CN1472884A - 具有晶种层的改进的谐振器 - Google Patents

具有晶种层的改进的谐振器 Download PDF

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CN1472884A
CN1472884A CNA03109418XA CN03109418A CN1472884A CN 1472884 A CN1472884 A CN 1472884A CN A03109418X A CNA03109418X A CN A03109418XA CN 03109418 A CN03109418 A CN 03109418A CN 1472884 A CN1472884 A CN 1472884A
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resonator
seed layer
crystal seed
piezoelectric
bottom electrode
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CN100466469C (zh
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保罗·D·布拉德利
唐纳德·李
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多明戈·A·菲格雷多
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Avago Technologies International Sales Pte Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02141—Means for compensation or elimination of undesirable effects of electric discharge due to pyroelectricity
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明公开了一种具有晶种层(40)的薄膜谐振器(32)及其制造方法。该谐振器(32)具有晶种层(38)，有利于谐振器(32)的高品质压电层(17)的构造。该谐振器(32)具有晶种层(38)、一个底部电极(16)、压电层(17)和一个顶部电极(20)。该晶种层(40)采用与压电层(17)相同的材料，例如氮化铝(ALN)。

Description

具有晶种层的改进的谐振器
技术领域
本发明涉及声谐振器，具体说，涉及可作为电子电路滤波器的谐振器。
背景技术
降低电子设备成本与大小的需要导致了对更小的电子滤波元件的不断需求。诸如移动手机、微型收音机的消费性电子产品，对于其中包含的组件的大小和成本都有严格的限制。而且许多这样的器件使用必须被调节到精确频率的电子滤波器。滤波器选择并通过那些处于希望通过的频率范围的电信号的频率成分，同时将那些处于希望的频率范围之外的频率成分消除或减弱。
一类有可能满足这些需求的电子滤波器由薄膜腔声谐振器(FBAR，thin film bulk acoustic resonators)构成。这些器件利用了薄膜压电材料中的纵向体声波。在一种简单的结构中，一层压电(PZ)材料被夹在两个金属电极之间。这种夹层结构最好悬置于空气中。图1A和图1B说明了作为实例的具有一个谐振器12(例如，一个FBAR)的装置10的构造。图1A给出了装置10的俯视图，图1B给出了装置10沿图1A中A-A线的侧视图。谐振器12构造在衬底14上。沉积并蚀刻在衬底14上的依次是底部电极层15、压电层17和顶部电极层19。层叠并处于腔体22上方的这些层——15、17和19——的各个部分(如括号12所示)，构成了谐振器12。这些部分被称为底部电极16、压电部分18和顶部电极20。在谐振器12中，底部电极16和顶部电极20夹着PZ部分18。电极16和20是导体，而压电部分18一般为晶体，例如氮化铝(AlN)。
当在金属电极16和20之间施加电场时，PZ部分18将部分电能转化成机械波形式的机械能。机械波沿与电场相同的方向传播并在电极/空气界面上折回。
