CN101805883B - Film plating plate and preparation method thereof - Google Patents
Film plating plate and preparation method thereof Download PDFInfo
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- CN101805883B CN101805883B CN2009101053931A CN200910105393A CN101805883B CN 101805883 B CN101805883 B CN 101805883B CN 2009101053931 A CN2009101053931 A CN 2009101053931A CN 200910105393 A CN200910105393 A CN 200910105393A CN 101805883 B CN101805883 B CN 101805883B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000007747 plating Methods 0.000 title abstract description 30
- 239000002245 particle Substances 0.000 claims abstract description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 42
- 238000010438 heat treatment Methods 0.000 claims description 35
- 238000007738 vacuum evaporation Methods 0.000 claims description 21
- 238000007740 vapor deposition Methods 0.000 claims description 18
- 230000005540 biological transmission Effects 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract description 34
- 238000012360 testing method Methods 0.000 abstract description 12
- 238000001704 evaporation Methods 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 230000005855 radiation Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 78
- 239000011651 chromium Substances 0.000 description 31
- 238000000576 coating method Methods 0.000 description 20
- 239000000047 product Substances 0.000 description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 13
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004417 polycarbonate Substances 0.000 description 6
- 229920000515 polycarbonate Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Abstract
The invention discloses a film plating plate and a preparation method thereof. A film is formed on a baseplate by adopting a vacuum evaporating process, wherein under the vacuum evaporating condition, Cr particles are heated, fused and simultaneously injected with oxygen and then evaporated onto the baseplate to form a Cr2O3 film. According to the preparation method of the film plating plate, the Cr2O3 plating film with metal texture is formed on the baseplate, thereby being capable of promoting the product value; and especially, when the product is used as a window of a mobilephone, the Cr2O3 film is plated on the baseplate, therefore, not only the window of the mobilephone can be ensured to obtain the metal texture, but also an electromagnetic protection film layer is plated on the window of the mobilephone so as to reduce the damages to the human body from electromagnetic wave radiation of the mobilephone. Meanwhile, the film plating plate has good insulation property, namely, nonconductive property, a cross-cut tape test proves that the adhesion force between the plating film and the baseplate is more than 5B, and the plating film is very even; and in addition, the preparation method of the film plating plate is simple and convenient to operate.
Description
[technical field]
The present invention relates to the preparation method of a kind of plated film plate and plated film plate.
[background technology]
The plate of plated film for example sheet glass or polycarbonate (PC) plate can be used for all respects usually, for example the form of various electronic products, vehicle glass etc.During in particular for the form of mobile phone, hope to obtain better texture, to promote the value of mobile phone products.Common film coating method is to adopt physical vapor deposition, for example vacuum vapour deposition and sputtering method metal lining film on substrate.Vacuum vapour deposition is a kind of coating technology commonly used, is used for metallic membranes such as plating gold and silver, copper, tin, aluminium, chromium, nickel on metal, glass or plastic base.If but on substrate the metal lining film, this metallic membrane can intercept or the communication signals of interference handset product, causes the bad defective of speech quality.Therefore, need seek the preparation method of the nonmetal lamina membranacea of vapor deposition, i.e. the preparation method of non-conductive film.
The application of non-conductive film is specially adapted to the 3C Product of signal receiving/transmission, especially at the antenna cover near zone, like mobile telephone, PDA(Personal Digital Assistant), Smart Phone, satellite-navigation (GPS), bluetooth earphone.Because the non-conductive property of non-conductive film; When mobile telephone or bluetooth earphone are receiving or during the emission signal, the coating that the EM field of generation is not conducted electricity is hoarded, thereby does not influence the radio-frequency performance and the electrostatic discharge performance of mobile phone; Make wireless product reach better transmission reception: no noise; More can not produce any influence to human body, from the electrical property angle, it can be through conductive test and electronic jamming test.
