sputter.In a preferred embodiment of the invention, the film A in the inducing layer 1,3 1, A 2All adopt zinc sulphide, both thickness is identical, in 2 nanometers between 150 nanometers.Film B 1, B 2All adopt magnesium fluoride, both thickness is identical, in 2 nanometers between 250 nanometers.Inducing layer 1,3 symmetry is placed.The optics gross thickness of two inducing layers is identical.Functional layer 2 adopts thickness at the single-layer metal silverskin of 5 nanometers to 60 nanometers.In another preferred embodiment of the present invention, the film A in the inducing layer 1,3 1, A 2Adopt zinc sulphide, both thickness is identical, in 2 nanometers between 150 nanometers.Film B 1, B 2Adopt magnesium fluoride, both thickness is identical, in 2 nanometers between 250 nanometers.Inducing layer 1,3 symmetry is placed.The optics gross thickness of two inducing layers is identical.It is 5 nanometers to the metal silverskin and 2 layer thicknesses of 60 nanometers is the magnesium fluoride films of 100 nanometers to 200 nanometers that functional layer 2 adopts 3 layer thicknesses.Its arrangement mode is every double layer of metal film therebetween one deck dielectric film.

Claims (28)

1, a kind of micro-wave oven casing material, comprise woven wire, it is characterized in that: described woven wire is a substance or multiple, and described woven wire is connected with the metal and dielectric laminated film, and described metal and dielectric laminated film comprises the based semiconductor SQW symmetrical structure of individual layer or multilayer.
2, a kind of micro-wave oven casing material as claimed in claim 1, it is characterized in that: every heavy metal silk screen is made of one or more groups stretching filament.
3, a kind of micro-wave oven casing material as claimed in claim 2 is characterized in that: any two filaments all are in the same plane and parallel to each other in every group of filament.
4, a kind of micro-wave oven casing material as claimed in claim 2, it is characterized in that: filament on the same group is not parallel each other.
5, as claim 2,3 described a kind of micro-wave oven casing materials, it is characterized in that: every group of wire all has another group wire discord at least, and it is parallel.
6, as claim 2,3 described a kind of micro-wave oven casing materials, it is characterized in that: in the described arbitrary group of wire, the vertical range between two adjacent and parallel filaments is not more than desired 1/2 times by microwave wavelength.
7, as claim 2,3 described a kind of micro-wave oven casing materials, it is characterized in that: every group of wire all has at least another group wire vertical with it.
8, as claim 2,3 described a kind of micro-wave oven casing materials, it is characterized in that: the vertical range in every group of wire between adjacent and parallel two filaments is not more than desired 1/4 times by microwave wavelength.
9, as claim 2,3 described a kind of micro-wave oven casing materials, it is characterized in that: the vertical range in every group of wire between adjacent and parallel two filaments is not more than desired 1/6 times by microwave wavelength.
10, as claim 2,3 described a kind of micro-wave oven casing materials, it is characterized in that: the vertical range in every group of wire between adjacent and parallel two filaments is not more than desired 1/10 times by microwave wavelength.
11, a kind of micro-wave oven casing material as claimed in claim 2 is characterized in that: the material that constitutes woven wire is good conductors such as gold, silver, copper, aluminium, stainless steel.
12, a kind of micro-wave oven casing material as claimed in claim 2, it is characterized in that: the diameter of described filament is between 0.00002 millimeter to 5 millimeters.
13, a kind of micro-wave oven casing material as claimed in claim 2 is characterized in that: the material of fixing metal silk is fully transparent.
14, as claim 2,3,13 described a kind of micro-wave oven casing materials, it is characterized in that: the transparent material part under the woven wire is directly in bonding with the metal and dielectric laminated film of class quantum well structure.
15, as claim 2,3,13 described a kind of micro-wave oven casing materials, it is characterized in that: woven wire or the transparent material that connects silk screen in order to cast partly are compounded in the end in the transparent backing material, and the metal and dielectric laminated film of class quantum well structure is compounded in the other end of substrate.
16, as arbitrary described a kind of micro-wave oven casing material in the claim 2,3,15, it is characterized in that: the optical path difference between metal and dielectric laminated film and the nearest with it one group of wire is near 1/4 times of the micro-wave oven operation wavelength.
