CN1490886A - Structure of gallium nitride light emitting diodes and producing method thereof - Google Patents
Structure of gallium nitride light emitting diodes and producing method thereof Download PDFInfo
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Abstract
A Gan light emission diode structure and manufacturing method. First ,provides a base board, then, piles up a Gan semiconductor layer on the base board, the Gan semiconductor piling up layer from bottom to top is: a N type Gan contact layer, a light emission piling up layer and a P type Gan contact layer. Then forms a digital penetration layer on the P type contact layer, further with dry etching etches downward digital penetration layer, P type Gan contact layer, light emission piling up layer, N type Gan contact layer in orderly to form a N-Mctal area. The next, forms separately a first ohmic contact pole on the P type Gan contact layer for P type ohm contact, a second ohmic contact pole on the N-metal area for N ohm contact. finally forms separately a welding pad on the first ohmic contact pole and the second ohmic contact pole.
Description
Technical field
The present invention relates to a kind of light-emitting diode structure and manufacture method thereof, the structure and the manufacture method thereof of the light-emitting diode ohmic contact of particularly a kind of GaN series LED or other wide gap material.
Background technology
As shown in Figure 1, the structure of conventional gallium nitride (GaN) series LED includes haply: (1) substrate 1; (2) be formed on resilient coating 2 (buffer layer) on the substrate; (3) n type gallium nitride that is formed on the resilient coating 2 is a layer 3; (4) be formed on emissive stacks layer 4 on the n type gallium nitride system layer 3; And (5) are formed on the P type gallium nitride series layer 5 on the emissive stacks layer 4; The method of its formation is as follows:
＜1〉shown in Fig. 2 A, utilize induction coupled plasma ion(ic) etching (Inductively CoupledPlasma-Reactive Ion Etching, ICP-RIE) dry-etching technology, etching downwards is by P type gallium nitride series layer 5, emissive stacks layer 4, arrive n type gallium nitride system layer 3 then, the N-metal (N-Metal) that forms dark about 10000 dusts (A) forms district 6;
＜2〉shown in Fig. 2 B, on P type gallium nitride series layer 5, formation can be used as P type ohmic contact usefulness, and have again transparent characteristic transparency conducting layer 7 (Trausparent Conductive Layer, TCL);
＜3〉shown in Fig. 2 C, form on the district 6 at the N-metal, formation can be used as N type ohmic contact N-metal 8; And
＜4〉shown in Fig. 2 D, on transparency conducting layer and N-metal, form welded gasket 9 simultaneously with the about 100 μ m (micron) of diameter; Just can finish the conventional gallium nitride series LED according to above-mentioned step.
In above-mentioned manufacture method, transparency conducting layer 7, N-metal 8 and welded gasket 9 are to utilize electron gun vapor coating method to form, and can certainly use other method, as TR vapor coating method or sputtering type vapor coating method.Transparency conducting layer 7 employed materials are nickel/gold (Ni/Au) (about 50 dusts/50 dusts), can certainly use other material, as nickel chromium triangle/gold (NiCr/Au) or nickel/golden beryllium (Ni/AuBe).N-metal 8 employed materials are titanium/aluminium (Ti/Al) (about 150 dusts/1500 dusts), can certainly use other material, as titanium/aluminium/titanium/gold (Ti/Al/Ti/Au) (about 150 dusts/1500 dusts/2000 dusts/1000 dusts) or titanium/aluminium/nickel/gold (Ti/Al/Ni/Au) (about 150 dusts/1500 dusts/2000 dusts/1000 dusts).Welded gasket 9 employed materials are titanium/gold (about 150 dusts/20000 dusts), can certainly use other material, as titanium/aluminium/titanium/gold (about 150 dusts/1500 dusts/2000 dusts/10000 dusts) or titanium/aluminium/platinum/gold (about 150 dusts/1500 dusts/2000 dusts/10000 dusts).