When the casing of communication product adopted non-conductive film to make, the Anneta module of product did not need to design ground return circuit to the machine plate again, can save the detection on Anneta module thus, and saved cost; The outward appearance metal-like of product is stronger simultaneously, and then improves the scientific and technological content of product, increases the value added of product.
Non-conductive in addition film can be realized semi-transparency control when making plastics have metal-like; Promptly embody metal-like and possess the light penetrability simultaneously, when product case adopts non-conductive film to make, utilize printing opacity or semi-transparent characteristic; Can make richer variation of design of product, outward appearance adds beautiful.
Disclose a kind of vacuum evaporation equipment, method and finished product at substrate surface formation laser pattern among the CN1974235A, this method may further comprise the steps: (a) base material is placed in the vacuum evaporation equipment, carries out the vapor deposition operation; (b) carry out multiple vapor deposition with vapor deposition source, form coatings on above-mentioned base material one surface; (c) lay design layer on another surface of above-mentioned base material; (d) at above-mentioned base material coatings print color layer.Said base material is polycarbonate or acryl material; Said vapor deposition source is silicon oxide and titanium oxide, with multiple vapor deposition it is coated on substrate surface and forms coatings, and said silicon oxide and titanium oxide are given coating with order and the thickness set.Adopt method that this patented claim provides to plate coatings at substrate surface, can protect base material, and reflect on coatings through light and can form gorgeous laser pattern effect with the mode of vapor deposition.But the method operation of adopting this patented claim to provide is comparatively complicated, and can not on base material, obtain having the plating film of metal-like.
[summary of the invention]
Technical problem to be solved by this invention provides a kind of preparation method of plated film plate simple to operate, solves complicated operation in the prior art, and can not on base material, obtain the problem of the plating film of metal-like.
The present invention realizes through following technical scheme:
A kind of preparation method of plated film plate; Adopt vacuum evaporation process on substrate, to form film, wherein, under the condition of vacuum evaporation; In the time of with Cr particle heating and melting and after charging into oxygen; Be evaporated to and form the Cr2O3 film on the said substrate, said mode with Cr particle heating and melting is a resistive heating, comprises being to heat 12-18 second under the 120mA-150mA at electric current earlier; When said Cr particle is carried out fritting and charge into oxygen, and then under the electric current required to the electric current of 210mA greater than fritting heating 6-12 second.
The present invention also provides a kind of plated film plate, and this plated film plate comprises substrate and attached to the film on the said substrate, the said film that on substrate, forms is the Cr2O3 film.
In the present invention, through on substrate, having formed the Cr2O3 plating film of metal-like, thereby can promote the value of product.Especially when product of the present invention is used as the form of mobile phone; On substrate plating the Cr2O3 film; Both can make the form of mobile phone obtain metal-like, and can make the form plating of mobile phone that the electromagnetic protection rete is arranged again, to reduce the harm of mobile phone electromagnetic wave radiation human body.Simultaneously, the insulativity of the plate of plated film provided by the invention is that non-conductive performance is fine, and the sticking power of testing plated film and substrate through hundred lattice is more than the 5B, and plated film is very even, and the preparation method of the plate of plated film provided by the invention is simple, convenient.
Characteristic of the present invention and advantage will combine accompanying drawing to be elaborated through embodiment.
[embodiment]
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Comprise that according to preparation method provided by the invention the employing vacuum evaporation process forms film on substrate; Said on substrate the film forming method of shape do; Under the condition of vacuum evaporation; In the time of with Cr particle heating and melting and after charging into oxygen, be evaporated on the said substrate and form film, the said film that on substrate, forms is the Cr2O3 film.The said flow that charges into oxygen is 15-20 standard state ml/min (Standard Cubic Centimeter per Minute is called for short SCCM).
Preparing method according to plated film plate provided by the invention; Said substrate can be various substrates, for example is in polycarbonate (PC) plate, sheet glass, nylon (NYLON) plate, polymethylmethacrylate (PMMA) plate, acrylonitrile-butadiene-styrene (ABS) polymkeric substance (ABS) plate any.Thickness to said substrate does not have special qualification, can look concrete purposes and select, and for example, when said plated film plate was used as the form of mobile phone, the thickness of said substrate can be 0.8-1.2mm.
According to preparation method provided by the invention, under preferable case, it is 60-65% that said Cr particulate consumption makes the light transmission rate of said Cr2O3 film, and the vapor deposition thickness of said Cr2O3 film is 22nm-26nm.Contriver of the present invention finds through experiment, and the substrate that vapor deposition is every square centimeter uses 1.731e
-4-2.307e
-4The Cr particle of gram can obtain the film that light transmission rate is 60-65%.Generally, adopting the plated film cavity diameter is the vacuum evaporation plating machine of 1350cm when carrying out vapor deposition, and the required Cr particulate amount of using restrains as 1.5-2.0.
Usually, when carrying out vacuum evaporation, adopt three kinds of heating sources usually, promptly resistive heating source, electron beam heating and induction heating source are used for heating and evaporation deposition material.The induction heating source is mainly used in extensive coating instrument, because because high-frequency use, it tends to use complicated peripherals.Because electron beam heating can evaporate the material of almost all kinds, so it is widely used in main equipment, also is used for the manufacturing of experimental thin films.Characteristics such as install simply owing to having in the resistive heating source, low price are used for various fields.
In the present invention, during as deposition material, both can adopt the resistive heating source to heat the Cr particle, and also can adopt electron beam heating to heat, and preferably adopt the resistive heating source to heat.
According to preparation method provided by the invention, under preferable case, said mode with Cr particle heating and melting is a resistive heating, and the electric current of said resistive heating is 120-210mA.
According to preparation method provided by the invention; Under preferable case; Said mode with Cr particle heating and melting comprises being to heat 12-18 second under the 120-150mA at electric current earlier; When said Cr particle is carried out fritting and charge into oxygen, the said flow that charges into oxygen is 15-20SCCM, and then under the electric current required to the electric current of 210mA greater than fritting heating 6-12 second.The purpose of fritting is that the Cr particle is slowly heated, and splash takes place when preventing the evaporation of Cr particle fusion, so that product appearance is produced detrimentally affect, causes the non-conductive performance or the homogeneity variation of formed Cr2O3 film, influences the quality of plated film.A preferred embodiment of the invention, the evaporate process of this substrate is carried out in full-automatic vacuum evaporation plating machine, and concrete operation steps is following:
1. the Cr particle is contained in the tungsten boat as deposition material, tungsten boat two ends are connected with the positive and negative electrode of the interior electrode of Vakuumkammer of vacuum evaporation plating machine; The vapor deposition pot that substrate is housed is put on the work rest of Vakuumkammer, then Vakuumkammer is carried out robotization and vacuumize;
2. work as the indoor vacuum pressure of vacuum and reach 1 * 10
-2-1.5 * 10
-2During Pa; Coating system can be connected the electric current in thermal resistance evaporation source automatically; Electric current can rise to 120-150mA gradually, keeps 12-18 second, in the time of to the heating of the Cr particle in tungsten boat fritting and charge into oxygen; The said flow that charges into oxygen is 15-20SCCM, makes the vacuum pressure in the Vakuumkammer keep 1.5 * 10
-2-2.0 * 10
-2Pa.
3. rise to once more when melting required electric current to the electric current of 210mA in advance when electric current, keep 6-12 second, when making the complete fusion of Cr particle in the tungsten boat, open baffle plate immediately and begin vapor deposition, the velocity of evaporation of monitoring Cr with the crystal oscillator film thickness gauge remained on for 0.1 dust/second.Cr molecule and oxygen molecule react, and under the effect of saturated vapor pressure, vapor deposition forms film to substrate surface at substrate surface.
