CN1493429A - Flash second multiple frequency laser direct writing system and microprocessing method - Google Patents
Flash second multiple frequency laser direct writing system and microprocessing method Download PDFInfo
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Abstract
A FS frequency-doubled laser direct writing system is composed of mode-locking Ti jade laser, reflector, focusing lens, high-precision 2D moving platform and computer. In the light channel between laser and reflector there are focusing lens, frequency-doubling BBO crystal, focusing lens and optical filter for making the output light beam irradiate on the photoresist coated on the surface of specimen to be processed on said platform. Its microprocessing method features that the low-power FS frequency-double laser is used for directly writing and the photoetching is combined for microprocessing. Its advantages are simple structure, high resolution, and low cost.
Description
Technical field:
The present invention relates to Laser Micro-Machining, particularly relate to the micro-machined femtosecond double-frequency laser straight-writing system that is used for micro optical element and microelectronics photoetching metal form and carry out micro-machined method.
Background technology:
The develop rapidly of microelectric technique, improving constantly of photoelectron product integrated level needs the characteristic size of opto-electronic device further to dwindle.In order to satisfy and to adapt to the development that microelectronics, photoelectron, integrated optics and photoelectricity mix technology such as integrated, the element micro-processing technology must further be developed and be improved, can obtain more high accuracy, higher-quality little delicate elements, process the more and more littler assembly of elements of size.Yet along with constantly dwindling of figure live width, the resolution capability of element micro-machining system more and more is subjected to the influence of proximity effect.
Laser direct-writing is a kind of processing method of emerging making micro optical element, in 20th century the mid-80 be suggested.So-called laser direct-writing is exactly by computer control high accuracy focussed laser beam, according to design configuration scan exposure on photoresist, form required photoresist pattern by the back of developing, just combine with lithographic technique and can on the surface of optical element, process various complex surfaces embossing patterns.The laser direct-writing technology is because of its once-forming, and the device that the diffraction efficiency of device and making ratio of precision conventional semiconductor processing alignment are made all improves a lot.Compare with traditional plate-making technology, laser direct writing system has stable performance, simple in structure, advantage such as machining accuracy is high, cost is lower, thereby especially noticeable.
The lateral resolution of the element that laser direct-writing obtains and minimum feature size are by the laser spot size decision after focusing on.If ignore position error, the Gaussian laser beam minimum hot spot that can be focused has been determined resolution so, and it is determined by following formula:
D0 is the spot diameter at 1/e2 maximum intensity place in the formula; NA is the numerical aperture of image-forming objective lens; D is the spot diameter at 1/e maximum intensity place; λ directly writes the laser work wavelength.
At present the laser direct-writing technology has been used to make Fresnel lens, has ceased the device of various continuous surface profiles such as holographic element mutually, and is comparatively common and development is comparatively ripe is to adopt helium-cadmium gas laser as directly writing light source.Want to improve element lateral resolution, obtain littler component feature size, analysis according to (1) formula just must be shortened the laser work wavelength, thereby occurred short wavelength light sources such as chlorination xenon (308nm), KrF (248nm), argon fluoride (193nm), fluorine gas (157nm) LASER Light Source afterwards, and obtained deep research.
Formerly the He-Cd LASER Light Source that laser direct writing system is adopted in the technology [1] is (referring to Michael T.Gale, Graham K.Lang, Jeffrey M.Raynor and Helmut Schutz, " Fabrication ofmicrooptical components by laser beam writing in photoresist; " SPIE.1506:65～70 (1991)) wavelength is output as 442nm, utilize 50 * object lens obtain the meeting focus point that diameter (D) is about 1.5 μ m.The shortcoming of this technology is that optical source wavelength is longer, and according to (1) formula, the resolution of gained element is low as can be known, characteristic size is bigger, when the characteristic size of processing lines during less than 1 μ m, significantly contiguous distortion occurs.
