CN1470800A - Method for increasing thermal oxidation uniformity and oxidation oven system - Google Patents
Method for increasing thermal oxidation uniformity and oxidation oven system Download PDFInfo
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- CN1470800A CN1470800A CNA03148087XA CN03148087A CN1470800A CN 1470800 A CN1470800 A CN 1470800A CN A03148087X A CNA03148087X A CN A03148087XA CN 03148087 A CN03148087 A CN 03148087A CN 1470800 A CN1470800 A CN 1470800A
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- shunting
- oxidation
- reflecting surface
- pressuring plate
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Abstract
Hydrogen flame and oxygen are input from a air inlet of the furnace tube of the oxidation oven. The said airflow is guided to the wall of the furnace tube, and procedure of heat dissipation is carried out fully. The galvanic couple on edges of the oxidation oven induces overheating airflow. Measures of changing heating power, balancing quantity of heat brought by the airflow, blocking off and absorbing infrared radiation sent by the hydrogen flame, increasing pressure in the tube and lowering speed of jetting hydrogen into the oven can be taken to build a constant temperature area where thermal oxidation is carried out. The oxidation oven system possesses the features of simple structure, easy of use so as to improve oxidation uniformity from larger than +/-15% to less than +/2.5%. The invention can be widely used in LSI technique.
Description
Technical field:
The present invention relates to a kind of microelectronic technique, relate in particular to the synthetic inhomogeneity method of thermal oxide of hydrogen-oxygen in a kind of raising microelectronic technique, and the oxidation furnace system that can realize this method.
Background technology:
Advantages such as the synthetic oxidation of hydrogen-oxygen is fast with oxidation rate, quality of oxide layer is high, the contamination level is low, technology is simple, reliable are widely used in modern VLSI (modern large scale integrated circuit) technology.In general, the synthetic oxidation furnaces of hydrogen-oxygen is divided into two kinds of preheating type and internal combustion types.The former, complex structure needs special-purpose precombustion chamber and control assembly thereof, is used for the oxidation of large-sized silicon wafers, its oxidation uniformity height more; The latter, simple in structure, be directly to insert the hydrogen jet pipe at general oxidation furnace inlet end, need not special-purpose member.Though, the mode of oxidizing of this internal combustion structure, highly versatile.But when using it for the heavy caliber boiler tube, because hydrogen flowing quantity is big, hydrogen flame power is big, destroy the Temperature Distribution in the oxidation furnace, cause the oxidation uniformity relatively poor: the oxidated layer thickness deviation is greater than soil 15% in the sheet and between sheet, suitably reduce hydrogen flowing quantity or warm area is tilted, the oxidated layer thickness deviation can be reduced to soil 10%, this is that modern VLSI technology institute is unacceptable.And when temperature lower (800-1000 ℃), the oxidation uniformity can be poorer.And this temperature is often used in modern VLSI technology.
Goal of the invention:
The objective of the invention is to the relatively poor problem of oxidation uniformity when carrying out the synthetic oxidation of hydrogen-oxygen at the heavy caliber boiler tube, provide a kind of raising thermal oxide inhomogeneity method.
Another object of the present invention is to provide a kind of oxidation furnace system that realizes said method.
The method of the raising thermal oxide uniformity of the present invention, its step comprises
1, from oxidation furnace boiler tube air inlet input hydrogen flame and oxygen;
2, said flow is led furnace wall is fully dispelled the heat it;
3, oxidation sole section galvanic couple induction overfire air stream is by changing the heat that limit section heating power balance air-flow is brought into;
4, stop and absorb the infra-red radiation that the hydrogen flame sends;
5, improve the interior pressure of boiler tube, reduce the speed that hydrogen sprays into boiler tube;
6, finish thermal oxide in the flat-temperature zone of boiler tube.
The present invention by the shunting reflecting surface in the boiler tube with the air-flow furnace wall that leads.The shunting reflecting surface is the hemisphere face structure.Behind the shunting reflecting surface, one group of silicon chip is set, makes air-flow produce disturbance.The uniform flow pressuring plate that the band passage is set behind silicon chip reduces the airflow area.The present invention advances the dog hole sealing with the furnace crown of oxidation furnace, adds spring on fire door, withstands furnace crown to reduce the slit between boiler tube and the furnace crown when fire door is closed.
The oxidation furnace system of the raising thermal oxide uniformity of the present invention comprises oxidation furnace, and the furnace crown of oxidation furnace advances the dog hole sealing, establishes spring on the fire door, and spring withstands furnace crown when fire door is closed; Uniform flow heat insulation and dissipation device is set in the oxidation furnace, and uniform flow heat insulation and dissipation device comprises the shunting reflecting surface, the uniform flow pressuring plate, and shunting reflecting surface and uniform flow pressuring plate are connected to the link two ends, and the shunting reflecting surface is the hemisphere face structure; Have passage on the shunting pressuring plate; Have film trap on the link between shunting reflecting surface and the uniform flow pressuring plate, place silicon chip.