Under the preferable case, ion cleans and the internal stress of reduction rete for substrate is carried out, and to improve the compactness and the sticking power of rete, when the Cr particle is carried out fritting and before charging into oxygen, uses ion source (such as argon gas) to clean 3-5 minute.Said ion cleans and can directly on the used full-automatic vacuum plating unit of said vacuum evaporation, carry out, and further reaches 1.0 * 10 from vacuumizing the vacuum pressure that begins to the Vakuumkammer
-2Carry out before the Pa.
The present invention also provides a kind of plated film plate, and this plated film plate comprises substrate and attached to the film on the said substrate, the said film that on substrate, forms is the Cr2O3 film.
In the present invention, on substrate, formed the Cr2O3 plating film of metal-like through adopting vacuum evaporation process, thereby can promote the value of product.Especially when product of the present invention is used as the form of mobile phone; On substrate plating the Cr2O3 film; Both can make the form of mobile phone obtain metal-like, and can make the form plating of mobile phone that the electromagnetic protection rete is arranged again, to reduce the harm of mobile phone electromagnetic wave radiation human body.Simultaneously, the insulativity of the plate of plated film provided by the invention is that non-conductive performance is fine, and the sticking power of testing plated film and substrate through hundred lattice is more than the 5B, and plated film is very even, and the preparation method of the plate of plated film provided by the invention is simple, convenient.
Further, in described preparation method, the deposition material of employing is the Cr particle, and its low price and consumption are few, and promptly the substrate of every square centimeter of vapor deposition uses 1.731e
-4-2.307e
-4The Cr particle of gram gets final product, and makes cost cheaper; Charge into behind the oxygen non-conductive performance more by force, more stable.
Adopt the mode of embodiment that the present invention is described in further detail below.
Embodiment 1
Vacuum evaporation plating machine adopts the full-automatic box type vacuum evaporator of HVC-1350DH of Korea S
Adopting the sheet glass of 37.20 * 52.95mm is substrate, 440 of batch processings
1, adopt the big sono-cleaner that reaches of Shenzhen section to clean above-mentioned sheet glass, the above-mentioned sheet glass that will clean up then is installed on the clip of vapor deposition pot, puts on the work rest of Vakuumkammer, and the work rest speed setting is 15rpm;
The Cr particle of 2.0g is put into the tungsten boat, and tungsten boat two ends are connected with the positive and negative electrode of the interior electrode of Vakuumkammer of vacuum evaporation plating machine; Set the coating process parameter, use full-automatic coating system that Vakuumkammer is vacuumized then.
2, reach 1.0 * 10 when the indoor vacuum tightness of vacuum
-2During Pa, coating system injects argon gas automatically, carries out ion and cleans, and argon flow amount is 20sccm, and the ion scavenging period is 3 minutes, makes the vacuum tightness in the Vakuumkammer remain on 2.0 * 10 simultaneously
-2Pa.
3, cleaning finishes, and coating system begins plated film automatically, and the electric current in resistive heating source can rise to 120A automatically gradually; Kept 12 seconds; In the time of to the Cr particle in tungsten boat heating fritting and charge into oxygen, the said flow that charges into oxygen is 20SCCM, makes vacuum pressure remain on 2.0 * 10
-2Pa.
4, when the electric current in resistive heating source rises to the electric current of 150mA once more, keep after 6 seconds, the automatic start vaporizer of baffle plate meeting, Cr particulate velocity of evaporation remains on per second 0.1 dust, and when thickness reached 22nm, system can close baffle plate automatically, finished plated film.
Finally obtaining plating has the plate of the plated film of Cr2O3 film, and this plated film has metal-like, and has reflecting effect.
Embodiment 2
Vacuum evaporation plating machine adopts the full-automatic box type vacuum evaporator of HVC-1350DH of Korea S
Adopting polycarbonate (PC) plate of 120 * 190mm is substrate, 39 of batch processings
1, adopt the big sono-cleaner that reaches of Shenzhen section to clean above-mentioned PC plate, the above-mentioned PC plate that will clean up then is attached to the bottom of vapor deposition pot with high-temperature plastic, puts on the work rest of Vakuumkammer, and the work rest speed setting is 20rpm;
The Cr particle of 2.0g is put into the tungsten boat, and tungsten boat two ends are connected with the positive and negative electrode of the interior electrode of Vakuumkammer of vacuum evaporation plating machine; Set the coating process parameter, then Vakuumkammer is vacuumized.
2, reach 1.0 * 10 when the indoor vacuum tightness of vacuum
-2During Pa, coating system injects argon gas automatically, carries out ion and cleans, and argon flow amount is 15sccm, and the ion scavenging period is 4 minutes, makes the vacuum tightness in the Vakuumkammer remain on 1.5 * 10 simultaneously
-2Pa.
3, cleaning finishes, and coating system begins plated film automatically, and the electric current in resistive heating source can rise to 130A automatically gradually; Kept 15 seconds; In the time of to the Cr particle in tungsten boat heating fritting and charge into oxygen, the said flow that charges into oxygen is 20SCCM, makes vacuum pressure remain on 2.0 * 10
-2Pa.
4, when the electric current in resistive heating source rises to the electric current of 180mA, keep after 9 seconds, the automatic start vaporizer of baffle plate meeting, Cr particulate velocity of evaporation remains on per second 0.1 dust, and when thickness reached 24nm, system can close baffle plate automatically, finished plated film.
Finally obtaining plating has the plate of the plated film of Cr2O3 film, and this plated film has metal-like, and has reflecting effect.
Embodiment 3
Vacuum evaporation plating machine adopts the full-automatic box type vacuum evaporator of HVC-1350DH of Korea S
Adopting polymethylmethacrylate (PMMA) plate of 120 * 190mm is substrate, 39 of batch processings
1, adopt the big sono-cleaner that reaches of Shenzhen section to clean above-mentioned PMMA plate, the above-mentioned PMMA plate that will clean up then is attached to the bottom of vapor deposition pot with high-temperature plastic, puts on the work rest of Vakuumkammer, and the work rest speed setting is 20rpm;
The Cr particle of 2.0g is put into the tungsten boat, and tungsten boat two ends are connected with the positive and negative electrode of the interior electrode of Vakuumkammer of vacuum evaporation plating machine; Set the coating process parameter, then Vakuumkammer is vacuumized.
2, reach 1.0 * 10 when the indoor vacuum tightness of vacuum
-2During Pa, coating system injects argon gas automatically, carries out ion and cleans, and argon flow amount is 15sccm, and the ion scavenging period is 5 minutes, makes the vacuum tightness in the Vakuumkammer remain on 1.8 * 10 simultaneously
-2Pa.
3, cleaning finishes, and coating system begins plated film automatically, and the electric current in resistive heating source can rise to 150A automatically gradually; Kept 18 seconds; In the time of to the Cr particle in tungsten boat heating fritting and charge into oxygen, the said flow that charges into oxygen is 20SCCM, and vacuum pressure remains on 2.0 * 10
-2Pa.
4, when the electric current in resistive heating source rises to the electric current of 210mA, keep after 12 seconds, the automatic start vaporizer of baffle plate meeting, Cr particulate velocity of evaporation remains on per second 0.1 dust, and when thickness reached 26nm, system can close baffle plate automatically, finished plated film.
Finally obtaining plating has the plate of the plated film of Cr2O3 film, and this plated film has metal-like, and has reflecting effect.
Performance test
1, test surfaces resistance
With megohmmeter each on three gears of 250V, 500V and 1000V, the surface resistivity of any point-to-point transmission on the measure sample, surface resistivity more than 400 megaohms for passing through.
2, the sticking power of test plated film
Adopting hundred lattice to test tests.On coated surface, draw 100 1 millimeter * 1 millimeter square lattice with drawing the lattice device.Use Minnesota Mining and Manufacturing Company model is 600 smooth being bonded on the grid of scotch tape, uncovers adhesive tape rapidly with 45 then, uncovers rete 5 times.
