CN2637939Y - Microwave oven shell - Google Patents

Microwave oven shell Download PDF

Info

Publication number
CN2637939Y
CN2637939Y CN 03228681 CN03228681U CN2637939Y CN 2637939 Y CN2637939 Y CN 2637939Y CN 03228681 CN03228681 CN 03228681 CN 03228681 U CN03228681 U CN 03228681U CN 2637939 Y CN2637939 Y CN 2637939Y
Authority
CN
China
Prior art keywords
micro
wave oven
group
wire
filament
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 03228681
Other languages
Chinese (zh)
Inventor
李宏强
陈鸿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongji University
Original Assignee
Tongji University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongji University filed Critical Tongji University
Priority to CN 03228681 priority Critical patent/CN2637939Y/en
Application granted granted Critical
Publication of CN2637939Y publication Critical patent/CN2637939Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Laminated Bodies (AREA)

Abstract

The utility model discloses a micro-wave oven casing, on the basis of defending the micro-wave by the casing, simultaneously the visible light can penetrate the casing and the condition of the food in the micro-wave oven can be easily observed. The key point of the technic proposal is that: the casing is formed by a single-layer or a multi-layer metal power-medium composite-film which has a symmetrical structure of a single-layer or a multi-layer metal mesh and a similar semiconductor quantum-well. Compared with the prior art, the utility model can shield the microwave of the required working wave-band and the longer wavelength microwave and simultaneously guarantees better penetrating characteristic of the visible light zone. And if using a microwave oven with light-frequency selecting capability, the utility model can simultaneously shield the corresponding light-frequency electromagnetic wave.