17, as claim 2,3,13 described a kind of micro-wave oven casing materials, it is characterized in that: the transparent material part of woven wire casting and the metal and dielectric laminated film of class quantum well structure are combined with each other, it is high through the regional transmissivity that has more than or equal to 50%, the electromagnetic wave of shielding requirements microwave band and radio wave band, reveal be not more than 100,000 of incident electromagnetic wave energy/.
18, a kind of micro-wave oven casing material as claimed in claim 17 is characterized in that: described height sees through the zone and comprises near-infrared and mid infrared region.
19, a kind of micro-wave oven casing material as claimed in claim 17 is characterized in that: place 1M to the scope of 1G hertz to the shielding attenuation of microwave more than 60DB, high regional transmission transparency is between 60-90% in the visible region.
20, a kind of micro-wave oven casing material as claimed in claim 1, it is characterized in that: described metal and dielectric multilayer film is made of inducing layer and the middle functional layer that symmetry is placed on both sides, it is characterized in that: the inducing layer that described symmetry is placed on both sides respectively is made of two-layer different transparent dielectric film, the inducing layer optical thickness of both sides is identical, described functional layer is compounded between the inducing layer of symmetry placement, structure such as A 1B 1CB 2A 2, the A of front 1B 1A corresponding described inducing layer that constitutes by two-layer different transparent dielectric film, the B of back 2A 2Corresponding described another inducing layer that constitutes by two-layer different transparent dielectric film, middle C represents functional layer, and the inducing layer that mixes simultaneously in the described functional layer forms multiple quantum well structure.
21, as claim 1,2,3 described a kind of micro-wave oven casing materials, it is characterized in that: have at least one filament conducting in layer of metal film and at least one group of filament in the composite multilayer membrane at least.
23, as claim 1,2,3 described a kind of micro-wave oven casing materials is characterized in that: have layer of metal film and microwave oven cavity conducting in the composite multilayer membrane at least.
24, as claim 1,2,3 described a kind of micro-wave oven casing materials is characterized in that: have layer of metal film ground connection in the composite multilayer membrane at least.
25, as claim 1,2,3 described a kind of micro-wave oven casing materials, it is characterized in that: at least one filament at least one group of filament and microwave oven cavity conducting
26, as claim 1,2,3 described a kind of micro-wave oven casing materials, it is characterized in that: at least one filament ground connection at least one group of filament.
27, as claim 1,2,3 described a kind of micro-wave oven casing materials, it is characterized in that: the material that is used for complex metal wire-mesh, metal and dielectric multilayer film is quartz glass, lucite, polyester or transparent adhesive.
28, a kind of micro-wave oven casing material as claimed in claim 1 is characterized in that: described woven wire obtains by the method for braiding or etching.
29, a kind of micro-wave oven casing material as claimed in claim 1 is characterized in that: 0.7 micron the light to 20 micron wave lengths of described material shielding more than 99%.
CNA031153127A 2003-01-31 2003-01-31 Case material for microwave oven Pending CN1521454A (en)

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CNA031153127A CN1521454A (en) 2003-01-31 2003-01-31 Case material for microwave oven

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Application Number Priority Date Filing Date Title
CNA031153127A CN1521454A (en) 2003-01-31 2003-01-31 Case material for microwave oven

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103712251A (en) * 2013-12-16 2014-04-09 宁波方太厨具有限公司 Door body structure of microwave oven and microwave oven adopting same
WO2018223675A1 (en) * 2017-06-08 2018-12-13 广东美的厨房电器制造有限公司 Microwave shielding plate and microwave cooking device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103712251A (en) * 2013-12-16 2014-04-09 宁波方太厨具有限公司 Door body structure of microwave oven and microwave oven adopting same
CN103712251B (en) * 2013-12-16 2016-04-06 宁波方太厨具有限公司 A kind of door for microwave oven body structure and employing have the micro-wave oven of this door body structure
WO2018223675A1 (en) * 2017-06-08 2018-12-13 广东美的厨房电器制造有限公司 Microwave shielding plate and microwave cooking device
US11582840B2 (en) 2017-06-08 2023-02-14 Guangdong Midea Kitchen Appliances Manufacturing Co., Ltd. Microwave shielding plate and microwave cooking device

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