The shunting pressuring plate is a circular slab, evenly offers passage on the plate face.The diameter of shunting pressuring plate is greater than the spherical radius of described shunting reflecting surface.Shunting reflecting surface, uniform flow pressuring plate and link adopt quartz or carbofrax material to make.
The present invention is directed to the relatively poor problem of oxidation uniformity when the heavy caliber boiler tube carries out the synthetic oxidation of hydrogen-oxygen, angle from hydrodynamics and thermal conduction study, analyzed in the heavy caliber oxidation furnace, adopt the internal combustion structure to carry out the synthetic oxidation of hydrogen-oxygen, cause the uneven reason of silicon chip layer thickness, set about from following four aspects.
1, overfire air stream guiding furnace wall, it is fully dispelled the heat.Because, with the furnace wall heat-shift be the unique heat radiation approach of overfire air stream;
2, allow oxidation sole section galvanic couple correctly react to come out of the stove in overheated situation, by changing the heat that limit section heating power comes the balance air-flow to bring into;
3, block and absorb the infra-red radiation that the hydrogen flame sends, make it can not inject the flat-temperature zone;
4, suitably improve the interior pressure of boiler tube, reduce the speed that hydrogen sprays into boiler tube.
According to the principle of hydrodynamics and thermal conduction study, the present invention proposes with semi-sealing tube respective outer side edges uniform flow heat insulation and dissipation device and improve the synthetic inhomogeneity method of oxidation of hydrogen-oxygen.
The present invention has good feasibility, uses hardly when using on general oxidation furnace equipment is transformed.The apparatus structure of uniform flow heat insulation and dissipation is simple, easy to use, and the ad-hoc location of directly putting into boiler tube both can; Owing to having analyzed the reason that problem produces more all sidedly, and, when design, each factor is all considered to some extent, therefore, having solved the internal combustion structure preferably is used for big caliber oxidation furnace and carries out the synthetic oxidation of hydrogen-oxygen, cause the uneven problem of oxidated layer thickness, effect after the use is very obvious, experiment shows, the uniformity that the inventive method can make the synthetic oxidation of internal combustion structure hydrogen-oxygen is from greater than ± 15% level of bringing up to less than ± 2.5, for the quality that improves the synthetic oxidation technology of hydrogen-oxygen provides a kind of easy, effective, low cost solution.
Description of drawings:
Fig. 1 uniform flow heat insulation and dissipation of the present invention apparatus structure schematic diagram
(a) survey view (b) profile
1-uniform flow pressuring plate (120 millimeters of diameters); 2-silicon chip group (100 millimeters of silicon chip diameters);
Perforate circular hole on 3-uniform flow pressuring plate;
4-link (long 120 millimeters, on have film trap, can place silicon chip);
5-shunting reflecting surface (being that a diameter is 110 millimeters a hemisphere face baffle plate);
Fig. 2 the inventive method schematic diagram
The Quartz stove tube of 6-oxidation furnace (140 millimeters of interior diameters); 7-oxidation furnace calandria;
8-oxidized silicon chip (100 millimeters of diameters); 9-oxidation sole section temperature thermocouple;
10-uniform flow heat insulation and dissipation device (the sphere baffle plate is apart from the about 15-20 of spout centimetre, and the uniform flow pressuring plate is apart from 5 centimetres of the limit section galvanic couple moons);
11-combustion of hydrogen flame; 12-hydrogen rifle; 13-furnace crown; The joint portion of 14-furnace crown and boiler tube mouth;
15-spring; 16-fire door
Embodiment:
Uniform flow heat insulation and dissipation device of the present invention adopts quartz or carbofrax material to make, and is hemisphere face baffle plate one shunting reflecting surface towards an end of hydrogen flame; The other end is diameter circular slab one a uniform flow pressuring plate bigger, that be uniform-distribution with a plurality of circular holes; Have film trap on two supports of connection shunting reflecting surface and uniform flow pressuring plate, be used to place silicon chip.The shunting reflecting surface is seen Fig. 2 towards the hydrogen flame during use.The main effect of shunting reflecting surface is overfire air stream guiding furnace wall, adopts spherical structure that high temperature gas flow is evenly scattered, and avoids shunting the reflecting surface hot-spot and by scorification.In addition, sphere also can fall the scattering of part infra-red radiation.Place one group of silicon chip behind the shunting reflecting surface, form " barrier wall " that influence air motion; Thermal current can be because of being subjected to retraining suddenly to produce the vortex disturbance through out-of-date, and the strong more heat release of disturbance is just strong more.Because than higher, the radiation of hydrogen flame is absorbed and is converted to heat silicon chip herein, carries out heat exchange by air-flow to ir-absorbance; Therefore, this group silicon chip has double action.Uniform flow pressuring plate after the silicon chip group has three effects, and the one, reduce the circulation area of air-flow, strengthen local pressure, improving heat exchange efficiency, and prolong the heat-exchange time of air-flow; The 2nd, make the still overheated air-flow of part scatter and move along furnace wall, causing the reaction of oxidation sole section galvanic couple, control limit end heating power carries out " compensation " in real time to the heat of overfire air stream; The 3rd, equally distributed circular hole can make air-flow enter the flat-temperature zone more equably on the plate.The effect of uniform flow heat insulation and dissipation device is summarized as follows: the overfire air stream guiding furnace wall that (1) produces the hydrogen flame, and in addition disturbance make its abundant heat release; (2) cause of the reaction of control galvanic couple in limit, by the unnecessary heat of realtime power adjustment " compensation " to thermal current; (3) radiation is reflected and is absorbed to the hydrogen flame.