As have no to come off and be 5B, the demoulding amount is 4B between 0-5 area %, and the demoulding amount is 3B between 5-15 area %, and the demoulding amount is 2B between 15-35 area %, and the demoulding amount is 1B between 35-65 area %, the demoulding amount is 0B more than 65 area %.
3, the light transmission rate of test plated film
Adopt UNIC WFJ-2100 type visible spectrophotometer, with 546.1nm wavelength measurement light transmission rate.
4, the homogeneity of test plated film
Measure the light transmission rate of 5 points that are evenly distributed on the substrate with UNIC WFJ-2100 type visible spectrophotometer.Tolerance be ± 2% with interior for qualified.
The resulting product of embodiment 1-3 is carried out performance test according to above-mentioned testing method, and resulting result lists in the table 1.
Table 1 please replenish the content in the following table:
Can find out that from the data of resulting product of the foregoing description 1-3 and table 1 the plate insulativity of plated film provided by the invention is that non-conductive performance is fine, the sticking power of plated film and substrate is fine, and plated film is very even.And the plate of plated film provided by the invention has metal-like, and has reflecting effect, and the preparation method is simple, convenient simultaneously.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the preparation method of a plated film plate adopts vacuum evaporation process on substrate, to form film, it is characterized in that, under the condition of vacuum evaporation, in the time of with Cr particle heating and melting and after charging into oxygen, is evaporated on the said substrate and forms Cr
2O
3Film; Said mode with Cr particle heating and melting is a resistive heating; Comprise that earlier at electric current be heating 12-18 second 120mA-150mA under, when said Cr particle is carried out fritting and charge into oxygen, and then under the electric current required to the electric current of 210mA, heat 6-12 second greater than fritting; Based on every square centimeter substrate, employed Cr particulate amount is 1.731e
-4-2.307e
-4Gram.
2. the preparation method of plated film plate according to claim 1 is characterized in that, when the Cr particle is carried out fritting and before charging into oxygen, uses ion source to clean 3-5 minute.
3. the preparation method of plated film plate according to claim 1 is characterized in that the said flow that charges into oxygen is 15-20SCCM.
4. the preparation method of plated film plate according to claim 1 is characterized in that the vacuum pressure of said vacuum evaporation is 1.5 * 10
-2-2.0 * 10
-2Pa.
5. the preparation method of plated film plate according to claim 1 is characterized in that said Cr
2O
3The vapor deposition thickness of film is 22nm-26nm.
6. the preparation method of plated film plate according to claim 1 is characterized in that said Cr
2O
3The light transmission rate of film is 60-65%.
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| CN101805883B true CN101805883B (en) | 2012-06-06 |
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| CN102867613A (en) * | 2011-07-05 | 2013-01-09 | 中国科学院金属研究所 | High temperature oxidation-resistant permanent magnet and preparation method |
| CN103707571B (en) * | 2013-12-18 | 2016-01-27 | 东莞劲胜精密组件股份有限公司 | A kind of manufacture method of metal-like face glass |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392286A (en) * | 2002-07-13 | 2003-01-22 | 华中科技大学 | Process for prapring vanadium oxide film |
| CN1506492A (en) * | 2002-12-06 | 2004-06-23 | 中国科学院金属研究所 | Chromium oxide coating preparing process |
| CN1904137A (en) * | 2006-08-03 | 2007-01-31 | 中山大学 | Quasi-mono-dimension nano-structure of low sublimation temperature high deposition temperature metallic oxide and its thin film preparation method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392286A (en) * | 2002-07-13 | 2003-01-22 | 华中科技大学 | Process for prapring vanadium oxide film |
| CN1506492A (en) * | 2002-12-06 | 2004-06-23 | 中国科学院金属研究所 | Chromium oxide coating preparing process |
| CN1904137A (en) * | 2006-08-03 | 2007-01-31 | 中山大学 | Quasi-mono-dimension nano-structure of low sublimation temperature high deposition temperature metallic oxide and its thin film preparation method |
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