Description

A kind of micro-wave oven casing
Technical field:
The utility model relates to a kind of observation window that is used for electromagnetic wave shielding, particularly a kind of micro-wave oven casing that is made of the optics laminated film of woven wire and based semiconductor quantum well symmetrical structure.
Background technology:
Micro-wave oven casing adopts metallic plate in the existing technology, because metallic plate is opaque, so the metallic plate in microwave oven front has adopted eyed structure, so that the user observes the food of the inside.
Summary of the invention:
The technical problems to be solved in the utility model is: because the pore size of the eyed structure in the prior art, the user can not clearly observe the food situation of the inside, if but the aperture of eyed structure is enlarged, then can reduce the protective capacities of housing to microwave.The utility model is that the technical scheme that solves the problems of the technologies described above employing is: a kind of micro-wave oven casing material is provided, comprise woven wire, described woven wire is a substance or multiple, described woven wire is connected with the metal and dielectric laminated film, and described metal and dielectric laminated film comprises the based semiconductor quantum well symmetrical structure of individual layer or multilayer.Woven wire itself has good attenuation to microwave, and this makes the microwave that has only relative smaller power reveal irradiation to the metal and dielectric multilayer film, is unlikely to destroy multilayer film, reaches dual protection effect simultaneously.
Described substance or multiple woven wire are characterised in that: every heavy metal silk screen is organized stretching or is organized stretching filament more by list and constitutes, all in same plane and parallel to each other, any two filaments on the same group are not parallel each other for any two filaments in every group of filament.Vertical range in arbitrary group of wire between adjacent two filaments is not more than 1/5 times of desired microwave oven operation wavelength.The diameter of described filament is between 0.00002 millimeter to 5 millimeters, and material adopts electric conductivity good metal or alloy, as gold, silver, copper, aluminium, stainless steel etc.Every filament two ends all reach or surpass the position at respective window place and cover window fully.
The similar of described metal and dielectric laminated film is in semiconductor quantum well structures, two inducing layers and the middle functional layer of being placed by symmetry constitute, the inducing layer that described symmetry is placed on the functional layer both sides is respectively transparent two-layered medium film-substrate, and the arrangement of its structure and each layer film is respectively as A 1B 1And B 2A 2, A wherein 1, A 2And B 1, B 2Representative has two kinds of transparent materials of different refractivity respectively, as zinc sulphide and magnesium fluoride.The actual (real) thickness of each inducing layer in 2.0 nanometers between 10000.0 nanometers, the optical thickness of two inducing layers can be identical or different, the thickness proportion of the film in two inducing layers can be identical or different, the thickness of described functional layer, can be made of a kind of, two or more deielectric-coating and metal film between 10000.0 nanometers in 3.0 nanometers; Described functional layer comprises one deck metal dielectric-coating at least, and perhaps metal film, dielectric or the semiconductor medium film by multilayer constitutes, and every layer of metal film both sides are dielectric media film or semiconductor film, and the thickness of each layer metal can be the same or different.The dielectric media film that each layer is made of same material or the thickness of semiconductive thin film can be the same or different.Thickness is compounded in to the functional layer between 10000.0 nanometers in 3.0 nanometers between the inducing layer of symmetry placement, structure such as A 1B 1CB 2A 2, the A of front 1B 1Corresponding inducing layer, the B of back 2A 2Corresponding another inducing layer, the functional layer that composite dielectric dielectric film or semiconductor medium film are constituted in the metal level of the corresponding individual layer of middle C or the metal level of multilayer, wherein not compound film A in Yi Bian the inducing layer with functional layer 1Or A 2Compound with transparent backing material, perhaps not compound film A in the inducing layer on both sides with functional layer 1And A 2All compound with transparent backing material respectively, composite methods can deposited by electron beam evaporation or the method for sputter realize, compound between inducing layer and the functional layer, in the each several part between adjacent each layer film also can deposited by electron beam evaporation or the method for sputter realize.This structure shields other longer electromagenetic wave radiation of most infrared radiations, ultra-violet radiation and wavelength when can allow a part or most visible transmission, perhaps shield other longer electromagenetic wave radiation of most infrared radiations, ultraviolet and wavelength in the high transmission of the visible waveband that requires.For the situation that metal multilayer film is arranged in the functional layer, if guarantee in the visible-range of broad, the fluctuating of transmissivity is less, the characteristics of high regional transmission broad, keeping under the condition that the metal film gross thickness is constant, number of metal is constant, can be thicker near the thickness of metal film in the middle of the functional layer, the thickness the closer to the metal film of both sides inducing layer is thin more simultaneously, comprise this moment functional layer and both sides inducing layer overall structure all near or reach the center symmetry.When keeping both sides inducing layer total optical thickness separately, suitably regulate the thickness of two kinds of different transparent mediums in each inducing layer, by regulate the difference that can obtain high low transmissivity in the high regional transmission be not more than average transmittance 3% or 10% in.Two inducing layers described in the utility model also can comprise the double-layer transparent film structure more than one-period respectively, ABAB...AB for example, be BABA...BA at the functional layer opposite side accordingly, the inducing layer that perhaps mixes simultaneously in functional layer forms multiple quantum trap structure, the inducing layer of this preferred both sides has the situation of identical periodicity and identical optics gross thickness, and this moment is because repeatedly resonant reflection effect and the easier high regional transmission in very wide visible region that obtains.
