CN1466175A - EFT structure with elongation strain channel layer and mfg. method thereof - Google Patents
EFT structure with elongation strain channel layer and mfg. method thereof Download PDFInfo
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- CN1466175A CN1466175A CNA021403295A CN02140329A CN1466175A CN 1466175 A CN1466175 A CN 1466175A CN A021403295 A CNA021403295 A CN A021403295A CN 02140329 A CN02140329 A CN 02140329A CN 1466175 A CN1466175 A CN 1466175A
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- silicon
- tension strain
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Abstract
This invention relates to a method for processing fieldstors with stretch strain channel layers which is to lay a stretch-strain channel layer on a monocrystal silicon base, in which, the channel lay is formed by leading-in elements with atomic size smaller than that of silicon to the monocrystal silicon layer to replace the silicon atom place in silicon lattice then a grate insulation layer is formed on the channel layer and a grate electrode on the grate insulation layer and then a source/drain is formed on the both sides of the electrode.
Description
Technical field
The present invention relates to a kind of field-effect transistor (field effect transistor, manufacture method FET), particularly a kind of manufacture method of field-effect transistor of the channel layer (tensile-strained channellayer) with tension strain.
Background technology
Along with the downsizing of grid assembly size, make metal-oxide half field effect transistor (MOSFET) assembly can be under low operating voltage, having tend to act electric current and usefulness at a high speed of height is suitable difficulty.Therefore, many people are in the method for making great efforts to seek to improve the usefulness of mosfet device.
The band structure modification of utilizing stress to cause increases the mobility of carrier, to increase the electric current of tending to act of field-effect transistor, can improve the usefulness of fet devices, and this kind method has been applied in the various assemblies.The silicon channel of these assemblies is in the situation of biaxial tension strain.
Traditionally, utilize building crystal to grow silicon channel layer in lax (relaxed) SiGe (SiGe) layer or substrate, with the silicon layer of preparation tension strain.Yet, before the silicon channel layer of growth tension strain, need usually to go up the Si that the growth lattice is out of shape gradually in silica-based
1-xGe
xLayer, wherein the ratio x of germanium increases to 0.2 gradually from 0, with as resilient coating, more then in Si
1-xGe
xThe lax SiGe layer of growth one deck on the resilient coating.This kind method has a lot of shortcomings, and the different not Si of ear ratio grow up
1-xGe
xThe quite difficult control of the manufacturing process of layer, quite time-consuming, and cost improves relatively.And when the not ear ratio of Ge will increase, the brilliant Si that builds
1-xGe
xThe gross thickness of layer can with increase, thereby produce many penetrability difference row (threadingdislocation).
Therefore, the someone proposes carbon atom is incorporated in the germanium-silicon layer, reduces the lattice constant of SiGe to utilize carbon atom, makes the lattice constant of SiGe more near silicon, reduce strain by this, and allow the thicker germanium-silicon layer of growing up and the diffusion that reduces boron, as United States Patent (USP) 6,190,975B1.But this kind method has more increased the manufacturing process degree of difficulty of silicon germanium buffer.
Summary of the invention
The invention provides the field-effect transistor that a kind of simpler method forms the channel with tension strain.
The invention provides a kind of manufacture method of field-effect transistor of the channel with tension strain, this method provides a monocrystal silicon substrate, on monocrystal silicon substrate, build the channel layer of a brilliant tension strain afterwards, wherein the channel layer of tension strain imports in the monocrystalline silicon layer by the element that atomic size is little than silicon, form with the position that replaces silicon atom in the silicon crystal lattice, promptly the channel layer of tension strain is made of silicon and the atomic size both elements little than silicon.Then, on the channel layer of tension strain, form a gate insulator, and on gate insulator, form a gate electrode, form source/drain afterwards in the gate electrode both sides.
The invention provides a kind of manufacture method of field-effect transistor, its method is as follows: a brilliant Si of heap of stone on monocrystal silicon substrate
1-yC
yLayer is afterwards in Si
1-yC
yForm a gate insulator on the layer, on gate insulator, form a gate electrode, and in the Si of gate electrode both sides
1-yC
yForm source in layer and the monocrystal silicon substrate.
The present invention also provides a kind of field effect transistor structure with channel layer of tension strain, is applicable to a monocrystal silicon substrate, comprising: the Si of a tension strain
1-yC
yChannel layer is positioned on the active region of this monocrystal silicon substrate; One gate insulator is positioned at the Si of this tension strain
1-yC
yOn the channel layer; One gate electrode is positioned on this gate insulator; And source, be positioned at this gate electrode both sides.