The effect of semi-sealing tube structure is the area of giving vent to anger that reduces fire door, and the boiler tube internal pressure is increased, and reduces the speed that hydrogen sprays into boiler tube, allows overheated air-flow increase in the limit of the boiler tube section time of arrheaing, and improves the heat exchange amount.The semi-sealing tube structure is on the basis of former oxidation furnace system, and the enterprising dog hole of furnace crown is sealed; On fire door, add a spring, when fire door is closed furnace crown is withstood the slit that makes between boiler tube and furnace crown and reduce to minimum, reach the obstruction gas flow, improve the effect of boiler tube internal pressure.
The present invention is adapted at carrying out in 90～180 millimeters oxidation furnaces of boiler tube diameter the synthetic oxidation of internal combustion type hydrogen-oxygen.Below be to be when in 140 millimeters the oxidation furnace 150 silicon chips being carried out oxidation that thickness is respectively 80 nanometers and 800 nanometers, to adopt before and after the method for the present invention five point measurement results of oxide thickness at the boiler tube diameter.(No. 3 positions are by fire door, and No. 148 positions are by the hydrogen flame end)
| Oxidizing temperature (℃) | Sampling silicon chip position | Oxide thickness (nm) before using | The uniformity (%) | Use rear oxidation thickness (nm) | The uniformity (%) | ||||||||
| On | By | Down | A left side | Right | On | In | Down | A left side | Right | ||||
| ? ? ??900 | ????3 | ??68 | ??67 | ??67 | ??68 | ??68 | ????+ ? ???18.0 ? ??-10.6 | ??78 | ??79 | ??79 | ??78 | ??78 | ? ??+1.8 ? ??-1.8 |
| ????75 | ??75 | ??76 | ??75 | ??76 | ??76 | ??79 | ??81 | ??80 | ??80 | ??80 | |||
| ????148 | ??87 | ??89 | ??89 | ??90 | ??89 | ??81 | ??81 | ??81 | ??82 | ??81 | |||
| ? ? ??1000 | ????3 | ??657 | ??652 | ??649 | ??655 | ??658 | ????+ ? ???15.9 ? ??-10.0 | ??786 | ??788 | ??794 | ??779 | ??784 | ? ??+2.2 ? ??-2.3 |
| ????75 | ??728 | ??725 | ??723 | ??729 | ??727 | ??804 | ??808 | ??807 | ??808 | ??801 | |||
| ????148 | ??841 | ??839 | ??840 | ??845 | ??843 | ??824 | ??820 | ??823 | ??827 | ??819 | |||
Following table is the uniform flow heat insulation and dissipation apparatus structure size that is applicable to the different-diameter boiler tube
| Boiler tube diameter (millimeter) | Uniform flow pressuring plate diameter (millimeter) | Silicon chip diameter (millimeter) | Sphere baffle plate diameter (millimeter) | Perforate circular hole number on the uniform flow pressuring plate | Hydrogen flowing quantity (rise/minute) | Oxygen flow (rise/minute) | Link between shunting reflecting surface and uniform flow pressuring plate |
| ??90 | ????80 | ??60 | ??75 | ????7 | ????5 | ????3.5 | ????12 |
| ??140 | ????120 | ??100 | ??110 | ????7 | ????7 | ????5 | ????12 |
| ??180 | ????150 | ??105 | ??125 | ????7 | ????9 | ????7 | ????14 |
Claims (6)
1, a kind of method that improves the thermal oxide uniformity, its step comprises
1) from oxidation furnace boiler tube air inlet input hydrogen flame and oxygen;
2) said flow is led furnace wall is fully dispelled the heat it;
3) oxidation sole section galvanic couple induction overfire air stream is by changing the heat that limit section heating power balance air-flow is brought into;
4) stop and absorb the infra-red radiation that the hydrogen flame sends;
5) improve the interior pressure of boiler tube, reduce the speed that hydrogen sprays into boiler tube;
6) finish thermal oxide in the flat-temperature zone of boiler tube.