Along with the raising of laser power, the laser ablation direct writing technology has also obtained further development.The KrF of the middle use of technology [2] formerly excimer laser (λ=248nm), with the method for the reconstruction of hologram on the polyimides rete, ablate obtain the about 40nm of the degree of depth, live width＜100nm grating (referring to Harvey M.Phillips, Roland A.Sauerbrey, " Excimer-laser-produced nanostructures inpolymers; " Opt.Eng.32,2424-2436 (1993)).Because operation wavelength is shorter, can access less spot diameter as can be known according to (1) formula, thereby obtain littler element characteristics size, but the shortcoming of this technology is light source coherence difference and costs an arm and a leg, processing also has higher requirements to light source power, must reach the ablation threshold of processed material.The argon fluoride of Chu Xianing (193nm), fluorine gas (157nm) LASER Light Source etc. also had above-mentioned same shortcoming afterwards.
From the nineties in 20th century, femto-second laser begins to be applied to manufacture field.Because the high impulse power density of femtosecond laser has unique advantages in laser fine processing.After the titanium sapphire femto-second laser was succeeded in developing, the various countries scholar ablated at femtosecond laser, promptly utilized its very high pulse power density and matter interaction to reach this field of ablation purpose and had carried out number of research projects.Formerly utilizing the frequency doubled light (400nm) of titanium sapphire femtosecond laser (wavelength 800nm) to carry out laser ablation in the technology [3], to have obtained characteristic size be that the mask of 0.6 μ m is (referring to K.Venkatakrishnan, B.K.A.Ngoi, P.Stanley, L.E.N.Lim, B.Tan, N.R.Sivakumar, " Laser writingtechniques for photomask fabrication using a femtosecond laser; " Appl.Phys.A74,493-496 (2002)).In this technology, as absorbed layer, high-power femtosecond laser obtains mask to its processing of directly ablating with gold-chromium metal level.Femtosecond laser is ablated when requiring energy density to reach certain value equally, just has ablation phenomen and occurs; And because of processing obscure boundary Chu, shortcoming such as inner inhomogeneous and be not suitable for the processing of binary optical elements.
Photoresist is one of most important sacrificial layer material in the microelectronic industry.Photoresist is by exposure, the meticulous pattern of formation that develops, and behind the material figure that generation or etching are new in the substrate, photoresist can obtain desired optical element again by flush away.So to say that whole microelectronic process engineering all is to be based upon on the basis of photoresist process technology, and the micro-optic technology also is to be based upon on the technology of photoresist.Have only compatiblely mutually, just may in microelectronic industry and micro-optic manufacture field, play important effect and be used widely with the photoresist process technology.
Femtosecond laser shows great potential aspect microfabrication, cause people's extensive concern.The titanium jewel fs-laser system in conjunction with amplifying technique is generally adopted in the work that past people is carried out this respect, has high power laser light output, and the advantage of utilizing femtosecond laser to have high power density is ablated to material and reached the purpose of materials processing.As far as we know, at present also nobody attempt the low-power femtosecond laser is realized microfabrication by frequency doubling technology to resist exposure.
Summary of the invention:
The technical problem to be solved in the present invention is to overcome above-mentioned the deficiencies in the prior art, a kind of low-power femtosecond double-frequency laser straight-writing system is provided and carries out micro-machined method, this system is simple structure, low, the stable performance of cost not only, and the edge clear of photoetching, resolution height.
Technical solution of the present invention is as follows:
A kind of femtosecond double-frequency laser straight-writing system, comprise laser, speculum, condenser lens, high-precision two-dimensional mobile platform and computer, it is characterized in that described laser is a titanium jewel mode-locked laser, also be provided with condenser lens, BBO frequency-doubling crystal, condenser lens, filter on the light path between the lasers and mirrors, this filter only allows frequency doubled light be radiated at the photoresist of the sample surfaces coating to be processed of high-precision two-dimensional mobile platform along light path output.
Described titanium jewel mode-locked laser is exported and the laser behind the BBO frequency-doubling crystal is the femtosecond double-frequency laser, and wavelength is 400nm.
Utilize the method for described femtosecond double-frequency laser straight-writing system processing micro optical element, it is characterized in that comprising the following steps:
1.. coating one deck photoresist in the substrate of glass or quartzy or other transparent materials,, sample promptly to be processed also places on the high-precision two-dimensional mobile platform;
2.. under the control of computer, mobile high-precision two-dimensional mobile platform makes the femtosecond double-frequency laser treat processed sample and directly writes;
3.. the back of developing forms the photoresist pattern;
4.. evaporation one layer pattern or etch corresponding pattern in the substrate of sample to be processed;
5.. the flush away photoresist just can obtain the components and parts of micro-optical surface processing.