In the utility model other preferentially is chosen as: have at least two groups of wires orthogonal; Have at least one filament conducting in layer of metal film and at least one group of filament in the composite multilayer membrane at least; Has layer of metal film and microwave oven cavity conducting or ground connection in the composite multilayer membrane at least; At least one filament at least one group of filament and microwave oven cavity conducting or ground connection.
In the transparent materials such as the molten solid polyester that at one end is compounded with the metal and dielectric multilayer film of woven wire, glass, perhaps be bonded on the transparent substrates that is compounded with the metal and dielectric multilayer film in the utility model with transparent bonding agent.A preferred structure of the present utility model is that optical path difference (normal incidence) between metal and dielectric laminated film and the nearest with it one group of wire is near 1/4 times of microwave oven operation wavelength, decide with the difference of 1/4 wavelength parameter, make to be close to zero most in the amplitude of the electric field strength of the electromagnetic field on the surface of that layer of metal film of close woven wire by real material.
The utility model contrasts existing technology, when guaranteeing that the visible region better sees through characteristic, and the microwave of the service band of shielding requirements and long wavelength's microwave more, as use that then the while can shield corresponding optical frequency electromagnetic wave with the microwave oven that has optical frequency to select.
Description of drawings:
Fig. 1 is the structural representation of a kind of micro-wave oven casing of the present utility model.
Fig. 2 is the structural representation of functional layer part in the metal and dielectric multilayer film of the class quantum well structure in a kind of micro-wave oven casing of the present utility model.
Fig. 3 is the upright projection schematic diagram of woven wire in the observation window plane in a kind of micro-wave oven casing of the present utility model.
Embodiment:
As shown in Figure 1, a kind of micro-wave oven casing material of the utility model, comprise woven wire, described woven wire is a substance or multiple, described woven wire is connected with the metal and dielectric laminated film, and described metal and dielectric laminated film comprises the based semiconductor quantum well symmetrical structure of individual layer or multilayer.Woven wire wherein is made of two groups of mutually perpendicular copper wires shown in 4 among Fig. 1, and the diameter of copper wire is 0.045 millimeter, and the distance in every group of copper wire between any two two neighbours' the parallel copper wire is 5 millimeters.Not directly conducting between two groups of copper wires, all blow is in quartz glass.The one side of glass is compounded with the single or multiple lift metal and dielectric plural layers of based semiconductor quantum well structure, has the structure of foregoing 1/4 a wavelength light path simultaneously in the design, shown in 5 among Fig. 1.In another preferred embodiment of the present utility model, copper wire is changed to the metal filamentary silver of 0.04 mm dia, the distance in every group of filamentary silver between any two adjacent parallel filamentary silvers is 4 millimeters.Multi-layer film structure in the utility model is made of inducing layer 1,3 and functional layer 2, and described inducing layer 1,3 is respectively by two-layer transparent dielectric film A 1, B 1And B 2, A 2Constitute, described functional layer 2 adopts metal material, and described functional layer 2 is compounded between the inducing layer 1,3, and between 10000 nanometers, described functional layer is a single-layer metal film to the thickness of described functional layer 2 in 3 nanometers.As shown in Figure 2, described functional layer 2 also can be made of the metal film and the dielectric media film of multilayer.Described functional layer is compound to described inducing layer can adopts the electron beam evaporation in the prior art or the method for sputter.In a preferred embodiment of the present utility model, the film A in the inducing layer 1,3 1, A 2All adopt zinc sulphide, both thickness is identical, in 2 nanometers between 150 nanometers.Film B 1, B 2All adopt magnesium fluoride, both thickness is identical, in 2 nanometers between 250 nanometers.Inducing layer 1,3 symmetry is placed.The optics gross thickness of two inducing layers is identical.Functional layer 2 adopts thickness at the single-layer metal silverskin of 5 nanometers to 60 nanometers.In another preferred embodiment of the present utility model, the film A in the inducing layer 1,3 1, A 2Adopt zinc sulphide, both thickness is identical, in 2 nanometers between 150 nanometers.Film B 1, B 2Adopt magnesium fluoride, both thickness is identical, in 2 nanometers between 250 nanometers.Inducing layer 1,3 symmetry is placed.The optics gross thickness of two inducing layers is identical.It is 5 nanometers to the metal silverskin and 2 layer thicknesses of 60 nanometers is the magnesium fluoride films of 100 nanometers to 200 nanometers that functional layer 2 adopts 3 layer thicknesses.Its arrangement mode is every double layer of metal film therebetween one deck dielectric film.