在谐振频率，谐振器12起到一个电子谐振器的作用。谐振频率是这样一个频率，该频率对应的传播于器件中的机械波的半波长，由很多因素决定，包括给定机械波在材料中的相速度下谐振器12的总厚度。由于机械波的速度比光的速度小四个量级，所以获得的谐振器能够非常紧凑。应用于GHz范围的谐振器可以被构造成具有横向上小于100微米量级和总厚度上几个微米的物理尺寸。实施中，比如，用已知的半导体制造工艺构造出谐振器12，将其与电子元件和其他谐振器结合构成用于电信号的电子滤波器。
对于各种用于电子滤波器的FBAR的设计的使用和制造技术在技术领域中已为人知，而且许多专利已经获得授权。例如，授予Paul D.Bradley等人的美国专利No.6,262,637公开了一种结合了薄膜腔声谐振器(FBAR)的双工器。各种制造(FBAR)的方法也获得了专利授权，例如，授予Richard C.Ruby等人的美国专利No.6,060,181公开了谐振器的各种结构和制造方法，授予Kenneth M.Lakin的美国专利No.6,239,536公开了制造封闭式薄膜谐振器的方法。
然而，对提高FBAR的品质和可靠性的不断需求，提出了要求更优的谐振器品质、设计和制造方法的挑战。例如，一个这样的挑战就是消除或降低FBAR对来自周围电路的静电放电和电压尖脉冲的破坏的易感度。另一个挑战是消除或降低谐振器对由于其周围环境，如空气或水汽的相互作用而造成的频率漂移的易感度。
发明内容
本发明就是要迎接这些以及其他的技术挑战。根据本发明的一个方面，构造于衬底之上的谐振器具有一个晶种层，其上构造有一个底部电极、压电部分和一个顶部电极。晶种层使得能以更高的品质构造压电部分。
根据本发明的另一个方面，电子滤波器具有一个构造于衬底之上的谐振器。该谐振器包括了一个由氮化铝制造的具有10埃(1纳米)左右到10,000埃(1微米)左右的厚度范围的晶种层部分。实验中，成功地实现了具有100埃到400埃范围之内的厚度的晶种层。该谐振器还包括一个底部电极，由钼制造。压电部分在底部电极之上，该压电部分由氮化铝制造。最后，在压电部分之上是一个顶部电极，该顶部电极由钼制造。
根据本发明的另一个方面，还公开了一种谐振器的制造方法。首先，在衬底上构造一个晶种层。接着，在该晶种层上构造一个底部电极。然后，在该底部电极上构造压电部分。最后，在该压电部分上构造一个顶部电极。
本发明的其他方面和优点在以下参照附图以实例方式阐述本发明原理的详细说明中将会更清晰。
附图说明
图1A是一个包括了现有技术中已知的一种谐振器的装置的俯视图。
图1B是图1A中的装置沿A-A线剖开的侧视图。
图2A是根据本发明第一个实施例的装置的俯视图。
图2B是图2A中的装置沿B-B线剖开的侧视图。
图3A是根据本发明第二个实施例的装置的俯视图。
图3B是图3A中的装置沿C-C线剖开的侧视图。
图4A是根据本发明第三个实施例的装置的俯视图。
图4B是图4A中的装置沿D-D线剖开的侧视图。
图4C是一示意图，该图部分地说明一个能够利用图4A中装置形成的电路。
具体实施方式
如说明图中所示，本发明实施于一个具有用以提高PZ部分品质的晶种层的谐振器。因为晶种层，PZ部分能够被构造成具有与无晶种层构造出来的PZ部分相比更接近单晶体的特性。更高品质的PZ部分带来了更高品质的谐振器，因此带来了更高品质的滤波电路。
图2A图示了一个根据本发明第一个实施例的装置30的俯视图。图2B是图2A中的装置30沿B-B线剖开的侧视图。图2A和2B中的装置30的一些部分与图1A和1B中的装置10的对应部分相似。为了方便，为与图1A和1B中装置10的部分相似的图2A和2B中的装置30的部分分配了相同的标号，为不相同的部分分配了不同的标号。参见图2A和2B，根据本发明的一个实施例的装置30包括一个构造于衬底14之上的谐振器32。构造装置30时首先在衬底14上刻蚀一个腔体34，再在其中填入合适的牺牲性材料，例如，磷硅酸盐玻璃(PSG)。接着，用已知的方法，如化学机械抛光法，将现在包括被填充的腔体34的衬底整为平面。腔体34可以包括一条排空隧道部分34a，与排空通道35对齐，以后牺牲性材料通过它们排出。
然后，在整为平面的衬底14上构造一个薄的晶种层38。通常晶种层38被溅射到整为平面的衬底14上。晶种层38可以用氮化铝(AlN)或者其他相似晶体材料，比如氮氧化铝(AlON)、二氧化硅(SiO2)、氮化硅(Si3N4)或者碳化硅(SiC)构成。在图示实施例中，晶种层的厚度大约在10埃(或者1纳米)到10,000埃(或者1微米)的范围内。构造晶种层的工艺和过程是现有技术。比如，可以采用广为人知和使用的溅射技术来实现这一目的。