Utilize the method for described femtosecond double-frequency laser straight-writing system processing metal chrome mask plate, it is characterized in that comprising the following steps:
1.. the surface coated one deck photoresist at suprabasil metallic chromium layer is placed on the high-precision two-dimensional mobile platform;
2.. under the control of computer, mobile high-precision two-dimensional mobile platform, and the luminous processed sample for the treatment of of control femtosecond frequency double laser is directly write;
3.. the back of developing forms the photoresist pattern;
4.. by the crome metal that corrosion is come out, the flush away photoresist can produce the crome metal template then.
A kind of femtosecond double-frequency laser straight-writing system.Form by titanium jewel femto-second laser, microcobjective, BBO frequency-doubling crystal, filter and computer-controlled two-dimentional mobile platform etc.Low-power (about the 150mW) femtosecond laser (about 800nm) that is produced by titanium jewel femto-second laser is through frequency doubled light (about 400nm) that bbo crystal produces just in time in the sensitive volume at photoresist, therefore just can produce required exposing patterns (after development, photographic fixing) on the coating of photoresist by moving of two-dimentional mobile platform, by the etching technics of microelectronic technique, just can process the micro optical element and the metal mask plate of arbitrary shape then.This straight-writing system combines femtosecond laser frequency doubling technology and microelectronic process engineering, has proposed a kind of new method of processing microelectronics mask plate and micro optical element.
The most basic reason of utilizing the femtosecond laser frequency doubling technology to process microelectronics template and micro optical element is to make full use of the sensitive volume of photoresist.Be widely used in the photoresist of microelectronics and micro-optic technology, its sensitive volume is insensitive generally at ultraviolet region to ruddiness (for example ruddiness of 800nm).Laser (400nm) after the titanium jewel femtosecond laser frequency multiplication is just in time within the sensitive volume of photoresist, therefore the femtosecond double-frequency laser can be used for processing microelectronics template and micro optical element, the place of the core innovative point of this femtosecond double-frequency laser straight-writing system of the present invention just.Native system need not to adopt the laser amplification device of complex and expensive and directly adopts the low-power femtosecond laser of titanium precious stone laser oscillator output just can realize, thereby can cut down finished cost greatly.
Utilize femtosecond laser to process in addition, compare with the Speed of diffusion of material, can inject energy faster at the laser radiation position, the energy of laser irradiation region deposit is difficult to the approach effusion irradiation zone by thermal diffusion, the energy of irradiation is not at the irradiation area external loss, the scope of laser and matter interaction is limited by strictness, thereby is utilized effectively, and obtains under the littler figure live width prerequisite of assurance than using the higher-quality processing of common laser edge.This system has made full use of the advantage that femtosecond laser can overcome nearly territory influence of thermal effect in the photoetching effectively, can process the photoengraving pattern than small scale; Adopt the photoetching process of photoresist simultaneously, can realize the border of sharp keen photoengraving pattern clearly, be convenient to the microelectronic component and the micro-optical device of machining high-precision.
Compare with technology formerly, the advantage of this invention is: (1) femtosecond double-frequency laser (400nm) is just in time at the sensitive volume of photoresist, thereby this technology can be used widely in the technology of microelectronics and micro-optic; (2) the various advantages of performance femtosecond laser parallel micromachining effectively overcome the proximity effect in the optical exposure process, reduce the minimum image size greatly, improve the processing edge quality; (3) used operation wavelength is shorter, helps obtaining high-resolution machine component; (4) because used light-source system need not amplify, greatly reduce system cost, systematic function is stable in addition, is suitable for processing microelectronics template and micro optical element.
Description of drawings:
Fig. 1 is the installation drawing of this invention.Wherein 1 is titanium jewel mode-locked laser; 2,4,7 is respectively microcobjective L1, L2, L3; The 3rd, the bbo crystal that is complementary with relevant parameters such as laser wavelengths; The 5th, the filter that frequency doubled light and fundamental frequency light are separated; The 6th, speculum; The 8th, the surface scribbles the sample to be processed of photoresist; The 9th, the high-precision two-dimensional mobile platform; The 10th, be used for handling 9 computer.
Fig. 2 (a) is that the femtosecond double-frequency laser is directly write making micro optical element schematic diagram.Wherein 7 is convergent lenses; 8a is a photoresist; The 8th, substrate (glass or quartz).(b) be that the femtosecond double-frequency laser is directly write making crome metal mask plate schematic diagram.Wherein 7 is convergent lenses; 8b is a crome metal.
Fig. 3 is the simple and easy flow chart of processing that utilizes femtosecond double-frequency laser straight-writing system processing micro optical element and crome metal mask plate.
Fig. 4 utilizes the femtosecond laser frequency doubling technology to process the light microscope picture of the crome metal mask plate that obtains.
Fig. 5 obtains two step phase gratings in the processing of substrate of glass upper surface etching, the result that the surface etch pattern is measured by Taylor-Hobson step instrument.Its surface etch degree of depth is 0.7 μ m, and the etching width is 15 μ m, and the grating cycle is 124 μ m.
Embodiment:
Femtosecond double-frequency laser direct-writing device of the present invention, the device schematic diagram as shown in Figure 1.Wherein titanium jewel femto-second laser centre wavelength is about 800nm, and power output is about 150mW, and pulse duration is 20fs～50fs, and repetition rate is 80MHz; Multiplication factor/numerical aperture of microcobjective L12, L24, L37 is respectively 10 */0.25,4 */0.1,40 */0.65; The bbo crystal 5 of matching angle θ=29.60, size are 5 * 5 * 0.4mm3; The MM-3M-F-1.5-GR256 type mobile platform 9 of the programming Control that uses a computer, 0.1 micron of its mobile accuracy.
Fig. 2 utilizes femtosecond double-frequency laser straight-writing system processing micro optical element of the present invention and micro-electronics metal chrome mask plate schematic diagram.Fig. 2 (a) is for to utilize the femtosecond double-frequency laser directly to process micro optical element: the substrate of transparent materials such as glass or quartz coating last layer photoresist, through the femtosecond double-frequency laser directly write and develop after just formed the pattern of photoresist; Just can evaporation one layer pattern on optical substrate or etch corresponding pattern; The flush away photoresist just obtains the components and parts of micro-optical surface processing.Fig. 2 (b) utilizes the template of femtosecond double-frequency laser processing metal chromium.We know, in the massive duplication technology of microelectronics and micro-optic, the template of crome metal is one of at present the most frequently used metal form, crome metal top usually with photoresist as the sacrifice layer of photo etched mask.After the femtosecond double-frequency laser makes resist exposure, just can produce the crome metal template by the crome metal that corrosion comes out.Utilize chrome mask just can realize the low cost batch process of microelectronics and micro optical element.
Fig. 3 has provided this technological process simple diagram.Utilize this femtosecond double-frequency laser straight-writing system, select the suitable power output and the translational speed of two-dimentional mobile platform, with the accurate exposure of control photoresist; Directly writing of obtaining obtains photoengraving pattern after pattern passes through development, photographic fixing; Photoengraving pattern is carried out after the etching photoresist flush away just can being obtained micro optical element.If processing metal chrome mask plate, the crome metal that then needs corrosion earlier to expose after obtaining photoengraving pattern then with the photoresist flush away, can obtain the crome metal mask plate.
When the LASER Light Source power output is 110mW, we successfully utilize this straight-writing system to process multiple optical element and mask plate figure, utilize method shown in Fig. 2 (a) and the technological process of Fig. 3, we successfully process various mask plates, Figure 4 shows that opening is was the chrome mask plate of 248 μ m in 85 μ m cycles, as can be seen from the figure the processing border of this template is sharp keen clear, and the production cycle is the phase grating of 248 μ m in large quantities to utilize this mask plate just can utilize the low-cost reproduction technology of producing in batches of microelectronics and micro optical element as mother matrix; Utilize method shown in Fig. 2 (b) and the technological process of Fig. 3, we process multiple optical element.Obtaining opening in substrate of glass is to be two phase gratings of 124 μ m in 15 μ m cycles, and its surface etch pattern is measured by Taylor-Hobson step instrument, and the result as shown in Figure 5.For clearer observation edges of grating quality, only provide the part of raster pattern among the figure, processing obtains higher grating edge quality as can be seen.