Claims (18)

1, a kind of micro-wave oven casing, comprise woven wire, it is characterized in that: described woven wire is a substance or multiple, and described woven wire is connected with the metal and dielectric laminated film, and described metal and dielectric laminated film comprises the based semiconductor quantum well symmetrical structure of individual layer or multilayer.
2, a kind of micro-wave oven casing as claimed in claim 1 is characterized in that: every heavy metal silk screen is made of one or more groups stretching filament.
3, a kind of micro-wave oven casing as claimed in claim 2 is characterized in that: any two filaments all are in the same plane and parallel to each other in every group of filament.
4, a kind of micro-wave oven casing as claimed in claim 2, it is characterized in that: filament on the same group is not parallel each other.
5, as claim 2,3 described a kind of micro-wave oven casings, it is characterized in that: every group of wire all has another group wire discord at least, and it is parallel.
6, as claim 2,3 described a kind of micro-wave oven casings, it is characterized in that: in the described arbitrary group of wire, the vertical range between two adjacent and parallel filaments is not more than desired 1/2 times by microwave wavelength.
7, as claim 2,3 described a kind of micro-wave oven casings, it is characterized in that: every group of wire all has at least another group wire vertical with it.
8, as claim 2,3 described a kind of micro-wave oven casings, it is characterized in that: the vertical range in every group of wire between adjacent and parallel two filaments is not more than desired 1/4 times by microwave wavelength.
9, as claim 2,3 described a kind of micro-wave oven casings, it is characterized in that: the vertical range in every group of wire between adjacent and parallel two filaments is not more than desired 1/6 times by microwave wavelength.
10, as claim 2,3 described a kind of micro-wave oven casings, it is characterized in that: the vertical range in every group of wire between adjacent and parallel two filaments is not more than desired 1/10 times by microwave wavelength.
11, a kind of micro-wave oven casing as claimed in claim 2 is characterized in that: the diameter of described filament is between 0.00002 millimeter to 5 millimeters.
12, as arbitrary described a kind of micro-wave oven casing in the claim 2,3, it is characterized in that: the optical path difference between metal and dielectric laminated film and the nearest with it one group of wire is near 1/4 times of the microwave oven operation wavelength.
13, as claim 1,2,3 described a kind of micro-wave oven casings, it is characterized in that: have at least one filament conducting in layer of metal film and at least one group of filament in the composite multilayer membrane at least.
14, as claim 1,2,3 described a kind of micro-wave oven casings, it is characterized in that: have layer of metal film and microwave oven cavity conducting in the composite multilayer membrane at least.
15, as claim 1,2,3 described a kind of micro-wave oven casings is characterized in that: have layer of metal film ground connection in the composite multilayer membrane at least.
16, as claim I, 2,3 described a kind of micro-wave oven casings, it is characterized in that: at least one filament at least one group of filament and microwave oven cavity conducting.
17, as claim 1,2,3 described a kind of micro-wave oven casings, it is characterized in that: at least one filament ground connection at least one group of filament.
18, as claim 1,2,3 described a kind of micro-wave oven casings, it is characterized in that: the material that is used for complex metal wire-mesh, metal and dielectric multilayer film is quartz glass, polymethyl methacrylate, polyester or transparent adhesive.
CN 03228681 2003-01-31 2003-01-31 Microwave oven shell Expired - Fee Related CN2637939Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 03228681 CN2637939Y (en) 2003-01-31 2003-01-31 Microwave oven shell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 03228681 CN2637939Y (en) 2003-01-31 2003-01-31 Microwave oven shell

Publications (1)

Publication Number Publication Date
CN2637939Y true CN2637939Y (en) 2004-09-01

Family

ID=34291000

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 03228681 Expired - Fee Related CN2637939Y (en) 2003-01-31 2003-01-31 Microwave oven shell

Country Status (1)

Country Link
CN (1) CN2637939Y (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102843799A (en) * 2012-08-17 2012-12-26 安方高科电磁安全技术(北京)有限公司 Device and method for suppressing electromagnetic leakage of microwave oven

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102843799A (en) * 2012-08-17 2012-12-26 安方高科电磁安全技术(北京)有限公司 Device and method for suppressing electromagnetic leakage of microwave oven

Similar Documents

Publication Publication Date Title
CN100553423C (en) A kind of electromagnetic shielding optical window with double-layer pane metallic mesh structure
CN100556266C (en) A kind of electromagnetic shielding optical window with double-layer circular ring metallic mesh structure
CN100403866C (en) Electromagnetic screening optical window with circular ring metal meshed gate structure
CN104360424B (en) A kind of broadband Terahertz meta-material absorber based on L-type structure
KR0130472B1 (en) Transparent body for shielding a electro-magnetic wave
US6855369B2 (en) Transparent laminate, method for producing the same, and plasma display panel
KR100667637B1 (en) Layered product
US20130114133A1 (en) Thin films for energy efficient transparent electromagnetic shields
CN1429070A (en) Electromagnetic shielded observation window
CN112867379B (en) Transparent ultra-wideband electromagnetic shielding device
WO2020111210A1 (en) Conductive nonwoven fabric
CN1522107A (en) An electromagnetic screen observation window
CN113666645A (en) Infrared and radar compatible stealthy window glass with sound and heat insulation function
JP2003531094A (en) Transparent substrate having metal components and use thereof
CN2637939Y (en) Microwave oven shell
Scalora et al. Laminated photonic band structures with high conductivity and high transparency: metals under a new light
CN1521454A (en) Case material for microwave oven
CN1429069A (en) Shell body material for microwave oven
JP2017181911A (en) Radio wave transmissive infrared reflection laminate and closing member
CN1425555A (en) Transparent metal dielectric composite material
CN2627625Y (en) Electromagnetic shielding observation window
CN115425428A (en) Ultra-wideband optical transparent microwave absorption device based on super-surface structure
JPH11150393A (en) Transparent radio wave absorber and production thereof
US8535810B2 (en) Transparent plastic film for shielding electromagnetic waves and method for producing a plastic film of this type
JP4390885B2 (en) Transparent field wave shielding structure and manufacturing method thereof

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee