CN1506492A - Chromium oxide coating preparing process - Google Patents
Chromium oxide coating preparing process Download PDFInfo
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- CN1506492A CN1506492A CNA021447071A CN02144707A CN1506492A CN 1506492 A CN1506492 A CN 1506492A CN A021447071 A CNA021447071 A CN A021447071A CN 02144707 A CN02144707 A CN 02144707A CN 1506492 A CN1506492 A CN 1506492A
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- chromium oxide
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- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000000576 coating method Methods 0.000 title claims abstract description 17
- 229910000423 chromium oxide Inorganic materials 0.000 title claims abstract description 16
- 239000011248 coating agent Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title abstract description 13
- 239000011651 chromium Substances 0.000 claims abstract description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 14
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 6
- 238000007733 ion plating Methods 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims description 33
- 238000005516 engineering process Methods 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000002203 pretreatment Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000007747 plating Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 30
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000004062 sedimentation Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 208000018875 hypoxemia Diseases 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 230000005068 transpiration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000001149 thermolysis Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The chromium oxide coating preparing process is one ion plating process with pure chromium cathode target, anode connected to the vacuum chamber, low voltage and great current power supply of 15-40 V voltage and 10-100 A current, O2 as reaction gas, and Ar as protective gas. Before plating, high bias voltage of -700 to -1000 V is applied for glow discharge to bombard the base body surface for 2-5 min. The arc current Ia is 30-60 A and arc voltage is 15-40 V; and after bombardment, oxygen of flow rate 60-270 sccm at pressure 0.4-0.8 Pa is introduced, while a pulse bias Vp of from 0 to -500 V and duty ratio 0-40 % is applied. The said chromium oxide coating preparing process is low in cost, environment friendly, fast in deposition speed, low deposition temperature and high compactness.
Description
Technical field
The present invention relates to chromium oxide coating, specifically a kind of chromium oxide coating preparation technology.
Background technology
In all mineral and oxide compound, Cr
2O
3It is one of the hardest material.It has characteristics such as fabulous chemical stability, high temperature resistant property, frictional coefficient are little, can be used as the blocking layer of microelectronic device and the protective layer of wearing and tearing device.In addition, Cr
2O
3The thin film solar absorptive character are high and thermal transpiration is poor, and the selection absorption layer as solar collector also gets more and more people's extensive concerning.Result of study showed in the past, Cr
2O
3The film wear resisting property is good and frictional coefficient is low, but hardness is lower than Cr
2O
3The block hardness value.
Recent years, Columbus's (the Ohio, USA provincial capital) cloth mountain people such as (Bhushan) is at document: [magnetic recording is with the Study on Friction Properties (Tribological studies ofchromium oxide films formagnetic recording applications) of chromium oxide film, Bharat Bhushan, Gerad S.A.M.Theunissen, Xiaodong Li, solid film (Thin Solid Films 311 (1997) 67～80)] in put down in writing and utilize sputtering method to prepare the thick anoxic Cr of 200nm
2O
3Film, its hardness value is up to 29.5GPa.
This people such as (P.Hones) of flood of Switzerland (central Europe country) is at document: [sputtering technology is to Cr
2O
3Mechanical properties in films research (Influence of depositon parameters on mechanical properties ofsputter-deposited Cr
2O
3Thin films), P.Hones and F.Levy, investigation of materials journal (J.Mater.Res., Vol.14.NO.9, Sep 1999:3623～3629)] in put down in writing and utilize sputtering method to prepare the thick Cr in the 2 μ m left and right sides
2O
3Film, its hardness value is up to 32GPa.
At present, Cr
2O
3Method for manufacturing thin film mainly is sputtering method and chemical Vapor deposition process (CVD).Though these two kinds of methods all can be prepared Cr
2O
3Film, but every kind of method all has its weak point.Sputtering method is used target Cr more
2O
3, the cost height, and gained mostly is amorphous anoxic film, after the thermal treatment, portion C r
2O
3The film crystallization influences the performance of film, and sputtering method itself also has its weak point: concavity takes place on the target surface and corrodes ring in (1), makes the utilization of entire target only reach 50%; (2) the yielding cracking in target surface, therefore, service rating can not be too high, and sputter rate is restricted.CVD is processes such as thermolysis, thermal synthesis or chemistry transmission of utilizing gaseous substance, generates the process of solid deposited layer on solid surface, utilizes the CVD method, can be by decomposing Cr (C
5H
7O
2)
3And Cr (CO)
6, obtained smooth smooth Cr
2O
3Film, but it also has weak point: need reaction at high temperature, thereby limited for the body material kind that can be used to plated film, matrix is difficult to carry out local deposits, and the source and the reacted residual air of participating in reaction all have certain toxicity etc., carefully protection and operation.At present, do not see the report that adopts the arc ion plating legal system to be equipped with chromium oxide coating.
Summary of the invention
The object of the present invention is to provide a kind of economy, nuisanceless, sedimentation velocity is fast, can deposit at low temperatures and chromic oxide preparation technology that density is high.
To achieve these goals; technical solution of the present invention is to adopt the arc ion plating method; with pure chromium as the negative electrode target; anode links to each other with vacuum chamber, and negative electrode and anode are connected on the negative pole and the positive pole of low pressure, high-current dc power supply respectively, and the electric current of described direct supply is 10～100A; operating voltage is 15～40V; make reactant gases with oxygen, make protection gas with Ar gas, concrete steps are as follows:
1) polishing, cleaning, matrix is used the ultrasonic cleaning pre-treatment through the abrasive paper for metallograph grinding and polishing in acetone or alcohol;
2) after the shove charge vacuum chamber being evacuated to vacuum tightness is 2.0 * 10
-2～6.0 * 10
-3Pa feeds Ar gas, and pressure is 5 * 10
-2～8 * 10
-2Pa, add before the plated film-700V～-the high bias voltage of 1000V;
3) utilize glow discharge bombardment matrix surface 2～5min, arc current I
a: 30～60A, arc voltage: 15～40V;
4) matrix has been bombarded after, aerating oxygen, oxygen flow: 60～270sccm, operating pressure: 4.0～8.0 * 10
-1Pa, pulsed bias V
p: 0～-500V, dutycycle is 0～40%.
After described vacuum chamber vacuumizes, matrix is heated to 100～200 ℃ after, feed Ar gas again; Described high bias voltage is direct-current biasing or pulsed bias; Described matrix and target spacing are: 150～300mm; Described matrix is iron-based, nickel-base alloy, Wimet or pottery; The visual application requiring of described coat-thickness and realizing by the control growing time.
The present invention has following advantage:
1. an arc is used more.Cathode arc source of the present invention both can be used as evaporation source and ionization source, can be used as heating source and bombardment source again, realized that an arc uses more.
2. the present invention can realize low temperature depositing, but both deposition compact uniform thin film under the room temperature.
3. projectile energy height of the present invention, rete density height, intensity and good endurance.
4. sedimentation velocity of the present invention is fast, and film forming speed is fast, but coating thick film.
5. the present invention is good around plating property.Directly produce plasma body from the chromium target cathode, without the molten bath, target keeps solid state in the coating process, thereby the orientation is any, can realize multi-source associating plating, and rotational substrate mechanism is simple, and can realize revolution or rotation, so but the matrix of plating Any shape is good around plating property.
6. equipment used of the present invention is simple, adopts LVPS work, and is safe in utilization, and during the reaction plated film, the control of atmosphere also is simple total pressure control.
7. cost of the present invention is low.Adopt pure chromium target, Ar gas is made protection raw material, O
2Make reaction raw materials, its raw material is easy to get, and cost is low.
8. the present invention is pollution-free.Owing to do not adopt toxicity, corrodibility and dangerous gas, so there is not environmental pollution.
9. applied range of the present invention.Chromium oxide coating can be used as the blocking layer of microelectronic device and the protective layer of wearing and tearing device.In addition, Cr
2O
3The thin film solar absorptive character are high and thermal transpiration is poor, as the selection absorption layer of solar collector.
Description of drawings
Fig. 1 is the Cr of different oxygen flow deposit in the embodiment of the invention 1
2O
3The X-ray diffraction spectrum of film.
Fig. 2 is the Cr of different pulsed bias deposit in the embodiment of the invention 2
2O
3The X-ray diffraction spectrum of film.
Fig. 3 is the Cr of different arc current deposit in the embodiment of the invention 3
2O
3The X-ray diffraction spectrum of film.
Embodiment
The present invention adopts the arc ion plating method, has prepared chromium oxide coating.This know-why is mainly based on cold cathode vacuum discharge theory, arc electrode is at the moment that contacts with cathode surface Yu the leave electric arc that ignites, in case electric arc is ignited, low-voltage high-current power source will be kept the carrying out of arc discharge process between negative electrode and the anode, its electric current is generally 10～100 peaces, and operating voltage is 15-40V.These bright spots are just as very little launching site, the perdurability of each point is very short, be about several to several thousand microseconds, after finishing between at this moment, electric current just is distributed on other aspect of cathode surface and sets up enough launching conditions, causes near the cathode material the bright spot to evaporate in large quantities.
Embodiment 1
Equipment used is a MIP-8-800 type ion film coating machine, and as the negative electrode target, anode links to each other with vacuum chamber with pure chromium, and negative electrode and anode are connected on the negative pole and the positive pole of low pressure, high-current dc power supply respectively, and its electric current is 50A, and voltage is 20V; Matrix is of a size of: 15mm * 10mm * 2mm, and material is the 18-8 stainless steel, matrix is through the abrasive paper for metallograph grinding and polishing, in acetone, use ultrasonic cleaning 15min, after drying up, be positioned on the sample table in the vacuum deposition chamber, the spacing of matrix and target is about 240mm, and vacuum tightness reaches 8 * 10
-3During Pa, feed Ar gas earlier, pressure is 7 * 10
-2Pa adds before the plated film-the high bias voltage of 1000V, and described high bias voltage is a direct-current biasing, utilizes glow discharge bombardment matrix surface 2min, arc current I
a: 50A, arc voltage: 20V, after matrix bombarded, aerating oxygen only changed oxygen flow: 60～190sccm, operating pressure: 6.0 * 10
-1Pa, pulsed bias be-300V, and dutycycle is 20%, and depositing time is 30min, all feeds Ar gas in the whole process.
As shown in Figure 1, S represents matrix, and the result shows: utilize the arc ion plating method can successfully prepare Cr
2O
3Film.During the hypoxemia flow, at Cr
2O
3Find in the film to have the not Cr of complete reaction, its content reduces with the increase of oxygen flow, and oxygen flow is to Cr
2O
3The preferred orientation of film has considerable influence, and sedimentation rate slowly reduces with the increase of oxygen flow, at F
O2During=130sccm, have an obvious weight break point, above behind the 130sccm, sedimentation rate descends very slow.
Oxygen flow has considerable influence to the surface topography of film.During the hypoxemia flow, molten drops on surface is big and size is inhomogeneous, and quantity is many; When oxygen flow was higher, molten drops on surface was little and even, and quantity is few.
Embodiment 2
Difference from Example 1 is:
The electric current of direct supply is 100A, and voltage is 40V; Matrix is of a size of: 15mm * 10mm * 2mm, material is the 18-8 stainless steel, matrix is through the abrasive paper for metallograph grinding and polishing, in alcohol, use ultrasonic cleaning 15min, after drying up, be positioned on the sample table in the vacuum deposition chamber, the spacing of matrix and target is about 150mm, and after the shove charge vacuum chamber being evacuated to vacuum tightness is 6.0 * 10
-3Pa feeds Ar gas, and pressure is 5 * 10
-2Pa adds before the plated film-the high bias voltage of 700V, and described high bias voltage is a pulsed bias; Utilize glow discharge bombardment matrix surface 5min, arc current I
a: 50A, arc voltage: 20V; After matrix bombarded, aerating oxygen, oxygen flow: 130sccm, operating pressure: 4.0 * 10
-1Pa only changes pulsed bias: 0～-400V, dutycycle is 20%, depositing time is 30min.
As shown in Figure 2, S represents matrix, and the result shows: bias voltage has bigger influence to the preferred orientation of film.At bias voltage be-during 100V, Cr
2O
3Present (006) crystal face preferred orientation; Along with the increase of bias voltage, (006) crystal face X-ray diffraction peak disappears, and (300) crystal face X-ray diffraction peak intensity increases and is main preferred orientation.Cr
2O
3Depositing of thin film speed increases with bias voltage, but when bias voltage surpass-during 200V, sedimentation rate descends on the contrary.This is because under the higher biased, ion bombardment effects strengthens, due to sputter procedure is obvious.During no-bias, the big molten drop of film surface is many and size is inhomogeneous; Behind the biasing, molten drop obviously reduces; Along with the increase of bias voltage, the bombardment effect strengthens, and the surface quality of film improves.Bias voltage is to Cr
2O
3The hardness influence of film is obviously along with the increase of bias voltage, and hardness value increases, at V
p=-200V hardness value reaches and is 36GPa to the maximum.
Embodiment 3
Difference from Example 1 is:
The electric current of direct supply is 75A, and voltage is 30V; Matrix is of a size of: 15mm * 10mm * 2mm, material is the 18-8 stainless steel, matrix is through the abrasive paper for metallograph grinding and polishing, in acetone, use ultrasonic cleaning 15min, after drying up, be positioned on the sample table in the vacuum deposition chamber, the spacing of matrix and target is about 280mm, and after the shove charge vacuum chamber being evacuated to vacuum tightness is 6.0 * 10
-3Pa feeds Ar gas after matrix is heated to 150 ℃, and pressure is 6 * 10
-2Pa adds before the plated film-the high bias voltage of 800V, and described high bias voltage is a pulsed bias; Utilize glow discharge bombardment matrix surface 3min, only change arc current I
a: 30～60A, arc voltage: 20～40V; After matrix bombarded, aerating oxygen, oxygen flow: 130sccm, operating pressure: 8.0 * 10
-1Pa, pulsed bias be-300V, and dutycycle is 20%, and depositing time is 30min.
As shown in Figure 3, S represents matrix, and the result shows: arc current has considerable influence to the weave construction and the surface topography of chromium oxide coating.At I
aDuring=30A, Cr has appearred
2O
3The preferred orientation at (300) crystal face X-ray diffraction peak of film.Along with the increase of arc current, the intensity at (300) crystal face X-ray diffraction peak reduces gradually, and (104), (110) crystal face X-ray diffraction peak strengthen gradually.Along with reducing of electric current, the molten drop of film surface obviously reduces, and size is even, essentially no macrobead, and rete is fine and close and do not have a hole.
Claims (5)
1. chromium oxide coating preparation technology, it is characterized in that adopting the arc ion plating method, with pure chromium as the negative electrode target, anode links to each other with vacuum chamber, negative electrode and anode are connected on the negative pole and the positive pole of low pressure, high-current dc power supply respectively, the electric current of described direct supply is 10～100A, and operating voltage is 15～40V, and concrete steps are as follows:
1) polishing, cleaning, matrix is used the ultrasonic cleaning pre-treatment through the abrasive paper for metallograph grinding and polishing in acetone or alcohol;
2) after the shove charge vacuum chamber being evacuated to vacuum tightness is 2.0 * 10
-2～6.0 * 10
-3Pa feeds Ar gas, and pressure is 5 * 10
-2～8 * 10
-2Pa, add before the plated film-700V～-the high bias voltage of 1000V;
3) utilize glow discharge bombardment matrix surface 2～5min, arc current I
a: 30～60A, arc voltage: 15～40V;
4) matrix has been bombarded after, aerating oxygen, oxygen flow: 60～270sccm, operating pressure: 4.0～8.0 * 10
-1Pa, pulsed bias V
p: 0～-500V, dutycycle is 0～40%.
2. according to the described chromium oxide coating preparation technology of claim 1, it is characterized in that vacuum chamber vacuumizes after, matrix is heated to 100～200 ℃ after, feed Ar gas again.
3. according to claim 1 or 2 described chromium oxide coating preparation technologies, it is characterized in that high bias voltage is direct-current biasing or pulsed bias.
4. according to claim 1 or 2 described chromium oxide coating preparation technologies, it is characterized in that matrix and target spacing are: 150～300mm.
5. according to claim 1 or 2 described chromium oxide coating preparation technologies, it is characterized in that matrix is iron-based, nickel-base alloy, Wimet or pottery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02144707 CN1208498C (en) | 2002-12-06 | 2002-12-06 | Chromium oxide coating preparing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02144707 CN1208498C (en) | 2002-12-06 | 2002-12-06 | Chromium oxide coating preparing process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1506492A true CN1506492A (en) | 2004-06-23 |
| CN1208498C CN1208498C (en) | 2005-06-29 |
Family
ID=34232071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02144707 Expired - Fee Related CN1208498C (en) | 2002-12-06 | 2002-12-06 | Chromium oxide coating preparing process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1208498C (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100564266C (en) * | 2007-10-23 | 2009-12-02 | 南京大学 | The method of producing low pressure gas-phase of ferromagnetism chromium oxide compound nano-grain film |
| CN101307424B (en) * | 2007-05-16 | 2011-02-02 | 中国科学院金属研究所 | Process for preparing zirconia coating |
| CN101805883B (en) * | 2009-02-13 | 2012-06-06 | 比亚迪股份有限公司 | Film plating plate and preparation method thereof |
| CN104278234A (en) * | 2013-07-02 | 2015-01-14 | 中国科学院兰州化学物理研究所 | Preparation technology for self-lubricating coating with wide temperature range of room temperature to 800 DEG C |
| CN111334769A (en) * | 2020-04-02 | 2020-06-26 | 中国科学院宁波材料技术与工程研究所 | PbO-Cr2O3Co-doped film and preparation method and application thereof |
| CN112048702A (en) * | 2020-09-10 | 2020-12-08 | 中国航发沈阳黎明航空发动机有限责任公司 | Preparation method of coating for aeroengine parts |
| CN112962066A (en) * | 2021-02-04 | 2021-06-15 | 中国科学院兰州化学物理研究所 | Preparation method of chromium oxide wide-temperature-range self-lubricating self-repairing coating |
-
2002
- 2002-12-06 CN CN 02144707 patent/CN1208498C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101307424B (en) * | 2007-05-16 | 2011-02-02 | 中国科学院金属研究所 | Process for preparing zirconia coating |
| CN100564266C (en) * | 2007-10-23 | 2009-12-02 | 南京大学 | The method of producing low pressure gas-phase of ferromagnetism chromium oxide compound nano-grain film |
| CN101805883B (en) * | 2009-02-13 | 2012-06-06 | 比亚迪股份有限公司 | Film plating plate and preparation method thereof |
| CN104278234A (en) * | 2013-07-02 | 2015-01-14 | 中国科学院兰州化学物理研究所 | Preparation technology for self-lubricating coating with wide temperature range of room temperature to 800 DEG C |
| CN111334769A (en) * | 2020-04-02 | 2020-06-26 | 中国科学院宁波材料技术与工程研究所 | PbO-Cr2O3Co-doped film and preparation method and application thereof |
| CN112048702A (en) * | 2020-09-10 | 2020-12-08 | 中国航发沈阳黎明航空发动机有限责任公司 | Preparation method of coating for aeroengine parts |
| CN112048702B (en) * | 2020-09-10 | 2022-07-01 | 中国航发沈阳黎明航空发动机有限责任公司 | Preparation method of coating for aeroengine parts |
| CN112962066A (en) * | 2021-02-04 | 2021-06-15 | 中国科学院兰州化学物理研究所 | Preparation method of chromium oxide wide-temperature-range self-lubricating self-repairing coating |
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| Publication number | Publication date |
|---|---|
| CN1208498C (en) | 2005-06-29 |
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