Control moving of two-dimentional mobile platform by corresponding computer programs in addition, we can obtain the almost lithographic pattern of arbitrary shape.These experimental results fully prove utilizes this femtosecond laser frequency multiplication straight-writing system can directly process high-quality micro optical element and crome metal mask plate really.The present invention applies to femtosecond laser in microelectronic technique and the micro-optic processing technology by frequency doubling technology, and device is simple, cost is low, mate fully with photoetching process, and be an important application direction of femtosecond laser, have important application prospects and practical value.
Claims (4)
1, a kind of femtosecond double-frequency laser straight-writing system, comprise laser (1), speculum (6), condenser lens (7), high-precision two-dimensional mobile platform (9) and computer (10), it is characterized in that described laser (1) is a titanium jewel mode-locked laser, also be provided with condenser lens (2), BBO frequency-doubling crystal (3), condenser lens (4), filter (5) on the light path between laser (1) and the speculum (6), this filter (5) only allows frequency doubled light be radiated at the photoresist of sample to be processed (8) surface applied of high-precision two-dimensional mobile platform (9) along light path output.
2, femtosecond double-frequency laser straight-writing system according to claim 1 is characterized in that described titanium jewel mode-locked laser (1) is exported and the laser behind BBO frequency-doubling crystal (3) is the femtosecond double-frequency laser, and wavelength is 400nm.
3, utilize the method for the described femtosecond double-frequency laser of claim 1 straight-writing system processing micro optical element, it is characterized in that comprising the following steps:
1.. coating one deck photoresist in the substrate of glass or quartzy or other transparent materials,, sample promptly to be processed also places on the high-precision two-dimensional mobile platform (9);
2.. under the control of computer (10), mobile high-precision two-dimensional mobile platform (9) makes the femtosecond double-frequency laser treat processed sample (8) and directly writes;
3.. the back of developing forms the photoresist pattern;
4.. evaporation one layer pattern or etch corresponding pattern in the substrate of sample to be processed (8);
5.. the flush away photoresist just can obtain the components and parts of micro-optical surface processing.
4, utilize the method for the described femtosecond double-frequency laser of claim 1 straight-writing system processing metal chrome mask plate, it is characterized in that comprising the following steps:
1.. surface coated one deck photoresist (8a) of crome metal (8b) layer in substrate (8) is placed on the high-precision two-dimensional mobile platform (9);
2.. under the control of computer (10), mobile high-precision two-dimensional mobile platform (9), and the luminous processed sample (8) for the treatment of of control femtosecond frequency double laser is directly write;
3.. the back of developing forms the photoresist pattern;
4.. by the crome metal that corrosion is come out, the flush away photoresist can produce the crome metal template then.
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| CN102005378A (en) * | 2010-09-15 | 2011-04-06 | 中国科学院半导体研究所 | Method for preparing metal-semiconductor contact electrode by femtosecond laser |
| CN102621803A (en) * | 2012-04-13 | 2012-08-01 | 中国科学院光电技术研究所 | Manufacturing method of wedge-shaped super-lens |
| CN102950382A (en) * | 2012-11-15 | 2013-03-06 | 宁波大学 | Laser direct writing etching system for etching electronically-controlled diffraction optical devices, and method thereof |
| CN103201681A (en) * | 2010-10-27 | 2013-07-10 | 原子能和能源替代品委员会 | System for laser direct writing of mesa structures having negatively sloped sidewalls |
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| CN102005378A (en) * | 2010-09-15 | 2011-04-06 | 中国科学院半导体研究所 | Method for preparing metal-semiconductor contact electrode by femtosecond laser |
| CN103201681A (en) * | 2010-10-27 | 2013-07-10 | 原子能和能源替代品委员会 | System for laser direct writing of mesa structures having negatively sloped sidewalls |
| CN102621803A (en) * | 2012-04-13 | 2012-08-01 | 中国科学院光电技术研究所 | Manufacturing method of wedge-shaped super-lens |
| CN102621803B (en) * | 2012-04-13 | 2014-07-09 | 中国科学院光电技术研究所 | Manufacturing method of wedge-shaped super-lens |
| CN102950382A (en) * | 2012-11-15 | 2013-03-06 | 宁波大学 | Laser direct writing etching system for etching electronically-controlled diffraction optical devices, and method thereof |
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| CN108494984B (en) * | 2018-03-13 | 2020-10-09 | 四川大学 | Method for realizing fingerprint extraction by femtosecond laser |
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