But, manufacture method according to above-mentioned conventional gallium nitride series LED structure and ohmic contact thereof has a problem, because transparency conducting layer 7 employed materials are nickel/gold, itself is very poor to the light transmission of visible light, remove leave no choice but plate extremely thinly (about 50 dusts) characteristic (light transmittance about 70%) of printing opacity could be arranged reluctantly, but the conductivity of this moment is unsatisfactory.In this case, operating voltage of conventional gallium nitride series LED (Vf) and brightness (Iv) can can't effectively promote.
Therefore, in order to overcome above-mentioned defective, we need develop a kind of new structure to address the above problem.
Summary of the invention
At the problem of above-mentioned conventional gallium nitride series LED, main purpose of the present invention provides a kind of structure and manufacture method thereof with GaN series LED of digital penetrated bed.
Another object of the present invention provides a kind of reduction tin indium oxide (Indium Tin Oxide, ITO) layer and the gallium nitride based method that contacts interface resistance of P type, can carry out the digital penetrated bed that carrier penetrates within it by one, make above-mentioned indium tin oxide layer and the gallium nitride based contact layer of P type become the state of ohmic contact, to reduce the resistance of the two.
A further object of the present invention provides a kind ofly can carry out the material that carrier penetrates within it.
In the present invention, be to replace nickel/gold with a kind of tin indium oxide material that visible light is had a good light transmission to be used as transparency conducting layer 7.But because also non-ohmic contact between this tin indium oxide material and the gallium nitride based material of P type, so must between the two, add a digital penetrated bed (DigitalTransparent layer) 10, as shown in Figure 4, it is the penetration effect that utilizes carrier, making becomes ohmic contact, to reduce the resistance between the two.
According to above-mentioned purpose, the invention provides a kind of structure and manufacture method thereof with GaN series LED of digital penetrated bed.A kind of structure of GaN series LED is characterized in that comprising a substrate; One is gallium nitride based semiconductor laminated, be formed on this substrate, this gallium nitride based semiconductor laminated have one first upper surface and one second upper surface, wherein, the distance between this first upper surface and this non-conductive substrate is greater than the distance between this second upper surface and this substrate; One digital penetrated bed, it has penetrance greater than 80% for the light of wavelength between 380 millimicrons (nm) are to 560 millimicrons, and can utilize the carrier penetration effect to penetrate to carry out carrier in it; One first Ohm contact electrode is formed on this first upper surface in order to use as P type ohmic contact; And one second Ohm contact electrode, be formed on this second upper surface in order to use as N type ohmic contact.The structure of another kind of GaN series LED is characterized in that comprising: a substrate; One resilient coating is formed on this substrate; One n type gallium nitride is a contact layer, is formed on this resilient coating; One emissive stacks layer, being formed on this n type gallium nitride is on the contact layer; The gallium nitride based contact layer of one P type is formed on this emissive stacks layer; One digital penetrated bed is formed on the gallium nitride based contact layer of P type, and it has penetrance greater than 80% for the light of wavelength between 380 millimicrons to 560 millimicrons, and can utilize the carrier penetration effect to penetrate to carry out carrier in it; One first Ohm contact electrode is formed on this numeral penetrated bed in order to use as P type ohmic contact; And one second Ohm contact electrode, being formed at this n type gallium nitride is in order to use as N type ohmic contact on the contact layer.
Its manufacture method is, at first, provide a substrate, then, form one gallium nitride based semiconductor laminatedly on substrate, this is gallium nitride based semiconductor laminatedly to pile up in regular turn from the bottom to top that a n type gallium nitride is arranged is contact layer, an emissive stacks layer and the gallium nitride based contact layer of a P type.Then, form a digital penetrated bed on the gallium nitride based contact layer of P type, be contact layer and to end at n type gallium nitride be in the contact layer with dry ecthing method etching in regular turn downwards numeral penetrated bed, the gallium nitride based contact layer of P type, emissive stacks layer, n type gallium nitride again, form the district to form a N-metal.Next, form respectively one first Ohm contact electrode on the gallium nitride based contact layer of P type with as P type ohmic contact usefulness, one second Ohm contact electrode forms on the district to use as N type ohmic contact in the N-metal.At last, on first Ohm contact electrode and second Ohm contact electrode, respectively form a welded gasket simultaneously respectively.