然后，在晶种层38上方，依次沉积以下层：一个底部电极层15，一个压电层17和一个顶部电极层19。层叠并处于腔体34上方的这些层——36、15、17和19——的一部分(如括号32所示)，构成了谐振器32。这些部分被称为晶种层40、底部电极16、压电部分18和顶部电极20。底部电极16和顶部电极20夹着PZ部分18。
电极16和20为导体，例如钼，在简单实施例中，厚度范围为0.3微米到0.5微米。PZ部分18一般用晶体制成，例如氮化铝(AlN)，在简单实施例中，厚度范围为0.5微米到1.0微米。从图2A中谐振器32的俯视图看，该谐振器可以有约150微米宽，100微米长。当然，这些尺寸可以大幅度变化，取决于很多因素，例如，如果没有限制的话，可以包括期望的谐振频率、使用的材料、所用的制造工艺等。具有这些尺寸的图示谐振器32能被用于1.92GHz附近的滤波器。当然，本发明不限于这些尺寸或频率范围。
构造晶种层38提供了一个PZ层17能够构造于其上的更好的垫层(underlayer)。因此，有了晶种层38，能够构造出更高品质的PZ层17，由此带来了更高品质的谐振器32。事实上，在本简单实施例中，用于晶种层38和PZ层17的材料是一样的，即氮化铝。这是由于晶种层使一个更光滑、更均匀的底部电极层15结核成形，而该电极层则促进了PZ层17的材料更接近单晶体品质。因此，PZ层17的压电耦合常数提高了。提高了的压电耦合常数使得能够用谐振器32制造带宽更宽的电滤波器，还带来更可重现的结果，因为它非常接近AlN材料的理论最大值。
图3A给出了根据本发明第二个实施例的装置50的俯视图。图3B是图3A中的装置50沿C-C线剖开的侧视图。图3A和3B中装置50的一部分与图2A和2B中装置30的对应部分相似。为了方便起见，为相似于图2A和2B中的装置30的对应部分的图3A和3B中的装置50的部分分配了相同的标号，不相同部分分配了不同的标号。
参见图3A和3B，本发明的装置50包括一个构造在衬底14之上的谐振器52。装置50的构造方法类似于图2A和2B所示装置30，以上已经讨论过。即在一个具有腔体34的衬底14上构造底部电极层15、压电层17和顶部电极层19。可以选择的是，在包含腔体34的衬底14和底部电极层15之间构造一个晶种层38。这些层的详细内容前面已经讨论过。谐振器52包括了层叠并构造于腔体34上方的这些层——36、15、17和19——的一部分(如括号52所示)。这些部分被称为晶种层部分40、底部电极16、压电部分18和顶部电极20。最后，在紧贴顶部电极20之上构造一个保护层54。该保护层54至少覆盖顶部电极20，也可以，如图所示，覆盖大于顶部电极20的面积。而且，保护层54处于腔体34上方的部分也是谐振器52的一部分。就是说，保护层54的这一部分对谐振器52的性能产生影响，它和谐振器52的所有其他部分——40、16、18和20——一起谐振。
保护层54以化学方法稳定和减少了物质吸附在顶部电极20的表面上的趋势。被吸附的物质能够改变谐振器32的谐振频率。也可以调节厚度来优化谐振器32的电学品质因素(q)。
没有保护层54，谐振器52的谐振频率相对而言更容易随时间漂移。这是由于顶部电极20是一种导体金属，能够通过暴露于空气和可能存在的水汽而氧化。顶部电极20的氧化改变了该顶部电极20的质量，从而改变了谐振频率。为了减小或者最小化谐振频率漂移的问题，保护层54一般用不易与环境相作用的惰性材料制成，例如，氮氧化铝(AlON)、二氧化硅(SiO2)、氮化硅(Si3N4)或者碳化硅(SiC)。在实验中，制成了厚度范围在30埃到2微米之内的保护层54。保护层54可以包括氮化硅材料，它也能被用于压电层17。
这里，晶种层部分40不仅提高了谐振器52的晶质品质，也起到了保护性垫层的作用，保护底部电极16不受通过排出通道35到达底部电极16的来自环境的空气和可能的水气的影响。
图4A给出了根据本发明第三个实施例的装置60的俯视图。图4B是图4A中的装置60沿D—D线剖开的侧视图。图4C是一简单示意图，部分地说明了一个能够利用装置60形成的等效电路。图4A、4B和4C中装置60的一部分与图1A和1B中装置10和图2A和2B中装置30的对应部分相似。为了方便起见，相似于图1A和1B中的装置10和图2A和2B中的装置30的对应部分的图4A、4B和4C中的装置60的部分被分配了相同的标号，不相同部分分配了不同的标号。
参见图4A、4B和4C，装置60的制造方法与图1A和1B所示装置10类似，在此前面已经讨论了。即，在具有腔体22的衬底14上方构造底部电极层15、压电层17和顶部电极层19。这些层以与图2A和2B所示装置30相似的方法构造，这些层的具体细节在前面讨论了。谐振器12最好是一个薄膜谐振器，例如FBAR，包括这些层叠并处于腔体22上方的层——15、17和19——一部分(如括号12所示)。这些部分被称为底部电极16、压电部分18和顶部电极20。
装置60包括至少一个结合片。在图4A和4B中示出了一个第一结合片62和一个第二结合片64。第一结合片62通过顶部电极层19连接到谐振器12上。该第一结合片62与半导体衬底14相接触，从而形成一个肖特基接界二极管(Schottky junction diode)63。这种二极管的运行特性在技术领域中是已知的。
图中还图示了第二结合片64，通过底部电极层15连接到谐振器12上。据图示，该第二结合片64在两处地方和衬底14接触，从而形成了两个肖特基二极管触点65。事实上，与衬底14一起，一个结合片能够被构造成形成多个二极管触点，用以保护它所连接的谐振器。由单个结合片64的触点65构成电学上的单个肖特基二极管。
结合片62、64一般采用导电金属制成，例如金、镍、铬、其他合适的材料，或者它们的任向组合。
图4C可以用来说明具有谐振器12的滤波电路72的运行。正常情况下，没有电流通过二极管63和65，因为二极管63在一个方向起到开路电路的作用而二极管65在相反方向起到一个闭路电路的作用。但是，当一个静电电压脉冲通过结合片64(也许从一个天线66)被引入谐振器12时，二极管63击穿。当二极管63击穿时，它实际上就是一个闭合短路电路，使电压脉冲能够传送到衬底14，并最终到达地线68，从而保护了谐振器12免受电压脉冲的破坏。另一个二极管65通过相似的作用过程来保护谐振器12免受来自连接于滤波器72的其他电子电路70的电压脉冲的破坏。即，被构造于半导体衬底之上的两个金属片，比如连接到谐振器12的电学上相对的两侧的片62和片64，形成包括两个背对背肖特基二极管的一个电路，它使得高压静电放电能够不造成危害地消散在衬底里，而不是不可逆地击穿将顶部和底部电极，例如电极16和20，分开的压电层，例如PZ层17。图4C所示电子的示意图说明了这些连接。
在其他的实施例中，一个单独的装置可以包括一个具有以上讨论的所有特征，包括具有图2A、2B、3A和3B所示的晶种层38和保护层54以及图4A和4B所示的结合片62和64(形成肖特基二极管63和65)的谐振器。在该实施例中，片62和64可以形成于晶种层38之上，并突出于顶部电极层19和底部电极层15几个微米
通过上述说明，可以看出本发明是新颖的，并具有超出现有技术的优点。尽管以上描述和图例说明的是本发明的一个具体实施例，本发明并不限于如上描述和图例说明的具体形式和各部分的组合。本发明由接下来的权利要求限定。

Claims (10)

1.一种构造于衬底(14)之上的谐振器(32)，该谐振器(32)包括：晶种层部分(40)；在所述晶种层之上的底部电极(16)；在所述底部电极之上的压电部分(18)；和在所述压电部分之上的顶部电极(20)。
2.如权利要求1所述的谐振器(32)，其中所述晶种层部分(40)包括氮化铝。
3.如权利要求1所述的谐振器(32)，其中所述晶种层部分(40)具有从10埃到10,000埃的厚度范围。
4.如权利要求1所述的谐振器(32)，其中所述晶种层部分(40)和所述压电部分(18)包括相同材料。
5.如权利要求1所述的谐振器(32)，其中所述晶种层部分(40)和所述压电部分(18)包括氮化铝，所述底部电极(16)和所述顶部电极(20)包括铝。
6.如权利要求1所述的谐振器(32)，其中谐振器(32)构造于一个腔体(34)之上。
7.一种电子滤波器，包括一个构造于衬底(14)之上的谐振器(32)，该谐振器(32)包括：包括氮化铝的厚度范围为10埃到10,000埃的晶种层部分(40)；在所述晶种部分(40)之上的包括钼的底部电极(16)；在所述底部电极(16)之上的包括氮化铝的压电部分(18)；和在所述压电部分(18)之上包括钼的顶部电极(20)。
8.一种构造谐振器(32)的方法，该方法包括：在衬底上构造一个晶种层(38)；在所述晶种层上构造一个底部电极(16)；在所述底部电极(16)上构造压电部分(18)；和在所述压电部分(18)上构造一个顶部电极(20)。
9.如权利要求8所述的方法，其中所述晶种层(40)包括氮化铝。
10.如权利要求8所述的方法，其中所述晶种层(40)厚度范围为10埃到10,000埃。
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