According to one embodiment of the invention, the field effect transistor structure of above-mentioned channel layer with tension strain, wherein gate insulator can be silicon oxide layer, moreover, at the Si of silicon oxide layer and tension strain
1-yC
yAlso can comprise a silicon layer between the channel layer.In addition, the field effect transistor structure of the above-mentioned channel layer with tension strain also comprises a metal silicide, is arranged in the Si of source/drain tension strain
1-yC
yOn the channel layer.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A to Fig. 1 C represents to have according to a preferred embodiment of the present invention a kind of the system flow process of field-effect transistor of the channel layer of tension strain.
Fig. 2 A to Fig. 2 B represents a kind of formation method of gate insulator of field-effect transistor of the channel layer with tension strain.
Fig. 3 represents a kind of formation method of metal silicide layer of field-effect transistor of the channel layer with tension strain.
Fig. 4 represents that another kind has the formation method of metal silicide layer of field-effect transistor of the channel layer of tension strain.
[symbol description]
Monocrystal silicon substrate: 10 silicon layers: 20,20a, 32
Si
1-yC
yLayer: 12 clearance walls: 22
Fleet plough groove isolation structure: 14 metal silicide layers: 30
Gate insulator (or silicon oxide layer): 16 source electrodes: S
Gate electrode: 18 drain electrode: D
Embodiment
The invention provides a kind of field effect transistor structure, shown in Fig. 1 C with channel layer of tension strain.It comprises the Si of a tension strain
1-yC
yChannel layer 12 is positioned on the active region of monocrystal silicon substrate 10; One gate insulator 16 is positioned at the Si of tension strain
1-yC
yOn the channel layer 12; One gate electrode 18 is positioned on the gate insulator 16; And one source pole S/ drain D, be positioned at gate electrode 18 both sides.
In the field effect transistor structure of the above-mentioned channel layer with tension strain, wherein gate insulator 16 can be silicon oxide layer, moreover, at the Si of silicon oxide layer and tension strain
1-yC
yAlso can comprise a silicon layer 20a (with reference to figure 2B) between the channel layer 12.In addition, the field effect transistor structure of the above-mentioned channel layer with tension strain also comprises a metal silicide 30, is arranged in the Si of source S/drain D tension strain
1-yC
yOn the channel layer 12.
The invention provides the field-effect transistor that a kind of simpler method forms the channel with tension strain.And in the present invention that atomic size is little than silicon element (for example carbon) imports in the monocrystalline silicon layer, to make the channel layer of tension strain.Below describe conjunction with figs. the manufacture method of field-effect transistor of the present invention in detail.
Please refer to Figure 1A, one monocrystal silicon substrate 10 is provided, wherein monocrystal silicon substrate 10 is with fleet plough groove isolation structure (shallow trench isolation, STI) 12 definition active regions, the present invention can be applicable to PMOS assembly, NMOS assembly and cmos component, be to illustrate in Fig. 1, so more demonstrate p-well (p-well) zone and n-well (n-well) zone in graphic with cmos component.Then, the channel layer of brilliant one deck tension strain of heap of stone, for example Si on this monocrystal silicon substrate 10
1-yC
yLayer 12.Si wherein
1-yC
yThe mole fraction y of the carbon in the layer 12 is less than 0.04, and promptly the doping content of carbon is less than 4%.
Because the present invention uses the atomic volume carbon littler than silicon to be doped in the silicon layer, therefore build brilliant Si
1-yC
yThe balance lattice constant of layer 12 is less than monocrystalline silicon.Work as Si
1-yC
yLayer 12 is of heap of stone brilliant when monocrystal silicon substrate 10 surfaces, Si
1-yC
yThe lattice and the monocrystalline silicon lattice of layer 12 are compared, and can present the situation of twin shaft tension force (biaxial tension) (being the horizontal stretch vertical compression).At Si
1-yC
yThe mole fraction y of the carbon of layer in 12 is less than under 0.02 the situation, Si
1-yC
yLattice misfit (lattice mismatch) ratio between layer 12 and the monocrystalline silicon is about 1%.Compare with existing SiGe, if the lattice of existing SiGe will have identical lattice misfit situation (promptly lattice misfit ratio between the two is about 1%), the ratio that then is doped in the Ge among the Si will be up to 25%.
Above-mentioned Si
1-yC
y Layer 12 is in the situation of biaxial tension strain, so Si
1-yC
yThe thickness of layer 12 need be controlled the critical value less than its spontaneous strain relaxation (spontaneous strain relaxation).With Si
0.98C
0.02Be example, the critical thickness of its spontaneous strain relaxation is about 10nm.
In addition, (shallow trench isolation STI) 14 can build brilliant Si on monocrystal silicon substrate 10 to be used to define the fleet plough groove isolation structure of active region
1-yC
yBefore the layer 12, carry out shallow trench isolation from manufacturing process in monocrystal silicon substrate 10, to form, Si afterwards
1-yC
yLayer 12 utilizes selectivity brilliant method of heap of stone to be formed at the active region of monocrystal silicon substrate 10.Perhaps, can select brilliant Si of heap of stone on monocrystal silicon substrate 10
1-yC
yAfter the layer 12, in comprising Si
1-yC
yForm fleet plough groove isolation structure 14 in the monocrystal silicon substrate 10 of layer 12, in the case, Si
1-yC
yLayer 12 can utilize the high vacuum chemical vapour deposition process, and (ultra-high-vacuum chemicalvapor deposition UHVCVD) forms.
Then, please refer to 1B figure, in Si
1-yC
y Form gate insulator 16 on the layer 12.Wherein gate insulator 16 for example is a silicon oxide layer, its formation method have following three kinds available.
The formation method of first kind of gate insulator 16 is to utilize chemical vapour deposition technique, in Si
1-yC
ySilicon oxide layer deposited, silicon nitride layer, hafnium oxide layer, zirconia layer etc. on the layer 12.
The formation method of second kind of gate insulator 16 is to carry out oxidation manufacturing process, makes Si
1-yC
y Layer 12 surface oxidation and form silicon oxide layer (16), the method can be with reference to K.Pressel et al., " Oxidation of Si
(1-y)C
(y)(0＜y＜0.02) strained layers grown on Si (001) ", J.Vac.Sci.Tech.B, vol.16, no.3, pp.1757 ~ 1761, May/Jun.1998.Si for patina
1-yC
yLayer 12, oxidizing temperature can not be too high, need be lower than 800 ℃, to avoid the loss of carbon atom.
The formation method of the third gate insulator 16 is in active region Si
1-yC
yThe layer silicon layer 20 of optionally growing up on 12 shown in Fig. 2 A, afterwards with these silicon layer 20 oxidations, makes the top layer of silicon layer 20 transfer silicon oxide layer (16) to, and remaining silicon layer then is denoted as 20a, shown in Fig. 2 B.The thickness of the silicon layer 20 of being grown up is decided by the thickness of its last remaining thickness and thermal oxidation rear oxidation silicon layer (16).Usually, after step of thermal oxidation, silicon oxide layer (16) if thickness t
Ox, then the thickness of silicon layer 20 can consume about 0.46t
OxSuppose that wish that the silicon oxide layer (16) that step of thermal oxidation forms is 10 dusts (), the predetermined thickness of silicon layer 20a is 5 dusts, then needs the silicon layer 20 of growth 9.6 dusts before carrying out step of thermal oxidation.Preferable situation is that the thickness of the silicon layer 20a after the thermal oxidation is about 2 ~ 6 atom level layers (atomic layers), promptly about 5 ~ 15 Izod right sides.This silicon layer 20 provides a good interface quality, and can avoid silicon oxide layer (16) directly to grow up at Si
1-yC
y Layer 12 surface, the concentration of carbon that can guarantee silicon layer 20a-silicon oxide layer (16) interface is enough low and make silicon oxide layer (16) that the quality of getting well be arranged.The more important thing is that the existence of this silicon layer 20a can guarantee that charge density inversion layer position is at Si
1-yC
yIn the layer 12, and make most movable carrier (for example electronics) be positioned at Si
1-yC
yIn the layer 12.Therefore, can promote transistorized usefulness again.
Then please refer to Fig. 1 C, on gate insulator 16, form gate electrode 18.And carry out n type and p type ion doping respectively at the p-well area and the n-well area of gate electrode 18 both sides, and form clearance wall 22 in the sidewall of gate electrode 18, and carry out Rapid Thermal tempering manufacturing process (RTA) and do not causing Si
1-yC
yActivation n type and p type ion doping under the situation of layer 12 strain relaxation are to form source S/drain D, to define PMOS assembly and NMOS assembly respectively at p-well area and n-well area.
Form metal silicide (silicide) layer 30 in addition, and on source S/drain D surface.Its formation method have following three kinds available.
The formation method of first kind of metal silicide layer 30 is used traditional method, with the Si in source S/drain D
1-yC
yThe metal silication reaction is carried out on layer 12 top layer.Meaning promptly deposits layer of metal, and for example titanium then utilizes high temperature, makes titanium and Si
1-yC
yThe metal silication reaction is carried out on layer 12 top layer, utilizes wet etching to remove unreacted titanium at last.
The formation method of second kind of metal silicide layer 30 before carrying out the metal silication reaction, removes the Si that exposes
1-yC
yLayer 12 makes in the metal silicide layer 30 of formation not contain any carbon atom, as shown in Figure 3.
The formation method of the third metal silicide layer 30, the Si in source S/drain D
1-yC
yThe surface selectivity of layer 12 brilliant one deck silicon layer 32 of heap of stone occurs in the silicon layer 32 the metal silication reaction, and can not occur in Si
1-yC
y Layer 12, as shown in Figure 4.
Then carry out follow-up semiconductor fabrication process.
Though the present invention is open with preferred embodiment, so it is not in order to limiting scope of the present invention, any those of ordinary skill in the art, and without departing from the spirit and scope of the present invention, the variation of some equivalences should belong to protection scope of the present invention.
Claims (10)
1. the manufacture method of the field-effect transistor of the channel layer with tension strain is characterized in that, comprising:
One monocrystal silicon substrate is provided;
The channel layer of a brilliant tension strain of heap of stone on this monocrystal silicon substrate, wherein the channel layer of this tension strain imports in the monocrystalline silicon layer by the element that atomic size is little than silicon, form with the position that replaces silicon atom in the silicon crystal lattice, promptly the channel layer of tension strain is made of silicon and the atomic size both elements little than silicon;
On the channel layer of this tension strain, form a gate insulator;
On this gate insulator, form a gate electrode; And
Form source in these gate electrode both sides.
2. the manufacture method of the field-effect transistor of the channel layer with tension strain as claimed in claim 1 is characterized in that the channel layer of this tension strain is Si
1-yC
yLayer, wherein y is less than 0.04.
3. the manufacture method of the field-effect transistor of the channel layer with tension strain as claimed in claim 2 is characterized in that this Si
1-yC
yThe constituent of layer is Si
0.98C
0.02, this Si
0.98C
0.02The critical thickness of layer is 10nm.
4. the manufacture method of the field-effect transistor of the channel layer with tension strain as claimed in claim 1, wherein the formation method of this gate insulator comprises: utilize chemical vapour deposition technique, deposition one deck is selected in the group that free oxidation silicon, silicon nitride, hafnium oxide and zirconia form on the channel layer of this tension strain.
5. the manufacture method of the field-effect transistor of the channel layer with tension strain as claimed in claim 1, it is characterized in that, this gate insulator is an one silica layer, the formation method of this gate insulator comprises: carry out oxidation manufacturing process, make the channel layer surface oxidation of this tension strain and form this silicon oxide layer.
6. the manufacture method of the field-effect transistor of the channel layer with tension strain as claimed in claim 1 is characterized in that this gate insulator is an one silica layer, and the formation method of this gate insulator comprises:
On the channel layer of this tension strain, form a silicon layer; And
This silicon layer of oxidation makes the top layer of this silicon layer transfer this silicon oxide layer to.
7. the field effect transistor structure with channel layer of tension strain is applicable to a monocrystal silicon substrate, it is characterized in that, comprising:
The Si of one tension strain
1-yC
yChannel layer is positioned on the active region of this monocrystal silicon substrate;
One gate insulator is positioned at the Si of this tension strain
1-yC
yOn the channel layer;
One gate electrode is positioned on this gate insulator; And
Source is positioned at this gate electrode both sides.
8. the field effect transistor structure with channel layer of tension strain as claimed in claim 40 is characterized in that, the Si of this tension strain
1-yC
yY is less than 0.04 in the channel layer.
9. the field effect transistor structure with channel layer of tension strain as claimed in claim 41 is characterized in that, the Si of this tension strain
1-yC
yThe constituent of channel layer is Si
0.98C
0.02, this Si
0.98C
0.02The critical thickness of layer is 1nm.
10. the field effect transistor structure with channel layer of tension strain as claimed in claim 40 is characterized in that, this gate insulator is an one silica layer, the Si of this silicon oxide layer and this tension strain
1-yC
yAlso comprise a silicon layer between the channel layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02140329 CN1284216C (en) | 2002-07-01 | 2002-07-01 | EFT structure with elongation strain channel layer and mfg. method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02140329 CN1284216C (en) | 2002-07-01 | 2002-07-01 | EFT structure with elongation strain channel layer and mfg. method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1466175A true CN1466175A (en) | 2004-01-07 |
| CN1284216C CN1284216C (en) | 2006-11-08 |
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|---|---|---|---|
| CN 02140329 Expired - Lifetime CN1284216C (en) | 2002-07-01 | 2002-07-01 | EFT structure with elongation strain channel layer and mfg. method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312208B (en) * | 2007-05-23 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | NMOS transistor and method for forming same |
| CN101189730B (en) * | 2004-03-31 | 2011-04-20 | 英特尔公司 | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
-
2002
- 2002-07-01 CN CN 02140329 patent/CN1284216C/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101189730B (en) * | 2004-03-31 | 2011-04-20 | 英特尔公司 | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
| CN101312208B (en) * | 2007-05-23 | 2010-09-29 | 中芯国际集成电路制造(上海)有限公司 | NMOS transistor and method for forming same |
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| Publication number | Publication date |
|---|---|
| CN1284216C (en) | 2006-11-08 |
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