Purpose of the present invention and plurality of advantages will reach with reference to accompanying drawing, and be disclosed completely by the detailed description of following specific embodiment.
Description of drawings
Fig. 1 is the structure of conventional gallium nitride series LED;
Fig. 2 A is the manufacture method with conventional gallium nitride series LED of Fig. 1 structure to Fig. 2 D;
Fig. 3 is the structure according to GaN series LED of the present invention;
Fig. 4 is the cross-sectional view according to digital penetrated bed of the present invention;
Fig. 5 A is a manufacture method according to GaN series LED of the present invention to Fig. 5 D;
Fig. 6 is nickel/gold layer and the indium tin oxide layer graph of a relation to wavelength (nm);
Fig. 7 is respectively according to the current-voltage characteristic curve figure of the structure of the structure of conventional gallium nitride series LED and GaN series LED of the present invention; And
Fig. 8 is respectively according to the brightness-current characteristics curve chart of the structure of the structure of conventional gallium nitride series LED and GaN series LED of the present invention.
Among the figure
1 substrate, 20 resilient coatings
2 resilient coatings, 30 n type gallium nitrides system layer
3 n type gallium nitrides system layer 40 emissive stacks layer
4 emissive stacks layers, 50 P type gallium nitride series layer
5 P type gallium nitride series layer, 60 N-metals form the district
6 N-metals form district's 70 transparency conducting layers
7 transparency conducting layers, 80 N-metals
8 N-metals, 90 welded gaskets
9 welded gaskets, 100 digital penetrated beds
10 substrates, 110 indium tin oxide layers
Embodiment
Some embodiments of the present invention can be described in detail as follows, and wherein, the different of assembly are not partly drawn according to actual size.Some yardstick is understood the present invention so that clearer description to be provided to help the stakeholder who is familiar with this skill with the expression that other partly relevant scale ratio is exaggerated.
As shown in Figure 3, at first, one substrate 10 is provided, and utilize the organometallic chemistry gas phase to build brilliant method (Metal Organic Chemical Vapor Deposition, MOCVD), molecular beam epitaxy method (Molecular Beam Epitaxy), gas phase is built brilliant method (Vapor Phase Epitaxy, VPE) or brilliant method (the Liquid Phase Epitaxy of liquid built, LPE) on this substrate 10, form a resilient coating 20, formation method preferable among the present invention is organometallic chemistry gas phase brilliant method of heap of stone, again on resilient coating 20, to form n type gallium nitride system layer 30 in regular turn with above-mentioned identical method, on n type gallium nitride system layer 30, form an emissive stacks layer 40, on emissive stacks layer 40, form a P type gallium nitride series layer 50, and on P type gallium nitride series layer 50, form a digital penetrated bed 100.Wherein, the cross-sectional view of digital penetrated bed 100 as shown in Figure 4.In Fig. 4, digital penetrated bed 100 is piled up by the materials A lxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r of two kinds of thickness cumulative (10 dusts are to 90 dusts)/decrescence (90 dusts are to 10 dusts) to form, wherein, 0＜[x, y, z, p, q, r]＜1, conductivity can be P type, N type, or I type.
Then, again with dry ecthing method etching in regular turn downwards numeral penetrated bed 100, P type gallium nitride series layer 50, emissive stacks layer 40, n type gallium nitride system layer 30 and end at n type gallium nitride system layer 30, the N-metal that forms dark about 10000 dusts forms district 60, dry ecthing method preferable among the present invention is for induction coupled plasma ion-etching, shown in Fig. 5 A.
Then, utilize TR vapor coating method, sputtering type vapor coating method or electron gun vapor coating method on P type gallium nitride series layer 50, formation can be used as P type ohmic contact and use, and the indium tin oxide layer 110 that has transparent characteristic again, that is first Ohm contact electrode, preferred methods is a sputtering type vapor coating method among the present invention, the thickness range of indium tin oxide layer 110 approximately from 100 dusts to 20000 dusts, be preferable shown in Fig. 5 B to 4000 dusts wherein with 1000 dusts.
Then, utilize above-mentioned described the whole bag of tricks to form to form in the district 60 and can be used as N type ohmic contact N-metal 80 at the N-metal, that is second Ohm contact electrode, preferred methods is an electron gun vapor coating method among the present invention, N-metal 80 employed materials are titanium/aluminium (about 150 dusts/1500 dusts), can certainly use other material, as titanium/aluminium/titanium/gold (about 150 dusts/1500 dusts/2000 dusts/1000 dusts) or titanium/aluminium/nickel/gold (about 150 dusts/1500 dusts/2000 dusts/1000 dusts), shown in Fig. 5 C.Distance between this first Ohm contact electrode and this substrate is greater than the distance between this second Ohm contact electrode and this substrate.
At last, utilize the wherein a kind of of above-mentioned described the whole bag of tricks, on indium tin oxide layer 110 and N-metal 80, form simultaneously and have the about 100 microns welded gasket of diameter 90, preferred methods is an electron gun vapor coating method among the present invention, welded gasket 90 employed materials are titanium/gold (about 150 dusts/20000 dusts), can certainly use other material, as titanium/aluminium/titanium/gold (150 dusts/1500 dusts/2000 dusts/10000 dusts) or titanium/aluminium/platinum/gold (about 150 dusts/1500 dusts/2000 dusts/10000 dusts), shown in Fig. 5 D, by this, just can finish GaN series LED of the present invention.
Fig. 6 is nickel/gold layer and the indium tin oxide layer graph of a relation to wavelength, wherein nickel/gold layer has been located maximum 73% at wavelength 500 millimicrons (nm), and indium tin oxide layer has maximum 93% at 500 millimicrons of places of wavelength, and significantly, indium tin oxide layer has more excellent light transmission to visible light.
In addition, Fig. 7 is respectively according to the current-voltage characteristic curve figure of the structure of the structure of conventional gallium nitride series LED and GaN series LED of the present invention; And Fig. 8 is respectively according to the brightness-current characteristics curve chart of the structure of the structure of conventional gallium nitride series LED and GaN series LED of the present invention.Shown in above-mentioned figure, the electrical characteristics of the assembly that manufactures according to structure of the present invention and traditional structure are very nearly the same, and still, brightness but has and promotes approximately 20%, has proved that the present invention has tangible progress really compared to known technology.
Though the present invention discloses as above with a specific embodiment; right its is not in order to limit the present invention; anyly be familiar with this skill person; without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (25)
1. the structure of a GaN series LED is characterized in that comprising
One substrate;
One is gallium nitride based semiconductor laminated, be formed on this substrate, this gallium nitride based semiconductor laminated have one first upper surface and one second upper surface, wherein, the distance between this first upper surface and this non-conductive substrate is greater than the distance between this second upper surface and this substrate;
One digital penetrated bed, it has penetrance greater than 80% for the light of wavelength between 380 millimicrons (nm) are to 560 millimicrons, and can utilize the carrier penetration effect to penetrate to carry out carrier in it;
One first Ohm contact electrode is formed on this first upper surface in order to use as P type ohmic contact; And
One second Ohm contact electrode is formed on this second upper surface in order to use as N type ohmic contact.
2. the structure of GaN series LED as claimed in claim 1, wherein, this gallium nitride based semiconductor laminated n type gallium nitride that comprises is contact layer, an emissive stacks layer and the gallium nitride based contact layer of a P type.
3. the structure of GaN series LED as claimed in claim 1, wherein, this numeral penetrates series of strata and is piled up by the materials A lxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r of two kinds of thickness cumulative (10 dusts are to 90 dusts)/decrescence (90 dusts are to 10 dusts) and form, and 0≤x, y, z, p, q, r≤1, conductivity can be the P type, N type, or I type.
4. the structure of GaN series LED as claimed in claim 1, wherein, the material that forms this first Ohm contact electrode can be tin indium oxide.
5. the structure of GaN series LED as claimed in claim 4, wherein, the thickness range of this first Ohm contact electrode approximately from 100 dusts to 20000 dusts, preferable thickness is that 1000 dusts are to 4000 dusts.
6. the structure of GaN series LED as claimed in claim 5, wherein, the distance between this first Ohm contact electrode and this substrate is greater than the distance between this second Ohm contact electrode and this substrate.
7. the structure of a GaN series LED is characterized in that comprising:
One substrate;
One resilient coating is formed on this substrate;
One n type gallium nitride is a contact layer, is formed on this resilient coating;
One emissive stacks layer, being formed on this n type gallium nitride is on the contact layer;
The gallium nitride based contact layer of one P type is formed on this emissive stacks layer;
One digital penetrated bed is formed on the gallium nitride based contact layer of P type, and it has penetrance greater than 80% for the light of wavelength between 380 millimicrons to 560 millimicrons, and can utilize the carrier penetration effect to penetrate to carry out carrier in it;
One first Ohm contact electrode is formed on this numeral penetrated bed in order to use as P type ohmic contact; And
One second Ohm contact electrode, being formed at this n type gallium nitride is in order to use as N type ohmic contact on the contact layer.
8. the structure of GaN series LED as claimed in claim 7, wherein, this numeral penetrated bed is that the materials A lxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r by two kinds of thickness cumulative (10 dusts are to 90 dusts)/decrescence (90 dusts are to 10 dusts) is piled up and forms, and 0≤x, y, z, p, q, r≤1, conductivity can be the P type, N type, or I type.
9. the structure of GaN series LED as claimed in claim 7, wherein, the material that forms this first Ohm contact electrode can be tin indium oxide.
10. the structure of GaN series LED as claimed in claim 9, wherein, the thickness range of this first Ohm contact electrode approximately from 100 dusts to 20000 dusts, preferable thickness is that 1000 dusts are to 4000 dusts.
11. the structure of GaN series LED as claimed in claim 10, wherein, the distance between this first Ohm contact electrode and this non-conductive substrate is greater than the distance between this second Ohm contact electrode and this substrate.
12. the manufacture method of a GaN series LED, this method comprises:
One base material is provided;
Form one gallium nitride based semiconductor laminatedly on this substrate, wherein, this is gallium nitride based semiconductor laminatedly to pile up in regular turn from the bottom to top that a n type gallium nitride is arranged is contact layer, an emissive stacks layer and the gallium nitride based contact layer of a P type;
Form a digital penetrated bed on the gallium nitride based contact layer of this P type; With dry ecthing method etching in regular turn downwards should the numeral penetrated bed, the gallium nitride based contact layer of this P type, this emissive stacks layer, this n type gallium nitride are contact layer and to end at this n type gallium nitride be in the contact layer, form the district to form a N-metal;
Form one first Ohm contact electrode on the gallium nitride based contact layer of this P type to use as P type ohmic contact;
Forming one second Ohm contact electrode forms on the district to use as N type ohmic contact in this N-metal; And
Simultaneously on this first Ohm contact electrode and this second Ohm contact electrode, respectively form a welded gasket respectively.
13. the manufacture method of GaN series LED as claimed in claim 12, wherein, the method that forms this numeral penetrated bed is to be selected from organometallic chemistry gas phase brilliant method (MetalOrganic Chemical Vapor Deposition of heap of stone, MOCVD), molecular beam epitaxy method (MolecularBeam Epitaxy), gas phase brilliant method (Vapor Phase Epitaxy of heap of stone, VPE) and the brilliant method of liquid built (Liquid Phase Epitaxy, LPE) a kind of.
14. the manufacture method of GaN series LED as claimed in claim 13, wherein, the material of this numeral penetrated bed is to be selected from a material, this material has penetrance greater than 80% for the light of wavelength between 380 millimicrons to 560 millimicrons, and can utilize the carrier penetration effect to penetrate to carry out carrier in it.
15. the manufacture method of GaN series LED as claimed in claim 14, wherein, this numeral penetrated bed is that the materials A lxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r by two kinds of thickness cumulative (10 dusts are to 90 dusts)/decrescence (90 dusts are to 10 dusts) is piled up and forms, and 0≤x, y, z, p, q, r≤1, conductivity can be P type, N type, or I type.