2, the method for the raising thermal oxide uniformity as claimed in claim 1 is characterized in that by the shunting reflecting surface in the boiler tube with the air-flow furnace wall that leads, the shunting reflecting surface is the hemisphere face structure; Behind the shunting reflecting surface, one group of silicon chip is set, makes air-flow produce disturbance; The uniform flow pressuring plate that the band passage is set behind silicon chip reduces the airflow area; Simultaneously the furnace crown of oxidation furnace is advanced the dog hole sealing, on fire door, add spring, close at fire door and withstand furnace crown to reduce the slit between boiler tube and the furnace crown when carrying out oxidation.
3, the method for the raising thermal oxide uniformity as claimed in claim 2 is characterized in that described shunting pressuring plate is a circular slab, evenly offers passage on the plate face; The diameter of shunting pressuring plate is greater than the spherical radius of described shunting reflecting surface; Shunting reflecting surface, uniform flow pressuring plate and link adopt quartz or carbofrax material to make.
4,, it is characterized in that described boiler tube diameter is the 90-180 millimeter as the method for the claim 2 or the 3 described raising thermal oxide uniformitys; Uniform flow pressuring plate diameter 80-150 millimeter; Shunting reflecting surface spherical diameter 75-125 millimeter; The silicon chip group silicon chip diameter 60-105 millimeter of establishing on the link; Hydrogen flowing quantity be the 5-9 liter/minute; Oxygen flow be the 3.5-7 liter/minute.
5, a kind of oxidation furnace system that improves the thermal oxide uniformity comprises oxidation furnace, it is characterized in that the furnace crown of oxidation furnace advances the dog hole sealing, establishes spring on the fire door, and spring withstands furnace crown when fire door is closed; Uniform flow heat insulation and dissipation device is set in the oxidation furnace, and uniform flow heat insulation and dissipation device comprises the shunting reflecting surface, the uniform flow pressuring plate, and shunting reflecting surface and uniform flow pressuring plate are connected to the link two ends, and the shunting reflecting surface is the hemisphere face structure; Have passage on the shunting pressuring plate; Have film trap on the link, place silicon chip.
6, the oxidation furnace system of the raising thermal oxide uniformity as claimed in claim 5, it is characterized in that shunting pressuring plate is circular slab, evenly offers passage on the plate face; The diameter of shunting pressuring plate is greater than the spherical radius of described shunting reflecting surface; Shunting reflecting surface, uniform flow pressuring plate and link adopt quartz or carbofrax material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03148087 CN1216408C (en) | 2003-06-30 | 2003-06-30 | Method for increasing thermal oxidation uniformity and oxidation oven system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03148087 CN1216408C (en) | 2003-06-30 | 2003-06-30 | Method for increasing thermal oxidation uniformity and oxidation oven system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1470800A true CN1470800A (en) | 2004-01-28 |
| CN1216408C CN1216408C (en) | 2005-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03148087 Expired - Fee Related CN1216408C (en) | 2003-06-30 | 2003-06-30 | Method for increasing thermal oxidation uniformity and oxidation oven system |
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| Country | Link |
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| CN (1) | CN1216408C (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101307987B (en) * | 2007-05-18 | 2010-05-26 | 中南大学 | Pressure charging air-float type oxidation oven |
| CN103871927A (en) * | 2012-12-10 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Structure of vertical diffusion oxidation furnace quartz process pipe |
| WO2019233063A1 (en) * | 2018-06-08 | 2019-12-12 | 北京北方华创微电子装备有限公司 | Oxidizing furnace |
-
2003
- 2003-06-30 CN CN 03148087 patent/CN1216408C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101307987B (en) * | 2007-05-18 | 2010-05-26 | 中南大学 | Pressure charging air-float type oxidation oven |
| CN103871927A (en) * | 2012-12-10 | 2014-06-18 | 上海华虹宏力半导体制造有限公司 | Structure of vertical diffusion oxidation furnace quartz process pipe |
| WO2019233063A1 (en) * | 2018-06-08 | 2019-12-12 | 北京北方华创微电子装备有限公司 | Oxidizing furnace |
| CN110579105A (en) * | 2018-06-08 | 2019-12-17 | 北京北方华创微电子装备有限公司 | Oxidation furnace |
| TWI727233B (en) * | 2018-06-08 | 2021-05-11 | 大陸商北京北方華創微電子裝備有限公司 | Oxidation furnace |
| CN110579105B (en) * | 2018-06-08 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Oxidation furnace |
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| Publication number | Publication date |
|---|---|
| CN1216408C (en) | 2005-08-24 |
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Granted publication date: 20050824 |