16. the manufacture method of GaN series LED as claimed in claim 12, wherein, this dry ecthing method can be induction coupled plasma ion-etching (Inductively CoupledPlasma-Reactive Ion Etching, ICP-RIE).
17. the manufacture method of GaN series LED as claimed in claim 16 wherein, forms about 10000 dusts of district's degree of depth with formed this N-metal of induction coupled plasma ion-etching.
18. the manufacture method of GaN series LED as claimed in claim 12, wherein, the material that forms this first Ohm contact electrode can be tin indium oxide.
19. the manufacture method of GaN series LED as claimed in claim 18, wherein, this first ohmic contact layer is to utilize the sputtering type gas phase to steam the method for crossing to form.
20. the manufacture method of GaN series LED as claimed in claim 12, wherein, the thickness range of this first Ohm contact electrode approximately from 100 dusts to 20000 dusts, preferable thickness is that 1000 dusts are to 4000 dusts.
21. the manufacture method of GaN series LED as claimed in claim 12, wherein, the material that forms this second Ohm contact electrode is be selected from titanium/aluminium (Ti/Al), titanium/aluminium/titanium/gold (Ti/Al/Ti/Au) and titanium/aluminium/nickel/gold (Ti/Al/Ni/Au) a kind of.
22. the manufacture method of GaN series LED as claimed in claim 21, wherein, the preferred thickness of this titanium/aluminium is that the preferred thickness of 150 dusts/1500 dusts, this titanium/aluminium/titanium/gold is that the preferred thickness of Egyptian these Ti/Al/Ni/Au of 150 dusts/1500 dusts/2000 dusts/1000 is 150 dusts/1500 dusts/2000 dusts/1000 dusts.
23. the manufacture method of GaN series LED as claimed in claim 12, wherein, this gallium nitride based semiconductor laminated resilient coating that more includes, this resilient coating are to be between contact layer between this base material and this n type gallium nitride.
24. the manufacture method of GaN series LED as claimed in claim 12, wherein, the material of this welded gasket is to be selected from titanium/gold, titanium/aluminium/titanium/gold and titanium/aluminium/platinum/gold.
25. the manufacture method of GaN series LED as claimed in claim 24, wherein, the preferred thickness of this titanium/gold is that the preferred thickness of 150 dusts/20000 dusts, this titanium/aluminium/titanium/gold is that the preferred thickness of Egyptian this titanium/aluminium of 150 dusts/1500 dusts/2000 dusts/10000/platinum/gold is 150 dusts/1500 dusts/2000 dusts/10000 dusts.
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| CN 02146269 CN1256777C (en) | 2002-10-17 | 2002-10-17 | Structure of gallium nitride light emitting diodes and producing method thereof |
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| CN 02146269 CN1256777C (en) | 2002-10-17 | 2002-10-17 | Structure of gallium nitride light emitting diodes and producing method thereof |
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| CN1256777C CN1256777C (en) | 2006-05-17 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007048345A1 (en) * | 2005-10-27 | 2007-05-03 | Lattice Power (Jiangxi) Corporation | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE |
| CN100414723C (en) * | 2004-12-06 | 2008-08-27 | 璨圆光电股份有限公司 | LED structure |
| CN101897045B (en) * | 2007-12-12 | 2012-02-29 | 昭和电工株式会社 | Light emitting diode and method for manufacturing the same |
-
2002
- 2002-10-17 CN CN 02146269 patent/CN1256777C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100414723C (en) * | 2004-12-06 | 2008-08-27 | 璨圆光电股份有限公司 | LED structure |
| WO2007048345A1 (en) * | 2005-10-27 | 2007-05-03 | Lattice Power (Jiangxi) Corporation | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE |
| CN101897045B (en) * | 2007-12-12 | 2012-02-29 | 昭和电工株式会社 | Light emitting diode and method for manufacturing the same |
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| CN1256777C (en) | 2006-05-17 |
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